| OTKRYTOE AKTSYONERNOE OBSHCHESTVO "POLEMA" Patent applications |
| Patent application number | Title | Published |
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| 20090218735 | METHOD OF SYNTHESIS OF CERAMICS - The present invention relates to producing ceramic targets, which serves as a material source for magnetron, electron-beam, ion-beam and other film applying methods in micro-, opto-, nano-electronics. The aim of the proposed invention is to reduce the doping level of ceramics by non-controllable impurities, to increase a ceramic density and to improve performance characteristics of ceramic targets. In the method for synthesizing the ceramics doped by a low-melting metal consisting in that a mixture of components is pressed and sintered; as a doping additive, the mixture of components contains a low-melting metal and the surface of the main component particles is covered and moistened prior to pressing by the doping metal layer by grinding the mixture of the components. The grinding can be carried out at a melting temperature of the low-melting metal. In a particular case, for the synthesis of zinc oxide ceramic doped with gallium, the mixture of zinc oxide powder with gallium is triturated at a gallium melting temperature. The component mixture can contain a boron compound, as a binder and a doping additive, forming boron oxide during sintering. | 09-03-2009 |
| 20080283802 | Ceramic Target, Film Consisting of Zinc Oxide, Gallium and Boron, and Method for Preparing the Film - The present invention relates to the field of opto-electronic technology and is intended to create transparent conductive layers. More concretely, the invention relates to the field of production of ceramic materials and is intended for using in manufacturing the ceramic targets, which serve as a source of material for magnetron, electron-beam, ion-beam and other films application methods in micro-, opto-, nanoelectronics, as well as to films produced from such a ceramic target and to a method for preparing such films. Disclosed is a ceramic target on the basis of zinc oxide doped with gallium containing from 0.5 to 6 atomic % of gallium and from 0.1 to 2 atomic % of boron, a portion of gallium and boron being contained in zinc oxide crystallites as a substitution admixture, and the rest portion of gallium and boron being contained together with zinc in the amorphous intergranular phase. Also proposed is a polycrystalline film on the basis of zinc oxide with the preferred orientation (001) doped with gallium in the structure of which from 0.1 to 2% of zinc atoms are substituted by atoms of boron and from 0.5 to 6% of zinc atoms are substituted by atoms of gallium, as well as a method for preparing thereof. | 11-20-2008 |
