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SAMSUNG
Gyeonggi-do, KR
| SAMSUNG Patent applications | ||
| Patent application number | Title | Published |
|---|---|---|
| 20090146181 | INTEGRATED CIRCUIT SYSTEM EMPLOYING DIFFUSED SOURCE/DRAIN EXTENSIONS - An integrated circuit system that includes: providing a PFET device including a doped epitaxial layer; and forming a source/drain extension by employing an energy source to diffuse a dopant from the doped epitaxial layer. | 06-11-2009 |