QINGDAO JASON ELECTRIC CO. LTD. Patent applications |
Patent application number | Title | Published |
20150263224 | LIGHT-EMITTING DEVICE WITH HEAVILY DOPED ACTIVE-REGION AND METHOD FOR MANUFACTURING THE SAME - A light emitting device is provided, which includes an n-type layer, a p-type layer, and an active region sandwiched between the n-type layer and the p-type layer. The active-region includes one or more quantum wells each sandwiched by quantum barriers, at least one of the quantum wells has a polarization induced electric field equal to or greater than 10 | 09-17-2015 |
20150041755 | LIGHT-EMITTING DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY - A light emitting device with improved light extraction efficiency includes an n-type layer, a p-type layer, an active region sandwiched between the n-type layer and the p-type layer, a characteristic AlGaN layer over which the n-type layer is formed, and an AlN layer on which the characteristic AlGaN layer is formed. The characteristic AlGaN layer has gradually enlarging bandgap width from that of the n-type layer to that of the AlN layer in the direction pointing from the n-type layer to the AlN layer. The light-emitting device may further include a nanoporous AlN layer over which the AlN layer is formed. | 02-12-2015 |
20140332754 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention presents a solid-state semiconductor light emitting device with reduced forward voltage and improved quantum efficiency. The light emitting device is characterized by its multiple-quantum-well active-region with opposite composition grading in the quantum barriers and quantum wells along the device epitaxy direction. | 11-13-2014 |
20130104579 | Refrigerator with Ultraviolet Light Emitting Diode | 05-02-2013 |