QUALCOMM MEMS Technolgies, Inc. Patent applications |
Patent application number | Title | Published |
20130082980 | OPTICAL TOUCH DEVICE WITH PIXILATED LIGHT-TURNING FEATURES - This disclosure provides systems, methods and apparatus for a touch screens configured to determine a position of a touch event by selectively redirecting light to correlated locations on a light sensor. In one aspect, the touch screen apparatus can include a light guide forming a touch interface, a light source for injecting light into the light guide, a light sensor for detecting the injected light, and a pixilated light-turning layer. The pixilated light-turning layer can include a plurality of light-turning features forming pixels. The pixels can receive incident light corresponding to the emitted light scattered by an object contacting the light guide. The pixels can redirect the incident scattered light towards the light sensor such that light selectively propagates to one or more correlated light receiving locations. A processor can map the light receiving location to an area contacted by the object, thereby determining a position of a touch event. | 04-04-2013 |
20100320555 | CONTROLLING ELECTROMECHANICAL BEHAVIOR OF STRUCTURES WITHIN A MICROELECTROMECHANICAL SYSTEMS DEVICE - In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by at least reducing charge build up thereon during activation of the microelectromechanical systems device. | 12-23-2010 |
20090201033 | METHODS FOR MEASUREMENT AND CHARACTERIZATION OF INTERFEROMETRIC MODULATORS - Various methods are described to characterize interferometric modulators or similar devices. Measured voltages across interferometric modulators may be used to characterize transition voltages of the interferometric modulators. Measured currents may be analyzed by integration of measured current to provide an indication of a dynamic response of the interferometric modulator. Frequency analysis may be used to provide an indication of a hysteresis window of the interferometric modulator or mechanical properties of the interferometric modulator. Capacitance may be determined through signal correlation, and spread-spectrum analysis may be used to minimize the effect of noise or interference on measurements of various interferometric modulator parameters. | 08-13-2009 |