| Seimi Chemical Co., Ltd. Patent applications |
| Patent application number | Title | Published |
|---|
| 20110008965 | POLISHING COMPOSITION AND POLISHING METHOD - To provide a polishing composition which has a high removal rate and enables to suppress occurrence of dishing and erosion, in polishing of a surface to be polished in the production of a semiconductor integrated circuit device. A chemical mechanical polishing composition for polishing a surface to be polished of a semiconductor integrated circuit device comprises (A) fine oxide particles, (B) pullulan, and (C) water. The polishing composition further contains (D) an oxidizing agent, and (E) a compound represented by the formula 1: | 01-13-2011 |
| 20100323522 | Polishing composition and polishing method - To provide a polishing composition which has a high removal rate and enables to suppress occurrence of dishing and erosion, in polishing of a surface to be polished in the production of a semiconductor integrated circuit device. A chemical mechanical polishing composition for polishing a surface to be polished of a semiconductor integrated circuit device comprises (A) fine oxide particles, (B) pullulan, and (C) water. The polishing composition further contains (D) an oxidizing agent, and (E) a compound represented by the formula 1: | 12-23-2010 |
| 20100294985 | POSITIVE ELECTRODE ACTIVE SUBSTANCE FOR LITHIUM SECONDARY BATTERY AND PROCESS FOR PRODUCING THE SAME - A positive electrode active material for a lithium secondary battery containing a lithium-cobalt composite oxide, which has a large volume capacity density, has a high safety and is excellent in charge and discharge cyclic durability, and its production process, are provided. | 11-25-2010 |
| 20100055909 | SEMICONDUCTOR POLISHING COMPOUND, PROCESS FOR ITS PRODUCTION AND POLISHING METHOD - A semiconductor polishing compound comprising cerium oxide abrasive grains, water and an additive, wherein the additive is a water-soluble organic polymer such as ammonium polyacrylate or an anionic surfactant, the pH at 25° C. is from 3.5 to 6, and the concentration of the additive is from 0.01 to 0.5% based on the total mass of the polishing compound. This polishing compound simultaneously has dispersion stability, excellent scratch characteristics and excellent polishing planarization characteristics. In particular, this polishing compound provides excellent planarization characteristics having dishing fluctuation reduced, when used for polishing a semiconductor substrate having a silicon nitride film | 03-04-2010 |
| 20100009540 | POLISHING COMPOUND, ITS PRODUCTION PROCESS AND POLISHING METHOD - A polishing compound for chemical mechanical polishing of a substrate, which comprises (A) abrasive grains, (B) an aqueous medium, (C) tartaric acid, (D) trishydroxymethylaminomethane and (E) at least one member selected from the group consisting of malonic acid and maleic acid, and more preferably, which further contains a compound having a function to form a protective film on the wiring metal surface to prevent dishing at the wiring metal portion, such as benzotriazole. By use of this polishing compound, the copper wirings on the surface of a semiconductor integrated circuit board can be polished at a high removal rate while suppressing formation of scars as defects in a polishing step. Particularly in a first polishing step of polishing copper wirings having a film made of tantalum or a tantalum compound as a barrier film, excellent selectivity will be obtained, dishing and erosion due to polishing are less likely to occur, and an extremely high precision flat surface of a semiconductor integrated circuit board can be obtained. | 01-14-2010 |
| 20090017383 | POSITIVE ELECTRODE ACTIVE SUBSTANCE FOR LITHIUM SECONDARY BATTERY AND PROCESS FOR PRODUCING THE SAME - A positive electrode active material for a lithium secondary battery containing a lithium-cobalt composite oxide, which has a large volume capacity density, has a high safety and is excellent in charge and discharge cyclic durability, and its production process, are provided. | 01-15-2009 |
| 20080241053 | Lithium-nickel-cobalt-manganese containing composite oxide - Coagulated particles of nickel-cobalt-manganese hydroxide wherein primary particles are coagulated to form secondary particles are synthesized by allowing an aqueous solution of a nickel-cobalt-manganese salt, an aqueous solution of an alkali-metal hydroxide, and an ammonium-ion donor to react under specific conditions; and a lithium-nickel-cobalt-manganese-containing composite oxide represented by a general formula, Li | 10-02-2008 |
