RUBICON TECHNOLOGY, INC.
|RUBICON TECHNOLOGY, INC. Patent applications|
|Patent application number||Title||Published|
|20150023866||METHOD AND SYSTEM OF PRODUCING LARGE OXIDE CRYSTALS FROM A MELT - A process and system may be employed to produce large, defect-free oxide crystals with high melting points which may utilize a water-cooled horizontal furnace with a hot zone design comprising multiple independently controllable heaters surrounded by a vapor shield and various layers of thermal insulation of varying thickness and composition. Raw materials such as sapphire crystals or alumina powder may be placed in a crucible or boat that may be positioned to ride on rollers. The crucible may be pulled (or pushed) through a furnace environment surrounded by a vapor shield and insulation at a controlled rate to melt and then crystallize the raw material into a sapphire crystal. The vacuum level may be controlled by a vacuum system attached to the furnace. Process parameters such as power, temperature, pulling speed (i.e., movement speed), heating rates, cooling rates, and chamber pressure may be controlled by a control system which may be configured to take an input from each component of the system and sends the necessary control outputs.||01-22-2015|
|20140272346||METHOD OF GROWING ALUMINUM OXIDE ONTO SUBSTRATES BY USE OF AN ALUMINUM SOURCE IN AN OXYGEN ENVIRONMENT TO CREATE TRANSPARENT, SCRATCH RESISTANT WINDOWS - A system and process for inter alia coating a substrate such as glass with a layer of aluminum oxide to create a scratch-resistant and shatter-resistant matrix comprised of a thin scratch-resistant aluminum oxide film deposited on one or more sides of a transparent and shatter-resistant substrate for use in consumer and mobile devices such as watch crystals, cell phones, tablet computers, personal computers and the like. The system and process may include a reactive thermal evaporation technique. An advantage of the reactive thermal evaporation technique includes using arbitrarily high oxygen pressures, allowing for higher growth rates of aluminum oxide at the surface of the substrate and, ultimately, a less expensive process. Another advantage of this reactive thermal evaporation process is that it does not utilize electrical fields typically found in traditional reactive sputtering techniques.||09-18-2014|
|20140272345||METHOD OF GROWING ALUMINUM OXIDE ONTO SUBSTRATES BY USE OF AN ALUMINUM SOURCE IN AN ENVIRONMENT CONTAINING PARTIAL PRESSURE OF OXYGEN TO CREATE TRANSPARENT, SCRATCH-RESISTANT WINDOWS - A system and process for inter alia coating a substrate such as glass substrate with a layer of aluminum oxide to create a scratch-resistant and shatter-resistant matrix comprised of a thin scratch-resistant aluminum oxide film deposited on one or more sides of a transparent and shatter-resistant substrate for use in consumer and mobile devices such as watch crystals, cell phones, tablet computers, personal computers and the like. The system and process may include a sputtering technique. The system and process may produce a thin window that has a thickness of about 2 mm or less, and the matrix (i.e., the combination of the aluminum oxide film and transparent substrate) may have a shatter resistance with a Young's Modulus value that is less than that of sapphire, i.e., less than about 350 gigapascals (GPa). The thin window has superior shatter-resistant characteristics.||09-18-2014|
|20140082947||METHOD FOR CREATING ATOMICALLY SHARP EDGES ON OBJECTS MADE OF CRYSTAL MATERIAL - A process to make atomically sharp cutting devices is described. The process may provide for a cost effective and efficient technique of producing the atomically sharp cutting devices made from single crystal material such as, for example, sapphire, silicon carbide, silicon, and the like. The process may include identifying and choosing a preferred geometric orientation of the crystal material where cleavage can be promoted along a preferred natural plane of the single crystal material, thus ultimately producing an atomically sharp edge. The single crystal material may be covered at select surface locations by a photo-resist material arranged in a predetermined alignment with reference to the preferred plane to prevent etching at unexposed surface portions while permitting etching at exposed surface portions of the single crystal material. An atomic edge may be created by physical cleaving once the etching has reached a predetermined end-point.||03-27-2014|
|20130028385||Intelligent Machines and Process for Production of Monocrystalline Products with Goniometer Continual Feedback - The invention includes an x-ray goniometer positionable directly adjacent to processing machines used in the cutting, milling, drilling and shaping of crystal boules and crystal ingots, used in conjunction with an adjustable tilt platform capable of pitch, yaw and roll movement, allowing in-situ measurement and automatic adjustment of crystal orientation with respect to the processing machine. The goniometer may be secured to the tool or a portion of the machine which is adjacent the piece to be worked. Various embodiments include an x-ray goniometer and adjustable tilt platform incorporated into a core drilling machine, saw, surface grinder, polishing apparatus, or orientation flat or notch grinder. Incorporating an x-ray goniometer and adjustable tilt platform directly into a crystal processing machine results in a decrease in overall processing time and labor, and a significant increase in precision when processing crystal ingots into a final product, such as a notched wafer.||01-31-2013|
Patent applications by RUBICON TECHNOLOGY, INC.