| PRIMESTAR SOLAR, INC. Patent applications |
| Patent application number | Title | Published |
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| 20120064658 | Entrance and Exit Roll Seal Configuration for a Vapor Deposition System - An apparatus is provided for vapor deposition of a sublimated source material as a thin film on discrete photovoltaic (PV) module substrates conveyed in a continuous non-stop manner through said apparatus. The apparatus includes a vapor deposition head configured for receipt and sublimation of a source material, and for distributing the sublimated source material onto an upper surface of substrates conveyed through a deposition area. A roll seal configuration is provided at each of an entry slot and an exit slot for the substrates conveyed through the apparatus. The roll seal configuration further includes a cylinder rotatably supported at a defined gap height above a conveyance plane of the substrates such that the cylinder is not in continuous rolling contact with the substrates within the window of finished active semiconductor material. The cylinder is floatable in a vertical direction relative to the conveyance plane of the substrates such that the cylinder rolls up and over surface variations in the substrates that exceed the gap height as the substrates are conveyed under the cylinder. | 03-15-2012 |
| 20120064657 | DYNAMIC SYSTEM FOR VARIABLE HEATING OR COOLING OF LINEARLY CONVEYED SUBSTRATES - A system is provided for heating or cooling discrete, linearly conveyed substrates having a gap between a trailing edge of a first substrate and a leading edge of a following substrate in a conveyance direction. The system includes a chamber, and a conveyor operably configured within the chamber to move the substrates through at a conveyance rate. A plurality of individually controlled temperature control units, for example heating or cooling units, are disposed linearly within the chamber along the conveyance direction. A controller is in communication with the temperature control units and is configured to cycle output of the temperature control units from a steady-state temperature output as a function of the spatial position of the conveyed substrates within the chamber relative to the temperature control units so as to decrease temperature variances in the substrates caused by movement of the substrates through the chamber. | 03-15-2012 |
| 20120063485 | THERMAL ENDURANCE TESTING APPARATUS AND METHODS FOR PHOTOVOLTAIC MODULES - Apparatus and methods for testing the thermal endurance of a glass substrate of a photovoltaic module are provided. The apparatus generally includes, in one embodiment, a testing chamber defining an interior space having an interior atmosphere. A refrigeration unit is operably positioned with the testing chamber to control the interior atmosphere's temperature. A mounting system is positioned within the interior space of the testing chamber and configured to hold the photovoltaic module while exposing the glass substrate of the photovoltaic module. An edge cooling system is positioned in relation to the mounting system such that the photovoltaic module held by the mounting system has a first side edge in contact with the edge cooling system. A light system is also positioned within the interior space of the testing chamber to illuminate the glass substrate of the photovoltaic module. | 03-15-2012 |
| 20120061238 | SPUTTERING CATHODE HAVING A NON-BONDED SEMICONDUCTING TARGET - A sputtering cathode is generally provided. The sputtering cathode can include a semiconducting target (e.g., a cadmium sulfide target, a cadmium tin oxide target, etc.) defining a sputtering surface and a back surface opposite to the sputtering surface. A backing plate can be positioned facing the back surface of the target and non-bonded to the back surface of the target. A non-bonding attachment mechanism can removably hold the target within the sputtering cathode such that the back surface is facing the backing plate during sputtering. | 03-15-2012 |
| 20120061235 | MIXED SPUTTERING TARGET OF CADMIUM SULFIDE AND CADMIUM TELLURIDE AND METHODS OF THEIR USE - Mixed targets are generally disclosed for sputtering an intermixed layer of cadmium sulfide and cadmium telluride. The mixed target can include cadmium sulfide, and cadmium telluride. Methods of forming the mixed target are also provided. For example, a powdered blend can be formed from powdered cadmium sulfide and powdered cadmium telluride, and pressed into a mixed target Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer. For example, a mixed target of cadmium sulfide and cadmium telluride can be sputtered directly on a cadmium sulfide layer to form an intermixed layer, and a cadmium telluride layer can be formed on the intermixed layer. | 03-15-2012 |
| 20120060758 | DYNAMIC SYSTEM FOR VARIABLE HEATING OR COOLING OF LINEARLY CONVEYED SUBSTRATES - A system is provided for heating or cooling discrete, linearly conveyed substrates having a gap between a trailing edge of a first substrate and a leading edge of a following substrate in a conveyance direction. The system includes a chamber, and a conveyor operably configured within the chamber to move the substrates through at a conveyance rate. A plurality of individually controlled temperature control units, for example heating or cooling units, are disposed linearly within the chamber along the conveyance direction. A controller is in communication with each of the temperature control units to sequentially cycle output of the units from a steady-state temperature output along the conveyance direction as a function of position of the leading and trailing edges of the substrates within the chamber relative to the temperature control units so as to reduce edge-induced temperature variances in the substrates. | 03-15-2012 |
| 20120045374 | SYSTEM FOR RECOVERY OF CADMIUM TELLURIDE (CdTe) FROM SYSTEM COMPONENTS USED IN THE MANUFACTURE OF PHOTOVOLTAIC (PV) MODULES - A system and associated process are provided for recovering cadmium telluride (CdTe) that has plated onto components, such as components used in the manufacture of photovoltaic (PV) modules. The system includes a vacuum oven configured for maintaining a vacuum and being heated to a temperature effective for sublimating CdTe off of components placed within the oven. A collection member is disposed so that sublimated CdTe generated in the oven diffuses to the collection member. The collection member is maintained at a temperature effective for causing the sublimated CdTe to plate thereon. The collection member is subsequently processed to collect the plated CdTe. | 02-23-2012 |
| 20120042828 | SLIT VALVE FOR VACUUM CHAMBER MODULE - A slit valve assembly is configured for attachment to a vacuum chamber module to seal a slot opening in a wall of the module in a closed position and to provide access through the slot opening in an open position. The valve assembly includes a rotatable shaft driven by a rotary actuator between an open rotational position and a closed rotational position. An elongated seal plate seals against the module wall over the slot opening in the closed rotational position of the shaft. At least one arm member connects the seal plate with the shaft. The arm member rotates with the shaft and is pivotally attached to the seal plate. The seal plate is biased to an articulated position relative to the arm member. | 02-23-2012 |
| 20120028409 | METHODS OF FORMING AN ANISOTROPIC CONDUCTIVE LAYER AS A BACK CONTACT IN THIN FILM PHOTOVOLTAIC DEVICES - Thin film photovoltaic devices are generally provided. The device can include a transparent conductive oxide layer on a glass substrate, an n-type thin film layer on the transparent conductive layer, and a p-type thin film layer on the n-type layer. The n-type thin film layer and the p-type thin film layer form a p-n junction. An anisotropic conductive layer is applied on the p-type thin film layer, and includes a polymeric binder and a plurality of conductive particles. A metal contact layer can then be positioned on the anisotropic conductive layer. | 02-02-2012 |
| 20120028407 | MULTI-LAYER N-TYPE STACK FOR CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF MAKING - Thin film photovoltaic devices are provided that generally include a transparent conductive oxide layer on the glass, a multi-layer n-type stack on the transparent conductive oxide layer, and a cadmium telluride layer on the multi-layer n-type stack. The multi-layer n-type stack generally includes a first layer and a second layer, where the first layer comprises cadmium and sulfur and the second layer comprises cadmium and oxygen. The multi-layer n-type stack can, in certain embodiments, include additional layers (e.g., a third layer, a fourth layer, etc.). Methods are also generally provided for manufacturing such thin film photovoltaic devices. | 02-02-2012 |
| 20120028404 | METHODS OF TEMPORALLY VARYING THE LASER INTENSITY DURING SCRIBING A PHOTOVOLTAIC DEVICE - Methods for laser scribing a film stack including a plurality of thin film layers on a substrate are provided. A pulse of a laser beam is applied to the film stack, where the laser beam has a power that varies as a function of time during the pulse according to a predetermined power cycle. For example, the pulse can have a pulse lasting about 0.1 nanoseconds to about 500 nanoseconds. This pulse of the laser beam can be repeated across the film stack to form a scribe line through at least one of the thin film layers on the substrate. Such methods are particularly useful in laser scribing a cadmium telluride thin-film based photovoltaic device. | 02-02-2012 |
| 20120028395 | VAPOR DEPOSITION PROCESS FOR CONTINUOUS DEPOSITION AND TREATMENT OF A THIN FILM LAYER ON A SUBSTRATE - An integrated apparatus is provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic module substrate and subsequent vapor treatment. The apparatus can include a load vacuum chamber, a first vapor deposition chamber; and a second vapor deposition chamber that are integrally connected such that substrates being transported through the apparatus are kept at a system pressure less than about 760 Torr. A conveyor system can be operably disposed within the apparatus and configured for transporting substrates in a serial arrangement into and through load vacuum chamber, into and through the first vapor deposition chamber, and into and through the second vapor deposition chamber at a controlled speed. Processes are also provided for manufacturing a thin film cadmium telluride thin film photovoltaic device. | 02-02-2012 |
| 20120028393 | VAPOR DEPOSITION APPARATUS AND PROCESS FOR CONTINUOUS DEPOSITION OF A DOPED THIN FILM LAYER ON A SUBSTRATE - An apparatus and related process are provided for vapor deposition of a sublimated source material as a doped thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material supplied from a first feed tube. A second feed tube can provide a dopant material into the deposition head. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus to further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate. | 02-02-2012 |
| 20120027922 | TEMPORALLY VARIABLE DEPOSITION RATE OF CdTe IN APPARATUS AND PROCESS FOR CONTINUOUS DEPOSITION - Apparatus is generally provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic module substrate. The apparatus includes a distribution plate disposed below the distribution manifold and at a defined distance above a horizontal conveyance plane of an upper surface of a substrate conveyed through the apparatus. The distribution plate defines a pattern of passages therethrough configured to provide greater resistance to the flow of sublimated source vapors at a first longitudinal end than a second longitudinal end. A process for vapor deposition of a sublimated source material to form thin film on a photovoltaic module substrate is also provided via distributing the sublimated source material onto an upper surface of the substrates through a distribution plate positioned between the upper surface of the substrate and the receptacle. | 02-02-2012 |
| 20120027921 | VAPOR DEPOSITION APPARATUS AND PROCESS FOR CONTINUOUS DEPOSITION OF A THIN FILM LAYER ON A SUBSTRATE - An apparatus and process for vapor deposition of a sublimated source material as a thin film on a photovoltaic module substrate are provided. The apparatus includes at least one receptacle disposed in a deposition head. Each receptacle is configured for receipt of a granular source material. A heating system is configured to heat the receptacle(s) to sublimate the source material. A substantially vertical distribution plate is disposed between the receptacle(s) and a substrate conveyed through the apparatus. The distribution plate is positioned at a defined distance from a vertical conveyance plane of a deposition surface of the substrate. The distribution plate comprises a pattern of passages therethrough that distribute the sublimated source material for deposition onto the deposition surface of the substrate. | 02-02-2012 |
| 20120024830 | METHODS AND APPARATUS FOR REDUCING VARIATIONS IN THE LASER INTENSITY DURING SCRIBING A PHOTOVOLTAIC DEVICE - Methods are generally provided of reducing speckle of a laser beam from a laser source guided through an optical waveguide. The method includes vibrating an optical waveguide at a first point along the optical waveguide at a first frequency (e.g., having a range of about 20 kHz to about 20 GHz) for a certain distance (e.g., a distance of about 0.1 mm to about 5 cm), and directing the laser beam out of the optical waveguide from the laser source to a target. Such methods are particularly useful for scribing a thin film layer on a photovoltaic module (e.g., a cadmium telluride-based thin film photovoltaic device). Fiber optic laser systems are also generally provided for reducing speckle of a laser beam from a laser source guided through an optical waveguide. | 02-02-2012 |
| 20120024695 | SYSTEMS AND METHODS FOR HIGH-RATE DEPOSITION OF THIN FILM LAYERS ON PHOTOVOLTAIC MODULE SUBSTRATES - Apparatus and processes for sequential sputtering deposition of a target source material as a thin film on a photovoltaic module substrate are provided. The apparatus includes a first sputtering deposition chamber and a second sputtering deposition chamber that are integrally connected such that the substrates being transported through the apparatus are kept at a system pressure that is less than about 760 Torr. The load vacuum chamber is connected to a load vacuum pump configured to reduce the pressure within the load vacuum chamber to an initial load pressure. The first sputtering deposition chamber includes a first target, and the second sputtering deposition chamber includes a second target. A conveyor system is operably disposed within the apparatus and configured for transporting substrates in a serial arrangement into and through load vacuum chamber, into and through the first sputtering deposition chamber, and into and through the second sputtering deposition chamber at a controlled speed. | 02-02-2012 |
| 20120024692 | MIXED SPUTTERING TARGETS AND THEIR USE IN CADMIUM SULFIDE LAYERS OF CADMIUM TELLURIDE VASED THIN FILM PHOTOVOLTAIC DEVICES - Methods are generally provided of sputtering a cadmium sulfide layer on a substrate. The cadmium sulfide layer can be sputtered on a substrate from a mixed target including cadmium, sulfur, and oxygen. The cadmium sulfide layer can be used in methods of forming cadmium telluride thin film photovoltaic devices. | 02-02-2012 |
| 20120024380 | INTERMIXING OF CADMIUM SULFIDE LAYERS AND CADMIUM TELLURIDE LAYERS FOR THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE - Cadmium telluride thin film photovoltaic devices are generally disclosed including an intermixed layer of cadmium sulfide and cadmium telluride between a cadmium sulfide layer and a cadmium telluride layer. The intermixed layer generally has an increasing tellurium concentration and decreasing sulfur concentration extending in a direction from the cadmium sulfide layer towards the cadmium telluride layer. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer of cadmium sulfide and cadmium telluride. | 02-02-2012 |
| 20120024362 | REFRACTIVE INDEX MATCHING OF THIN FILM LAYERS FOR PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE - Thin film photovoltaic devices are generally provided. In one embodiment, the device includes a high index layer (e.g., having a refractive index of about 2 or more) on a glass substrate and a low index layer (e.g., having a refractive index of about 1.5 or less) on the high index layer. A transparent conductive oxide layer is positioned on the low index layer, and a photovoltaic heterojunction (e.g., a cadmium sulfide layer and a cadmium telluride layer) is positioned on the transparent conductive oxide layer. In an alternative embodiment, the device can include the low index layer on the glass substrate and the high index layer on the low index layer. Methods are also generally provided for manufacturing such thin film photovoltaic devices. | 02-02-2012 |
| 20120024361 | ANISOTROPIC CONDUCTIVE LAYER AS A BACK CONTACT IN THIN FILM PHOTOVOLTAIC DEVICES - Thin film photovoltaic devices are generally provided. The device can include a transparent conductive oxide layer on a glass substrate, an n-type thin film layer on the transparent conductive layer, and a p-type thin film layer on the n-type layer. The n-type thin film layer and the p-type thin film layer form a p-n junction. An anisotropic conductive layer is applied on the p-type thin film layer, and includes a polymeric binder and a plurality of conductive particles. A metal contact layer can then be positioned on the anisotropic conductive layer. | 02-02-2012 |
| 20120024233 | Conveyor Assembly with Releasable Drive Coupling - A module for a deposition system includes a drive unit mounted on an exterior wall of the module. The drive unit has a drive shaft that extends into the module and engages a conveyor operably disposed within the module for driving the conveyor in a conveying path. A releasable drive coupling is configured between the drive unit and a drive member of the conveyor. The drive coupling has a first end that releasably engages with the drive shaft and a second end that releasably engages the conveyor drive member. The drive coupling includes a torque member, and may also include at least one thermal shield spaced concentrically around the torque member and extending axially between the first and second ends. | 02-02-2012 |
| 20120021536 | METHOD AND SYSTEM FOR APPLICATION OF AN INSULATING DIELECTRIC MATERIAL TO PHOTOVOLTAIC MODULE SUBSTRATES - A method and related system are provided for depositing a dielectric material into voids in one or more of the semiconductor material layers of a photovoltaic (PV) module substrate. A first side of the substrate is exposed to a light source such that light is transmitted through the substrate and any voids in the semiconductor material layers on the opposite side of the substrate. The light transmitted through the voids is detected and a printer is registered to the pattern of detected light to print a dielectric material and fill the voids. | 01-26-2012 |
| 20120017965 | PHOTOVOLTAIC (PV) MODULE WITH IMPROVED BUS TAPE TO FOIL RIBBON CONTACT - A photovoltaic a substrate having a plurality of individual serially connected solar cells defined thereon. A bus tape is applied along respective ones of said cells at generally opposite longitudinal ends of the substrate for collecting the charge generated by the plurality of solar cells. A conductive member is interconnected between the bus tapes and is disposed beneath the bus tapes and in direct conductive contact with the respective cells. A junction box is configured for delivering the generated charge to an external load or other component, with the conductive member connected to the junction box. | 01-26-2012 |
| 20120003784 | METHODS OF FORMING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER FOR USE IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE - Methods for forming a conductive oxide layer on a substrate are provided. The method can include sputtering a transparent conductive oxide layer (“TCO layer”) on a substrate from a target (e.g., including cadmium stannate) at a sputtering temperature of about 10° C. to about 100° C. The TCO layer can then be annealed in an anneal temperature comprising cadmium at an annealing temperature of about 500° C. to about 700° C. The method of forming the TCO layer can be used in a method for manufacturing a cadmium telluride based thin film photovoltaic device, further including forming a cadmium sulfide layer over the transparent conductive oxide layer and forming a cadmium telluride layer over the cadmium sulfide layer. | 01-05-2012 |
| 20120003772 | APPARATUS AND METHODS OF FORMING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER FOR USE IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE - Methods for forming a TCO layer on a substrate are generally provided and include sputtering a TCO layer on a substrate from a target including cadmium stannate. A cap material (e.g., including cadmium) is deposited onto an outer surface of an indirect anneal system, and the TCO layer can be annealed at an anneal temperature while in contact with or within about 10 cm of the cap material. | 01-05-2012 |
| 20120000776 | SPUTTERING TARGETS INCLUDING EXCESS CADMIUM FOR FORMING A CADMIUM STANNATE LAYER - Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (e.g., including cadmium stannate) on a substrate from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature greater of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. | 01-05-2012 |
| 20120000768 | METHODS FOR SPUTTERING A RESISTIVE TRANSPARENT BUFFER THIN FILM FOR USE IN CADMIUM TELLURIDE BASED PHOTOVOLTAIC DEVICES - Methods for depositing a resistive transparent buffer thin film layer on a substrate are provided. The methods can include cold sputtering a resistive transparent buffer layer on a substrate (e.g., at a sputtering temperature of about 10° C. to about 100° C.) in a sputtering atmosphere comprising about 0.01% to about 5% by volume water vapor (e.g., about 0.05% to about 1% by volume water vapor). The resistive transparent buffer layer can then be annealed at an anneal temperature of about 450° C. to about 700° C. The methods of depositing a resistive transparent buffer thin film layer on a substrate can be used in a method of manufacturing a cadmium thin film photovoltaic device by forming cadmium sulfide layer on the resistive transparent buffer layer, and forming a cadmium telluride layer on the cadmium sulfide layer. | 01-05-2012 |
| 20120000767 | METHODS AND APPARATUS OF ARC PREVENTION DURING RF SPUTTERING OF A THIN FILM ON A SUBSTRATE - Methods of arc prevention during sputtering of a thin film from a semiconducting target onto a substrate are provided. An alternating current (e.g., having a frequency of about 500 kHz to 15 MHz) can be applied from an electrical power supply to the semiconducting target to form a plasma between the substrate and the semiconducting target. This alternating current can be temporarily interrupted for a time sufficient to sustain the plasma between the substrate and the semiconducting target to inhibit arc formation during sputtering. Sputtering systems are also generally provided for arc prevention during sputtering of a thin film from a semiconducting target onto a substrate. | 01-05-2012 |
| 20120000765 | METHODS OF ARC DETECTION AND SUPPRESSION DURING RF SPUTTERING OF A THIN FILM ON A SUBSTRATE - Methods and systems of arc suppression during RF sputtering of a thin film from a semiconducting target onto a substrate are provided. During sputtering, an alternating current of RF frequency can be applied to a semiconducting target to form a plasma. Upon formation of an arc extending from the target, an arc signature can be detected, where the arc signature is simultaneously defined by decreasing plasma voltage from an initial sputtering plasma voltage to an arc plasma voltage and increasing reflective power from an initial sputtering reflective power to an arc reflective power. Upon identification of the arc signature, the alternating current can be temporarily interrupted to the semiconducting target to suppress the arc extending from the target. Thereafter, the alternating current from the electrical power supply can be reapplied to the semiconducting target. | 01-05-2012 |
| 20120000426 | INTEGRATED GEARBOX AND ROTARY FEEDTHROUGH SYSTEM FOR A VACUUM CHAMBER STRUCTURE - A vacuum chamber structure includes a rotary feedthrough configured on a chamber wall to provide rotational drive to the interior of the structure. The rotary feedthrough includes a gearbox having a housing and a shaft rotationally supported by bearings contained within the housing. A motor is operably coupled to the gearbox housing to drive the shaft, which extends from the gearbox. A seal assembly is operably disposed between the gearbox housing and the chamber wall, with the shaft disposed through the seal assembly and extending through a bore in the chamber wall and into the interior of the structure. The shaft is rotationally supported with bearings only via the bearings in the gearbox housing. | 01-05-2012 |
| 20110315185 | METALLIC GRIDLINES AS FRONT CONTACTS OF A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE - Cadmium telluride based thin film photovoltaic devices are generally described. The device can include a transparent conductive oxide layer on a substrate. A plurality of metal gridlines can directly contact the transparent conductive oxide layer, and can be oriented in a first direction. A cadmium sulfide layer can be included on the transparent conductive oxide layer, and a cadmium telluride layer can be included on the cadmium sulfide layer. A plurality of scribe lines can be defined through the thickness of the cadmium sulfide layer and the cadmium telluride layer to define a plurality of photovoltaic cells such that the plurality of scribe lines are oriented in a second direction that intersects with the first direction. | 12-29-2011 |
| 20110315184 | PHOTOVOLTAIC (PV) MODULE WITH IMPROVED BUS TAPE TO FOIL RIBBON CONTACT - A photovoltaic (PV) module, and associated method of making, includes a substrate having a plurality of individual serially connected solar cells defined thereon. A bus tape is applied to the substrate generally at each opposite longitudinal end thereof. The bus tapes are applied over the extreme opposite solar cells for collecting the charge generated by the plurality of solar cells. A conductive member, such as a foil ribbon, is connected between the bus tapes and to an intermediate junction box that is configured for delivering the generated charge to an external load or other component. At a point of electrical connection between the bus tapes and the foil ribbon, the bus tapes are disposed beneath the foil ribbon and a conductive adhesive material, such as a solder, is between the foil ribbon and bus tapes. | 12-29-2011 |
| 20110269261 | DEVICES AND METHODS OF PROTECTING A CADMIUM SULFIDE FOR FURTHER PROCESSING - Methods for protecting a cadmium sulfide layer on a substrate are provided. The method can include sputtering a cadmium sulfide layer onto a substrate from a cadmium sulfide target at a sputtering pressure (e.g., about 10 mTorr to about 150 mTorr), and sputtering a cap layer directly on the cadmium sulfide layer. The cap layer can be sputtered directly onto the cadmium sulfide layer without breaking vacuum of the sputtering pressure. Methods are also provided for manufacturing a cadmium telluride based thin film photovoltaic device through depositing a cadmium sulfide layer on a substrate, depositing a cap layer directly on the cadmium sulfide layer, heating the substrate to sublimate at least a portion of the cap layer from the cadmium sulfide layer, and then depositing a cadmium telluride layer on the cadmium sulfide layer. | 11-03-2011 |
| 20110269256 | VAPOR DEPOSITION APPARATUS AND PROCESS FOR CONTINUOUS INDIRECT DEPOSITION OF A THIN FILM LAYER ON A SUBSTRATE - An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A deposition head is configured for sublimating a source material supplied thereto. The sublimated source material condenses onto a transport conveyor disposed below the deposition head. A substrate conveyor is disposed below the transport conveyor and conveys substrates in a conveyance path through the apparatus such that an upper surface of the substrates is opposite from and spaced below a lower leg of the transport conveyor. A heat source is configured adjacent the lower leg of the transport conveyor. The source material plated onto the transport conveyor is sublimated along the lower leg and condenses onto to the upper surface of substrates conveyed by the substrate conveyor. | 11-03-2011 |
| 20110266141 | SYSTEM AND METHODS FOR HIGH-RATE CO-SPUTTERING OF THIN FILM LAYERS ON PHOTOVOLTAIC MODULE SUBSTRATES - Systems and methods for deposition of a thin film layer on photovoltaic (PV) module substrates are generally provided. The system can include a sputtering chamber configured to receive the substrates, at least two targets positioned within the sputtering chamber, and an independent power source connected to each target. Each target can be positioned within the sputtering chamber to face the substrates such that the targets are simultaneously sputtered to supply source material to a plasma field for forming a thin film layer on a surface of the substrates. The multiple targets can also be positioned such that a facing axis extending perpendicularly from a center of each target converges at a point on the surface of the substrate. | 11-03-2011 |
| 20110265874 | CADMIUM SULFIDE LAYERS FOR USE IN CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE - Methods are generally provided for forming a cadmium sulfide layer on a substrate. In one particular embodiment, the method can include sputtering a cadmium sulfide layer on a substrate in a sputtering atmosphere comprising an inorganic fluorine source gas. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. | 11-03-2011 |
| 20110265868 | CADMIUM SULFIDE LAYERS FOR USE IN CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE - Cadmium telluride thin film photovoltaic devices are generally provided. The device can include a substrate, a transparent conductive oxide layer on the substrate; a resistive transparent buffer layer on the transparent conductive oxide layer; a cadmium sulfide layer on the resistive transparent buffer layer; a cadmium telluride layer on the cadmium sulfide layer; and, a back contact layer on the cadmium telluride layer. The cadmium sulfide layer can include oxygen in a molar percentage greater than 0% to about 20%. In one particular embodiment, a second cadmium sulfide layer substantially free from oxygen can be positioned between the cadmium sulfide layer and the cadmium telluride layer. | 11-03-2011 |
| 20110263070 | TREATMENT OF THIN FILM LAYERS PHOTOVOLTAIC MODULE MANUFACTURE - Systems and processes for treatment of a cadmium telluride thin film photovoltaic device are generally provided. The systems can include a treatment system and a conveyor system. The treatment system includes a preheating section, a treatment chamber, and an anneal oven that are integrally interconnected within the treatment system. The conveyor system is operably disposed within the treatment system and configured for transporting substrates in a serial arrangement into and through the preheat section, into and through the treatment chamber, and into and through the anneal oven at a controlled speed. The treatment chamber is configured for applying a material to a thin film on a surface of the substrate and the anneal oven is configured to heat the substrate to an annealing temperature as the substrates are continuously conveyed by the conveyor system through the treatment chamber. | 10-27-2011 |
| 20110263065 | MODULAR SYSTEM FOR HIGH-RATE DEPOSITION OF THIN FILM LAYERS ON PHOTOVOLTAIC MODULE SUBSTRATES - A system and related method for deposition of multiple thin film layers on photovoltaic (PV) module substrates includes a first processing side wherein the substrates are conveyed in a first direction for deposition of a first thin film layer on the substrates. A second processing side is operably disposed relative to the first processing side such that substrates exiting the first processing side are subsequently conveyed in a second direction through the second processing side for deposition of a second thin film layer on the first thin film layer. A first transfer station is operably disposed between the first processing side and the second processing side to receive the substrates from an exit of the first processing side and to introduce the substrates into an entry of the second processing side such that the substrates are continuously moved through the first and second processing sides for deposition of multiple thin film layers thereon. | 10-27-2011 |
| 20110263063 | SEAL CONFIGURATION FOR A SYSTEM FOR CONTINUOUS DEPOSITION OF A THIN FILM LAYER ON A SUBSTRATE - An apparatus and associated method of operation is provided for vapor deposition of a sublimated source material, such as CdTe, as a thin film on discrete photovoltaic (PV) module substrates that are conveyed in a continuous, non-stop manner through the apparatus. The apparatus includes a deposition head configured for receipt and sublimation of the source material. The deposition head has a distribution plate at a defined distance above a horizontal conveyance plane of an upper surface of the substrates conveyed through a deposition area within the apparatus. The sublimated source material moves through the distribution plate and deposits onto the upper surface of the substrates as they are conveyed through the deposition area. The substrates move into and out of the deposition area through entry and exit slots that are defined by transversely extending entrance and exit seals. The seals are disposed at a gap distance above the upper surface of the substrates that is less than the distance or spacing between the upper surface of the substrates and the distribution plate. The seals have a ratio of longitudinal length (in the direction of conveyance of the substrates) to gap distance of from about 10:1 to about 100:1. | 10-27-2011 |
| 20110262712 | METHOD FOR INCREASING THE WORKING SURFACE AREA OF A PHOTOVOLTAIC (PV) MODULE AND ASSOCIATED SUBSTRATES - A method for processing substrates in the formation of photovoltaic (PV) modules, the substrates having a plurality of thin film layers deposited thereon. The method includes determining the geometric center of the substrate and performing subsequent processing steps for defining individual cells on the substrate using the geometric center of the substrate as a starting reference point for such processing steps. | 10-27-2011 |
| 20110259732 | METHODS FOR HIGH-RATE SPUTTERING OF A COMPOUND SEMICONDUCTOR ON LARGE AREA SUBSTRATES - Methods are generally provided for sputtering thin films on individual substrates. Individual substrates can be conveyed into a vacuum chamber to draw a sputtering pressure that is less than about 50 mTorr. Then, the individual substrates can be conveyed into a sputtering chamber and past a planar magnetron continuously sputtering a target by an ionized gas at the sputtering pressure such that a thin film is formed on a surface of the individual substrate. The target is subjected to a high frequency power having a frequency from about 400 kHz to about 4 MHz at power levels of greater than about 1 kW. In one particular embodiment, the method can be generally directed to sputtering thin films on individual substrates defining a surface having a surface area of about 1000 cm | 10-27-2011 |
| 20110244622 | METHODS OF FORMING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER FOR USE IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE - Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (e.g., including cadmium stannate) on a substrate from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature greater of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. | 10-06-2011 |
| 20110244621 | METHODS OF FORMING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER FOR USE IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE - Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate from a target (e.g., including cadmium stannate) in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. | 10-06-2011 |
| 20110244620 | Methods Of Forming A Conductive Transparent Oxide Film Layer For Use In A Cadmium Telluride Based Thin Film Photovoltaic Device - Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 50° C. to about 250° C., and annealing the transparent conductive oxide layer at an anneal temperature of about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. | 10-06-2011 |
| 20110244251 | Methods Of Forming A Conductive Transparent Oxide Film Layer For Use In A Cadmium Telluride Based Thin Film Photovoltaic Device - Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 10° C. to about 100° C. A cap layer including cadmium sulfide can be deposited directly on the transparent conductive oxide layer. The transparent conductive oxide layer can be annealed at an anneal temperature from about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. An intermediate substrate is also generally provided for use to manufacture a thin film photovoltaic device. | 10-06-2011 |
| 20110165326 | AUTOMATIC FEED SYSTEM AND RELATED PROCESS FOR INTRODUCING SOURCE MATERIAL TO A THIN FILM VAPOR DEPOSITION SYSTEM - A feed system and related process are configured to continuously feed measured doses of source material to a vapor deposition apparatus wherein the source material is sublimated and deposited as a thin film on a substrate. The system includes a bulk material hopper, and an upper dose cup disposed to receive source material from the hopper. A lower dose cup is disposed in a vacuum lock chamber to receive a measured dose of source material from the upper dose cup. A transfer mechanism is disposed below the vacuum lock chamber to receive the measured dose of source material from the lower dose cup and to transfer the source material to a downstream deposition head while isolating the deposition conditions and sublimated source material within the deposition head. | 07-07-2011 |
| 20110165325 | COOL-DOWN SYSTEM AND METHOD FOR A VAPOR DEPOSITION SYSTEM - A system for vapor deposition of a thin film layer on photovoltaic (PV) module substrates includes a system for cool-down of the vacuum chamber through which substrates are conveyed in a vapor deposition process. The cool-down system is configured with the vacuum chamber to recirculate a cooling gas through the vacuum chamber and through an external heat exchanger in a closed cool-down loop. An associated method for forced cool-down of the vacuum chamber is also provided. | 07-07-2011 |
| 20110155063 | Conveyor Assembly with Removable Rollers for a Vapor Deposition System - A conveyor assembly for conveying substrates through a vapor deposition system includes a first carriage rail and a second carriage rail disposed at an opposite side of the conveyor assembly. The first and second carriage rails include a plurality of roller positions spaced longitudinally therealong. The carriage rails further include a pair of wheels at each of the roller positions, with the wheels spaced apart so as to define a cradle at the respective roller position. At least one of the wheels at each roller position on is drive wheel. A plurality of rollers extend between the first and second carriage rails. The rollers have ends that drop into the cradles at the roller positions such that the rollers are removable from the carriage rails by being lifted out of the cradles at the roller positions. | 06-30-2011 |
| 20110143491 | VAPOR DEPOSITION APPARATUS AND PROCESS FOR CONTINUOUS DEPOSITION OF A THIN FILM LAYER ON A SUBSTRATE - An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus. The distribution plate includes a pattern of holes therethrough that further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate. | 06-16-2011 |
| 20110143490 | METHODS OF MANUFACTURING CADMIUM TELLURIDE THIN FILM PHOTOVOLTAIC DEVICES - Methods for manufacturing a cadmium telluride based thin film photovoltaic device are generally disclosed. A resistive transparent layer can be sputtered on a transparent conductive oxide layer from a metal alloy target in a sputtering atmosphere of argon and oxygen that includes argon from about 5% to about 40%. A cadmium sulfide layer can then be formed on the resistive transparent layer. A cadmium telluride layer can be formed on the cadmium sulfide layer; and a back contact layer can be formed on the cadmium telluride layer. The sputtering can be accomplished within a sputtering chamber. | 06-16-2011 |
| 20110143481 | MODULAR SYSTEM AND PROCESS FOR CONTINUOUS DEPOSITION OF A THIN FILM LAYER ON A SUBSTRATE - A system and associated process for vapor deposition of a thin film layer on a photovoltaic (PV) module substrate is includes establishing a vacuum chamber and introducing the substrates individually into the vacuum chamber. A conveyor system is operably disposed within the vacuum chamber and is configured for conveying the substrates in a serial arrangement through a vapor deposition apparatus within the vacuum chamber at a controlled constant linear speed. A post-heat section is disposed within the vacuum chamber immediately downstream of the vapor deposition apparatus in the conveyance direction of the substrates. The post-heat section is configured to maintain the substrates conveyed from the vapor deposition apparatus in a desired heated temperature profile until the entire substrate has exited the vapor deposition apparatus. | 06-16-2011 |
| 20110143479 | VAPOR DEPOSITION APPARATUS AND PROCESS FOR CONTINUOUS DEPOSITION OF A THIN FILM LAYER ON A SUBSTRATE - An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A molybdenum distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus. The molybdenum distribution plate includes a pattern of holes therethrough that further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate. The molybdenum distribution plate includes greater than about 75% by weight molybdenum. | 06-16-2011 |
| 20110143478 | MODULAR SYSTEM AND PROCESS FOR CONTINUOUS DEPOSITION OF A THIN FILM LAYER ON A SUBSTRATE - A process and associated system for vapor deposition of a thin film layer on a photovoltaic (PV) module substrate is includes establishing a vacuum chamber and introducing the substrates individually into the vacuum chamber. The substrates are pre-heated as they are conveyed through the vacuum chamber, and are then conveyed in serial arrangement through a vapor deposition apparatus in the vacuum chamber wherein a thin film of a sublimed source material is deposited onto an upper surface of the substrates. The substrates are conveyed through the vapor deposition apparatus at a controlled constant linear speed such that leading and trailing sections of the substrate in a conveyance direction are exposed to the same vapor deposition conditions within the vapor deposition apparatus. The vapor deposition apparatus may be supplied with source material in a manner so as not to interrupt the vapor deposition process or non-stop conveyance of the substrates through the vapor deposition apparatus. | 06-16-2011 |
| 20110142746 | SYSTEM AND PROCESS FOR CADMIUM TELLURIDE (CdTe) RECLAMATION IN A VAPOR DEPOSITION CONVEYOR ASSEMBLY - A conveyor assembly for use in a vapor deposition apparatus wherein a sublimed source material is deposited as a thin film on a photovoltaic (PV) module substrate. The assembly includes a conveyor movable in an endless loop path that includes an upper leg that moves in a conveyance direction to carry a substrate through a deposition area of the vapor deposition apparatus. A heat source is disposed relative to the endless loop path so as to heat the conveyor at a location generally after the point where substrates leave the conveyor. The heat source heats the conveyor to a temperature effective for sublimating source material from the conveyor. A cold trap is disposed relative to the endless loop path downstream of the heat source in a direction of movement of the conveyor and is maintained at a temperature effective for causing sublimated source material generated from heating the conveyor to plate out onto a collection member configured with the cold trap. An associated process for reclamation of source material from conveyor components is also provided. | 06-16-2011 |
| 20110141473 | ACTIVE VIEWPORT DETECTION ASSEMBLY FOR SUBSTRATE DETECTION IN A VAPOR DETECTION SYSTEM - An active viewport assembly for use in detecting substrates conveyed through a vapor deposition system includes a casing configured for mounting to a wall of a vapor deposition module. The casing further includes an enclosed chamber, an exterior side port, and an interior side port. A lens assembly is disposed within the chamber and extends through the interior side port. A heater element is configured on the lens assembly within the chamber. One of an active transmitter or an active signal receiver is configured with the exterior side port external of the chamber and is axially aligned with and spaced from the lens assembly. | 06-16-2011 |
| 20110139247 | GRADED ALLOY TELLURIDE LAYER IN CADMIUM TELLURIDE THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF MANUFACTURING THE SAME - Cadmium telluride thin film photovoltaic devices are generally disclosed including a graded alloy telluride layer. The device can include a cadmium sulfide layer, a graded alloy telluride layer on the cadmium sulfide layer, and a back contact on the graded alloy telluride layer. The graded alloy telluride layer generally has an increasing alloy concentration and decreasing cadmium concentration extending in a direction from the cadmium sulfide layer towards the back contact layer. The device may also include a cadmium telluride layer between the cadmium sulfide layer and the graded alloy telluride layer. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having a graded cadmium telluride structure. | 06-16-2011 |
| 20110139246 | METHODS FOR FORMING A TRANSPARENT CONDUCTIVE OXIDE LAYER ON A SUBSTRATE - Methods of depositing a transparent conductive oxide layer on a substrate are generally disclosed. A shield of greater than about 75% by weight molybdenum can be attached to a first surface of a substrate such that the shield contacts at least about 75% of the first surface. The shield can then be heated via an energy source to cause thermal exchange from the shield to the substrate to heat the substrate to a sputtering temperature. A transparent conductive oxide layer can then be sputtered on a second surface of the substrate at the sputtering temperature. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device. | 06-16-2011 |
| 20110139245 | THIN FILM INTERLAYER IN CADMIUM TELLURIDE THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF MANUFACTURING THE SAME - A cadmium telluride thin film photovoltaic device is provided having a thin film interlayer positioned between a cadmium sulfide layer and a cadmium telluride layer. The thin film interlayer can be an oxide thin film layer (e.g., an amorphous silica layer, a cadmium stannate layer, a zinc stannate layer, etc.) or a nitride film, and can act as a chemical barrier at the p-n junction to inhibit ion diffusion between the layers. The device can include a transparent conductive layer on a glass superstrate, a cadmium sulfide layer on the transparent conductive layer, a thin film interlayer on the cadmium sulfide layer, a cadmium telluride layer on the thin film interlayer, and a back contact on the cadmium telluride layer. Methods are also provided of manufacturing such devices. | 06-16-2011 |
| 20110139235 | CADMIUM TELLURIDE THIN FILM PHOTVOLTAIC DEVICES AND METHODS OF MANUFACTURING THE SAME - Methods for manufacturing a cadmium telluride based thin film photovoltaic device are generally disclosed. The method can include sputtering a resistive transparent layer on a transparent conductive oxide layer from an alloy target including zinc from about 5% by weight and about 33% by weight and tin. The method can also include forming a cadmium sulfide layer on the resistive transparent layer, forming a cadmium telluride layer on the cadmium sulfide layer, and forming a back contact layer on the cadmium telluride layer. Cadmium telluride thin film photovoltaic devices are also generally disclosed including a resistive transparent layer having a mixture of zinc oxide and tin oxide having a zinc oxide concentration between about 5% and about 33% by mole fraction. | 06-16-2011 |
| 20110139073 | CONVEYOR ASSEMBLY FOR A VAPOR DEPOSITION APPARATUS - A conveyor assembly for use in a vapor deposition apparatus includes a housing defining an enclosed interior volume. A conveyor is driven in an endless loop path within the housing. The housing has a top member that defines an open deposition area in an upper conveyance leg of the conveyor. The conveyor includes a plurality of interconnected slats, with each slat having a respective flat, planar outer surface and transverse edge profiles such that, in the upper conveyance leg of the conveyor, the outer surfaces of the slats lie in a common horizontal plane and define an uninterrupted flat support surface for a substrate conveyed through the vapor deposition apparatus. | 06-16-2011 |
| 20110138964 | SYSTEM AND PROCESS FOR RECOVERY OF CADMIUM TELLURIDE (CdTe) FROM SYSTEM COMPONENTS USED IN THE MANUFACTURE OF PHOTOVOLTAIC (PV) MODULES - A system and associated process are provided for recovering cadmium telluride (CdTe) that has plated onto components, such as components used in the manufacture of photovoltaic (PV) modules. The system includes a vacuum oven configured for maintaining a vacuum and being heated to a temperature effective for sublimating CdTe off of components placed within the oven. A collection member is disposed so that sublimated CdTe generated in the oven diffuses to the collection member. The collection member is maintained at a temperature effective for causing the sublimated CdTe to plate thereon. The collection member is subsequently processed to collect the plated CdTe. | 06-16-2011 |
| 20090194165 | Ultra-high current density cadmium telluride photovoltaic modules - Solar photovoltaic (PV) modules have the highest possible conversion of photons to electrons in order to optimize their sunlight-to-electricity energy conversion efficiency. The electric current and sunlight-to-electricity conversion efficiency of CdTe modules is increased by about 20% with a new module design that (1) allows more light to pass through the glass and top layers to reach the PV junction area while (2) protecting the module against manufacturability pitfalls (shorts, shunts, and weak diodes) that have previously prevented the successful development of any equivalent module. | 08-06-2009 |
