SCHMID SILICON TECHNOLOGY GMBH Patent applications |
Patent application number | Title | Published |
20130206056 | METHODS OF PRODUCING CRYSTALLINE SEMICONDUCTOR MATERIALS - A method of producing a crystalline semiconductor material includes feeding particles of the semiconductor material and/or a precursor compound of the semiconductor material into a gas flow, wherein the gas flow has a sufficiently high temperature to convert the particles of the semiconductor material from a solid into a liquid and/or gaseous state and/or to thermally decompose the precursor compound, condensing out and/or separating the liquid semiconductor material from the gas flow, and converting the liquid semiconductor material to a solid state with formation of mono- or polycrystalline crystal properties. | 08-15-2013 |
20130199440 | MONOCRYSTALLINE SEMICONDUCTOR MATERIALS - A method of producing a monocrystalline semiconductor material includes providing a starting material composed of the semiconductor material, transferring the starting material into a heating zone in which a melt composed of the semiconductor material is fed with the starting material, and lowering the melt from the heating zone and/or raising the heating zone such that, at a lower end portion of the melt, a solidification front forms along which the semiconductor material crystallizes in a desired structure, wherein the starting material composed of the semiconductor material is provided in liquid form and fed into the melt in liquid form. | 08-08-2013 |
20130064751 | METHOD FOR PRODUCING HIGH PURITY SILICON - A process of producing high-purity silicon includes providing silicon-containing powder, feeding the silicon-containing powder into a gas stream, where the gas has a temperature sufficiently high to convert particles of metallic silicon from a solid state into a liquid and/or gaseous state, collecting and, optionally, condensing the liquid and/or gaseous silicon formed, and cooling the collected liquid and/or condensed silicon in a casting mold, | 03-14-2013 |
20120201728 | METHOD AND SYSTEM FOR PRODUCING MONOSILANE - A plant for preparing monosilane (SiH | 08-09-2012 |
20120189526 | PROCESS AND PLANT FOR PREPARING TRICHLOROSILANE - A process for preparing trichlorosilane includes reacting silicon particles with tetrachlorosilane and hydrogen and optionally with hydrogen chloride in a fluidized-bed reactor to form a trichlorosilane-containing product gas stream, where the trichlorosilane-containing product gas stream is discharged from the reactor via an outlet preceded by at least one particle separator which selectively allows only silicon particles up to a particular maximum size to pass through and silicon particles are discharged from the reactor at preferably regular intervals or continuously via at least one further outlet without such a particle separator. | 07-26-2012 |
20120183465 | PLANT AND PROCESS FOR PREPARING MONOSILANE - A plant and a process prepare monosilane (SiH | 07-19-2012 |
20120003141 | PROCESS AND APPARATUSES FOR PREPARING ULTRAPURE SILICON - A process for preparing high-purity silicon by thermal decomposition of a silicon compound includes decomposing the silicon compound by mixing with a carrier gas at a temperature at which the silicon compound is thermally decomposed. | 01-05-2012 |
20110305604 | REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON USING THE MONOSILANE PROCESS - A reactor that produces polycrystalline silicon using a monosilane process includes a reactor base plate having a multiplicity of nozzles formed therein through which a silicon-containing gas flows, a plurality of filament rods mounted on the reactor base plate, and a gas outlet opening located at a selected distance from the nozzles to feed used monosilane to an enrichment and/or treatment stage, wherein the gas outlet opening is formed at a free end of an inner tube, the inner tube is conducted through the reactor base plate, and the inner tube has an outer wall and an inner wall and thus forms an intermediate space in which at least one cooling water circuit is conducted. | 12-15-2011 |
20110262338 | METHOD AND SYSTEM FOR THE PRODUCTION OF PURE SILICON - A process for producing high-purity silicon includes (1) preparing trichlorosilane by reacting silicon with hydrogen chloride in at least one hydrochlorination process; (2) preparing monosilane by disproportionation of the trichlorosilane to provide a monosilane-containing reaction mixture containing silicon tetrachloride as a by-product; (3) in parallel to (1), reacting silicon tetrachloride obtained as the by-product in (2) with silicon and hydrogen in at least one converting process to produce a trichlorosilane-containing reaction mixture; and (4) thermally decomposing the monosilane into silicon and hydrogen. | 10-27-2011 |