RAMGOSS, INC. Patent applications |
Patent application number | Title | Published |
20130181215 | ROTATED CHANNEL SEMICONDUCTOR FIELD EFFECT TRANSISTOR - A transistor device, such as a rotated channel metal oxide/insulator field effect transistor (RC-MO(I)SFET), includes a substrate including a non-polar or semi-polar wide band gap substrate material such as an Al | 07-18-2013 |
20130043468 | VERTICAL FIELD EFFECT TRANSISTOR ON OXIDE SEMICONDUCTOR SUBSTRATE - A transistor, such as a vertical metal field effect transistor, can include a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate comprising of AlGaN-based materials and electrodes disposed on the second side of the substrate. The transistor can also include a plurality of semiconductor layers and a dielectric layer disposed between the plurality of semiconductor layers and electrode materials. | 02-21-2013 |