Ryukoku University Patent applications |
Patent application number | Title | Published |
20150075614 | METHOD FOR PRODUCING COMPOUND SEMICONDUCTOR THIN FILM AND SOLAR CELL INCLUDING COMPOUND SEMICONDUCTOR THIN FILM - A method includes the steps of performing a coating or printing of ink for producing a compound semiconductor thin film so as to form a compound semiconductor coating film, the ink including 50% by mass or more of amorphous compound nanoparticles, mechanically applying a pressure to the compound semiconductor coating film, and subjecting the compound semiconductor coating film to a heat-treatment to form a compound semiconductor thin film. | 03-19-2015 |
20150048281 | OXIDE FILM AND PROCESS FOR PRODUCING SAME - An oxide film according to this invention is a film of an oxide (possibly including inevitable impurities) containing silver (Ag) and nickel (Ni). This oxide film is an aggregate of microcrystals, an amorphous form including microcrystals, or an amorphous form and has p-type conductivity, which exhibits no clear diffraction peak with the XRD analysis, as seen in a chart in FIG. | 02-19-2015 |
20120301673 | OXIDE FILM, PROCESS FOR PRODUCING SAME, TARGET, AND PROCESS FOR PRODUCING SINTERED OXIDE - One oxide film of the present invention is a film of an oxide (which can contain incidental impurities) containing one transition element selected from the group consisting of niobium (Nb) and tantalum (Ta) and copper (Cu). The oxide film is an aggregate of microcrystals, an amorphous form including microcrystals or an amorphous form, which shows no clear diffraction peak in an XRD analysis and has p-type conductivity as shown in the chart of FIG. | 11-29-2012 |
20100327282 | SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS - A semiconductor device includes: a substrate; a p-type organic transistor including an organic semiconductor layer arranged on or above the substrate; and an n-type inorganic transistor including an inorganic semiconductor layer arranged on or above the organic transistor, wherein a channel region of the inorganic transistor overlaps a channel region of the organic transistor at least partially in a plan view. | 12-30-2010 |