RENESAS ELECTRONIC CORPORATION Patent applications |
Patent application number | Title | Published |
20130194010 | SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF OPERATING SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit includes a logic circuit having a plurality of operation modes, a power source circuit that generates a power source voltage to be supplied to the logic circuit, a power source wiring that couples the power source circuit and the logic circuit, and a charge control block that holds charges for controlling the voltage of the power source wiring. The power source circuit generates a first power source voltage for causing the logic circuit to operate in a computing mode and a second power source voltage for causing the logic circuit to operate in a sleep mode. The charge control block includes a capacitor, a first switch, and a voltage supply unit that supplies the second power source voltage or a third power source voltage lower than the second power source voltage, to the capacitor. | 08-01-2013 |
20120329223 | SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SAME - In a semiconductor storage device a select gate electrode is arranged into a ring shape so as to surround the second impurity regions, and is electrically connected to a word line. A first control gate electrode is arranged into a ring shape on the outer peripheral side of the select gate electrode, and a second control gate electrode is arranged into a ring shape on the inner peripheral side of the select gate electrode. A pair of first and second bit lines corresponding to every row are placed on the memory cells of the device, a first bit line is electrically connected to one of first impurity regions that are adjacent along the row direction, and a second bit line is electrically connected to the other of the first impurity regions that are adjacent along the row direction. | 12-27-2012 |
20120326907 | D/A CONVERTER INCLUDING HIGHER-ORDER RESISTOR STRING - A resistor string digital-to-analog converter includes an input terminal receiving a digital input signal in digital code, an output terminal revealing an analog output signal in analog voltage, a first plurality of voltage-acquisition nodes including a first pair of nodes which is adjacent to each other, a first plurality of resistors being connected in series via the first plurality of voltage-acquisition nodes, a second pair of nodes revealing a pair of analog voltages, a high-order voltage-acquisition circuit providing conduction between a respective one of the first pair of nodes and a respective one of the second pair of nodes in accordance with the digital input signal, a low-order converter generating the analog output signal, which is obtained by interpolating one and the other of the pair of analog voltages in accordance with the digital input signal. | 12-27-2012 |
20120015495 | SEMICONDUCTOR DEVICE INCLUDING MIM ELEMENT AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device includes forming a first insulating film above a semiconductor substrate, forming a wiring to be buried in the first insulating film, forming a protruding portion in an upper surface of the wiring, forming a second insulating film above the first insulating film and the wiring including the protruding portion, planarizing a surface of the second insulating film, forming a third insulating film on the second insulating film whose surface is planarized, forming a lower electrode on the third insulating film, forming a capacitor insulating film on the lower electrode, and forming an upper electrode on the capacitor insulating film. | 01-19-2012 |
20110198726 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An N− layer is formed on a semiconductor substrate, with a BOX layer interposed. In the N− layer, a trench isolation region is formed to surround the N− layer to be an element forming region. The trench isolation region is formed to reach the BOX layer, from the surface of the N− layer. Between trench isolation region and the N− layer, a P type diffusion region | 08-18-2011 |