Rohn Co., Ltd.
|Rohn Co., Ltd. Patent applications|
|Patent application number||Title||Published|
|20120261676||SiC FIELD EFFECT TRANSISTOR - A SiC field effect transistor includes: a SiC semiconductor layer; and a MIS transistor structure including a first conductivity type source region in the semiconductor layer, a second conductivity type body region in the semiconductor layer in contact with the source region, a first conductivity type drift region in the semiconductor layer in contact with the body region, a gate electrode opposed to the body region with a gate insulation film interposed between the electrode and the body region for forming a channel in the body region to cause electric current to flow between the drift region and the source region, and a barrier forming layer in contact with the drift region to form a junction barrier by the contact with the drift region, the junction barrier being lower than a diffusion potential of a body diode defined by a junction between the body region and the drift region.||10-18-2012|
|20100085675||ELECTRONIC CIRCUIT - Provided is an electronic circuit including an upper control unit and a lower control unit. The upper control unit performs a logic transition of a gate signal so as to off-latch an upper switch by using the fall edge of a drive signal as a trigger and release the off-latch of the upper switch by using the rise edge of a monitor signal as a trigger. The lower control unit performs a logic transition of the gate signal so as to off-latch a lower switch by using the rise edge of the drive signal as a trigger and release the off-latch of the lower switch by using the rise edge of a monitor signal as a trigger.||04-08-2010|
|20090272992||Semiconductor Light-Emitting Device and Process for Producing the Same - A semiconductor light emitting device of the present invention includes a substrate (||11-05-2009|
Patent applications by Rohn Co., Ltd.