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Phyzchemix Corporation

Minato-ku, Tokyo, JP

Phyzchemix Corporation Patent applications
Patent application numberTitlePublished
20100062602Etching method, method for producing dielectric film of low dielectric constant, method for producing porous member, etching system and thin film forming equipment - To provide an etching method employing a novel CVD system and an etching apparatus applicable to the method.03-11-2010
20090095425APPARATUS FOR THE FORMATION OF A METAL FILM - An apparatus for forming a metal film, including a reaction vessel for housing a substrate, a precursor feeding device for bubbling a carrier gas through a liquid organometallic complex, vaporizing the organometallic complex, producing a precursor from the vaporized organometallic complex, and feeding the precursor into the reaction vessel, a rotating magnetic field generator for creating a rotating magnetic field in a space above the substrate, and a second plasma generator for generating a plasma from a reducing gas fed into the reaction vessel.04-16-2009