| Sanken Electric Co., Ltd. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120132962 | Method of Manufacturing Semiconductor Device and Semiconductor Device - A method of manufacturing a semiconductor device, in which a second semiconductor layer of Al | 05-31-2012 |
| 20120126287 | COMPOUND SEMICONDUCTOR DEVICE HAVING INSULATION FILM WITH DIFFERENT FILM THICKNESSES BENEATH ELECTRODES - A compound semiconductor device includes a group-III nitride semiconductor layer; an insulation film located on the group-III nitride semiconductor layer; a drain electrode located in a position which is a first distance away from an upper surface of the group-III nitride semiconductor layer; a source electrode located in a position which is the first distance away from the upper surface of the group-III nitride semiconductor layer; a gate electrode located between the drain electrode and the source electrode; and a field plate electrode located between the drain electrode and the gate electrode at a position which is a second distance away from the upper surface of the group-III nitride semiconductor layer, the second distance is shorter than the first distance. | 05-24-2012 |
| 20120126284 | SEMICONDUCTOR DEVICE - A semiconductor device ( | 05-24-2012 |
| 20120119319 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a first semiconductor region and a second semiconductor region provided on a main surface of a substrate, being apart from each other and having first conductivity; a third semiconductor region provided between the first semiconductor region and the second semiconductor region and having second conductivity opposite to the first conductivity; a fourth semiconductor region provided on a main surface of the substrate, connected to the third semiconductor region, manufactured together with the third semiconductor region in the same manufacturing process, and having the conductivity same as that of the third semiconductor region; and trenches made on the main surface of the fourth semiconductor region and having a depth smaller than a junction depth of the fourth semiconductor region. | 05-17-2012 |
| 20120102492 | POWER SUPPLY AND CONTROL METHOD THEREOF - A power supply for feeding power to a computer comprises an instruction acquisition unit configured to acquire an identifier of a virtual machine and an instruction for the virtual machine, the virtual machine being run in emulation by a virtual host executed on the computer; and a virtual machine management unit configured to input an operation instruction for the virtual machine to the virtual machine on the basis of the acquisition by the instruction acquisition unit. | 04-26-2012 |
| 20120092910 | SWITCHING POWER SUPPLY APPARATUS - A switching power supply is provided to supply an AC input voltage. The supply includes a control circuit configured to detect a voltage of the AC power source in a voltage waveform, and switch elements in a synchronous rectification switching mode in synchronization with polarities of the voltage waveform when the AC input voltage is equal to or greater than a predetermined voltage value. The control unit also operates the switching without synchronization with the polarities when the AC input voltage is smaller than the predetermined voltage value. | 04-19-2012 |
| 20120091508 | COMPOUND SEMICONDUCTOR DEVICE - A compound semiconductor device includes: a compound semiconductor layer; a source electrode; a drain electrode; a gate electrode; a field plate; and a low-conductivity region. The low-conductivity region is arranged within a region immediately below the field plate in a region where the two-dimensional carrier gas layer is formed, and has lower conductivity than a region above which the field plate or the gate electrode is not arranged in the region where the two-dimensional carrier gas layer is formed. | 04-19-2012 |
| 20120080724 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a two-dimensional carrier gas layer, a first main electrode, a second main electrode, a first gate electrode, and a second gate electrode. The first gate electrode is provided between a part of the first main electrode and a part of the second main electrode opposite to the part of the first main electrode. The second gate electrode is provided between another part of the first main electrode and another part of the second main electrode opposite to the another part of the first main electrode with a separation region interposed between the first gate electrode and the second gate electrode. The second gate electrode is controlled independently of the first gate electrode. | 04-05-2012 |
| 20120075890 | GATE DRIVER AND SWITCHING POWER SOURCE APPARATUS - A gate driver of a switching element includes a first capacitor having a first end connected to a DC power source, a first switch having a first electrode connected to the first end of the first capacitor and a second electrode connected to a negative electrode of the DC power source, a second switch having a third electrode connected to the second electrode and the negative electrode of the DC power source and a fourth electrode connected to the first capacitor, a second capacitor connected in parallel with the third and fourth electrodes of the second switch and having a first end connected to the DC power source, and a negative voltage controller connecting the gate of the switching element to the second end of the first capacitor and a second end of the second capacitor when the switching element is turned off. | 03-29-2012 |
| 20120074922 | CURRENT SENSING CIRCUIT - A current sensing circuit can prevent operation error due to a rush current and/or a shifted sense ratio. The circuit includes a power MOSFET, a series combination of a sense resistor and a sense MOSFET, which are connected in parallel to the power MOSFET Qph, a delay circuit for delaying the edges of drive signal, by first delay time, a delay circuit for delaying the edges of the drive signal by a second delay time, logic for combining signals and a current sensing circuit for sensing an electric current of the sense MOSFET based on an electric current of the sense resistor. | 03-29-2012 |
| 20120063141 | LIGHTING DEVICE - A lighting device is provided to include a plurality of lens bodies. The connecting portion connecting the plurality of lens bodies includes a first major surface and a second major surface opposite to the first major surface. The first major surface is in contact with the lateral portion at a first contact under an outer edge of the leading lens. The second major surface is in contact with the lateral portion at a second contact located below the first contact. The first contact is located outside of a point of intersection along the first major surface with respect to the center of each lens body, the point of intersection at which an extraction of the first major surface intersects with an extension of a ray of the emitted light which is incident on the light incident surface and is projected on the second contact. | 03-15-2012 |
| 20120043949 | SWITCHING POWER SOURCE APPARATUS - A switching power source apparatus includes a high-side MOSFET | 02-23-2012 |
| 20120043588 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer; a second semiconductor layer; a two-dimensional carrier gas layer; a source electrode; a drain electrode; a gate electrode; and an auxiliary electrode located above the two-dimensional carrier gas layer between the gate electrode and the drain electrode. Channel resistance of the two-dimensional carrier gas layer between the gate electrode and the auxiliary electrode is set higher than channel resistance of the two-dimensional carrier gas layer between the gate electrode and the source electrode. | 02-23-2012 |
| 20120036383 | POWER SUPPLY FOR NETWORKED HOST COMPUTERS AND CONTROL METHOD THEREOF - A power supply is used in combination with networked first and second hosts with a virtual machine implemented on the first host. The power supply is comprised of: a memory; an outlet part linked with outlets respectively supplying electricity to the hosts; a communication interface linked with the hosts; a controller linked with the memory, the outlet part and the communication interface; a migration process located on the memory, wherein the migration process causes the communication interface to send a migration instruction to the first host, the migration instruction causing migration of the virtual machine to the second host; and a shut-down process located on the memory, wherein the shut-down process causes the communication interface to send a shut-down instruction to the first host, the shut-down instruction causing shut-down of the first host. | 02-09-2012 |
| 20120034768 | METHOD OF MANUFACTURING SEMICONDUCTOR WAFER - A method of manufacturing a semiconductor wafer, which includes: a semiconductor substrate made of silicon and having both a central area and an outer periphery area; and a compound semiconductor layer made of a nitride-based semiconductor and formed on the semiconductor substrate, the method comprising: forming a growth inhibition layer to inhibit the compound semiconductor layer from growing on a tapered part provided in the outer periphery area of the semiconductor substrate; and growing the compound semiconductor layer on at least the central area of the semiconductor substrate, after the growth inhibition layer has been formed. | 02-09-2012 |
| 20120033451 | CONVERTER - A converter includes a rectifying circuit of an AC voltage of an AC power source into a rectified voltage, an input smoothing capacitor Ci, a first series circuit connected to the input smoothing capacitor and including a first and a second switching elements, a second series circuit connected to a connection point of the first and second switching elements and a first end of the input smoothing capacitor and including a primary winding of a transformer and a first capacitor Cri, a controller to alternately turn on/off the first and second switching elements, a rectifying-smoothing circuit (D | 02-09-2012 |
| 20120032661 | SWITCHING POWER SOURCE APPARATUS - A switching power source apparatus includes a high-side MOSFET | 02-09-2012 |
| 20120032660 | SWITCHING POWER SOURCE APPARATUS - A switching power source apparatus includes a high-side MOSFET | 02-09-2012 |
| 20120032232 | SEMICONDUCTOR DEVICE - A semiconductor device protects against concentration of electric current at a front end portion of one of the electrodes thereof The semiconductor device includes a substrate, a compound semiconductor layer formed on the substrate and having a channel layer based on a hetero junction, a first main electrode formed on the compound semiconductor layer, a second main electrode formed on the compound semiconductor surrounding the first main electrode and having a linear region and an arc-shaped region, a control electrode formed on the compound semiconductor layer and disposed opposite to the first main electrode and the second main electrode, an electric current being made to flow between the first main electrode and the second main electrode, and an electric current limiting section formed between the first main electrode and the arc-shaped region of the second main electrode. | 02-09-2012 |
| 20120025725 | POWER CONVERTER - The present invention includes a first DC converter converting AC voltage, into DC voltage while correcting a power factor, and a second DC converter electrically isolating the first DC converter from an LED group load, and converting the DC voltage, into a predetermined DC voltage and supply the resultant voltage to the LED group load. The second DC converter includes a current detection circuit disposed on the secondary side, and detecting current flowing into the LED group load, an error amplifier amplifying an error between a detected current value detected and a reference current value, a signal transmission isolation element transmitting a control signal based on an output signal from the error amplifier, to the primary side, and a switching element transferring power to the secondary side through the transformer by being turned on/off according to the control signal. | 02-02-2012 |
| 20120014145 | STARTUP CIRCUIT - A startup circuit is installed in a switching power source apparatus. The startup circuit is configured to start up a controller with the use of a rectified voltage at startup of an AC power source and includes a detector (ZD | 01-19-2012 |
| 20120001226 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor device 10 includes forming a plurality of second conductive second semiconductor regions at specific intervals on one main surface of a first conductive first semiconductor region, the plurality of second conductive second semiconductor regions being opposite to the first conductive first semiconductor region, forming a plurality of the first conductive third semiconductor regions on a main surface of the second semiconductor region, the plurality of the first conductive third regions being separated from each other, forming a plurality of holes at specific intervals on an another main surface which faces the one main surface of the first semiconductor region, the plurality of holes being separated from each other, forming a pair of adjacent second conductive fourth semiconductor regions which are alternately connected at a bottom part of the hole within the first semiconductor region, and burying an electrode within the hole. | 01-05-2012 |
| 20110309682 | SWITCHING POWER SUPPLY CIRCUIT - The present invention includes: a first series circuit which is connected between one end and the other end of a DC power supply, and in which a reactor, a first diode, and a first capacitor are connected in series; a first switching element connected between the one end of the DC power supply and a connection point between the reactor and the first diode; a second series circuit which is connected to the first diode in parallel, and in which a second switching element and a second capacitor are connected in series; and a control circuit configured to control the on and off of the second switching element in order that turn on of the first switching element becomes to zero-voltage switching. | 12-22-2011 |
| 20110304309 | SWITCHING POWER SOURCE APPARATUS - A switching power source apparatus includes a high-side MOSFET | 12-15-2011 |
| 20110301406 | ILLUMINATING APPARATUS AND CONTROL METHOD THEREOF - An illuminating apparatus | 12-08-2011 |
| 20110299310 | SYNCHRONOUS OPERATING SYSTEM FOR DISCHARGE TUBE LIGHTING APPARATUSES, DISCHARGE TUBE LIGHTING APPARATUS, AND SEMICONDUCTOR INTEGRATED CIRCUIT - A synchronous operating system for operating a plurality of discharge tube lighting apparatuses at the same frequency and same phase includes (1) an oscillator of a triangular wave signal whose inclination for charging a capacitor C | 12-08-2011 |
| 20110299277 | ILLUMINATING APPARATUS AND METHOD OF CONTROLLING ILLUMINATING APPARATUS - An illuminating apparatus | 12-08-2011 |
| 20110285447 | DRIVE CIRCUIT - A drive circuit includes a transformer T | 11-24-2011 |
| 20110285307 | LED LIGHTING APPARATUS - An LED lighting apparatus includes a triac dimmer | 11-24-2011 |
| 20110284721 | ORGANIC ELECTROLUMINESCENCE ILLUMINATION DEVICE - An organic electroluminescence illumination device including: an organic electroluminescence panel including: a transparent substrate; a transparent electrode formed on the transparent substrate; an organic light emitting layer formed on the transparent electrode; and a metal electrode formed on the organic light emitting layer, wherein the organic light emitting layer comprises: an illumination area that is formed as a main light emitting area of the organic electroluminescence illumination device; a reference area, which is electrically-insulated from the illumination area; and a light receiving area, which is electrically-insulated from the illumination area and the reference area; and an organic light emitting layer driving part that drives individually the illumination area and the reference area, wherein the organic light emitting layer driving part detects current flowing in the light receiving area. | 11-24-2011 |
| 20110273913 | DC-DC CONVERTER - The present invention includes: a main switch Tr | 11-10-2011 |
| 20110265708 | METHOD OF HETEROEPITAXY - Epitaxy is carried out by immersing a single crystal substrate having a first principal surface, a second principal surface and a dislocation exposed on the first principal surface into an electrolytic solution including a cation of a metal having a melting point; carrying out electrolytic plating on the first principal surface to deposit the metal on the dislocation so as to cover the dislocation with the metal but leave a portion of the first principal surface where the dislocation is exposed uncovered with the metal; and causing epitaxy of a semiconductor layer on both the portion of the first principal surface and the metal covering the dislocation at a temperature below the melting point. | 11-03-2011 |
| 20110260777 | MONOLITHIC INTEGRATED CIRCUIT - A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate. | 10-27-2011 |
| 20110254056 | SEMICONDUCTOR DEVICE HAVING TRANSISTOR AND RECTIFIER - A semiconductor device having a transistor and a rectifier includes: a current path; a first main electrode having a rectifying function and arranged on one end of the current path; a second main electrode arranged on the other end of the current path; an auxiliary electrode arranged in a region of the current path between the first main electrode and the second main electrode; a third main electrode arranged on the one end of the current path apart from the first main electrode along a direction intersecting the current path; and a control electrode arranged in a region of the current path between the second main electrode and the third main electrode. The transistor includes the current path, the second main electrode, the third main electrode, and the control electrode. The rectifier includes the current path, the first main electrode, the second main electrode, and the auxiliary electrode. | 10-20-2011 |
| 20110248638 | LED DRIVING APPARATUS - An LED driving apparatus comprises a power supply unit that includes a transformer having a primary coil and a plurality of secondary coils and outputs alternating power from the plurality of secondary coils; a current balancing unit and a first rectification smoothing unit connected to a first secondary coil of the plurality of secondary coils; an LED load group that includes a plurality of LEDs connected in series and to which power smoothed from the first rectification smoothing unit is supplied; a power control unit that controls power to be supplied to the first and second LED loads, based on currents flowing in the first and second LED loads; and a direct current load that is connected to both ends of a second secondary coil of the plurality of secondary coils. The power supplying unit controls the alternating power, based on the power supplied to the direct current load. | 10-13-2011 |
| 20110235383 | FREQUENCY SYNCHRONIZING METHOD FOR DISCHARGE TUBE LIGHTING APPARATUS, DISCHARGE TUBE LIGHTING APPARATUS, AND SEMICONDUCTOR INTEGRATED CIRCUIT - An oscillator generates a triangular wave signal whose inclination for charging a capacitor and inclination for discharging the same are the same and which is used to turn on/off FETs Qp | 09-29-2011 |
| 20110233758 | SEMICONDUCTOR DEVICE - A semiconductor devices includes a first die pad having the conductivity connected to one end of a DC power source, a second die pad having the conductivity connected to the other end of the DC power source, a first switching element provided on the first die pad, receiving DC power from the DC power source via the first die pad, and having a terminal opposite to the first die pad connected to a first output terminal, and a second switching element provided on the second die pad, receiving the DC power from the DC power source via the second die pad, and connected to the first output terminal, and having a terminal opposite to the second die pad. | 09-29-2011 |
| 20110233538 | COMPOUND SEMICONDUCTOR DEVICE - A compound semiconductor device includes a compound semiconductor layer in which a two-dimensional carrier gas layer is formed, the compound semiconductor layer including a carrier travel layer and a carrier supply layer; first and second main electrodes, which are arranged apart from each other on the compound semiconductor layer, and are ohmically connected to the two-dimensional carrier gas layer; a metal oxide semiconductor film arranged on the compound semiconductor layer between the first main electrode and the second main electrode; and a control electrode arranged on the metal oxide semiconductor film, the control electrode including a titanium film that contacts the metal oxide semiconductor film or a titanium-containing compound film that contacts the metal oxide semiconductor film. | 09-29-2011 |
| 20110227640 | POWER SUPPLY DEVICE - In a power supplying system that includes a plurality of power supply devices, each of which has a backflow prevention circuit at an output side thereof, and supplies power to a load device, a backflow prevention circuit is configured by using a hetero-junction FET (HEMT). A normally-on type GaNFET is used for the hetero-junction FET (HEMT), so that the backflow prevention circuit is further simplified. | 09-22-2011 |
| 20110227630 | SWITCHING DEVICE FOR ELECTRIC CIRCUIT - A switching device has a main IGFET having a Schottky barrier diode D | 09-22-2011 |
| 20110215840 | GATE DRIVE CIRCUIT - A switch device comprised of a wide band gap semiconductor is provided. The switch device comprises a drain, a source, a gate and a gate voltage clamp circuit, which is connected between a signal terminal, to which a signal for driving the gate is input, and the gate through a series circuit of a capacitor and a resistance, and which comprises a diode and a voltage limiter circuit provided between the drain and the gate. | 09-08-2011 |
| 20110204488 | SEMICONDUCTOR WAFER AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes preparing a semiconductor wafer including a silicon substrate and a laminate having a compound semiconductor layer; etching and removing a part of the laminate in a thickness direction to form trench regions in a grid, each trench region including a plurality of stripe grooves extending in parallel to each other; filling the groove with a material having a lower hardness than the compound semiconductor layer to form a buried region; and dividing the semiconductor wafer into a plurality of chips by dicing using a blade at a dicing line which is defined within the trench region and includes a plurality of the buried regions. | 08-25-2011 |
| 20110204417 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor device according to the present invention including: a substrate; a compound semiconductor layer formed on the substrate; an element forming area provided in the compound semiconductor layer; and at least one semiconductor element, which includes a first main electrode and a main second electrode, wherein the at least one semiconductor element is formed in the element forming area, wherein the compound semiconductor layer includes: a first compound growth layer, which is formed on the substrate and includes the element forming area; and a second compound growth layer formed on the substrate to surround the element forming area when viewed from a plane, wherein the second compound growth layer has a crystallinity lower than a crystallinity of the first compound growth layer | 08-25-2011 |
| 20110204379 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor device including: a substrate; a nitride semiconductor layer formed on the substrate and having a heterojunction interface; and a recess portion formed on the nitride semiconductor layer, wherein the nitride semiconductor layer includes: a carrier transit layer, which has a composition represented by the formula: Al | 08-25-2011 |
| 20110194313 | ACTIVE SNUBBER CIRCUIT AND POWER SUPPLY CIRCUIT - An active snubber circuit for a switching power supply, in which a main switching element repeatedly operates an on-off operation so that current intermittently flows in a primary coil, has a capacitor for surge voltage absorption, a sub-switching element and a sub-control circuit controlling the sub-switching element. A circuit in which the capacitor for surge voltage absorption and the sub-switching element are connected in series is connected in parallel with the primary coil, and the sub-control circuit turns on the sub-switching element for a predetermined time period just after the main switching element is off. | 08-11-2011 |
| 20110188266 | SEMICONDUCTOR LIGHT EMITTING DEVICE, COMPOSITE LIGHT EMITTING DEVICE WITH ARRANGEMENT OF SEMICONDUCTOR LIGHT EMITTING DEVICES, AND PLANAR LIGHT SOURCE USING COMPOSITE LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a recess portion defined by a pair of opposing first side wall portions and a pair of opposing second side wall portions extending between the first side wall portions and shorter than the first side wall portions. Light emitting elements are arranged on the bottom surface of the recess portion in a direction of the first side wall portions. The light emitting elements include a first light emitting element for emitting light of a first color and a second light emitting element for emitting light of a second color different from the first color and placed closest to the second side wall portion among the light emitting elements. A resin portion containing a phosphor for wavelength-converting a part of the light of the second color into a complementary color of the light of the second color is filled into the recess portion. | 08-04-2011 |
| 20110176249 | SWITCHING APPARATUS AND CONTROLLING METHOD THEREOF - A switching apparatus includes a DC voltage output unit, a switching element to supply the DC voltage to a load, a power detection unit to detect power supplied from the switching element to the load, a drive unit to control the switching element in PWM manner according to an output from the power detection unit, and a stop unit to stop the PWM control if a value of the DC voltage is lower than a first threshold value. The first threshold value is lower than a minimum operation voltage value of the power detection unit. | 07-21-2011 |
| 20110157948 | CURRENT SOURCE INVERTER - A current source inverter includes an inverter having arm units and AC terminals, the numbers of the arm units and AC terminals being adapted to an AC load connected to the AC terminals. An upper arm is connected between a positive DC terminal and the corresponding AC terminal and has an upper arm switch Q | 06-30-2011 |
| 20110157938 | ALTERNATING CURRENT-DIRECT CURRENT CONVERTER DEVICE - In the present invention, switching circuits connected in middle points of power supply lines of a three-phase alternating-current power supply are switched to cause currents to intermittently flow on primary windings of a transformer, a voltage generated on a secondary winding is rectified and smoothed, and then is outputted to a load. The switching circuits each include: a series circuit including a first primary winding, a bidirectional switch and a second primary winding, which are connected in series in this order; a drive circuit power supply generating circuit generating a direct-current positive voltage and a direct-current negative voltage by use of an alternating-current power supply voltage applied between two ends of the series circuit; and a drive circuit performing on-off drive of the bidirectional switch. A reference potential point of the bidirectional switch is connected to a reference potential point of the drive circuit power supply generating circuit. | 06-30-2011 |
| 20110157931 | RESONANT POWER CONVERTER - The present invention provides a resonant power converter including: a first switch circuit in which multiple normally-off switches Q | 06-30-2011 |
| 20110156795 | BIDIRECTIONAL SWITCH - A bidirectional switch includes a semiconductor switch Q | 06-30-2011 |
| 20110140174 | COMPOUND SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - A compound semiconductor device is comprised of: a compound semiconductor layer including a first active layer and a second active layer forming a hetero junction with the first active layer so as to naturally generate a two-dimensional carrier gas channel in the first active layer along the hetero junction; a first electrode formed on the second active layer; a second electrode in ohmic contact with the first active layer and isolated from the first electrode; and a channel modifier for locally changing a part of the first active layer under the channel modifier into a normally-off state, the channel modifier being formed on the second active layer so as to enclose but be isolated from the first electrode and the second electrode. | 06-16-2011 |
| 20110133561 | SEMICONDUCTOR DEVICE - A semiconductor device ( | 06-09-2011 |
| 20110133249 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME - A high electron mobility transistor includes first, second and third compound semiconductor layers. The second compound semiconductor layer has a first interface with the first compound semiconductor layer. The third compound semiconductor layer is disposed over the first compound semiconductor layer. The third compound semiconductor layer has at least one of lower crystallinity and relaxed crystal structure as compared to the second compound semiconductor layer. The gate electrode is disposed over the third compound semiconductor layer. Source and drain electrodes are disposed over the second compound semiconductor layer. The two-dimensional carrier gas layer is generated in the first compound semiconductor layer. The two-dimensional carrier gas layer is adjacent to the first interface. The two-dimensional carrier gas layer either is absent under the third compound semiconductor layer or is reduced in at least one of thickens and carrier gas concentration under the third compound semiconductor layer. | 06-09-2011 |
| 20110115542 | LEVEL SHIFT CIRCUIT AND SWITCHING POWER SOURCE APPARATUS - A level shift circuit includes a first resistor connected to a level shift power source, a first transistor having a drain connected to a second end of the first resistor and a source to the ground, a second resistor connected to the level shift power source, a second transistor having a drain connected to a second end of the second resistor and a source to the ground, a pulse generator controlling ON/OFF of the first and second transistors according to an input signal, a control part generating a set signal if the first transistor is ON, a reset signal if the second transistor is ON, and no signal if there is no voltage difference between a voltage at the drain of the first transistor and a voltage at the drain of the second transistor, and a flip-flop providing an output signal according to the set and reset signals. | 05-19-2011 |
| 20110110068 | COMPOSITE SEMICONDUCTOR DEVICE - To provide a composite semiconductor device capable of preventing malfunction of preventing electrical circuits and contributing to miniaturization of a power converter. | 05-12-2011 |
| 20110103109 | AC POWER SOURCE APPARATUS - An AC power source apparatus includes a first AC voltage generator having a first switch set, to output a first AC voltage having a positive-negative asymmetrical waveform by turning on/off the first switch set to a first end of a load; a second AC voltage generator having a second switch set, to output a second AC voltage having a positive-negative asymmetrical waveform and a phase difference of 180 degrees with respect to the first AC voltage by turning on/off the second switch set to a second end of the load; and a control circuit to turn on/off the first switch set, and by setting a phase difference of 180 degrees with respect to the turning on/off of the first switch set, turn on/off the second switch set. A voltage across the load is an AC voltage having a positive-negative symmetrical waveform. | 05-05-2011 |
| 20110101943 | CURRENT DETECTOR - A current detector is comprised of a switch portion having an input node, an output node and a detection node, the switch portion being configured to selectively shift a power current between the input node and the output node and a detection current between the input node and the detection node; a current controller configured to control the detection current so as to equalize voltages at the detection node and the output node, the current controller being coupled with the detection node and the output node and including a transistor and a diode coupled to the transistor in series so as to prevent impression of negative voltage on the transistor, the transistor and the diode being formed within a single monolithic substrate; and a monitor current output portion having a monitor node and being coupled with the current controller, the monitor current output portion being configured to mirror the detection current in the current controller to the monitor node. | 05-05-2011 |
| 20110090716 | DC-DC CONVERTER WITH SNUBBER CIRCUIT - In order to achieve an object to reduce a surge voltage and suppress noise generation, the present invention provides a DC-DC converter with a snubber circuit, which boosts a voltage Vi of a DC power supply. The snubber circuit includes: a series circuit connected to both ends of a smoothing capacitor Co and including a snubber capacitor Cs and a snubber resistor Rs; a snubber diode Ds | 04-21-2011 |
| 20110089980 | CAPACITIVE LOAD DRIVER - A capacitive load driver includes a first switching element whose first end receives positive potential, an EL element arranged between a second end of the first switching element and the ground, a charge collecting capacitor whose first end is connected to a positive electrode terminal of the EL element, a voltage source connected between a second end of the charge collecting capacitor and the ground, and a controller. The controller charges a parasitic capacitance of the EL element and the charge collecting capacitor, and thereafter, applies negative potential from the voltage source to the second end of the charge collecting capacitor. Thereafter, the controller brings the output voltage of the voltage source to ground potential so that the charge collecting capacitor is discharged to charge the EL element. The capacitance of the charge collecting capacitor is set to be sufficiently greater than that of the parasitic capacitance. | 04-21-2011 |
| 20110089919 | HIGH-SIDE DRIVER - A high-side driver has a semiconductor element being connected in series in a power supply path extending from a DC power source to a linear solenoid and turned on/off to control a current of the linear solenoid. The high-side driver includes a current detector of a current of the linear solenoid, a controller of the semiconductor element, a state detector of the high-side driver or the linear solenoid and output a state signal, a first transmit buffer to latch and output the state signal, a second transmit buffer to output the state signal without latching the same, and a transmit shift register to convert the state signal into serial data and transmit the serial data to an external device at predetermined timing. The state detector selects at least one of the first and second transmit buffers and outputs the state signal to the selected one. | 04-21-2011 |
| 20110075463 | POWER CONVERSION APPARATUS AND CONTROLLER THEREOF - A power conversion apparatus includes a converter having an input power source Vin, a reactor L | 03-31-2011 |
| 20110075450 | SWITCHING POWER SUPPLY DEVICE - During a soft start period at the time of startup, a PWM control is carried out. After the soft start period ends, the PWM control is converted into a frequency control, so that stress of a switching element is suppressed and the audible oscillation frequency is removed. As a result, it is possible to obtain a switching power supply device having high power conversion efficiency. | 03-31-2011 |
| 20110073938 | FIELD-EFFECT SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME - A semiconductor substrate of an IGFET has drain regions, a p-type first body region, a p | 03-31-2011 |
| 20110073911 | SEMICONDUCTOR DEVICE - A semiconductor device including: a substrate, which has a composition represented by the formula: Al | 03-31-2011 |
| 20110069514 | DC CONVERSION APPARATUS - A DC conversion apparatus includes a plurality of current resonant converters. Each of the current resonant converters has two switching elements connected in series, a transformer having primary and secondary windings, a series resonant circuit including a resonant reactor, the primary winding of the transformer, and a resonant capacitor, and a rectifying circuit to rectify a voltage generated by the secondary winding of the transformer. The DC conversion apparatus also includes a smoothing circuit having a reactor L | 03-24-2011 |
| 20110069510 | PLANAR LIGHT SOURCE DEVICE - A planar light source device ( | 03-24-2011 |
| 20110062438 | Field-Effect Semiconductor Device - A HEMT-type field-effect semiconductor device has a main semiconductor region comprising two layers of dissimilar materials such that a two-dimensional electron gas layer is generated along the heterojunction between the two layers. A source and a drain electrode are placed in spaced positions on a major surface of the main semiconductor region. Between these electrodes, a gate electrode is received in a recess in the major surface of the main semiconductor region via a p-type metal oxide semiconductor film whereby a depletion zone is normally created in the electron gas layer, with a minimum of turn-on resistance and gate leak current. | 03-17-2011 |
| 20110051474 | RESONANT POWER CONVERSION APPARATUS - A resonant power conversion apparatus includes a transformer T | 03-03-2011 |
| 20110051468 | SWITCHING POWER-SUPPLY APPARATUS - A switching power-supply apparatus includes a first converter | 03-03-2011 |
| 20110051467 | RESONANT SWITCHING POWER SUPPLY DEVICE - Provided is a resonant switching power supply device that can reduce a common mode noise as well as an increase in frequency when a load is light. | 03-03-2011 |
| 20110051462 | POWER FACTOR IMPROVEMENT CIRCUIT - An over-voltage protection circuit of the invention is connected with a DC-DC converter having a structure in which a plurality of switching elements is serially connected to a direct current output voltage terminal of a power factor improvement circuit. An output over-voltage detection resistance of a latch-type output over-voltage detection circuit is connected to a connection point at which the plurality of switching elements is connected. | 03-03-2011 |
| 20110050380 | COIL APPARATUS - A coil apparatus comprising: a core-insertion hole; a plurality of wiring layers including a first wiring layer and a second wiring layer; a coil pattern, which is formed on each of the plurality of wiring layers into a spiral shape around the core-insertion hole, wherein the coil patterns is connected in series and integrated so as to form a single coil formed of laminated wiring layers; and a slit, which divides at least part of each of the coil patterns formed on each of the respective the first wiring layer and the second wiring layer into a plurality of wiring patterns, wherein an outermost wiring pattern on the first wiring layer is connected to an innermost wiring pattern on the second wiring layer, and wherein an innermost wiring pattern on the first wiring layer is connected to an outermost wiring pattern on the second wiring layer. | 03-03-2011 |
| 20110018455 | DISCHARGE LAMP LIGHTING APPARATUS - A discharge lamp lighting apparatus includes a resonant circuit ( | 01-27-2011 |
| 20110018101 | SEMICONDUCTOR DEVICE - A semiconductor device | 01-27-2011 |
| 20110012527 | SYNCHRONOUS OPERATION SYSTEM FOR DISCHARGE LAMP LIGHTING APPARATUSES, DISCHARGE LAMP LIGHTING APPARATUS, AND SEMICONDUCTOR INTEGRATED CIRCUIT THEREOF - Each of discharge lamp lighting apparatus that are connected to a common line includes a sawtooth-wave oscillator to generate a sawtooth signal for PWM-controlling a plurality of switching elements passing a current through a primary winding of a transformer and a capacitor of a resonant circuit connected to a discharge lamp, a PWM comparator controlling the plurality of switching elements according to the sawtooth signal, and a pulse synchronization circuit providing the common line with a synchronization pulse signal based on a pulse signal in relation to the sawtooth signal, and when receiving a synchronization pulse signal from the common line, synchronize the oscillation frequency of the sawtooth signal with the frequency of the synchronization pulse signal from the common line. So that a voltage of aligned frequency and phase is applied to one end of each discharge lamp. | 01-20-2011 |
| 20110007533 | POWER FACTOR CORRECTION CIRCUIT - A power factor correction circuit includes reactors L | 01-13-2011 |
| 20110007529 | DC-TO-DC CONVERTER - The present invention includes: a plurality of switching elements connected in series and connected between two ends of a DC power supply; a first control circuit to alternately turn on and off the switching elements in response to a constant oscillation frequency signal; a series circuit including a primary winding of a transformer and a capacitor connected together in series, and being connected to a connecting point between the switching elements, and to an end of the DC power supply; a rectifying/smoothing circuit to rectify and smooth a voltage in a secondary winding of the transformer thereby to output a DC voltage; a control switching element connected to two ends of the primary or secondary winding of the transformer; and a second control circuit to control the DC voltage at a predetermined voltage by turning on and off the control switching element. | 01-13-2011 |
| 20110006692 | APPARATUS FOR DRIVING CAPACITIVE LIGHT EMITTING DEVICE - A capacitive light emitting device includes: a capacitive light emitting device | 01-13-2011 |
| 20110002146 | MULTIPLE OUTPUT SWITCHING POWER SOURCE APPARATUS - A multiple-output switching power source apparatus includes a control circuit to adjust a time for applying a DC voltage to a primary winding of a transformer by turning on/off a switching element Q | 01-06-2011 |
| 20100315842 | DRIVE CIRCUIT FOR SEMICONDUCTOR SWITCHING ELEMENT - A drive circuit of first and second switches includes a first series circuit having a capacitor and a primary winding of a transformer and connected to both ends of a pulse signal generator, a first secondary winding of the transformer to apply a voltage to a control terminal of the first semiconductor switch based on the pulse signal, the first secondary winding being wound in a direction opposite to the primary winding, a second secondary winding of the transformer to apply a voltage to a control terminal of the second semiconductor switch based on the pulse signal, the second secondary winding being wound in the same direction to the primary winding, and a third semiconductor switch that turns on when the pulse signal is stopped, to shorten an ON period of the first semiconductor switch. | 12-16-2010 |
| 20100302817 | DC-DC CONVERTER - A DC-DC converter includes a plurality of switch elements connected in series between both ends of a DC power source, a series circuit of a primary winding of a transformer and a capacitor, connected between a connection point of the plurality of switch elements and an end of the DC power source, a rectifying-smoothing circuit to rectify and smooth a voltage generated by a secondary winding of the transformer into a DC voltage, and a controller to change a switching frequency of the plurality of switch elements according to a feedback signal generated from the DC voltage and alternately turn on/off the plurality of switch elements. The controller includes a nonlinear response unit | 12-02-2010 |
| 20100295471 | CURRENT BALANCING APPARATUS - A current balancing apparatus includes a power supply unit | 11-25-2010 |
| 20100270991 | DC-DC CONVERTER - A switching regulator for stepping down a DC input voltage to a DC output voltage, the switching regulator including: a switching element; a control circuit that controls activation or deactivation of the switching element; a voltage generation unit that steps down the DC input voltage and supplies the stepped down DC input voltage to the control circuit; and a switching unit that is configured to: supply the DC output voltage to the control unit when the DC output voltage is equal to or higher than a first reference voltage; and stop supply of the DC output voltage when the switching element is in an active state. | 10-28-2010 |
| 20100265741 | POWER FACTOR CORRECTING CONVERTER - A power factor correcting converter includes a DC-DC converter to convert a DC voltage, which is formed by rectifying an AC voltage of an AC power source through a rectifier, into a DC voltage of the DC-DC converter and a step-up converter to step up the DC voltage of the DC-DC converter. Secondary windings of a transformer Ta in the DC-DC converter are directly connected to the step-up converter. | 10-21-2010 |
| 20100264546 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a semiconductor device and manufacturing method of the semiconductor device which can prevent breaks in an interlayer insulation film ( | 10-21-2010 |
| 20100244789 | INTERLEAVED CONVERTER - The present invention includes: an input voltage detector detecting an input voltage of a parallel converter and outputting an input voltage signal; an output voltage detector detecting an output voltage of the parallel converter; and a controller. The controller includes an error amplifier comparing the output voltage signal and a reference voltage and outputting an error amplification signal; an arithmetic operator generating an ON time signal and an OFF time signal based on the input and output voltage signals and the error amplification signal; a phase signal generator generating plural phase signals having different phases based on the ON and OFF time signals and the error amplification signal; a pulse generator generating plural pulse-train signals synchronized with the respective phase signals based on the ON time signal, the error amplification signal and the phase signals; and a driver driving the switching units in accordance with the pulse-train signals. | 09-30-2010 |
| 20100244183 | INTEGRATED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An integrated semiconductor device and method of manufacturing the same includes leaving one part of a semiconductor layer so that an inclined surface is formed on a trench when forming the trench on a SOI wafer. A thick silicon oxide film (second insulation film) is formed along this incline surface. This thick silicon oxide film prevents oxygen entering a boundary surface between an insulation layer and the semiconductor layer of the SOI wafer within the trench. | 09-30-2010 |
| 20100244096 | SEMICONDUCTOR DEVICE - A device includes a substrate; a buffer layer; and a device formation layer, wherein the buffer layer is formed by sequentially stacking, a plurality of times, a first nitride-based semiconductor layer made of a material having a lattice constant lower than a lattice constant of a material of the substrate; a first composition graded layer made of a material having a lattice constant gradually higher than the lattice constant of the first nitride-based semiconductor layer in a thickness direction; a second nitride-based semiconductor layer made of a material having a lattice constant higher than the lattice constant of the first nitride-based semiconductor layer; and a second composition graded layer made of a material having a lattice constant gradually lower than the lattice constant of the second nitride-based semiconductor layer in the thickness direction, and the second composition graded layer is thicker than the first composition graded layer. | 09-30-2010 |
| 20100244018 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A object is to provide a semiconductor device having normally-off characteristics and capable of easily suppressing field concentration below a side surface of a concave portion. A device includes a nitride-based semiconductor layer having a concave portion formed in a part of one principal surface, a side surface of the concave portion being slanted; a first electrode provided on the principal surface; a second electrode on an opposite side to the first electrode across the concave portion, and provided on the principal surface; an insulating layer formed on both sides of the concave portion in the principal surface; and | 09-30-2010 |
| 20100237802 | CURRENT BALANCING DEVICE, LED LIGHTING DEVICE, AND LCD B/L MODULE - A current balancing device includes: a power supply that outputs sinusoidal alternating-current; and a plurality of series circuits, each of the series circuits including a full-wave rectifier, one or more of windings, and one or more of loads in series connection, the full-wave rectifier connected to an output of the power supply and performing full-wave rectification for the alternating-current of the power supply. Currents flowing in the respective series circuits are balanced based on an electromagnetic force generated in one or more of the windings. | 09-23-2010 |
| 20100237792 | DISCHARGE TUBE POWER SUPPLY APPARATUS AND SEMICONDUCTOR INTEGRATED CIRCUIT - An AC conversion circuit includes a main transformer having a primary winding and a secondary winding to electrically insulate the AC power source side and the discharge tube side from each other, an IC | 09-23-2010 |
| 20100237387 | SEMICONDUCTOR WAFER, SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF - A semiconductor wafer includes a substrate, a buffer region formed on one main surface of the substrate and formed from a compound semiconductor, and a main semiconductor region formed in the buffer region and formed from a compound semiconductor, wherein the buffer region includes a first multi-layer structured buffer region and a second multi-layer structured buffer region stacked with a plurality of alternating first layers and second layers, and a single layer structured buffer region arranged between the first multi-layer structured buffer region and the second multi-layer structured buffer region, the first layer is formed from a compound semiconductor which has a lattice constant smaller than a lattice constant of a material which forms the substrate, the second layer is formed from a compound semiconductor which has a lattice constant between a lattice constant of a material which forms the substrate and a lattice constant of a material which forms the first layer, and wherein the single layer structured buffer region is thicker than the first layer and the second layer, and is formed from a compound semiconductor which has a lattice constant between a lattice constant of a material which forms the first layer and a lattice constant of a material which forms the second layer. | 09-23-2010 |
| 20100237385 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, a third semiconductor layer on the second semiconductor layer and being in the shape of an island on the second semiconductor layer, a dielectric film on the second and third semiconductor layers, a control electrode on the dielectric film, a first main electrode electrically connected to the second and third semiconductor layers, and a second main electrode electrically connected to the first semiconductor layer and having a Pd layer. | 09-23-2010 |
| 20100232184 | DC CONVERTER - A DC converter includes: a transformer (T | 09-16-2010 |
| 20100231827 | LIQUID CRYSTAL DISPLAY APPARATUS AND ILLUMINATING APPARATUS THEREFOR - An LCD apparatus includes an LCD panel to display an image and an LED backlight to illuminate the LCD panel from behind. The LCD panel has first sections divided in a vertical direction and second sections divided in a horizontal direction. The LED backlight includes an LED light source and an edge-type light guide. The LED light source includes LEDs that are arranged along at least one of upper and lower sides of the light guide and are allocated to the second sections, respectively. A brightness of an image displayed in a given second section is used to control a light quantity of the corresponding LED. Each LED radially emits light so that light beams from adjacent ones of the LEDs intersect each other. | 09-16-2010 |
| 20100230746 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes an epitaxial layer having a first conduction type, a base layer formed adjacent and on the epitaxial layer and having an opposite second conduction type to the first conduction type, a source layer formed selectively on the base layer and having the first conduction type, a trench which passes through the base layer and the source layer and which reaches the epitaxial layer, an insulation film formed along an interior wall of the trench, a control electrode formed within the trench via the insulation film, and a semiconductor region formed along the bottom part of the trench at the epitaxial layer and having the first conduction type. | 09-16-2010 |
| 20100225286 | POWER SOURCE APPARATUS - A power source apparatus includes a first converter having a reactor L | 09-09-2010 |
| 20100220505 | DC/DC CONVERTER - A DC/DC converter has three half-bridge-type current resonant DC/DC converters that are connected in parallel, have a phase difference of 120 degrees, and are operated at a frequency higher than a resonant frequency. Each of the three half-bridge-type current resonant DC/DC converters includes a transformer having a primary winding, a secondary winding, and a tertiary winding, a series circuit connected to both ends of a DC power source and including first and second switching elements, a series circuit connected to both ends of the first or second switching element and including a resonant reactor, the primary winding of the transformer, and a resonant capacitor, and a rectifying circuit to rectify a voltage generated by the secondary winding and output the rectified voltage to a smoothing capacitor. The tertiary windings are annularly connected to a reactor. | 09-02-2010 |
| 20100214210 | CURRENT BALANCING DEVICE, LED LIGHTING APPARATUS, LCD BACKLIGHT MODULE, AND LCD DISPLAY UNIT - The present invention includes: a power supply unit | 08-26-2010 |
| 20100194199 | CURRENT BALANCING APPARATUS, CURRENT BALANCING METHOD, AND POWER SUPPLY APPARATUS - A current balancing apparatus includes a first transformer having a first primary winding and a first secondary winding electromagnetically coupled with the first primary winding, the first primary winding having a first end connected to a first load that passes a first current; a second transformer having a second primary winding and a second secondary winding electromagnetically coupled with the second primary winding, the second primary winding having a first end connected to a second load that passes a second current having an AC component substantially having a 180-degree phase difference with respect to the first current; and a series circuit including the first secondary winding, the second secondary winding, and a current smoother, to balance the first current and second current with each other. | 08-05-2010 |
| 20100193842 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device | 08-05-2010 |
| 20100188874 | AC - DC CONVERTER - AC-DC converter is provided which comprises an auxiliary winding | 07-29-2010 |
| 20100187603 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device which can relax the electric field in the junction termination region, and can achieve a high breakdown voltage. | 07-29-2010 |
| 20100186704 | DIESEL ENGINE START-UP ASSISTING DEVICE - A diesel engine start-up assisting device includes a plurality of first-and-second switching elements | 07-29-2010 |
| 20100182810 | ALTERNATING-CURRENT POWER SUPPLY DEVICE - An alternating-current power supply device includes: a direct-current power supply Vin; a transformer T | 07-22-2010 |
| 20100182808 | SWITCHING POWER SOURCE DEVICE - A pseudo-resonant switching power source device is provided which comprises a primary winding | 07-22-2010 |
| 20100172159 | MULTIPLE-OUTPUT SWITCHING POWER SUPPLY UNIT - A multiple-output switching power supply unit includes: a voltage generating circuit Q | 07-08-2010 |
| 20100171433 | LUMINESCENT LAMP LIGHTING DEVICE - A luminescent lamp lighting device includes a plurality of switch circuits | 07-08-2010 |
| 20100164392 | DISCHARGE LAMP LIGHTING APPARATUS - A discharge lamp lighting apparatus is inexpensive and is capable of generally relaxing an unevenness of brightness caused by a brightness gradient of a discharge lamp. The apparatus includes an inverter | 07-01-2010 |
| 20100164385 | DISCHARGE LAMP LIGHTING DEVICE - A discharge lamp lighting device is provided to comprise tube current detecting circuits | 07-01-2010 |
| 20100155830 | ELECTRONIC SWITCHING DEVICE - An integrated switching device has a switching IGFET connected between a pair of main terminals, a protector IGFET connected between the drain and gate electrodes of the switching IGFET, and a gate resistor connected between a main control terminal and the gate electrode of the switching IGFET. The protector IGFET has its gate electrode connected to the source electrode of the switching IGFET. The protector IGFET turns on in response to an application of a verse voltage to the switching IGFET thereby protecting the same from a reverse current flow. | 06-24-2010 |
| 20100155781 | MONOLITHIC INTEGRATED CIRCUIT OF A FIELD-EFFECT SEMICONDUCTOR DEVICE AND A DIODE - A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate. | 06-24-2010 |
| 20100155780 | SEMICONDUCTOR DEVICE - An aspect of the present invention inheres in a semiconductor device includes a semiconductor region, a source electrode and a drain electrode, which are provided on a main surface of the semiconductor region, a gate electrode exhibiting normally-off characteristics, the gate electrode being provided above the main surface of the semiconductor region while interposing a p-type material film therebetween, and being arranged between the source electrode and the drain electrode, and a fourth electrode that is provided on the main surface of the semiconductor region, and is arranged between the gate electrode and the drain electrode. | 06-24-2010 |
| 20100155720 | FIELD-EFFECT SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATION - A heterojunction field-effect semiconductor device has a main semiconductor region comprising two layers of dissimilar materials such that a two-dimensional electron gas layer is generated along the heterojunction between the two layers. A source and a drain electrode are placed in spaced positions on a major surface of the main semiconductor region and electrically coupled to the 2DEG layer. Between these electrodes, a gate electrode is received in a recess in the major surface of the main semiconductor region via a p-type metal oxide semiconductor film and insulating film, whereby a depletion zone is normally created in the 2DEG layer, making the device normally off. The p-type metal oxide semiconductor film of high hole concentration serves for the normally-off performance of the device with low gate leak current, and the insulating film for further reduction of gate leak current. | 06-24-2010 |
| 20100148910 | ELECTRONIC CIRCUIT DEVICE - An electronic circuit device | 06-17-2010 |
| 20100127685 | POWER SOURCE APPARATUS - A power source apparatus has a power source unit (AC, DB, Ci), a pair of reactors L | 05-27-2010 |
| 20100123479 | LEVEL-SHIFT CIRCUIT - A level-shift circuit converts a first voltage level into a second voltage level different from the first voltage level. The level-shift circuit includes a first high-side signal detection circuit, a second high-side signal detection circuit, a drive circuit and electric current detection circuits. The first high-side signal detection circuit sets a logical voltage state of the second voltage level via a first capacitor. The second high-side signal detection circuit resets the logical voltage state of the second voltage level via a second capacitor. The drive circuit on-off drives a high-side switch connected to a low-side switch in series by a set signal of the first high-side signal detection circuit and a reset signal of the second high-side signal detection circuit. The electric current detection circuits detect an electric current flowing into or from the first and/or second capacitors. | 05-20-2010 |
| 20100123478 | LEVEL SHIFT CIRCUIT - A level shift circuit shifts a first voltage level to a second voltage level that is different from the first voltage level. The level shift circuit includes a set-level circuit | 05-20-2010 |
| 20100123169 | COMPOUND SEMICONDUCTOR SUBSTRATE AND DEVICE THEREWITH - A semiconductor device is formed on a semiconductor substrate, which is comprised of: a base substrate; and a multilayer being formed on the base substrate and having a surface serving for an interface with the semiconductor device, the multilayer including alternating layers of a first compound semiconductor and a second compound semiconductor materially distinguishable from the first compound semiconductor, one selected from the group consisting of the first compound semiconductor and the second compound semiconductor being doped with one selected from the group consisting of carbon and transition elements. | 05-20-2010 |
| 20100123139 | SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - An aspect of the present invention inheres in a semiconductor wafer includes a support substrate, a first nitride semiconductor layer, at least an upper surface of which has become monocrystalline, the first semiconductor layer being provided on the support substrate, and a second nitride semiconductor layer containing nitrogen and gallium, the second nitride semiconductor layer being provided on the upper surface of the first nitride semiconductor layer. | 05-20-2010 |
| 20100118576 | POWER FACTOR CORRECTION CIRCUIT - A power factor correction circuit includes a rectifier | 05-13-2010 |
| 20100109434 | MULTIPLE OUTPUT SWITCHING POWER SOURCE APPARATUS - A multiple output switching power source apparatus includes first and second transformers each having a primary winding, a first secondary winding, and a second secondary winding; a first control circuit adjusting a time for applying a DC voltage to the primary winding of the first transformer; a first rectifying-smoothing circuit rectifying and smoothing a voltage generated at the first secondary winding of the first transformer and providing a first output voltage; a second control circuit adjusting a time for applying the DC voltage to the primary winding of the second transformer; a second rectifying-smoothing circuit rectifying and smoothing a voltage generated at the first secondary winding of the second transformer and providing a second output voltage; and a third rectifying-smoothing circuit rectifying and smoothing a voltage across a series winding having the second secondary windings of the first and second transformers and providing a third output voltage. | 05-06-2010 |
| 20100102866 | SIGNAL PROCESSING APPARATUS INCLUDING LATCH CIRCUIT - A signal processing apparatus includes: a latch circuit; a set pulse generation circuit; a reset pulse generation circuit; and a correction set signal forming circuit. The correction set signal forming circuit forms a correction set signal for applying a set instruction continuously during a time period from a time point of a front edge of the set pulse generated from the set pulse generation circuit or a time point delayed from the time point of the front edge to a time point at which the reset pulse is generated. The correction set signal forming circuit supplies the correction set signal to the set input terminal of the latch circuit. | 04-29-2010 |
| 20100102357 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes: a main semiconductor region comprising a first nitride semiconductor layer having a first band gap, and a second nitride semiconductor layer having a second band gap larger than the first band gap, a heterojunction being formed between the first nitride semiconductor layer and the second nitride semiconductor layer such that a two-dimensional electron gas layer can be caused inside the first nitride semiconductor layer based on the heterojunction; a source electrode; a drain electrode; a third nitride semiconductor layer formed on the first nitride semiconductor layer and between the source electrode and the drain electrode; a fourth nitride semiconductor layer formed on the third nitride semiconductor layer and having p-type conductivity; and a gate electrode formed on the fourth nitride semiconductor layer. The third nitride semiconductor layer has a third band gap smaller than the first band gap. | 04-29-2010 |
| 20100090225 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes: a main semiconductor region comprising a first nitride semiconductor layer having a first band gap, and a second nitride semiconductor layer having a second band gap larger than the first band gap, a heterojunction being formed between the first nitride semiconductor layer and a the second nitride semiconductor layer such that two-dimensional electron gas layer can be caused inside the first nitride semiconductor layer based on the heterojunction; a source electrode formed on the main semiconductor region; a drain electrode formed on the main semiconductor region and separated from the source electrode; a third nitride semiconductor layer formed on the first nitride semiconductor layer and between the source electrode and the drain electrode; and a gate electrode formed on the third nitride semiconductor layer. The third nitride semiconductor layer has a third band gap smaller than the first band gap. | 04-15-2010 |
| 20100085025 | DRIVING CIRCUIT OF LOAD - A driving circuit of a load has an output semiconductor element connected in series in a power supply path from a power source to the load, to control a current of the load, a PWM signal generator for controlling ON/OFF of the output semiconductor element, a driver of the output semiconductor element according to the PWM signal, a detection resistor made of a semiconductor detecting a current of the load, a current output amplifier outputting a monitored current of detection resistor without being influenced by variation of ambient temperature, a resistor converting the monitored current into a monitored voltage, a current source outputting a constant current without being influenced by variation of ambient temperature, a resistor outputting a reference voltage according to the constant current, and an A/D converter converting the monitored voltage according to the reference voltage into a detected current value of the current of the load. | 04-08-2010 |
| 20100078683 | SEMICONDUCTOR DEVICE - A semiconductor device include: a nitride group semiconductor functional layer including a second nitride group semiconductor region on a first nitride group semiconductor region where a two-dimensional carrier gas layer is made, the second nitride group semiconductor region functioning as a barrier layer; a first main electrode electrically connected to one end of the two-dimensional carrier gas layer; a second main electrode electrically connected to the other end of the two-dimensional carrier gas layer; and metal oxide films placed between the first and second main electrodes, electrically connected to the first main electrode, and reducing a carrier density of the two-dimensional carrier gas layer. | 04-01-2010 |
| 20100073976 | DC/AC CONVERTER - A DC/AC converter includes: a resonant circuit including a transformer having a primary winding and a secondary winding and at least one capacitor, in which the capacitor is connected to at least one of the primary winding and secondary winding of the transformer, and an output terminal to which the load is to be connected is provided on the secondary winding side; a switching circuit connected to both ends of a direct current power supply and having a bridge configuration composed of switching elements for flowing a current through the primary winding of the transformer and the capacitor in the resonant circuit; and a control circuit that turns on/off the switching elements by a pair of drive signals, and flows a current through the load bidirectionally, thereby performs a PWM control for the current flowing through the load, wherein the control circuit includes step drive circuits which turn on the switching elements in steps, and the step drive circuits are provided so as to individually correspond to the switching elements. | 03-25-2010 |
| 20100066261 | DC/AC CONVERTER AND CONTROLLER THEREOF - A DC/AC converter includes a resonant circuit having a first capacitor connected to at least one of a primary winding and a secondary winding of a transformer and an output end connected to a load, the resonant circuit receiving an alternating signal having a predetermined frequency and amplitude to pass a current, a variable impedance element connected in parallel with a part of the output end of the resonant circuit, the variable impedance element changing the impedance value thereof according to a current passing through the load, and a controller to control the current passing through the load to a predetermined value by changing the resonant frequency of the resonant circuit according to the changed impedance value of the variable impedance element. | 03-18-2010 |
| 20100066234 | Connector for CCFL, CCFL with connector and display device - A connector is provided which comprises a metallic sleeve | 03-18-2010 |
| 20100060191 | ELECTRIC-DISCHARGE-LAMP LIGHTING APPARATUS - An electric-discharge-lamp lighting apparatus including: an inverter that converts a DC voltage to a high-frequency voltage; an insulating transformer for low voltage with a primary winding connected to an output end of the inverter; and a plurality of step-up transformers. In the electric-discharge-lamp lighting apparatus, a first series circuit formed by connecting primary windings of the plurality of step-up transformers in series to one another is connected to a secondary winding of the insulating transformer. In addition, one or more electric discharge lamps are connected respectively to secondary windings of the step-up transformers. | 03-11-2010 |
| 20100053998 | SWITCHING POWER SUPPLY DEVICE - A switching power supply device includes: a transformer that has a primary winding and a secondary winding; a switching element connected to the primary winding of the transformer; a control circuit that controls the switching element to be turned on/off in a case where a voltage is inputted to the primary winding of the transformer, and thereby induces a voltage in the secondary winding of the transformer; and a rectifying/smoothing circuit that rectifies and smoothes the voltage induced in the secondary winding of the transformer, and outputs the rectified and smoothed voltage to a load. The control circuit has: a current control unit that controls the switching element to prevent a current flowing through the switching element from being lowered to a fixed value or less in a case where the load is light; and an intermittent control unit that, in the case where the load is light, controls the switching element to perform an intermittent oscillation operation based on a feedback signal corresponding to an output voltage to the load. | 03-04-2010 |
| 20100052648 | DRIVE CIRCUIT - A drive circuit for a switching circuit has a high-side drive circuit to turn on/off, according to a control signal, a switching element QH arranged on a high side of a DC power source Vin and a low-side drive circuit to turn on/off alternately with the switching element QH according to the control signal a switching element QL arranged on a low side of the DC power source and connected in series with the switching element QH. Ends of an auxiliary power source Vcc | 03-04-2010 |
| 20100052552 | APPARATUS FOR LIGHTING LEDS - An apparatus for lighting LEDs includes an LED group load having the LEDs, a converter to generate a voltage applied to the LED group load, a current controller to control a current of the LED group load, a voltage controller to control an output voltage provided by the converter, a time division circuit to intermittently pass a current through the LED group load, and a selector. The selector, during a period in which the time division circuit passes a current through the LED group load, selects the current controller to control a current of the LED group load and thereby control an output voltage provided by the converter, and during a period in which the time division circuit passes no current through the LED group load, selects the voltage controller to control an output voltage provided by the converter. | 03-04-2010 |
| 20100052015 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first compound semiconductor layer having a two-dimensional carrier gas channel, a second compound semiconductor layer which functions as a barrier layer and is arranged above the first compound semiconductor layer, a first main electrode connected to one end of the two-dimensional carrier gas channel, and a second main electrode connected to another end of the two-dimensional carrier gas channel, these ends being separated, wherein a compound ratio of an elemental compound of the second compound semiconductor layer is different in a direction of the two-dimensional carrier gas channel between the first main electrode and the second main electrode. | 03-04-2010 |
| 20100046251 | MULTIPLE-OUTPUT SWITCHING POWER SOURCE APPARATUS - A multiple-output switching power source apparatus has a series resonant circuit connected in parallel with a switch Q | 02-25-2010 |
| 20100039835 | SWITCHING POWER SOURCE APPARATUS - A switching power source apparatus has a controller generating a drive signal that controls an ON/OFF period of a switching element | 02-18-2010 |
| 20100020575 | SWITCHING POWER SUPPLY DEVICE - A switching power supply device includes: a transformer having a primary winding, a secondary winding and an auxiliary winding; a switching element connected to the primary winding of the transformer; a control circuit that performs an ON/OFF control for the switching element in a case where a voltage is inputted to the primary winding of the transformer, thereby induces voltages in the secondary winding and auxiliary winding of the transformer; a rectifying/smoothing circuit for rectifying and smoothing the voltage induced in the secondary winding of the transformer and outputting the voltage to a load; an auxiliary power supply circuit that rectifies and smoothes the voltage induced in the auxiliary winding of the transformer, and charges a capacitor owned by the auxiliary power supply circuit with the voltage to thereby supply power to the control circuit; and a starting circuit that supplies a current to the capacitor of the auxiliary power supply circuit in a case of starting the control circuit and in a case where the load is light and the switching element is turned off. | 01-28-2010 |
| 20100019743 | DC-DC CONVERTER - The present invention provides a DC-DC converter including a first series circuit connected to both ends of a first switch and formed of a winding of a first transformer, a first reactor, a first diode, and a smoothing capacitor, a second diode connected to a connection point of a primary winding of the first transformer, the winding of the first transformer and the first switch, and to one end of the smoothing capacitor, a second series circuit connected to both ends of a second switch and formed of a winding of a second transformer, a second reactor, a third diode, and the smoothing capacitor, a fourth diode connected to a connection point of a primary winding of the second transformer, the winding of the second transformer and the second switch, and to the one end of the smoothing capacitor, a third reactor connected to both ends of a series circuit of a secondary winding of the first transformer and a secondary winding of the second transformer, and a control circuit which alternately turns on the first switch and the second switch every ½ cycle, turns off the first switch during an on-period of the second switch, and turns off the second switch during an on-period of the first switch. | 01-28-2010 |
| 20100019696 | POWER CONVERTER - The present invention includes a first DC converter converting AC voltage, into DC voltage while correcting a power factor, and a second DC converter electrically isolating the first DC converter from an LED group load, and converting the DC voltage, into a predetermined DC voltage and supply the resultant voltage to the LED group load. The second DC converter includes a current detection circuit disposed on the secondary side, and detecting current flowing into the LED group load, an error amplifier amplifying an error between a detected current value detected and a reference current value, a signal transmission isolation element transmitting a control signal based on an output signal from the error amplifier, to the primary side, and a switching element transferring power to the secondary side through the transformer by being turned on/off according to the control signal. | 01-28-2010 |
| 20100019692 | POWER CONVERSION APPARATUS - A power conversion apparatus includes a first DC converter to convert an AC voltage from an AC power source into a DC voltage and correct a power factor, a light emitting load to emit light under a predetermined DC voltage, a second DC converter to electrically insulate the first DC converter and the light emitting load from each other, convert the DC voltage from the first DC converter into the predetermined DC voltage, and supply the predetermined DC voltage to the light emitting load, a plurality of loads to operate under low DC voltages, and a third DC converter to electrically insulate the first DC converter and the plurality of loads from each other, convert the DC voltage from the first DC converter into low DC voltages, and supply the low DC voltages to the plurality of loads. | 01-28-2010 |
| 20100014320 | SWITCHING POWER SUPPLY DEVICE AND METHOD FOR ADJUSTING DEAD TIME THEREOF - A resonant switching power supply device includes: a first switching element and a second switching element which are configured to convert and adjust power. A capacitance of a first/second gate-drain capacitor existing between a gate and a drain of the first/second switching element and a resistance of a first/second gate resistor of the first/second switching element are set such that, in a period during which a resonance current flows by switching the second/first switching element, a gate-source voltage of the first/second switching element is lower than an ON threshold voltage of the first/second switching element due to the resonance current divided into the first/second gate-drain capacitor. | 01-21-2010 |
| 20100012978 | NORMALLY-OFF FIELD-EFFECT SEMICONDUCTOR DEVICE - A normally-off HEMT is made by first providing a substrate having its surface partly covered with an antigrowth mask. Gallium nitride is grown by epitaxy on the masked surface of the substrate to provide an electron transit layer comprised of two flat-surfaced sections and a V-notch-surfaced section therebetween. The flat-surfaced sections are formed on unmasked parts of the substrate surface whereas the V-notch-surfaced section, defining a V-sectioned notch, is created by lateral overgrowth onto the antigrowth mask. Aluminum gallium nitride is then deposited on the electron transit layer to provide an electron supply layer which is likewise comprised of two flat-surfaced sections and a V-notch-surfaced section therebetween. The flat-surfaced sections of the electron supply layer are sufficiently thick to normally generate two-dimensional electron gas layers due to heterojunctions thereof with the first and the second flat-surfaced section of the electron transit layer. The V-notch-surfaced section of the electron supply layer is not so thick, normally creating an interruption in the two-dimensional electron gas layer. | 01-21-2010 |
| 20090316439 | DC POWER SOURCE APPARATUS - A DC power source apparatus converts a DC input voltage into high-frequency power by turning on/off a switching element connected to a primary winding of a transformer and converts the high-frequency power transmitted to a secondary winding of the transformer into a DC output voltage. The primary and secondary windings of the transformer include a core winding set having a primary winding P | 12-24-2009 |
| 20090315075 | SEMICONDUCTOR DEVICE - A semiconductor device is, constituted by: a nitride group semiconductor functional layer which includes a first nitride group semiconductor region, a second nitride group semiconductor region provided on the first nitride group semiconductor region by a hetero junction, and a two-dimensional carrier gas channel near the hetero junction of the first nitride group semiconductor region; a first main electrode and a second main electrode connected to the two-dimensional carrier gas channel by ohmic contact; and a gate electrode disposed between the first main electrode and the second main electrode. The nitride group semiconductor region has different thicknesses between the second main electrode and the gate electrode, and between the first main electrode and the gate electrode. | 12-24-2009 |
| 20090315071 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor device 10 includes forming a plurality of second conductive second semiconductor regions at specific intervals on one main surface of a first conductive first semiconductor region, the plurality of second conductive second semiconductor regions being opposite to the first conductive first semiconductor region, forming a plurality of the first conductive third semiconductor regions on a main surface of the second semiconductor region, the plurality of the first conductive third regions being separated from each other, forming a plurality of holes at specific intervals on an another main surface which faces the one main surface of the first semiconductor region, the plurality of holes being separated from each other, forming a pair of adjacent second conductive fourth semiconductor regions which are alternately connected at a bottom part of the hole within the first semiconductor region, and burying an electrode within the hole. | 12-24-2009 |
| 20090315038 | COMPOUND SEMICONDUCTOR ELEMENT RESISTIBLE TO HIGH VOLTAGE - A compound semiconductor element is provided which electrically connects an electrode | 12-24-2009 |
| 20090310386 | POWER FACTOR CORRECTION CIRCUIT - A power factor correction circuit steps up and power-factor-corrects a rectified voltage, which has been rectified from an AC input voltage of an AC power source Vin, through an ON/OFF operation of a switching element Q | 12-17-2009 |
| 20090309115 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a package base having recesses which are open in a light irradiating direction; a plurality of light emitting elements arranged on bottoms of the recesses and emitting light having different colors; first light transmitting resin extending over the light emitting elements on the bottoms of the recesses and containing a fluorescent substance; and second light transmitting resin extending over the first transmitting resin in the recesses and oriented toward openings of the recesses, containing a fewer fluorescent substance than the fluorescent substance of the first light transmitting resin, and being thicker than the first light transmitting resin. | 12-17-2009 |
| 20090303751 | POWER SOURCE APPARATUS AND CONTROL METHOD THEREOF - A power source apparatus includes a DC voltage generator ( | 12-10-2009 |
| 20090290395 | POWER FACTOR CORRECTION CIRCUIT - A power factor correction circuit includes a first rectifier to rectify an AC voltage, a series circuit connected to an output of the first rectifier and including a step-up reactor and a switching element, a rectifying-smoothing circuit connected to both ends of the switching element and including a second rectifier and a smoothing capacitor, an input voltage detector to detect an output voltage of the first rectifier, an output voltage detector to detect a voltage across the smoothing capacitor, an error amplifier to amplify an error between the output voltage signal and a reference voltage, and a controller to determine an ON/OFF duty ratio of the switching element according to the amplified error signal and a result of a calculation carried out on the input voltage signal and output voltage signal. | 11-26-2009 |
| 20090289278 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes: a collector layer of a first conductivity type; a semiconductor area of a second conductivity type formed on the collector layer; a base layer of the first conductivity type formed on the semiconductor area; an emitter layer of the second conductivity type formed in an island shape on the base layer; an insulation film formed on the semiconductor area, the base layer and the emitter layer; a gate electrode formed on the insulation film; an emitter electrode formed on the base layer and the emitter layer; a collector electrode formed on the collector layer; and a crystal defect area of the first conductivity type locally formed in the collector layer. A position of a defect concentration peak of the crystal defect area is in the collector layer. An edge of the crystal defect area adjoins the semiconductor area or is located in the semiconductor area. | 11-26-2009 |
| 20090267535 | AC POWER SOURCE APPARATUS - An AC power source apparatus includes an inverter | 10-29-2009 |
| 20090262557 | BI-DIRECTIONAL DC-DC CONVERTER - A bi-directional DC-DC converter includes a first series circuit connected to ends of a first DC power source and including a first winding of a first reactor and a first switch; a second series circuit connected to ends of the first switch and including a second winding of the first reactor, a second reactor, a second switch, a third switch, and a second DC power source; a third series circuit connected to the ends of the first switch and including a fourth switch and the second DC power source; and a control circuit configured to turn on/off the switches and thereby carry out step-up and step-down operations between the first and second DC power sources. | 10-22-2009 |
| 20090262555 | CURRENT-MODE CONTROLLED DC-DC CONVERTER - A current-mode controlled DC-DC converter includes a comparator comparing a first or second current detection signal with a first or second reference current that is based on an error voltage of a voltage detection signal, a pulse generator generating a first pulse signal whose ON time is longer than an interval between when the second current detection signal reaches a minimum value and when the second current detection signal reaches the second reference current, a pulse generator generating a second pulse signal whose ON time is longer than an interval between when the first current detection signal reaches a minimum value and when the first current detection signal reaches the first reference current, the second pulse signal being behind the first pulse signal by a half period, and a PWM circuit generating a first or second PWM signal according to the pulse signal and an output signal from the comparator, thereby turning on/off a switch. | 10-22-2009 |
| 20090256423 | MULTIPLE OUTPUT SWITCHING POWER SOURCE APPARATUS - A multiple output switching power source apparatus includes first and second switching elements Q | 10-15-2009 |
| 20090251925 | CURRENT RESONANT DC-DC CONVERTER OF MULTI-OUTPUT TYPE - A current resonant DC-DC converter of multi-output type is provided which comprises an output-regulatory MOS-FET | 10-08-2009 |
| 20090251055 | DISCHARGE LAMP LIGHTING APPARATUS - A discharge lamp lighting apparatus includes a first inverter, a second inverter to output a voltage whose phase is opposite to that of a voltage provided by the first inverter, a discharge lamp connected between a first output terminal of the first inverter and a first output terminal of the second inverter, a first current detection circuit arranged between a second output terminal of the first inverter and a common potential and having a first current detection element and a second current detection element that are connected in series, a second current detection circuit arranged between a second output terminal of the second inverter and the common potential and having a third current detection element and a fourth current detection element that are connected in series, and a protection circuit to detect a current abnormality according to a composite signal of outputs of the second and fourth current detection elements and stop the operation of the first and second inverters. | 10-08-2009 |
| 20090243505 | FREQUENCY SYNCHRONIZING METHOD FOR DISCHARGE TUBE LIGHTING APPARATUS, DISCHARGE TUBE LIGHTING APPARATUS, AND SEMICONDUCTOR INTEGRATED CIRCUIT - (1) An oscillator generates a triangular wave signal whose inclination for charging a capacitor and inclination for discharging the same are the same and which is used to turn on/off FETs Qp | 10-01-2009 |
| 20090242910 | LIGHT EMITTING DEVICE - A light emitting device includes: a first semiconductor region; a second semiconductor region and third semiconductor region which are provided in the first semiconductor region; a first semiconductor light emitting element of which first electrode is electrically connected to a main surface of the second semiconductor region; a second semiconductor light emitting element of which third electrode is electrically connected to a main surface of the third semiconductor region; and a conductor which electrically connects the second electrode of the first semiconductor light emitting element and the third semiconductor region, and which electrically connects the second electrode and the third electrode through the third semiconductor region. In the light emitting device, the semiconductor light emitting elements are connected in series, and are directly connected to a power source. | 10-01-2009 |
| 20090242906 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING UNIT - A semiconductor light emitting device includes: an outer surrounding body having a recessed portion formed in an upper surface of the outer surrounding body; a lead terminal led out from a side surface of the outer surrounding body; and a semiconductor light emitting element disposed in the recessed portion. The outer surrounding body has a cut portion formed at a corner defined by a cross point of extension lines of adjacent sides in a planar outline of the outer surrounding body viewed from the upper surface of the outer surrounding body. The lead terminal is led out from the cut portion. | 10-01-2009 |
| 20090237853 | LOAD DRIVE APPARATUS - A load drive apparatus is provided which comprises a switching element | 09-24-2009 |
| 20090236660 | Insulated-Gate Field-Effect Transistor and Method of Making the Same - An IGFET that can be turned off when a reverse voltage is applied. Included is a semiconductor substrate having formed therein an n-type drain region, p-type first body region, p | 09-24-2009 |
| 20090236628 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a conductive substrate; a semiconductor light emitting layer which includes a first semiconductor layer formed on one surface of the conductive substrate and having a first conductivity type, and a second semiconductor layer formed on the first semiconductor layer and having a second conductivity type opposite to the first conductivity type; first light emitting spots which are alternately arranged around a periphery of the semiconductor light emitting layer and emitting light to an exterior from the semiconductor light emitting layer; second light emitting spots having surfaces intersecting with the first light emitting spots and emitting light at an amount smaller than an amount of light emitted via the first light emitting spots; and wirings arranged along the second light emitting spots and electrically short circuiting an area between the first light emitting layer and the surfaces of the conductive substrate. | 09-24-2009 |
| 20090231883 | DC-DC CONVERTER - A DC-DC converter includes: a first series circuit in which a resonance reactor, a primary winding of a transformer, and a switching element are connected in series, the first series circuit being connected to both ends of a direct current power supply; a second series circuit in which a first rectifier, a current resonance capacitor, and a secondary winding of the transformer are connected in series, the second series circuit being connected to both ends of the direct current power supply; a rectifying/smoothing circuit having a second rectifier and a smoothing capacitor and connected to both ends of a series circuit of the current resonance capacitor and the secondary winding of the transformer; an output voltage detection circuit that detects an output voltage of the rectifying/smoothing circuit; and a control circuit that turns on and off the switching element based on an output voltage signal from the output voltage detection circuit. | 09-17-2009 |
| 20090230877 | DISCHARGE LAMP LIGHTING APPARATUS - A discharge lamp lighting apparatus is mounted on a single circuit board. The apparatus converts a direct current into an alternating current, applies voltages of opposite phases to both ends of a discharge lamp. The apparatus includes two resonant circuits. Each of the resonant circuits includes a transformer having a primary winding and a secondary winding, a resonant reactor, and resonant capacitors. Output terminals of the two resonant circuits are connected to the ends of the discharge lamp, to apply the voltages of opposite phases to the ends of the discharge lamp, respectively. Resonant characteristics of the two resonant circuits are equalized with each other by determining values of the resonant reactors of the two resonant circuits according to values of stray capacitances determined by the lengths of high-voltage output lines extended from the two resonant circuits to the ends of the discharge lamp. | 09-17-2009 |
| 20090218598 | WARP-FREE SEMICONDUCTOR WAFER, AND DEVICES USING THE SAME - A semiconductor wafer to be diced into individual SBDs, HEMTs or MESFETs has a substrate with a main semiconductor region and counter semiconductor region formed on its opposite surfaces. The main semiconductor region is configured to provide the desired semiconductor devices. In order to counterbalance the warping effect of the main semiconductor region on the substrate, as well as to enhance the voltage strength of the devices made from the wafer, the counter semiconductor region is made similar in configuration to the main semiconductor region. The main semiconductor region and counter semiconductor region are arranged in bilateral symmetry as viewed in a cross-sectional plane at right angles with the substrate surfaces. | 09-03-2009 |
| 20090212326 | Hetero Field Effect Transistor and Manufacturing Method Thereof - A hetero field effect transistor includes: a first semiconductor layer; a second semiconductor layer formed on the first semiconductor layer to allow a generation of a two dimensional carrier gas layer of a first conductive type on a heterojunction interface between the first semiconductor layer and the second semiconductor layer; a third semiconductor layer formed on the second semiconductor layer and having an impurity introduced therein; a source electrode formed on the third semiconductor layer; a drain electrode formed on the third semiconductor layer and separated from the source electrode; a fourth semiconductor layer formed on or above the second semiconductor layer and has a second conductive type which is different from the first conductive type; and a gate electrode electrically connected on the fourth semiconductor layer. The fourth semiconductor layer is located adjacent to and surrounded by the third semiconductor layer. | 08-27-2009 |
| 20090212325 | Hetero Field Effect Transistor and Manufacturing Method Thereof - A hetero field effect transistor includes: a main semiconductor region including a first semiconductor layer and a second semiconductor layer formed thereon to allow a generation of a two-dimensional carrier gas layer of a first conductive type on a heterojunction interface therebetween; a source electrode formed on the main semiconductor region; a drain electrode formed on the main semiconductor region and separated from the source electrode; a third semiconductor layer of a second conductive type different from the first conductive type, the third semiconductor layer being formed on the second semiconductor layer and located between the source electrode and the drain electrode; and a gate electrode formed on the third semiconductor layer. A concave portion is formed in an upper surface of the second semiconductor layer at a region immediately below the gate electrode. | 08-27-2009 |
| 20090206363 | SOLID-STATE SWITCH CAPABLE OF BIDIRECTIONAL OPERATION - A monolithic switching device including a main semiconductor region configured to provide a current-carrying channel as in the form of two-dimensional electron gas. Disposed symmetrically on a surface of the main semiconductor region are two main electrodes to be coupled to an electric circuit for switching control, two gate electrodes for individually controlling current flow between the main electrodes through the current-carrying channel, and two diode-forming electrodes electrically connected respectively to the two main electrodes. The device operates in either Switch On Mode, Switch Off Mode, Negative Current Mode, or Positive Current Mode depending upon voltages applied to the two gate electrodes. | 08-20-2009 |
| 20090201700 | DC CONVERSION APPARATUS - A DC conversion apparatus comprises a first transformer, a second transformer, a parallel circuit having series circuits connected in parallel, one of the series circuits including a reactor and a primary winding of the first transformer, the other series circuit including a reactor and a primary winding of the second transformer, a conversion circuit converting a DC voltage of a DC power source into an AC voltage and outputting it to the parallel circuit, a first rectifying-smoothing circuit rectifying and smoothing a first voltage generated by a first secondary windings of the first transformer into a first DC output, and a second rectifying-smoothing circuit rectifying and smoothing a second voltage generated by a first secondary windings of the second transformer into a second DC output that is different from the first voltage. The second secondary windings of the first transformer are connected in parallel with the first secondary windings of the second transformer. | 08-13-2009 |
| 20090190382 | POWER FACTOR CORRECTING CONVERTER - A power factor correcting converter includes a rectifier to rectify an AC voltage of an AC power source into a pulsating voltage, a voltage converter having a switching element, to convert the pulsating voltage into a predetermined DC voltage with the switching element being turned on/off according to a control signal, an smoothing circuit to smooth the control signal, and a control signal generator to generate the control signal and change a switching frequency of the control signal according to an output from the smoothing circuit. | 07-30-2009 |
| 20090184671 | DISCHARGE LAMP LIGHTING APPARATUS AND SEMICONDUCTOR INTEGRATED CIRCUIT - A discharge lamp lighting apparatus has a switch circuit to convert a DC voltage into an AC voltage, a transformer, a discharge lamp, an error amplifier of a reference voltage and a voltage representative of a lamp current, a control circuit generating a PWM control signal, and a soft start circuit to carry out, at the start of a lighting operation, a soft start operation that gradually extends ON intervals of the PWM control signal to gradually increase the lamp current upto a target lamp current. The soft start circuit carries out the soft start operation in such a way that an increment in ON intervals of the PWM control signal in a period from when the discharge lamp lights to when the target lamp current is attained is smaller than that in a period from when the lighting operation starts to when the discharge lamp lights. | 07-23-2009 |
| 20090174978 | SWITCHING POWER SUPPLY DEVICE - A switching power supply device includes: a switching element connected through a primary winding of a transformer to an output end of an input rectifying/smoothing circuit that rectifies and smoothes an alternating current input voltage and outputs a direct current input voltage; an output rectifying/smoothing circuit that rectifies and smoothes a voltage induced in a secondary winding of the transformer and outputs a direct current output voltage; and a control circuit that controls ON and OFF of the switching element. The control circuit includes an overvoltage protection circuit that detects a voltage corresponding to the direct current output voltage and a voltage corresponding to the alternating current input voltage, outputs an overvoltage operation prohibition signal for prohibiting ON and OFF operations of the switching element when the voltage corresponding to the direct current output voltage rises to a first threshold value or more, and releases the overvoltage operation prohibition signal when the alternating current input voltage drops and the voltage corresponding to the alternating current input voltage falls down below a second threshold value. | 07-09-2009 |
| 20090173995 | TRENCH SEMICONDUCTOR DEVICE OF IMPROVED VOLTAGE STRENGTH, AND METHOD OF FABRICATION - A trench IGBT is disclosed which includes a semiconductor substrate having formed therein a set of cell trenches formed centrally and a set of annular guard trenches concentrically surrounding the cell trenches. The cell trenches receive cell trench conductors via cell trench insulators for providing IGBT cells. The guard trenches receive guard trench conductors via guard trench insulators for enabling the IGBT to withstand higher voltages through mitigation of field concentrations. Capacitive coupling conductors overlie the guard trench conductors via a dielectric layer, each for capacitively coupling together two neighboring ones of the guard trench conductors. The capacitive coupling conductors are easily adjustably variable in shape, size and placement relative to the guard trench conductors for causing the individual guard trench conductors to possess potentials for an optimal contour of the depletion layer. | 07-09-2009 |
| 20090167411 | NORMALLY-OFF ELECTRONIC SWITCHING DEVICE - A device capable of bidirectional on-off switching control of an electric circuit. Included is a normally-on HEMT connected between a pair of terminals of the device. A normally-off MOSFET of relatively low antivoltage strength is connected between the HEMT and one of the pair of terminals, and another similar MOSFET between the HEMT and the other of the terminal pair. A diode is connected in inverse parallel with each MOSFET, and two other diodes are connected between the gate of the HEMT and the pair of terminals respectively. The switching device as a whole is normally off. | 07-02-2009 |
| 20090166809 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURE - A reliable semiconductor device is provided which comprises lower and upper IGBTs | 07-02-2009 |
| 20090166678 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device | 07-02-2009 |
| 20090159925 | BIDIRECTIONAL ELECTRONIC SWITCH - A main semiconductor region grown on a substrate has formed on its surface a pair of main electrodes spaced from each other, a gate electrode between the main electrodes, and a pair of diode-forming electrodes spaced farther away from the gate electrode than are the main electrodes. Making ohmic contact with the main semiconductor region, the pair of main electrodes serve both as drain or source of a HEMT switch and as cathodes of a pair of Schottky diodes integrated with the HEMT switch. Both gate electrode and diode-forming electrodes are in Schottky contact with the main semiconductor region. | 06-25-2009 |
| 20090146932 | APPARATUS FOR DRIVING LIGHT EMITTING ELEMENTS AND ELECTRONIC APPLIANCE EMPLOYING THE APPARATUS - An apparatus for driving light emitting elements includes a constant-current driver arranged for each of arrays of light emitting elements including a constant-current drive element and a current regulator; a first selector configured to select one having a highest signal level from among control signals of the constant-current drivers and output the selected control signal; a second selector configured to select a lowest one from among output voltages of the constant-current drivers and output a signal representative of the selected output voltage; a differential amplifier configured to output an amplified differential signal that is obtained by amplifying a difference between the signals output from the first and second selectors; and a power source circuit configured to control, according to the amplified differential signal, a voltage supplied to a second end of each of the arrays of light emitting elements. | 06-11-2009 |
| 20090140289 | SEMICONDUCTOR DEVICE - Each of first base regions of sequentially layered first IGBT and second IGBT has a peripheral section in the vicinity of the side face of the semiconductor substrate. Each of the IGBTs includes a P-type peripheral base region that is adjacent to the peripheral section of the first base region of the N-type to form a diode and a diode electrode that is formed on an upper face of the peripheral section of the first base region, thereby electrically connecting the diode electrode and a collector electrode of each of the IGBTs. When the semiconductor device is ON, current flows at the center side of the semiconductor substrate separated from the side face. When current in a reverse direction is generated when the semiconductor device is OFF, current in a reverse direction flows in the vicinity of the side face of the semiconductor substrate. | 06-04-2009 |
| 20090128049 | DISCHARGE LAMP LIGHTING APPARATUS - A discharge lamp lighting apparatus includes a switch circuit for DC/AC converting, a discharge lamp connected to a secondary winding of a transformer, a current detector detecting an AC output current of the discharge lamp, an error amplifier outputting an error signal to a detected current, a control circuit generating control signals that turn on/off the switching elements in such a way as to control the AC output current at a predetermined value, and a time division signal generator generating a time division signal at the start of an ON/OFF operation of the switching elements, wherein the time division signal delays a change in a burst dimming signal or has a predetermined inclination on the burst dimming signal. The error amplifier changes the error signal according to the time division signal from the time division signal generator. | 05-21-2009 |
| 20090122581 | ALTERNATING CURRENT POWER SUPPLY DEVICE AND INTEGRATED CIRCUIT FOR ALTERNATING CURRENT POWER SUPPLY DEVICE - An alternating current power supply device is provided with switch elements Q | 05-14-2009 |
| 20090121248 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND PLANAR LIGHT SOURCE - A semiconductor light emitting device includes: a base portion having a concave portion formed in one of major surfaces thereof; and a light emitting element mounted on a bottom surface of the concave portion of the base portion. The base portion comprises a side wall portion that surrounds the light emitting element. The light emitting element is covered with a resin portion filled in the concave portion. At least a part of an upper surface of the resin portion is positioned closer to the bottom surface of the concave portion than an upper surface of the side wall portion. | 05-14-2009 |
| 20090121247 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a base portion having a concaved portion; a light emitting element provided in the concaved portion; a resin filled in the concaved portion; and a phosphor contained resin layer containing a wave converting substance and provided to close an opening portion of the concaved portion. The phosphor contained resin layer has a lower thermal expansion coefficient than the resin filled in the concaved portion. | 05-14-2009 |
| 20090121237 | LED ARRAY FOR MICRODISPLAYS OR LIKE APPLICATIONS, AND METHOD OF FABRICATION - An array of LEDs are grown by epitaxy on row-connecting conductor strips extending in parallel spaced relationship to one another on the surface of a semiconductor substrate and are thereby electrically interconnected in rows. The row-connecting conductor strips are formed by ion implantation of a p-type dopant into parts of an n-type silicon substrate. Column-connecting conductor strips extend over the light-emitting surfaces of the LEDs for electrically interconnecting them in columns. The LEDs are lit up individually by voltage application between one of the row-connecting conductor strips and one of the column-connecting conductor strips. | 05-14-2009 |
| 20090121217 | NITRIDE COMPOUND SEMICONDUCTOR DEVICE INCLUDING ORGANIC SEMICONDUCTOR LAYER UNDER GATE ELECTRODE - A nitride compound semiconductor device includes a semiconductor layer including a group III nitride compound semiconductor, source and drain electrodes provided on the semiconductor layer, an insulating film provided on the semiconductor layer between the source electrode and the drain electrode, an organic semiconductor layer in contact with the semiconductor layer at an opening provided for the insulating film, and a gate electrode provided on the organic conductive layer at the opening. | 05-14-2009 |
| 20090103338 | SWITCHING POWER SOURCE APPARATUS - A switching power source apparatus includes a switching element connected through a primary winding of a transformer to a voltage terminal of a DC input voltage, a rectifying-smoothing circuit to rectify and smooth a voltage induced by a secondary winding of the transformer and provide a DC output voltage, a control circuit for controlling ON/OFF of the switching element, and a delay circuit to generate a predetermined delay time. The control circuit detects the DC input voltage, starts a switching operation of the switching element if the DC input voltage has increased to or above a threshold value, and stops the switching operation of the switching element if the DC input voltage is lower than the threshold value and that a period during which the DC input voltage is continuously lower than the threshold value has reached the predetermined delay time. | 04-23-2009 |
| 20090103335 | OVERCURRENT-PROTECTED SWITCHING-MODE POWER SUPPLY - A DC-to-DC converter having an active switch connected between a pair of DC input terminals via the primary winding of a transformer whose secondary winding is connected to a pair of DC output terminals via a rectifying and smoothing circuit. Operating under the control of an output voltage detector circuit, a switch control signal generator rapidly turns the active switch on and off so as to keep the DC output voltage constant. For overcurrent protection, a current detect resistor is connected in series with the active switch for providing an uncorrected current detect signal indicative of the current flowing through the active switch. An overcurrent protector generates, in response to a clocked ramp voltage, a correction voltage which builds up with time during each conducting period of the active switch. The correction voltage is subtracted from the uncorrected current detect signal to provide a corrected current detect signal. The switch control signal generator is caused to turn off the active switch when the corrected current detect signal rises to an overcurrent threshold. | 04-23-2009 |
| 20090102445 | SWITCHING DC-DC CONVERTER AND OSCILLATOR - A switching DC-DC converter includes: an output voltage detecting unit configured to detect a DC output voltage; an error amplifying unit configured to compare the detected output voltage and a reference voltage and configured to supply an amplified error signal between the detected output voltage and the reference voltage to the pulse width modulating unit; and a single oscillating unit connected to an output of the output voltage detecting unit and an output of the error amplifying unit and operable on a first oscillating mode and a second oscillation mode. The oscillating unit on the first oscillating mode controls a switching frequency of the power switch based on the detected output voltage. The oscillating unit on the second oscillating mode controls the switching frequency of the power switch based on the amplified error signal. | 04-23-2009 |
| 20090085146 | SEMICONDUCTOR DEVICE - A semiconductor device | 04-02-2009 |
| 20090085116 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device | 04-02-2009 |
| 20090079085 | SEMICONDUCTOR DEVICE - A semiconductor device including a semiconductor section including a semiconductor element and a recess formed in one of main surfaces and a metallic member at least a part of which is embedded in the recess. A void is formed in a region of the metallic member corresponding to the recess. | 03-26-2009 |
| 20090057720 | Field-Effect Semiconductor Device, and Method of Fabrication - A HEMT-type field-effect semiconductor device has a main semiconductor region comprising two layers of dissimilar materials such that a two-dimensional electron gas layer is generated along the heterojunction between the two layers. A source and a drain electrode are placed in spaced positions on a major surface of the main semiconductor region. Between these electrodes, a gate electrode is received in a recess in the major surface of the main semiconductor region via a p-type metal oxide semiconductor film whereby a depletion zone is normally created in the electron gas layer, with a minimum of turn-on resistance and gate leak current. | 03-05-2009 |
| 20090052216 | LEVEL SHIFT CIRCUIT AND POWER SUPPLY DEVICE - In a level shift circuit including: an inverter circuit having a series circuit of a Pch-type transistor and an Nch-type transistor, which re connected between electrodes of a floating power supply; and a transistor Q | 02-26-2009 |
| 20090045851 | DEVICE FOR DRIVING SWITCHING ELEMENTS - A device for driving switching elements is provided with a potential detector | 02-19-2009 |
| 20090045757 | DISCHARGE LAMP LIGHTER - A discharge lamp lighter has an abnormality detecting circuit | 02-19-2009 |
| 20090039800 | AC POWER SUPPLY SYSTEM FOR BALANCED ENERGIZATION OF A PLURALITY OF LOADS - A gas-discharge lamp igniter is disclosed which has a group of gas-discharge lamps, such as those for LCD backlighting, connected in parallel with one another between the pair of outputs of an AC power supply. Provided one for each lamp to be energized, current-balancing transformers have their secondary windings serially interconnected. The lamps are connected to one of the pair of outputs of the AC power supply via the respective primary windings of the current-balancing transformers and the serial connection of the secondary windings thereof. | 02-12-2009 |
| 20090039795 | DISCHARGE LAMP LIGHTING APPARATUS - A discharge lamp lighting apparatus includes a plurality of discharge lamps | 02-12-2009 |
