| Rudolph Technologies, Inc. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120098563 | INSPECTION DEVICE WITH VERTICALLY MOVEABLE ASSEMBLY - The inspection of semiconductors or like substrates by the present mechanism minimizes deflection in the checkplate and probe card. An inspection device including a housing, a toggle assembly within the housing, an objective lens assembly attached within the toggle assembly including an objective coupled within an objective focus, wherein the objective focus is deflectable along an optics axis, and a cam assembly including a rotary cam and a window carrier, wherein the window carrier is moveable along the optics axis with rotation of the rotary cam, wherein the cam assembly is coupled to the toggle assembly with the objective and window are aligned along the optics axis. | 04-26-2012 |
| 20120087569 | AUTOMATED WAFER DEFECT INSPECTION SYSTEM AND A PROCESS OF PERFORMING SUCH INSPECTION - An automated defect inspection system has been invented and is used on patterned wafers, whole wafers, broken wafers, partial wafers, sawn wafers such as on film frames, JEDEC trays, Auer boats, die in gel or waffle packs, MCMs, etc., and is specifically intended and designed for second optical wafer inspection for such defects as metalization defects (such as scratches, voids, corrosion, and bridging), diffusion defects, passivation layer defects, scribing defects, glassivation defects, chips and cracks from sawing, solder bump defects, and bond pad area defects. | 04-12-2012 |
| 20120070065 | POLARIZATION IMAGING - Methods of monitoring critical dimensions in a semiconductor fabrication process include capturing at least one image of a first structure that has an effect on the polarization state of light reflected therefrom. For at least some of the first structure images, a value is calculated indicative of intensity of light reflected from the first structure. A critical dimension of the first structure is obtained and correlated with the calculated value. At least one image of a subsequent structure is captured. A determination is made, based at least in part on the calculated value, of a critical dimension of the subsequent structure. | 03-22-2012 |
| 20110268348 | FOCUSING METHOD AND APPARATUS - Methods and apparatus for placing wafers axially in an optical inspection system. A “best worst” focus method includes a series of through-focus images of a test wafer acquired using full field of view of the inspection optics. The value of the worst quality in each image is associated with the respective axial location, forming a locus of “worst” values as a function of axial location. The axial location is chosen which optimizes the locus, giving an axial location that provides the “best-worst” image quality. A “video focus” method includes a series of through-focus images generated using reduced field of view. A figure of merit is associated with each image, providing through-focus information. The “video focus” can be calibrated against the “best worst” focus. Further, a point sensor can be used to generate a single z-value for one (x,y) location that can be calibrated with “video focus”. | 11-03-2011 |
| 20110263049 | WAFER EDGE INSPECTION - Wafer edge inspection approaches are disclosed wherein an imaging device captures at least one image of an edge of a wafer. The at least one image can be analyzed in order to identify an edge bead removal line. An illumination system having a diffuser can further be used in capturing images. | 10-27-2011 |
| 20110141594 | REFLECTIVE OBJECTIVE - A reflective objective is disclosed, in which essentially all the optical power is in a single, off-axis, concave mirror, which is oriented generally perpendicular to the central axis of the objective. An incident beam is directed to and from the concave mirror by a pair of flat mirrors, so that a central on-axis ray in the incident beam is collinear with the corresponding thrice-reflected ray at the object. The object is one focal length away from the concave mirror. The aperture stop is also one focal length away from the concave mirror, leading to a condition of telecentricity at the object. Different focal lengths for the objectives are realized by using mirrors with different curvatures, located at different distances away from the central axis of the objective. The reflective objective can optionally be retrofitted into a turret typically used for microscope objectives, and can optionally have refractive elements, making the objective catadioptric. | 06-16-2011 |
| 20110089965 | PROBE CARD ANALYSIS SYSTEM AND METHOD - A system and method for evaluating wafer test probe cards under real-world wafer test cell condition integrates wafer test cell components into the probe card inspection and analysis process. Disclosed embodiments may utilize existing and/or modified wafer test cell components such as, a head plate, a test head, a signal delivery system, and a manipulator to emulate wafer test cell dynamics during the probe card inspection and analysis process. | 04-21-2011 |
| 20110085725 | WAFER EDGE INSPECTION AND METROLOGY - Some aspects of the present invention relate to a wafer inspection method. A plurality of images is acquired about an edge portion of a wafer. Each of the images comprises a pixel array having a first dimension and a second dimension. A composite image of compressed pixel arrays is generated by compressing each of the pixel arrays in the first dimension and concatenating the pixel arrays. The composite image is analyzed to identify a wafer feature, for example using a sinusoidal line fit. | 04-14-2011 |
| 20110054659 | WAFER FABRICATION MONITORING SYSTEMS AND METHODS, INCLUDING EDGE BEAD REMOVAL PROCESSING - Systems and method for monitoring semiconductor wafer fabrication processing, for example based upon EBR line inspection, including capturing at least one image of a wafer at an intermediate stage of fabrication. The captured image(s) are compressed to generate a composite representation of at least an edge zone of the wafer. An edge bead removal area is identified in the representation, and at least one feature attribute is extracted from the identified area. The extracted feature attribute is automatically assessed, and information relating to a status of the fabrication processing in generated based upon the assessment. For example, recommended modifications to the fabrication processing, either upstream or downstream of the current stage of fabrication (or both) can be generated and implemented. | 03-03-2011 |
| 20110037492 | WAFER PROBE TEST AND INSPECTION SYSTEM - An apparatus for electrically testing a semiconductor device is herein disclosed. The apparatus includes carriers for a semiconductor device and a probe card ( | 02-17-2011 |
| 20100321056 | SYSTEM AND METHOD OF MEASURING PROBE FLOAT - A system and method allow accurate calculation of probe float through optical free-hanging and electrical planarity measurement techniques. In accordance with an examplary embodiment, probe float may be determined by acquiring a free-hanging planarity measurement, obtaining a first electrical contact planarity measurement, and calculating probe float using results of the acquiring and the obtaining operations. | 12-23-2010 |
| 20100305897 | METHOD OF APPLYING THE ANALYSIS OF SCRUB MARK MORPHOLOGY AND LOCATION TO THE EVALUATION AND CORRECTION OF SEMICONDUCTOR TESTING, ANALYSIS, AND MANUFACTURE - By examining scrub mark properties (such as position and size) directly, the performance of a wafer probing process may be evaluated. Scrub mark images are captured, image data measured, and detailed information about the process is extracted through analysis. The information may then be used to troubleshoot, improve, and monitor the probing process. | 12-02-2010 |
| 20100277717 | METHOD AND SYSTEM FOR PROVIDING A HIGH DEFINITION TRIANGULATION SYSTEM - A triangulation system including a laser beam, optics focusing the laser beam on an object, a light detection unit detecting light reflected from the object due to impingement of the beam on the object, and an arrangement for determining, based on the detected light, object feature dimensions. The wavelength of the laser beam may be shorter than of infrared radiation, which allows for a reduced spot size without significant loss of depth of field. So as to reduce aberrations or a sensitivity to aberrations due to the shortened wavelength, the system may include (i) a polarization dependent coating matching the index of refraction of an element of the light detection unit to that of air for a range of angles, (ii) tilted projection optics, (iii) a prism wavefront corrector, and/or (iv) a positioning assembly, which provides for increased precision in positioning the laser diode with respect to a collimator lens. | 11-04-2010 |
| 20100239157 | AUTOMATED WAFER DEFECT INSPECTION SYSTEM AND A PROCESS OF PERFORMING SUCH INSPECTION - An automated defect inspection system has been invented and is used on patterned wafers, whole wafers, broken wafers, partial wafers, sawn wafers such as on film frames, JEDEC trays, Auer boats, die in gel or waffle packs, MCMs, etc., and is specifically intended and designed for second optical wafer inspection for such defects as metalization defects (such as scratches, voids, corrosion, and bridging), diffusion defects, passivation layer defects, scribing defects, glassivation defects, chips and cracks from sawing, solder bump defects, and bond pad area defects. | 09-23-2010 |
| 20100194406 | HIGH-SPEED CAPACITOR LEAKAGE MEASUREMENT SYSTEMS AND METHODS - Systems and methods according to aspects of the present invention are described. The systems and methods enable charging, soaking, and measuring of capacitors to be conducted quickly. Charging and soaking typically occurs in parallel and certain embodiments facilitate the measuring of capacitor leakage by sequentially disconnecting each capacitor and measuring the time for voltage on the capacitor to reach a predetermined threshold. Further, all capacitors can be disconnected from a charging source simultaneously and voltages can be measured for each capacitor simultaneously. Monitoring can be periodic in nature. Substantial time savings in the calculation device of leakage values and parameters can be attained. | 08-05-2010 |
| 20100086197 | WAFER EDGE INSPECTION AND METROLOGY - Some aspects of the present invention relate to a wafer inspection method. A plurality of images is acquired about an edge portion of a wafer. Each of the images comprises a pixel array having a first dimension and a second dimension. A composite image of compressed pixel arrays is generated by compressing each of the pixel arrays in the first dimension and concatenating the pixel arrays. The composite image is analyzed to identify a wafer feature, for example using a sinusoidal line fit. | 04-08-2010 |
| 20100073019 | APPARATUS FOR OBTAINING PLANARITY MEASUREMENTS WITH RESPECT TO A PROBE CARD ANALYSIS SYSTEM - A system and method of mitigating the effects of component deflections in a probe card analyzer system may implement three-dimensional comparative optical metrology techniques to model deflection characteristics. An exemplary system and method combine non-bussed electrical planarity measurements with fast optical planarity measurements to produce “effectively loaded” planarity measurements. | 03-25-2010 |
| 20100067779 | ALL SURFACE DATA FOR USE IN SUBSTRATE INSPECTION - A system for capturing, calibrating and concatenating all-surface inspection and metrology data is herein disclosed. Uses of such data are also disclosed. | 03-18-2010 |
| 20100061620 | PROBE MARK INSPECTION - Probe mark inspection involves a recipe based on unique image characteristics or combinations of unique image characteristics. Result images are correlated with a reference created to determine which image characteristic or combination of image characteristics provides an improved contrast. | 03-11-2010 |
| 20100012855 | Wafer Scanning - A semiconductor wafer measuring device including a wafer mover adapted to move a semiconductor wafer; a measurement head adapted to scan a surface of the semiconductor wafer as the semiconductor wafer is moved by the wafer mover; and a controller. The controller is adapted to control movement of the wafer mover to provide a first scanning segment of a first portion of the surface of the semiconductor wafer without rotating the semiconductor wafer during the first scanning segment, a second scanning segment of a second different portion of the surface of the semiconductor wafer without rotating the semiconductor wafer during the second scanning segment; and rotating the semiconductor wafer between the first and second scanning segments. | 01-21-2010 |
| 20090324056 | POLARIZATION IMAGING - A system and method for inspection a substrate for various defects is herein disclosed. Polarizing filters are used to improve the contrast of polarization dependent defects such as defocus and exposure defects, while retaining the same sensitivity to polarization independent defects, such as pits, voids, cracks, chips and particles. | 12-31-2009 |
| 20090073429 | ILLUMINATOR FOR DARKFIELD INSPECTION - Light from a single source is divided among several illumination arms, each of which directs light via a multimode fiber bundle from the source to the wafer location. The arms are arranged circumferentially around a common illumination region, so that the region is illuminated from several directions. For each arm, light exiting the fiber bundle enters a turning prism, reflects off the hypotenuse of the prism, and is diverged in one dimension by a negative cylindrical surface on the exiting face of the prism. The beam then reflects off an anamorphic mirror and propagates to the illumination region on the wafer. The beam has an asymmetric footprint, so that it illuminates a nearly circular region of the wafer when viewed at normal incidence. The fiber bundle is at the front focal plane in the meridional dimension. The illumination region is at the rear focal plane in both dimensions. | 03-19-2009 |
| 20080238464 | SYSTEM AND METHOD OF MITIGATING EFFECTS OF COMPONENT DEFLECTION IN A PROBE CARD ANALYZER - A system and method of mitigating the effects of component deflections in a probe card analyzer system may implement three-dimensional comparative optical metrology techniques to model deflection characteristics. An exemplary system and method combine non-bussed electrical planarity measurements with fast optical planarity measurements to produce “effectively loaded” planarity measurements. | 10-02-2008 |
| 20080204756 | EDGE NORMAL PROCESS - An edge inspection method for detecting defects on a wafer edge normal surface includes acquiring a set of digital images which captures a circumference of the wafer. An edge of the wafer about the circumference is determined. Each digital image is segmented into a plurality of horizontal bands. Adjacent edge clusters about the circumference of the wafer are combined into edge pixel bins. The edge pixel bins are analyzed via edge clusters analysis to identify defects. The edge pixel bins are also analyzed via blob analysis to determine defects. | 08-28-2008 |
| 20080197865 | PROBE CARD ANALYSIS SYSTEM AND METHOD - A system and method for evaluating wafer test probe cards under real-world wafer test cell condition integrates wafer test cell components into the probe card inspection and analysis process. Disclosed embodiments may utilize existing and/or modified wafer test cell components such as, a head plate, a test head, a signal delivery system, and a manipulator to emulate wafer test cell dynamics during the probe card inspection and analysis process. | 08-21-2008 |
