| 20110211608 | SEMICONDUCTOR LASER ELEMENT - A semiconductor laser element includes an active layer, an n-type carrier blocking layer arranged so as to be adjacent to the active layer and having a bandgap width that is equal to or greater than those of barrier layers, an n-type waveguide layer arranged on a side opposite to a side of the n-type carrier-blocking layer on which the active layer is arranged, so as to be adjacent to the n-type carrier blocking layer, an n-type clad layer arranged on a side opposite to a side of the n-type waveguide layer on which the active layer is arranged, so as to be adjacent to the n-type waveguide layer, and having a bandgap width that is greater than that of the n-type waveguide layer, and a p-type clad layer arranged on a side opposite to a side of the active layer on which the n-type carrier blocking layer is arranged, so as to be adjacent to the active layer, and having a bandgap width that is greater than those of the barrier layers and the n-type waveguide layer. | 09-01-2011 |
