RiteDia Corporation Patent applications |
Patent application number | Title | Published |
20140134411 | LIGHT TRANSMITTIVE AlN PROTECTIVE LAYERS AND ASSOCIATED DEVICES AND METHODS - Devices having light transmittant protective layers and methods associated with such layers are provided. In one aspect, for example, a device having a light transmittant protective layer can include a substrate having a transmittance of greater than or equal to about 85 for light having at least one wavelength from about 250 nm to about 800 nm, and a light transmittant protective layer coated on the substrate. The protective layer includes at least 50 wt % AlN and having a transmittance of greater than or equal to 80% for light having at least one wavelength from about 250 nm to about 800 nm. | 05-15-2014 |
20140131757 | HEAT CONDUCTING COMPOSITE MATERIAL AND LIGHT-EMITTING DIODE HAVING THE SAME - A heat conducting composite material includes a matrix and a graphene sheet. The graphene sheet has a two-dimensional planar structure, and a basal plane of the graphene sheet has a lateral size between 0.1 nm and 100 nm such that the graphene sheet has a quantum well structure. When radiation energy passes through the heat conducting composite material, the radiation energy is converted into infrared light by the quantum well structure of the graphene sheet to achieve high radiating efficiency. A light-emitting diode (LED) having the heat conducting composite material and capable of achieving a heat dissipation effect is further disclosed. | 05-15-2014 |
20140106153 | GRAPHENE PLATELET FABRICATION METHOD AND GRAPHENE PLATELET FABRICATED THEREBY - The present invention discloses a graphene platelet fabrication method, which comprises Step (A): providing a highly-graphitized graphene having a graphitization degree of 0.8-1.0; and Step (B): providing a shear force acting on the highly-graphitized graphene to separate the highly-graphitized graphene into graphene platelets, wherein the graphene platelets have a length of 10-500 μm and a width of 10-500 μm and have a single-layer or multi-layer structure. The present invention also discloses a graphene platelet fabricated according to the abovementioned method. | 04-17-2014 |
20130341204 | Carbon Electrode Devices for Use with Liquids and Associated Methods - Electrode devices and systems for use in liquid environments, including associated methods are provided. In one aspect, for example, an electrode device for use in a liquid environment can include a proton exchange membrane having a first side and a second side, a first electrode including a carbon material, where the first electrode is positioned at the first side of the proton exchange membrane, and a second electrode including a carbon material, where the second electrode positioned at the second side of the proton exchange membrane opposite the first electrode. The proton exchange membrane spaces the first electrode and the second electrode at a distance of less than or equal to about 100 microns apart. | 12-26-2013 |
20130216823 | THERMAL CONDUCTION DEVICE AND METHOD FOR FABRICATING THE SAME - A thermal conduction device and a method for fabricating the same are disclosed. Firstly, arrange a plurality of diamond particles on a plane according to a. predetermined pattern to form a diamond particle monolayer. Next, apply a forming process on a metal material such that the metal material forms a metal matrix wrapping the diamond particles to form a composite body including the diamond particle monolayer embedded in the metal matrix. Next, stack a plurality of the composite bodies and perform a heating process to join the metal matrixes to each other to form the thermal. conduction device. The device is characterized in arranging diamond particles on a plane to form a two-dimensional monolayer structure and manufactured via assembling the two-dimensional monolayer structures to form a three-dimensional multilayer structure. By controlling the arrangement of the diamond particles, the thermal conduction device can have superior thermal conduction performance. | 08-22-2013 |
20120280253 | Stress Regulated Semiconductor Devices and Associated Methods - Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm/° C. | 11-08-2012 |