SAMSUNG LED CO., LTD. Patent applications |
Patent application number | Title | Published |
20130242576 | LIGHT EMITTING APPARATUS - Provided is a light emitting apparatus including a body unit, a control unit configured to control a light emitting diode (LED), a heat emitting unit configured to emit heat of the LED, and an assembly unit configured to mutually connect the control unit and the heat emitting unit to the body unit. According to the foregoing structure, the body unit, the control unit, and the heat emitting unit may be connected through a single assembly process, thereby improving assembly efficiency. | 09-19-2013 |
20120320262 | DEVICE, SYSTEM, AND METHOD FOR CONTROLLING LIGHT SOURCE TO CAPTURE IMAGE - A light source control device according to the present invention includes an image capturing unit for capturing an image by using light emitted from a light source and reflected or scattered on a subject; a user interface for receiving information regarding optical characteristics of the light source; a control unit for generating a light source control signal for setting a lighting state of the light source by using the received information regarding optical characteristics; and a wireless communication module for transmitting the generated light source control signal to the light source. | 12-20-2012 |
20120319598 | APPARATUS FOR AND METHOD OF CONTROLLING DIMMING OF STREET LAMP - A dimming controlling apparatus including: a lighting driving unit for driving a lighting appliance; a power supply unit for supplying power required to drive the lighting appliance; a storage unit for storing a plurality of dimming profiles including time zones for driving the lighting appliance and dimming levels in accordance to the time zones; and a controller for controlling the lighting driving unit and the power supply unit by using the dimming profiles. An operating time of the lighting appliance is divided into a plurality of time zones, and dimming profiles are generated to include an intensity of illumination for driving the lighting appliance in each of the plurality of time zones and each of the time zones. | 12-20-2012 |
20120307492 | OMNIDIRECTIONAL LIGHT EMITTING DEVICE LAMP - An omnidirectional semiconductor light emitting device lamp has a light distribution characteristic having a large range similar to that of a general incandescent lamp. The semiconductor light emitting device lamp includes a light emitting device for emitting light in all directions and reflection plates arranged at a front surface and a lateral surface of the light emitting device. The light emitted from the light emitting device is reflected from the reflection plate located at the front side and the reflection plate located at the lateral side and emitted to a rear side of the light emitting device. A reflection film is formed on all exposed portions of a surface of the substrate on which the light emitting device is mounted. | 12-06-2012 |
20120286309 | SEMICONDUCTOR LIGHT EMITTING DIODE CHIP AND LIGHT EMITTING DEVICE USING THE SAME - A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film. | 11-15-2012 |
20120249779 | APPARATUS FOR INSPECTING LIGHT EMITTING DIODE AND INSPECTING METHOD USING SAID APPARATUS - A light emitting diode (LED) inspection apparatus includes at least one LED including a phosphor applied on an emission surface, a first lighting unit to emit visible light to the LED, a second lighting unit to emit ultraviolet (UV) light to the LED, a photographing unit to generate at least one first image data by photographing the visible light reflected from the LED and to generate at least one second image data by photographing the UV light reflected from the LED, and a determination unit to determine a defect in appearance and emission characteristics of the LED using the at least one first image data and second image data. | 10-04-2012 |
20120235584 | AC DRIVEN LIGHT EMITTING DEVICE - An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K≧3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K−1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC. | 09-20-2012 |
20120223660 | WHITE LIGHT EMITTING DEVICE - A white light emitting device includes a structure for emitting white light having at least four wavelengths by using two or less LEDs, where the LEDs include a blue/green LED emitting blue and green wavelengths of light. The device also includes means for emitting red wavelength of light. | 09-06-2012 |
20120223326 | LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode. | 09-06-2012 |
20120211795 | SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING SUBSTRATE HAVING PROTECTION LAYERS AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same. | 08-23-2012 |
20120211789 | LIGHT EMITTING DEVICE PACKAGE - There is provided a light emitting device package, including: a package body; a first lead frame coupled to the package body and including a first recess having an exposed side, the first recess having a chip mounting area formed to be downwardly recessed therein, wherein at least a part of a bottom surface of the chip mounting area is exposed to a bottom surface of the package body; a second lead frame coupled to the package body so as to have a predetermined distance from the first lead frame and including a second recess having an exposed side opposed to the exposed side of the first recess; and at least one light emitting device mounted on the chip mounting area of the first lead frame and electrically connected with the first and second lead frames. | 08-23-2012 |
20120211780 | LED PACKAGE MODULE - An LED package module according to an aspect of the invention may include: a substrate having predetermined electrodes thereon; a plurality of LED chips mounted onto the substrate, separated from each other at predetermined intervals, and electrically connected to the electrodes; a first color resin portion molded around at least one of the plurality of LED chips; a second color resin portion molded around all of the LED chips except for the LED chip around which the first color resin portion is molded, and having a different color from the first color resin portion; and a third color resin portion encompassing both the first color resin portion and the second color resin portion and having a different color from the first color resin portion and the second color resin portion. | 08-23-2012 |
20120193604 | WAVELENGTH CONVERSION PLATE AND LIGHT EMITTING DEVICE USING THE SAME - Provided is a wavelength conversion plate having excellent luminous efficiency of a wavelength-converted light. The wavelength conversion plate includes a dielectric layer with nano pattern, a metal layer formed inside the nano pattern, and a wavelength conversion layer formed on the metal layer and having quantum dot or phosphor which wavelength-converts an excitation light to generate a wavelength-converted light. | 08-02-2012 |
20120190142 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance. | 07-26-2012 |
20120181570 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: a light-transmissive substrate including opposed first and second main planes and having prominences and depressions formed on at least one of the first and second main planes thereof; a light emitting structure formed on the first main plane of the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive layer; a first electrode structure connected to the first conductive semiconductor layer; a second electrode structure connected to the second conductive semiconductor layer. | 07-19-2012 |
20120175665 | LIGHT-EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A light-emitting device package includes: a package body on which a mount portion and a terminal portion are disposed; a light-emitting device chip that is mounted on the mount portion; and a bonding wire that electrically connects an electrode of the light-emitting device chip and the terminal portion. The bonding wire includes a rising portion that rises from the light-emitting device chip to a loop peak, and an extended portion that connects the loop peak and the terminal portion. A first kink portion, which is bent in a direction intersecting a direction in which the rising portion rises, is disposed on the rising portion. | 07-12-2012 |
20120155115 | LIGHT EMITTING MODULE AND BACKLIGHT UNIT USING THE SAME - There is provided a light emitting module including: a circuit board; at least one light source part disposed on the circuit board; a wavelength conversion part coupled with the circuit board, the wavelength conversion part covering alight emitting surface of the light source part and converting a wavelength of light; and a coupling part coupling the wavelength conversion part to the circuit board. | 06-21-2012 |
20120153872 | LIGHT EMITTING MODULE AND METHOD OF MANUFACTURING THE SAME - There is provided a light emitting module and a method of manufacturing the same. The light emitting module includes a circuit board, and a plurality of light emitting devices disposed on the circuit board, wherein the plurality of light emitting devices include at least one light emitting device having a driving voltage less than an average driving voltage of the plurality of light emitting devices and at least one of light emitting devices adjacent thereto having a driving voltage greater than the average driving voltage. In the light emitting module, variations in driving voltages between light emitting modules that may be caused due to driving voltage dissipation in a light emitting device may be minimized. | 06-21-2012 |
20120142127 | LIGHT EMITTING DIODE PACKAGE WITH A PHOSPHOR SUBSTRATE - Provided is a light emitting diode (LED) package including a phosphor substrate; an LED chip mounted on the phosphor substrate; a circuit board mounted on the other region of the phosphor substrate excluding the region where the LED chip is mounted; an electrode connection portion for electrically connecting the LED chip and the circuit board; and a sealing member that covers the LED chip, the circuit board, and the phosphor substrate. | 06-07-2012 |
20120129289 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced. | 05-24-2012 |
20120127705 | LIGHT EMITTING MODULE - There is provided a light emitting module including: a printed circuit board; a plurality of light emitting diode chips disposed at a distance from one another on a conductive pattern formed on a top of the printed circuit board; and a connector formed on a bottom of the printed circuit board and electrically connected to the plurality of light emitting diode chips. The light emitting diode chips and the connector are optimally arranged to ensure that the light emitting module is suitably utilized as a high-density linear light source including a great number of light emitting diode chips and emits light outward with minimum loss. | 05-24-2012 |
20120123591 | APPARATUS AND METHOD FOR AUTOMATICALLY MIXING PHOSPHOR - An apparatus and method for automatically mixing a phosphor are provided, which are capable of automatically supplying accurate quantities of a phosphor and silicon to a mixing container using a phosphor supply unit and a silicon supply unit. | 05-17-2012 |
20120122255 | WHITE LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - Provided is a white LED including a reflector cup; an LED chip mounted on the bottom surface of the reflector cup; transparent resin surrounding the LED chip; a phosphor layer formed on the transparent resin; and a light transmitting layer that is inserted into the surface of the phosphor layer so as to form an embossing pattern on the surface, the light transmitting layer transmitting light, incident from the phosphor layer, in the upward direction. | 05-17-2012 |
20120122250 | APPARATUS AND METHOD FOR MANUFACTURING LED PACKAGE - An apparatus for manufacturing an light emitting diode (LED) package, includes: a heating unit heating an LED package array in a lead frame state in which a plurality of LED packages are installed to be set in an array on a lead frame; a testing unit testing an operational state of each of the LED packages in the LED package array by applying a voltage or a current to the LED package array heated by the heating unit; and a cutting unit cutting only an LED package determined to be a functional product or an LED package determined to be a defective product from the lead frame to remove the same according to the testing results of the testing unit. | 05-17-2012 |
20120119187 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer. | 05-17-2012 |
20120107976 | LED PACKAGE AND METHOD OF MANUFACTURING THE SAME - The present invention relates to light emitting diode (LED) packages and methods of manufacturing the same, and more particularly, to an LED package and a method of manufacturing the same that can reduce a variation of color coordinates of mass-produced LED packages. | 05-03-2012 |
20120105836 | APPARATUS FOR MEASURING OPTICAL PROPERTIES OF LED PACKAGE - An apparatus for measuring the optical properties of an LED package includes: a light detection unit detecting light output from a plurality of LED packages of an LED package array in order to measure the optical properties of each of the LED packages; a mounting unit fixing the LED package array thereon when the optical properties thereof are measured; and a voltage application unit applying a driving voltage to the individual LED packages in the LED package array when the optical properties of the LED packages are measured. | 05-03-2012 |
20120086016 | GROUP III NITRIDE SEMICONDUCTOR AND GROUP III NITRIDE SEMICONDUCTOR STRUCTURE - There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity. | 04-12-2012 |
20120074449 | QUANTUM DOT-METAL OXIDE COMPLEX, METHOD OF PREPARING THE SAME, AND LIGHT-EMITTING DEVICE COMPRISING THE SAME - Provided is a quantum dot-metal oxide complex including a quantum dot and a metal oxide forming a 3-dimensional network with the quantum dot. In the quantum dot-metal oxide complex, the quantum dot is optically stable without a change in emission wavelength band and its light-emitting performance is enhanced. | 03-29-2012 |
20120068154 | GRAPHENE QUANTUM DOT LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A graphene quantum dot light emitting device includes: a first graphene; a graphene quantum dot layer disposed on the first graphene and including a plurality of graphene quantum dots; and a second graphene disposed on the graphene quantum dot layer. A method of manufacturing a graphene quantum dot light emitting device includes: forming a first graphene doped with a first dopant; forming a graphene quantum dot layer including a plurality of graphene quantum dots on the first graphene; and forming a second graphene doped with a second dopant on the graphene quantum dot layer. | 03-22-2012 |
20120068152 | GRAPHENE LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed. | 03-22-2012 |
20120056150 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE PATTERN - A nitride semiconductor light-emitting device with an electron pattern that applies current uniformly to an active layer to improve light emission efficiency is provided. The nitride semiconductor light-emitting device includes multiple layers of a substrate, an n-type nitride layer, an active layer of a multi-quantum-well structure, and a p-type nitride layer. The nitride semiconductor light-emitting device further includes a p-electrode pattern and an n-electrode pattern. The p-electrode pattern includes one or more p-pads disposed on the p-type nitride layer, and one or more p-fingers extending from the p-pads. The n-electrode pattern includes one or more n-pads disposed on an exposed region of the n-type nitride layer to correspond to the p-pads, and one or more n-fingers extending from the n-pads. The n-fingers have identical resistance, and the p-fingers have identical resistance to improve current spreading to the active layer. | 03-08-2012 |
20120043557 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY - The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device. | 02-23-2012 |
20120031338 | SUSCEPTOR AND APPARATUS FOR CVD WITH THE SUSCEPTOR - A susceptor and an apparatus for chemical vapor deposition (CVD) are provided. The susceptor includes a main body configured to include a mounting unit having an uneven plane, and a substrate supporting unit configured to be seated on the mounting unit. A bottom surface of the substrate supporting unit has a shape corresponding to a shape of the mounting unit, and the mounting unit includes a gas discharge hole to discharge gas to the substrate supporting unit. Accordingly, accurate positioning of the substrate supporting unit may not be required when the substrate supporting unit is being returned. Also, the vapor deposition may be stably performed. | 02-09-2012 |
20120018734 | Light-emitting devices and methods of manufacturing the same - Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer. | 01-26-2012 |
20120013434 | WIRELESS SENSING MODULE, WIRELESS LIGHTING CONTROLLING APPARATUS AND WIRELESS LIGHTING SYSTEM - Provided is a wireless sensing module, a wireless lighting controlling apparatus, and a wireless lighting system. The wireless sensing module may include a motion sensor to sense a motion, an illumination intensity sensor to sense an intensity of illumination, and a first wireless communication unit to generate and transmit a wireless signal that includes a motion sensing signal and an illumination intensity sensing signal, and that complies with a predetermined communication regulation. The wireless lighting controlling apparatus may include a second wireless communication unit to receive a wireless signal from a first wireless communication unit, and to restore a sensing signal, a sensing signal analyzing unit to analyze the sensing signal, and an operation controller to perform a predetermined control based on a result of the analysis. The wireless lighting system may include the wireless sensing module and the wireless lighting controlling apparatus. | 01-19-2012 |
20120007525 | LIGHTING APPARATUS - Provided is a lighting apparatus that may form and control a multi-zone of a plurality of lighting devices connected to a wireless network. The lighting apparatus may include a plurality of devices including a plurality of lighting devices included in a network set in advance, a coordinator to manage the network, a remote controller to control a multi-zone that is included in the network and that performs grouping of the plurality of lighting devices into a plurality of groups. | 01-12-2012 |
20120007499 | AC DRIVEN LIGHT EMITTING DEVICE - An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K≧3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K−1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC. | 01-12-2012 |
20120001209 | LIGHT EMITTING DIODE MODULE FOR LINE LIGHT SOURCE - A light emitting diode module for a line light source includes a circuit board having a wire pattern formed thereon and a plurality of LED chips directly mounted and disposed in a longitudinal direction on the circuit board and electrically connected to the wire pattern. The module also includes a reflecting wall installed on the circuit board to surround the plurality of LED chips, reflecting light from the LED chips. The module further includes a heat sink plate underlying the circuit board to radiate heat generated from the LED chip. | 01-05-2012 |
20110315957 | LIGHT EMITTING DEVICE - There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer. | 12-29-2011 |
20110312109 | LIGHT EMITTING DIODE PACKAGE HAVING ANODIZED INSULATION LAYER AND FABRICATION METHOD THEREFOR - An LED package having an anodized insulation layer which increases heat radiation effect to prolong the lifetime LEDs and maintains high luminance and high output, and a method therefor. The LED package includes an Al substrate having a reflecting region and a light source mounted on the substrate and connected to patterned electrodes. The package also includes an anodized insulation layer formed between the patterned electrodes and the substrate and a lens covering over the light source of the substrate. The Al substrate provides superior heat radiation effect of the LED, thereby significantly increasing the lifetime and light emission efficiency of the LED. | 12-22-2011 |
20110309915 | CONTROLLER FOR CONTROLLING ILLUMINATION - Disclosed is a controller for controlling an illumination device participating in a wireless network by setting a scene of illumination according to a configurable schedule. The controller for controlling an illumination device includes: a control unit controlling an illumination scene of an illumination device selected from among a plurality of illumination devices existing in a pre-set network according to a pre-set schedule table; a frame generation unit generating a frame for controlling the illumination scene of the corresponding illumination device under the control of the control unit; and a communication unit transmitting the frame generated by the frame generation unit to the selected illumination device under the control of the controller. | 12-22-2011 |
20110300652 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer. | 12-08-2011 |
20110298382 | LIGHT EMITTING DIODE DRIVING CIRCUIT AND LIGHT EMITTING DIODE ARRAY DEVICE - There is provided an LED driving circuit including: at least one ladder network circuit including: (n+1) number of first branches connected in parallel with one another by n number of first middle junction points between a first junction point and a second junction point, where n denotes an integer satisfying n≧2, (n+1) number of second branches connected in parallel with one another by n number of second middle junction points between the first junction point and the second junction point, the (n+1) number of second branches connected in parallel with the first branches; and n number of middle branches connecting the first and second middle junction points of an identical m sequence to each other, respectively, wherein each of the first and second, and middle branches comprises at least one LED device. | 12-08-2011 |
20110298379 | SYSTEM OF CONTROLLING PRODUCT DISPLAY LIGHTING - There is provided a system of controlling product display lighting capable of controlling brightness levels and/or colors of illuminating light suitable for corresponding products according to characteristics of products, such as kinds or colors of products. The system of controlling product display lighting may include an information input unit acquiring information on products; a coordinator determining brightness levels and colors of illuminating light provided to the products according to the information on the products; a light source driver generating light source driving signals for outputting the determined brightness levels and colors of illuminating light in the coordinator; and a light source unit outputting illumination light having the brightness levels and colors of illuminating light determined in the coordinator by the light source driving signals. | 12-08-2011 |
20110297992 | SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit. | 12-08-2011 |
20110292683 | BACKLIGHT UNIT - There is provided a backlight unit. The backlight unit includes a light guiding plate, a light source module including a substrate provided with a circuit wiring and a plurality of light emitting diode (LED) blocks each including one or more LED mounted on the substrate to be positioned vertically with respect to the substrate, the one or more LED being disposed to face a side surface of the light guiding plate, a bottom chassis including a base and a sidewall upwardly extending from a circumference of the base, and accommodating the light source module and the light guiding plate in such a manner that the one or more LED is disposed to be adjacent to the sidewall, and a driving unit controlling a current signal applied to each of the plurality of LED blocks to thereby control brightness for each LED block. | 12-01-2011 |
20110292302 | LIGHT EMITTING DEVICE PACKAGE, LIGHT SOURCE MODULE, BACKLIGHT UNIT, DISPLAY APPARATUS, TELEVISION SET, AND ILLUMINATION APPARATUS - A light source module, a backlight unit, a display apparatus, a television set, and an illumination apparatus are provided. The light source module includes: one or more light source units including a light emitting element emitting light when electricity is applied thereto; and an optical sheet disposed above the light source units and exhibiting bidirectional transmittance distribution function characteristics having first and second peaks at radiation angles less than 0° and greater than 0°. | 12-01-2011 |
20110291143 | LIGHT-EMITTING-DEVICE PACKAGE AND A METHOD FOR PRODUCING THE SAME - A light emitting device package includes: a substrate with a mounting surface; a light emitting device bonded to the mounting surface of the substrate; a light reflecting resin part containing a high reflective material, filled on the substrate around the light emitting device so as to extend in a space between the light emitting device and the substrate; and a packing resin part hermetically sealed to cover the light emitting device and the light reflection resin part. | 12-01-2011 |
20110279091 | METHOD FOR REDUCING STANDBY POWER AND WIRELESS DEVICE USING THE SAME - The present invention provides a wireless device and method for reducing standby power. The method for reducing standby power of the wireless device includes the steps of: charging a charging battery with power supplied from an AC commercial power source in a normal mode of the wireless device, blocking the power of the AC commercial power source and converting an operation state of the wireless device so that the wireless device is in a standby mode when an operation-off signal used for turning off a predetermined device is transmitted from an outside. In this case, the wireless device receives the power with which the charging battery has been charged. In a standby mode, the wires device is periodically converted to be in a normal mode to transmit an operation state inquiry signal to the outside, so that it is possible to normally control the predetermined device. | 11-17-2011 |
20110273083 | LIGHT-EMITTING DIODE DEVICE GENERATING LIGHT OF MULTI-WAVELENGTHS - The present invention relates to a method of manufacturing an LED device which emits light of multi-wavelengths. The invention also relates to a method of manufacturing LED devices which emit light of high quality from throughout the whole surface in a uniform manner. In particular, utilizing the manufacturing method of LED devices which emit light of multi-wavelengths makes it possible to produce LED devices of high quality in a simple and cost-efficient way, not by using adhesives, but by a sputtering or PLD method. In addition, since the characteristics of the desired emitted light can be controlled by controlling the amount and type of the phosphors during the manufacture of sputtering targets, high quality LED devices can be manufactured easily. | 11-10-2011 |
20110272706 | LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode. | 11-10-2011 |
20110266584 | WHITE LIGHT EMITTING DIODE WITH YELLOW, GREEN AND RED LIGHT EMITTING PHOSPHORS - Provided is a white light emitting diode (LED) including a blue LED chip; and yellow, green, and red light emitting phosphors that are coated on the blue LED chip at a predetermined mixing ratio and converts light, emitted from the blue LED chip, into white light. | 11-03-2011 |
20110263061 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING PATTERNED SUBSTRATE AND MANUFACTURING METHOD OF THE SAME - There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions. | 10-27-2011 |
20110249424 | LIGHT EMITTING DEVICE PACKAGE, BACKLIGHT UNIT, DISPLAY DEVICE AND LIGHTING DEVICE - There is provided a light emitting device package including: a package body providing a chip mounting area and including first and second lead terminals; an LED chip mounted on the chip mounting area and electrically connected to the first and second lead terminals; a groove portion disposed around the LED chip in the chip mounting area; and a wavelength conversion portion formed of a resin containing a wavelength conversion material with which to enclose the LED chip and having an outer shape defined by the groove portion. | 10-13-2011 |
20110242437 | WHITE LIGHT EMITTING DEVICE AND WHITE LIGHT SOURCE MODULE USING THE SAME - A white light emitting device including: a blue light emitting diode chip having a dominant wavelength of 443 to 455 nm; a red phosphor disposed around the blue light emitting diode chip, the red phosphor excited by the blue light emitting diode chip to emit red light; and a green phosphor disposed around the blue light emitting diode chip, the green phosphor excited by the blue light emitting diode chip to emit green light, wherein the red light emitted from the red phosphor has a color coordinate falling within a space defined by four coordinate points (0.5448, 0.4544), (0.7079, 0.2920), (0.6427, 0.2905) and (0.4794, 0.4633) based on the CIE 1931 chromaticity diagram, and the green light emitted from the green phosphor has a color coordinate falling within a space defined by four coordinate points (0.1270, 0.8037), (0.4117, 0.5861), (0.4197, 0.5316) and (0.2555, 0.5030) based on the CIE 1931 color chromaticity diagram. | 10-06-2011 |
20110241066 | SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME - There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer. | 10-06-2011 |
20110234555 | SWITCHING MODULE AND SWITCHING SYNCHRONIZATION SYSTEM - There are provided a switching module and a switching synchronization system. The switching module includes a plurality of first to n-th switching modules according to an exemplary embodiment of the present invention, wherein each of the first to n-th switching modules includes: a button unit that includes a plurality of switching buttons; a state display unit that includes a plurality of display lamps corresponding to each of the plurality of switching buttons in the button unit; a switch controller that controls the operation of the state display unit according to the operation of each of the plurality of switching buttons in the button unit; and a switch communication unit that transmits the wireless switching control signal including the switching control and provides the switching control signals included in the wireless switching control signals received to the switch controller. | 09-29-2011 |
20110221348 | SYSTEM AND METHOD FOR CONTROLLING LIGHTING - Disclosed herein are a system and a method for controlling lighting. In the lighting control system, one or more lighting devices are installed in a separate area within a building and a remote controller generates a scheduling data by setting lighting scenes at each time and controls the lighting of the corresponding lighting device via a short range wireless communication. In addition, the remote controller transmits the scheduling data to a remote server through a gateway and when the remote controller is not normally operated, the remote server controls the lighting device according to the scheduling data through the gateway. | 09-15-2011 |
20110211347 | PLANE LIGHT SOURCE AND LCD BACKLIGHT UNIT HAVING THE SAME - There are provided a plane light source and an LCD backlight unit having the same. A plane light source having a plurality of light emitting devices arranged in a light emitting device matrix having rows and columns at a substrate according to an aspect of the invention includes a first matrix having a plurality of light emitting devices arranged in rows and columns; and a second matrix having a plurality of light emitting devices arranged in rows and columns, each of the light emitting devices located within a quadrangle formed by four neighboring light emitting devices included in the first matrix, wherein a pitch S between one light emitting device included in the light emitting device matrix and another light emitting device most adjacent to the one light emitting device satisfies the following equation to obtain uniform luminance distribution at a position distant from a light emitting surface of the light emitting device by an optical length l, S.ltoreq.12.times.tan(.theta.2+.alpha.), Equation where—.pi./18.ltoreq..alpha..ltoreq..pi./18 is satisfied, and .theta. is an orientation angle of the light emitting device. | 09-01-2011 |
20110210311 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes: a substrate; a plurality of light emitting cells arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light; an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part having a red light conversion material and a green light conversion part having a green light conversion material. | 09-01-2011 |
20110199787 | LED PACKAGE AND A BACKLIGHT UNIT UNIT COMPRISING SAID LED PACKAGE - A light emitting diode (LED) package includes: a main body mounted on a substrate; a light emitting diode that is mounted in the main body and emits light; and a lead frame exposed to allow the main body to be selectively top-mounted or side-mounted. A backlight unit includes: a light guide plate configured to allow a light source to proceed to a liquid crystal panel; a light emitting diode (LED) mounted in a main body mounted on a substrate and generating a light source; and an LED package having a lead frame exposed to allow the main body to be selectively top-mounted or side-mounted, and being mounted on the light guide plate. | 08-18-2011 |
20110198652 | LOW RESISTANCE ELECTRODE AND COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME - A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process. | 08-18-2011 |
20110193060 | NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DIODE - A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer. | 08-11-2011 |
20110186815 | NITRIDE SEMICONDUCTOR DEVICE - There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough. | 08-04-2011 |
20110182085 | LED MODULE AND BACKLIGHT UNIT HAVING THE SAME - There is provided an LED module, including a bar type circuit substrate formed with at least one groove so as to have a reflecting cup; a plurality of LED chips disposed in the groove of the circuit substrate and linearly arranged in a longitudinal direction of the circuit substrate; and a phosphor film spaced apart from the LED chips and disposed on the circuit substrate to cover the entire groove. | 07-28-2011 |
20110157492 | SURFACE LIGHT SOURCE USING WHITE LIGHT EMITTING DIODES AND LIQUID CRYSTAL DISPLAY BACKLIGHT UNIT HAVING THE SAME - There is provided a surface light source using white light emitting diodes including: a plurality of white light emitting diodes arranged at a predetermined distance from one another, wherein the white light emitting diodes are arranged such that a light emitting diode unit defined by each of the white light emitting diodes and corresponding ones of the white light emitting diodes disposed at a closest distance from the each white light emitting diode has a central light amount ranging from 80% to 120% with respect to an average light amount of the white light emitting diodes. | 06-30-2011 |
20110122600 | SLIM TYPE BACKLIGHT UNIT WITH THROUGH-HOLE ADHESIVE HEAT DISSIPATING MEANS - A backlight unit of the invention is reduced in thickness, weight and manufacturing costs but improved in heat releasing efficiency. In the backlight unit, a flexible printed circuit board has at least one through hole perforated therein. An LED package is disposed on a top portion of the flexible printed circuit board corresponding to the through hole. The backlight unit of the invention employs the flexible printed circuit board in place of a metal printed circuit board as a means to conduct current to the LED package. This produces a slimmer and lighter backlight unit and also saves manufacturing costs. In addition, the LED package is directly bonded onto a bottom plate by a heat conducting adhesive, thereby ensuring heat generated from the LED package to be released more quickly. | 05-26-2011 |
20110116525 | SIDE LIGHT EMITTING TYPE SEMICONDUCTOR LASER DIODE HAVING DIELECTRIC LAYER FORMED ON ACTIVE LAYER - Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate, and a dielectric layer with a ridge structure formed on the p-light guide layer. | 05-19-2011 |
20110096528 | BACKLIGHT UNIT - There is provided a backlight unit. | 04-28-2011 |
20110084305 | NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DIODE - A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer. | 04-14-2011 |
20110065219 | LIGHT EMITTING DIODE PACKAGE, CIRCUIT BOARD FOR LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A circuit board for a light emitting diode package improved in heat radiation efficiency and a manufacturing method thereof. In a simple manufacturing process, insulating layers are formed by anodizing on a portion of a thermally conductive board body and plated with a conductive material. In the light emitting diode package, a board body is made of a thermally conductive metal. Insulating oxidation layers are formed at a pair of opposing edges of the board body. First conductive patterns are formed on the insulating oxidation layers, respectively. Also, second conductive patterns are formed in contact with the board body at a predetermined distance from the first conductive patterns, respectively. The light emitting diode package ensures heat generated from the light emitting diode to radiate faster and more effectively. Additionally, the insulating layers are formed integral with the board body by anodizing, thus enhancing productivity and durance. | 03-17-2011 |
20110053298 | VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat. | 03-03-2011 |
20110043100 | METHOD OF FORMING PHOSPHOR FILM AND METHOD OF MANUFACTURING LIGHT EMITTING DIODE PACKAGE INCORPORATING THE SAME - The invention relates to a method of forming a phosphor film and a method of manufacturing an LED package incorporating the same. The method of forming a phosphor film includes mixing phosphor and light-transmitting beads in an aqueous solvent such that the nano-sized light-transmitting beads having a first charge are adsorbed onto surfaces of phosphor particles having a second charge. The method also includes coating a phosphor mixture obtained from the mixing step on an area where the phosphor film is to be formed, and drying the coated phosphor mixture to form the phosphor film. The invention further provides a method of manufacturing an LED package incorporating the method of forming the phosphor film. | 02-24-2011 |
20110037086 | NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Al | 02-17-2011 |
20110033965 | VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat. | 02-10-2011 |
20110031521 | COMPOSITE PHOSPHOR POWDER, LIGHT EMITTING DEVICE USING THE SAME AND METHOD FOR MANUFACTURING COMPOSITE PHOSHPOR POWDER - The invention provides a high quality composite phosphor powder which ensures diversity in emission spectrum, color reproduction index, color temperature and color, a light emitting device using the same and a method for manufacturing the composite phosphor powder. The composite phosphor powder comprises composite particles. Each of the composite particles includes at least two types of phosphor particles and a light transmitting binder. The phosphor particles have different emission spectrums. In addition, the light transmitting binder is formed between the phosphor particles and binds them together. | 02-10-2011 |
20110026241 | BACKLIGHT UNIT - Provided is a backlight unit including a plurality of light emitting diodes (LEDs) that emit light; a plurality of LED modules having a printed circuit board (PCB) which supports and drives the plurality of LEDs; a plurality of optical sheets that are attached to the top surfaces of the respective LED modules; and a plurality of heat radiating pads that are attached to the rear surfaces of the respective LED modules. | 02-03-2011 |
20110012533 | COLOR LED DRIVER - Disclosed herein is a color LED driver, which is capable of being implemented by a compact structure without a feedback structure and accompanying a small size and low cost, by directly connecting a negative temperature coefficient (NTC) thermistor to a driving current path of a color LED applied to an LCD backlight to compensate a characteristic variation of the LED due to a variation in a temperature. The color LED driver includes a driving constant voltage source | 01-20-2011 |
20110008924 | METHOD OF FORMING PATTERN ON GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask. | 01-13-2011 |
20110007228 | WHITE LIGHT EMITTING DEVICE - A white light emitting device capable of expanding the wavelength range of a blue LED used for realizing white light. The white light emitting device according to the present invention includes a blue LED and a mixture of orange phosphor and green phosphor disposed above the blue LED. | 01-13-2011 |
20110003412 | LED PACKAGE STRUCTURE AND MANUFACTURING METHOD, AND LED ARRAY MODULE - An LED package includes a substrate having an electrically conductive portion and an electrically non-conductive portion composed of an oxide of the conductive portion; an LED mounted on the conductive portion and electrically connected to the conductive portion; a first electrode disposed on the non-conductive portion and electrically connected to the LED by a wire; and a second electrode disposed on the substrate and electrically connected to the LED. | 01-06-2011 |
20110001693 | BACKLIGHT UNIT FOR LIQUID CRYSTAL DISPLAY DEVICE - There is provided a backlight unit for an LCD device. The backlight unit, disposed under a liquid crystal panel and emitting light to a liquid crystal panel, includes a lightguide plate, a light emitting diode (LED) array disposed at an edge of the lightguide plate and including a plurality of LED blocks each including at least one LED emitting white light, and a controller controlling a current signal applied to each of the plurality of LED blocks to regulate the luminance of each LED block. Accordingly, the backlight unit can be provided, which is capable of contributing to manufacturing thinner and larger products and realizing effective local dimming by using an LED disposed at an edge of the lightguide plate. | 01-06-2011 |
20100330717 | SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A high-efficiency semiconductor light emitting diode and a method for manufacturing the same are provided. The semiconductor LED has high internal quantum efficiency and can reduce the bad effect caused by the crystal defect. In the semiconductor light emitting diode, a conductive substrate has a three-dimensional top surface, and a light-emitting stack structure has a three-dimensional structure and includes an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, which are sequentially formed on the conductive substrate. A p-electrode is formed on the p-type nitride semiconductor layer, and an n-electrode is formed on a bottom surface of the conductive substrate. | 12-30-2010 |
20100289051 | CHIP COATED LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - A chip coated LED package and a manufacturing method thereof. The chip coated LED package includes a light emitting chip composed of a chip die-attached on a submount and a resin layer uniformly covering an outer surface of the chip die. The chip coated LED package also includes an electrode part electrically connected by metal wires with at least one bump ball exposed through an upper surface of the resin layer. The chip coated LED package further includes a package body having the electrode part and the light emitting chip mounted thereon. The invention improves light efficiency by preventing difference in color temperature according to irradiation angles, increases a yield, miniaturizes the package, and accommodates mass production. | 11-18-2010 |
20100178046 | CAMERA FLASH LENS AND PORTABLE DEVICE INCLUDING THE SAME - A camera flash lens for a plurality of light emitting diodes (LEDs) mounted on a board and serving as a light source of a camera flash, includes a plurality of annular lenses corresponding to the plurality of LEDs, respectively. The plurality of annular lenses each include an edge portion extending toward the board to reflect and collect light emitted from the edge of a corresponding LED of the plurality of LEDs, and a central portion having an inner surface with a Fresnel shape or a curved shape to collect light emitted from the top of the corresponding LED. | 07-15-2010 |
20100175620 | CHEMICAL VAPOR DEPOSITION APPARATUS - A chemical vapor deposition apparatus includes a substrate ceiling unit forming a reaction chamber to which a reaction gas is supplied to epitaxially grow a substrate, and an exhaust unit separated from the substrate ceiling unit and serving to discharge an exhaust gas after epitaxial growth reaction. The exhaust unit includes a particle formation part to which particles generated in the epitaxial growth of the substrate are attached. | 07-15-2010 |
20100155699 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes n-type and p-type nitride semiconductor layers, an active layer, the active layer having a lamination of quantum barrier layers and quantum well layers, a thermal stress control layer disposed between the n-type nitride semiconductor layer and the active layer, and formed of a material having a smaller thermal expansion coefficient than the n-type and p-type nitride semiconductor layers, and a lattice stress control layer disposed between the thermal stress control layer and the active layer, and including a first layer and a second layer. | 06-24-2010 |
20100148199 | Light emitting device with fine pattern - A semiconductor light emitting device includes a semiconductor light emitting structure including first and second conductivity type semiconductor layers, and an active layer disposed therebetween, first and second electrodes connected to the first and second conductivity type semiconductor layers, respectively, and a fine pattern for light extraction, formed on a light emitting surface from which light generated from the active layer is emitted. The fine pattern for light extraction is formed as a graded refractive index layer having a refractive index which decreases with vertical distance from the light emitting surface. | 06-17-2010 |