20140353709 | LIGHT EMITTING DIODE - Embodiments of the invention provide a gallium nitride-based light emitting diode including a transparent electrode, which includes a metal layer and a metal oxide layer. The light emitting diode includes a substrate, an n-type gallium nitride-based semiconductor layer disposed on the substrate, a p-type gallium nitride-based semiconductor layer disposed on the n-type gallium nitride-based semiconductor layer, an active layer interposed between the n-type gallium nitride-based semiconductor layer and the p-type gallium nitride-based semiconductor layer, and a transparent electrode disposed on the p-type gallium nitride-based semiconductor layer. Here, the transparent electrode has a multilayer structure including a first metal layer and a metal oxide layer sequentially stacked one above another, and impedance of the metal oxide layer matches impedance of an external environment at an interface between the metal oxide layer and the external environment. | 12-04-2014 |