SEIKO EPSON COPORATION Patent applications |
Patent application number | Title | Published |
20140240509 | SHORT LIGHT PULSE GENERATION DEVICE, TERAHERTZ WAVE GENERATION DEVICE, CAMERA, IMAGING DEVICE, AND MEASUREMENT DEVICE - A short light pulse generation device includes: a light pulse generation portion that has a quantum well structure and generates a light pulse; a frequency chirping portion that has a quantum well structure and chirps a frequency of the light pulse; a light branching portion that branches a chirped light pulse; and a group velocity dispersion portion that has a plurality of optical waveguides, on which each of a plurality of the light pulses branched in the light branching portion is incident, and produces a group velocity difference depending on a wavelength with respect to a plurality of branched light pulses, wherein light path lengths of the light pulses in a plurality of light paths before the light pulse is branched in the light branching portion and then incident on the plurality of optical waveguides of the group velocity dispersion portion are equal to each other. | 08-28-2014 |
20120127248 | INKJET RECORDING METHOD - An inkjet recording method using a clear ink composition includes processes of applying the clear ink composition and of heating the applied clear ink composition, wherein the clear ink composition contains an amino group-containing resin, water, a sparingly water soluble alkanediol, and a wetting agent which is solid at 20° C. and 60% relative humidity. | 05-24-2012 |
20090244201 | METHOD OF MANUFACTURING LIQUID JET HEAD, A METHOD OF MANUFACTURING A PIEZOELECTRIC ELEMENT AND A LIQUID JET APPARATUS - In a method of manufacturing a piezoelectric element which includes a first electrode, a piezoelectric layer including a plurality of piezoelectric films, and a second electrode formed opposite a surface of the piezoelectric layer, a step of forming the first electrode metal layer includes forming the first electrode metal layer so as to include one or more iridium layer and permit the iridium layer to have the total thickness in the range from 2 to 5 nm to form the first electrode metal layer; and forming the first electrode film by heating the piezoelectric film at a temperature in the range from 400 to 650° C. for 30 minutes or more after the first piezoelectric film is formed in the step of forming the piezoelectric layer to oxidize the iridium contained in the first electrode metal layer. | 10-01-2009 |