Semiconductor Leading Edge Technologies, Inc.
|Semiconductor Leading Edge Technologies, Inc. Patent applications|
|Patent application number||Title||Published|
|20080274605||METHOD OF MANUFACTURING SILICON NITRIDE FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - A method of manufacturing a silicon nitride film that forms a silicon nitride film on a surface of a substrate comprises sequentially repeating first through third steps. The first step includes feeding a first gas containing silicon and nitrogen to the surface of the substrate. The second step includes feeding a second gas containing nitrogen to the surface of the substrate. The third step includes feeding a third gas containing hydrogen to the surface of the substrate.||11-06-2008|
Patent applications by Semiconductor Leading Edge Technologies, Inc.