RoseStreet Labs Energy, Inc.
|RoseStreet Labs Energy, Inc. Patent applications|
|Patent application number||Title||Published|
|20150162469||DILUTE GROUP III-V NITRIDE INTERMEDIATE BAND SOLAR CELLS WITH CONTACT BLOCKING LAYERS - An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V||06-11-2015|
|20130074901||COMPOSITIONALLY GRADED DILUTE GROUP III-V NITRIDE CELL WITH BLOCKING LAYERS FOR MULTIJUNCTION SOLAR CELL - A dilute Group III-V nitride solar cell is provided for use in a multijunction solar cell having a p-n junction formed by p-type and n-type layers of dilute Group III-V nitride material, such as GaNAs. Blocking layers of a group III-V ternary alloy are formed on opposing surfaces of the p-n junction to improve the electron and hole collection efficiency of the p-n junction by preventing the flow of electrons and holes, respectively, into the adjacent layers of the multijunction solar cell in certain directions. The III-V nitride solar cell is current matched to other solar cells of the multijunction solar cell. The III-V nitride solar cell may possess a bandgap of approximately 1.0 eV to serve as one junction of the multijunction solar cell. The p-type and n-type layers may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.||03-28-2013|
|20130026484||Multi-Color Light Emitting Devices with Compositionally Graded Cladding Group III-Nitride Layers Grown on Substrates - A light emitting device includes a substrate, multiple n-type layers, and multiple p-type layers. The n-type layers and the p-type layers each include a group III nitride alloy. At least one of the n-type layers is a compositionally graded n-type group III nitride, and at least one of the p-type layers is a compositionally graded p-type group III nitride. A first ohmic contact for injecting current is formed on the substrate, and a second ohmic contact is formed on a surface of at least one of the p-type layers. Utilizing the disclosed structure and methods, a device capable of emitting light over a wide spectrum may be made without the use of phosphor materials.||01-31-2013|
|20110005590||Tandem Photoelectrochemical Cell for Water Dissociation - A tandem photoelectrochemical (PEC) cell including a nitride PEC semiconductor connected in series with a current matched photovoltaic (PV) Si solar cell that provides an internal biasing voltage. A low resistance tunnel junction is formed between the PEC semiconductor and PV cell. The tandem PEC cell is placed together with a counter electrode in contact with an aqueous solution, such that, when exposed to solar radiation, the PEC semiconductor utilizes high energy photons to split water while the PV cell utilizes low energy photons to bias the tandem PEC cell to eliminate the barrier between Fermi energy and redox potentials, thereby initiating the spontaneous dissociation of water in the aqueous solution into hydrogen and oxygen. The conduction band edge (CBE) for n-type PEC semiconductor is located in the vicinity of the Fermi stabilization energy to reduce the barriers for the charge transfer between the PEC semiconductor and the aqueous solution.||01-13-2011|
Patent applications by RoseStreet Labs Energy, Inc.