Renesas Technology Corp. Patent applications |
Patent application number | Title | Published |
20120262992 | SEMICONDUCTOR DEVICE INCLUDING MULTI-CHIP - In order to implement a memory having a large storage capacity and a reduced data retention current, a non-volatile memory, an SRAM, a DRAM, and a control circuit are modularized into one package. The control circuit conducts assignment of addresses to the SRAM and DRAM, and stores data that must be retained over a long period of time in the SRAM. In the DRAM, a plurality of banks are divided into two sets, and mapped to the same address space, and sets are refreshed alternately. A plurality of chips of them are stacked and disposed, and wired by using the BGA and chip-to-chip bonding. | 10-18-2012 |
20120012936 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device including a semiconductor substrate having a logic formation region where a logic device is formed; a first impurity region formed in an upper surface of the semiconductor substrate in the logic formation region; a second impurity region formed in an upper surface of the semiconductor substrate in the logic formation region; a third impurity region formed in an upper surface of the first impurity region and having a conductivity type different from that of the second impurity region; a fourth region formed in an upper surface of the second impurity region and having a conductivity type different from that of the second impurity region; a first silicide film formed in an upper surface of the third impurity region; a second silicide film formed in an upper surface of the fourth impurity region and having a larger thickness than the first silicide film. | 01-19-2012 |
20110275185 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH OFFSET SIDEWALL STRUCTURE - A method of manufacturing a semiconductor device with NMOS and PMOS transistors is provided. The semiconductor device can lessen a short channel effect, can reduce gate-drain current leakage, and can reduce parasitic capacitance due to gate overlaps, thereby inhibiting a reduction in the operating speed of circuits. An N-type impurity such as arsenic is ion implanted to a relatively low concentration in the surface of a silicon substrate ( | 11-10-2011 |
20110207312 | SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE STRESS TO SILICON SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME - A gate insulating film ( | 08-25-2011 |
20110199844 | Semiconductor Memory Device Suitable for Mounting on a Portable Terminal - A semiconductor memory device for operating in synchronization with a clock is disclosed. The semiconductor includes a memory array having a plurality of memory cells arranged in rows and columns; and a control circuit performing a control, operation to effect row access processing on a selected row and to effect column access processing on column(s). The control being performed in synchronization with a first clock defined by a time of production of the read signal or the write signal according to an externally applied control signal. the control is also performed in synchronization with a second or later clock defined by a latency, to effect the column access processing on a second number of the columns remaining in the burst mode access | 08-18-2011 |
20110182361 | IMAGE DECODING METHOD AND IMAGE CODING METHOD - The present invention is directed to improve compression efficiency by variable-length coding in accordance with characteristics of image data to be processed. An apparatus for compressing quantized data by variable-length coding includes: a statistical information storing memory ( | 07-28-2011 |
20110156274 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device capable of suppressing degradation in connection reliability due to the decrease in thickness of a conductive adhesive caused by the movement of a connecting plate in a semiconductor device to which a power transistor is mounted. A step is provided in the thin part of the connecting plate connected to a lead post to lock the connecting plate by contacting the step to the tip of the lead post. Alternatively, a groove is provided in the thin part of the connecting plate to lock the connecting plate by connecting the lead post to only the part of the connecting plate on the tip side from the groove. | 06-30-2011 |
20110133293 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device including a semiconductor substrate having a logic formation region where a logic device is formed; a first impurity region formed in an upper surface of the semiconductor substrate in the logic formation region; a second impurity region formed in an upper surface of the semiconductor substrate in the logic formation region; a third impurity region formed in an upper surface of the first impurity region and having a conductivity type different from that of the second impurity region; a fourth region formed in an upper surface of the second impurity region and having a conductivity type different from that of the second impurity region; a first silicide film formed in an upper surface of the third impurity region; a second silicide film formed in an upper surface of the fourth impurity region and having a larger thickness than the first silicide film. | 06-09-2011 |
20110101530 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - A seal ring is provided between a region where a circuit is formed on a semiconductor substrate and a dicing region. The seal ring has a portion where sealing layers of which the cross sectional form is in T-shape are layered and a portion where sealing layers of which the cross sectional form is rectangular are layered. | 05-05-2011 |
20110092175 | MOBILE COMMUNICATION APPARATUS - A transceiver suitable for larger scale of integration employs direct conversion reception for reducing the number of filters. Also, the number of VCOs is reduced by utilizing dividers to supply a receiver and a transmitter with locally oscillated signals at an RF band. Dividers each having a fixed division ratio are used for generating locally oscillated signals for the receiver, while a divider having a switchable division ratio are used for generating the locally oscillated signal for the transmitter. In addition, a variable gain amplifier for baseband signal is provided with a DC offset voltage detector and a DC offset canceling circuit for supporting high speed data communications to accomplish fast cancellation of a DC offset by eliminating intervention of a filter within a feedback loop for offset cancellation. | 04-21-2011 |
20110090605 | SEMICONDUCTOR INTEGRATED CIRCUIT - An integrated circuit formed on a semiconductor chip includes voltage regulators for stepping down an externally-supplied power voltage to produce an internal power voltage, and internal circuits which operate based on the internal power voltage. The voltage regulators are laid in the area of the buffers and protective elements for the input/output signals and power voltages so that the overhead area due to the on-chip provision of the voltage regulators is minimized. The internal power voltage is distributed to the internal circuits through a looped main power line, with an electrode pad for connecting an external capacitor for stabilizing the internal power voltage being provided on it, so that the internal power voltage is stabilized and the power consumption of the integrated circuit is minimized. | 04-21-2011 |
20110085583 | RECEPTION APPARATUS USING SPREAD SPECTRUM COMMUNICATION SCHEME - In a reception apparatus, a matched filter that has conventionally been arranged in a searcher unit is mounted on an acquisition unit together with a large scale memory. The large scale memory once stores reception chip signals, and thereafter outputs them to the matched filter and to the delay profile calculation unit. A setting register receives an acquisition signal and outputs it to the matched filter. The matched filter performs acquisition of the reception chip signals outputted from the large scale memory, and outputs a despread timing signal to a despread circuit, a code generation circuit and the delay profile calculation unit. | 04-14-2011 |
20110055615 | METHOD OF AND DEVICE FOR DETECTING CABLE CONNECTION - The detector includes a plug for connecting a personal computer through a cable, a battery power supply which provides a constant power supply, and an MCU which receives a specific potential from the personal computer when the latter is connected. | 03-03-2011 |
20110029829 | SEMICONDUCTOR DEVICE - An object of the present invention is to provide a semiconductor device capable of recognizing circuit malfunction in an actual operation and of specifying a point of the circuit malfunction, and the semiconductor device, which does not induce the malfunction in the circuit of a subsequent stage when restoring the malfunction. The present invention is the semiconductor device provided with a plurality of logic circuits and a plurality of judging circuits for judging malfunction based on data from the logic circuits, wherein each of the judging circuits is provided with a first register, delay unit, a second register, a comparator and scanning unit, which makes the second register a shift register to allow to transmit an error signal held in the second register to the subsequent stage, while allowing the comparator to hold a comparison result. | 02-03-2011 |
20110022759 | MULTIPROCESSOR SYSTEM - The present invention provides a technique capable of processing a plurality of interrupt causes sharing one interrupt request in different processors. An interrupt controller outputs an interrupt request when the interrupt request shared by a plurality of interrupt causes is notified. The interrupt request output by the interrupt controller is accepted by one of the processors. The processor accepting the interrupt request determines whether the interrupt cause that the processor must process has occurred, executes an interrupt processing when such interrupt cause has occurred, and notifies the generation of the interrupt request to another processor that processes another interrupt cause of the plurality of interrupt causes sharing the interrupt request when the relevant interrupt cause has not occurred. | 01-27-2011 |
20110012180 | METHOD OF FORMING A CMOS STRUCTURE HAVING GATE INSULATION FILMS OF DIFFERENT THICKNESSES - The semiconductor integrated circuit device employs on the same silicon substrate a plurality of kinds of MOS transistors with different magnitudes of tunnel current flowing either between the source and gate or between the drain and gate thereof. These MOS transistors include tunnel-current increased MOS transistors at least one of which is for use in constituting a main circuit of the device. The plurality of kinds of MOS transistors also include tunnel-current reduced or depleted MOS transistors at least one of which is for use with a control circuit. This control circuit is inserted between the main circuit and at least one of the two power supply units. | 01-20-2011 |
20110002170 | SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY BLOCK CONFIGURATION - A memory array including memory mats is arranged in a U shape when seen in two dimensions, and a logic circuit and an analog circuit are arranged in a region unoccupied by the memory array. This facilitates transmission of power supply voltage and signals between the peripheral circuit including the analog and logic circuits and the pad band including power supply and data pads. The analog circuit is positioned close to the power supply pad, so that voltage drop due to the resistance of power supply interconnection is restricted. It is also possible to separate a charge pumping power supply interconnection and a peripheral circuit power supply interconnection in the vicinity of the power supply pad. | 01-06-2011 |
20110001177 | SEMICONDUCTOR DEVICE COMPRISING CAPACITOR AND METHOD OF FABRICATING THE SAME - A semiconductor device, having a memory cell region and a peripheral circuit region, includes an insulating film, having an upper surface, formed on a major surface of a semiconductor substrate to extend from the memory cell region to the peripheral circuit region. A capacitor lower electrode assembly is formed in the memory cell region to upwardly extend to substantially the same height as the upper surface of the insulating film on the major surface of the semiconductor substrate. Additionally, the lower electrode assembly includes first and second lower electrodes that are adjacent through the insulating film. A capacitor upper electrode is formed on the capacitor lower electrode through a dielectric film, to extend onto the upper surface of the insulating film. The capacitor lower electrode includes a capacitor lower electrode part having a top surface and a bottom surface. A semiconductor device organized as just described, permits implementation having a high density of integration while ensuring the capacitor exhibits high reliability and a constant capacitance. | 01-06-2011 |
20100325386 | PARALLEL OPERATION DEVICE ALLOWING EFFICIENT PARALLEL OPERATIONAL PROCESSING - In arithmetic/logic units (ALU) provided corresponding to entries, an MIMD instruction decoder generating a group of control signals in accordance with a Multiple Instruction-Multiple Data (MIMD) instruction and an MIMD register storing data designating the MIMD instruction are provided, and an inter-ALU communication circuit is provided. The amount and direction of movement of the inter-ALU communication circuit are set by data bits stored in a movement data register. It is possible to execute data movement and arithmetic/logic operation with the amount of movement and operation instruction set individually for each ALU unit. Therefore, in a Single Instruction-Multiple Data type processing device, Multiple Instruction-Multiple Data operation can be executed at high speed in a flexible manner. | 12-23-2010 |
20100323491 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Any of a plurality of contact plugs which reaches a diffusion layer serving as a drain layer of an MOS transistor has an end provided in contact with a lower surface of a thin insulating film provided selectively on an interlayer insulating film. A phase change film constituted by GST to be a chalcogenide compound based phase change material is provided on the thin insulating film, and an upper electrode is provided thereon. Any of the plurality of contact plugs which reaches the diffusion layer serving as a source layer has an end connected directly to an end of a contact plug penetrating an interlayer insulating film. | 12-23-2010 |
20100314686 | SEMICONDUCTOR DEVICE - A gate electrode is provided such that both ends thereof in a gate width direction are projected from an active region in plane view. Partial trench isolation insulation films are provided in a surface of an SOI substrate corresponding to lower parts of the both ends, and body contact regions are provided in the surface of the SOI substrate outside the both ends of the gate electrode in the gate width direction so as to be adjacent to the respective partial trench isolation insulation films. The body contact region and a body region are electrically connected through an SOI layer (well region) under the partial trench isolation insulation film. In addition, a source tie region in which P type impurity is doped in a relatively high concentration is provided in the surface of a source region in the vicinity of the center of the gate electrode in the gate width direction. | 12-16-2010 |
20100314676 | SEMICONDUCTOR DEVICE HAVING PLURAL DRAM MEMORY CELLS AND A LOGIC CIRCUIT AND METHOD FOR MANUFACTURING THE SAME - A memory cell capacitor (C | 12-16-2010 |
20100309641 | INTERPOSER SUBSTRATE, LSI CHIP AND INFORMATION TERMINAL DEVICE USING THE INTERPOSER SUBSTRATE, MANUFACTURING METHOD OF INTERPOSER SUBSTRATE, AND MANUFACTURING METHOD OF LSI CHIP - A method of forming narrow-pitch flip-chip bonding electrodes and wire bonding electrodes at the same time is provided so as to reduce the cost of a substrate. In addition, a low-cost solder supply method and a flip-chip bonding method to a thin Au layer are provided. A stacked layer of a Cu layer | 12-09-2010 |
20100308858 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SIGNAL PROCESSING APPARATUS - A memory cell mat is divided into a plurality of entries, and an arithmetic logic unit is arranged corresponding to each entry. Between the entries and the corresponding arithmetic logic units, arithmetic/logic operation is executed in bit-serial and entry-parallel manner. Where parallel operation is not very effective, data is transferred in entry-serial and bit-parallel manner to a group of processors provided at a lower portion of the memory mat. In this manner, a large amount of data can be processed at high speed regardless of the contents of operation or data bit width. | 12-09-2010 |
20100308417 | SEMICONDUCTOR MEMORY DEVICE - In a full CMOS SRAM having a lateral type cell (memory cell having three partitioned wells arranged side by side in a word line extending direction and longer in the word line direction than in the bit line direction) including first and second driver MOS transistors, first and second load MOS transistors and first and second access MOS transistors, two capacitors are arranged spaced apart from each other on embedded interconnections to be storage nodes, with lower and upper cell plates cross-coupled to each other. | 12-09-2010 |
20100301947 | RF POWER AMPLIFIER - The RF power amplifier includes first and second amplifiers Q | 12-02-2010 |
20100301935 | BIAS CIRCUIT, HIGH-POWER AMPLIFIER, AND PORTABLE INFORMATION TERMINAL - To provide a bias circuit for gain control that can reduce gain variation at low-power output, facilitate setting of output power, and is unlikely to be affected by variation in element values and variations among products. Use in an HPA having three bias circuits serially-connected is assumed. Current of the third bias circuit is varied with a square-law characteristic. The square-law characteristic is amplified by a buffer amplifier including a linear amplifier and a peripheral circuit thereof. Output current of the third bias circuit varies depending on a current drivability coefficient of the diode-connected FET branched from the connection point between a constant current source and the linear amplifier. The output current of the third bias circuit is controlled by providing a circuit that draws a certain amount of current from the current flowing in the FET. | 12-02-2010 |
20100301902 | DECODER CIRCUIT - A normally operable decoder circuit is obtained without entailing a delay in decoding operation, an increase in circuit area, and an increase in circuit design cost. An NMOS transistor in a high-voltage circuit portion is inserted between the output of a NAND gate and a node, and receives an input signal at the gate electrode thereof. A load current generating portion in the high-voltage circuit portion includes PMOS transistors coupled in series between a high power supply voltage and the node. One of the PMOS transistor receives a control signal at the gate electrode thereof. The other PMOS transistor receives a control signal at the gate electrode thereof. An inverter receives a signal obtained from the node as an input signal, and outputs the inverted signal thereof as an output signal. | 12-02-2010 |
20100297956 | RECEIVER, TRANSCEIVER, AND MOBILE TERMINAL DEVICE - The invention provides a control method for generating variable operating currents in relation to input signal power and output signal power and achieving both low noise and low power consumption. Emitter follower circuits are attached to output terminals of a frequency divider for generating a local signal. By adjusting the currents flowing through the emitter follower circuits, the amount of currents flowing into mixers is adjusted. When the amount of currents of local signals flowing into the mixers increases, the effect of noise suppression is expected. The amount of the currents flowing through the emitter follower circuits is changed depending on the amplification factor of variable amplifiers. | 11-25-2010 |
20100295461 | DRIVING CIRCUIT FOR AND SEMICONDUCTOR DEVICE FOR DRIVING LASER DIODE - A driving circuit supplies a suppression current (I | 11-25-2010 |
20100291767 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - In MOSFET having SBD as a protection element, a TiW (alloy having tungsten as a main component) film is used as an aluminum-diffusion barrier metal film below an aluminum source electrode in order to secure properties of SBD. The present inventors have found that a tungsten-based barrier metal film is in the form of columnar grains having a lower barrier property than that of a titanium-based barrier metal film such as TiN so that aluminum spikes are generated relatively easily in a silicon substrate. In the present invention, when a tungsten-based barrier metal film is formed by sputtering as a barrier metal layer between an aluminum-based metal layer and a silicon-based semiconductor layer therebelow, the lower layer is formed by ionization sputtering while applying a bias to the wafer side and the upper layer is formed by sputtering without applying a bias to the wafer side. | 11-18-2010 |
20100285770 | WIRELESS COMMUNICATION SYSTEM - A wireless communication system includes: a filter; and a semiconductor chip including a signal processing integrated circuit having an amplifier, wherein a main surface of the semiconductor chip is provided with a plurality of electrode terminals along an edge portion thereof; wherein the amplifier has a transistor including a control electrode, a first electrode through which a signal is outputted, and a second electrode to which a voltage is applied; wherein the control electrode, the first electrode and the second electrode of the transistor are connected to the electrode terminals, respectively; and wherein none of wirings are arranged between the electrode terminals and placements of the control electrode, the first electrode and the second electrode, making space between the electrodes and the electrode terminals narrow. | 11-11-2010 |
20100285651 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - To manufacture in high productivity a semiconductor device capable of securely achieving element isolation by a trench-type element isolation and capable of effectively preventing potentials of adjacent elements from affecting other nodes, a method of manufacturing the semiconductor device includes: a step of forming a first layer on a substrate; a step of forming a trench by etching the first layer and the substrate; a step of thermally oxidizing an inner wall of the trench; a step of depositing a first conductive film having a film thickness equal to or larger than one half of the trench width of the trench on the substrate including the trench; a step of removing a first conductive film from the first layer by a CMP method and keeping the first conductive film left in only the trench; a step of anisotropically etching the first conductive film within the trench to adjust the height of the conductive film to become lower than the height of the surface of the substrate; a step of depositing an insulating film on the first conductive film by the CVD method to embed the upper part of the first conductive film within the trench; a step of flattening the insulating film by the CMP method; and a step of removing the first layer. | 11-11-2010 |
20100277192 | MANUFACTORING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A probe is contacted to a test pad, without destroying the circuit formed in the chip at the time of a probe test. Therefore, a load jig, a pressing tool, an elastomer, an adhesion ring, and a plunger are made into one by fixation with a nut and a bolt. The elastic force of the spring installed between the spring retaining jig and the load jig acts so that the member used as these one may be depressed toward pad PD. The thrust transmitted from the spring in a plunger to a thin films sheet is used only for the extension of a thin films sheet. | 11-04-2010 |
20100277143 | POWER SUPPLY UNIT - To provide a power supply unit capable of realizing a multiphase power supply at low cost. For example, each of a plurality of semiconductor devices DEV[1]-DEV[n] comprises a trigger input terminal TRG_IN, a trigger output terminal TRG_OUT, and a timer circuit TM that delays a pulse signal input from TRG_IN and outputs it to TRG_OUT. DEV[1]-DEV[n] are mutually coupled in a ring shape by its own TRG_IN being coupled to TRG_OUT of one semiconductor device other than itself. Each of DEV[1]-DEV[n] performs switching operation by using the pulse signal from TRG_IN as a starting point, and feeds a current into an inductor L corresponding to itself. Moreover, DEV[1] generates the above-described pulse signal only once during startup by a start trigger terminal ST being set to a ground voltage GND, for example. | 11-04-2010 |
20100273386 | LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR FABRICATING THE SAME, AND PORTABLE TELEPHONE USING THE SAME - A liquid crystal display device comprises a liquid crystal display panel and a semiconductor integrated circuit for driving and controlling the liquid crystal display panel. The number of input/output wires connected to I/O terminals (bonding pads) of the semiconductor integrated circuit is reduced so as to simplify wiring patterns of the I/O wires, whereby degrees of freedom in arranging the I/O wiring patterns are enhanced. The panel has a pair of insulating substrate, and the semiconductor integrated circuit is mounted on one of the paired substrates. The semiconductor integrated circuit has a mode terminal which is fixed to a power supply potential or to a reference potential during operation of the integrated circuit, and power supply dummy terminals connected to the power supply potential or reference potential inside the semiconductor integrated circuit. The wiring patterns formed on the paired insulating substrates connect the mode terminal to the power supply dummy terminals. | 10-28-2010 |
20100270634 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention makes it possible to obtain: a semiconductor device capable of forming a highly reliable upper wire without a harmful influence on the properties of the magnetic material for an MTJ device; and the manufacturing method thereof. Plasma treatment is applied with reducible NH | 10-28-2010 |
20100270633 | NONVOLATILE MEMORY DEVICE - Ferromagnetic layers have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers is substantially zero. That is, the ferromagnetic layers are exchange-coupled with a nonmagnetic layer interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers forming the SAF structure is substantially zero, the magnetization of a recording layer is determined by the magnetization of a ferromagnetic layer. Therefore, the ferromagnetic layer is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers are made of a CoFe alloy having a high exchange-coupling force. | 10-28-2010 |
20100270365 | SOLDER PASTE COMPOSITION HAVING SOLDER POWDER, FLUX AND METALLIC POWDER - The present invention relates to a solder paste composition used for precoating an electrode surface with solder. A first solder paste composition is contains a solder powder and a flux, and a metallic powder made by metallic species different from metallic species constituting the solder powder and metallic species constituting the electrode surface in a rate of 0.1% by weight or more and 20% by weight or less based on a total amount of the solder powder. When these solder paste compositions are evenly applied onto an electronic circuit substrate for precoating, such a solder that does not generate any swollen portion, solder-lacking portion and variability in a height thereof can be formed irrespective of a shape of a pad. | 10-28-2010 |
20100267175 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - In a process for a semiconductor typically represented by a vertical power MOSFET, etc. of repeating various fabrications in a state of a thin film wafer with the thickness of the wafer being 200 μm or less, it is a standard procedure of conducting processing in a stage of bonding a reinforcing glass sheet to a device surface of the wafer (main surface on the side of surface) in the step after film thickness-reduction. However according to the study of the present inventors, it has been found that about 70% for the manufacturing cost is concerned with the reinforcing glass sheet. In the present invention, a stress relief insulation film pattern is formed to the peripheral end of the rear face of a wafer in which processing to the device surface (surface side face) of the wafer has been completed substantially and back grinding has been applied. | 10-21-2010 |
20100265752 | SEMICONDUCTOR STORAGE DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor storage device includes a memory cell array, a plurality of word lines, a plurality of bit lines, a first gate wiring element | 10-21-2010 |
20100264899 | SEMICONDUCTOR DEVICE GENERATING VOLTAGE FOR TEMPERATURE COMPENSATION - An input transistor unit includes a first transistor having a control electrode to which a reference voltage is supplied. An output transistor unit includes a diode-connected second transistor. At least one of the input transistor unit and the output transistor unit further includes a third transistor that is diode-connected and connected in series with the corresponding first transistor or the second transistor and outputs a current in the same direction as the corresponding transistor does. The number of transistors included in the input transistor unit and the number of transistors included in output transistor unit are different from each other. The size of transistors included in the input transistor unit differs from that of transistors included in the output transistor unit. | 10-21-2010 |
20100261334 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region. | 10-14-2010 |
20100258948 | Semiconductor Wafer and Method of Manufacturing the Same and Method of Manufacturing Semiconductor Device - A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes. | 10-14-2010 |
20100258922 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To prevent, in a resin-sealed type semiconductor package, generation of cracks in a die bonding material used for mounting of a semiconductor chip. A semiconductor chip is mounted over the upper surface of a die pad via a die bonding material, followed by sealing with an insulating resin. The top surface of the die pad to be brought into contact with the insulating resin is surface-roughened, while the bottom surface of the die pad and an outer lead portion are not surface-roughened. | 10-14-2010 |
20100252924 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another. | 10-07-2010 |
20100246236 | SEMICONDUCTOR MEMORY DEVICE HAVING LAYOUT AREA REDUCED - A metal supplying an N well voltage is provided in a first metal interconnection layer. The metal is electrically coupled to an active layer provided in an N well region by shared contacts so that the N well voltage is supplied to the N well region. A metal supplying a P well voltage is provided in a third metal interconnection layer. The metal supplying the N well voltage is formed using a metal in the first metal interconnection layer and thus does not require a piling region to the underlayer, and only a piling region to the underlayer of the metal for the P well voltage needs to be secured. Therefore, the length in the Y direction of a power feed cell can be reduced thereby reducing the layout area of the power feed cell. | 09-30-2010 |
20100241771 | PERIPHERAL CIRCUIT WITH HOST LOAD ADJUSTING FUNCTION - A peripheral circuit with a host load adjusting function which is capable of readily carrying out control so that the amounts of data processed by the peripheral circuit and a host CPU are balanced by limiting interrupts made by the peripheral circuit, usage of a memory bus bandwidth, and a processing throughput of data. A typical embodiment of the present invention has an adjustment limitation setting unit setting a minimum value of an interval of interrupt requests generated by the peripheral circuit with the host load adjusting function, and a cycle counter counting generation timing of the interrupt requests, and compares a value of the cycle counter with the interval set in the adjustment limitation setting unit, thereby suppressing the interrupt requests generated at an interval shorter than the set interval. | 09-23-2010 |
20100231304 | SEMICONDUCTOR DEVICE - In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is. | 09-16-2010 |
20100229161 | COMPILE METHOD AND COMPILER - A compile technique is provided for multicore allocation, by which a desired running performance can be achieved. The steps of analyzing a taskization directive, taskizing a specified part, and assigning a specified CPU the task are adopted for the compile technique. According to the program-to-tasks-decomposition compile technique, the multicore decomposition is performed by allocating tasks to CPUs individually while following a task decomposition directive of a main part designated by a user. When no direction is issued concerning a CPU to be allocated, the relation with a principal task is judged from the relation of invocation and the dependency, and CPU to be allocated, and then the CPU to be allocated is determined. In allocation to the CPU, an efficient multicore-task decomposition is achieved in consideration of copy and assignment of one processing to more than one CPU while figuring in the balance between processing speed and resources. | 09-09-2010 |
20100227470 | Manufacturing Method of Semiconductor Integrated Circuit Device - In a formation process of a semi-global interconnect in a Cu damascene multilayer wiring structure, it is the common practice, upon formation of the damascene wiring structure, to remove an etch stop insulating film from a via bottom by dry etching and then carry out nitrogen plasma treatment to reduce carbon deposits on the surface of the via bottom. Study by the present inventors has revealed that when a sequence of successive discharging for the removal of electrostatic charge by using nitrogen plasma and transportation of the wafer is performed, a Cu hollow is generated on the via bottom at the end of the via chain coupled to a pad lead interconnect having a length not less than a threshold value. According to the invention, in a via hole formation step in a damascene semi-global interconnect or the like, dry etching treatment of a via-bottom etch stop film is performed and then, after nitrogen plasma treatment in the same treatment chamber, electrostatic charge removal treatment by using argon plasma is performed. | 09-09-2010 |
20100225401 | SEMICONDUCTOR DEVICE - The present invention provides a technology capable of achieving an improvement in the characteristic of a power amplifier when a power amplifier mounted onto mobile communication equipment such as a cellular phone is comprised of the balance amplifier. One feature of an embodiment resides in that each of passive parts disposed in a low-band signal negative path and each of passive parts disposed in a low-band signal positive path are placed in positions where they are symmetric with respect to a center line of a semiconductor chip. Thus, the symmetry between the low-band signal negative path and the low-band signal positive path is enhanced. As a result, a loss in matching due to the difference between the low-band signal negative path and the low-band signal positive path can be enough reduced, and the characteristic of a low-band signal balance amplifier can be enhanced. | 09-09-2010 |
20100219537 | SEMICONDUCTOR DEVICE - A first semiconductor chip and a second semiconductor chip which form a stack are mounted on a module substrate by deflecting a centre position of the semiconductor chips from the module substrate. In the side where the distance from the edge of the deflected semiconductor chip to the edge of a module substrate is shorter, the electrode pad on the first semiconductor chip and the electrode pad on the second semiconductor chip are directly connected with a wire. In the side where the distance from the edge of the deflected semiconductor chip to the edge of a module substrate is longer, the electrode pad on the first semiconductor chip and the electrode pad on the second semiconductor chip are combined with the corresponding bonding lead on the module substrate with a wire. | 09-02-2010 |
20100217943 | MICROCONTROLLER AND ELECTRONIC CONTROL UNIT - A microcontroller in which respective CPUs execute different applications so as to improve processing performance, and the respective CPUs execute an application that requires safety and mutually compare the results thereof so as to enhance the reliability of write data is provided. The microcontroller has a plurality of processing systems made up of a first CPU, a second CPU, a first memory and a second memory, and for the instruction processing about specific processing set in advance, the write to peripheral modules which are not multiplexed is executed twice, and the write data of the first time and the second time are mutually collated. | 08-26-2010 |
20100216284 | SEMICONDUCTOR MEMORY DEVICE - In a multiport SRAM memory cell of the present invention, an access transistor of a first port is disposed in a p-type well, and an access transistor of a second port is disposed in a p-type well. The gates of all of transistors disposed in a memory cell extend in the same direction. With the configuration, a semiconductor memory device having a low-power consumption type SRAM memory cell with an increased margin of variations in manufacturing, by which a bit line can be shortened in a multiport SRAM memory cell or an associative memory, can be obtained. | 08-26-2010 |
20100214834 | THIN FILM MAGNETIC MEMORY DEVICE INCLUDING MEMORY CELLS HAVING A MAGNETIC TUNNEL JUNCTION - In the data read operation, a memory cell and a dummy memory cell are respectively coupled to two bit lines of a selected bit line pair, a data read current is supplied. In the selected memory cell column, a read gate drives the respective voltages on a read data bus pair, according to the respective voltages on the bit lines. A data read circuit amplifies the voltage difference between the read data buses so as to output read data. The use of the read gate enables the read data buses to be disconnected from a data read current path. As a result, respective voltage changes on the bit lines are rapidly produced, and therefore, the data read speed can be increased. | 08-26-2010 |
20100214833 | SEMICONDUCTOR DEVICE - For example, one memory cell is configured using two memory cell transistors and one phase change element by disposing a plurality of diffusion layers in parallel to a bit-line, disposing gates between the diffusion layers so as to cross the bit-line, disposing bit-line contacts and source contacts alternately to the plurality of diffusion layers arranged in a bit-line direction for each diffusion layer, and providing a phase change element on the source contact. Also, the phase change element can be provided on the bit-line contact instead of the source contact. By this means, for example, increase in drivability of the memory cell transistors and reduction in area can be realized. | 08-26-2010 |
20100213594 | SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME - A semiconductor device having a structure in which the structure is laminated in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of the other semiconductor chip by the adhesive layer of the back surface, a semiconductor device having a structure in which the semiconductor device is laminated in many stages is manufactured. | 08-26-2010 |
20100207275 | HYBRID INTEGRATED CIRCUIT DEVICE, AND METHOD FOR FABRICATING THE SAME, AND ELECTRONIC DEVICE - A hybrid integrated circuit device having high mount reliability comprises a module substrate which is a ceramic wiring substrate, a plurality of electronic component parts laid out on the main surface of the module substrate, a plurality of electrode terminals laid out on the rear surface of the module substrate, and a cap which is fixed to the module substrate to cover the main surface of the module substrate. The electrode terminals include a plurality of electrode terminals which are aligned along the edges of the module substrate and power voltage supply terminals which are located inner than these electrode terminals. The electrode terminals aligned along the substrate edges are coated, at least in their portions close to the substrate edge, with a protection film having a thickness of several tens micrometers or less. Connection reinforcing terminals consist of a plurality of divided terminals which are independent of each other, and are ground terminals. | 08-19-2010 |
20100203456 | METHOD OF FORMING RESIST PATTERN AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The present invention improves the OPE characteristic generated by the difference between sparse and dense mask patterns and promotes fidelity in the design of the pattern. Because of this, the present invention includes a step of forming a resist having an acid dissociative dissolution suppression group on a substrate, a step of coating the resist with an acid polymer dissolved in an alcohol based solvent and forming an upper layer film, a step of exposing through a mask, a step of performing a baking process, and a step of processing with an alkali developer, and wherein in the step of performing a baking process, a mixing layer is formed on the resist by the upper layer film and in which a thicker mixing layer is formed in an unexposed part of a region where the pattern density of the mask pattern is high compared to a region where the pattern density is low. | 08-12-2010 |
20100201548 | PARALLEL DATA OUTPUT CONTROL CIRCUIT AND SEMICONDUCTOR DEVICE - A CPU outputs digital data from a built-in RAM to a buffer in response to a request from the buffer. The buffer has a FIFO configured of a plurality of stages, each stage of the FIFO is capable of storing one unit (10 bits) of digital data, the buffer as a whole is capable of storing digital data in number of units equivalent to the number of configured stages. A register captures digital data stored inside the buffer by each unit in synchronous with an output control clock. The digital data stored in the register is outputted to a parallel DAC as data for D/A conversion. A WR signal output timer generates a writing control signal having one shot pulse of “L” in synchronous with the output control clock. | 08-12-2010 |
20100199283 | DATA PROCESSING UNIT - When a CPU is processing a first task by using an accelerator for use in image processing, if a request for allocating the accelerator to a process of a second task is issued, the CPU sets an interruption flag when the process of the second task is prioritized over a process of the first task, and the accelerator is allowed to be used for the process of the second task when a state in which the interruption flag is set is detected at a timing predetermined in accordance with a process stage of the accelerator for the first task. Since the timing of detecting the set interruption flag is determined in accordance with a progress state of the process of the task to be interrupted, task switching can be made at a timing of reducing overhead for save and return for the process of the task to be interrupted. | 08-05-2010 |
20100195382 | THIN FILM MAGNETIC MEMORY DEVICE CAPABLE OF CONDUCTING STABLE DATA READ AND WRITE OPERATIONS - A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provided between the fixed and free magnetic layers in a tunnel junction region. In the free magnetic layer, a region corresponding to an easy axis region having characteristics desirable as a memory cell is used as the tunnel junction region. A hard axis region having characteristics undesirable as a memory cell is not used as a portion of the tunnel magnetic resistive element. | 08-05-2010 |
20100194481 | RF POWER AMPLIFIER AND RF POWER MODULE USING THE SAME - The RF power amplifier circuit including multiple amplification stages has a previous-stage amplifier, a next-stage amplifier and a controller. The previous-stage amplifier responds to an RF transmission input signal. The next-stage amplifier responds to an amplification signal output by the previous-stage amplifier. In response to an output-power-control voltage, the controller controls the former- and next-stage amplifiers in quiescent current and gain. In response to the output-power-control voltage, the quiescent current and gain of the previous-stage amplifier are continuously changed according to a first continuous function, whereas those of the next-stage amplifier are continuously changed according to a second continuous function. The second continuous function is higher than the first continuous function by at least one in degree. The RF power amplifier circuit brings about the effect that the drop of the power added efficiency in low and middle power modes is relieved. | 08-05-2010 |
20100193934 | SEMICONDUCTOR DEVICE, A METHOD OF MANUFACTURING THE SAME AND AN ELECTRONIC DEVICE - A novel semiconductor device high in both heat dissipating property and connection reliability in mounting is to be provided. The semiconductor device comprises a semiconductor chip, a resin sealing member for sealing the semiconductor chip, a first conductive member connected to a first electrode formed on a first main surface of the semiconductor chip, and a second conductive member connected to a second electrode formed on a second main surface opposite to the first main surface of the semiconductor chip, the first conductive member being exposed from a first main surface of the resin sealing member, and the second conductive member being exposed from a second main surface opposite to the first main surface of the resin sealing member and also from side faces of the resin sealing member. | 08-05-2010 |
20100193923 | Semiconductor Device and Manufacturing Method Therefor - The reliability of a semiconductor device is prevented from being reduced. A planar shape of a sealing body is comprised of a quadrangle having a pair of first sides, and a pair of second sides crossing with the first sides. Further, it has a die pad, a controller chip (first semiconductor chip) and a sensor chip (second semiconductor chip) mounted over the die pad, and a plurality of leads arranged along the first sides of the sealing body. The controller chip and the leads are electrically coupled to each other via wires (first wires), and the sensor chip and the controller chip are electrically coupled to each other via wires (second wires). Herein, the die pad is supported by a plurality of suspending leads formed integrally with the die pad and extending from the die pad toward the first sides of the sealing body. Each of the suspending leads has an offset part. | 08-05-2010 |
20100193863 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - Described is a method for fabricating a semiconductor device having an FET of a trench-gate structure obtained by disposing a conductive layer, which will be a gate, in a trench extended in the main surface of a semiconductor substrate, wherein the upper surface of the trench-gate conductive layer is formed equal to or higher than the main surface of the semiconductor substrate. In addition, the conductive layer of the trench gate is formed to have a substantially flat or concave upper surface and the upper surface is formed equal to or higher than the main surface of the semiconductor substrate. Moreover, after etching of the semiconductor substrate to form the upper surface of the conductive layer of the trench gate equal to or higher than the main surface of the semiconductor substrate, a channel region and a source region are formed by ion implantation. The semiconductor device thus fabricated according to the present invention is free from occurrence of a source offset. | 08-05-2010 |
20100193764 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device and a method of manufacturing the same with easy formation of a phase change film is realized, realizing high integration at the time of using a phase change film as a memory element. | 08-05-2010 |
20100191934 | MICROCOMPUTER AND DIVIDING CIRCUIT - Herein disclosed is a microcomputer MCU adopting the general purpose register method. The microcomputer is enabled to have a small program capacity or a high program memory using efficiency and a low system cost, while enjoying the advantage of simplification of the instruction decoding as in the RISC machine having a fixed length instruction format of the prior art, by adopting a fixed length instruction format having a power of 2 but a smaller bit number than that of the maximum data word length fed to instruction execution means. And, the control of the coded division is executed by noting the code bits. | 07-29-2010 |
20100191883 | INFORMATION DEVICE INCLUDING MAIN PROCESSING CIRCUIT, INTERFACE CIRCUIT, AND MICROCOMPUTER - An information device packaged in one package includes a main function unit and an interface function unit. The main function unit includes a main processing circuit for executing signal processing related to a main function in the information device and a first microcomputer for controlling the main processing circuit by executing a first firmware program. The interface function unit includes an interface function unit including a first interface circuit for receiving data from an exterior device located outside of the information device to provide to the main function unit, a second interface circuit for performing an authentication operation with the exterior device, a second microcomputer for controlling the first interface circuit, and a memory for storing a second firmware program for controlling the first interface circuit. | 07-29-2010 |
20100190330 | NONVOLATILE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NONVOLATILE SEMICONDUCTOR DEVICE - A semiconductor substrate having a main surface, first and second floating gates formed spaced apart from each other on the main surface of the semiconductor substrate, first and second control gates respectively located on the first and second floating gates, a first insulation film formed on the first control gate, a second insulation film formed on the second control gate to contact the first insulation film, and a gap portion formed at least between the first floating gate and the second floating gate by achieving contact between the first insulation film and the second insulation film are included. With this, a function of a nonvolatile semiconductor device can be ensured and a variation in a threshold voltage of a floating gate can be suppressed. | 07-29-2010 |
20100190306 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CAPABLE OF SUPPRESSING IMPURITY CONCENTRATION REDUCTION IN DOPED CHANNEL REGION ARISING FROM FORMATION OF GATE INSULATING FILM - A method of manufacturing a semiconductor device is provided that can suppress impurity concentration reduction in a doped channel region arising from formation of a gate insulating film. With a silicon oxide film and a silicon nitride film being formed, p-type impurity ions are implanted in a Y direction from diagonally above. As for an implant angle α of the ion implantation, an implant angle is adopted that satisfies the relationship tan | 07-29-2010 |
20100187679 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. | 07-29-2010 |
20100187678 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided. | 07-29-2010 |
20100182847 | NONVOLATILE MEMORY SYSTEM, SEMICONDUCTOR MEMORY AND WRITING METHOD - A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation. | 07-22-2010 |
20100181628 | SEMICONDUCTOR DEVICE - Prevention of disconnection of a bonding wire resulting from adhesive interface delamination between a resin and a leadframe, and improvement of joint strength of the resin and the leadframe are achieved in a device manufactured by a low-cost and simple processing. A boss is provided on a source lead by a stamping processing, and a support pillar is provided in a concave portion on a rear side of the source lead in order to prevent ultrasonic damping upon joining the bonding wire onto the boss, so that an insufficiency of the joint strength between the bonding wire and the source lead is prevented. Also, a continuous bump is provided on the boss so as to surround a joint portion between the source lead and the bonding wire, so that disconnection of the bonding wire resulting from delamination between the resin and the source lead is prevented. | 07-22-2010 |
20100180140 | DATA PROCESSING SYSTEM AND IMAGE PROCESSING SYSTEM - A data processor comprising: a bus control circuit adapted to be interfaced with a synchronous DRAM which can be accessed in synchronism with a clock signal; a plurality of data processing modules coupled to said bus control circuit for producing data and addresses for accessing a memory; and a clock driver for feeding intrinsic operation clocks to said data processing modules and for feeding the clock signal for accessing said memory in synchronism with the operations of said data processing modules to be operated by the operation clock signals, to the outside. | 07-15-2010 |
20100179976 | SEMICONDUCTOR DEVICE PERFORMING OPERATIONAL PROCESSING - A semiconductor device includes a decoder receiving first multiplier data of 3 bits indicating a multiplier to output a shift flag, an inversion flag, and an operation flag in accordance with Booth's algorithm, and a first partial product calculation unit receiving first multiplicand data of 2 bits indicating a multiplicand, a shift flag, an inversion flag, and an operation flag to select one of the higher order bit and lower order bit of the first multiplicand data based on the shift flag, invert or non-invert the selected bit based on the inversion flag, select one of the inverted or non-inverted data and data of a predetermined logic level based on the operation flag, and output the selected data as partial product data indicating the partial product of the first multiplier data and the first multiplicand data. | 07-15-2010 |
20100178879 | RF POWER MODULE - A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components. | 07-15-2010 |
20100178752 | SEMICONDUCTOR DEVICE AND FUSE BLOWOUT METHOD - A fuse includes a fuse portion laid in such a manner that the direction of each turn of the fuse portion is parallel to the direction in which pads are arranged. The distance between the pads and the fuse portion is defined as the distance between the side of a pad facing the fuse portion and the pad nearest to the turn facing the particular side. The distance between the turn of the fuse portion and the nearest pad is the distance between the pads and the fuse portion. The pads and the fuse portion are distant from each other by a length at least ten times the width of the fuse. | 07-15-2010 |
20100177814 | EQUALIZER AND SEMICONDUCTOR DEVICE - The present invention provides an equalizer and a semiconductor device, that can suppress a decrease in S/N ratio of a reception signal, can facilitate a disconnection test by a direct current signal, and are excellent in reproducibility of a transmission signal. A low-pass filter receives a reception signal supplied from a reception end to output a signal obtained by removing a high frequency component from the reception signal. A subtraction unit subtracts an output signal from the low-pass filter from the reception signal. An addition unit adds the reception signal from the reception end to an output signal from the subtraction unit. Thus, an output signal from the addition unit has a frequency characteristic of emphasizing the high frequency component. Then, an amplifier amplifies the output signal from the addition unit to transmit it to an output end. | 07-15-2010 |
20100177444 | VCM DRIVER AND PWM AMPLIFIER - The present invention provides a VCM driver realizing low power consumption and high accuracy and a PWM amplifier compensating a dead time distortion. A phase compensator, a ΔΣ modulator receiving an output signal of the phase compensator and converting the output signal to a control code of predetermined bits, a PWM modulator receiving the control code to produce a PWM signal, and an output circuit receiving the PWM signal to drive a voice coil constitute a forward path. A sense amplifier sensing a current of the voice coil, an ADC receiving an output signal of the sense amplifier, a low-pass filter receiving an output signal of the ADC, and a decimation filter receiving an output signal of the low-pass filter constitute a feedback path. An output signal of the decimation filter is fed back to the input side of the phase compensator to form a major feedback loop having a first-order characteristic loop gain. An output signal of the decimation filter is fed back to the output side of the phase compensator to form a minor feedback loop having a loop gain which is flat until a target band frequency when viewed from the output side of the phase compensator. | 07-15-2010 |
20100177127 | LED DRIVING CIRCUIT, SEMICONDUCTOR ELEMENT AND IMAGE DISPLAY DEVICE - An LED driving circuit driving an LED array includes: n constant-current driving elements having a vertical structure, each of which is connected to each of LED strings in series and drives the LED string with a constant current; n constant-current control circuits controlling on voltages of the constant-current driving elements so that currents flowing to the LED strings become constant currents; a lowest-voltage detecting circuit to which terminal voltages of the constant-current driving elements on an LED string side are inputted, the lowest-voltage detecting circuit selecting a lowest voltage from among the terminal voltages and outputting a command signal based on difference between the lowest voltage and a predetermined set voltage; and a power-supply control circuit controlling a voltage applied to the LED array to a voltage lower than an initial set voltage based on the command signal. | 07-15-2010 |
20100176782 | SEMICONDUCTOR CIRCUIT AND SWITCHING POWER SUPPLY APPARATUS - To provide a power supply apparatus which realizes a high-speed response, a stable operation, and a low output ripple with low power consumption. The first stage switching regulator receives an input voltage and forms a first voltage. The second stage switching regulator receives the first voltage and forms a second voltage. The second stage switching regulator includes an N-phase (N is two or more) switching regulator, and the first voltage is set to be N times a target value of the second voltage. The input voltage is set to be higher than the first voltage. | 07-15-2010 |
20100176511 | SEMICONDUCTOR DEVICE WITH A LINE AND METHOD OF FABRICATION THEREOF - A semiconductor device includes an interlayer insulation film, an underlying line provided in the interlayer insulation film, a liner film overlying the interlayer insulation film, an interlayer insulation film overlying the liner film. The underlying line has a lower hole and the liner film and the interlayer insulation film have an upper hole communicating with the lower hole, and the lower hole is larger in diameter than the upper hole. The semiconductor device further includes a conductive film provided at an internal wall surface of the lower hole, a barrier metal provided along an internal wall surface of the upper hole, and a Cu film filling the upper and lower holes. The conductive film contains a substance identical to a substance of the barrier metal. A highly reliable semiconductor device can thus be obtained. | 07-15-2010 |
20100176463 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - In order to provide a technique capable of executing an etching process using a dry etching method and a wet etching method in combination with high processing dimensional accuracy, an interlayer insulating film | 07-15-2010 |
20100176430 | Semiconductor Device with Reduced Parasitic Inductance - The present invention provides a technology for reducing the parasitic inductance of the main circuit of a power source unit. In a non-insulated DC-DC converter having a circuit in which a power MOSFET for high side switch and a power MOSFET for low side switch are connected in series, the power MOSFET for high side switch and the power MOSFET for low side switch are formed of n-channel vertical MOSFETs, and a source electrode of the power MOSFET for high side switch and a drain electrode of the power MOSFET for low side switch are | 07-15-2010 |
20100173461 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region. | 07-08-2010 |
20100171183 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CARRYING OUT ION IMPLANTATION BEFORE SILICIDE PROCESS - An N-type source region and an N-type drain region of N-channel type MISFETs are implanted with ions (containing at least one of F, Si, C, Ge, Ne, Ar and Kr) with P-channel type MISFETs being covered by a mask layer. Then, each gate electrode, source region and drain region of the N- and P-channel type MISFETs are subjected to silicidation (containing at least one of Ni, Ti, Co, Pd, Pt and Er). This can suppress a drain-to-body off-leakage current (substrate leakage current) in the N-channel type MISFETs without degrading the drain-to-body off-leakage current in the P-channel type MISFETs. | 07-08-2010 |
20100171087 | SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME - In a semiconductor device including a phase change memory element whose memory layer is formed of a phase change material of M (additive element)-Ge (germanium)-Sb (antimony)-Te (tellurium), both of high heat resistance and stable data retention property are achieved. The memory layer has a fine structure with a different composition ratio therein, and an average composition of M | 07-08-2010 |
20100167525 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - A seal ring is provided between a region where a circuit is formed on a semiconductor substrate and a dicing region. The seal ring has a portion where sealing layers of which the cross sectional form is in T-shape are layered and a portion where sealing layers of which the cross sectional form is rectangular are layered. | 07-01-2010 |
20100167492 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention aims at offering the semiconductor device which has the structure which are a high speed and a low power, and can be integrated highly. The present invention is a semiconductor device formed in the SOI substrate by which the BOX layer and the SOI layer were laminated on the silicon substrate. And the present invention is provided with the FIN type transistor with which the gate electrode coiled around the body region formed in the SOI layer, and the planar type transistor which was separated using partial isolation and full isolation together to element isolation, and was formed in the SOI layer. | 07-01-2010 |
20100167468 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes a bonding step of bonding a chip on a wiring board by means of a bonding layer, and a wire bonding step of bonding a wire to a pad on the chip while applying ultrasonic vibration after the bonding step. A material having an elastic modulus of 100 MPa or higher at a process temperature in the wire bonding step is used as the bonding layer. | 07-01-2010 |
20100165776 | SEMICONDUCTOR DEVICE - A semiconductor device capable of reducing power consumption is provided. When a power to an internal circuit is interrupted, e.g., in a standby mode, a switch is turned off, and a pseudo-ground line is charged with a leak current of the internal circuit to raise a potential thereof. After the switch is turned off, a switch connected to a charge supply unit is turned on while the potential is rising, so that the charge supply unit is electrically coupled to the pseudo-ground line. Thereby, charges accumulated in the charge supply unit are discharged to the pseudo-ground line. The switch is turned off to decouple electrically the charge supply unit from the pseudo-ground line. Thereby, when the power supply is interrupted, a part of the charges for raising the potential of the pseudo-ground line is supplemented with the charges of the charge supply unit. | 07-01-2010 |
20100165775 | SEMICONDUCTOR DEVICE HAVING ELECTRICAL FUSES WITH LESS POWER CONSUMPTION AND INTERCONNECTION ARRANGEMENT - In fuse program circuits, fuse element FS is implemented using metal interconnect at third or higher layer of multilayer metal interconnect. In each fuse program circuit, program information and fuse select information are sequentially transferred using a scan flip-flops, and fuses are selectively and electrically blown one by one. The fuse program circuit provided with fuse elements that can be programmed even after packaging is implemented with low power consumption and a low occupation area. | 07-01-2010 |
20100165706 | STATIC MEMORY CELL HAVING INDEPENDENT DATA HOLDING VOLTAGE - A static memory cell, composed of cross-coupled MOS transistors having a relatively high threshold voltage, is equipped with MOS transistors for controlling the power supply line voltage of the memory cell. To permit the voltage difference between two data storage nodes in the inactivated memory cell to exceed the voltage difference between the two nodes when write data is applied from a data line pair DL and /DL to the two nodes in the activated memory cell, the power supply line voltage control transistors are turned on to apply a high voltage VCH to the power supply lines after the word line voltage is turned off. The data holding voltage in the memory cell can be activated to a high voltage independent of the data line voltage, and the data holding voltage can be dynamically set so that read and write operations can be performed at high speed with low power consumption. | 07-01-2010 |
20100165691 | CONTENT ADDRESSABLE MEMORY - An entry including multiple bits of unit cells each storing data bit is coupled to a match line. The match line is supplied with a charging current having a restricted current value smaller than a match line current flowing in a one-bit miss state in one entry, but larger than a match line current flowing in an all-bit match state in one entry. | 07-01-2010 |
20100164613 | SEMICONDUCTOR DEVICE REDUCING LEAKAGE CURRENT OF TRANSISTOR - A semiconductor device includes: a first transistor having a control electrode coupled to an input node receiving a signal synchronized with a clock, a first conductive electrode coupled to an output node, and a second conductive electrode; a second transistor having a control electrode coupled to the input node, a first conductive electrode coupled to the output node, and a second conductive electrode coupled to a power supply node; and a first switch element connected between the power supply node and the second conductive electrode of the second transistor and turned on and off based on a first control signal indicating a detection result of a frequency of the clock. | 07-01-2010 |
20100159690 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE THAT USES BOTH A NORMAL PHOTOMASK AND A PHASE SHIFT MASK FOR DEFINING INTERCONNECT PATTERNS - According to one embodiment of the present invention, a method of manufacturing a semiconductor device includes below steps. | 06-24-2010 |
20100159687 | SEMICONDUCTOR DEVICE HAVING ELECTRODE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film. | 06-24-2010 |
20100157689 | SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of nonvolatile memory cells ( | 06-24-2010 |
20100156876 | LIQUID CRYSTAL DISPLAY CONTROLLER AND LIQUID CRYSTAL DISPLAY DEVICE - In conventional liquid crystal display controllers such as for portable telephone sets, the display is reduced in the stand-by state but the liquid crystal display duty is not changed, i.e., even the common electrodes of the rows that are not producing display are scanned, and the consumption of electric power is not decreased to a sufficient degree in the stand-by state. A liquid crystal display controller ( | 06-24-2010 |
20100155940 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a plurality of elements, an interlayer insulating film, a pad, and a bump electrode electrically connected with the pad sequentially formed on a main surface of a silicon substrate and has a back-surface electrode formed on a back surface of the silicon substrate and electrically connected with the bump electrode. The bump electrode has a protruding portion penetrating through the pad and protruding toward the silicon substrate side. The back-surface electrode is formed so as to reach the protruding portion of the bump electrode from the back surface side of the silicon substrate toward the main surface side and to cover the inside of a back-surface-electrode hole portion which does not reach the pad, so that the back-surface electrode is electrically connected with the bump electrode. | 06-24-2010 |
20100155822 | SEMICONDUCTOR MEMORY DEVICE WITH BIT LINE OF SMALL RESISTANCE AND MANUFACTURING METHOD THEREOF - A reduction of a resistance of a bit line of a memory cell array and a reduction of a forming area of the memory cell array are planed. | 06-24-2010 |
20100151673 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen. The predetermined additive element reacts with nitrogen to form a high-resistance part. In addition, the concentration of the predetermined additive element is not more than 0.04 wt %. | 06-17-2010 |
20100149883 | SEMICONDUCTOR DEVICE - In a semiconductor device having a data input buffer capable of inputting write data to each of memory units, the data input buffer is changed from an inactive state to an active state after the reception of instruction for a write operation effected on the memory unit. The data input buffer is a differential input buffer having interface specs based on SSTL, for example, which is brought to an active state by the turning on of a power switch to thereby cause a through current to flow and receives a signal therein while immediately following a small change in small-amplitude signal. Since the input buffer is brought to the active state only when the write operation's instruction for the memory unit is provided, the data input buffer is rendered inactive in advance, before the instruction for the write operation is provided, whereby wasteful power consumption is reduced. In another aspect, power consumption is reduced by changing from the active to the inactive state in a time period from a write command issuing to a next command issuing. | 06-17-2010 |
20100148350 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a POP type semiconductor device comprising a second semiconductor package as an upper package stacked on a first semiconductor package as a lower package, a plurality of main surface-side lands formed on a first wiring substrate of the first semiconductor package are disposed distributively on both sides of a chip mounting region as a boundary positioned at a central part of a main surface of the first wiring substrate, thus permitting the adoption of a through molding method. Consequently, a first sealing body formed on the main surface of the first wiring substrate in the first semiconductor package as a lower package extends from one second side of the first wiring substrate toward a central part of the other second side of the same substrate. | 06-17-2010 |
20100142279 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING ASSIST GATE - In this AG-AND type flash memory, a layered bit line configuration where a memory array is divided into a plurality of sub blocks, new main bit lines are allocated so as to correspond to each sub block, and a main bit line is selectively connected to a global bit line in an upper layer via a switch is adopted, so that charge sharing write-in is carried out between two main bit lines. Accordingly, write-in of data into the flash memory can be carried out with low power consumption, and the threshold voltage can be controlled with precision. | 06-10-2010 |
20100140718 | SEMICONDUCTOR DEVICE - A semiconductor device having a plurality of chips is reduced in size. In HSOP (semiconductor device) for driving a three-phase motor, a first semiconductor chip including a pMISFET and a second semiconductor chip including an nMISFET are mounted over each of a first tab, second tab, and third tab. The drains of the pMISFET and nMISFET over each tab are electrically connected with each other. Thus, two of six MISFETs can be placed over each of three tabs divided in correspondence with the number of phases of the motor, and they can be packaged in one in a compact manner. As a result, the size of the HSOP for driving a three-phase motor, having a plurality of chips can be reduced. | 06-10-2010 |
20100140711 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Generation of dislocation and increase of diffusion resistance at edge portions of source/drain regions in a CMIS are prevented. When source/drain regions in a CMIS are formed, argon is implanted to a P-well layer as a dislocation-suppressing element and nitrogen is implanted to an N-well layer as a dislocation-suppressing element before an ion implantation of impurities to a silicon substrate. In this manner, by separately implanting dislocation-suppressing elements suitable for each of the P-well layer and the N-well layer as well as suppressing the generation of dislocation, increase of diffusion resistance can be suppressed, yield can be improved, and the reliability of devices can be increased. | 06-10-2010 |
20100140681 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREFOR - An active region on a semiconductor substrate is electrically isolated by trench isolation. A structure of the trench isolation is constituted of a trench; a silicon oxide film formed on the inner wall of trench; an oxidation preventive film formed between silicon oxide film and semiconductor substrate; and a filling oxide film filling trench. Gate oxide film is formed by oxidation having a high capability by which radicals of at least one kind of hydrogen radicals and oxygen radicals are generated. Thereby, gate oxide film is formed so as to have a almost uniform thickness such that a thickness of a region directly above oxidation preventive film and a thickness of a region directly below gate electrode are almost the same is each other. According to the above procedure, there are obtained a semiconductor device having good transistor characteristics and a fabrication process therefor. | 06-10-2010 |
20100136487 | PATTERN FORMATION METHOD USING LEVENSON-TYPE MASK AND METHOD OF MANUFACTURING LEVENSON-TYPE MASK - A method of forming a pattern including a first pattern portion having a first minimum dimension and a second pattern portion having a second minimum dimension includes a first exposure step of performing exposure using a Levenson-type mask and a second exposure step of performing exposure using a half tone-type mask. When second minimum dimension is 1.3 time or more than the first minimum dimension, the exposure amount of the second exposure step is set to be equal to or smaller than the exposure amount of the first exposure step. | 06-03-2010 |
20100135079 | MULTILEVEL STORAGE NONVOLATILE SEMICONDUCTOR MEMORY DEVICE ENABLING HIGH-SPEED DATA READING AND HIGH-SPEED DATA WRITING - A nonvolatile semiconductor memory device transmits/receives data to/from a data input/output terminal every j bits (e.g., eight bits). Each of memory cells in a memory cell array can hold data of n bits in correspondence to 2 | 06-03-2010 |
20100134163 | SEMICONDUCTOR INTEGRATED CIRCUIT - A phase locked loop (PLL) which has a desired frequency characteristic even though a manufacturing process of a semiconductor integrated circuit has fluctuations. The semiconductor integrated circuit includes the PLL and a control unit. The PLL has a phase frequency detector, a loop filter, a voltage controlled oscillator (VCO) and a divider. The VCO comprises a voltage-current converter (VIC) and a ring oscillator. In response to a control voltage, the VIC generates a control current for setting each operating current of the ring oscillator. The control unit switches the PLL to a calibration operating period of its open loop and a normal operating period of its closed loop. | 06-03-2010 |
20100131093 | FABRICATION SYSTEM AND FABRICATION METHOD - A fabricating method for a system that includes a plurality of processing apparatuses connected to each other by an inter-apparatus transporter and a computer storing managing information of processing and transporting of semiconductor wafers. The processing apparatuses have an interface for loading and unloading a plurality of the semiconductor wafers that are contained in a carrier. The semiconductor waters are processed in processing chambers of the processing apparatuses and the result of processing is monitored. In the processing, a first carrier containing the plurality of the semiconductor wafers having been processed in the first processing apparatus is transported toward the second processing apparatus by the inter-apparatus transporter prior to unloading of a second carrier containing semiconductor wafers processed in the second processing apparatus, according to the managing information. | 05-27-2010 |
20100127683 | SEMICONDUCTOR DEVICE INCLUDING A DC-DC CONVERTER - The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring. | 05-27-2010 |
20100127306 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate. | 05-27-2010 |
20100117737 | RF POWER AMPLIFIER - A reduction is achieved in the primary-side input impedance of a transformer (voltage transformer) as an output matching circuit without involving a reduction in Q-factor. An RF power amplifier includes transistors, and a transformer as the output matching circuit. The transformer has a primary coil and a secondary coil which are magnetically coupled to each other. To the input terminals of the transistors, respective input signals are supplied. The primary coil is coupled to each of the output terminals of the transistors. From the secondary coil, an output signal is generated. The primary coil includes a first coil and a second coil which are coupled in parallel between the respective output terminals of the transistors, and each magnetically coupled to the secondary coil. By the parallel coupling of the first and second coils of the primary coil, the input impedance of the primary coil is reduced. | 05-13-2010 |
20100117225 | SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME - In a non-insulated DC-DC converter having a circuit in which a power MOS•FET high-side switch and a power MOS•FET low-side switch are connected in series, the power MOS•FET low-side switch and a Schottky barrier diode to be connected in parallel with the power MOS•FET low-side switch are formed within one semiconductor chip. The formation region SDR of the Schottky barrier diode is disposed in the center in the shorter direction of the semiconductor chip, and on both sides thereof, the formation regions of the power MOS•FET low-side switch are disposed. From the gate finger in the vicinity of both long sides on the main surface of the semiconductor chip toward the formation region SDR of the Schottky barrier diode, a plurality of gate fingers are disposed so as to interpose the formation region SDR between them. | 05-13-2010 |
20100117081 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE FOR DRIVING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor integrated circuit device for driving an LCD, COG chip packaging is performed. To achieve this, an elongate and relatively thick gold bump electrode is formed over an aluminum-based pad having a relatively small area. In a wafer probe test performed after formation of the gold bump electrode, a cantilever type probe needle having gold as a main component and having an almost perpendicularly bent tip portion is used. The diameter of this probe needle in the vicinity of its tip is usually almost the same as the width of the gold bump electrode. This makes it difficult to perform the wafer probe test stably. To counteract this, a plurality of bump electrode rows for outputting a display device drive signal are formed such that the width of inner bump electrodes is made greater than the width of outer bump electrodes. | 05-13-2010 |
20100112805 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer. | 05-06-2010 |
20100111146 | COMMUNICATION DEVICE AND COMMUNICATION SYSTEM - A communication device with digital and analog circuits mixedly mounted thereon, for which the influence of noise generated in its interface part on the analog circuit part can be reduced, which does not interfere with the downsizing of the communication device. The communication device has a communication part, such as semiconductor communication device, and a control part, such as a semiconductor control device operable to control the communication part. The communication part and control part are operated in asynchronization with each other. The communication part includes an analog circuit. The interface circuit of the communication part, which is interfaced with the control part, receives a clock signal supplied from the communication part and conducts a synchronous interface. The control part stops supplying the clock signal during the time when the communication part operates the analog circuit. | 05-06-2010 |
20100109761 | SEMICONDUCTOR DEVICE INCLUDING INTERNAL VOLTAGE GENERATION CIRCUIT - A semiconductor integrated circuit device has a negative voltage generation circuit provided at each power supply circuit unit for six memory macros. Therefore, the response with respect to variation in a negative voltage is increased. In a standby mode, a negative voltage supply line for the six memory macros is connected by a switch circuit, and only a negative voltage generation circuit of one power supply circuit unit among six negative voltage generation circuits of the six power supply circuit units is rendered active. Thus, increase in standby current can be prevented. | 05-06-2010 |
20100109745 | LEVEL CONVERSION CIRCUIT FOR CONVERTING VOLTAGE AMPLITUDE OF SIGNAL - In a level conversion circuit, two P channel MOS transistors form a current mirror circuit. When an input signal rises from the “L” level to the “H” level, an N channel MOS transistor connected to a drain of one P channel MOS transistor is brought out of conduction to prevent a leak current from flowing through two P channel MOS transistors, which decreases a power consumption. In addition, when the input signal rises from the “L” level to the “H” level, a P channel MOS transistor connected to a drain of the other P channel MOS transistor is brought into conduction to fix a potential of a node of the drain of the other P channel MOS transistor to the “H” level, which prevents the potential of the node from becoming unstable. | 05-06-2010 |
20100109064 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a silicon substrate having an active region, a memory transistor having a pair of source/drain regions and a gate electrode layer, a hard mask layer on the gate electrode layer having a plane pattern shape identical with that of the gate electrode layer, and plug conductive layers each electrically connected to each of the pair of source/drain regions. An extending direction of the active region is not perpendicular to that of the gate electrode layer, but is oblique. Upper surfaces of the hard mask layer and each of the plug conductive layers form substantially an identical plane. This can attain a semiconductor device allowing significant enlargement of a margin in a photolithographic process, suppression of an “aperture defect” as well as ensuring of a process tolerance of a “short” by decreasing a microloading effect, and decrease in a contact resistance, and a manufacturing method thereof. | 05-06-2010 |
20100104986 | METHOD FOR FORMING PATTERN - In an exposure step, a combination of a first photomask and a second mask is used. The first mask has a real pattern corresponding to the pattern actually formed on the film to be processed, and a dummy pattern added for controlling pattern pitch in the first photomask within a prescribed range; and the second photomask has a pattern isolating a real-pattern-formed region from a dummy-pattern-formed region. In forming the pattern, after forming a film to be processed on a substrate, a first mask is formed on the film to be processed, by lithography, using the first photomask, and a second mask is formed on the film to be processed, by lithography, using the second photomask. Thereafter, the film to be processed is etched and removed using the first and second masks as masks to form the pattern. | 04-29-2010 |
20100104983 | PATTERN FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND EXPOSURE MASK SET - First, a first exposure process is performed using dipole illumination with only a grating-pattern forming region as a substantial object to be exposed. Next, a second exposure process is performed with only a standard-pattern forming region as a substantial object to be exposed. A development process is then performed to obtain a resist pattern. A mask for the first exposure process is such that a light blocking pattern is formed on the whole surface of a standard-pattern mask part corresponding to the standard-pattern forming region. A mask for the second exposure is such that a light blocking pattern is formed on the whole surface of a grating-pattern mask part corresponding to the grating-pattern forming region. | 04-29-2010 |
20100104013 | MULTIPLEXING CONTROL UNIT - Provided is a multiplexing control unit operable to execute multiplex (MUX) and demultiplex (DEMUX), and enhanced in its processing performance. The multiplexing control unit includes a transport stream (TS) buffer, a multiplex-processing part, a video buffer and an audio buffer. When supplied with coded video and audio data from video and audio buffers, the multiplex-processing part conducts MUX, and on the other executes DEMUX on TS data stored in the TS buffer thereby to produce coded video and audio data. MUX and DEMUX processes by the multiplex-processing part are executed in sets of more than one frame processed according to moving-picture compression coding. Before start of execution of the process, whether or not the requirement of preparation for the execution is satisfied is judged inside the device, in which the judgment is made by checking storing states of the buffers. | 04-29-2010 |
20100102887 | ELECTRONIC COMPONENT FOR HIGH FREQUENCY POWER AMPLIFICATION - An electronic component for high frequency power amplification realizes an improvement in switching spectrum characteristics. The gain of an amplifying NMOS transistor is controlled by a bias voltage on which a bias control voltage is reflected. Further, a threshold voltage compensator compensates for a variation in threshold voltage with variations in the manufacture of the amplifying NMOS transistor. The threshold voltage compensator includes an NMOS transistor formed in the same process specification as the amplifying NMOS transistor and converts a variation in current flowing through the NMOS transistor depending on the variation in the threshold voltage of the amplifying NMOS transistor to its corresponding voltage by a resistor to compensate for the bias voltage. It is thus possible to reduce variations in so-called precharge level brought to fixed output power in a region (0 dBm or less, for example) low in output power. | 04-29-2010 |
20100099234 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF - A method includes the steps of: introducing insulation film into a trench to provide a trench isolation; planarizing the trench isolation to expose a passivation film; and removing the passivation film and depositing a second silicon layer on a first silicon layer and the trench isolation; and in the step of depositing the first silicon layer the first silicon layer is an undoped silicon layer and in the step of depositing the second silicon layer the second silicon layer is a doped silicon layer or an undoped silicon layer subsequently having an impurity introduced thereinto or the like and thermally diffused through subsequent thermal hysteresis into the first silicon layer. | 04-22-2010 |
20100097041 | PFC CONTROLLER, SWITCHING REGULATOR AND POWER SUPPLY CIRCUIT - A PFC counter which controls a switching element of voltage step-up chopper circuits arranged in parallel has a circuit (SLOG) generating a switch signal (GD_S) whose phase is shifted from that of a switch signal of one of the switching elements. This circuit has a first counter (COUNTM) which counts clock signals by a cycle unit of one of the switch signals; a second counter (COUNTS) which counts clock signals by a cycle unit having a predetermined phase difference with respect to one of the switch signals; and a first register (REG | 04-22-2010 |
20100096667 | SEMICONDUCTOR DEVICE - There is provided a technique for reducing the occurrence of higher harmonics which occur from a field effect transistor, particularly a field effect transistor configuring a switching element of an antenna switch. In a transistor having a meander structure, the gate width of a partial transistor closest to a gate input side is increased. More specifically, a comb-like electrode is made longer than the other comb-like electrodes. In other words, a finger length is made greater than any other finger length. In particular, the comb-like electrode has the greatest length in all the comb-like electrodes. | 04-22-2010 |
20100093145 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF FOR REDUCING THE AREA OF THE MEMORY CELL REGION - A structure is adopted for a layout of an SRAM cell which provides a local wiring | 04-15-2010 |
20100091557 | MAGNETIC RANDOM ACCESS MEMORY HAVING IMPROVED READ DISTURB SUPPRESSION AND THERMAL DISTURBANCE RESISTANCE - Between the value of an electric current and the supply duration for which the electric current is supplied that cause magnetization reversal, there is the relation of monotonous decrease. This means that, as the supply duration is shortened, the threshold current value for causing the magnetization reversal is larger. Therefore, in terms of suppressing occurrence of read disturb, the read current supply duration may be shortened to increase the threshold value of the current causing the magnetization reversal and thereby ensure a sufficient read disturb margin. Therefore, the read current supply duration may be shortened relative to the write current supply duration ensure the read disturb margin and suppress occurrence of read disturb. | 04-15-2010 |
20100091192 | Broadcast Receiving Device and Program Selecting Method - A tuner receives broadcast data on specified channels. A channel search unit controls the tuner to search for available channels, and creates a channel map representing the available channels and a selection order thereof. A channel order setting unit changes setting about enabling/disabling of the selection and/or the selection order of the channels in the channel map. An operation input unit accepts a channel selecting operation of a user. When the user performs an operation for channel forward selection or channel reverse selection through the operation input unit, a channel switching unit changes the selection of the channel according to the channel map and causes the tuner to receive the broadcast data on the selected channel. | 04-15-2010 |
20100090767 | RF AMPLIFICATION DEVICE - An RF amplification device has amplification elements which amplify a radio frequency input signal in wireless radio communication. Transmission line transformers are coupled to one of an input electrode and an output electrode of the amplification elements and have a main line Lout arranged between the input and the output, and a sub line Lin | 04-15-2010 |
20100090333 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF SEMICONDUCTOR MODULE - An improvement is achieved in the mounting reliability of a semiconductor device. A semiconductor chip is mounted over an upper surface of a wiring substrate. A plurality of solder balls are disposed individually over a plurality of lands formed on a lower surface of the wiring substrate. The plural lands include a first land group arranged in a plurality of rows and arranged along a peripheral edge portion of the lower surface of the wiring substrate, and a second land group arranged inside the first land group in the lower surface of the wiring substrate. The lands in the first land group are arranged with a first pitch, and the lands in the second land group are arranged with a second pitch higher than the first pitch. | 04-15-2010 |
20100090014 | SEMICONDUCTOR DEVICE AND RFID TAG CHIP - The present invention provides a reference power supply circuit which does not require trimming and prevents occurrence of deadlock of a band gap reference circuit. An RFID tag chip related to the present invention has a reference power supply including a switch for switching between a band gap reference circuit and a Vth difference reference circuit. A reference potential in band gap reference of the band gap reference circuit and an output of the Vth difference reference circuit are compared by a comparator, and a transistor operating as a switch is controlled, thereby making the reference potential in band gap reference rise, hastening startup of the band gap reference circuit, and preventing occurrence of deadlock in the band gap reference circuit. | 04-15-2010 |
20100087064 | METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - The present inventors have found that a wafer process of VLSI (Very Large Scale Integration) has the following problem, that is, generation of foreign matters due to moisture from a wafer as a result of degassing when a barrier metal film or a first-level metal interconnect layer is formed by sputtering as a preliminary step for the formation of a tungsten plug in a pre-metal step. To overcome the problem, the present invention provides a manufacturing method of a semiconductor integrated circuit device including, in a plasma process, in-situ monitoring of moisture in a processing chamber by receiving an electromagnetic wave generated from plasma. | 04-08-2010 |
20100084698 | SEMICONDUCTOR DEVICE HAVING PLURAL DRAM MEMORY CELLS AND A LOGIC CIRCUIT AND METHOD FOR MANUFACTURING THE SAME - A memory cell capacitor (C | 04-08-2010 |
20100080647 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF MASK - Provided is a technique capable of improving the dimensional accuracy of a transfer pattern in a lithography technique in which EUV light is used and the EUV light is incident obliquely on a mask and an image of the EUV light reflected from the mask is formed on a semiconductor substrate (resist film), thereby transferring the pattern formed on the mask onto the semiconductor substrate. The present invention is based on a lithography technique in which EUV light is used and an exposure optical system in which the EUV light is obliquely incident on a mask is used. In this lithography technique, an absorber and a difference in level are formed on the mask, and a projective component projected on a mask surface out of a direction cosine component of the incident light is set to be almost orthogonal to an extending direction of the difference in level. | 04-01-2010 |
20100080058 | SEMICONDUCTOR DEVICE - The semiconductor device includes a nonvolatile memory, having a memory array containing 1-bit twin cells, each composed of electrically rewritable first and second storage devices, the first and second storage devices holding binary data according to difference of their threshold voltages, and having different retention characteristics depending on difference of the binary data thereof; a read circuit for differentially amplifying complementary data output from the first and second storage devices of the twin cell selected for read, and judging information stored in the twin cell; and a control circuit. Two memory cells constituting a twin cell are arranged to hold different data. Therefore, even when the retention performance of one memory cell deteriorates, the difference between data held by the two memory cells can be maintained. Hence, differential amplification of such difference enables acquisition of proper stored information. Thus, retention performance of an electrically rewritable nonvolatile memory cell is improved. | 04-01-2010 |
20100079479 | DISPLAY DRIVE CIRCUIT - A display drive circuit of the invention has: an initial-color-gamut-apex-coordinate-storing unit capable of storing initial color gamut apex coordinates; a user-target-color-gamut-apex-coordinate-storing unit capable of storing user target color gamut apex coordinates; a saturation-expansion-coefficient-deciding unit for deciding expansion coefficients of saturation data based on the initial and user target color gamut apex coordinates; and an expansion unit for expanding saturations of display data based on the saturation expansion coefficients. The expansion coefficients of saturation data are decided based on the initial and user target color gamut apex coordinates, and saturations of display data are expanded according to the expansion coefficients. Thus, the degree of expanding the saturations can be controlled for each color gamut or each of R, G and B color properties of an LC display panel. | 04-01-2010 |
20100072604 | SEMICONDUCTOR DEVICE - To provide a technique of supplying a voltage generated in any of a plurality of semiconductor chips to the other chip as a power supply voltage to realize a stable operation of a semiconductor device in which the semiconductor chips are stacked in the same package. | 03-25-2010 |
20100072284 | SEMICONDUCTOR DEVICE AND ADAPTOR FOR THE SAME - Connector terminals are arranged at the center of a thin memory card | 03-25-2010 |
20100069020 | SEMICONDUCTOR INTEGRATED CIRCUIT, RF MODULE USING THE SAME, AND RADIO COMMUNICATION TERMINAL DEVICE USING THE SAME - One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg | 03-18-2010 |
20100066284 | DRIVE SYSTEM OF SYNCHRONOUS MOTOR - A position sensorless drive method capable of driving a permanent magnet motor by an ideal sine-wave current and enabling the driving from an extremely low-speed range in the vicinity of zero-speed is provided. A neutral-point potential of the permanent magnet motor is detected in synchronization with a PWM waveform of an inverter. The position of a rotor of the permanent magnet motor is estimated from the variation of the neutral-point potential. Since the neutral-point potential is varied in accordance with the magnetic circuit characteristics of an individual permanent magnet motor, the position can be detected regardless of the presence of saliency of the permanent magnet motor. | 03-18-2010 |
20100059875 | SEMICONDUCTOR DEVICE - The reliability of a semiconductor device is improved. | 03-11-2010 |
20100055879 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A wafer is mounted on the top surface of the stage having an electrostatic chuck function, and the wafer at 50° C. or more is cooled to a temperature lower than 50° C. In this step, the voltage to be applied to the internal electrode provided in the stage is raised stepwise to gradually increase the contact area between the back surface of the wafer and the top surface of the stage. Finally, a chuck voltage is applied to the internal electrode, so that the entire back surface of the wafer is uniformly attracted to the top surface of the stage. This reduces damage occurring in the top surface of the stage due to rubbing between the back surface of the wafer and the top surface of the stage. | 03-04-2010 |
20100052813 | BRANCHING FILTER, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND COMMUNICATION MOBILE TERMINAL - A technique for realizing module size reduction while enhancing the anti-ESD characteristic of a low frequency band circuit without the need to add such an element as an ESD filter. In a diplexer included in a high-frequency power amplifier module, a composite grounding inductor with respect to an antenna terminal is formed of three inductors including a series inductor contained in a lowpass filter. Since an ESD signal contains main components thereof belonging to a frequency band of the order of a few hundreds of MHz or lower, the ESD signal is allowed to pass through a lowpass filter almost intactly. Under this condition, a function for ESD filtering from the antenna terminal to an antenna switch circuit is provided by using the composite grounding inductor mentioned above and an electrostatic capacitor element, thereby suppressing passage of the ESD signal to the antenna switch circuit. | 03-04-2010 |
20100044854 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME AND A MOUNTING STRUCTURE OF A SEMICONDUCTOR DEVICE - A semiconductor device is disclosed which includes a tab ( | 02-25-2010 |
20100044793 | SEMICONDUCTOR DEVICE HAVING A PLURALITY OF MISFETS FORMED ON A MAIN SURFACE OF A SEMICONDUCTOR SUBSTRATE - In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs | 02-25-2010 |
20100044772 | NONVOLATILE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NONVOLATILE SEMICONDUCTOR DEVICE - A semiconductor substrate having a main surface, first and second floating gates formed spaced apart from each other on the main surface of the semiconductor substrate, first and second control gates respectively located on the first and second floating gates, a first insulation film formed on the first control gate, a second insulation film formed on the second control gate to contact the first insulation film, and a gap portion formed at least between the first floating gate and the second floating gate by achieving contact between the first insulation film and the second insulation film are included. With this, a function of a nonvolatile semiconductor device can be ensured and a variation in a threshold voltage of a floating gate can be suppressed. | 02-25-2010 |
20100025739 | SEMICONDUCTOR DEVICE WITH LARGE BLOCKING VOLTAGE AND METHOD OF MANUFACTURING THE SAME - A normally-off type junction FET in which a channel resistance is reduced without lowering its blocking voltage is provided. In a junction FET formed with using a substrate made of silicon carbide, an impurity concentration of a channel region (second epitaxial layer) is made higher than an impurity concentration of a first epitaxial layer to be a drift layer. The channel region is formed of a first region in which a channel width is constant and a second region below the first region in which the channel width becomes wider toward the drain (substrate) side. A boundary between the first epitaxial layer and the second epitaxial layer is positioned in the second region in which the channel width becomes wider toward the drain (substrate) side. | 02-04-2010 |
20100019835 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A semiconductor integrated circuit device which substantially reduces drop in a supply voltage generated by a regulator and ensures stable supply of a supply voltage with high efficiency and high accuracy. In the device, a memory power supply includes a plurality of transistors and an error amplifier. In the transistors, source pads and drain pads are alternately arranged in a row along one edge of a semiconductor chip in a peripheral area of the chip. Transistor gates are formed in parallel with the alternately arranged source pads and drain pads (so that the longitudinal direction of the gates is parallel to the direction of the arrangement of the source pads and drain pads). Consequently, the length of wirings coupled to drains and sources is shortened and the sheet resistance is decreased. | 01-28-2010 |
20100017636 | POWER SUPPLY SYSTEM - In a power supply system having: a processor | 01-21-2010 |
20100015755 | MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE - In a step of forming an InGeSbTe film which contains GeSbTe made of germanium (Ge), antimony (Sb) and tellurium (Te) as its base material and to which indium (In) is added, an InGeSbTe film is formed by sputtering on a semiconductor substrate while keeping a temperature of the semiconductor substrate between an in-situ crystallization temperature of GeSbTe serving as the base material and an in-situ crystallization temperature of InGeSbTe. As a result, it is possible to suppress the failure that the phase separation occurs in the InGeSbTe film during the following manufacturing process. | 01-21-2010 |
20100014355 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - In a nonvolatile memory cell, a selection transistor is connected to a memory cell transistor in series. The selection transistor is formed into a double layer gate structure, and has a voltage of each gate driven individually and separately. Using capacitive coupling between these stacked gate electrode layers of the selection transistor, a gate potential of the selection transistor is set to the predetermined voltage level. An absolute value of the voltage level generated by a voltage generator to the gates of the selection transistor can be made small, so that current consumption can be reduced and an layout area of the voltage generator can be reduced. Thus, a nonvolatile semiconductor memory device with a low current consumption and a small chip layout area is provided. | 01-21-2010 |
20100013818 | ELECTRONIC PAPER DISPLAY, SEMICONDUCTOR INTEGRATED CIRCUIT AND OPERATING METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT - The present invention is directed to reduce power consumption in a standby operation period as a period of holding display in a no-power state. An electronic paper display has an electronic paper display panel, a display driver/controller, a battery, and a booster power source circuit. The display panel can display data by writing display data and, after that, can hold the display in a no-power state. The booster power source circuit generates a boosted power source voltage by an operation of boosting power source voltage from the battery, and the display driver/controller executes the writing of the displayed data to the display panel by using the boosted power source voltage. In the following standby operation period in which the display panel holds the display in the no-power state, the boosting operation of the booster power source circuit is stopped. | 01-21-2010 |
20100013568 | SEMICONDUCTOR DEVICE, RF-IC AND MANUFACTURING METHOD OF THE SAME - Provided is a technology capable of reducing parasitic capacitance of a capacitor while reducing the space occupied by the capacitor. A stacked structure is obtained by forming, over a capacitor composed of a lower electrode, a capacitor insulating film and an intermediate electrode, another capacitor composed of the intermediate electrode, another capacitor insulating film and an upper electrode. Since the intermediate electrode has a step difference, each of the distance between the intermediate electrode and lower electrode and the distance between the intermediate electrode and upper electrode in a region other than the capacitor formation region becomes greater than that in the capacitor formation region. For example, the lower electrode is brought into direct contact with the capacitor insulating film in the capacitor formation region, while the lower electrode is not brought into direct contact with the capacitor insulating film in the region other than the capacitor formation region. | 01-21-2010 |
20100009532 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS THEREFOR - Provided is a manufacturing method for improving the reliability of a semiconductor device having a back electrode. After formation of semiconductor elements on the surface of a silicon substrate, the backside surface thereof, which is opposite to the element formation surface, is subjected to the following steps in a processing apparatus. After deposition of a first metal film over the backside surface of the silicon substrate in a first chamber, it is heat treated to form a metal silicide film. Then, a nickel film is deposited in a third chamber, followed by deposition of an antioxidant conductor film in a second chamber. Heat treatment for alloying the first metal film and the silicon substrate is performed at least prior to the deposition of the nickel film. The first chamber has therefore a mechanism for depositing the first metal film and a lamp heating mechanism. | 01-14-2010 |
20100005647 | METHOD OF MANUFACTURING AN INLET MEMBER FOR AN ELECTRONIC TAG - In order to offer the technology which can form the pattern of the antenna of the inlet for electronic tags accurately and cheaply, the resist layer at the time of forming the pattern of an antenna by chemical etching is formed using a photogravure printing machine. Let the extending direction of region 16C which has the minimum width in the height of the front surface of a gravure plate be an opposite direction to the direction of rotation of a gravure plate (a doctor's relative direction of movement seen from the gravure plate). The radius of curvature of an inner circumference of the curved part in region 16B is made larger than the radius of curvature of a periphery. The outer edge of region 16D is formed so that it may become forward tapered shape-like toward position D, so that the width of region 16D may become larger than the width of region 16C in position D which the end of height attains. | 01-14-2010 |
20100002528 | SEMICONDUCTOR DEVICE - A sense amplifier section comprises two stages of latch-type sense amplifier circuits, i.e., a primary-stage latch-type sense amplifier and a secondary-stage latch-type sense amplifier, wherein stress exerted on the primary-stage latch-type sense amplifier is reduced significantly to ensure high accuracy in amplification. In the above configuration including the secondary-stage latch-type sense amplifier, when an amplified output from the primary-stage latch-type sense amplifier reaches a predetermined voltage level (e.g., 50 mV), a transition to amplifying operation of the secondary-stage latch-type sense amplifier is enabled so that a time duration of operation of the primary-stage latch-type sense amplifier (corresponding to a time duration of stress exertion on the primary-stage latch-type sense amplifier) can be shortened significantly. Further, by providing a clamp circuit in the primary-stage latch-type sense amplifier, it is possible to decrease a stress voltage itself to be applied to the primary-stage latch-type sense amplifier. | 01-07-2010 |
20090323400 | SEMICONDUCTOR DEVICE - There is provided a technique for ensuring both an SNM and a write margin simultaneously in a semiconductor device having static memory cells. A semiconductor device has a plurality of static memory cells. The semiconductor device includes a memory cell array having the static memory cells arranged in a matrix, a temperature sensor circuit for sensing a temperature in the semiconductor device, and a word driver for controlling a voltage supplied to a word line of the memory cell array based on an output of the temperature sensor circuit at the time of writing to or reading from a memory cell. | 12-31-2009 |
20090323398 | SEMICONDUCTOR MEMORY DEVICE COMPRISING A PLURALITY OF STATIC MEMORY CELLS - A driver power supply circuit stepping down a power supply voltage is arranged at a power supply node of a word line driver. The driver power supply circuit includes a non-silicide resistance element of N+ doped polycrystalline silicon, and a pull-down circuit lowering a voltage level of the driver power supply node. The pull-down circuit includes a pull-down transistor having the same threshold voltage characteristics as a memory cell transistor pulling down a voltage level of the driver power supply node, and a gate control circuit adjusting at least a gate voltage of the pull-down transistor. The gate control circuit corrects the gate potential of the pull-down transistor in a manner linked to variations in threshold voltage of the memory cell transistor. | 12-31-2009 |
20090321848 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device according to the present invention includes the steps of introducing first impurities of a first conductivity type into a main surface of a semiconductor substrate | 12-31-2009 |
20090317948 | METHOD FOR MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A method is provided for manufacturing a QFN type semiconductor integrated circuit device using a multi-device lead frame having a tie bar for tying external end portions of plural leads, wherein sealing resin filled between an outer periphery of a mold cavity and the tie bar is removed by a laser and thereafter a surface treatment such as solder plating is performed. | 12-24-2009 |
20090316499 | Semiconductor memory device operational processing device and storage system - A thin film magnetic memory includes a size-variable Read Only Memory (ROM) region and a size-variable Random Access Memory (RAM) coupled to different ports for parallel access to the ports, respectively. A memory system allowing fast and efficient data transfer can be achieved. | 12-24-2009 |
20090310524 | RECEIVER AND RECEIVING METHOD OF THE RECEIVER - The receiver includes a low noise amplifier, a local signal generator, a first mixer, a second mixer, a first amplifier, a second amplifier, a first A/D converter, a second A/D converter, and a signal level detection unit. A detection signal from at least one terminal of the first A/D converter is supplied to an input terminal of the signal level detection unit, thereby generating a reception start signal from the output terminal. Before an RF reception signal is received, a first signal processing unit containing the first mixer, the first amplifier, and the first A/D converter is controlled to an active state, and a second signal processing unit containing the second mixer, the second amplifier, and the second A/D converter is controlled to a low power consumption state. After the RF reception signal is received, the second signal processing unit is controlled to the active state. | 12-17-2009 |
20090309218 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - When a through-hole electrode and a rear-surface wire are formed on a rear surface of a chip, a convex portion is formed on the rear surface of the chip due to a rear-surface wiring pad which is a part of the through-hole electrode and the rear-surface wire. This causes the air leakage when the chip is sucked, and therefore, the reduction of the sucking force of the chip occurs. A concave portion is formed in advance in a region where a rear-surface wiring pad and a rear-surface wire are formed. The rear-surface wiring pad and the rear-surface wire are provided inside the concave portion. Thus, a flatness of the rear surface of the chip is ensured by a convex portion caused by thicknesses of the rear-surface wiring pad and the rear-surface wire, so that the reduction of the sucking force does not occur when the chip is handled. | 12-17-2009 |
20090309213 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor chip is mounted on a heat sink disposed inside a through-hole of a wiring board, electrodes of the semiconductor chip and connecting terminals of the wiring board are connected by bonding wires, a sealing resin is formed to cover the semiconductor chip and the bonding wires, and solder balls are formed on the lower surface of the wiring board, thereby constituting the semiconductor device. The heat sink is thicker than the wiring board. The heat sink has a protruded portion protruding to outside from the side surface of the heat sink, the protruded portion is located on the upper surface of the wiring board outside the through-hole, and the lower surface of the protruded portion contacts to the upper surface of the wiring board. When the semiconductor device is manufactured, the heat sink is inserted from the upper surface side of the wiring board. | 12-17-2009 |
20090309210 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a technique capable of suppressing variations in the height of each solder ball where an NSMD is used as a structure for each land. Vias that extend through a wiring board are provided. Lands are formed at the back surface of the wiring board so as to be coupled directly to the vias respectively. The lands are respectively formed so as to be internally included in openings defined in a solder resist. Half balls are mounted over the lands respectively. Namely, the present invention has a feature in that the configuration of coupling between each of the lands and its corresponding via both formed at the back surface of the wiring board is taken as a land on via structure and a configuration form of each land is taken as an NSMD. | 12-17-2009 |
20090303264 | LIQUID CRYSTAL DRIVING DEVICE - A liquid crystal driving device includes a liquid crystal controller and specific color expansion circuits. The liquid crystal controller generates a liquid crystal drive signal to be supplied to a liquid crystal display panel in response to display data. The specific color expansion circuits generate an image output signal from a low-intensity image input signal corresponding to a specific color by intensifying a gradation using a specified factor. The specific color expansion circuits generate an image output signal from a high-intensity image input signal corresponding to a specific color by intensifying a gradation using another small factor. The image output signal is appropriately intensified by the specific color expansion circuits and is supplied as display data to the liquid crystal controller. | 12-10-2009 |
20090299512 | SEMICONDUCTOR MANUFACTURING SYSTEM AND METHOD - In the manufacturing system and the manufacturing method of a semiconductor device using a plasma treatment apparatus, a plasma treatment condition is controlled so that a desired shape is obtained after the plasma processing by using a processing shape prediction model for calculating the shape after the plasma processing from the inspection data of a wafer to be treated prior to the treatment and a response surface model for calculating the processing shape depending on a plasma treatment condition. In this configuration, the processing shape prediction model has an adjustable prediction model coefficient, and this prediction model coefficient is automatically calibrated. | 12-03-2009 |
20090297053 | IMAGE ENCODING DEVICE AND IMAGE ENCODING METHOD - The invention aims at reducing the circuit size while maintaining the creation of a predictive image suitable for the intra prediction based on a pipeline processing. The encoding device operable to perform intra prediction in blocks of pixels resulting from division of a frame of a moving image has a pseudo-local-decode-image-creation module for simply encoding an original image, and an intra prediction module for using the created pseudo local decode image to select an intra prediction mode. In the intra prediction based on pipeline processing, the pipeline stage for selecting an intra prediction mode and the pipeline stage for creating predictive image data according to the selected intra prediction mode are separated. | 12-03-2009 |
20090294978 | SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR - To provide a semiconductor device with improved reliability. The semiconductor device includes a wiring board, a microcomputer chip flip-chip bonded over the wiring board via gold bumps, a first memory chip laminated over the microcomputer chip, wires for coupling the first memory chip to the wiring board, an underfill material with which a flip-chip coupling portion of the microcomputer chip is filled, and a sealing member for sealing the microcomputer chip and the first memory chip with resin. Further, the corner of a second opening portion of a solder resist film of the wiring board corresponding to the corner of the chip on the air vent side in charging the underfill material is made close to the microcomputer chip, which can improve the wettability and spread of the underfill material at the second opening portion, thus reducing the exposure of leads to the second opening portion, thereby improving the reliability of the semiconductor device. | 12-03-2009 |
20090294827 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor memory device includes: a semiconductor substrate; a first impurity region; a second impurity region; a channel region; a first gate formed on a main surface on a side of the first impurity region; a second gate formed on the main surface on a side of the second impurity region, with a second insulating film being interposed; and a third insulating film formed on a side surface of the first gate. An interface between the third insulating film and the semiconductor substrate directly under the third insulating film is located above an interface between the second insulating film and the main surface of the semiconductor substrate directly under the second insulating film. The total number of steps can thus be reduced, and lower cost is achieved. | 12-03-2009 |
20090291537 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device, including the steps of preparing a silicon substrate which has a main surface whose plane direction is a surface (100); forming an n channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) which has a gate electrode, a source region, a drain region and a channel whose channel length direction is parallel to a crystal orientation <100> of the silicon substrate; and forming NiSi over the gate electrode and NiSi | 11-26-2009 |
20090291529 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device manufacturing method comprising the steps of providing a matrix substrate having a main surface with plural device areas formed thereon, fixing plural semiconductor chips to the plural device areas respectively, then sealing the plural semiconductor chips all together with resin to form a block sealing member, dividing the block sealing member and the matrix substrate for each of the device areas by dicing, thereafter rubbing a surface of each of the diced sealing member portions with a brush, then storing semiconductor devices formed by the dicing once into pockets respectively of a tray, and conveying the semiconductor devices each individually from the tray. Since the substrate dividing work after block molding is performed by dicing while vacuum-chucking the surface of the block sealing member, the substrate division can be done without imposing any stress on an external terminal mounting surface of the matrix substrate. | 11-26-2009 |
20090289965 | LIQUID CRYSTAL DRIVING DEVICE - A liquid crystal driving device is provided, which can reduce the problem of contrast lowering of the liquid crystal display screen due to the decrease of the driving current of LED, by the control which is performed in order to cope with the decrease of the maximum rated current of LED as a light source of the backlight at a high temperature. The liquid crystal driving device includes a liquid crystal driving circuit, a backlight control unit, and display data expansion circuits. The liquid crystal driving circuit generates a liquid crystal driving signal to be supplied to a liquid crystal display panel in response to display data. The backlight control unit reduces driving current of the light emitting diode as a light source of the backlight module to illuminate the liquid crystal display panel, in response to the temperature rise of the liquid crystal display panel. The display data expansion circuit, in response to the temperature rise of the liquid crystal display panel, performs the data expansion of the display data, and compensates the contrast lowering of the liquid crystal display panel due to the dimming of the backlight module with the temperature rise of the liquid crystal display panel. | 11-26-2009 |
20090289717 | RADIO FREQUENCY (RF) POWER AMPLIFIER AND RF POWER AMPLIFIER APPARATUS - An RF power amplifier has a final-stage amplifier stage which generates an RF transmit output signal, a signal detector which detects an RF transmit output level, a first detector, a second detector and a control circuit. The final-stage amplifier stage includes a transistor and a load element and performs saturation type nonlinear amplification and non-saturation type linear amplification. The first detector and the control circuit maintain the RF transmit output signal approximately constant with respect to a variation in load at an antenna at the saturation type nonlinear amplification. The second detector and the control circuit reduce an increase in the output voltage of the final stage transistor with respect to an overload state of the antenna at the non-saturation type linear amplification. | 11-26-2009 |
20090289373 | Semiconductor device - The present invention provides a semiconductor device capable of preventing occurrence of cracking and the like, taking a large area, where wiring and the like that function as elemental devices can be arranged, within a plurality of interlayer insulation films, and reducing production cost. The semiconductor device according to the present invention has a low dielectric constant film having a dielectric constant of not less than 2.7. In the low dielectric constant film and the like, materials (e.g., a first dummy pattern, a second dummy pattern) with a larger hardness than that of the low dielectric constant film are formed at a part under a pad part. | 11-26-2009 |
20090286354 | SEMICONDUCTOR CHIP HAVING GETTERING LAYER, AND METHOD FOR MANUFACTURING THE SAME - In a semiconductor chip A wherein an element layer | 11-19-2009 |
20090286174 | MANUFACTURING METHOD AND MANUFACTURING SYSTEM OF SEMICONDUCTOR DEVICE - In an exposure process forming a predetermined circuit pattern of a semiconductor device on a wafer, a resist dimension of the resist pattern formed on a wafer and a focus position in the exposure process at past time are measured, a resist dimension and a focus position of a wafer to which the exposure process is secondly performed are estimated by using measurement results of these measured resist dimension and focus position, and a focus offset value is calculated by using estimated values of these estimated resist dimension and focus position, and then, an exposure dose is calculated as considering this focus offset value, and a resist pattern is formed on the wafer to which the exposure process is performed by using these calculated exposure dose and focus offset value. | 11-19-2009 |
20090283839 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SUBSTRATE - In order to provide a semiconductor device having a field effect transistor with a low power consumption and a high speed by use of the combination of Si and an element such as Ge, C or the like of the same group as Si, a strain is applied by a strain applying semiconductor layer 2 to a channel forming layer I having a channel of the field effect transistor formed therein so that the mobility of carriers in the channel is made larger than the mobility of carriers in that material of the channel forming layer which is unstrained. | 11-19-2009 |
20090275183 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A thermal oxidation method capable of obtaining a high oxidation rate by generating a sufficient enhanced-rate oxidation phenomenon even in a low temperature region is provided. In addition, a thermal oxidation method capable of forming a silicon oxide film having a high reliability even when formed at a low temperature region. A basic concept herein is to form a silicon oxide film by thermal reaction by generating a large amount of oxygen radicals (O*) having a large reactivity without using plasma. More specifically, ozone (O | 11-05-2009 |
20090268531 | Semiconductor memory device with adjustable selected work line potential under low voltage condition - A level shift element adjusting a voltage level at the time of selection of a word line according to fluctuations in threshold voltage of a memory cell transistor is arranged for each word line. This level shift element lowers a driver power supply voltage, and transmits the level-shifted voltage onto a selected word line. The level shift element can be replaced with a pull-down element for pulling down the word line voltage according to the threshold voltage level of the memory cell transistor. In either case, the selected word line voltage level can be adjusted according to the fluctuations in threshold voltage of the memory cell transistor without using another power supply system. Thus, the power supply circuitry is not complicated, and it is possible to achieve a semiconductor memory device that can stably read and write data even with a low power supply voltage. | 10-29-2009 |
20090263963 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - In a semiconductor having a multilayer wiring structure device on a semiconductor substrate, the multilayer wiring structure includes an interlayer insulating film having at least an organic siloxane insulating film. The organic siloxane insulating film has a relative dielectric constant of 3.1 or less, a hardness of 2.7 GPa or more, and a ratio of carbon atoms to silicon atoms between 0.5 and 1.0, inclusive. Further, the multilayer wiring structure may include an insulating layer having a ratio of carbon atoms to silicon atoms not greater than 0.1, the insulating layer being formed on the top surface of the organic siloxane insulating film as a result of carbon leaving the organic siloxane insulating film. | 10-22-2009 |
20090263945 | MANUFACTURING METHOD OF CMOS TYPE SEMICONDUCTOR DEVICE, AND CMOS TYPE SEMICONDUCTOR DEVICE - The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered. The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film. | 10-22-2009 |
20090263940 | MOLDING CLEANING SHEET AND METHOD OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME - A cleaning sheet ( | 10-22-2009 |
20090262581 | NON VOLATILE MEMORY - An electrically programmable and erasable non-volatile semiconductor memory such as a flash memory is designed into a configuration in which, when a cutoff of the power supply occurs in the course of a write or erase operation carried out on a memory cell employed in the non-volatile semiconductor memory, the operation currently being executed is discontinued and a write-back operation is carried out to change a threshold voltage of the memory cell in the reversed direction. In addition, the configuration also allows the number of charge-pump stages in an internal power-supply configuration to be changed in accordance with the level of a power-supply voltage so as to make the write-back operation correctly executable. As a result, no memory cells are put in deplete state even in the event of a power-supply cutoff in the course of a write or erase operation. | 10-22-2009 |
20090262575 | THIN FILM MAGNETIC MEMORY DEVICE CAPABLE OF CONDUCTING STABLE DATA READ AND WRITE OPERATIONS - A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provided between the fixed and free magnetic layers in a tunnel junction region. In the free magnetic layer, a region corresponding to an easy axis region having characteristics desirable as a memory cell is used as the tunnel junction region. A hard axis region having characteristics undesirable as a memory cell is not used as a portion of the tunnel magnetic resistive element. | 10-22-2009 |
20090258626 | FILTER CIRCUIT AND RECEIVING APPARATUS - A filter circuit includes first capacitors, second capacitors capable of altering a cutoff frequency by being connected in parallel with the first capacitors, first switches for connecting the second capacitors in parallel with the first capacitors, and charging circuits for the second capacitors. The charging circuits include second switches, and resistances for attenuating the amplitudes of input voltages to be fed to the second capacitors, by being connected in series with the second capacitors. The second capacitors are charged through the resistances in a state where the first switches are turned OFF and where the second switches are turned ON. Thus, a DC offset which is ascribable to the cutoff frequency switching of a filter is reduced. | 10-15-2009 |
20090253235 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH OFFSET SIDEWALL STRUCTURE - A method of manufacturing a semiconductor device with NMOS and PMOS transistors is provided. The semiconductor device can lessen a short channel effect, can reduce gate-drain current leakage, and can reduce parasitic capacitance due to gate overlaps, thereby inhibiting a reduction in the operating speed of circuits. An N-type impurity such as arsenic is ion implanted to a relatively low concentration in the surface of a silicon substrate ( | 10-08-2009 |
20090251965 | NONVOLATILE MEMORY DEVICE INCLUDING CIRCUIT FORMED OF THIN FILM TRANSISTORS - A transistor is arranged for electrically isolating a sense amplifier formed of a thin film transistor from a data line electrically coupled to the sense amplifier. When a write driver drives the data line, a control signal is applied to isolate the data line from the sense amplifier. | 10-08-2009 |
20090250788 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction, a plurality of second interconnections each adjacent to the first interconnection located at an edge of the capacitance forming region, extending in the predetermined direction, and having a fixed potential; and an insulating layer formed on the main surface and filling in between each of the first interconnections and between the first interconnection and the second interconnection adjacent to each other. The first interconnections and the second interconnections are located at substantially equal intervals in a plane parallel to the main surface, and located to align in a direction substantially perpendicular to the predetermined direction. | 10-08-2009 |
20090245004 | SEMICONDUCTOR DEVICE INCLUDING MULTI-CHIP - In order to implement a memory having a large storage capacity and a reduced data retention current, a non-volatile memory, an SRAM, a DRAM, and a control circuit are modularized into one package. The control circuit conducts assignment of addresses to the SRAM and DRAM, and stores data that must be retained over a long period of time in the SRAM. In the DRAM, a plurality of banks are divided into two sets, and mapped to the same address space, and sets are refreshed alternately. A plurality of chips of them are stacked and disposed, and wired by using the BGA and chip-to-chip bonding. | 10-01-2009 |
20090231913 | SEMICONDUCTOR DEVICE - There is provided a technique capable of improving speed of a set operation, which controls writing rate in a semiconductor device including a memory cell using a phase-change material. The technique uses means for setting a set-pulse voltage to be applied to the phase-change material to have two steps: the first-step voltage sets a temperature of the phase-change memory to a temperature at which the fastest nucleation is obtained; and the second pulse sets the temperature to a temperature at which the fastest crystal growth is obtained, thereby obtaining solid-phase growth of the phase-change material without melting. Moreover, the technique uses means for controlling the two-step voltage applied to the phase-change memory by a two-step voltage applied to a word line capable of reducing the drain current variation. | 09-17-2009 |
20090230551 | SEMICONDUCTOR DEVICE - The reliability of a semiconductor device which has the semiconductor components which were mounted on the same surface of the same substrate via the bump electrodes with which height differs, and with which package structure differs is improved. | 09-17-2009 |
20090230448 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF - In a semiconductor integrated circuit device, testing pads ( | 09-17-2009 |