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Semiconductor Leading Edge Technologies, Inc.
Tsukuba-shi, JP
| Semiconductor Leading Edge Technologies, Inc. Patent applications | ||
| Patent application number | Title | Published |
|---|---|---|
| 20080274605 | METHOD OF MANUFACTURING SILICON NITRIDE FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - A method of manufacturing a silicon nitride film that forms a silicon nitride film on a surface of a substrate comprises sequentially repeating first through third steps. The first step includes feeding a first gas containing silicon and nitrogen to the surface of the substrate. The second step includes feeding a second gas containing nitrogen to the surface of the substrate. The third step includes feeding a third gas containing hydrogen to the surface of the substrate. | 11-06-2008 |