| SAMSUNG ELECTRO-MECHANICS., LTD. Patent applications |
| Patent application number | Title | Published |
|---|
| 20110233612 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - There is provided a semiconductor device having a High Electron Mobility Transistor (HEMT) structure allowing for enhanced performance and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer provided on the base substrate; a source electrode, a gate electrode and a drain electrode provided on the semiconductor layer to be spaced apart from one another; and an ohmic-contact layer partially provided at an interface between the drain electrode and the semiconductor layer. | 09-29-2011 |
| 20080278139 | SLEEP CURRENT ADJUSTING CIRCUIT OF SYSTEM ON CHIP - There is provided a sleep current adjusting circuit of a system on chip including: a regulator supplying a turn-on voltage and a normal current when a mode selection signal is a normal mode signal, and a turn-off voltage when the mode selection signal is a sleep mode signal; a switching device turned on by the turn-on voltage of the regulator to supply the normal current from the regulator to a main circuit part and a sleep operation circuit part, respectively, and turned off by the turn-off voltage of the regulator to block the normal current from being supplied to the main circuit part and supply the sleep current to the sleep operation circuit part; and a current limit device limiting an operating current flowing in response to the operating voltage and supplying the sleep current to the sleep operation circuit part. | 11-13-2008 |
