| Rohm Co., Ltd. Patent applications |
| Patent application number | Title | Published |
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| 20120127254 | THERMAL PRINT HEAD AND METHOD OF MANUFACTURING THE SAME - A thermal print head includes a substrate, a glaze layer formed on the substrate and provided with a heating resistor support portion extending in a primary scanning direction and having an arc-like cross-sectional shape when seen in a direction perpendicular to the primary scanning direction, an electrode layer including a plurality of individual electrodes, each provided with a first strip-shaped portion arranged along the primary scanning direction, each of the first strip-shaped portions formed on the heating resistor support portion, and a common electrode provided with a plurality of second strip-shaped portions arranged along the primary scanning direction, each of the second strip-shaped portions formed on the heating resistor support portion; and a resistor layer including heating portions heated by applying an electric current from the electrode layer and electrode covering portions each configured to cover a gap between the first and second strip-shaped portions. | 05-24-2012 |
| 20120127151 | POWER SUPPLY DEVICE, LIQUID CRYSTAL DRIVE DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE - The power supply device according to the present invention comprises a first power supply circuit arranged to generate a first output voltage from an input voltage; and a second power supply circuit arranged to generate from the input voltage a second output voltage that is less than the first output voltage, wherein the first power supply circuit performs feedback control of the first output voltage so as to cause a first feedback voltage that corresponds to the first output voltage to match a predetermined reference voltage; and the second power supply circuit performs feedback control of the second output voltage so as to cause a second feedback voltage that corresponds to the second output voltage to match the first feedback voltage. | 05-24-2012 |
| 20120126768 | CONTROL CIRCUIT FOR SWITCHING POWER SUPPLY - An error amplifier generates an error signal V | 05-24-2012 |
| 20120126732 | MOTOR DRIVER AND VEHICLE USING THE SAME - A motor driver includes a control portion, for performing variable control on a torque or rotation speed of a motor through a control signal; and an output mode selection circuit, for sending an indication to the control portion when the control signal is abnormal, so that the motor enters an action status corresponding to a selection signal. | 05-24-2012 |
| 20120126269 | LIGHT EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND OPTICAL DEVICE - The present invention provides a light emitting device which is capable of enhancing the radiant intensity on a single direction. The light emitting device comprises a substrate, a lens bonded to the substrate, and an LED chip bonded to the substrate and exposed in a gap clipped between the substrate and the lens, wherein the lens has a light output surface which bulges in a direction that is defined from the substrate toward the LED chip and is contained in a thickness direction of the substrate to transmit the light emitted from the LED chip. | 05-24-2012 |
| 20120126249 | SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes: a semiconductor layer made of SiC; an impurity region formed by doping the semiconductor layer with an impurity; and a contact wire formed on the semiconductor layer in contact with the impurity region, while the contact wire has a polysilicon layer in the portion in contact with the impurity region, and has a metal layer on the polysilicon layer. | 05-24-2012 |
| 20120120342 | CONTROL CIRCUIT FOR SWITCHING POWER SUPPLY - A control IC controls a switching power supply configured to supply a driving voltage Vout to one terminal of an LED string to be intermittently driven. In the on period of the LED string, a pulse modulator generates a pulse signal having a duty ratio adjusted such that a detection voltage V | 05-17-2012 |
| 20120119724 | CURRENT GENERATING CIRCUIT - A first current source generates a first current having positive temperature characteristics. A second current source generates a second current. A first current mirror circuit generates a third current by multiplying, by a first coefficient, the base current of a compensation transistor configured as an NPN bipolar transistor arranged on a path of the second current. A second current mirror circuit generates a fourth current that is proportional to the difference between the first current and the third current. A current generating circuit outputs the sum total of the fourth current and a fifth current that is proportional to the base current. | 05-17-2012 |
| 20120119219 | NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE - A nitride semiconductor element capable of accommodating GaN electron transfer layers of a wide range of thickness, so as to allow greater freedom of device design, and a nitride semiconductor element package with excellent voltage tolerance performance and reliability are provided. On a substrate ( | 05-17-2012 |
| 20120118350 | ORGANIC DEVICES, ORGANIC ELECTROLUMINESCENT DEVICES AND ORGANIC SOLAR CELLS - An organic device, including an organic compound having charge-transporting ability (i.e., transporting holes and/or electrons) and/or including organic light emissive molecules capable of emitting at least one of fluorescent light or phosphorescent light, has a charge transfer complex-contained layer including a charge transfer complex formed upon contact of an organic hole-transporting compound and molybdenum trioxide via a manner of lamination or mixing thereof, so that the organic hole-transporting compound is in a state of radical cation (i.e., positively charged species) in the charge transfer complex-contained layer. | 05-17-2012 |
| 20120118068 | Semiconductor Pressure Sensor, Pressure Sensor Apparatus, Electronic Equipment, and Method of Manufacturing Semiconductor Pressure Sensor - A semiconductor pressure sensor ( | 05-17-2012 |
| 20120114322 | LENS CONTROLLING DEVICE AND IMAGING APPARATUS USING THE SAME - A lens controlling device disclosed herein includes: a servo calculation section which calculates a motor current setting value such that a lens position detection signal which is inputted from a photo reflector agrees with a predetermined target lens position setting signal; a motor driver which generates a motor current in accordance with the motor current setting value, and supplies the motor current to a lens drive motor; and a temperature correction calculation section which monitors the motor current setting value to generate the temperature correction signal, and corrects either one of the target lens position setting signal and the lens position detection signal. | 05-10-2012 |
| 20120113340 | LIQUID CRYSTAL DISPLAY PANEL, LIQUID CRYSTAL DRIVE DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE - The liquid crystal display panel according to the present invention comprises a plurality of gate lines, a plurality of source lines, and a plurality of liquid crystal pixels, wherein the plurality of source lines and the plurality of liquid crystal pixels are laid out so that the polarity of voltage to be applied to the plurality of liquid crystal pixels is inverted for individual dots for the liquid crystal display panel overall, and so that the polarity of voltage to be applied to the plurality of source lines is not inverted for at least an entire row scan interval. | 05-10-2012 |
| 20120112808 | PHASE-LOCKED LOOP CIRCUIT - A gm-C VCO oscillates at a frequency that corresponds to an input control voltage. A divider divides the frequency of an oscillation signal output from the gm-C VCO. A phase comparison signal generating unit generates a phase difference signal that corresponds to the phase difference between the oscillation signal thus frequency-divided by the divider and a reference clock signal. A loop filter performs filtering of the phase difference signal so as to generate the control voltage. A startup circuit injects a seed pulse into the gm-C VCO at a timing determined based upon the level of a detection signal that corresponds to the control voltage. | 05-10-2012 |
| 20120112227 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes an LED chip, which includes an n-type semiconductor layer, active layer, and p-type semiconductor layer stacked on a substrate. The LED chip further includes an anode electrode connected to the p-type semiconductor, and a cathode connected to the n-type semiconductor. The anode and cathode electrodes face a case with the LED chip mounted thereon. The case includes a base member including front and rear surfaces, and wirings including a front surface layer having anode and cathode pads formed at the front surface, a rear surface layer having anode and cathode mounting electrodes formed at the rear surface, an anode through wiring connecting the anode pad and the anode mounting electrode and passing through a portion of the base member, and a cathode through wirings connecting the cathode pad and the cathode mounting electrode and passing through a portion of the base member. | 05-10-2012 |
| 20120112201 | HIGH MELTING POINT SOLDERING LAYER AND FABRICATION METHOD FOR THE SAME, AND SEMICONDUCTOR DEVICE - A high melting point soldering layer includes a low melting point metal layer, a first high melting point metal layer disposed on a surface of the low melting point metal layer, and a second high melting point metal layer disposed at a back side of the low melting point metal layer. The low melting point metal layer, the first high melting point metal layer, and the second high melting point metal layer are mutually alloyed by transient liquid phase bonding, by annealing not less than a melting temperature of the low melting point metal layer, diffusing the metal of the low melting point metal layer into an alloy of the first high melting point metal layer and the second high melting point metal layer. The high melting point soldering layer has a higher melting point temperature than that of the low melting point metal layer. It is provided a binary based high melting point soldering layer having TLP bonding of a high melting point according to a low temperature processing, a fabrication method for the high melting point soldering layer and a semiconductor device to which the high melting point soldering layer is applied. | 05-10-2012 |
| 20120108059 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The method of manufacturing a semiconductor device according to the present invention includes: an insulating layer forming step of forming an insulating layer made of an insulating material containing Si and O; a groove forming step of forming a groove in the insulating layer; a metal film applying step of covering the inner surface of the groove with a metal film made of MnO | 05-03-2012 |
| 20120106072 | DRIVING APPARATUS FOR SENSORLESS FAN MOTOR - A BEMF detection circuit generates a rotation detection signal indicating a comparison result between electromotive force voltages V | 05-03-2012 |
| 20120098517 | High Side Switch Circuit, Interface Circuit and Electronic Device - A high side switch circuit includes a switch electrically connected between input and output terminals, a gate control unit, and an over-current sensor unit. The over-current sensor unit includes a resistive element and a comparator. The comparator senses an over-current if a voltage of the resistive element exceeds a threshold voltage. The comparator is adjusted in advance such that the detected voltage at the time of over-current exceeds the threshold voltage. Even if accuracy of resistance value of the resistive element is not high, accuracy of detecting over-current can be improved by adjusting the comparator. | 04-26-2012 |
| 20120097229 | ORGANIC THIN FILM PHOTOVOLTAIC DEVICE AND FABRICATION METHOD FOR THE SAME - An organic thin film photovoltaic device includes an optically transmissive electrode layer on a substrate. A hole transport layer is formed on the electrode layer. First, second and third p type organic layers are disposed one after another on the hole transport layer. An n-type organic layer is disposed on a concave region and a convex region of a trench region that is configured to pass through the first and second p-type organic layers and be bounded by the third p-type organic layer. An electron transport layer is formed on the n-type organic layer, and a metallic nanoparticle layer is formed on a surface of a concave region and a convex region of the electron transport layer. A cathode electrode layer fills the trench region and covers the metallic nanoparticle layer. | 04-26-2012 |
| 20120096942 | ANGULAR VELOCITY SENSOR AND SYNCHRONOUS DETECTION CIRCUIT USED THEREIN - In an angular velocity sensor, an upper electrode of a first piezoelectric element and a lower electrode of a second piezoelectric element are connected to an input terminal of a first Q/V conversion circuit, and a lower electrode of the first piezoelectric element and an upper electrode of the second piezoelectric element are connected to an input terminal of a second Q/V conversion circuit. Thus, vibration noise components of the quantities of charge generated at the first and second piezoelectric elements are cancelled out, and Coriolis components of the quantities of charge generated at the first and second piezoelectric elements are added, whereby only the Coriolis components are extracted. | 04-26-2012 |
| 20120092897 | POWER SUPPLY CONTROL DEVICE, POWER SUPPLY SYSTEM AND ELETRONIC DEVICE - An electronic device ( | 04-19-2012 |
| 20120091983 | STEP-DOWN SWITCHING REGULATOR - An output monitoring comparator outputs an ON signal when an output voltage becomes lower than a reference voltage. A pulse modulator generates a pulse signal at a predetermined level, an ON time-period from when the ON signal is outputted. A driver circuit alternately turns ON, after a dead time, a switching transistor and a synchronous rectification transistor, based on the pulse signal. A light load mode detector compares a switching voltage at a connection point of the switching transistor and the synchronous rectification transistor, and ground potential, and at timing at which the ON signal is outputted from the output monitoring comparator, when the switching voltage is higher than the ground potential, nullifies the ON signal. | 04-19-2012 |
| 20120091555 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a first semiconductor chip including a first surface, a second surface and a first terminal arranged on the first surface, a second semiconductor chip including a first surface, a second surface and a second terminal arranged on the first surface of the second semiconductor chip, a support substrate including a first surface bonded to the second surfaces of the first semiconductor chip and the second semiconductor chip, and an isolation groove formed on the first surface of the support substrate. The isolation includes a pair of side surfaces continuously extending from opposing side surfaces of the first semiconductor chip and the second semiconductor chip, respectively, and the isolation groove is formed into the support substrate to extend from the first surface of the support substrate. The isolation groove has a depth less than a thickness of the support substrate. | 04-19-2012 |
| 20120086095 | Photoelectric Conversion Device and Image Pick-Up Device - A photoelectric conversion device includes a semiconductor substrate, an insulating layer provided on the semiconductor substrate, an electrode provided on the insulating layer, a photoelectric conversion film provided on the electrode for converting received light to charges, a line connected between the electrode and the semiconductor substrate, a first planar electrode provided in the insulating layer and connected to the electrode, and a second planar electrode provided in the insulating layer between the first planar electrode and the semiconductor substrate. | 04-12-2012 |
| 20120081096 | POWER SUPPLY UNIT - A power supply unit, which is mounted in a host device for supplying power to a client device through a cable interposed therebetween, includes an output unit configured to generate a first output voltage from an input voltage. A controller is provided in the power supply to perform voltage feedback control on the output unit such that the first output voltage is maintained at a predetermined target value. Also, the power supply unit includes a first correction unit configured to correct the voltage feedback control at the controller such that the first output voltage is increased as a second output voltage finally supplied to the client device becomes lower, and a second correction unit configured to correct the voltage feedback control at the controller such that the first output voltage is increased as an output current supplied from the host device to the client device becomes larger. | 04-05-2012 |
| 20120075544 | DRIVING CIRCUIT FOR LIGHT EMITTING DEVICE - A driving circuit is provided, which is configured to supply a driving voltage and a driving current to an LED string. A first detection resistor is arranged on a path of the LED string. A voltage source outputs a control voltage having a level that corresponds to the target luminance level of the LED string, and a first threshold voltage that is proportional to the control voltage. A controller generates a gate pulse signal having a duty ratio that is adjusted such that the voltage drop across the first detection resistor matches the control voltage. A first driver drives a switching transistor of a DC/DC converter according to the gate pulse signal. When the voltage drop across the first detection resistor exceeds the first threshold voltage, a first comparator stops the switching operation of the switching transistor. | 03-29-2012 |
| 20120075001 | LEVEL SHIFT CIRCUIT AND SWITCHING REGULATOR USING THE SAME - A level shift circuit includes an input port to which an input signal is input, a first signal amplifying unit configured to amplify the input signal input to the input port, a node at the first signal amplifying unit to output the amplified signal, a level shift input port to which a level shift voltage for controlling a DC level of the node is input, a first supply voltage configured to drive the first signal amplifying unit, and a level shift voltage generation circuit configured to generate the first supply voltage and the level shift voltage. | 03-29-2012 |
| 20120074850 | ILLUMINATING DEVICE - Disclosed is an illuminating device which has: a first illuminating lamp which is disposed at a first predetermined position and is identifiable; a second illuminating lamp which is disposed at a second predetermined position having a predetermined relationship with the first predetermined position and is identifiable; a determining means which determines the mutual relationship between the first illuminating lamp and the second illuminating lamp; and a transmitting means which transmits identifiable control signals to the first illuminating lamp and the second illuminating lamp, respectively, so as to achieve the determination made by the determining means. | 03-29-2012 |
| 20120074845 | AUTOMOBILE LED DRIVING DEVICE - An automobile LED driving device includes a current setting portion to set multiple reference currents independently from one another for multiple respective current setting resistors connected externally, a current controller to select one of the multiple reference currents based on a control signal provided from outside, and an output transistor to control an output current to an automobile LED connected externally based on the reference current selected by the current controller. | 03-29-2012 |
| 20120074556 | SEMICONDUCTOR POWER MODULE AND METHOD OF MANUFACTURING THE SAME - A semiconductor power module according to the present invention includes a base member, a semiconductor power device having a surface and a rear surface with the rear surface bonded to the base member, a metal block, having a surface and a rear surface with the rear surface bonded to the surface of the semiconductor power device, uprighted from the surface of the semiconductor power device in a direction separating from the base member and employed as a wiring member for the semiconductor power device, and an external terminal bonded to the surface of the metal block for supplying power to the semiconductor power device through the metal block. | 03-29-2012 |
| 20120069039 | TIMING CONTROLLER - A transmission method is provided for transmitting image data having pixels each comprising multiple sub-pixels provided for respective colors. The luminance of each sub-pixel provided for the corresponding color is represented by m-bit (m is an integer of 2 or more) luminance data R[m−1:0], G[m−1:0], and B[m−1:0]. Mapping is performed such that the bits provided for the same color at the same bit positions selected from the adjacent n (n represents an integer of 2 or more) pixels are sequentially arranged in the time direction so as to form a data unit. Data transmission is performed in units of data units (bit sets) thus mapped. | 03-22-2012 |
| 20120067405 | Titania Crystal, Process for Producing the Same, Layered Titania Substrate, and Dye-sensitized Solar Cell - An anatase-type titania crystal having a one-dimensional structure; a process for producing the crystal; and a dye-sensitized solar cell employing the titania crystal. The titania crystal is excellent in photocatalytic characteristics and photoelectric conversion characteristics. The process for titania crystal production is characterized by comprising: a mixing step in which an aqueous solution containing a block copolymer (A) having a hydrophobic block and a hydrophilic block is mixed with an organic solvent (C) containing a titanium alkoxide (B) dissolved therein to thereby give a liquid mixture; a reaction step in which the temperature of the liquid mixture is set at a value in the range of from 120° C. to 180° C. and the pressure of the atmosphere is set so as to result in the saturated vapor pressure at that set temperature to thereby react the liquid mixture and form a titania sol; and a baking step in which the titania sol is heated to produce baked titania particles having a wire shape. | 03-22-2012 |
| 20120064731 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A silicon carbide semiconductor device ( | 03-15-2012 |
| 20120064653 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL LAYER - A method for manufacturing a nitride semiconductor device such as a nitride semiconductor light emitting device, a transistor device or the like. The method includes the steps of forming a buffer crystalline layer of the nitride semiconductor made of Al | 03-15-2012 |
| 20120062291 | CLOCK DATA RECOVERY CIRCUIT - Multiple flip-flops each latch input data at a time point of the corresponding clock signal. The i-th (i represents an integer) first logical gate generates an internal up signal which is asserted when the output of the (2×i−1)-th flip-flop does not match the output of the (2×i)-th flip-flop. The j-th (j represents an integer) second logical gate generates an internal down signal which is asserted when the output of the (2×j)-th flip-flop does not match the output of the (2×j+1)-th flip-flop. A third logical gate generates an up signal based upon the multiple internal up signals. A fourth logical gate generates a down signal based upon the multiple internal down signals. | 03-15-2012 |
| 20120057099 | LED LIGHT SOURCE UNIT FOR BACKLIGHT OF LIQUID CRYSTAL DISPLAY, AND LIQUID CRYSTAL DISPLAY - An LED light source unit for a backlight of a liquid crystal display is provided. The light source unit includes a plurality of LED chips, an insulating substrate, and a metal film covering a principal surface of the substrate. The LED chips are mounted on the metal film. With this arrangement, brightness of the light source unit is enhanced. | 03-08-2012 |
| 20120043910 | LIGHTING APPARATUS - Of the various technological features disclosed in the present specification, a structure according to the one technological feature is as follows. A lighting apparatus changeable between an illuminating state and a non-illuminating state comprising: a non-contact motion sensor arranged to sense a movement of a hand near the lighting apparatus; and a controller arranged to control the lighting apparatus in the non-illuminating state to change from the non-illuminating state to the illuminating state in response to the movement of hand sensed by the non-contact motion sensor, and to control the lighting apparatus in the illuminating state to cause a change in illumination with the illuminating state kept in response to the same movement of hand sensed by the non-contact motion sensor. | 02-23-2012 |
| 20120039487 | FIRST STAGE AMPLIFIER CIRCUIT - An external audio signal is input to an input terminal which is connected to the first terminal of a first resistor. The first terminal of a second resistor is connected to the second terminal of the first resistor. An operational amplifier is arranged such that its inverting input terminal is connected to the second terminal of the second resistor, and a reference voltage is applied to its non-inverting input terminal. A third resistor is arranged between the output terminal and the inverting input terminal of the operational amplifier. A first diode is arranged between the second terminal of the first resistor and a power supply terminal such that its cathode is on the power supply terminal side. Furthermore, a second diode is arranged between the second terminal of the first resistor and the ground such that its cathode is on the second terminal side of the first resistor. | 02-16-2012 |
| 20120032713 | Semiconductor Device and Power Supply Unit Utilizing the Same - A semiconductor device has pluralities of grid array terminals forming a grid array structure, e.g. a BGA structure, in which the output end of a built-in switch circuit is connected to multiple terminals of the grid array structure, thereby reducing the current that flows through each of the multiple terminals below a permissible level and minimizing the heat due to contact resistances of the multiple terminals in contact with the IC socket of the semiconductor device. Each pair of nearest neighbors of the multiple terminals is interposed by at least one further array terminal. The multiple terminals are all located at the outermost peripheral terminal positions of the grid array structure. Thus, the heat generated in the respective multiple terminals connected to the switch circuit is reduced, thereby minimizing the possibility of hazardous melting of the terminals. | 02-09-2012 |
| 20120032325 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device with which stress can be prevented from locally concentrating on an external connecting terminal on a post and thus damages of the external connecting terminal can be prevented. The semiconductor device includes a semiconductor chip, a sealing resin layer stacked on a surface of the semiconductor chip, and the post which penetrates the sealing resin layer in a stacking direction of the semiconductor chip and the sealing resin layer, protrudes from the sealing resin layer, and has a periphery of the protruding portion opposedly in contact with a surface of the sealing resin layer in the stacking direction. | 02-09-2012 |
| 20120027203 | INTERFACE CIRCUIT - A decoder extracts a synchronization signal from a data stream received via an active port. Synchronization signal generators are arranged for respective ports, and each is configured such that, when it receives a synchronization signal for the corresponding port from the decoder, it cyclically generates a replica of the synchronization signal for the port. When the synchronization signal received from the decoder or the synchronization signal generator is asserted, a first calculation module calculates authentication data. When the synchronization signal for the active port is asserted, a second calculation module generates a decipher code used to decipher the data stream input to the active port, using data obtained by the calculation processing of the first calculation module. | 02-02-2012 |
| 20120027038 | TWO-DIMENSIONAL PHOTONIC CRYSTAL LASER - A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer | 02-02-2012 |
| 20120025737 | CURRENT MIRROR CIRCUIT - A current mirror circuit duplicates an input current that flows through an input terminal, and outputs an output current via an output terminal. A first transistor, a second transistor, and a diode are sequentially arranged in series between a power supply terminal to which a fixed voltage is applied and an input terminal. A third transistor and a fourth transistor are sequentially arranged in series between the power supply terminal and the output terminal. The gate of the first transistor and the gate of the third transistor are connected to the drain of the second transistor. The gate of the second transistor and the gate of the fourth transistor are connected to the input terminal. | 02-02-2012 |
| 20120025302 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device according to the present invention includes: a semiconductor layer made of silicon; a trench formed by digging in from a top surface of the semiconductor layer; a gate insulating film formed on an inner wall surface of the trench and made of silicon oxide; a gate electrode embedded in the trench via the gate insulating film and made of a polysilicon doped with an impurity; and an oxidation-resistant metal film disposed on a top surface of the gate electrode and covering the top surface. | 02-02-2012 |
| 20120023344 | SEMICONDUCTOR APPARATUS - A first switch is arranged between a judgment unit and a signal line. The first switch is turned on during a period in which the judgment unit judges a device, after which the first switch is turned off. A second switch is turned off during a period in which the judgment unit judges the device, after which the second switch is turned on. The signal line connects a communication interface port, which allows various different kinds of devices to be connected, and a communication terminal of a processor configured to perform data communication with the device. The judgment unit monitors the electrical state of the signal line, and judges the device connected to the port. | 01-26-2012 |
| 20120022382 | WIRELESS PLETHYSMOGRAM SENSOR UNIT, A PROCESSING UNIT FOR PLETHYSMOGRAM AND A PLETHYSMOGRAM SYSTEM - A wireless plethysmogram sensor unit is capable of obtaining a plethysmogram from a living tissue of a measuring object and of transmitting the plethysmogram to a processing unit outside the wireless plethysmogram sensor unit. The sensor unit includes a light source to emit measuring light into the living tissue and a light receiving element to receive light emerging from the tissue, which is accompanied by pulsation caused by absorption by arteries in the tissue. A memory stores a plethysmogram obtained in accordance with the light received by the light receiving element. A short range wireless communicator transmits the plethysmogram to the processing unit. A power source provides power to other elements in the sensor unit, and a controller controls the elements of the sensor unit. | 01-26-2012 |
| 20120020087 | LIGHT EMITTING DIODE LAMP AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode (LED) lamp includes a plurality of LED chips and a heat dissipation member configured to dissipate heat generated from the LED chips. The heat dissipation member includes a tubular unit having a constant cross-section perpendicular to an axial direction, and a plurality of fins, each of which extends outwardly from the tubular unit and extends in the axial direction, having a constant thickness in the axial direction. | 01-26-2012 |
| 20120019290 | INPUT CIRCUIT - An input terminal receives an external input signal. An input transistor is arranged such that the control terminal thereof is connected to the input terminal, and configured to change its state according to the input signal. An initializing transistor is arranged between the input terminal and the ground terminal. When the power supply for the input terminal is turned on, the control circuit turns on the initializing transistor, following which the control circuit turns off the initializing transistor. | 01-26-2012 |
| 20120019165 | ILLUMINATION DEVICE - The illumination device disclosed in the present specification has a light source, a touchless sensor for detecting proximity and movement of an object without contact, and a control unit for controlling the driving of the light source on the basis of an output of the touchless sensor. | 01-26-2012 |
| 20120018896 | SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes a semiconductor chip, an island having an upper surface to which the semiconductor chip is bonded, a lead arranged around the island, a bonding wire extended between the surface of the semiconductor chip and the upper surface of the lead, and a resin package collectively sealing the semiconductor chip, the island, the lead and the bonding wire, while the lower surface of the island and the lower surface of the lead are exposed on the rear surface of the resin package, and the lead is provided with a recess concaved from the lower surface side and opened on a side surface thereof. | 01-26-2012 |
| 20120018836 | SCHOTTKY BARRIER DIODE - A Schottky barrier diode includes a semiconductor layer having a plurality of trenches formed by digging in from a top surface and having mesa portions formed between adjacent trenches, and a Schottky metal formed to contact the top surface of the semiconductor layer including inner surfaces of the trenches. | 01-26-2012 |
| 20120016245 | PLETHYSMOGRAM SENSOR - The plethysmogram sensor disclosed in this specification includes a light emitting portion whose output is variable, a light receiving portion to detect a light emitted from the light emitting portion and penetrates a living body of a measured person, and a processing unit to acquire information about the plethysmogram of the measured person based on a measured value provided from the light receiving portion. | 01-19-2012 |
| 20120013496 | SWITCHED CAPACITOR TYPE D/A CONVERTER - A switched capacitor type D/A converter receives m-bit (m represents an integer) input data, and outputs an analog signal that corresponds to the input data value. Switch circuits are provided to respective bits of the input data, and are classified into two groups: a first group configured to turn on when the corresponding input data bit is 1, and to turn off when the corresponding input data bit is 0; and a second group configured to turn on when the corresponding input data bit is 0, and to turn off when the corresponding input data bit is 1. Each switch of the first and second switch groups is configured as a P-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The ground voltage 0 V is applied to the lower power supply terminal of each of the first and second inverters configured to supply a gate signal to each switch. | 01-19-2012 |
| 20120012861 | SEMICONDUCTOR DEVICE - A semiconductor device including a semiconductor layer of a first conductivity type; a plurality of body regions of a second conductivity type, each formed in a region extending from the surface of the semiconductor layer to a halfway portion of the same in the thickness direction, and each spaced apart from each other in a direction perpendicular to the thickness direction; source regions of the first conductivity type, each formed on the surface layer part of each body region and spaced away from the edges of each body region; a gate insulating film formed on the semiconductor layer; and gate electrodes formed on the gate insulating film. In the semiconductor layer, trenches extending between two neighboring source regions are formed by digging from the source of the semiconductor layer, the inside surface of the trenches are covered by the gate insulating film, and the gate electrodes comprise surface-facing parts, which face the surface of the semiconductor layer, and buried parts, which are buried in the trenches. | 01-19-2012 |
| 20120007636 | ANALOG SWITCH FOR SIGNAL SWINGING BETWEEN POSITIVE AND NEGATIVE VOLTAGES - An analog signal is input to an input terminal. An analog signal is output via an output terminal. A first transistor is an N-channel MOSFET, and is provided between the input terminal and the output terminal. A first resistor is provided between the gate of the first transistor and a first fixed voltage terminal (power supply terminal), which sets the gate of the first transistor to a high-impedance state. | 01-12-2012 |
| 20120007247 | Resin-Encapsulated Semiconductor Device - A resin-sealed semiconductor device includes a semiconductor chip including a silicon substrate; a die pad on which the semiconductor chip is secured via a solder layer; a sealing resin layer sealing the semiconductor chip; and lead terminals connected electrically with the semiconductor chip. One end portion of the lead terminals is covered by the sealing resin layer. The die pad and the lead terminals are formed of copper and a copper alloy, and the die pad is formed with a thickness larger than a thickness of the lead terminals, which is a thickness of 0.25 mm or more. | 01-12-2012 |
| 20120007124 | SEMICONDUCTOR LIGHT- EMITTING DEVICE - A semiconductor light emitting device (A) includes a semiconductor light emitting element ( | 01-12-2012 |
| 20120002692 | Surface-emitting laser light source using two-dimensional photonic crystal - The present invention intends to provide a surface-emitting laser light source using a two-dimensional photonic crystal in which the efficiency of extracting light in a direction perpendicular to the surface is high. In a laser light source provided with a two-dimensional photonic crystal layer created from a plate-shaped matrix body in which a large number of holes are periodically arranged and an active layer arranged on one side of the two-dimensional photonic crystal layer, the holes are created to be columnar with a predetermined cross-sectional shape such as a circular shape, and the main axis of each of the columnar holes is tilted to a surface of the matrix body. When provided with this two-dimensional photonic crystal layer, the surface-emitting laser source using a two-dimensional photonic crystal has a Q | 01-05-2012 |
| 20120001557 | PHASE SHIFT CONTROLLER - A positive counter starts counting, starting with an initial value, upon receiving a positive edge of a dimming pulse signal. A negative edge counter starts counting, starting with an initial value, upon receiving a negative edge of the dimming pulse signal. For each i-th (2≦i≦n) channel, the phase shift amount is calculated by multiplying a period count value that indicates the period of the dimming pulse signal by (i−1)/n. When the count value matches the phase shift amount, a burst control signal is switched to a first level. When the count value matches the phase shift amount, the burst control signal is switched to a second level. | 01-05-2012 |
| 20110317936 | Image Processing Method and Computer Program - To obtain an output image where contrast relating to the luminance of an input image has been adjusted. In an image processing method for adjusting the luminance value of each pixel contained in an input image, first, a closed region β(x, y) made up of a plurality of pixels in the input image is demarcated as a target region, and the target region is moved within the input image by predetermined pixel units. At this point, a maximum value and a minimum value of luminance energy defined as a luminance arrangement in the target region are calculated, and difference data of the luminance energy is calculated (step S | 12-29-2011 |
| 20110317850 | GENERATOR AND GENERATION METHOD OF PSEUDO-BASS - An absolute-value circuit outputs the absolute value of a signal SIN′ that corresponds to an input signal SIN. A clipping circuit clips the signal SIN′ that corresponds to the input signal, to a positive limit value and to a negative limit value. A first multiplier multiplies the signal SIN′ that corresponds to the input signal, by a predetermined coefficient. A first adder subtracts the output signal of the first multiplier from the output signal of the clipping circuit. A second adder sums a signal that corresponds to the output signal of the first adder and a signal that corresponds to the output signal of the absolute-value circuit. A third adder sums the input signal SIN and a signal that corresponds to the output signal of the second adder. | 12-29-2011 |
| 20110316449 | LOAD DRIVING CIRCUIT - A main transformer is arranged such that a load is connected to its secondary winding side. A first error amplifier generates a feedback signal that corresponds to the difference between a detection signal which indicates the electrical state of the load and a predetermined first reference voltage. A current generating resistor is arranged between a current generating transistor and a fixed voltage terminal. A second error amplifier is arranged such that the first input terminal receives the electric potential at a node that connects the current generating transistor and the current generating resistor, a predetermined second reference voltage is input to the second input terminal thereof, and the output terminal thereof is connected to the control terminal of the current generating transistor. An adjustment resistor is arranged between the output terminal of the first error amplifier and a node that connects the current generating transistor and the current generating resistor. | 12-29-2011 |
| 20110316157 | SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME - A semiconductor device according to the present invention includes: a semiconductor chip; a sealing resin layer formed on the semiconductor chip; and a post electrode formed in a through-hole penetrating through the sealing resin layer in a thickness direction, and having a hemispheric top surface. | 12-29-2011 |
| 20110316136 | SEMICONDUCTOR DEVICE WITH LEAD TERMINALS HAVING PORTIONS THEREOF EXTENDING OBLIQUELY - A semiconductor device in which a semiconductor chip, a lead frame and metal wires for electrically connecting the lead frame are sealed with sealing resin. The lead frame has a plurality of lead terminal portions, a supporting portion for supporting the semiconductor chip, and hanging lead portions supporting the supporting portion. Each of the lead terminal portions adjacent to the hanging lead portion is a chamfered lead terminal portion having, at its head, a chamfered portion formed substantially in parallel with the hanging lead portion so as to avoid interference with the hanging lead portion. | 12-29-2011 |
| 20110316014 | LED MODULE AND LED LIGHTING DEVICE - An LED module includes a substrate including a main surface and a rear surface that are opposed to each other. The LED module also includes a plurality of LED chips arranged on the main surface, a drive circuit chip that is provided on the substrate and that is provided for driving the plurality of LED chips, a first heat dissipator that is provided on the rear surface and that overlaps the plurality of LED chips as viewed in the thickness direction of the substrate, and a second heat dissipator that is provided at a position closer to the drive circuit chip than the first heat dissipator is. The second head dissipator has a thickness greater than that of the first heat dissipator. The LED module emits a uniform amount of light and color. | 12-29-2011 |
| 20110310604 | LED LAMP, LAMP CASE, LED MODULE AND LED LIGHTING APPARATUS - An LED lamp includes a plurality of LED modules arranged in direction x, a tubular enclosure for housing the LED modules that is open at ends spaced from each other in direction x, and end caps respectively closing the ends of the tubular enclosure in direction x. Each of the end caps is configured to diffuse light from the LED modules while transmitting the light, and includes an emission surface for emitting light in a direction z perpendicular to direction x. This arrangement ensures that the LED lamp has a good appearance even when it is made long. | 12-22-2011 |
| 20110309483 | Semiconductor Device - A semiconductor device that can cope with larger numbers of pins and finer pitches while suppressing lowering of the manufacturing yield and reliability includes: a semiconductor chip having a plurality of electrodes provided on an upper surface thereof; a plurality of lead terminals including inner lead portions disposed toward the semiconductor chip; a sheet-form wiring member having a plurality of conductors insulated from one another on one main surface thereof; and a sealing-resin layer for sealing at least the semiconductor chip, the inner lead portions and the wiring member. The electrodes of the semiconductor device and the inner lead portions of the lead terminals are electrically connected respectively to each other via the conductors of the wiring member. | 12-22-2011 |
| 20110307910 | Multi-Output Power Supply Device and Electric Apparatus Using Same - A multi-output power supply device ( | 12-15-2011 |
| 20110304447 | DRIVE RECORDER - The drive recorder disclosed in the present specification comprises a data collection portion for collecting image data and other driving condition data of a vehicle; and a control portion for designating a data compression system, a file format, and a hierarchy of a folder in an output destination when the image data is output to removable media according to a request made by a user. | 12-15-2011 |
| 20110304048 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus has a configuration in which multiple copper wiring layers and multiple insulating layers are alternately layered. A low-impedance wiring is formed occupying a predetermined region. A first wiring pattern includes multiple copper wiring members arranged in parallel with predetermined intervals in a first copper wiring layer, each of which has a rectangular shape extending in a first direction. A second wiring pattern includes multiple copper wiring members arranged in parallel with predetermined intervals in a second copper wiring layer adjacent to the first copper wiring layer, each of which has a rectangular shape extending in a second direction orthogonal to the first direction. The region occupied by the first wiring pattern and that occupied by the second wiring pattern are arranged such that they at least overlap. The first wiring pattern and the second wiring pattern are electrically connected so as to have the same electric potential. | 12-15-2011 |
| 20110303928 | LED LAMP - An LED lamp A includes a plurality of LED modules | 12-15-2011 |
| 20110299138 | LINEAR LIGHT SOURCE APPARATUS AND IMAGE READING APPARATUS - A linear light source device illuminates a document properly, and an image reading device includes such a light source device. The light source device includes a light source and a light-guiding member. The light-guiding member introduces the light emitted from the light source from one end portion in x-direction, cause the light to travel in x-direction, and emits the light from a light exit portion at one end in z-direction, which is orthogonal to x-direction. The light-guiding member includes, at the other end in z-direction, a light-reflecting portion that reflects light to the light exit portion. One end face of the light-guiding member in y-direction, which is orthogonal to x- and z-directions, is inclined so as to become closer to the other end face in y-direction with decreasing distance from the light exit portion in z-direction. This allows light to easily travel to the light-reflecting portion. | 12-08-2011 |
| 20110298780 | REFERENCE VOLTAGE GENERATION CIRCUIT, POWER SOURCE DEVICE, LIQUID CRYSTAL DISPLAY DEVICE - A reference voltage generation circuit of the disclosure includes a first amplifier circuit and a second amplifier circuit. The first amplifier circuit includes a first input stage including two npn transistors or two NMOS transistors having base terminals or gate terminals to which a variable voltage and a predetermined lower limit voltage are inputted. A first output stage includes a pnp transistor or a PMOS transistor having an emitter terminal or a source terminal connected to an output terminal of a reference voltage. A first amplifier stage controls the first output stage for equalizing the higher one of the variable voltage and the lower limit voltage with the reference voltage. The second amplifier circuit includes a second input stage including two npn transistors or two NMOS transistors having base terminals or gate terminals to which the reference voltage and a predetermined higher limit voltage are inputted, a second output stage includes a pnp transistor or a PMOS transistor having an emitter terminal or a source terminal connected to an output terminal for the reference voltage, and a second amplifier stage to control the second output stage for equalizing the reference voltage with the higher limit voltage. | 12-08-2011 |
| 20110298443 | LOAD DRIVING DEVICE AND ELECTRICAL APPARATUS - The load driving device disclosed in the specification includes a controller to generate a first control signal based on an input signal, a first output transistor to supply an output current to a load according to the first control signal, a first dividing circuit to output a first divided voltage by dividing a voltage across a first primary electrode and a second primary electrode of the first output transistor by a first transistor and a second transistor connected in serial, a first voltage generating circuit to output a first reference voltage, and a first comparator to supply a first over current detection signal to the controller based on the first reference voltage and the first divided voltage. | 12-08-2011 |
| 20110298384 | LED DRIVING DEVICE AND ELECTRICAL APPARATUS USING THE SAME - A LED driving device | 12-08-2011 |
| 20110297971 | LED LIGHTING DEVICE - An LED lighting device A | 12-08-2011 |
| 20110297964 | AC SWITCH - An AC switch includes a first compound semiconductor MOSFET and a second compound semiconductor MOSFET whose sources are connected with each other, a first output terminal connected to the drain of the first compound semiconductor MOSFET, and a second output terminal connected to the drain of the second compound semiconductor MOSFET. The withstand voltage between the first output terminal and the second output terminal in an off state is not less than 400 V. The resistance between the first output terminal and the second output terminal in an on state is not more than 20 mΩ. | 12-08-2011 |
| 20110294272 | SEMICONDUCTOR DEVICE PRODUCTION METHOD - This semiconductor device includes a first device and a second device provided on a semiconductor substrate and having different breakdown voltages. More specifically, the semiconductor device includes a semiconductor substrate, a first region defined on the semiconductor substrate and having a first device formation region isolated by a device isolation portion formed by filling an insulator in a trench formed in the semiconductor substrate, a first device provided in the first device formation region, a second region defined on the semiconductor substrate separately from the first region and having a second device formation region, and a second device provided in the second device formation region and having a higher breakdown voltage than the first device, the second device having a drift drain structure in which a LOCOS oxide film thicker than a gate insulation film thereof is disposed at an edge of a gate electrode thereof. | 12-01-2011 |
| 20110292226 | CONTROL CIRCUIT AND CONTROL METHOD FOR MOTOR - A control circuit generates a driving signal indicating an actuator torque. A first operation unit generates position, speed, and acceleration signals, based upon a detection signal indicating the actuator mover state. A second operation unit generates a first difference signal indicating the difference between a target signal and the position signal. A third operation unit generates a second difference signal indicating the difference between signals based on the first difference signal and the speed signal. A fourth operation unit generates a position control signal such that the second difference signal becomes zero. A fifth operation unit generates a third difference signal indicating the difference between signals based on a driving signal and the acceleration signal. A sixth operation unit generates a driving signal by summing a signal based on the position control signal and a disturbance estimation signal based on the third difference signal. | 12-01-2011 |
| 20110291733 | TRANSMITTER, INTERFACE DEVICE, AND CAR MOUNTED COMMUNICATION SYSTEM - A transmitter includes a capacitor from one end of which a charge voltage is derived; a first constant current source to generate a charge current for the capacitor; a second constant current source to generate a discharge current for the capacitor; a charge/discharge controller to perform charge/discharge control of the capacitor based on a logic level of a transmission input signal and a comparison result between the charge voltage and a reference voltage; an output stage to generate the transmission output signal, wherein a slew rate of which is set in response to the charge voltage, and wherein an amplitude of the transmission output signal is set in response to an output side power source voltage; a reference voltage generator to fluctuate the reference voltage depend on the output side power source voltage; and a constant current controller to fluctuate a current value of the charge current and the discharge current depend on the reference voltage. | 12-01-2011 |
| 20110291626 | SWITCHING POWER SOURCE DEVICE - A switching power source device disclosed in this specification includes a switching power source portion of nonlinear control method to generate an output voltage from an input voltage by performing an ON/OFF control of a switch element according to a comparison result between a feedback voltage and a reference voltage, wherein a ripple component is injected to either one of the feedback voltage and the reference voltage, and an offset control portion to adjust either one of the feedback voltage and the reference voltage for cancelling a DC offset of the output voltage caused by the ripple component. | 12-01-2011 |
| 20110287270 | METHOD FOR FORMING A BORON-CONTAINING THIN FILM AND MULTILAYER STRUCTURE - To provide a method for forming a boron-containing thin film, by which a uniform boron thin film with good adhesion can be formed on the surface of a processing object, and also to provide a multilayer structure. An electrolysis apparatus includes an anode | 11-24-2011 |
| 20110285526 | LIGHTING APPARATUS - A lighting apparatus of the present invention includes: a light source; a power source unit arranged to power the light source; a detector unit arranged to detect the deterioration of ability of the power source unit to power the light source; and a determination unit arranged to determine the life of the power source unit in response to the detector unit. | 11-24-2011 |
| 20110285498 | SURFACE-MOUNTED RESISTOR AND SUBSTRATE FOR MOUNTING THE SAME THEREON - A surface-mounted resistor includes a flat-type base member having a first surface, a second surface, and a lateral surface. Each of the first and second surfaces has a rectangular shape. The surface-mounted resistor also includes a resistance element faulted on the first surface; a pair of internal electrodes formed on both ends of the resistance element by being partially superposed with the resistance element; and a pair of external electrodes. Each of the external electrodes has a first bended portion having an L-shape formed by an internal electrode connection portion and a lateral portion, and a second bended portion having an L-shape formed by the lateral portion and a substrate connection portion. The internal electrode and the internal electrode connection portion are fixed to each other through a conductive fixation material, and a position of the base member is biased in a thickness direction toward the first bended portion. | 11-24-2011 |
| 20110285373 | PULSE GENERATING CIRCUIT AND PULSE WIDTH MODULATOR - A pulse generating unit receives a clock at a predetermined frequency, and generates a pulse signal which transits synchronously with the positive edge of the clock. A flip-flop acquires the pulse signal every time a positive edge occurs in an inverted clock output from the inverter. A logic gate multiplexes the pulse signal and the output of the flip-flop. A selector selects either the output of the logic gate or the pulse signal. | 11-24-2011 |
| 20110285331 | OSCILLATOR CIRCUIT WITH FREQUENCY SWEEP FUNCTION - With an oscillator circuit with a frequency sweep function, a first counter counts a reference clock for a number of counts that corresponds to a digital first setting signal, and generates a first count completion signal which is asserted on completion of the count. A D/A converter converts a digital second setting signal into an analog control voltage. A VCO oscillates with a frequency according to the control voltage. When the first count completion signal is asserted, the VCO is reset. An output combining unit receives the output signal of the VCO, generates the output signal of the oscillator circuit, and generates the first setting signal and the second setting signal. | 11-24-2011 |
| 20110284948 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME - A semiconductor device and a fabrication method for the semiconductor device are provided in which an increase of a forward loss is suppressed and a reverse recovery loss is reduced. | 11-24-2011 |
| 20110284904 | THIN-LIGHT EMITTING DIODE LAMP, AND METHOD OF MANUFACTURING THE SAME - A thin-type light emitting diode lamp includes a blue light emitting diode chip ( | 11-24-2011 |
| 20110284876 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten. | 11-24-2011 |
| 20110282605 | MOTOR DRIVING CIRCUIT - A test signal generating circuit generates an AC test signal. A driving unit supplies, to a motor, a driving voltage on which the test signal has been superimposed. A current detection circuit generates a detection signal that corresponds to an actual current that flows through a coil of the motor. A filter extracts, from the detection signal, a frequency component that corresponds to the test signal. A coil constant calculation circuit calculates the resistance value and the inductance value of the motor based upon the amplitude of the detection signal output from the filter, the amplitude of the test signal, and the phase difference between these signals. | 11-17-2011 |
| 20110280464 | Image Processing Method and Computer Program - To assign angle-dependent information to an input image in order to highlight and display one-dimensional patterns. First, data of an input image is inputted to a computer (Sa | 11-17-2011 |
| 20110279975 | MOTOR DRIVING CIRCUIT - A first calculation unit subtracts third digital data which indicates the minimum value of the duty ratio from first digital data which indicates the duty ratio of the PWM driving operation. A slope calculation unit generates slope data which is dependent on the temperature based upon second digital data which indicates the temperature. A second calculation unit multiplies the slope data by the output data of the first calculation unit. A third calculation unit sums the output data of the second calculation unit and the third digital data. A selector receives the output data of the third calculation unit and the third digital data, selects one data that corresponds to the sign of the output data of the first calculation unit, and outputs the data thus selected as a duty ratio control signal. | 11-17-2011 |
| 20110279404 | CONTROL CIRCUIT AND CONTROL METHOD FOR TOUCH PANEL - A coordinate generating unit provisionally determines the X-coordinate of a point touched by the user based upon a first panel current and at least one of first and second panel voltages in a first state, and provisionally determines the Y-coordinate of the point touched by the user based upon at least a third panel voltage and a second panel current. When the user touches the two points, i.e., the first and second points, at the same time, the coordinate generating unit determines the coordinates of the first and second points by combining the two provisionally determined X-coordinates and the two provisionally determined Y-coordinates, based upon the magnitude relation between the first and second panel voltages. | 11-17-2011 |
| 20110279072 | MOTOR DRIVING CIRCUIT - First and second A/D converters perform analog/digital conversion of first and second signals of a Hall signal so as to generate third and fourth signals as digital signals. A differential conversion circuit generates a fifth signal as a single-ended signal that corresponds to the difference between the third and fourth signals. An offset correction circuit corrects offset of the fifth signal so as to generate a sixth signal. An amplitude control circuit stabilizes the amplitude of the sixth signal to a predetermined target value, and generates its absolute value, thus generating a seventh signal. A control signal generating unit generates a control signal upon the seventh signal. A driver circuit drives a motor according to the control signal. | 11-17-2011 |
| 20110279045 | CONTROL CIRCUIT FOR SWITCHING POWER SUPPLY - A soft-start circuit generates a soft-start voltage Vss having a voltage level that rises over time. A pulse width modulator generates a PWM signal having a duty ratio adjusted such that a feedback voltage Vout′ that corresponds to the output voltage Vout of the switching power supply matches the soft-start voltage Vss. A driver circuit controls a switching element according to the PWM signal. A capacitor is arranged such that one terminal thereof is set to a fixed electric potential. A current source generates a charge current that flows intermittently in synchronization with the PWM signal so as to charge the capacitor. The soft-start circuit outputs, as the soft-start voltage Vss, a voltage that occurs at the capacitor. | 11-17-2011 |
| 20110279043 | CURRENT DRIVE CIRCUIT FOR LIGHT EMITTING DIODE - A pulse width modulated dimming pulse signal PWM is input to a control input terminal P | 11-17-2011 |
| 20110278623 | METHOD FOR MANUFACTURING LED MODULE, AND LED MODULE - A method for manufacturing an LED module is provided that includes the steps of mounting an LED chip | 11-17-2011 |
| 20110278467 | WATER PURIFIER - The disclosed water purifier comprises an outer wall, a RAW water inflow section that allows inflow of RAW water from outside said outer wall, a purifying section, an ultraviolet ray sterilizing section that has an ultraviolet ray source, a purified water outflow section that allows purified water that has been purified in said purifying section and sterilized in said ultraviolet ray sterilizing section to flow to the outside of said outer wall, a condition-detecting unit, and a control unit that controls generation of ultraviolet rays from said ultraviolet ray source according to the detection by said condition-detecting unit. | 11-17-2011 |
| 20110276291 | ELECTROSTATIC CAPACITANCE TYPE INPUT DEVICE AND CALCULATION METHOD FOR CALCULATING APPROACH POSITION OF CONDUCTOR - An electrostatic capacitance type input device includes: first electrodes arranged in a first direction and extending in a second direction intersecting the first direction; second electrodes arranged in the second direction and extending in the first direction; a storage unit storing first direction detection values obtained through the first electrodes resulting from the change in capacitance between a first conductor and the electrodes, and storing second direction detection values obtained through the second electrodes resulting from the change in capacitance between the first conductor and the electrodes; and a calculation unit, which generates first map values from a first value and a second value obtained, respectively, by processing at least one of the first direction detection values and at least one of the second direction detection values. The calculation unit determines whether the first conductor has approached the first electrodes and second electrodes using the first map values. | 11-10-2011 |
| 20110274295 | NEGATIVE-VOLTAGE CHARGE PUMP CIRCUIT - A control unit alternately repeats a first state in which a first switch and a third switch are on and a second state in which a second switch and a fourth switch are on. A voltage detection unit compares the output voltage that occurs at one terminal (OUT terminal) of an output capacitor with a negative threshold voltage, and generates an abnormality detection signal which is asserted when the output voltage is higher than the threshold voltage Vt. When the abnormality detection signal is asserted, the control unit switches the on resistance of the first switch to a value that is higher than that in a normal state. | 11-10-2011 |
| 20110273871 | LED LAMP - An LED lamp (A | 11-10-2011 |
| 20110273431 | MULTIPLEXER FOR DIFFERENTIAL SIGNAL - A multiplexer receives multiple differential signals, selects one differential signal, and outputs, via an output port, the differential signal thus selected. The multiple differential signals are respectively input to multiple differential input ports. Multiple buffers are respectively provided to the multiple differential input ports. Each buffer includes a differential input terminal connected to a corresponding differential input port, and a differential output terminal connected to an output port. Each buffer is configured to be capable of switching states, according to the control signal, between an enable state in which a differential signal that corresponds to a differential signal input to the differential input terminal is output, and a disable state in which current consumed by the buffer becomes substantially zero, and the differential output terminal thereof is set to a high-impedance state. | 11-10-2011 |
| 20110273231 | SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit receives an input current, and supplies, to a different circuit, an output current that corresponds to the input current. A first terminal of a first variable resistor is connected to an input terminal. A first transistor and a second transistor are sequentially arranged in series between a power supply terminal and a second terminal of the first variable resistor. A third transistor and a fourth transistor are sequentially arranged in series between the power supply terminal and an output terminal. The gates of the first transistor and the third transistor are each connected to the second terminal of the first variable resistor. The gates of the second transistor and the fourth transistor are each connected to the input terminal. The first variable resistor is configured to be capable of switching the resistance value thereof according to the input current. | 11-10-2011 |
| 20110273104 | CONTROL CIRCUIT FOR SWITCHING POWER SUPPLY - A control IC controls a switching power supply configured to supply a driving voltage Vout to one terminal of an LED string which is driven in an intermittent manner. A sample-and-hold circuit performs sampling of a detection voltage Vs that corresponds to a driving voltage Vout in the on period, and holds the sampled detection voltage Vs in the off period. In the off period, a pulse modulator generates a pulse signal having a duty ratio adjusted such that a hold detection voltage VsH output from the sample-and-hold circuit matches the detection voltage Vs. A driver drives a switching transistor according to the pulse signal. | 11-10-2011 |
| 20110272665 | Nitride semiconductor device - An inventive nitride semiconductor device includes: a substrate; a first buffer layer provided on the substrate, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; a second buffer layer provided on the first buffer layer in contact with the first buffer layer, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; and a device operation layer of a Group III nitride semiconductor provided on the second buffer layer; wherein an average lattice constant LC | 11-10-2011 |
| 20110267023 | DC VOLTAGE CONVERSION MODULE, SEMICONDUCTOR MODULE, AND METHOD OF MAKING SEMICONDUCTOR MODULE - A DC voltage conversion module includes a substrate, an input terminal, an output terminal, a ground terminal, a DC voltage conversion control element mounted on the substrate, a coil mounted on the substrate and connected to the DC voltage conversion control element and the output terminal, an input-side capacitor mounted on the substrate and connected to the input terminal and the ground terminal, and an output-side capacitor mounted on the substrate and connected to the output terminal and the ground terminal. The input terminal, the output terminal and the ground terminal project in a predetermined projecting direction parallel to each other. The ground terminal is arranged between the input terminal and the output terminal in a direction perpendicular to the projecting direction. | 11-03-2011 |
| 20110266414 | METALLIC STRUCTURE AND PHOTODETECTOR - In a metallic structure including a metallic nano-chain with plasmon resonance absorption, a metallic nanoparticle forming the metallic nano-chain is formed in a circular, triangle, or rhomboid shape. The wavelength selectivity can be increased also by forming a closed region by mutually linking all of metallic nanoparticles that are mutually linked with bottlenecks. In a photodetector, a photodetection unit including a current detection probe, a nano-chain unit, and a current detection probe is arranged on a substrate. The nano-chain unit is a metallic structure with plasmon resonance absorption, where metallic nanoparticles are mutually linked with bottlenecks. Each current detection probe has a corner whose tip is formed with a predetermined angle, and this corner is arranged to face the tip of the nano-chain unit, i.e., a corner of the metallic nanoparticle. Photodetection with high wavelength selectivity is performed based on a change in the initial voltage of the current-voltage characteristic. | 11-03-2011 |
| 20110261504 | SOLID ELECTROLYTIC CONDENSERS AND METHODS FOR PREPARING THE SAME - The present invention provides solid electrolytic condensers with increased heat resistance and decreased ESR, and methods for preparing the same. The solid electrolytic condensers of the present invention comprise a porous sintered body | 10-27-2011 |
| 20110261503 | SOLD ELECTROLYTIC CAPACITOR, AND METHOD OF MANUFACTURING THE SAME - Provided is a method of manufacturing a solid electrolytic capacitor that suppresses spreading up of a solution. The method includes forming a porous sintered body made of a valve metal and having an anode wire sticking out therefrom; forming an insulating layer made of a fluorine resin, so as to surround the anode wire; and forming a dielectric layer on the porous sintered body; forming a solid electrolyte layer on the dielectric layer, after forming the insulating layer. The process of forming the insulating layer includes melting granular particles made of a fluorine resin. | 10-27-2011 |
| 20110261261 | IMAGE CORRECTION PROCESSING CIRCUIT, SEMICONDUCTOR DEVICE, AND IMAGE CORRECTION PROCESSING DEVICE - The image correction processing device ( | 10-27-2011 |
| 20110261075 | ELECTRONIC IMAGE VIEWING DEVICE - A common image of a clock or the like is always displayed in a space that is not covered by a horizontally long image or a vertically long image. Positions of corners of the images on the side diagonally opposite the common image are made to match. When a switch is made between a horizontally long image and a vertically long image, an animation effect is added to alleviate any feeling of strangeness. Image comments displayed for the vertically long image are divided and distributed appropriately in the space. Either a horizontally long image or a vertically long image is displayed in the center of a display screen that is vertically and horizontally isotropic and assumes the shape of a square rotated 45 degrees or a circle. An ordinary display device is tilted 45 degrees to form a square display screen that is rotated 45 degrees. Electronic paper is used, and slow rewriting speed is addressed by rewriting the image during nighttime sleeping hours. The speed at which monochrome images are rewritten is matched with that of color images to alleviate any feeling of strangeness when the monochrome and color images are combined. | 10-27-2011 |
| 20110260629 | Illuminance Sensor, and Electronic Equipment and Semiconductor Device Using the Same - In an illuminance sensor, a photoelectric converter ( | 10-27-2011 |
| 20110254864 | CALCULATION DEVICE, MOVEMENT DETECTION DEVICE, AND ELECTRONIC INSTRUMENT - The calculation device ( | 10-20-2011 |
| 20110254722 | REMOTE CONTROL SIGNAL RECEIVER AND ELECTRICAL APPARATUS - A remote control signal receiver includes a receiving sensor to receive a remote control signal for remotely controlling an electrical apparatus, a receiving signal processor to judge whether or not the receiving sensor received the remote control signal, to recognize a direction included in the remote control signal and to generate an internal signal in response to the direction in accordance with the receiving signal, and an intermittent controller to drive the receiving sensor intermittently during a standby period of the electrical apparatus. | 10-20-2011 |
| 20110254676 | DRIVE RECORDER - A drive recorder of the invention includes a trigger judgment circuit that calculates, with respect to acceleration data of a vehicle, first and second moving averages as moving averages of two different time series, and that generates a trigger signal according to a result of comparing a differential value of the first and second moving averages or an absolute value of the differential value with a predetermined threshold value. | 10-20-2011 |
| 20110254515 | CHARGE CONTROL DEVICE - A charge control device of the disclosure including a charger to perform a constant current charge control to maintain a charge current to an electric double-layer capacitor as a predetermined charge current value for a constant current charge period after a beginning of a charge of the electric double-layer capacitor. | 10-20-2011 |
| 20110250736 | SCHOTTKY BARRIER DIODE AND METHOD FOR MAKING THE SAME - A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed. | 10-13-2011 |
| 20110248642 | LIGHT EMITTING DEVICE CONTROL CIRCUIT DEVICE AND CONTROL METHOD OF THE CONTROL CIRCUIT DEVICE - The light emitting device control circuit device | 10-13-2011 |
| 20110248335 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first conductivity type semiconductor substrate; and a plurality of second conductivity type semiconductor regions, the respective second conductivity type semiconductor regions being embedded in a plurality of stripe shaped trenches formed in the semiconductor substrate so that the respective second conductivity type semiconductor regions are extended in the row direction or the column direction in parallel with a first principal surface of the semiconductor substrate and are spaced in a fixed gap mutually. The semiconductor substrate and the plurality of the semiconductor regions are depleted by a depletion layer extended in the direction in parallel to the first principal surface from a plurality of pn junction interfaces, and the respective pn junction interfaces are formed between the semiconductor substrate and the plurality of the semiconductor regions. | 10-13-2011 |
| 20110244559 | Fabrication Method of Microfluidic Circuit, and Microfluidic Circuit Fabricated by Method Thereof - A fabrication method of a microfluidic circuit is provided, dispensable of mask registration, absent of deviation in mask positioning, and inexpensive in fabrication cost. The fabrication method of a microfluidic circuit has a light transmissive substrate stacked on a light absorptive substrate, and the light transmissive substrate welded with the light absorptive substrate for bonding by directing light through the light transmissive substrate. The microfluidic circuit includes a microchannel at the bottom face of the light transmissive substrate and/or at the top face of the light absorptive substrate. The method includes the step of forming, at the light transmissive substrate, a light attenuation region attenuating transmittance of light towards the microchannel when light is directed through the light transmissive substrate. | 10-06-2011 |
| 20110241224 | WIRE BONDING STRUCTURE OF SEMICONDUCTOR DEVICE AND WIRE BONDING METHOD - A wire bonding structure is provided which includes a wire having a first bonding portion and a second bonding portion. The first bonding portion is bonded to an electrode pad of a semiconductor element, whereas the second bonding portion is bonded to a pad portion of a lead. The first bonding portion includes a front bond portion, a rear bond portion, and an intermediate portion sandwiched between these two bond portions. The front bond portion and the rear bond portion are bonded to the electrode pad more strongly than the intermediate portion is. In the longitudinal direction of the wire, the second bonding portion is smaller than the first bonding portion in bonding length. | 10-06-2011 |
| 20110237064 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor chip having a wire and a passivation film formed on the outermost surface with an opening partially exposing the wire. A resin layer is stacked on the semiconductor chip and provided with a through-hole in a position opposed to a portion of the wire facing the opening. A pad is formed on a peripheral portion of the through-hole in the resin layer and in the through-hole so that an external connection terminal is arranged on the surface thereof. The peripheral portion of the resin layer is formed more thickly than the remaining portion of the resin layer other than the peripheral portion. | 09-29-2011 |
| 20110234260 | CONSTANT VOLTAGE CIRCUIT - A current source generates a reference current. A first transistor is a depletion-type MOSFET arranged such that one terminal thereof is connected to the current source and its gate is connected to its source. A second transistor is an enhancement-type MOSFET arranged such that one terminal thereof is connected to the other terminal of the first transistor, the other terminal thereof is connected to a fixed voltage terminal, and its gate and drain are connected. A third MOSFET is an enhancement-type P-channel MOSFET arranged such that one terminal thereof is connected to the current source, the other terminal thereof is connected to the fixed voltage terminal, and its gate is connected to a connection node connecting the first and second transistors. A constant voltage circuit outputs at least a voltage that corresponds to the gate voltage of the third transistor or a voltage that corresponds to the gate voltage thereof. | 09-29-2011 |
| 20110234129 | MOTOR DRIVING CIRCUIT - First and second A/D converters perform analog/digital conversion of first and second signals of a Hall signal so as to generate third and fourth signals as digital signals. A differential conversion circuit generates a fifth signal as a single-ended signal that corresponds to the difference between the third and fourth signals. An offset correction circuit corrects offset of the fifth signal so as to generate a sixth signal. An amplitude control circuit stabilizes the amplitude of the sixth signal to a predetermined target value, and generates its absolute value, thus generating a seventh signal. A control signal generating unit generates a control signal based upon the seventh signal. A driver circuit drives a motor according to the control signal. | 09-29-2011 |
| 20110233725 | SEMICONDUCTOR DEVICE AND METHOD OF DESIGNING THE SAME - A semiconductor device includes a first wiring layer, a second wiring layer and an insulating layer provided between the first wiring layer and the second wiring layer. A capacitor has a first electrode formed on the first wiring layer and a second electrode formed on the second wiring layer in such a manner that the second electrode overlaps with the first electrode. To the first electrode, two connection wirings are connected and, to the second electrode, two connection wirings are connected. The two connection wirings are connected to each other with low DC impedance substantially only through the first electrode. Similarly, the two connection wirings are connected to each other with low DC impedance substantially only through the second electrode. | 09-29-2011 |
| 20110230984 | ILLUMINATION DEVICE - Provided is an illumination device which can be used in a manner suitable for the condition. The exchange time information to be acquired from an LED illumination lamp by an illumination instrument or the exchange time information to be stored by the illumination instrument itself is recognized by a controller at and via an ON/OFF control-dedicated switch control line of the LED illumination lamp. Alternatively, the acquisition of the exchange time information and ON/OFF-control of the LED illumination lamp are performed by the controller at hand via a general-purpose power line. The exchange time information is acquired from the illumination instrument in an OFF period of the LED illumination lamp, so that the exchange information can be acquired by simple information transmission means regardless of the ON-period noise. The exchange time information acquisition function is checked on a daily basis so as to cope with an alarm after a long period. The exchange time check result is stored so as to execute the alarm at an appropriate timing. The exchange time information held by the LED illumination lamp itself is transmitted firstly to the illumination instrument by simple information transmission means. The information is recognized by using a control path existing between the illumination instrument and the controller at hand. | 09-22-2011 |
| 20110228517 | LED LAMP - An LED lamp A | 09-22-2011 |
| 20110227542 | CHARGE CONTROL DEVICE AND LOAD DRIVING DEVICE - A charge control device includes a charge control circuit to control a charge of a secondary battery by controlling an output stage connected between a power supply and the secondary battery. The charge control circuit includes a first error amplifier to generate a first error voltage in response to a difference between a predetermined first reference voltage and a first feedback voltage. The value of the first feedback voltage is determined in accordance with a primary current supplied from the power supply to the output stage. The charge control circuit also includes a second error amplifier to generate a second error voltage in response to a difference between either one of a predetermined second reference voltage and the first error voltage, and a second feedback voltage. The value of the second feedback voltage is determined in accordance with a charge current supplied from the output stage to the secondary battery. The charge control circuit also includes a control signal generator to generate the control signal of the output stage in response to the second error voltage. | 09-22-2011 |
| 20110221014 | PRESSURE SENSOR AND METHOD FOR MANUFACTURING THE PRESSURE SENSOR - A pressure sensor of the present invention includes a substrate inside which a reference pressure chamber is formed, a closing body filled in a through-hole formed in the substrate such that the closing body penetrates through a portion between the surface of the substrate and the reference pressure chamber, and hermetically closes the reference pressure chamber, and a strain gauge provided inside the substrate between the surface of the substrate and the reference pressure chamber, and the electric resistance thereof being capable of changing by strain deformation of the substrate. | 09-15-2011 |
| 20110216536 | ILLUMINATION DEVICE - An illumination device that includes a plurality of LED chips and a heat-dissipating unit including a fan configured to ventilate air. The plurality of LED chips are cooled as heat generated in the plurality of LED chips is transferred to the air ventilated by the fan. | 09-08-2011 |
| 20110215739 | LED LIGHTING DEVICE - An LED lighting device includes a plurality of LED chips and a pair of side mounting faces. The distance between the side mounting faces becomes smaller from the base side toward the extremity side in the x direction. The side mounting faces face mutually opposite sides in the y direction. Also, the distance between the side mounting faces becomes shorter from the back side toward the front side in the z direction that is perpendicular to both the x direction and the y direction. The plurality of LED chips include LED chips mounted on the pair of side mounting faces. The LED lighting device illuminates an illumination target with a uniform illuminance distribution. | 09-08-2011 |
| 20110210414 | Infrared sensor - An infrared sensor according to the present invention includes a semiconductor substrate, a thin-film pyroelectric element made of lead titanate zirconate and disposed on the semiconductor substrate, a coating film coating the pyroelectric element and having a topmost surface that forms a light receiving surface for infrared rays, and a cavity formed to a shape dug in from a top surface of the semiconductor substrate at a portion opposite to the pyroelectric element and thermally isolates the pyroelectric element from the semiconductor substrate. | 09-01-2011 |
| 20110205412 | SOLID STATE IMAGE SENSOR FOR COLOR IMAGE PICK UP - A solid state image sensor for color image pick up, including: a circuit section formed on a substrate; a lower electrode layer arranged on the circuit section; a compound semiconductor thin film with a chalcopyrite structure, which is arranged on the lower electrode layer; a transparent electrode layer arranged on the compound semiconductor thin film; and a visible light filter arranged on the transparent electrode layer, wherein the lower electrode layer, the compound semiconductor thin film and the transparent electrode layer are sequentially stacked on the circuit section, and in addition, thin a film thickness of the compound semiconductor thin film below the visible light filter, and absorb only visible light. A solid state image sensor for color image pick up is provided, which does not require an infrared removal filter for luminous efficacy correction, and matches color reproduction characteristics thereof with human luminous efficacy. | 08-25-2011 |
| 20110204795 | LIGHT EMISSION DRIVING DEVICE, ILLUMINATION DEVICE, DISPLAY DEVICE - A light emission driving device sequentially on a time division basis drives a red light source | 08-25-2011 |
| 20110204393 | LED LAMP - An LED lamp (A | 08-25-2011 |
| 20110204355 | ZINC OXIDE BASED SUBSTRATE AND METHOD FOR MANUFACTURING ZINC OXIDE BASED SUBSTRATE - A zinc oxide based substrate satisfies a condition that impurities Si, C, Ge, Sn, and Pb which are Group IV elements each have a concentration of 1×10 | 08-25-2011 |
| 20110200209 | LEVEL ADJUSTING CIRCUIT - A circuit configured to adjust the level of an audio signal includes filters each of which is configured to receive an audio signal, and to pass a band set for the filter. Variable gain amplifiers are severally provided to the respective filters, and each variable gain amplifier amplifies the output signal of the corresponding filter. An adder sums the input audio signal and the output signals of the variable gain amplifiers. A control unit controls the level of the output signal of each of the variable gain amplifiers, and controls the gain of each variable gain amplifier according to the level thus monitored. | 08-18-2011 |
| 20110199810 | Data Holding Device - A data holding device according to the present invention includes a loop structure portion LOOP for holding data using a plurality of logic gates (NAND | 08-18-2011 |
| 20110198750 | SEMICONDUCTOR CHIP AND METHOD FOR MANUFACTURING SAME, ELECTRODE STRUCTURE OF SEMICONDUCTOR CHIP AND METHOD FOR FORMING SAME, AND SEMICONDUCTOR DEVICE - A semiconductor chip according to the present invention includes a semiconductor substrate, a bump of a metal projecting from a surface of the semiconductor substrate, and an alloy film covering the entire surface of the bump, the alloy film being composed of an alloy of the metal of the bump and a second metal. | 08-18-2011 |
| 20110193848 | LEVEL SHIFTER CIRCUIT, LOAD DRIVE DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE - The level shifter circuit includes a differential amp ( | 08-11-2011 |
| 20110188163 | ABNORMALITY DETECTION CIRCUIT, LOAD DRIVING DEVICE, AND ELECTRICAL APPARATUS - An abnormality detection circuit monitors the sink current Irnf of a H-bridge circuit and determines the presence of an abnormal state if the sink current is not detected for a predetermined time. The abnormality detection circuit includes a clock pulse generator, a counter and a NMOS transistor. The abnormality detection circuit includes a clock pulse generator arranged to generate a clock pulse of a predetermined frequency, and a counter arranged so that a count value is incremented every time the clock pulse is provided to the counter and arranged so that the count value is reset when the sink current is detected. The counter generates a first abnormality detection signal that changes from a normal logic level to an abnormal logic level when the count value reaches a predetermined value without being reset. | 08-04-2011 |
| 20110187439 | OUTPUT CIRCUIT - A low-side off-detection signal compares the gate signal of a low-side transistor with a predetermined first level to generate a low-side off-detection signal indicating that the low-side transistor is off. The low-side detection transistor is of the same type as the low-side transistor, with the source connected to the ground terminal, and the gate receiving the low-side transistor gate signal. A first resistor is arranged between the drain of the low-side detection transistor and the power supply terminal. A first bypass circuit is arranged in parallel with the first resistor, and is configured to switch to the conduction state when a control signal is a level which instructs the low-side transistor to switch off, and to switch to the cut-off state when the control signal level instructs the low-side transistor to switch on. The drain signal of the low-side detection transistor is output as the low-side off-detection signal. | 08-04-2011 |
| 20110187302 | SEMICONDUCTOR DEVICE - Multiple pads are provided to a semiconductor chip of a semiconductor device. A first pad is arranged on a path for a first signal set to a voltage that corresponds to a first level in the active state. The first signal is input to the semiconductor chip from outside the semiconductor device, or is output to outside the semiconductor device from the semiconductor chip. A second pad is provided in order to receive a setting voltage. A first pin is connected to a first pad via a connection member, and receives the first signal from outside the semiconductor device, or from the semiconductor chip via the first pad. A second pin receives, from outside, a second signal set to a voltage that corresponds to the first level or a second level which is the complement of the first level. | 08-04-2011 |
| 20110186962 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes an interlayer dielectric film, a passivation film, made of an insulating material, formed on the interlayer dielectric film, an uppermost wire, made of a material mainly composed of copper, formed between the surface of the interlayer dielectric film and the passivation film, and a wire covering film, made of a material mainly composed of aluminum, interposed between the passivation film and the surface of the uppermost wire for covering the surface of the uppermost wire. | 08-04-2011 |
| 20110186928 | Semiconductor device - A semiconductor device according to the present invention includes a semiconductor substrate of a first conductivity type having a top surface and a rear surface, a semiconductor layer of a second conductivity type formed on the top surface of the semiconductor substrate, having a top surface and a rear surface, and having the rear surface in contact with the top surface of the semiconductor substrate, a body region of the first conductivity type formed in a top layer portion of the semiconductor layer, a first impurity region of the second conductivity type formed in a top layer portion of the semiconductor layer and spaced apart from the body region, a second impurity region of the second conductivity type formed in a top layer portion of the body region and spaced apart from a peripheral edge of the body region, a gate electrode formed on the semiconductor layer and opposed to a portion between the peripheral edge of the body region and a peripheral edge of the second impurity region, a field insulating film formed in a portion of the top surface of the semiconductor layer between the body region and the first impurity region, and a plurality of field plates formed on the field insulating film and spaced apart from each other, and a spacing between adjacent field plates decreases as the body region is approached from the first impurity region. | 08-04-2011 |
| 20110181765 | IMAGING DEVICE - A circuit unit is formed on a supporting member, and a solid state imaging element is formed on the circuit unit. Also, a lens mechanism is provided on a front surface of the solid state imaging element. The solid state imaging element, the circuit unit and the lens mechanism are mounted in a frame body. In addition, photoelectric conversion elements are attached to the outside of the frame body. Each of the photoelectric conversion elements is configured to have almost no light reception sensitivity to the light wavelength region of more than 300 nm and have sensitivity to the light wavelength region of 300 nm or less. The photoelectric conversion element thus configured can sense particularly flames, electric sparks and the like among ultraviolet light. | 07-28-2011 |
| 20110181582 | Load Driving Device and Portable Apparatus Utilizing Such Driving Device - A load such as an LED and a constant-current source are connected in series with each other between the node of a dc-dc conversion type power supply circuit providing an output voltage and the ground. The constant-current source provides a constant current Io, the magnitude of which can be adjusted. The power, supply circuit controls the output voltage such that the voltage drop across the constant-current source serving as a detection voltage becomes equal to a reference voltage. Thus, the load current can be varied within a predetermined range while avoiding the power loss due to an increase in the load current, thereby always permitting efficient operation of the load. | 07-28-2011 |
| 20110181197 | LIGHT SOURCE TURN-ON/OFF CONTROLLER - A light source turn-on/off controller includes an input section of a turn-on/off timing signal, a PWM signal generating section for generating a pulse signal responding to a rise or a fall of the timing signal, a duty cycle of the pulse signal changing so as to simulate a rise or a fall of emission in turn-on or turn-off of a filament, an emission control section for controlling an emitting section responding to the pulse signal from the PWM signal generating section, and a storage section for storing a control data table for duty cycle control by the PWM signal generating section. The control data table includes a rise table to be referred to in the rise of emission and a fall table to be referred to in the fall of emission, and each of the rise table and the fall table indicates association between elapsed time from the rise or the fall of the timing signal and the duty cycle of the pulse signal, and a relationship between the tables indicates that they cannot be superposed on each other. | 07-28-2011 |
| 20110180899 | SEMICONDUCTOR DEVICE - A semiconductor device has a package structure provided with leads that are external connection terminals. A base substance is an island, and at least the surface thereof is formed of a conductive material. A semiconductor substrate is mounted on the surface of the base substance, and a ground potential is supplied from the surface of the base substance. A shunt capacitor is provided with an electrode pair of a first electrode and a second electrode formed in parallel, and mounted with the first electrode being electrically connected to the surface of the base substance. An internal bonding wire connects a pad provided on the semiconductor substrate for external connection, to the second electrode of the shunt capacitor. The lead is the external connection terminal of the semiconductor device. An external bonding wire connects the lead to the second electrode of the shunt capacitor. | 07-28-2011 |
| 20110180688 | PHOTOELECTRIC CONVERTER AND PROCESS FOR PRODUCING THE SAME AND SOLID STATE IMAGING DEVICE - A photoelectric converter includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high-resistivity layer in its surface; a transparent electrode layer disposed on the compound semiconductor thin film; an interlayer insulating layer; a zinc-oxide-based compound semiconductor thin film; and electrodes. With application of a reverse bias voltage between the transparent electrode layer and the lower electrode layer, and application of a bias voltage between the electrodes, the photoelectric converter photoelectrically converts ultraviolet region light. Thus, the photoelectric converter achieves photoelectric conversion of light in a wider region. Such a photoelectric converter and a process for producing the same, and a solid state imaging device to which the photoelectric converter is applied are provided. | 07-28-2011 |
| 20110176571 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap energy of the n-type clad layer is smaller than of the p-type clad layer. | 07-21-2011 |
| 20110176248 | PROTECTION CIRCUIT - A first protection circuit includes a first diode and a first transistor. The anode of the first diode is connected to a terminal to be protected. The first transistor is configured as an N-channel MOSFET, and arranged such that the first terminal of the conduction channel thereof is connected to the cathode of the first diode, and the second terminal of the conduction channel thereof, and the gate and the back gate thereof are connected to a fixed voltage terminal. The first transistor is configured as a floating MOSFET formed within an N-type well formed in a P-type semiconductor substrate. The first diode is formed in the shared N-type well in which the first transistor is formed. The cathode of the first diode and the first terminal of the conduction channel of the first transistor are connected to the N-type well. | 07-21-2011 |
| 20110175637 | METHOD FOR MANUFACTURING PROBE CARD, PROBE CARD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING PROBE - Provided is a method for manufacturing a probe card which inspects electrical characteristics of a plurality of semiconductor devices in batch. The method includes: a step of forming a plurality of probes, which are to be brought into contact with external terminals of the semiconductor devices, on one side of a board which forms the base body of the probe card; a step of forming on the board, by photolithography and etching, a plurality of through-holes which reach the probes from the other side of the board; a step of forming, in the through-holes, through electrodes to be conductively connected with the probes, respectively; and a step of forming wiring, which is conductively connected with the through electrodes, on the other side of the board. | 07-21-2011 |
| 20110175193 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device according to the present invention includes a semiconductor substrate, and an interlayer dielectric film, formed on the semiconductor substrate, having a multilayer structure of a compressive stress film and a tensile stress film. | 07-21-2011 |
| 20110173466 | ELECTRONIC DEVICE - The electronic device according to the present invention comprises a power supply; a processing section which has a nonvolatile register and performs predetermined processing by inputting and outputting data to and from the nonvolatile register on the basis of power fed from the power supply; an external signal inputting section for inputting an external signal to the processing section; and a power feed control section, which interrupts power feeding from the power supply to the processing section, while maintaining responsiveness to the external signal in a state in which the processing state of the processing section is stored in the nonvolatile register, and resumes power feeding from the power supply to the processing section in response to the external signal. | 07-14-2011 |
| 20110170698 | FREQUENCY MODULATOR AND FM TRANSMISSION CIRCUIT USING THE SAME - An input signal is input via a first resistor to an inverting input terminal of an operational amplifier. A second resistor is provided on a feedback path between an output terminal and the inverting input terminal of the operational amplifier. A control voltage Vcnt output from the operational amplifier is input to a VCO. A frequency divider frequency-divides an output signal Sout of the VCO. A phase comparator compares an output signal from the frequency divider with a reference clock signal and outputs a voltage according to a phase difference. A loop filter removes a high-frequency component of an output voltage Vcp of the phase comparator and outputs the voltage to a non-inverting input terminal of the operational amplifier. | 07-14-2011 |
| 20110169135 | SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR STORAGE DEVICE - A semiconductor-storage-device manufacturing method of the present invention is a method for manufacturing a semiconductor storage device provided with a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode, and the method includes a step of embedding a first metal plug and a second metal plug in an insulating layer; a step of forming a covering layer that covers at least the second metal plug while securing apart that comes into electric contact with the first metal plug; a step of forming a deposit structure by sequentially depositing a material for the lower electrode, a material for the ferroelectric film, and a material for the upper electrode after forming the covering layer; and a step of forming the ferroelectric capacitor by etching and removing other parts except a part of the deposit structure such that the part of the deposit structure remains on the first metal plug. | 07-14-2011 |
| 20110158435 | AUDIO SIGNAL AMPLIFIER CIRCUIT - An inverting amplifier which drives headphones via an output capacitor includes: an operational amplifier, an input resistor having a first terminal via which an audio signal to be amplified is received, and a second terminal connected to an inverting input terminal of the operational amplifier; and a feedback resistor having a first terminal connected to an inverting input terminal of the operational amplifier, and a second terminal connected to the output terminal. A reference voltage source generates a bias voltage Vb, and supplies it to the non-inverting input terminal. A discharging path includes a discharging resistor and a first switch arranged in series between an output terminal of the reference voltage source and an fixed voltage terminal. A second switch is arranged between the output terminal of the operational amplifier and a node on the discharging path where the electric potential is higher than it is at the discharging resistor. | 06-30-2011 |
| 20110156226 | INTERPOSER AND SEMICONDUCTOR DEVICE - An interposer and a semiconductor device including the interposer are provided, which can prevent thermal warpage of an insulative substrate thereof. The interposer is provided with a semiconductor chip in a semiconductor device andmay be disposed between the semiconductor chip and a mount board. The interposer includes: a substrate of an insulative resin; an island on one surface of the substrate to be bonded to a rear surface of the chip; a thermal pad on the other surface opposite the one surface opposed to the island with the intervention of the substrate; and a thermal via extending through the substrate from the one surface to the other surface to thermally connect the island to the thermal pad. | 06-30-2011 |
| 20110148911 | IMAGE PROCESSING CIRCUIT - The image processing circuit | 06-23-2011 |
| 20110147890 | MIM CAPACITOR STRUCTURE HAVING PENETRATING VIAS - The semiconductor device according to the present invention includes a plurality of capacitance elements. Each capacitance element has a structure obtained by holding a capacitance film made of an insulating material between first and second electrodes made of a metallic material. The first and second electrodes are so arranged as to partially overlap each other while relatively positionally deviating from each other in a direction orthogonal to the opposed direction thereof. The plurality of capacitance elements are stacked in the opposed direction. | 06-23-2011 |
| 20110147829 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME - Provided are a semiconductor device which can shorten reverse recovery time without increasing leakage current between the drain and the source, and a fabrication method for such semiconductor device. | 06-23-2011 |
| 20110141098 | LIQUID CRYSTAL DRIVING APPARATUS - A voltage amplifier circuit ( | 06-16-2011 |
| 20110140256 | SEMICONDUCTOR DEVICE, SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - The semiconductor device can prevent damages on a semiconductor chip even when a soldering material is used for bonding the back surface of the semiconductor chip to the junction plane of a chip junction portion such as an island or a die pad. This semiconductor device includes a semiconductor chip and a chip junction portion having a junction plane that is bonded to the back surface of the semiconductor chip with a soldering material. The junction plane is smaller in size than the back surface of the semiconductor chip. This semiconductor device may further include a plurality of extending portions which extend respectively from the periphery of the junction plane to directions parallel with the junction plane. | 06-16-2011 |
| 20110139412 | MOTOR DRIVE DEVICE - In the motor drive apparatus, a Hall element outputs a first sinusoidal signal and a second sinusoidal signal, of mutually opposite phases, in accordance with rotor position. A hysteresis comparator compares the first sinusoidal signal and the second sinusoidal signal outputted from the Hall element, and outputs a rectangular wave signal. A pulse width modulation signal generation circuit detects timing at which phase switches, based on the first sinusoidal signal and the second sinusoidal signal outputted from the Hall element, and outputs a pulse width modulation signal in which duty ratio gradually changes, in a predetermined time-period in which the phase switches. A drive circuit combines the rectangular wave signal and the pulse width modulation signal by a logical operation, and drives the fan motor. | 06-16-2011 |
| 20110133711 | SEMICONDUCTOR DEVICE AND SWITCHING REGULATOR USING THE DEVICE - The semiconductor device according to the present invention has an n-channel output transistor wherein an input voltage is impressed on a drain, and a pulsed switching voltage that corresponds to a switching drive of the transistor is brought out from a source; a bootstrap circuit for generating a boost voltage enhanced by a predetermined electric potential above the switching voltage; an internal circuit for receiving a supply of the boost voltage to generate a switching drive signal, and supplying the signal to a gate of the output transistor; an overvoltage protection circuit for monitoring an electric potential difference between the switching voltage and the boost voltage, and generating an overvoltage detection signal; and a switching element for establishing/blocking electrical conduction between the internal circuit and the end impressed with the boost voltage, in accordance with the overvoltage detection signal. | 06-09-2011 |
| 20110133208 | SEMICONDUCTOR ELEMENT - Light extraction efficiency of a semiconductor light-emitting element is improved. A buffer layer, an n-type GaN layer, an InGaN emission layer, and a p-type GaN layer are laminated on a sapphire substrate in a semiconductor light-emitting element. A ZnO layer functioning as a transparent electrode is provided on the p-type GaN layer and concave portions are formed on a surface of the ZnO layer at two-dimensional periodic intervals. If a wavelength of light from the InGaN emission layer in the air is λ, an index of refraction of the ZnO layer at the wavelength λ is n | 06-09-2011 |
| 20110128985 | SEMICONDUCTOR LASER - Provided is a semiconductor laser which has a low operating current and stably oscillates even for high-temperature output. The semiconductor laser is provided with a substrate ( | 06-02-2011 |
| 20110128769 | DATA HOLDING DEVICE - A data holding device comprises a loop structure part (LOOP) that holds data by use of logic gates connected in a loop (e.g., inverters INV | 06-02-2011 |
| 20110128303 | Driving circuit for light emitting diode - A pulse modulator generates a first pulse signal having a duty ratio which is adjusted such that a detection voltage which indicates the electrical state of an LED string to be driven matches a predetermined reference voltage. A first pulse signal is applied to a primary coil of a pulse transformer. A DC/DC converter includes a switching element the ON/OFF operation of which is controlled according to a signal that originates at a secondary coil of the pulse transformer. The DC/DC converter stabilizes an input voltage Vdc, and supplies the input voltage Vdc thus stabilized to the anode of the LED string. | 06-02-2011 |
| 20110128277 | OPERATIONAL AMPLIFIER AND LIQUID CRYSTAL DRIVE DEVICE USING SAME, AS WELL AS PARAMETER SETTING CIRCUIT, SEMICONDUCTOR DEVICE, AND POWER SUPPLY UNIT - The operational amplifier according to the present invention has at least one differential input part for generating a voltage signal corresponding to an electric potential difference between a positive-phase input signal and a negative-phase input signal by using a differential pair configured from a pair of transistors; an output part for generating and outputting an output signal of a logic level corresponding to the voltage signal generated by the differential input part; at least one auxiliary current generator for detecting a sudden change in the positive-phase input signal or the negative-phase input signal and generating an auxiliary current; and a drive current generator for adding together a predetermined reference current and the auxiliary current and generating a drive current of the differential input part. | 06-02-2011 |
| 20110127624 | MEMS SENSOR - An MEMS sensor is described. The MEMS sensor may include a substrate, a lower thin film provided in contact with a surface of the substrate, and an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate. | 06-02-2011 |
| 20110127569 | LED MODULE - An LED module A | 06-02-2011 |
| 20110121337 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a nitride semiconductor light-emitting device capable of preventing shortening of the device lifetime due to increase in the driving voltage of the device and internal heat generation, and also providing uniform laser characteristics, even if the device has a ridge stripe structure. On a GaN substrate | 05-26-2011 |
| 20110117319 | NANOFIBER SHEET AND METHOD FOR MANUFACTURING THE SAME - A nanofiber sheet that has a high degree of transparency, a high modulus of elasticity, a low coefficient of linear thermal expansion as well as high degrees of flatness and smoothness, in particular, a nanofiber sheet produced as a uniform and flat sheet having a high optical transmittance with cellulose as the only component. This sheet has the following characteristics: Calculated for a thickness of 60 μm, the transmittance for parallel rays of light having a wavelength of 600 nm is equal to or higher than 70%; The Young's modulus measured in accordance with the JIS K7161 method is equal to or greater than 10 GPa; The coefficient of linear thermal expansion measured in accordance with the ASTM D606 method is equal to or smaller than 10 ppm/K. | 05-19-2011 |
| 20110115392 | CAPACITOR CHARGING APPARATUS - A capacitor charging apparatus includes a transformer and an output capacitor charged with current flowing through a secondary coil of the transformer, and charges the output capacitor by performing a switching control of a switching transistor provided on a path leading to a primary coil of the transformer. A switching control unit controls on and off of the switching transistor. A voltage detector monitors a voltage at a tap provided in the secondary coil of the transformer. The switching control unit regards the voltage detected by the voltage detector as an output voltage of the capacitor charging apparatus, and controls the on and off of the switching transistor. | 05-19-2011 |
| 20110115089 | Semiconductor device, production method for the same, and substrate - A semiconductor device is provided in which a semiconductor chip is bonded to a substrate with a sufficiently increased bonding strength and cracking is assuredly prevented which may otherwise occur due to heat shock, heat cycle and the like. The semiconductor device includes a semiconductor chip and a substrate having a bonding area to which the semiconductor chip is bonded via a metal layer. The metal layer includes an Au—Sn—Ni alloy layer and a solder layer provided on the Au—Sn—Ni alloy layer. Undulations are formed in an interface between the Au—Sn—Ni alloy layer and the solder layer. | 05-19-2011 |
| 20110114938 | ZnO SEMICONDUCTOR ELEMENT - Provided is a ZnO-based semiconductor device in which, in the case of forming a laminate including an acceptor-doped layer made of a ZnO-based semiconductor, the properties of a film can be stabilized by preventing deterioration of the flatness of the acceptor-doped layer or a layer after the acceptor-doped layer and an increase of crystal defect in the layer, without lowering the concentration of an acceptor element. | 05-19-2011 |
| 20110114937 | p-TYPE MgZnO-BASED THIN FILM AND SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided are: a p-type MgZnO-based thin film that functions as a p-type; and a semiconductor light emitting device that includes the p-type MgZnO-based thin film. | 05-19-2011 |
| 20110114825 | Ambient Light Sensor - In an ambient light sensor according to the present invention, a current amplification portion which amplifies a light current obtained by a light receiving portion to generate an output signal includes: a current amplification stage that has: a first current mirror amplifier which is composed of a bipolar transistor, and a second current mirror amplifier which is composed of a field effect transistor connected in parallel with the first current mirror amplifier; and a changeover control circuit which monitors an amplified current input into the current amplification stage, and performs changeover control of the first and second current mirror amplifiers according to a value of the amplified current. | 05-19-2011 |
| 20110112719 | VEHICLE TRAVELING INFORMATION RECORDING DEVICE - The vehicle traveling information recording device of the present invention comprises a camera unit for acquiring image information relating to outside of a vehicle; a recording unit for recording the image information from the camera unit; an abnormality detection unit for detecting an abnormal vehicle state; an auxiliary data detection unit for acquiring auxiliary data when the abnormality detection unit has detected an abnormality; and a control unit for combining the auxiliary data with the image information in the recording unit when the abnormality detection unit has detected the abnormality, and recording image information after the combination related to abnormality detection. | 05-12-2011 |
| 20110108933 | MEMS DEVICE - A MEMS device according to the present invention includes a movable member, a supporting member supporting the movable member, an opposing member opposed to the movable member, and a wall member formed to an annular shape surrounding the movable member and connected to the supporting member and the opposing member. | 05-12-2011 |
| 20110107836 | ANGULAR VELOCITY SIGNAL DETECTION CIRCUIT AND ANGULAR VELOCITY SIGNAL DETECTION METHOD - An angular velocity signal detection circuit includes: a first current-voltage conversion circuit that converts, into a voltage, a current outputted from a first detection electrode of a gyroscope, and amplifies the voltage, thereby outputs a first conversion signal; a second current-voltage conversion circuit that converts, into a voltage, a current outputted from a second detection electrode of the gyroscope, and amplifies the voltage, thereby outputs a second conversion signal; an arithmetic operation unit that performs arithmetic operations by using the first conversion signal and the second conversion signal, and outputs a first processing signal and a second processing signal; and a third difference arithmetic operation circuit that amplifies a difference between the first processing signal and the second processing signal. | 05-12-2011 |
| 20110104845 | PRODUCTION METHOD OF MEMS SENSOR - Production method for a MEMS sensor including a substrate, a lower thin film, opposed to a surface of the substrate at an interval, having a plurality of lower through-holes formed to pass through the lower thin film in the thickness direction thereof, an upper thin film, opposed to the lower thin film at an interval on the side opposite to the substrate, having a plurality of upper through-holes formed to pass through the upper thin film in the thickness direction thereof, and a plurality of protrusions irregularly provided on a region of the surface of the substrate opposed to the lower thin film. | 05-05-2011 |
| 20110102026 | ANTENNA DRIVING DEVICE - The antenna driving device of the present invention is composed of a trapezoidal-wave signal generating circuit for generating a trapezoidal-wave signal from a reculangular-wave signal having a predetermined frequency; and a trapezoidal-wave signal amplifying circuit for amplifying the trapezoidal-wave signal and feeding the amplified signal to an antenna load. | 05-05-2011 |
| 20110096805 | NITRIDE SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate. The group III nitride semiconductor multilayer structure has a laser resonator including an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer. The laser resonator is arranged to be offset from the center with respect to a device width direction orthogonal to a resonator direction toward one side edge of the device. A wire bonding region having a width of not less than twice the diameter of an electrode wire to be bonded to the device is formed between the laser resonator and the other side edge of the device. | 04-28-2011 |
| 20110096509 | HIGH EFFICIENCY MODULE | 04-28-2011 |
| 20110096106 | TIMING CONTROL CIRCUIT - A timing controller is connected via a common bus to multiple data drivers which drive a display panel. A reception interface circuit receives image data including each color (R, G, and B). A timing control unit controls the timing of the luminance data for each color, i.e., R, G, and B, such that it conforms to the multiple data drivers provided as the transmission destinations. A transmission interface circuit transmits the luminance data for each color, the timing of which is controlled by the timing control unit, and a synchronization clock, to the multiple data drivers via the common bus. The transmission interface circuit is configured so as to independently adjust the respective phases of the synchronization clock and the luminance data for each color to be output to the bus. | 04-28-2011 |
| 20110095876 | MOBILE DEVICE - Provided is a mobile device including: an audio output unit; an audio source unit which provides music information to the audio output unit; an adjustment unit which adjusts the audio volume of the audio output unit; an announcement information generation unit which provides announcement information to the audio output unit; and a control unit which forcibly selects a predetermined audio volume regardless of the adjustment made by the adjustment unit when announcing information by the announcement information generation unit from the audio output unit. | 04-28-2011 |
| 20110090775 | MOTOR DRIVING CIRCUIT - An SPM driver drives a spindle motor. A VCM driver drives a VCM. A DC/DC converter (switching regulator) receives a power supply voltage from an external circuit, and generates a stabilized voltage. Linear regulators each receive a power supply voltage from an external circuit, and each generates a stabilized voltage. A shock detection circuit detects vibration of a device mounting the driving circuit. A power monitoring circuit monitors the power supply voltage, and generates a power-on reset signal which is switched to a predetermined level whenever the power supply voltage is cut off. An ADC converts the back electromotive voltage that occurs at the VCM into a digital signal. A serial interface receives data from an external host processor, which is used to control the driving circuit. Cutoff circuits are arranged between the capacitors, which are to be charged using the induced current that occurs at the SPM, and the power supply terminal. When the power supply voltage is cut off, each cutoff circuit disconnects the corresponding capacitor from the power supply terminal. | 04-21-2011 |
| 20110089878 | MOTOR DRIVE DEVICE WITH LOCK PROTECTION FUNCTION - A cooling system is provided with a motor drive device, a fan motor, and a Hall element. The motor drive device includes a lock protection circuit and a lock controller. When a control signal instructing rotation of the fan motor that is to be driven instructs stoppage of the motor for a predetermined time-period or longer, the lock controller has the lock protection circuit inactive. At an occasion when the control signal has continued to instruct stoppage of the fan motor for a first time-period or longer, a standby controller starts time measurement, and after a further predetermined second time-period has elapsed, makes at least a part of the motor drive device transition to a standby mode. | 04-21-2011 |
| 20110089565 | Semiconductor Device and Electronic Apparatus Equipped with the Semiconductor Device - A semiconductor device comprises an IC chip body and a package substrate that has thereon many external electrodes arranged in a two-dimensional grid configuration. Groups of signal lines that are likely to emit noise (noisy signal lines) are separated and spaced apart from groups of signal lines that are susceptible to noise (noise susceptible signal lines). Each of the noisy signal lines and noise susceptible signal lines is connected to an associated member of an associated IC pad group separated and spaced apart from other IC pad groups. Further, each of the noisy signal lines and noise susceptible signal lines is connected to an associated member of an associated external electrode group selected from the multiplicity of external electrodes arranged in a two-dimensional grid configuration on the package substrate. Thus, groups of potentially interfering signal lines are mutually separated and spaced apart from one another, thereby suppressing the noise. | 04-21-2011 |
| 20110089503 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE - To provide a semiconductor device prevented from giving a limitation on the sensitivity of HEMS devices due to isolation regions thereof and a method of fabricating the same. The semiconductor device includes: a semiconductor substrate with a recess portion formed in an upper surface; a supporting body provided around the recess portion on the semiconductor substrate; a beam-type movable portion which includes a movable electrode provided above the recess portion and is fixed to the supporting body at a position away from the movable electrode; a beam-type fixed electrode provided above the recess portion to be opposed to the movable electrode and fixed to the supporting body; and isolation regions each including a separation column made of a semiconductor and a separation insulating film provided on a side surface of the separation column, the isolation regions being provided between the movable electrode and the supporting body and between the fixed electrode and the supporting body to electrically separate the movable and fixed electrodes from the supporting body. | 04-21-2011 |
| 20110085579 | NITRIDE SEMICONDUCTOR LASER DEVICE - A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate containing no Al. The group III nitride semiconductor multilayer structure forms a structure including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer. The n-type semiconductor layer includes an n-type cladding layer containing Al and an n-type guide layer having a smaller band gap than the n-type cladding layer. The p-type semiconductor layer includes a p-type cladding layer containing Al and a p-type guide layer having a smaller band gap than the p-type cladding layer. A removal region is formed by partially removing the layers containing Al in the group III nitride semiconductor multilayer structure from the substrate. | 04-14-2011 |
| 20110085335 | LED LAMP - An LED lamp A | 04-14-2011 |
| 20110080989 | START-UP CIRCUIT AND START-UP METHOD - A start-up circuit receives a start-up signal instructing start-up of an equipment mounted with the circuit, and executes a predetermined sequence when start-up is instructed by the start-up signal. An oscillator generates a clock signal. A sequence circuit receives the start-up signal and a clock signal output from the oscillator, measures time by counting the clock signal when the start-up signal transits to a predetermined level, and executes a predetermined event at a predetermined timing. The oscillator operates for a period where the start-up signal is at the predetermined level if the start-up signal is at the predetermined level during the period the power key of the equipment mounted with the circuit is being pushed. | 04-07-2011 |
| 20110079792 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE - Provided are a semiconductor device and a method of fabricating the semiconductor device, the semiconductor device including: a source trace, a drain trace, and a gate trace placed on a substrate; a transistor which is placed on the drain trace and includes a source pad and a gate pad; insulating films placed between the drain and source traces and between the drain and gate traces on the substrate so as to cover sidewall surfaces of the transistor; a source spray electrode which is placed on the insulating film between the source and drain traces and connects the source pad of the transistor and the source trace; and a gate spray electrode placed on the insulating film between the gate and drain traces and connects the gate pad of the transistor and the gate trace. | 04-07-2011 |
| 20110074614 | BOOST CIRCUIT - A boost circuit is provided, which is configured to receive a bitstream signal, to boost the amplitude of the bitstream signal thus received, and to output the bitstream signal thus boosted. A first clock booster receives a clock signal, and boosts the amplitude of the clock signal. A second clock booster receives an inverted clock signal, and boosts the amplitude of the inverted clock signal. A switch receives the output signals of these two clock boosters, and selects the one output signal that is high level. A first capacitor is coupled to the output terminal of the switch. A level shifter level-shifts the high level of the bitstream signal to the voltage level that occurs at the first capacitor. | 03-31-2011 |
| 20110074017 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND MULTILAYER WAFER STRUCTURE - Grooves are formed on the front surfaces of first and second semiconductor wafers each including an aggregate of a plurality of semiconductor chips. The grooves each extend on a dicing line set between the semiconductor chips and to have a larger width than the dicing line. Thereafter the first and second semiconductor wafers are arranged so that the front surfaces thereof are opposed to each other, and the space between the first semiconductor wafer and the second semiconductor wafer is sealed with underfill. Thereafter the rear surfaces of the first and second semiconductor wafers are polished until at least the grooves are exposed, and a structure including the first and second semiconductor wafers and the underfill is cut on the dicing line. | 03-31-2011 |
