| Opnext Japan, Inc. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120128300 | OPTICAL MODULE - Provided is an optical module, including: an optical system having an optical path in a space thereof; an electro-optical device optically connected to a first input/output port as one of an input port and an output port of the optical system; an optical waveguide having flexibility; and a housing including an optical interface. The optical waveguide includes: a first connection portion optically connected to the optical interface in the housing; and a second connection portion optically connected to a second input/output port as another one of the input port and the output port of the optical system. The optical waveguide is arranged so as to be bent in the housing. A first optical axis passing between the optical interface and the first connection portion is displaced from a second optical axis passing between the second input/output port and the second connection portion. | 05-24-2012 |
| 20120008895 | SEMICONDUCTOR OPTICAL DEVICE, OPTICAL TRANSMITTER MODULE, OPTICAL TRANSCEIVER MODULE, AND OPTICAL TRANSMISSION EQUIPMENT - Provided is a semiconductor optical device, which has a buried heterostructure structure and is formed in a structure capable of reducing a parasitic capacitance to further improve characteristics thereof, and also provided are an optical transmitter module, an optical transceiver module, and an optical transmission equipment. The semiconductor optical device includes a modulator portion for modulating light input along an emitting direction and radiating the modulated light, the modulator portion including: a mesa-stripe structure, which includes an active layer and extends in the emitting direction; and a buried layer provided adjacent to each side of the mesa-stripe structure, in which a distance between a lower surface of the buried layer and a lower surface of the active layer is 20% or more of a distance between the lower surface and an upper surface of the buried layer. | 01-12-2012 |
| 20110286083 | BACKSIDE ILLUMINATED SEMICONDUCTOR LIGHT-RECEIVING DEVICE, OPTICAL RECEIVER MODULE, AND OPTICAL TRANSCEIVER - Provided is a backside illuminated semiconductor light-receiving device enhancing a frequency characteristic without deteriorating assembling operability. The light-receiving device includes a rectangular substrate; a light receiving mesa portion formed on a center portion of one side on a front surface of the substrate and includes a PN junction portion; a P-type electrode formed on the light receiving mesa portion and conductive with one side of the PN junction portion; an N-type electrode mesa portion formed on one corner portion of the one side; an N-type electrode pulled out to the N-type electrode mesa portion and conductive with the other side of the PN junction portion; a P-type electrode mesa portion and a dummy electrode mesa portion formed in a region including three other corner portions; and a dummy electrode formed on the dummy electrode mesa portion. | 11-24-2011 |
| 20100310260 | Optical Receiver - The interference phases of two optical delay line interferometers of an optical receiver adopting the DQPSK or the like are stabilized at points, which have a difference of 90°, without bifurcation of a receiving signal or receiving data. A low-speed photocurrent flowing through the current source terminal of a photodetector that receives interfering light outputted from an optical delay line interferometer is detected. The interference phase is identified by utilizing a variation in the AC or DC component of the photocurrent dependent on the interference phase of the optical delay line interferometer. The difference between the interference phases of two optical delay line interferometers is controlled to be 90°. | 12-09-2010 |
| 20100215324 | OPTICAL MODULE - An optical module having a flexible substrate having, even after actual manufacturing steps, excellent transmission characteristics of high-frequency signals and an advantage that electromagnetic field radiation is reduced even when it is connected with a package. The flexible substrate used in external connection of the package of the optical module uses a flexible substrate having a coplanar line to which a lead pin is fixedly attached, a grounded coplanar line which is in contact with the coplanar region, and a microstrip line which is in contact with the grounded coplanar line. The flexible substrate has an electrode layout in which an electromagnetic field component of a surface ground line and a signal line is more dominant than an electromagnetic field component of a back-surface ground line and the signal line in a region of the coplanar line adjacent to the grounded coplanar line. | 08-26-2010 |
| 20100150194 | NITRIDE SEMICONDUCTOR OPTICAL ELEMENT AND MANUFACTURING METHOD THEREOF - In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In (Indium) segregation and deterioration of crystallinity. In the manufacture of an InGaN-based nitride semiconductor optical device having an InGaN-based quantum well active layer including an InGaN well layer and an InGaN barrier layer, a step of growing the InGaN barrier layer includes: a first step of adding hydrogen at 1% or more to a gas atmosphere composed of nitrogen and ammonia and growing a GaN layer in the gas atmosphere; and a second step of growing the InGaN barrier layer in a gas atmosphere composed of nitrogen and ammonia. | 06-17-2010 |
| 20100142568 | WAVELENGTH TUNABLE FILTER AND WAVELENGTH TUNABLE LASER MODULE - Disclosed are a wavelength tunable filter and a wavelength tunable laser module that are of a codirectional coupler type whose characteristics do not significantly vary with a process error. They are structured so as to include a semiconductor substrate which has a first optical waveguide and a second optical waveguide. The first and the second optical waveguide are extended from a first side of the semiconductor substrate to an opposing second side thereof. The first optical waveguide includes a first core layer, which has a planar layout having periodic convexes and concaves, and a pair of electrodes, which vertically sandwich the first core layer. The second optical waveguide includes a second core layer, which has a lower refractive index than the first core layer. Further, a layer having the same composition and film thickness as the second core layer is placed under the first core layer. | 06-10-2010 |
| 20100074574 | OPTICAL TRANSCEIVER AND PROJECTION COVERING MEMBER - Provided are an optical transceiver and a projection covering member that can suppress EMI noise radiated from a pig-tail part. An elastic covering member for covering a projection which includes an optical coupler of an optical sub assembly is made of a conductive elastic material having predetermined resistivity. At least a part of an outer circumference surface of the elastic covering member comes into intimate contact with an outer periphery of a conductive opening part of a case while an inner circumference surface of the elastic covering member contacts with the projection. | 03-25-2010 |
| 20100022043 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing semiconductor laser device capable of reducing κL, with manufacturing restrictions satisfied, is provided. In a distributed-feedback or distributed-reflective semiconductor laser device, immediately before burying regrowth of a diffraction grating, halogen-based gas is introduced to a reactor, and etching is performed on the diffraction grating so that each side wall has at least two or more crystal faces and a ratio of length of an upper side in a waveguide direction to a bottom side parallel to a (100) surface is 0 to 0.3. And, a reactive product formed on side surfaces of the diffraction grating and in trench portions between stripes of the diffraction grating at an increase of temperature for regrowth is removed. Therefore, the diffraction grating with reduced height and a sine wave shape is obtained, thereby κL of the device is reduced. Thus, an oscillation threshold and optical output efficiency can be improved. | 01-28-2010 |
