| SEMICONDUCTOR ENERGY LABORATORY CO., LTD. Patent applications |
| Patent application number | Title | Published |
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| 20120034766 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film. | 02-09-2012 |
| 20120034765 | MANUFACTURING METHOD OF MICROCRYSTALLINE SILICON FILM AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR - An object is to provide a manufacturing method of a microcrystalline silicon film with improved adhesion between an insulating film and the microcrystalline silicon film. The microcrystalline silicon film is formed in the following manner. Over an insulating film, a microcrystalline silicon grain having a height that allows the microcrystalline silicon grain to be completely oxidized by later plasma oxidation (e.g., a height greater than 0 nm and less than or equal to 5 nm), or a microcrystalline silicon film or an amorphous silicon film having a thickness that allows the microcrystalline silicon film or the amorphous silicon film to be completely oxidized by later plasma oxidation (e.g., a thickness greater than 0 nm and less than or equal to 5 nm) is formed. Plasma treatment in an atmosphere including oxygen or plasma oxidation is performed on the microcrystalline silicon grain, the microcrystalline silicon film, or the amorphous silicon film, so that a silicon oxide grain or a silicon oxide film is formed over the insulating film. A microcrystalline silicon film is formed over the silicon oxide grain or the silicon oxide film. | 02-09-2012 |
| 20120034758 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A cap film which can prevent diffusion of hydrogen from the embrittled region and supply hydrogen to a region between the embrittled region and the surface of the semiconductor substrate is formed over the semiconductor substrate, and the semiconductor layer is transferred from the semiconductor substrate to the base substrate. In particular, the amount of hydrogen contained in the cap film formed over the semiconductor substrate is preferably greater than or equal to the irradiation amount of hydrogen ions. | 02-09-2012 |
| 20120034744 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A highly responsive semiconductor device in which the subthreshold swing (S value) is small and reduction in on-current is suppressed is manufactured. A semiconductor layer in which a thickness of a source region or a drain region is larger than that of a channel formation region is formed. A semiconductor layer having a concavo-convex shape which is included in the semiconductor device is formed by the steps of forming a first semiconductor layer over a substrate; forming a first insulating layer and a conductive layer over the first semiconductor layer; forming a second insulating layer over a side surface of the conductive layer; forming a second semiconductor layer over the first insulating layer, the conductive layer and the second insulating layer; etching the second semiconductor layer using a resist formed partially as a mask; and performing heat treatment to the first semiconductor layer and the second semiconductor layer. | 02-09-2012 |
| 20120034743 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device in which a defect is suppressed and miniaturization is achieved is provided. An insulating film is formed over a flat surface; a first mask is formed over the insulating film; a second mask is formed by performing a slimming process on the first mask; an insulating layer is formed by performing an etching process on the insulating film using the second mask; an oxide semiconductor layer covering the insulating layer is formed; a conductive film covering the oxide semiconductor layer is formed; a surface of the conductive film is flattened by performing a polishing process on the conductive film; an etching process is performed on the conductive film, so that a conductive layer is formed and a surface of the conductive layer is lower than a surface of an uppermost part of the oxide semiconductor layer; a gate insulating film in contact with the conductive layer and the oxide semiconductor layer is formed; and a gate electrode is formed in a region which is over the gate insulating film and overlaps with the insulating layer. | 02-09-2012 |
| 20120033510 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device with a novel structure, which can hold stored data even when power is not supplied and which has an unlimited number of write cycles. The semiconductor device is formed using a memory cell including a wide band gap semiconductor such as an oxide semiconductor. The semiconductor device includes a potential change circuit having a function of outputting a potential lower than a reference potential for reading data from the memory cell. When the wide band gap semiconductor which allows a sufficient reduction in of state current of a transistor included in the memory cell is used, a semiconductor device which can hold data for a long period can be provided. | 02-09-2012 |
| 20120033505 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE - A semiconductor device with a novel structure is provided, in which the operation voltage is reduced or the storage capacity is increased by reducing variation in the threshold voltages of memory cells after writing. The semiconductor device includes a plurality of memory cells each including a transistor including an oxide semiconductor and a transistor including a material other than an oxide semiconductor, a driver circuit that drives the plurality of memory cells, and a potential generating circuit that generates a plurality of potentials supplied to the driver circuit. The driver circuit includes a data buffer, a writing circuit that writes one potential of the plurality of potentials into each of the plurality of memory cells as data, a reading circuit that reads the data written into the memory cells, and a verifying circuit that verifies whether the read data agrees with data held in the data buffer or not. | 02-09-2012 |
| 20120033488 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - A semiconductor device including a memory cell formed using a wide bandgap semiconductor, for example, an oxide semiconductor is provided. The semiconductor device includes a potential change circuit having a function of outputting a potential lower than a reference potential for reading data from the memory cell. With the use of the wide bandgap semiconductor, an off-state current of a transistor included in the memory cell can be sufficiently reduced, and the semiconductor device which can hold data for a long period can be provided. | 02-09-2012 |
| 20120033487 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - A semiconductor device including a nonvolatile memory cell in which a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor are included is provided. Data is written to the memory cell by turning on the writing transistor and applying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor, so that the predetermined amount of charge is held in the node. Further, when a p-channel transistor is used as the reading transistor, a reading potential is a positive potential. | 02-09-2012 |
| 20120033486 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied, and does not have a limitation on the number of writing operations. A semiconductor device includes a plurality of memory cells each including a transistor including a first semiconductor material, a transistor including a second semiconductor material that is different from the first semiconductor material, and a capacitor, and a potential switching circuit having a function of supplying a power supply potential to a source line in a writing period. Thus, power consumption of the semiconductor device can be sufficiently suppressed. | 02-09-2012 |
| 20120033485 | SEMICONDUCTOR DEVICE - In a semiconductor device which includes a bit line, m (m is a natural number of 3 or more) word lines, a source line, m signal lines, first to m-th memory cells, and a driver circuit, the memory cell includes a first transistor and a second transistor for storing electrical charge accumulated in a capacitor, and the second transistor includes a channel formed in an oxide semiconductor layer. In the semiconductor device, the driver circuit generates a signal to be output to a (j−1)th (j is a natural number of 3 or more) signal line with the use of a signal to be output to a j-th signal line. | 02-09-2012 |
| 20120033484 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - The semiconductor device is formed using a material which allows a sufficient reduction in off-state current of a transistor; for example, an oxide semiconductor material, which is a wide gap semiconductor, is used. When a semiconductor material which allows a sufficient reduction in off-state current of a transistor is used, the semiconductor device can hold data for a long period. In addition, the timing of potential change in a signal line is delayed relative to the timing of potential change in a write word line. This makes it possible to prevent a data writing error. | 02-09-2012 |
| 20120033483 | SEMICONDUCTOR DEVICE AND DRIVING METHOD OF SEMICONDUCTOR DEVICE - A memory cell includes a capacitor, a first transistor, and a second transistor whose off-state current is smaller than that of the first transistor. The first transistor has higher switching speed than the second transistor. The first transistor, the second transistor, and the capacitor are electrically connected in series. Accumulation of charge in the capacitor and release of charge from the capacitor are performed through the first transistor and the second transistor. In this manner, the power consumption of the semiconductor device can be reduced and data can be written and read at higher speed. | 02-09-2012 |
| 20120033476 | INVERTER CIRCUIT, POWER CONVERTER CIRCUIT, AND ELECTRIC VEHICLE - An object is to reduce, with the control circuit of the full-bridge inverter circuit, distortions in an output signal of the inverter circuit resulting from an error in control of the switching of the high-side transistors and low-side transistors included in the first half-bridge circuit and the second half-bridge circuit. The pulse width of a signal that controls ON/OFF of the high-side transistors and low-side transistors included in the first half-bridge circuit and the second half-bridge circuit is reduced, i.e., the duty cycle of the signal is reduced. This results in a reduction in short-circuit periods during which both the high-side transistor and the low-side transistor are on, thereby reducing distortions in a signal. | 02-09-2012 |
| 20120033151 | LIQUID CRYSTAL DISPLAY DEVICE AND DRIVING METHOD THEREOF - A reflective region where display is performed with reflection of incident light through a liquid crystal layer and a transmissive region where display is performed by transmission of light from a backlight are provided, and the reflective mode and the transmissive mode are switched. In the case of displaying a full-color image, a pixel portion includes at least a first region and a second region, a plurality of lights of different hues are sequentially supplied to the first region according to a first order, and a plurality of lights of different hues are also sequentially supplied to the second region according to a second order which is different from the first order. In the transmissive mode, the reflective region is made to display black, so that decrease in contrast due to reflection of external light at the reflective region is prevented. | 02-09-2012 |
| 20120033075 | DISPLAY DEVICE AND VEHICLE - A vehicle has a display device which widens the field of view (visible area) reflected by a side mirror or a back mirror mounted on the vehicle. To enable a driver driving the vehicle to confirm safety even when it is difficult for the driver to visually recognize some of objects surrounding the vehicle, a liquid crystal display device or an EL display device is provided in the side mirror (door mirror), the back mirror (room mirror) or in an interior portion of the vehicle. A camera is mounted on the vehicle and an image from the camera is displayed on the display device. Further, information read from a sensor (distance measuring sensor) having the function of measuring the distance to another vehicle, and a sensor (impact sensor) having the function of sensing an externally applied impact force larger than a predetermined value is displayed on the display device. | 02-09-2012 |
| 20120032996 | DRIVING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE - In the first range of a screen, an image signal is input to a plurality of pixels arranged in the first region, and next an image signal is input to a plurality of pixels arranged in the second region that is adjacent to one side of the first region, and light of the first color is delivered every time the input of the image signal is finished. Further, in the second range, an image signal is input to a plurality of pixels arranged in a fourth region; next, an image signal is input to a plurality of pixels arranged in a third region adjacent to the other side of the fourth region, and light of a second color is delivered every time the input of the image signal is finished. | 02-09-2012 |
| 20120032966 | SEMICONDUCTOR DEVICE - The present invention intends to realize a narrow frame of a system on panel. In addition to this, a system mounted on a panel is intended to make higher and more versatile in the functionality. In the invention, on a panel on which a pixel portion (including a liquid crystal element, a light-emitting element) and a driving circuit are formed, integrated circuits that have so far constituted an external circuit are laminated and formed. Specifically, of the pixel portion and the driving circuit on the panel, on a position that overlaps with the driving circuit, any one kind or a plurality of kinds of the integrated circuits is formed by laminating according to a transcription technique. | 02-09-2012 |
| 20120032943 | Semiconductor Device, and Display Device and Electronic Device Utilizing the Same - A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor | 02-09-2012 |
| 20120032942 | LIQUID CRYSTAL DISPLAY DEVICE AND DRIVING METHOD OF THE SAME - Provided is a liquid crystal display device having a pixel including a transistor and a liquid crystal element and a protection circuit electrically connected to one of a source and a drain of the transistor through a data line. The protection circuit includes a first terminal supplied with a first power supply potential and a second terminal supplied with a second power supply potential higher than the first power supply potential. In a moving image display mode, an image signal is input from the data line to the liquid crystal element through the transistor, and the first power supply potential is set at the first potential. In a still image display mode, supply of the image signal is stopped, and the first power supply potential is set at the second potential. The second potential is substantially the same as the minimum value of the image signal. | 02-09-2012 |
| 20120032785 | SEMICONDUCTOR DEVICE - A protection circuit is designed to operate when the level of a DC power supply potential which is generated in a rectifier circuit is equal to or greater than a predetermined level (a reference level), so as to decrease the level of the generated DC power supply potential. On the other hand, the protection circuit is designed not to operate when the DC power supply potential which is generated in the rectifier circuit is equal to or less than the predetermined level (the reference level), so as to use the generated DC power supply potential without change. A transistor of the protection circuit includes an oxide semiconductor layer, which enables a reduction in the off-state current of the transistor and a reduction in power consumption of the protection circuit. | 02-09-2012 |
| 20120032730 | SEMICONDUCTOR INTEGRATED DEVICE - To reduce power consumption of a semiconductor integrated circuit and to reduce delay of the operation in the semiconductor integrated circuit, a plurality of sequential circuits included in a storage circuit each include a transistor whose channel formation region is formed with an oxide semiconductor, and a capacitor whose one electrode is electrically connected to a node that is brought into a floating state when the transistor is turned off. By using an oxide semiconductor for the channel formation region of the transistor, the transistor with an extremely low off-state current (leakage current) can be realized. Thus, by turning off the transistor in a period during which power supply voltage is not supplied to the storage circuit, the potential in that period of the node to which one electrode of the capacitor is electrically connected can be kept constant or almost constant. Consequently, the above objects can be achieved. | 02-09-2012 |
| 20120032581 | PLASMA DISPLAY PANEL AND FIELD EMISSION DISPLAY - It is an object of the present invention to provide a PDP and an FED with excellent visibility and a high level of reliability that each have an antireflective function by which reflection of external light can be reduced. A plurality of adjacent pyramidal-shaped projections and an antireflective layer equipped with a covering film that covers the projections are provided. The reflection of light is prevented by the index of refraction of incident light from external being changed by a pyramid, which is a physical shape, projecting out toward an external side (atmosphere side) of a substrate that is to be used as a display screen as well as by the covering film used to cover the projections being formed of a material that has a higher index of refraction than the index of refraction of the pyramidal projection. | 02-09-2012 |
| 20120032304 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object of the present invention to manufacture a micromachine having a plurality of structural bodies with different functions and to shorten the time required for sacrifice layer etching in a process of manufacturing the micromachine. Another object of the present invention is to prevent a structural layer from being attached to a substrate after the sacrifice layer etching. In other words, an object of the present invention is to provide an inexpensive and high-value-added micromachine by improving throughput and yield. The sacrifice layer etching is conducted in multiple steps. In the multiple steps of the sacrifice layer etching, a part of the sacrifice layer that does not overlap with the structural layer is removed by the earlier sacrifice layer etching and a part of the sacrifice layer that is under the structural layer is removed by the later sacrifice layer etching. | 02-09-2012 |
| 20120032236 | SEMICONDUCTOR DEVICE - An object is to realize high performance and low power consumption in a semiconductor device having an SOI structure. In addition, another object is to provide a semiconductor device having a high performance semiconductor element which is more highly integrated. A semiconductor device is such that a plurality of n-channel field-effect transistors and p-channel field-effect transistors are stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. By controlling a distortion caused to a semiconductor layer due to an insulating film having a stress, a plane orientation of the semiconductor layer, and a crystal axis in a channel length direction, difference in mobility between the n-channel field-effect transistor and the p-channel field-effect transistor can be reduced, whereby current driving capabilities and response speeds of the n-channel field-effect transistor and the p-channel field-effect can be comparable. | 02-09-2012 |
| 20120032199 | Element Substrate and Light-Emitting Device - A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor. | 02-09-2012 |
| 20120032193 | SOLID-STATE IMAGE SENSING DEVICE AND SEMICONDUCTOR DISPLAY DEVICE - To provide a solid-state image sensing device or a semiconductor display device, which can easily obtain the positional data of an object without contact. Included are a plurality of first photosensors on which light with a first incident angle is incident from a first incident direction and a plurality of second photosensors on which light with a second incident angle is incident from a second incident direction. The first incident angle of light incident on one of the plurality of first photosensors is larger than that of light incident on one of the other first photosensors. The second incident angle of light incident on one of the plurality of second photosensors is larger than that of light incident on one of the other second photosensors. | 02-09-2012 |
| 20120032181 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - It is an object of the invention to provide a thin, lightweight, high performance, and low in cost semiconductor device and a display device by reducing an arrangement area required for a power supply wiring and a ground wiring of a functional circuit and decreasing a drop in power supply voltage and a rise in ground voltage. In the functional circuit of the semiconductor device and the display device, a power supply wiring and a ground wiring are formed in a comb-like arrangement, and the tips thereof are electrically connected with a first wiring, a second wiring, and a contact between the first wiring and the second wiring, thereby forming in a grid-like arrangement. The drop in power supply voltage and the rise in ground voltage can be decreased and the arrangement area can be decreased in the grid-like arrangement. | 02-09-2012 |
| 20120032172 | SEMICONDUCTOR DEVICE - A semiconductor device including the following components and a manufacturing method of the semiconductor device are provided. The semiconductor device includes a substrate; an oxide semiconductor layer over the substrate; a source electrode and a drain electrode whose end portion has a taper angle and whose upper end portion has a curved surface, the source electrode and the drain electrode being electrically connected to the oxide semiconductor layer; a gate insulating layer being in contact with a part of the oxide semiconductor layer and covering the oxide semiconductor layer, the source electrode, and the drain electrode; and a gate electrode overlapping with the oxide semiconductor layer and being over the gate insulating layer. | 02-09-2012 |
| 20120032171 | SEMICONDUCTOR DEVICE - An object is to miniaturize a semiconductor device. Another object is to reduce the area of a driver circuit of a semiconductor device including a memory cell. The semiconductor device includes an element formation layer provided with at least a first semiconductor element, a first wiring provided over the element formation layer, an interlayer film provided over the first wiring, and a second wiring overlapping with the first wiring with the interlayer film provided therebetween. The first wiring, the interlayer film, and the second wiring are included in a second semiconductor element. The first wiring and the second wiring are wirings to which the same potentials are supplied. | 02-09-2012 |
| 20120032164 | SEMICONDUCTOR DEVICE - In a semiconductor device which conducts multilevel writing operation and a driving method thereof, a signal line for controlling on/off of a writing transistor for conducting a writing operation on a memory cell using a transistor including an oxide semiconductor layer is disposed along a bit line, and a multilevel writing operation is conducted with use of, also in a writing operation, a voltage which is applied to a capacitor at a reading operation. Because an oxide semiconductor material that is a wide gap semiconductor capable of sufficiently reducing off-state current of a transistor is used, data can be held for a long period. | 02-09-2012 |
| 20120032163 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The electric characteristics of a semiconductor device including an oxide semiconductor change by irradiation with visible light or ultraviolet light. In view of the above problem, one object is to provide a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. Over an oxide insulating layer, a first oxide semiconductor layer is formed to a thickness greater than or equal to 1 nm and less than or equal to 10 nm and crystallized by heat treatment, so that a first crystalline oxide semiconductor layer is formed. A second crystalline oxide semiconductor layer with a greater thickness than the first crystalline oxide semiconductor layer is formed thereover. | 02-09-2012 |
| 20120032162 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device which can hold stored data even when not powered and which achieves high integration by reduction of the number of wirings. The semiconductor device is formed using a material which can sufficiently reduce the off-state current of a transistor, e.g., an oxide semiconductor material which is a wide bandgap semiconductor. When a semiconductor material which allows a sufficient reduction in the off-state current of a transistor is used, data can be held for a long period. One line serves as the word line for writing and the word line for reading and one line serves as the bit line for writing and the bit line for reading, whereby the number of wirings is reduced. Accordingly, the storage capacity per unit area is increased. | 02-09-2012 |
| 20120032161 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device which can hold stored data even when not powered and which achieves high integration by reduction of the number of wirings. The semiconductor device is formed using a material which can sufficiently reduce the off-state current of a transistor, e.g., an oxide semiconductor material which is a wide bandgap semiconductor. When a semiconductor material which allows a sufficient reduction in the off-state current of a transistor is used, data can be held for a long period. One line serves as the word line for writing and the word line for reading and one line serves as the bit line for writing and the bit line for reading, whereby the number of wirings is reduced. Further, by reducing the number of source lines, the storage capacity per unit area is increased. | 02-09-2012 |
| 20120032160 | ORGANIC FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE - It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced. | 02-09-2012 |
| 20120032159 | DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE - It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant, planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound. | 02-09-2012 |
| 20120028590 | SEMICONDUCTOR DEVICE - In a multi-core semiconductor device, a data bus between CPUs or the like consumes a larger amount of power. By provision of a plurality of CPUs which transmit data by a backscattering method of a wireless signal, a router circuit which mediates data transmission and reception between the CPUs or the like, and a thread control circuit which has a thread scheduling function, a semiconductor device which consumes less power and has high arithmetic performance can be provided at low cost. | 02-02-2012 |
| 20120028391 | METHOD OF FABRICATING DISPLAY DEVICE - To improve the use efficiency of materials and provide a technique of fabricating a display device by a simple process. The method includes the steps of providing a mask on a conductive layer, forming an insulating film over the conductive layer provided with the mask, removing the mask to form an insulating layer having an opening; and forming a conductive film in the opening so as to be in contact with the exposed conductive layer, whereby the conductive layer and the conductive film can be electrically connected through the insulating layer. The shape of the opening reflects the shape of the mask. A mask having a columnar shape (e.g., a prism, a cylinder, or a triangular prism), a needle shape, or the like can be used. | 02-02-2012 |
| 20120026787 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - A transistor includes first and second control gates, and a storage gate. The storage gate is made to be a conductor, supplied with a specific potential, and then made to be an insulator, thereby holding the potential. Data is written by making the storage gate a conductor, supplying a potential of data to be stored, and making the storage gate an insulator. Data is read by making the storage gate an insulator, supplying a potential to a read signal line connected to one of a source and a drain of the transistor, supplying a potential for reading data to the first control gate, and then detecting a potential of a bit line connected to the other of the source and the drain. | 02-02-2012 |
| 20120026774 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - An object is to provide a semiconductor device in which lower power consumption is realized by lowering voltage for data writing without increase in types of power supply potentials. Another object is to provide a semiconductor device in which threshold voltage drop of a selection transistor is suppressed without increase in types of power supply potentials for data writing. A diode-connected transistor is electrically connected in series with a word line electrically connected to a gate of an n-channel selection transistor. A capacitor is provided between the word line and a bit line electrically connected to one of a source and a drain of the selection transistor; alternatively, the capacitance between the bit line and the word line is used. In data writing, the timing of selecting the word line is earlier than the timing of selecting the bit line. | 02-02-2012 |
| 20120026163 | METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE - Data of display data signals input to a plurality of display circuits are alternately switched between an image data for the left eye and an image data for the right eye every a plurality of frame periods; the plurality of display circuits are divided into a plurality of groups each including the display circuits in at least one row, and in each group, pulses of display selection signals are sequentially input Z (Z is a natural number greater than or equal to 3) times to the display circuits in the respective rows; and data of the display data signal input during a K-th (K is a natural number greater than or equal to 2) frame period and data of the display data signal input during a (K−1)-th frame period are compared. As a result, a color image and a black image are selectively displayed. | 02-02-2012 |
| 20120025876 | Current Driving Circuit and Display Device Using The Current Driving Circuit - A current drive circuit which can improve a rate for signal writing and a driving rate of an element even when a signal current is small, and a display device using the current drive circuit are provided. The current drive circuit for supplying a signal current to a node of a driven circuit through a signal line includes a precharge function for supplying a precharge voltage to the node through the signal line and the precharge function includes a supply function for supplying the precharge voltage to the node and the signal line prior to supplying the signal current. | 02-02-2012 |
| 20120025757 | RADIO FIELD INTENSITY MEASUREMENT DEVICE, AND RADIO FIELD INTENSITY DETECTOR AND GAME CONSOLE USING THE SAME - The present invention provides a radio field intensity measurement device having a display portion with improved visibility, in the case of measuring a weak radiowave from a long distance. In the radio field intensity measurement device, a battery is provided as a power source for power supply and the battery is charged by a received radiowave. When a potential of a signal obtained from the received radiowave is higher than an output potential of the battery, the power is stored in the battery. On the other hand, when the potential of the signal obtained from the received radiowave is lower than the output potential of the battery, power produced by the battery is used as power to drive the radio field intensity measurement device. As an element to display the radio field intensity, a thermochromic element or an electrochromic element is used. | 02-02-2012 |
| 20120025631 | WIRELESS POWER FEEDING SYSTEM AND WIRELESS POWER FEEDING METHOD - An object is to provide a power feeding system and a power feeding method which are more convenient for a power feeding user at the power receiving end, without causing increases in complexity and size of devices. An object is to provide a power feeding system and a power feeding method which also allow a power feeding provider (a company) which feeds power (at the power transmitting end) to supply power without waste. A power feeding device which wirelessly supplies power to a power receiver detects the position and the resonant frequency of the power receiver by receiving a position and resonant frequency detection signal using a plurality of sub-carriers having different frequencies from the power receiver, and controls the frequency of a power signal to be transmitted to the power receiver on the basis of the information. An efficient power feeding service can be offered by transmitting a power signal to the power receiver at an optimum frequency for high power transmission efficiency. | 02-02-2012 |
| 20120025627 | WIRELESS POWER FEEDING SYSTEM AND WIRELESS POWER FEEDING METHOD - An object is to provide a power feeding system and a power feeding method which are more convenient for a power feeding user at the power receiving end. An object is to provide a power feeding system and a power feeding method which also allow a power feeding provider (a company) which feeds power (at the power transmitting end) to supply power without waste. A power feeding device which wirelessly supplies power to a power receiver detects the position and the resonant frequency of the power receiver to be supplied with power, and controls the frequency of a power signal to be transmitted to the power receiver on the basis of the information. | 02-02-2012 |
| 20120025611 | WIRELESS POWER FEEDING SYSTEM AND WIRELESS POWER FEEDING METHOD - A power feeding device which wirelessly supplies power to a power receiver receives a position and resonant frequency detection signal from the power receiver, detects the position and the resonant frequency of the power receiver, and controls the frequency of a power signal to be transmitted to the power receiver on the basis of the information. As the power signal for power transmission, two signals having different frequencies, which are generated using a mixer by mixing a base carrier (a first signal) with a conversion carrier (a second signal) generated on the basis of the resonant frequency, are used. | 02-02-2012 |
| 20120025284 | Semiconductor Device - A semiconductor device includes a material with which off-state current of a transistor can be sufficiently small; for example, an oxide semiconductor material is used. Further, transistors of memory cells of the semiconductor device, which include an oxide semiconductor material, are connected in series. Further, the same wiring (the j-th word line (j is a natural number greater than or equal to 2 and less than or equal to m)) is used as a wiring electrically connected to one of terminals of a capacitor of the j-th memory cell and a wiring electrically connected to a gate terminal of a transistor, in which a channel is formed in an oxide semiconductor layer, of the (j−1)-th memory cell. Therefore, the number of wirings per memory cell and the area occupied by one memory cell are reduced. | 02-02-2012 |
| 20120025274 | SOI SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE - An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side. | 02-02-2012 |
| 20120025253 | ORGANIC LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE WITH THE ORGANIC LIGHT-EMITTING ELEMENT - The present invention provides a white organic light-emitting element high in the emission efficiency. In particular, the invention provides a white organic light-emitting element that has an emission spectrum having peaks in the respective wavelength regions of red color, green color and blue color and is high in the emission efficiency. | 02-02-2012 |
| 20120025193 | Semiconductor Device and Driving Method Thereof - A voltage equal to the threshold value of a TFT ( | 02-02-2012 |
| 20120025191 | Semiconductor Device and Manufacturing Method Thereof - A method for manufacturing a semiconductor device, which enables miniaturization and reduction of defect, is provided. It includes forming an oxide semiconductor layer, and source and drain electrodes in contact with the oxide semiconductor layer, over an insulating surface; forming insulating layers over the source electrode and the drain electrode; forming a gate insulating layer over the oxide semiconductor layer, the source and drain electrodes, and the insulating layer; forming a conductive layer over the gate insulating layer; forming an insulating film covering the conductive layer; processing the insulating film so that at least part of a region of the conductive layer, which overlaps with the source electrode or the drain electrode, is exposed; and etching the exposed region of the conductive layer to form a gate electrode overlapping with at least part of the region sandwiched between the source electrode and the drain electrode, in a self-aligned manner. | 02-02-2012 |
| 20120025186 | LIGHT EMITTING DEVICE - The luminance of different colors of light emitted from EL elements in a pixel portion of a light emitting device is equalized and the luminance of light emitted from the EL elements is raised. The pixel portion of the light emitting device has EL elements whose EL layers contain triplet compounds and EL elements whose EL layers contain singlet compounds in combination. The luminance of light emitted from the plural EL elements is thus equalized. Furthermore, a hole transporting layer has a laminate structure to thereby cause the EL elements to emit light of higher luminance. | 02-02-2012 |
| 20120025064 | OPTICAL SENSOR DEVICE AND ELECTRONIC APPARATUS - In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can also be reduced. | 02-02-2012 |
| 20120024965 | SEMICONDUCTOR DEVICE AND IC LABEL, IC TAG, AND IC CARD PROVIDED WITH THE SEMICONDUCTOR DEVICE - A charge accumulation circuit having a structure in which a capacitor is divided into a plurality of pieces and the divided capacitors are connected in parallel through switches is provided. The charge accumulation circuit controls the switch provided between the capacitors and thus can dynamically vary electrostatic capacitance of the charge accumulation circuit which applies a voltage to a constant voltage circuit. | 02-02-2012 |
| 20120024963 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object of this invention is to provide a semiconductor device (an RFID) with reduced loss of voltage/current corresponding to a threshold value of a transistor, and having a voltage/current rectification property. Another object of this invention is to simplify a fabrication process and a circuit configuration. A rectifier circuit is provided in an element included in a semiconductor device (RFID) capable of communicating data wirelessly. As compared to the case where only a diode is provided, coils are provided between gate terminals and drain terminals of transistors constituting the diode in a rectifier circuit, so that the coils overlap an antenna which receives a radio wave, whereby a voltage output by the rectifier circuit is increased using electromagnetic coupling between the antenna which receives a radio wave and the coils, so that the rectification efficiency is improved. | 02-02-2012 |
| 20120021592 | APPARATUS AND METHOD FOR DOPING - There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current. | 01-26-2012 |
| 20120021588 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE - One object is to provide excellent electric characteristics of an end portion of a single crystal semiconductor layer having a tapered shape. An embrittled region is formed in a single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated ions. Then, the single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating film interposed therebetween and a first single crystal semiconductor layer is formed over the base substrate with the insulating film interposed therebetween by separating the single crystal semiconductor substrate at the embrittled region. After that, a second single crystal semiconductor layer having a tapered end portion is formed by performing dry etching on the first single crystal semiconductor layer, and etching is performed on the end portion of the second single crystal semiconductor layer in a state where a potential on the base substrate side is a ground potential. | 01-26-2012 |
| 20120021570 | METHOD FOR FORMING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A seed crystal including mixed phase grains having high crystallinity with a low grain density is formed under a first condition, and a microcrystalline semiconductor film is formed over the seed crystal under a second condition which allows the mixed phase grains in the seed crystal to grow to fill a space between the mixed phase grains. In the first condition, the flow rate of hydrogen is 50 times or greater and 1000 times or less that of a deposition gas containing silicon or germanium, and the pressure in a process chamber is greater than 1333 Pa and 13332 Pa or less. In the second condition, the flow rate of hydrogen is 100 times or greater and 2000 times or less that of a deposition gas containing silicon or germanium, and the pressure in the process chamber is 1333 Pa or greater and 13332 Pa or less. | 01-26-2012 |
| 20120021548 | Apparatus For Forming A Film And An Electroluminescence Device - A device having three evaporation sources and a unit for moving the respective evaporation sources in one chamber is used, whereby it becomes possible to increase efficiency of use of an evaporation material. Consequently, manufacturing cost can be reduced, and a uniform thickness can be obtained over an entire surface of a substrate even in the case in which a large area substrate is used. | 01-26-2012 |
| 20120021544 | DISPLAY DEVICE, METHOD FOR MANUFACTURING DISPLAY DEVICE, AND SOI SUBSTRATE - A manufacturing method is provided which achieves an SOI substrate with a large area and can improve productivity of manufacture of a display device using the SOI substrate. A plurality of single-crystalline semiconductor layers are bonded to a substrate having an insulating surface, and a circuit including a transistor is formed using the single-crystalline semiconductor layers, so that a display device is manufactured. Single-crystalline semiconductor layers separated from a single-crystalline semiconductor substrate are applied to the plurality of single-crystalline semiconductor layers. Each of the single-crystalline semiconductor layers has a size corresponding to one display panel (panel size). | 01-26-2012 |
| 20120021540 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors. | 01-26-2012 |
| 20120019756 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A liquid crystal dripping method has a problem in that an uncured sealant increases in width at the time of attaching a pair of substrates and thus a liquid crystal material enters the sealant and unevenness occurs in the inner periphery of the sealant. A region in which reduced is the speed of diffusion of liquid crystal at the time of attaching a pair of substrates is provided between a sealant and an orientation film. Further, time for diffusing the liquid crystal and coming in contact with the sealant is made long. Accordingly, the sealant is subjected to photo-curing before the liquid crystal comes in contact with the sealant. The region in which reduced is the speed of diffusion of the liquid crystal is formed using a material for forming a vertical orientation film, a silane coupling agent, a substance having a photocatalytic function, or the like. | 01-26-2012 |
| 20120019739 | REFLECTIVE LIQUID CRYSTAL DISPLAY PANEL AND DEVICE USING SAME - There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence nor the structure is complicated. | 01-26-2012 |
| 20120019567 | LIQUID CRYSTAL DISPLAY DEVICE AND DRIVING METHOD THEREOF - To improve the image quality of a liquid crystal display device. In the liquid crystal display device, writing of an image signal and the turning on the backlights are not sequentially performed in the entire pixel portion but are sequentially performed per specific region of the pixel portion. Thus, it is possible to increase the frequency of input of an image signal to each pixel of the liquid crystal display device. Accordingly, deterioration of display such as color break generated in the liquid crystal display device can be suppressed, and the image quality can be improved. | 01-26-2012 |
| 20120019300 | SHIFT REGISTER AND SEMICONDUCTOR DISPLAY DEVICE - The invention provides a shift register which can operate normally while suppressing a delay of signal and a rounding of waveform. The shift register of the invention includes a plurality of stages of flip-flop circuits each of which includes a clocked inverter. The clocked inverter includes a first transistor and a second transistor which are connected in series, a first compensation circuit including a third transistor and a fourth transistor which are connected in series, and a second compensation circuit including a fifth transistor and a transmission gate. According to the first compensation circuit, a timing at which a signal outputted from the flip-flop circuit rises or falls can be controlled in synchronization with an output of two stages before. The second compensation circuit can control a clock signal input can be controlled. | 01-26-2012 |
| 20120019192 | SEMICONDUCTOR DEVICE, COMMUNICATION SYSTEM, AND METHOD OF CHARGING THE SEMICONDUCTOR DEVICE - An object of the present invention to provide a semiconductor device including a battery that can be wirelessly charged, in which the battery can be charged even when the semiconductor device is not put close to a power feeder. Such a semiconductor device has a structure including an antenna circuit, a communication control circuit to conduct wireless communication via the antenna circuit, a battery to be charged with electric power which is externally wirelessly fed via the antenna circuit, and an oscillator circuit to wirelessly feed electric power via the antenna circuit. In addition, the battery in the semiconductor device is wirelessly charged and the semiconductor device externally feeds electric power wirelessly to a chargeable battery in another semiconductor device. | 01-26-2012 |
| 20120018808 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing a semiconductor device are provided. A semiconductor device comprises a first single-crystal semiconductor layer including a first channel formation region and a first impurity region over a substrate having an insulating surface, a first gate insulating layer over the first single-crystal semiconductor layer, a gate electrode over the first gate insulating layer, a first interlayer insulating layer over the first gate insulating layer, a second gate insulating layer over the gate electrode and the first interlayer insulating layer, and a second single-crystal semiconductor layer including a second channel formation region and a second impurity region over the second gate insulating layer. The first channel formation region, the gate electrode, and the second channel formation region are overlapped with each other. | 01-26-2012 |
| 20120018771 | LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE AND SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method. One feature of the invention is a light emitting device including a transistor and a light emitting element. In the light emitting element, an organic layer, a light emitting layer, and a second electrode are sequentially formed over a first electrode, and the transistor is electrically connected to the light emitting element through a wiring. Here, the wiring contains aluminum, carbon, and titanium. The organic layer is formed by a wet method. The first electrode which is in contact with the organic layer is formed from indium tin oxide containing titanium oxide. | 01-26-2012 |
| 20120018729 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element. | 01-26-2012 |
| 20120018727 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An insulating layer which releases a large amount of oxygen is used as an insulating layer in contact with a channel region of an oxide semiconductor layer, and an insulating layer which releases a small amount of oxygen is used as an insulating layer in contact with a source region and a drain region of the oxide semiconductor layer. By releasing oxygen from the insulating layer which releases a large amount of oxygen, oxygen deficiency in the channel region and an interface state density between the insulating layer and the channel region can be reduced, so that a highly reliable semiconductor device having small variation in electrical characteristics can be manufactured. The source region and the drain region are provided in contact with the insulating layer which releases a small amount of oxygen, thereby suppressing the increase of the resistance of the source region and the drain region. | 01-26-2012 |
| 20120017984 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device is provided, which comprises a first electrode, crystalline semiconductor particles, a semiconductor layer, and a second electrode. The crystalline semiconductor particles of which adjacent particles are fusion-bonded, the crystalline semiconductor particles have a first conductivity type, and the semiconductor layer has a second conductivity type which is different from the first conductivity type. | 01-26-2012 |
| 20120015247 | SILICON CRYSTAL BODY AND POWER STORAGE DEVICE USING THE SILICON CRYSTAL BODY - It is difficult to obtain discharge capacity as high as the theoretical capacity in the case where silicon is used as a negative electrode active material. Therefore, objects are to provide a negative electrode active material capable of increasing discharge capacity and to provide a high-performance power storage device including the negative electrode active material. As the negative electrode active material with which the objects are achieved, a silicon crystal body including a plurality of crystalline regions is provided. The silicon crystal body has one extension direction. The plurality of crystalline regions have respective crystal orientations that are substantially the same (also referred to as a preferred orientation). The extension direction and the preferred direction are substantially the same. | 01-19-2012 |
| 20120014157 | SEMICONDUCTOR DEVICE - A plurality of memory cells included in a memory cell array are divided into a plurality of blocks every plural rows. A common bit line is electrically connected to the divided bit lines through selection transistors in the blocks. One of the memory cells includes a first transistor, a second transistor, and a capacitor. The first transistor includes a first channel formation region. The second transistor includes a second channel formation region. The first channel formation region includes a semiconductor material different from the semiconductor material of the second channel formation region. | 01-19-2012 |
| 20120013394 | SOURCE FOLLOWER CIRCUIT OR BOOTSTRAP CIRCUIT, DRIVER CIRCUIT COMPRISING SUCH CIRCUIT, AND DISPLAY DEVICE COMPRISING SUCH DRIVER CIRCUIT - In the case of using an analog buffer circuit, an input voltage is required to be added a voltage equal to a voltage between the gate and source of a polycrystalline silicon TFT; therefore, a power supply voltage is increased, thus a power consumption is increased with heat. In view of the foregoing problem, the invention provides a depletion mode polycrystalline silicon TFT as a polycrystalline silicon used in an analog buffer circuit such as a source follower circuit. The depletion mode polycrystalline silicon TFT has a threshold voltage on its negative voltage side; therefore, an input voltage does not have to be increased as described above. As a result, a power supply voltage requires no increase, thus a low power consumption of a liquid crystal display device in particular can be realized. | 01-19-2012 |
| 20120013342 | SEMICONDUCTOR DEVICE - A semiconductor device with a built-in battery whose residual amount of the electrical energy can be detected accurately. The semiconductor device has a battery, a demodulation circuit, a control circuit which generates a signal having information about the residual amount of the electrical energy stored in the battery, and a transmission medium which displays the residual amount of the electrical energy in accordance with the signal. The demodulation circuit demodulates a signal input from an antenna which requests display of the residual amount of the electrical energy. Based on the demodulated signal, the control circuit starts to generate a signal having information about the residual amount of the electrical energy in the battery. | 01-19-2012 |
| 20120012986 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SOI SUBSTRATE - A method is demonstrated to form an SOI substrate having a silicon layer with reduced surface roughness in a high yield. The method includes the step of bonding a base substrate such as a glass substrate and a bond substrate such as a single crystal semiconductor substrate to each other, where a region in which bonding of the base substrate with the bond substrate cannot be performed is provided at the interface therebetween. Specifically, the method is exemplified by the combination of: irradiating the bond substrate with accelerated ions; forming an insulating layer over the bond substrate; forming a region in which bonding cannot be performed in part of the surface of the bond substrate; bonding the bond substrate and the base substrate to each other with the insulating layer therebetween; and separating the bond substrate from the base substrate, leaving a semiconductor layer over the base substrate. | 01-19-2012 |
| 20120012888 | LIGHT EMITTING DEVICE - A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving. | 01-19-2012 |
| 20120012887 | Light-Emitting Device - It is an object of the present invention is to provide a light-emitting device in which high luminance can be obtained with low power consumption by improving the extraction efficiency. A light-emitting device of the invention comprises an insulating film, a plurality of first electrodes being in contact with the insulating film and formed on the insulating film to be in parallel, an electroluminescent layer formed over the plurality of first electrodes, and a plurality of second electrodes intersecting with the plurality of first electrodes and formed over the electroluminescent layer in parallel, wherein the insulating film contains nitrogen and silicon and the first electrodes contain a conductive transparent oxide material and silicon oxide. | 01-19-2012 |
| 20120012853 | TFT ARRANGEMENT FOR DISPLAY DEVICE - A new TFT arrangement is demonstrated, which enables prevention of TFT to be formed over a joint portion between the adjacent SOI layers prepared by the process including the separation of a thin single crystal semiconductor layer from a semiconductor wafer. The TFT arrangement is characterized by the structure where a plurality of TFTs each belonging to different pixels is gathered and arranged close to an intersection portion of a scanning line and a signal line. This structure allows the distance between regions, which are provided with the plurality of TFTs, to be extremely large compared with the distance between adjacent TFTs in the conventional TFT arrangement in which all TFTs are arranged in at a regular interval. The formation of a TFT over the joint portion can be avoided by the present arrangement, which leads to the formation of a display device with a negligible amount of display defects. | 01-19-2012 |
| 20120012851 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A pixel TFT formed in a pixel region is formed on a first substrate by a channel etch type reverse stagger type TFT, and patterning of a source region and a drain region, and patterning of a pixel electrode are performed by the same photomask. A driver circuit formed by using TFTs having a crystalline semiconductor layer, and an input-output terminal dependent on the driver circuit, are taken as one unit. A plurality of units are formed on a third substrate, and afterward the third substrate is partitioned into individual units, and the obtained stick drivers are mounted on the first substrate. | 01-19-2012 |
| 20120012847 | DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME - One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor. | 01-19-2012 |
| 20120012845 | SEMICONDUCTOR DEVICE - A semiconductor device with a novel structure is provided, which can hold stored data even when no power is supplied and which has no limitations on the number of writing operations. A semiconductor device is formed using a material which enables off-state current of a transistor to be reduced significantly; e.g., an oxide semiconductor material which is a wide-gap semiconductor. With use of a semiconductor material which enables off-state current of a transistor to be reduced significantly, the semiconductor device can hold data for a long period. In a semiconductor device with a memory cell array, parasitic capacitances generated in the nodes of the first to the m-th memory cells connected in series are substantially equal, whereby the semiconductor device can operate stably. | 01-19-2012 |
| 20120012837 | SEMICONDUCTOR DEVICE - A semiconductor device with a novel structure in which stored data can be retained even when power is not supplied, and does not have a limitation on the number of write cycles. The semiconductor device includes a memory cell including a first transistor, a second transistor, and an insulating layer placed between a source region or a drain region of the first transistor and a channel formation region of the second transistor. The first transistor and the second transistor are provided to at least partly overlap with each other. The insulating layer and a gate insulating layer of the second transistor satisfy the following formula: (t | 01-19-2012 |
| 20120012836 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - When a transistor having bottom gate bottom contact structure is manufactured, for example, a conductive layer constituting a source and a drain has a three-layer structure and two-step etching is performed. In the first etching process, an etching method in which the etching rates for at least the second film and the third film are high is employed, and the first etching process is performed until at least the first film is exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a “layer provided below and in contact with the first film” is lower than that in the first etching process is employed. The side wall of the second film is slightly etched when a resist mask is removed after the second etching process. | 01-19-2012 |
| 20120009742 | Thin Film Transistor, Display Device Having Thin Film Transistor, And Method For Manufacturing The Same - A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device in a high yield are provided. In the thin film transistor, a gate electrode, a gate insulating film, crystal grains that mainly contain silicon and are provided for a surface of the gate insulating film, a semiconductor film that mainly contains germanium and covers the crystal grains and the gate insulating film, and a buffer layer in contact with the semiconductor film that mainly contains germanium overlap with one another. Further, the display device has the thin film transistor. | 01-12-2012 |
| 20120009698 | DISPLAY DEVICE, METHOD FOR MANUFACTURING THE SAME AND APPARATUS FOR MANUFACTURING THE SAME - The present inventions provides a method for manufacturing a film-type display device efficiently, and a method for manufacturing a large-size film-type display device, and an apparatus for manufacturing the film-type display device. An apparatus for manufacturing a film-type display device includes: transferring means for transferring a substrate over which an integrated circuit constituting the display device is provided; first separating means for separating the integrated circuit from the substrate by adhering a first sheet material to one surface of the integrated circuit; second separating means for separating the integrated circuit from the first sheet material by adhering a second sheet material to the other surface of the integrated circuit; processing means for forming one or both of a conductive film and an insulating film on the integrated circuit; and sealing means for sealing the processed integrated circuit with the second sheet material and a third sheet material. | 01-12-2012 |
| 20120007159 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - It is an object to provide a semiconductor device integrating various elements without using a semiconductor substrate, and a method of manufacturing the same. According to the present invention, a layer to be separated including an inductor, a capacitor, a resistor element, a TFT element, an embedded wiring and the like, is formed over a substrate, separated from the substrate, and transferred onto a circuit board | 01-12-2012 |
| 20120007096 | ID CHIP AND IC CARD - The present invention provides an ID chip or an IC card in which the mechanical strength of an integrated circuit can be enhanced without suppressing a circuit scale. An ID chip or an IC card of the present invention has an integrated circuit in which a TFT (a thin film transistor) is formed from an insulated thin semiconductor film. Further, an ID chip or an IC card of the present invention has a light-emitting element and a light-receiving element each using a non-single-crystal thin film for a layer conducting photoelectric conversion. Such a light-emitting element or a light-receiving element may be formed consecutively to (integrally with) an integrated circuit or may be formed separately and attached to an integrated circuit. | 01-12-2012 |
| 20120007095 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - This invention provides a semiconductor device having high operation performance and high reliability. An LDD region | 01-12-2012 |
| 20120007094 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device includes a thin film transistor. The thin film transistor includes a semiconductor film over a substrate, in which the semiconductor film includes a pair of first regions, a pair of second regions interposed between the pair of first regions, and a channel formation region interposed between the pair of second regions. A concentration of an impurity in the pair of second regions is smaller than a concentration of the impurity in the pair of first regions. The thin film transistor includes an insulating film, in which a portion of the insulating film is provided over the semiconductor film. The thin film transistor includes a conductive film over the portion, and the conductive film includes a taper shape. | 01-12-2012 |
| 20120007090 | Area Sensor and Display Apparatus Provided With An Area Sensor - An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light. | 01-12-2012 |
| 20120007087 | METHOD FOR MANUFACTURING DISPLAY DEVICE - A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, a second conductive film, and a first resist mask are formed; first etching is performed to expose at least a surface of the first conductive film; second etching accompanied by side etching is performed on part of the first conductive film to form a gate electrode layer; a second resist mask is formed; third etching is performed to form a source and drain electrode layers, a source and drain regions, and a semiconductor layer; a second insulating film is formed; an opening portion is formed in the second insulating film to partially expose the source or drain electrode layer; a pixel electrode is selectively formed in the opening portion and over the second insulating film; and a supporting portion formed using the gate electrode layer is formed in a region overlapping with the opening portion. | 01-12-2012 |
| 20120007078 | SEMICONDUCTOR DEVICE - It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10 | 01-12-2012 |
| 20120007066 | ANTHRACENE DERIVATIVE, MATERIAL FOR LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE - It is an object of the present invention to provide a novel material capable of realizing excellent color purity of blue, and a light emitting element and a light emitting device using the novel material. Further, it is an object of the present invention to provide which is highly reliable, and a light emitting element and a light emitting device using the novel material. The structure for solving the above problems in accordance with the present invention is an anthracene derivative simultaneously having a diphenylanthracene structure and a carbazole skeleton in a molecule as represented by structural formula (1): | 01-12-2012 |
| 20120003807 | METHOD FOR FORMING SEMICONDUCTOR REGION AND METHOD FOR MANUFACTURING POWER STORAGE DEVICE - To provide a method for manufacturing a power storage device which enables improvement in performance of the power storage device, such as an increase in discharge capacity. To provide a method for forming a semiconductor region which is used for a power storage device or the like so as to improve performance. A method for forming a crystalline semiconductor region includes the steps of: forming, over a conductive layer, a crystalline semiconductor region that includes a plurality of whiskers including a crystalline semiconductor by an LPCVD method; and performing heat treatment on the crystalline semiconductor region after supply of a source gas containing a deposition gas including silicon is stopped. A method for manufacturing a power storage device includes the step of using the crystalline semiconductor region as an active material layer of the power storage device. | 01-05-2012 |
| 20120003797 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - When a transistor including a conductive layer having a three-layer structure is manufactured, three-stage etching is performed. In the first etching process, an etching method in which the etching rates for the second film and the third film are high is employed, and the first etching process is performed until the first film is at least exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a “layer provided below and in contact with the first film” is lower than that in the first etching process is employed. In the third etching process, an etching method in which the etching rates for the first to the third films are higher than those in the second etching process is preferably employed. | 01-05-2012 |
| 20120003795 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - An object is to provide a manufacturing method of a semiconductor device having a high field effect mobility and including an oxide semiconductor layer in a semiconductor device including an oxide semiconductor. Another object is to provide a manufacturing method of a semiconductor device capable of high speed operation. An oxide semiconductor layer is terminated by a halogen element, and thus an increase in the contact resistance between the oxide semiconductor layer and a conductive layer in contact with the oxide semiconductor layer is suppressed. Therefore, the contact resistance between the oxide semiconductor layer and the conductive layer becomes favorable and a transistor having a high field effect mobility can be manufactured. | 01-05-2012 |
| 20120003539 | METHOD FOR MANUFACTURING ULTRA SMALL PARTICLE, POSITIVE ELECTRODE ACTIVE MATERIAL OF SECOND BATTERY USING THE METHOD FOR MANUFACTURING ULTRA SMALL PARTICLE AND METHOD FOR MANUFACTURING THE SAME, AND SECONDARY BATTERY USING THE POSITIVE ELECTRODE ACTIVE MATERIAL AND METHOD FOR MANUFACTURING THE SAME - An object is to form a positive electrode active material having small and highly uniform particles by a simple process. A template is formed by forming holes in the template by a nanoimprinting method, and the template is filled with a gel-like LiFePO | 01-05-2012 |
| 20120003538 | POSITIVE ELECTRODE ACTIVE MATERIAL OF POWER STORAGE DEVICE, POSITIVE ELECTRODE OF POWER STORAGE DEVICE, POWER STORAGE DEVICE, MANUFACTURING METHOD OF POSITIVE ELECTRODE ACTIVE MATERIAL OF POWER STORAGE DEVICE - As a positive electrode active material, a material which is represented by the general formula Li | 01-05-2012 |
| 20120003535 | ENERGY STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided are an energy storage device including an electrode in which lithium is introduced into a silicon layer and a method for manufacturing the energy storage device. A silicon layer is formed over a current collector, a solution including lithium is applied on the silicon layer, and heat treatment is performed thereon; thus, at least lithium can be introduced into the silicon layer. By using the solution including lithium, even when the silicon layer includes a plurality of silicon microparticles, the solution including lithium can enter a space between the microparticles and lithium can be introduced into the silicon microparticles which are in contact with the solution including lithium. Moreover, even when the silicon layer is a thin silicon film or includes a plurality of whiskers or whisker groups, the solution can be uniformly applied; accordingly, lithium can be included in silicon easily. | 01-05-2012 |
| 20120003530 | MANUFACTURING METHOD OF POWER STORAGE DEVICE - It is an object to improve performance of a power storage device, such as cycle characteristics. A power storage device includes a current collector and a crystalline semiconductor layer including a whisker, which is formed on and in close contact with the current collector. Separation of the crystalline semiconductor layer is suppressed by an increase of adhesion, whereby cycle characteristics in which a specific capacity of a tenth cycle number with respect to a first cycle number is greater than or equal to 90% is realized. In addition, cycle characteristics in which a specific capacity of a hundredth cycle number with respect to a first cycle number is greater than or equal to 70% is realized. | 01-05-2012 |
| 20120003529 | ELECTRODE MATERIAL AND METHOD FOR FORMING ELECTRODE MATERIAL - An object is to provide an electrode material with high electrical conductivity and a power storage device using the electrode material. An object is to provide an electrode material with high capacity and a power storage device using the electrode material. Provided is a particulate electrode material including a core containing a compound represented by a general formula Li | 01-05-2012 |
| 20120003383 | MANUFACTURING METHOD OF ENERGY STORAGE DEVICE - A manufacturing method of an energy storage device capable of increasing the discharge capacity or an energy storage device capable of suppression of degradation of an electrode due to repetitive charge and discharge is provided. In the manufacturing method, a crystalline silicon layer including a group of whiskers in which the whiskers are tightly formed is formed as an active material layer over a current collector by a low pressure chemical vapor deposition method using a gas containing silicon as a source gas and nitrogen or helium as a dilution gas. | 01-05-2012 |
| 20120003139 | METHOD FOR MANUFACTURING POWER STORAGE DEVICE - It is an object to provide a material for an electrode with improved electron conductivity and a power storage device using the material for an electrode. In a process for manufacturing a material for an electrode including a lithium phosphate compound represented by a general formula LiMPO | 01-05-2012 |
| 20120002349 | POWER STORAGE DEVICE, LITHIUM-ION SECONDARY BATTERY, ELECTRIC DOUBLE LAYER CAPACITOR AND LITHIUM-ION CAPACITOR - One object is to provide a power storage device including an electrolyte using a room-temperature ionic liquid which includes a univalent anion and a cyclic quaternary ammonium cation having excellent reduction resistance. Another object is to provide a high-performance power storage device. A room-temperature ionic liquid which includes a cyclic quaternary ammonium cation represented by a general formula (G1) below is used for an electrolyte of a power storage device. In the general formula (G1), one or two of R | 01-05-2012 |
| 20120002348 | ELECTRIC DOUBLE LAYER CAPACITOR, LITHIUM ION CAPACITOR AND MANUFACTURING METHOD THEREOF - A thin energy storage device having high capacity is obtained. An energy storage device having high output is obtained. A current collector and an active material layer are formed in the same manufacturing step. The number of manufacturing steps of an energy storage device is reduced. The manufacturing cost of an energy storage device is suppressed. One embodiment of the present invention relates to an electric double layer capacitor which includes a pair of electrodes including a porous metal material, and an electrolyte provided between the pair of electrodes; or a lithium ion capacitor which includes a positive electrode that is a porous metal body functioning as a positive electrode current collector and a positive electrode active material layer, a negative electrode including a negative electrode current collector and a negative electrode active material layer, and an electrolyte provided between the positive electrode and the negative electrode. | 01-05-2012 |
| 20120002133 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE - An object of the invention is to suppress degradation in image quality of a liquid crystal display device which performs display by field sequential method and to reduce power consumption of a backlight. The highest brightness of a first color light in a pixel region is detected. Gamma correction is performed so that transmittance of a pixel of the region displaying the highest brightness of the first color light is set to maximum and transmittance of other pixel of the region is decreased in accordance with lowering of the first color light intensity, and the region is irradiated with the highest brightness of the first color light. Similarly, a second color light is irradiated in another region concurrently with irradiation of the first color, whereby input of an image signal and lighting of the backlight are performed simultaneously in every region of the pixel portion. | 01-05-2012 |
| 20120002132 | DRIVING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE - Disclosed is a field-sequential liquid crystal display device having a plurality of pixels each of which is arranged to sequentially transmit light obtained by mixing at least two lights in addition to lights of three primary colors generated by a plurality of light sources. | 01-05-2012 |
| 20120002127 | LIQUID CRYSTAL DISPLAY DEVICE - An object is to provide a liquid crystal display device capable of image display according to an environment around the liquid crystal display device, e.g., in a bright environment or a dim environment. Another object is to provide a liquid crystal display device capable of displaying an image in both modes of a reflective mode in which external light is used as a light source and a transmissive mode in which a backlight is used. In order to achieve at least one of the above objects, a liquid crystal display device is provided with a region (a reflective region) where display is performed with reflection of incident light through a liquid crystal layer and a region (a transmissive region) where display is performed with transmission of light from a backlight and can switch the transmissive mode and the reflective mode. In the case where a full-color image is displayed, a pixel portion includes at least a first region and a second region, a plurality of lights of different hues are sequentially supplied to the first region according to a first order, and a plurality of lights of different hues are also sequentially supplied to the second region according to a second order which is different from the first order. | 01-05-2012 |
| 20120002090 | SOLID-STATE IMAGING DEVICE AND SEMICONDUCTOR DISPLAY DEVICE - An object is to provide a solid-state imaging device or a semiconductor display device with which a high-quality image can be taken. By performing operation using a global shutter method, a potential for controlling charge accumulation operation can be shared by all pixels. In addition, a first photosensor group includes a plurality of photosensors connected to a wiring supplied with an output signal, and a second photosensor group includes a plurality of photosensors connected to another wiring supplied with the output signal. A wiring for supplying a potential or a signal for controlling charge accumulation operation to the first photosensor group is connected to a wiring for supplying the potential or signal to the second photosensor group. | 01-05-2012 |
| 20120001955 | LIQUID CRYSTAL DISPLAY DEVICE - The liquid crystal display device includes a pixel portion including first and second regions and light sources. The first and second regions each include a liquid crystal element whose transmissivity is controlled in accordance with a voltage of an image signal and a transistor for controlling holding of the voltage, whose off-state current is extremely low. The light sources perform first and second drivings: lights whose hues are different from each other are sequentially supplied to the first region in a first rotating order and the lights are sequentially supplied to the second region in a second rotating order which is different from the first rotating order in the first driving; and a light having a single hue is supplied consecutively to one or both of the first and second regions in the second driving. The period for holding the voltage is different between the first and second drivings. | 01-05-2012 |
| 20120001954 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device comprising a backlight and a pixel portion including first to 2n-th scan lines, wherein, in a first case of expressing a color image, first pixels controlled by the first to n-th scan lines are configured to express a first image using at least one of first to third hues supplied in a first rotating order, and second pixels controlled by the (n+1)-th to 2n-th scan lines are configured to express a second image using at least one of the first to third hues supplied in a second rotating order, wherein, in a second case of expressing a monochrome image, the first and second pixels controlled by the first to 2n-th scan lines are configured to express the monochrome image by external light reflected by the reflective pixel electrode, and wherein the first rotating order is different from the second rotating order. | 01-05-2012 |
| 20120001953 | METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE - In a first subframe period, light sources of a first region and a third region emit lights at the same time; light sources of a second region and a fourth region emit no light at the same time, in which light emission of different colors is performed in the first region and the third region. In a second subframe period, light sources of the second region and the fourth region emit lights at the same time; light sources of the first region and the third region emit no light at the same time, in which light emission of different colors is performed in the second region and the fourth region. The first region and the third region are separated from each other with the second region interposed therebetween; and the second region and the fourth region are separated from each other with the third region interposed therebetween. | 01-05-2012 |
| 20120001881 | DRIVING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE - An object is to provide a driving method of a liquid crystal display device with a low power consumption and a high image quality. A pixel includes a liquid crystal element and a transistor which controls supply of an image signal to the liquid crystal element. The transistor includes, in a channel formation region, a semiconductor which has a wider band gap than a silicon semiconductor and has a lower intrinsic carrier density than silicon, and has an extremely low off-state current. In inversion driving of pixels, image signals having opposite polarities are input to a pair of signal lines between which a pixel electrode is disposed. By employing such a structure, the quality of the displayed image can be increased even in the absence of a capacitor in the pixel. | 01-05-2012 |
| 20120001878 | METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE - In a field-sequential liquid crystal display device, image quality and detection accuracy in image capture are improved by increasing the frequency of input of image signals and securing a sufficient imaging period. Image signals are concurrently supplied to pixels provided in a plurality of rows among pixels arranged in matrix. Further, image capture is concurrently performed in pixels provided in a plurality of rows among pixels arranged in matrix. Thus, the frequency of input of an image signal to each pixel of the liquid crystal display device can be increased and a sufficient imaging period can be secured. As a result, in the liquid crystal display device, display deterioration such as color break which is caused in a field-sequential liquid crystal display device can be suppressed and improvements in image quality and detection accuracy in image capture can be realized. | 01-05-2012 |
| 20120001874 | INPUT/OUTPUT DEVICE AND DRIVING METHOD THEREOF - An object is to reduce power consumption. An input/output device including: a display selection signal output circuit outputting a display selection signal during a first display mode and stopping outputting the display selection signal during a second display mode; a photodetection reset signal output circuit outputting N (N is a natural number) photodetection reset signals during a first photodetection mode and outputting M (M is a natural number smaller than N) photodetection reset signals during a second photodetection mode; an output selection signal output circuit outputting N output selection signals during the first photodetection mode and outputting M output selection signals during the second photodetection mode; and a photodetector circuit being reset in accordance with a photodetection reset signal, generating data according to an intensity of light entering the photodetector circuit subsequently, and outputting the data as a data signal in accordance with the output selection signal. | 01-05-2012 |
| 20120001244 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREFOR - In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film. | 01-05-2012 |
| 20120001243 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limit on the number of write operations. The semiconductor device includes a first memory cell including a first transistor and a second transistor, a second memory cell including a third transistor and a fourth transistor, and a driver circuit. The first transistor and the second transistor overlap at least partly with each other. The third transistor and the fourth transistor overlap at least partly with each other. The second memory cell is provided over the first memory cell. The first transistor includes a first semiconductor material. The second transistor, the third transistor, and the fourth transistor include a second semiconductor material. | 01-05-2012 |
| 20120001187 | Electronic Device - There is provided an electronic device in which the deterioration of the device is prevented and an aperture ratio is improved without using a black mask and without increasing the number of masks. In the electronic device, a first electrode ( | 01-05-2012 |
| 20120001181 | LAYER HAVING FUNCTIONALITY, METHOD FOR FORMING FLEXIBLE SUBSTRATE HAVING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a method for forming a layer having functionality including a conductive layer and a colored layer and a flexible substrate having a layer having functionality with a high yield. Further, it is an object of the present invention to provide a method for manufacturing a semiconductor device that is small-sized, thin, and lightweight. After coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, after attaching an adhesive to the layer having functionality, the layer having functionality is peeled from the substrate. Further, after coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, an adhesive is attached to the layer having functionality. Thereafter, the layer having functionality is peeled from the substrate, and a flexible substrate is attached to the layer having functionality. | 01-05-2012 |
| 20120001179 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. A semiconductor device having a stacked-layer structure of a gate insulating layer; a first gate electrode in contact with one surface of the gate insulating layer; an oxide semiconductor layer in contact with the other surface of the gate insulating layer and overlapping with the first gate electrode; and a source electrode, a drain electrode, and an oxide insulating layer which are in contact with the oxide semiconductor layer is provided, in which the nitrogen concentration of the oxide semiconductor layer is 2×10 | 01-05-2012 |
| 20120001178 | THIN FILM TRANSISTOR - A thin film transistor with favorable electric characteristics is provided. The thin film transistor includes a gate electrode, a gate insulating layer, a semiconductor layer which includes a microcrystalline semiconductor region and an amorphous semiconductor region, an impurity semiconductor layer, a wiring, a first oxide region provided between the microcrystalline semiconductor region and the wiring, and a second oxide region provided between the amorphous semiconductor region and the wiring. wherein a line tangent to the highest inclination of an oxygen profile in the first oxide region (m1) and a line tangent to the highest inclination of an oxygen profile in the second oxide region (m2) satisfy a relation of 1| 01-05-2012 | |
| 20120001170 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and improved reliability. In a transistor including an oxide semiconductor film, insulating films each including a material containing a Group 13 element and oxygen are formed in contact with the oxide semiconductor film, whereby the interfaces with the oxide semiconductor film can be kept in a favorable state. Further, the insulating films each include a region where the proportion of oxygen is higher than that in the stoichiometric composition, so that oxygen is supplied to the oxide semiconductor film; thus, oxygen defects in the oxide semiconductor film can be reduced. Furthermore, the insulating films in contact with the oxide semiconductor film each have a stacked structure so that films each containing aluminum are provided over and under the oxide semiconductor film, whereby entry of water into the oxide semiconductor film can be prevented. | 01-05-2012 |
| 20120001169 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device having favorable electric characteristics and a manufacturing method thereof are provided. A transistor includes an oxide semiconductor layer formed over an insulating layer, a source electrode layer and a drain electrode layer which overlap with part of the oxide semiconductor layer, a gate insulating layer in contact with part of the oxide semiconductor layer, and a gate electrode layer over the gate insulating layer. In the transistor, a buffer layer having n-type conductivity is formed between the source electrode layer and the oxide semiconductor layer and between the drain electrode layer and the oxide semiconductor layer. Thus, parasitic resistance is reduced, resulting in improvement of on-state characteristics of the transistor. | 01-05-2012 |
| 20120001168 | SEMICONDUCTOR DEVICE - In a transistor including an oxide semiconductor, hydrogen in the oxide semiconductor leads to degradation of electric characteristics of the transistor. Thus, an object is to provide a semiconductor device having good electrical characteristics. An insulating layer in contact with an oxide semiconductor layer where a channel region is formed is formed by a plasma CVD method using a silicon halide. The insulating layer thus formed has a hydrogen concentration less than 6×10 | 01-05-2012 |
| 20110318916 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - An object is to suppress deterioration of element characteristics even when an oxide semiconductor is formed after a gate insulating layer, a source electrode layer, and a drain electrode layer are formed. A gate electrode layer is formed over a substrate. A gate insulating layer is formed over the gate electrode layer. A source electrode layer and a drain electrode layer are formed over the gate insulating layer. Surface treatment is performed on surfaces of the gate insulating layer, the source electrode layer, and the drain electrode layer which are formed over the substrate. After the surface treatment is performed, an oxide semiconductor layer is formed over the gate insulating layer, the source electrode layer, and the drain electrode layer. | 12-29-2011 |
| 20110318908 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS - The present invention is a semiconductor manufacturing apparatus by which an impurity can be introduced into an active layer at a low and a stable concentration in order to form semiconductor elements that have little variation in threshold voltage. In the semiconductor manufacturing apparatus that includes a washing unit; an impurity introduction unit used to attach the impurity to the surface of the semiconductor film; a laser crystallization unit used to crystallize the semiconductor film to which an impurity has been attached; and transfer robots, the amount of the impurity attached to the semiconductor film is controlled by the length of time of exposure of the substrate in the impurity introduction unit, and the semiconductor film is crystallized while a crystalline semiconductor film that contains an impurity at low concentration is formed simultaneously by laser crystallization. | 12-29-2011 |
| 20110318896 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a semiconductor device having a raised source and drain structure, in forming a raised region by etching, etching of an island-like semiconductor film which is an active layer is inhibited. In a method for manufacturing a semiconductor device, an insulating film is formed by oxidizing or nitriding the surface of an island-like semiconductor film, a semiconductor film is formed on a region which is a part of the insulating film, a gate electrode is formed over the insulating film, an impurity element imparting one conductivity type is added to the island-like semiconductor film and the semiconductor film using the gate electrode as a mask, the impurity element is activated by heating the island-like semiconductor film and the semiconductor film, and the part of the insulating film between the island-like semiconductor film and the semiconductor film disappears by heating the island-like semiconductor film and the semiconductor film. | 12-29-2011 |
| 20110318889 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to provide a manufacturing method of a semiconductor device in which a defect in characteristics due to a crack occurring in a semiconductor device is reduced. Provision of a crack suppression layer formed of a metal film in the periphery of a semiconductor element makes it possible to suppress a crack occurring from the outer periphery of a substrate and reduce damage to the semiconductor element. In addition, even if the semiconductor device is subjected to physical forces from the outer periphery in separation and transposition steps, progression (growth) of a crack to the semiconductor device can be suppressed by the crack suppression layer. | 12-29-2011 |
| 20110318888 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device comprises the steps of forming a seed over the insulating film by introducing hydrogen and a deposition gas into a first treatment chamber under a first condition and forming a microcrystalline semiconductor film over the seed by introducing hydrogen and the deposition gas into a second treatment chamber under a second condition: a second flow rate of the deposition gas is periodically changed between a first value and a second value; and a second pressure in the second treatment chamber is higher than or equal to 1.0×10 | 12-29-2011 |
| 20110318881 | SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a method for manufacturing a semiconductor device, which prevents waste generation from being caused peeling of films and prevents failure of peeling from being caused by waste due to peeling of films. A first semiconductor substrate is used which has a structure in which a peeling layer is not formed in a section subjected to a first dividing treatment, so that the peeling layer is not exposed at the end surface of a second semiconductor substrate when the second semiconductor substrate is cut out of the first semiconductor substrate. In addition, a supporting material is provided on a layer to be peeled of the second semiconductor substrate before the second semiconductor substrate is subjected to a second dividing treatment. | 12-29-2011 |
| 20110318875 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed. | 12-29-2011 |
| 20110318864 | METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to form an uneven structure on a surface thereof. The single crystal silicon layer is obtained in the following manner; an embrittlement layer is formed in a single crystal silicon substrate; one surface of a supporting substrate and one surface of an insulating layer formed over the single crystal silicon substrate are disposed to be in contact and bonded; heat treatment is performed; and the single crystal silicon layer is formed over the supporting substrate by separating part of the single crystal silicon substrate fixed to the supporting substrate along the embrittlement layer or a periphery of the embrittlement layer. Then, irradiation with a laser beam is performed on a separation surface of the single crystal silicon layer through an optical modulator which modulates light intensity regularly, and unevenness is formed on the surface. Due to the unevenness, reflection of incident light is reduced and absorptance with respect to light is improved, therefore, photoelectric conversion efficiency of the photoelectric conversion device is improved. | 12-29-2011 |
| 20110318851 | MANUFACTURING METHOD AND TEST METHOD OF SEMICONDUCTOR DEVICE - Provided is a test method by which a transistor whose reliability is low can be detected with low stress and high accuracy in a shorter period of time than a BT test. Provided is to detect a transistor whose reliability is high in a shorter period of time than a BT test and manufacture an electronic device with high reliability efficiently. Hysteresis characteristics revealed in the result of the Vg-Id measurement with light irradiation to the transistor correlate with the result of a BT test; whether the reliability of the transistor is Good or Not-Good can be judged. Accordingly, the test method by which a transistor whose reliability is low can be detected with low stress and high accuracy in a shorter period of time than a BT test can be provided. | 12-29-2011 |
| 20110317500 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - Disclosed is a semiconductor device having a memory cell which comprises a transistor having a control gate and a storage gate. The storage gate comprises an oxide semiconductor and is able to be a conductor and an insulator depending on the potential of the storage gate and the potential of the control gate. Data is written by setting the potential of the control gate to allow the storage gate to be a conductor, supplying a potential of data to be stored to the storage gate, and setting the potential of the control gate to allow the storage gate to be an insulator. Data is read by supplying a potential for reading to a read signal line connected to one of a source and a drain of the transistor and detecting the change in potential of a bit line connected to the other of the source and the drain. | 12-29-2011 |
| 20110317474 | SEMICONDUCTOR DEVICE - A semiconductor device includes a source line, a bit line, and first to m-th (m is a natural number) memory cells connected in series between the source line and the bit line. Each of the first to m-th memory cells includes a first transistor having a first gate terminal, a first source terminal, and a first drain terminal, a second transistor having a second gate terminal, a second source terminal, and a second drain terminal, and a capacitor. The node of the k-th memory cell is supplied with a potential higher than that of the second gate terminal of the k-th memory cell in a data holding period in which the second gate terminal is supplied with a potential at which the second transistor is turned off. | 12-29-2011 |
| 20110317108 | Semiconductor Device and Manufacturing Method Thereof - The aperture ratio of a pixel of a reflecting type display device is improved without increasing the number of masks and without using a black mask. Locations for light shielding between pixels are arranged such that a pixel electrode overlaps with a portion of a gate wiring and a source wiring. In locations for shielding TFTs, a high pixel aperture ratio is realized by forming a color filter (red, or lamination of red and blue), formed on an opposing substrate. | 12-29-2011 |
| 20110316818 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC APPLIANCE - Included are a display panel including first to third pixel regions and a driver circuit; a backlight portion divided into a first light source region where light is emitted in response to input of a video signal to the first pixel region, a second light source region where light is emitted in response to input of a video signal to the second pixel region, and a third light source region where light is emitted in response to input of a video signal to the third pixel region; a video signal selection circuit used to supply the video signals from plural memory circuits to the driver circuit; a control circuit that supplies a control signal for controlling the driver circuit; a sequence determination circuit that supplies a backlight control signal and a selection signal; and a random number generation circuit used for selection from colors in the sequence determination circuit. | 12-29-2011 |
| 20110316082 | SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF - An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate. | 12-29-2011 |
| 20110316057 | WIRING BOARD, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREOF - It is an object to reduce defective conduction in a wiring board or a semiconductor device whose integration degree is increased. It is another object to manufacture a highly reliable wiring board or semiconductor device with high yield. In a wiring board or a semiconductor device having a multilayer wiring structure, a conductive layer having a curved surface is used in connection between conductive layers used for the wirings. The top of a conductive layer in a lower layer exposed by removal of an insulating layer therearound has a curved surface, so that coverage of the conductive layer in the lower layer with a conductive layer in an upper layer stacked thereover can be favorable. A conductive layer is etched using a resist mask having a curved surface, so that a conductive layer having a curved surface is formed. | 12-29-2011 |
| 20110315993 | Light Emitting Device and Method of Manufacturing the Same - There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line. | 12-29-2011 |
| 20110315990 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPLIANCE - To provide a semiconductor device in which a channel formation region can be thinned without adversely affecting a source region and a drain region through a simple process and a method for manufacturing the semiconductor device. In the method for manufacturing a semiconductor device, a semiconductor film, having a thickness smaller than a height of a projection of a substrate, is formed over a surface of the substrate having the projections; the semiconductor film is etched to have an island shape with a resist used as a mask; the resist is etched to expose a portion of the semiconductor film which covers a top surface of the projection; and the exposed portion of the semiconductor film is etched to be thin, while the adjacent portions of the semiconductor film on both sides of the projection remain covered with the resist. | 12-29-2011 |
| 20110315979 | TRANSISTOR AND SEMICONDUCTOR DEVICE - Manufactured is a transistor including an oxide semiconductor layer, a source electrode layer and a drain electrode layer overlapping with part of the oxide semiconductor layer, a gate insulating layer overlapping with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode overlapping with part of the oxide semiconductor layer with the gate insulating layer provided therebetween, wherein, after the oxide semiconductor layer which is to be a channel formation region is irradiated with light and the light irradiation is stopped, a relaxation time of carriers in photoresponse characteristics of the oxide semiconductor layer has at least two kinds of modes: τ | 12-29-2011 |
| 20110315969 | LUMINESCENT DEVICE AND PROCESS OF MANUFACTURING THE SAME - In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used. | 12-29-2011 |
| 20110315900 | METHOD FOR MANUFACTURING SOI SUBSTRATE - An object is to provide a method for manufacturing an SOI substrate, by which defective bonding can be prevented. An embrittled layer is formed in a region of a semiconductor substrate at a predetermined depth; an insulating layer is formed over the semiconductor substrate; the outer edge of the semiconductor substrate is selectively etched on the insulating layer side to a region at a greater depth than the embrittled layer; and the semiconductor substrate and a substrate having an insulating surface are superposed on each other and bonded to each other with the insulating layer interposed therebetween. The semiconductor substrate is heated to be separated at the embrittled layer while a semiconductor layer is left remaining over the substrate having an insulating surface. | 12-29-2011 |
| 20110315861 | PHOTOELECTRIC CONVERSION DEVICE - It is an object to provide a photoelectric conversion device whose power consumption and a mounting area are reduced and yield is improved and further to provide a photoelectric conversion device whose number of manufacturing processes and manufacturing cost are reduced. A photoelectric conversion device includes a photoelectric conversion element for outputting photocurrent corresponding to illuminance, and a resistor changing resistance corresponding to illuminance. In the photoelectric conversion device, one terminal of the photoelectric conversion element and one terminal of the resistor are electrically connected in series; the other terminal of the photoelectric conversion element is connected to a high power supply potential; the other terminal of the resistor is connected to a low power supply potential; and a light intensity adjusting unit is provided on a light reception surface side of the photoelectric conversion element or the resistor to adjust illuminance. | 12-29-2011 |
| 20110315780 | SEMICONDUCTOR DEVICE AND WIRELESS COMMUNICATION SYSTEM USING THE SAME - Initialization of a semiconductor device can be efficiently performed, which transmits and receives data through wireless communication. The semiconductor device includes an antenna, a power source circuit, a circuit which uses a DC voltage generated by the power source circuit as a power source voltage, and a resistor. The antenna includes a pair of terminals and receives a wireless signal (a modulated carrier wave). The power source circuit includes a first terminal and a second terminal and generates a DC voltage between the first terminal and the second terminal by using a received wireless signal (the modulated carrier wave). The resistor is connected between the first terminal and the second terminal. In this manner, the semiconductor device and the wireless communication system can transmit and receive data accurately. | 12-29-2011 |
| 20110312165 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6×10 | 12-22-2011 |
| 20110312127 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to provide a method for manufacturing a semiconductor device including an oxide semiconductor and having improved electric characteristics. The semiconductor device includes an oxide semiconductor film, a gate electrode overlapping the oxide semiconductor film, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The method includes the steps of forming a first insulating film including gallium oxide over and in contact with the oxide semiconductor film; forming a second insulating film over and in contact with the first insulating film; forming a resist mask over the second insulating film; forming a contact hole by performing dry etching on the first insulating film and the second insulating film; removing the resist mask by ashing using oxygen plasma; and forming a wiring electrically connected to at least one of the gate electrode, the source electrode, and the drain electrode through the contact hole. | 12-22-2011 |
| 20110312121 | METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A method for manufacturing a photoelectric conversion device including a first-conductivity-type crystalline semiconductor region, an intrinsic crystalline semiconductor region, and a second-conductivity-type semiconductor region that are stacked over an electrode is provided for a new anti-reflection structure. An interface between the electrode and the first-conductivity-type crystalline semiconductor region is flat. The intrinsic crystalline semiconductor region includes a crystalline semiconductor region, and a plurality of whiskers that are provided over the crystalline semiconductor region and include a crystalline semiconductor. The first-conductivity-type crystalline semiconductor region and the intrinsic crystalline semiconductor region are formed by a low pressure chemical vapor deposition method at a temperature higher than 550° C. and lower than 650° C. The second-conductivity-type semiconductor region is formed by a low pressure chemical vapor deposition method at a temperature lower than or equal to 550° C. or higher than or equal to 650° C. | 12-22-2011 |
| 20110312118 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A micromachine includes a microstructure and a semiconductor element formed over one insulating substrate. The micromachine includes including a movable layer containing polycrystalline silicon and a space below or above the layer. Such polycrystalline silicon is formed on an insulating surface, so that it is used as a microstructure and used for forming a semiconductor element. Accordingly, a semiconductor device may include a microstructure and a semiconductor provided over one insulating substrate. | 12-22-2011 |
| 20110312114 | METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE - It is an object to prevent disordered orientation of liquid crystal molecules which is due to division of substrates even when a liquid crystal dripping method is used, and to provide a method for manufacturing a liquid crystal display device in which liquid crystal is not adversely affected even when a sealant not cured and liquid crystal are in contact. In a method for manufacturing a liquid crystal display device using a liquid crystal dripping method, a scribe groove is provided for at least one of a pair of substrates with a diamond cutter or the like before the pair of substrates are attached under reduced pressure. After the scribing, the pair of substrates are attached under reduced pressure, heat treatment for curing the sealant and aligning the liquid crystal molecules is performed, and the substrates are divided by applying impact using a breaking apparatus. | 12-22-2011 |
| 20110312111 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof. | 12-22-2011 |
| 20110310381 | PHOTOSENSOR, SEMICONDUCTOR DEVICE INCLUDING PHOTOSENSOR, AND LIGHT MEASUREMENT METHOD USING PHOTOSENSOR - An object is to provide a photosensor utilizing an oxide semiconductor in which a refreshing operation is unnecessary, a semiconductor device provided with the photosensor, and a light measurement method utilizing the photosensor. It is found that a constant gate current can be obtained by applying a gate voltage in a pulsed manner to a transistor including a channel formed using an oxide semiconductor, and this is applied to a photosensor. Since a refreshing operation of the photosensor is unnecessary, it is possible to measure the illuminance of light with small power consumption through a high-speed and easy measurement procedure. A transistor utilizing an oxide semiconductor having a relatively high mobility, a small S value, and a small off-state current can form a photosensor; therefore, a multifunction semiconductor device can be obtained through a small number of steps. | 12-22-2011 |
| 20110310133 | DRIVING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE - To improve the quality of a liquid crystal display device, writing of an image signal and lighting of a backlight are sequentially performed not in the whole pixel portion of the liquid crystal display device but in each given region of the pixel portion. Thus, the frequency of input of an image signal to each pixel of the liquid crystal display device can be increased. As a result, display degradation caused in the liquid crystal display device such as color break can be suppressed, and the quality of an image can be improved. | 12-22-2011 |
| 20110310132 | METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE - Image quality of a field-sequential liquid crystal display device is improved by increasing the frequency of input of an image signal. Among pixels arranged in matrix, image signals are concurrently supplied to pixels provided in a plurality of rows. Thus, the frequency of input of an image signal to each of the pixels of the liquid crystal display device can be increased. As a result, in the liquid crystal display device, display deterioration such as color break which is caused in a field-sequential liquid crystal display device can be suppressed and image quality can be improved. | 12-22-2011 |
| 20110309904 | ANTENNA, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING ANTENNA - In an antenna and a semiconductor device including the antenna, an object is to reduce the distance between electrodes of a capacitor as much as possible, reduce the area of the electrode of the capacitor as much as possible, and prevent the suppression of response sensitivity and a response range of the semiconductor device. The present invention relates to an antenna including an antenna coil provided over a first region of a base and a capacitor which uses a second region of the base as a dielectric body and which has electrodes provided for opposite planes of the second region of the base, wherein the second region of the base is thinner than the first region of the base, and also relates to a semiconductor device including the antenna. | 12-22-2011 |
| 20110309689 | ELECTRIC POWER TRANSMITTING DEVICE, ELECTRIC POWER RECEIVING DEVICE, AND POWER SUPPLY METHOD USING ELECTRIC POWER TRANSMITTING AND RECEIVING DEVICES - In electric power supply through wireless signals, electric power is supplied efficiently, even when distance fluctuation is caused between an electric power transmitting device and an electric power receiving device. Even when distance fluctuation is caused between the electric power transmitting device for supplying electric power with the use of wireless signals and the electric power receiving device for receiving electric power supplied from the electric power transmitting device, the Q value of the electric power transmitting device is adjusted to optimize the transmission efficiency. The impedance of a resonance circuit of the electric power transmitting device is fluctuated at a constant frequency, the resulting reflected wave is detected as a response signal by the electric power transmitting device, and the Q value of the electric power transmitting device is adjusted to optimize the transmission efficiency. | 12-22-2011 |
| 20110309688 | WIRELESS POWER FEEDING SYSTEM AND WIRELESS POWER FEEDING METHOD - An object is to provide a power feeding system and a power feeding method which are higher convenient for a power feeding user on the power receiving side. Another object is to provide a power feeding system and a power feeding method which can offer efficient services by determining or managing a power feeding user and controlling the amount of power supplied to the power receiver appropriately by a company on the power feeding side. A power feeding device which supplies power to a power receiver wirelessly manages the power receiver on the basis of identification information of the power receiver and controls power transmitted to the power receiver on the basis of position information of the power receiver. | 12-22-2011 |
| 20110309456 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. In a transistor including an oxide semiconductor film, the oxide semiconductor film is subjected to dehydration or dehydrogenation performed by heat treatment. In addition, as a gate insulating film in contact with the oxide semiconductor film, an insulating film containing oxygen, preferably, a gate insulating film including a region containing oxygen with a higher proportion than the stoichiometric composition is used. Thus, oxygen is supplied from the gate insulating film to the oxide semiconductor film. Further, a metal oxide film is used as part of the gate insulating film, whereby reincorporation of an impurity such as hydrogen or water into the oxide semiconductor is suppressed. | 12-22-2011 |
| 20110309411 | FIELD EFFECT TRANSISTOR - An insulating film is provided over one surface of a first semiconductor layer including a first oxide semiconductor including indium as a main component, and a second semiconductor layer including an i-type second oxide semiconductor is provided in contact with the other surface. The energy difference between a vacuum level and a Fermi level in the second oxide semiconductor is larger than that in the first oxide semiconductor. In the first semiconductor layer, a region in the vicinity of the junction surface with the second oxide semiconductor which satisfies the above condition is a region having an extremely low carrier concentration (a quasi-i-type region). By using the region as a channel, the off-state current can be reduced. Further, a drain current of the FET flows through the first oxide semiconductor having a high mobility; accordingly, a large amount of current can be extracted. | 12-22-2011 |
| 20110309369 | LIQUID CRYSTAL DISPLAY DEVICE - Techniques are provided for unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings | 12-22-2011 |
| 20110309368 | SEMICONDUCTOR DEVICE - Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented. | 12-22-2011 |
| 20110309364 | SEMICONDUCTOR DISPLAY DEVICE - It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulating film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT. | 12-22-2011 |
| 20110309355 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than 6×10 | 12-22-2011 |
| 20110308935 | METHOD OF MANUFACTURING POWER STORAGE DEVICE - An object is to provide a method of manufacturing a lithium-ion secondary battery suitable for mass production. A lithium-ion secondary battery is manufactured in such a manner that a positive electrode layer is formed on a base including a plane by chemical vapor deposition which is specifically metal-organic chemical vapor deposition, an electrolyte layer is formed on the positive electrode layer, and a negative electrode layer is formed on the electrolyte layer. The positive electrode layer is formed with a MOCVD apparatus. The MOCVD apparatus is an apparatus with which a liquid or a solid of an organic metal raw material is vaporized to produce a gas and the gas is reacted to undergo pyrolysis so that a film is formed. By forming all the layers using sputtering, evaporation, or chemical vapor deposition, a solid lithium-ion secondary battery can also be realized. | 12-22-2011 |
| 20110308600 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME - A photoelectric conversion device having a novel anti-reflection structure is provided. An uneven structure on a surface of a semiconductor is formed by growth of the same or different kind of semiconductor instead of forming an anti-reflection structure by etching a surface of a semiconductor substrate or a semiconductor film. For example, a semiconductor layer including a plurality of projections is provided on a light incident plane side of a photoelectric conversion device, thereby considerably reducing surface reflection. Such a structure can be formed by a vapor deposition method; therefore, contamination of the semiconductor is not caused. | 12-22-2011 |
| 20110308589 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object of the present invention is to provide a photoelectric conversion device having a novel anti-reflection structure. An uneven structure is formed on a surface of a semiconductor by growth of the same or a different kind of semiconductor instead of forming an anti-reflection structure by etching a surface of a semiconductor substrate or a semiconductor film. For example, a semiconductor layer including a plurality of projections is provided on a light incident plane side of a photoelectric conversion device, thereby considerably reducing surface reflection. Such a structure can be formed by a vapor deposition method; therefore, the contamination of the semiconductor is not caused. | 12-22-2011 |
| 20110308588 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - A photoelectric conversion device having a high electric generating capacity at low illuminance, in which a semiconductor layer is appropriately separated and short circuit of a side surface portion of a cell is prevented. The photoelectric conversion device includes an isolation groove formed between one first electrode and the other first electrode that is adjacent to the one first electrode; a stack including a first semiconductor layer having one conductivity type over the first electrode, a second semiconductor layer formed using an intrinsic semiconductor, and a third semiconductor layer having a conductivity type opposite to the one conductivity type; and a connection electrode connecting one first electrode and a second electrode that is in contact with a third semiconductor layer included in a stack formed over the other first electrode that is adjacent to the one first electrode. A side surface portion of the second semiconductor layer is not crystallized. | 12-22-2011 |
| 20110308587 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME - A photoelectric conversion device having a new anti-reflection structure is provided. The photoelectric conversion device includes a first-conductivity-type crystalline semiconductor region, an intrinsic crystalline semiconductor region, an intrinsic semiconductor region, and a second-conductivity-type semiconductor region that are stacked over a first electrode. An interface between the first electrode and the first-conductivity-type crystalline semiconductor region is flat. The intrinsic crystalline semiconductor region includes a crystalline semiconductor region, and a plurality of whiskers that are provided over the crystalline semiconductor region and include a crystalline semiconductor. In other words, the intrinsic crystalline semiconductor region includes the plurality of whiskers; thus, a surface of the second electrode is uneven. Further, a concentration gradient of an impurity element imparting the first conductivity type is formed from the first-conductivity-type crystalline semiconductor region toward the intrinsic crystalline semiconductor region. | 12-22-2011 |
| 20110308586 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - A photoelectric conversion device having a new anti-reflection structure is provided. A photoelectric conversion device includes a first-conductivity-type crystalline semiconductor region that is provided over a conductive layer; a crystalline semiconductor region that is provided over the first-conductivity-type crystalline semiconductor region and has an uneven surface by including a plurality of whiskers including a crystalline semiconductor; and a second-conductivity-type crystalline semiconductor region that covers the uneven surface of the crystalline semiconductor region having the uneven surface, the second conductivity type being opposite to the first conductivity type. In the photoelectric conversion device, a concentration gradient of an impurity element imparting the first conductivity type is formed from the first-conductivity-type crystalline semiconductor region toward the crystalline semiconductor region having the uneven surface. | 12-22-2011 |
| 20110308582 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURNING METHOD THEREOF - A photoelectric conversion device with a novel anti-reflection structure is provided. An uneven structure is formed on a surface of a semiconductor by growth of the same or different kind of semiconductor instead of forming an anti-reflection structure by etching a surface of a semiconductor substrate or a semiconductor film. For example, a semiconductor layer including a plurality of projections is provided for a light incident plane side of the photoelectric conversion device, thereby considerably reducing surface reflection. Such a structure can be formed by a vapor deposition method; therefore, the contamination of the semiconductor is not caused. | 12-22-2011 |
| 20110306162 | PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - A photovoltaic device uses a single crystal or polycrystalline semiconductor layer which is separated from a single crystal or polycrystalline semiconductor substrate as a photoelectric conversion layer and has a SOI structure in which the semiconductor layer is bonded to a substrate having an insulating surface or an insulating substrate. A single crystal semiconductor layer which is a separated surface layer part of a single crystal semiconductor substrate and is transferred is used as a photoelectric conversion layer and includes an impurity semiconductor layer to which hydrogen or halogen is added on a light incidence surface or on an opposite surface. The semiconductor layer is fixed to a substrate having an insulating surface or an insulating substrate. | 12-15-2011 |
| 20110305958 | POWER STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - An object is to provide a power storage device with improved cycle characteristics and a method of manufacturing the power storage device. Another object is to provide an application mode of the power storage device for which the above power storage device is used. In the method of manufacturing the power storage device, an active material layer is formed over a current collector, a solid electrolyte layer is formed over the active material layer after a natural oxide film over the active material layer is removed, and a liquid electrolyte is provided so as to be in contact with the solid electrolyte layer. Accordingly, decomposition and deterioration of the electrolyte solution which are caused by the contact between the active material layer and the electrolyte solution can be prevented, and cycle characteristics of the power storage device can be improved. | 12-15-2011 |
| 20110305950 | POWER STORAGE DEVICE - An electrode for a power storage device with less deterioration due to charge and discharge and a power storage device using the electrode are provided. In the electrode for a power storage device and the power storage device, a region including a metal element which functions as a catalyst is selectively provided over a current collector, and then, an active material layer is formed. By selectively providing the region including the metal element, a whisker can be effectively generated in the active material layer over the current collector, and the whisker generation region can be controlled. Accordingly, the discharge capacity can be increased and the cycle characteristics can be improved. | 12-15-2011 |
| 20110304920 | LASER IRRADIATION METHOD AND LASER IRRADIATION APPARATUS - The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens array without being affected by the intensity distribution of the original beam. A laser beam emitted from a laser oscillator is divided by two kinds of cylindrical lens arrays into a plurality of beams, which are two kinds of linear laser beams with their energy intensity distribution inverted each other, and the two kinds of linear laser beams are superposed in a minor-axis direction. This can form the linear laser beam having homogeneous intensity distribution on the irradiation surface. | 12-15-2011 |
| 20110304605 | Data Latch Circuit and Electronic Device - The data latch circuit of the invention includes a means for short-circuiting an input terminal and an output terminal of an inverter and by connecting the input terminal to one electrode of a capacitor and sampling a data signal or a reference potential to the other electrode of the capacitor, an accurate operation can be obtained without being influenced by variations in the TFT characteristics even when the amplitude of an input signal is small relatively to the width of a power supply voltage. | 12-15-2011 |
| 20110304525 | DISPLAY DEVICE AND ELECTRONIC DEVICE - It is an object of the present invention to provide a display device in which a reverse current sufficient enough to insulate a short-circuited point flows and a transistor using amorphous silicon is used is applied. The display device includes a switching transistor that controls an input of a video signal, a driving transistor that controls a current flowing in a forward direction to a light emitting element, and an AC transistor that controls a current flowing in a reverse direction to the light emitting element; and a reverse bias current can be applied to the light emitting element. Furthermore, the above-described transistors are N-channel transistors. | 12-15-2011 |
| 20110304311 | DC/DC CONVERTER, POWER SUPPLY CIRCUIT, AND SEMICONDUCTOR DEVICE - Provided is a DC-DC converter with improved power conversion efficiency. A transistor which is incorporated in the DC-DC converter and functions as a switching element for controlling output power includes, in its channel formation region, a semiconductor material having a wide band gap and significantly small off current compared with silicon. The transistor further comprises a back gate electrode, in addition to a general gate electrode, and a back gate control circuit for controlling a potential applied to the back gate electrode in accordance with the output power from the DC-DC converter. The control of the potential applied to the back gate electrode by the back gate control circuit enables the threshold voltage to decrease the on-state resistance when the output power is high and to increase the off-state current when the output power is low. | 12-15-2011 |
| 20110303953 | GAS SENSOR AND METHOD FOR MANUFACTURING THE GAS SENSOR - It is an object to provide a gas sensor which is formed by a simple manufacturing process. Another object is to provide a gas sensor whose manufacturing cost is reduced. A transistor which includes an oxide semiconductor layer in contact with a gas and which serves as a detector element of a gas sensor, and a transistor which includes an oxide semiconductor layer in contact with a film having a gas barrier property and which forms a detection circuit are formed over one substrate by the same process, whereby a gas sensor using these transistors may be formed. | 12-15-2011 |
| 20110303919 | DISPLAY DEVICE AND ELECTRONIC DEVICE HAVING THE DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THEREOF - To provide a display device including a thin film transistor in which high electric characteristics and reduction in off-current can be achieved. The display device having a thin film transistor includes a substrate, a gate electrode provided over the substrate, a gate insulating film provided over the gate electrode, a microcrystalline semiconductor film provided over the gate electrode with the gate insulating film interposed therebetween, a channel protection layer which is provided over and in contact with the microcrystalline semiconductor film, an amorphous semiconductor film provided over the gate insulating film and on a side surface of the microcrystalline semiconductor film and the channel protection layer, an impurity semiconductor layer provided over the amorphous semiconductor film, and a source electrode and a drain electrode provided over and in contact with the impurity semiconductor layer. The thickness of the amorphous semiconductor film is larger than that of the microcrystalline semiconductor film. | 12-15-2011 |
| 20110303914 | Semiconductor Device - One object is to provide a semiconductor device including an oxide semiconductor with improved electrical characteristics. The semiconductor device includes a first insulating film including an element of Group 13 and oxygen; an oxide semiconductor film partly in contact with the first insulating film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate electrode overlapping with the oxide semiconductor film; and a second insulating film partly in contact with the oxide semiconductor film, between the oxide semiconductor film and the gate electrode. Further, the first insulating film including an element of Group 13 and oxygen includes a region where an amount of oxygen is greater than that in a stoichiometric composition ratio. | 12-15-2011 |
| 20110303913 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object of an embodiment of the present invention is to manufacture a highly-reliable semiconductor device comprising a transistor including an oxide semiconductor, in which change of electrical characteristics is small. In the transistor including an oxide semiconductor, oxygen-excess silicon oxide (SiO | 12-15-2011 |
| 20110303911 | METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE - Oxidation treatment is performed to the surface of a substrate provided with a photocatalytic conductive film and an insulating film; treatment with a silane coupling agent is performed, so that a silane coupling agent film is formed and the surface of the substrate is modified to be liquid-repellent; and the surface of the substrate is irradiated with light of a wavelength (less than to equal to 390 nm) which has energy of greater than or equal to a band gap of a material for forming the photocatalytic conductive film, so that only the silane coupling agent film over the surface of the photocatalytic conductive film is decomposed and the surface of the photocatalytic conductive film can be modified to be lyophilic. | 12-15-2011 |
| 20110300690 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first. | 12-08-2011 |
| 20110300445 | POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A power storage device which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur, and a method for manufacturing the power storage device are provided. The power storage device includes a current collector, a mixed layer formed over the current collector, and a crystalline silicon layer which is formed over the mixed layer and functions as an active material layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions projecting over the crystalline silicon region. The whisker-like crystalline silicon region includes a protrusion having a bending or branching portion. | 12-08-2011 |
| 20110300441 | POWER STORAGE DEVICE - A power storage device including a positive electrode in which a positive electrode active material is formed over a positive electrode current collector and a negative electrode which faces the positive electrode with an electrolyte interposed therebetween is provided. The positive electrode active material includes a first region which includes a compound containing lithium and one or more of manganese, cobalt, and nickel; and a second region which covers the first region and includes a compound containing lithium and iron. Since a superficial portion of the positive electrode active material includes the second region containing iron, an energy barrier when lithium is inserted into and extracted from the surface of the positive electrode active material can be decreased. | 12-08-2011 |
| 20110299003 | DISPLAY DEVICE AND ELECTRONIC DEVICE - An object is to provide a display device in which a difference in load capacitance between wirings is reduced in the case where different signals are supplied to plural pixels at the same timing with use of plural wirings; thus, deviation in the grayscale and/or signal delay can be reduced. The display device includes first to N-th (N is a natural number of 3 or larger) data lines for supplying different video signals; and a pixel including a selection transistor connected to one of the first to N-th data lines. The first to N-th data lines intersect with each other so that one of the first to N-th data lines is provided closest to one terminal of the selection transistor and connected to the one terminal of the selection transistor. | 12-08-2011 |
| 20110298975 | CONTROL CIRCUIT OF DISPLAY DEVICE, AND DISPLAY DEVICE, AND DISPLAY DEVICE AND ELECTRONIC APPLIANCE INCORPORATING THE SAME - An object is to realize downsizing and cost reduction of a display device by efficiently using a physical region of a memory in a control circuit of the display device. A structure of a video data storage portion of the control circuit is that provided with a video data storage portion for storing video data of an n-th frame (n is a natural number), a video data storage portion for storing video data of an (n+1)th frame, and a video data storage portion for sharing video data of the n-th frame and the (n+1)th frame among received video data. | 12-08-2011 |
| 20110298396 | Light Emitting Device and Electronic Equipment Using the Same - A light emitting device is provided which is capable of displaying in desired colors stably by controlling a change in luminance of OLED when an organic light emitting layer is degraded or there is a change in temperature of the surroundings. A reference value for the amount of current flowing into a pixel portion is calculated from data of a video signal. Then, the pixel portion displays an image in accordance with the data of the video signal and the drive current at the time is measured for all of OLEDs in the pixel portion. The two voltage values supplied from a variable power supply to the pixel portion are corrected such that the measured drive current approaches the reference value. With the above structure, lowering of luminance which accompanies degradation of an organic light emitting layer is prevented and a clear image can be displayed as a result. | 12-08-2011 |
| 20110298362 | Display Device - A display device with high-definition, in which display unevenness due to a voltage drop in a wiring or display unevenness due to a variation in characteristics of TFTs are suppressed. The display device of the invention comprises a first wiring for transmitting a video signal and a second wiring for supplying a current to a light emitting element. The first wiring and the second wiring extend parallel to each other, and are formed so as to overlap with each other at least partly with an insulating layer interposed therebetween. | 12-08-2011 |
| 20110298082 | SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF DRIVING THE SAME - A transistor causes fluctuation in the threshold and mobility due to the factor such as fluctuation of the gate length, the gate width, and the gate insulating film thickness generated by the difference of the manufacturing steps and the substrate to be used. As a result, there is caused fluctuation in the current value supplied to the pixel due to the influence of the characteristic fluctuation of the transistor, resulting in generating streaks in the display image. A light emitting device is provided which reduces influence of characteristics of transistors in a current source circuit constituting a signal line driving circuit until the transistor characteristics do not affect the device and which can display a clear image with no irregularities. A signal line driving circuit of the present invention can prevent streaks in a displayed image and uneven luminance. Also, the present invention makes it possible to form elements of a pixel portion and driving circuit portion from polysilicon on the same substrate integrally. In this way, a display device with reduced size and current consumption is provided as well as electronic equipment using the display device. | 12-08-2011 |
| 20110298057 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device having a novel structure with a high degree of integration. A semiconductor device includes a semiconductor layer having a channel formation region, a source electrode and a drain electrode electrically connected to the channel formation region, a gate electrode overlapping with the channel formation region, and a gate insulating layer between the channel formation region and the gate electrode. A portion of a side surface of the semiconductor layer having the channel formation region and a portion of a side surface of the source electrode or the drain electrode are substantially aligned with each other when seen from a planar direction. | 12-08-2011 |
| 20110298027 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of writings. A semiconductor device includes a second transistor and a capacitor provided over a first transistor. A source electrode of the second transistor which is in contact with a gate electrode of the first transistor is formed using a material having etching selectivity with respect to the gate electrode. By forming the source electrode of the second transistor using a material having etching selectivity with respect to the gate electrode of the first transistor, a margin in layout can be reduced, so that the degree of integration of the semiconductor device can be increased. | 12-08-2011 |
| 20110297940 | MICROMACHINE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including polycrystalline silicon is also used for a structure layer such as a movable electrode of a structure body. Therefore, the structure body and the electric circuit for controlling the structure body can be formed over one substrate. As a result, a micromachine can be miniaturized. Further, assembly and packaging are unnecessary, so that manufacturing cost can be reduced. | 12-08-2011 |
| 20110297939 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device having a novel structure with a high degree of integration. A semiconductor device includes a semiconductor layer having a channel formation region, a source electrode and a drain electrode electrically connected to the channel formation region, a gate electrode overlapping with the channel formation region, and a gate insulating layer between the channel formation region and the gate electrode. A portion of a side surface of the gate insulating layer and a portion of a side surface of the source electrode or the drain electrode are substantially aligned with each other when seen from a planar direction. | 12-08-2011 |
| 20110297928 | SEMICONDUCTOR DEVICE - The semiconductor device is provided in which a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is arranged in matrix and a wiring (also referred to as a bit line) for connecting one of the memory cells and another one of the memory cells and a source or drain region in the first transistor are electrically connected through a conductive layer and a source or drain electrode in the second transistor provided therebetween. With this structure, the number of wirings can be reduced in comparison with a structure in which the source or drain electrode in the first transistor and the source or drain electrode in the second transistor are connected to different wirings. Thus, the integration degree of a semiconductor device can be increased. | 12-08-2011 |
| 20110294266 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - Formation of LDD structures and GOLD structures in a semiconductor device is conventionally performed in a self aligning manner with gate electrodes as masks, but there are many cases in which the gate electrodes have two layer structures, and film formation processes and etching processes become complex. Further, in order to perform formation of LDD structures and GOLD structures only by processes such as dry etching, the transistor structures all have the same structure, and it is difficult to form LDD structures, GOLD structures, and single drain structures separately for different circuits. By applying a photolithography process for forming gate electrodes to photomasks or reticles, in which supplemental patterns having a function of reducing, the intensity of light and composed of diffraction grating patterns or translucent films, are established, GOLD structure, LDD structure, and single drain structure transistors can be easily manufactured for different circuits through dry etching and ion injection process steps. | 12-01-2011 |
| 20110294011 | ENERGY STORAGE DEVICE AND MANUFACTURING METHOD THEREOF - An energy storage device is provided in which a discharge capacity can be high and/or in which degradation of an electrode due to repetitive charge and discharge can be reduced. An electrode of the energy storage device which includes a crystalline silicon layer serving as an active material layer is provided. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region having a plurality of protrusions projected upward from the crystalline silicon region. The protrusions include a first protrusion and a second protrusion; the second protrusion has a larger length along the axis and a sharper tip than the first protrusion. | 12-01-2011 |
| 20110294010 | POWER STORAGE DEVICE AND MANUFACTURING METHOD THEREOF - It is an object to perform insertion and extraction of lithium ions effectively at a positive electrode of a power storage device so as to increase the reaction speed. Further, it is an object to increase the capacitance per unit volume of an active material of a positive electrode. A layer containing carbon and an active material layer are stacked at a positive electrode, whereby insertion and extraction of lithium ions are effectively performed at the positive electrode and reaction speed can be increased, even when the thickness of the positive electrode is increased. The active material layer interposed between the layers each containing carbon includes particulate crystals and therefore has high density, so that the active material can have large capacitance per unit volume. | 12-01-2011 |
