| ON Semiconductor Trading, Ltd., a Bermuda limited liability company Patent applications |
| Patent application number | Title | Published |
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| 20120043615 | SEMICONDUCTOR DEVICE - In a memory cell including CMOS inverters, an increase in an area of the memory cell caused by restrictions on a gate wiring due to a leakage current and restrictions due to design rules is suppressed. A first wiring and a second wiring are laid out as a first metal layer in the memory cell that includes a first inverter and a second inverter. The first wiring is connected with two drains in the first inverter and a second gate wiring in the second inverter. The second wiring is connected with two drains in the second inverter and a first gate wiring in the first inverter. The first wiring is laid out to overlap with the second gate wiring, and the second wiring is laid out to overlap with the first gate wiring. A second metal layer is laid out above the first metal layer, and a third metal layer is laid out above the second metal layer. | 02-23-2012 |
| 20120025305 | BIDIRECTIONAL SWITCH - An ON resistance of a bidirectional switch with a trench gate structure composed of two MOS transistors sharing a common drain is reduced. A plurality of trenches is formed in an N type well layer. Then a P type body layer is formed in every other column of the N type well layer interposed between a pair of the trenches. A first N+ type source layer and a second N+ type source layer are formed alternately in each of a plurality of the P type body layers. A first gate electrode is formed in each of a pair of the trenches interposing the first N+ type source layer, and a second gate electrode is formed in each of a pair of the trenches interposing the second N+ type source layer. A portion of the N type well layer interposed between a sidewall on an opposite side of the body layer of the trench in which the first gate electrode is formed and a sidewall on an opposite side of the body layer of the trench in which the second gate electrode is formed makes an N type drain layer serving as an electric field relaxation layer. A cross-sectional area of the N type drain layer makes a path of the ON current. | 02-02-2012 |
| 20110291242 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a semiconductor device in which an IGBT, a control circuit for the IGBT and so on are formed on an SOI substrate divided by trenches, the invention is directed to providing the IGBT with a higher breakdown voltage, an enhanced turn-off characteristic and so on. An N type epitaxial layer is formed on a dummy semiconductor substrate, a trench is formed in the N type epitaxial layer, an N type buffer layer and then a P type embedded collector layer are formed on the sidewall of the trench and the front surface of the N type epitaxial layer, and the bottom of the trench and the P+ type embedded collector layer are covered by an embedded insulation film. The embedded insulation film is covered by a polysilicon film, and a P type semiconductor substrate is attached to the polysilicon film with an insulation film being interposed therebetween. Then the dummy semiconductor substrate is removed, thereby forming an SOI substrate having the embedded insulation film, the P+ type embedded collector layer, the N type buffer layer, the N type drift layer and so on that are exposed being almost flush with each other on the bottom of the trench. An IGBT and so on are formed on this SOI substrate. | 12-01-2011 |
| 20110260276 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a semiconductor device in which a glass substrate is attached to a surface of a semiconductor die with an adhesive layer being interposed therebetween, it is an object to fill a recess portion of an insulation film formed on a photodiode with the adhesive layer without bubbles therein. In a semiconductor die in which an optical semiconductor integrated circuit including a photodiode having a recess portion of an interlayer insulation film in the upper portion, an NPN bipolar transistor, and so on are formed, generally, a light shield film covers a portion except the recess portion region on the photodiode and except a dicing region. In the invention, an opening slit is further formed in the light shield film, extending from the recess portion to the outside of the recess portion, so as to attain the object. | 10-27-2011 |
