OSI Optoelectronics Patent applications |
Patent application number | Title | Published |
20150014804 | Thin Active Layer Fishbone Photodiode With A Shallow N+ Layer and Method of Manufacturing the Same - The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises a photodiode array and method of manufacturing a photodiode array that provides for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application. | 01-15-2015 |
20140319642 | Wavelength Sensitive Sensor Photodiodes - The present invention is directed toward a dual junction photodiode semiconductor devices with improved wavelength sensitivity. The photodiode employs a high quality n-type layer with relatively lower doping concentration and enables high minority carrier lifetime and high quantum efficiency with improved responsivity at multiple wavelengths. In one embodiment, the photodiode comprises a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type formed epitaxially in the semiconductor substrate, a second impurity region of the first conductivity type shallowly formed in the epitaxially formed first impurity region, a first PN junction formed between the epitaxially formed first impurity region and the second impurity region, a second PN junction formed between the semiconductor substrate and the epitaxially formed first impurity region, and at least one passivated V-groove etched into the epitaxially formed first impurity region and the semiconductor substrate. | 10-30-2014 |
20140319579 | Tetra-Lateral Position Sensing Detector - The present invention is directed to a position sensing detector made of a photodiode having a semi insulating substrate layer; a buffered layer that is formed directly atop the semi-insulating substrate layer, an absorption layer that is formed directly atop the buffered layer substrate layer, a cap layer that is formed directly atop the absorption layer, a plurality of cathode electrodes electrically coupled to the buffered layer or directly to the cap layer, and at least one anode electrode electrically coupled to a p-type region in the cap layer. The position sensing detector has a photo-response non-uniformity of less than 2% and a position detection error of less than 10 μm across the active area. | 10-30-2014 |
20140313518 | Laser Rangefinder Sensor - The specification discloses a pulsed time-of-flight laser range finding system used to obtain vehicle classification information. The sensor determines a distance range to portions of a vehicle traveling within a sensing zone of the sensor. A scanning mechanism made of a four facet cube, having reflective surfaces, is used to collimate and direct the laser toward traveling vehicles. A processing system processes the respective distance range data and angle range data for determining the three-dimensional shape of the vehicle. | 10-23-2014 |
20140061843 | High Speed Backside Illuminated, Front Side Contact Photodiode Array - The present specification discloses front-side contact back-side illuminated (FSC-BSL) photodiode array having improved characteristics such as high speed of each photodiode, uniformity of the bias voltage applied to different photodiode, low bias voltage, reduced resistance of each photodiode, and an associated reduction in noise. The photodiode array is made of photodiodes with front metallic cathode pads, front metallic anode pad, back metallic cathode pads, n+ doped regions and a p+ doped region. The front metallic cathode pads physically contact the n+ doped regions and the front metallic anode pad physically contacts the p+ doped region. The back metallic cathode pads physically contact the n+ doped region. | 03-06-2014 |