| 20090140231 | Semiconductor device and method of manufacturing the same - It is an object of the present invention to provide a technique in which a high-performance and highly reliable semiconductor device can be manufactured at low cost with high yield. A memory device according to the present invention has a first conductive layer including a plurality of insulators, an organic compound layer over the first conductive layer including the insulators, and a second conductive layer over the organic compound layer. | 06-04-2009 |
