| Ramtron International Corporation Patent applications |
| Patent application number | Title | Published |
|---|
| 20120007723 | INTERRUPT GENERATION AND ACKNOWLEDGMENT FOR RFID - A memory circuit includes a memory, a memory access control circuit coupled to the memory, an RFID interface coupled to the memory access control circuit, a secondary interface coupled to the memory access control circuit, and an interrupt manager coupled to the memory access control circuit, the RFID interface, and the secondary interface. | 01-12-2012 |
| 20120007722 | RFID ACCESS METHOD USING AN INDIRECT MEMORY POINTER - A method of operating a memory in an RFID application includes locating a memory pointer at a fixed read/writeable memory location in the memory, determining a range of a pedigree buffer, initializing the memory pointer to a lowest value in the range, providing a second memory location that serves as a trigger address for an indirect write, and writing to a next location in the pedigree buffer by directing write data to the trigger address, which is then automatically written at a location pointed to by the memory pointer. | 01-12-2012 |
| 20120007721 | FAST BLOCK WRITE USING AN INDIRECT MEMORY POINTER - A fast block write command includes providing an RFID tag having a memory, and using a stored address pointer to point to a known address in the memory, wherein the stored address pointer points to a starting address at a known safe block in the memory. The method is performed without an intermediate buffer. The received data is written to the known safe block and a cyclic redundancy check is computed on the received data. If the cyclic redundancy check matches, the received data is retained and the stored address pointer is updated. If the cyclic redundancy check does not match, the stored address pointer is kept for a future write operation. Further block writes can be disallowed after an initial successful block write. | 01-12-2012 |
| 20120007720 | LOW POWER, LOW PIN COUNT INTERFACE FOR AN RFID TRANSPONDER - A serial interface includes a select node, a clock node, a first bidirectional data port, a second bidirectional data port, and shift register circuitry coupled to both data ports such that a leading edge and a falling edge of a clock signal associated with the clock node are used to shift or transfer data. | 01-12-2012 |
| 20100246238 | METHOD FOR MITIGATING IMPRINT IN A FERROELECTRIC MEMORY - An array of ferroelectric memory cells that allows imprint mitigation includes ferroelectric memory cells respectively coupled to word lines, plate lines, and bit lines; a word line driver for driving the word lines; a plate line driver for driving the plate lines; a bit line driver for driving the bit lines; and an isolation device driver for driving isolation devices coupled between the bit lines and a plurality of bit lines. The method for mitigating imprint includes coupling the bit lines to a respective plurality of sense amplifiers, turning on a word line and pulsing a plate line associated with a row of ferroelectric memory cells, disconnecting the bit lines from the respective sense amplifiers, driving the plate line low and the bit lines high, driving the plate line high and the bit lines low, driving the plate line low and floating the bit lines, driving the bit lines with the sense amplifier, and turning off the word line and precharging the bit lines. The method can be performed after each memory access, or can be performed whenever convenient with a counter and a rejuvenate command. | 09-30-2010 |
| 20090108887 | FAST POWER-ON DETECT CIRCUIT WITH ACCURATE TRIP-POINTS - A power-on reset circuit includes a first PNP transistor having an emitter, a base, and a collector coupled to ground; a second PNP transistor having an emitter coupled to the base of the first transistor, and a base and collector coupled to ground; a third PNP transistor having an emitter, a base coupled to the base of the first transistor, and a collector coupled to ground; a first resistor coupled between VDD and an internal node; a second resistor coupled between VDD and the emitter of the first transistor; a third resistor coupled between the internal node and the emitter of the third transistor; and a comparator having a first input coupled to the internal node and a second input coupled to the emitter of the first transistor for generating a power-on reset signal. | 04-30-2009 |
| 20090103348 | 2T/2C FERROELECTIC RANDOM ACCESS MEMORY WITH COMPLEMENTARY BIT-LINE LOADS - The signal margin of a small array 2T/2C memory is increased by writing the ferroelectric load capacitors on the bit lines to complementary states. A ferroelectric memory array includes rows and columns of 2T/2C memory cells, wherein each column of the memory array includes a first memory subcell having a first node coupled to a word line, a second node coupled to a first bit line, and a third node coupled to a first plate line, the first memory cell being poled in a first direction; a second memory subcell having a first node coupled to the word line, a second node coupled to a second bit line, and a third node coupled to the first plate line, the second memory cell being poled in a second direction; a first load subcell having a first node coupled to the word line, a second node coupled to the first bit line, and a third node coupled to a second plate line, the first load cell being poled in the first direction; and a second load subcell having a first node coupled to the word line, a second node coupled to a second bit line, and a third node coupled to the second plate line, the second load cell being poled in the second direction. | 04-23-2009 |
