| OMNIVISION TECHNOLOGIES, INC. Patent applications |
| Patent application number | Title | Published |
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| 20120113306 | IMAGE SENSOR WITH PIPELINED COLUMN ANALOG-TO-DIGITAL CONVERTERS - An image sensor includes a plurality of pixel cells organized into rows and columns of a pixel array. A bit line is coupled to each of the pixel cells within a line of the pixel array. Readout circuitry is coupled to the bit line to readout the image data from the pixel cells within the line. The readout circuitry includes a line amplifier coupled to the bit line to amplify the image data and first and second sample and convert circuits coupled in parallel to an output of the line amplifier to reciprocally and contemporaneously sample the image data and convert the image data from analog values to digital values. | 05-10-2012 |
| 20120104525 | IMAGE SENSOR WITH COLOR PIXELS HAVING UNIFORM LIGHT ABSORPTION DEPTHS - An example image sensor includes first, second, and third micro-lenses. The first micro-lens is in a first color pixel and has a first curvature and a first height. The second micro-lens is in a second color pixel and has a second curvature and a second height. The third micro-lens is in a third color pixel and has a third curvature and a third height. The first curvature is the same as both the second curvature and the third curvature and the first height is greater than the second height and the second height is greater than the third height, such that light absorption depths for the first, second, and third color pixels are the same. | 05-03-2012 |
| 20120087645 | VISIBLE AND INFRARED DUAL MODE IMAGING SYSTEM - An imaging system includes an image sensor and an optical filter. The image sensor captures image data in response to incident light. The optical filter filters the light and includes a dual window transmission spectrum. The dual window transmission spectrum includes a first transmission window having a first pass band aligned to pass visible light and a second transmission window having a second pass band overlapping with an absorption band of infrared light in Earth's atmosphere. | 04-12-2012 |
| 20120086844 | CIRCUIT AND PHOTO SENSOR OVERLAP FOR BACKSIDE ILLUMINATION IMAGE SENSOR - A method of operation of a backside illuminated (BSI) pixel array includes acquiring an image signal with a first photosensitive region of a first pixel within the BSI pixel array. The image signal is generated in response to light incident upon a backside of the first pixel. The image signal acquired by the first photosensitive region is transferred to pixel circuitry of the first pixel disposed on a frontside of the first pixel opposite the backside. The pixel circuitry at least partially overlaps the first photosensitive region of the first pixel and extends over die real estate above a second photosensitive region of a second pixel adjacent to the first pixel such that the second pixel donates die real estate unused by the second pixel to the first pixel to accommodate larger pixel circuitry than would fit within the first pixel. | 04-12-2012 |
| 20120080765 | METHOD OF DAMAGE-FREE IMPURITY DOPING FOR CMOS IMAGE SENSORS - A method of fabricating a backside-illuminated pixel. The method includes forming frontside components of the pixel on or in a front side of a substrate, the frontside components including a photosensitive region of a first polarity. The method further includes forming a pure dopant region of a second polarity on a back side of the substrate, applying a laser pulse to the backside of the substrate to melt the pure dopant region, and recrystallizing the pure dopant region to form a backside doped layer. Corresponding apparatus embodiments are disclosed and claimed. | 04-05-2012 |
| 20120063690 | Object-Based Optical Character Recognition Pre-Processing Algorithm - A method of pre-processing a defocused image of an object includes applying an object-based sharpening filter on the defocused image to produce a sharper image; and quantizing the sharper image using block-wise quantization. A system for generating decoded text data from alphanumeric information printed upon an object includes a camera that obtains image data of the alphanumeric information. The system also includes a pre-processor that (a) performs block-wise quantization of the image data to form conditioned image data, and (b) performs optical character recognition on the conditioned image data to generate the decoded text data. | 03-15-2012 |
| 20120061789 | IMAGE SENSOR WITH IMPROVED NOISE SHIELDING - An image sensor includes a device wafer including a pixel array for capturing image data bonded to a carrier wafer. Signal lines are disposed adjacent to a side of the carrier wafer opposite the device wafer and a metal noise shielding layer is disposed beneath the pixel array within at least one of the device wafer or the carrier wafer to shield the pixel array from noise emanating from the signal lines. A through-silicon-via (“TSV”) extends through the carrier wafer and the metal noise shielding layer and extends into the device wafer to couple to circuitry within the device wafer. Further noising shielding may be provided by highly doping the carrier wafer and/or overlaying the bottom side of the carrier wafer with a low-K dielectric material. | 03-15-2012 |
| 20120043589 | ENTRENCHED TRANSFER GATE - An image sensor pixel includes a semiconductor layer, a photosensitive region to accumulate photo-generated charge, a floating node, a trench, and an entrenched transfer gate. The photosensitive region and the trench are disposed within the semiconductor layer. The trench extends into the semiconductor layer between the photosensitive region and the floating node and the entrenched transfer gate is disposed within the trench to control transfer of the photo-generated charge from the photosensitive region to the floating node. | 02-23-2012 |
| 20120038014 | BACKSIDE ILLUMINATED IMAGE SENSOR WITH STRESSED FILM - A backside illuminated (“BSI”) complementary metal-oxide semiconductor (“CMOS”) image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge. The stress adjusting layer is disposed on a backside of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region. | 02-16-2012 |
| 20120019696 | IMAGE SENSOR WITH DUAL ELEMENT COLOR FILTER ARRAY AND THREE CHANNEL COLOR OUTPUT - A color image sensor is disclosed. The color image sensor includes a pixel array including a color filter array (“CFA”) overlaying an array of photo-sensors for acquiring a color image. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors and second color filter elements of a second color overlaying a second group of the photo-sensors. The first color filter elements contribute to a first color channel of the color image and the second color filter elements contribute to a second color channel of the color image. The color image sensor further includes a color combiner unit coupled to combine the first color channel with the second color channel to generate a third color channel of the color image based on the first and second color channels. An output port is coupled to the pixel array to output the color image having three color channels including the first, second, and third color channels. | 01-26-2012 |
| 20120019695 | IMAGE SENSOR HAVING DARK SIDEWALLS BETWEEN COLOR FILTERS TO REDUCE OPTICAL CROSSTALK - An apparatus and technique for fabricating an image sensor including the dark sidewall films disposed between adjacent color filters. The image sensor further includes an array of photosensitive elements disposed in a substrate layer, a color filter array (“CFA”) including CFA elements having at least two different colors disposed on a light incident side of the substrate layer, and an array of microlenses disposed over the CFA. Each microlens is aligned to direct light incident on the light incident side of the image sensor through a corresponding CFA element to a corresponding photosensitive element. The dark sidewall films are disposed on sides of the CFA elements and separate adjacent ones of the CFA elements having different colors. | 01-26-2012 |
| 20120018620 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH VERTICAL PIXEL SENSOR - A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light. | 01-26-2012 |
| 20120014591 | Cross-Color Image Processing Systems And Methods For Sharpness Enhancement - Systems and methods for processing a detected composite color image to form a processed composite color image includes the following, for each of a plurality of pixels in the image: (1) identifying a window of pixels in the image that surrounds the pixel, (2) calculating a weight factor coefficient for each detected color from detected color intensity values of the pixels that surround the pixel, (3) calculating raw color contributions corresponding to each nonselected color, (4) multiplying each of the detected color values of a selected color and the raw color contributions corresponding to the nonselected colors, with corresponding weight factor coefficients, to form weighted color contributions, and (5) summing the weighted color contributions to form a processed color intensity value for the pixel. | 01-19-2012 |
| 20120013777 | CMOS IMAGE SENSOR WITH IMPROVED PHOTODIODE AREA ALLOCATION - Embodiments of an apparatus comprising a pixel array comprising a plurality of macropixels. Each macropixel includes a pair of first pixels each including a color filter for a first color, the first color being one to which pixels are most sensitive, a second pixel including a color filter for a second color, the second color being one to which the pixels are least sensitive and a third pixel including a color filter for a third color, the third color being one to which pixels have a sensitivity between the least sensitive and the most sensitive, wherein the first pixels each occupy a greater proportion of the light-collection area of the macropixel than either the second pixel or the third pixel. Corresponding process and system embodiments are disclosed and claimed. | 01-19-2012 |
| 20110317065 | REINFORCEMENT STRUCTURE FOR WAFER-LEVEL CAMERA MODULE - An example reinforcement structure for protecting a wafer-level camera module includes a top sheet element and a side sheet element. The top sheet element is to be disposed over a top surface of the camera module and includes a first opening for allowing light to pass through to the camera module. The side sheet element is coupled to the top sheet element for securing the reinforcement structure to a printed circuit board (PCB). A second opening in the side sheet element is included to allow an adhesive to be dispensed through the second opening to adhere the reinforcement structure to the camera module. | 12-29-2011 |
| 20110310279 | PROVIDING MULTIPLE VIDEO SIGNALS FROM SINGLE SENSOR - A method for using a capture device to capture at least two video signals corresponding to a scene, includes: providing a two-dimensional image sensor having a plurality of pixels; reading a first group of pixels from the image sensor at a first frame rate to produce a first video signal of the image scene; reading a second group of pixels from the image sensor at a second frame rate for producing a second video signal; and using at least one of the video signals for adjusting one or more of the capture device parameters. | 12-22-2011 |
| 20110285880 | COLOR FILTER ARRAY ALIGNMENT MARK FORMATION IN BACKSIDE ILLUMINATED IMAGE SENSORS - A backside illuminated image sensor includes a sensor layer comprising photosensitive elements of the pixel array, an epitaxial layer formed on a frontside surface of the sensor layer, and a color filter array formed on a backside surface of the sensor layer. The epitaxial layer comprises polysilicon color filter array alignment marks formed in locations corresponding to respective color filter array alignment mark openings in the frontside surface of the sensor layer. The color filter array is aligned to the color filter array alignment marks of the epitaxial layer. The image sensor may be implemented in a digital camera or other type of digital imaging device. | 11-24-2011 |
| 20110284982 | BACKSIDE-ILLUMINATED (BSI) IMAGE SENSOR WITH BACKSIDE DIFFUSION DOPING - Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed. | 11-24-2011 |
| 20110278436 | IMAGE SENSOR WITH BACKSIDE PASSIVATION AND METAL LAYER - An image sensor includes a semiconductor layer that filters light of different wavelengths. For example, the semiconductor layer absorbs photons of shorter wavelengths and passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed near a front side of the semiconductor layer. A dopant layer is formed below the photodiode near a back side of the semiconductor layer. A mirror that primarily reflects photons of longer visible wavelengths is disposed on the back side of the semiconductor layer. | 11-17-2011 |
| 20110266421 | IMAGE SENSOR HAVING METAL REFLECTORS WITH SCALED WIDTHS - An image sensor in accordance with embodiments disclosed herein includes an array of imaging pixels, an insulator layer, and a plurality of metal reflectors. The array of imaging pixels are disposed within a semiconductor layer, where each imaging pixel in the array of imaging pixels includes a photosensitive element configured to receive light from a backside of the image sensor. The insulator layer is disposed on a frontside of the semiconductor layer and the plurality of metal reflectors are disposed within the insulator layer to reflect the light to a respective photosensitive element. A width of each of the plurality of metal reflectors is equal to a width of a metal reflector at the center of the array multiplied by a scaling factor, where the scaling factor is dependent on a distance of the metal reflector from the center of the array. | 11-03-2011 |
| 20110261233 | IMAGING SENSOR HAVING REDUCED COLUMN FIXED PATTERN NOISE - An imaging sensor having reduced column fixed pattern noise includes a plurality of imaging pixels and a column sampling circuit. The plurality of imaging pixels are arranged in a column the column sampling circuit is coupled to the column. A plurality of sampling channels are included in the column sampling circuit, where the column sampling circuit randomly selects a first sampling channel from among the plurality of sampling channels to sample a first data signal from a pixel included in the plurality of imaging pixels and where the column sampling circuit randomly selects a second sampling channel from among the plurality of sampling channels to sample a second data signal from the pixel. | 10-27-2011 |
| 20110260221 | LASER ANNEAL FOR IMAGE SENSORS - A technique for fabricating an image sensor including a pixel circuitry region and a peripheral circuitry region includes fabricating front side components on a front side of the image sensor. A dopant layer is implanted on a backside of the image sensor. A anti-reflection layer is formed on the backside and covers a first portion of the dopant layer under the pixel circuitry region while exposing a second portion of the dopant layer under the peripheral circuitry region. The first portion of the dopant layer is laser annealed from the backside of the image sensor through the anti-reflection layer. The anti-reflection layer increases a temperature of the first portion of the dopant layer during the laser annealing. | 10-27-2011 |
| 20110254987 | CMOS IMAGE SENSOR ARRAY WITH INTEGRATED NON-VOLATILE MEMORY PIXELS - An imaging system includes an imaging array and readout circuitry. The imaging array includes image sensor pixels for capturing image data and one or more non-volatile memory (NVM) pixels for storing NVM data. The readout circuitry is coupled to the imaging array to readout the image data and the non-volatile memory data. | 10-20-2011 |
| 20110242374 | IMAGER WITH VARIABLE AREA COLOR FILTER ARRAY AND PIXEL ELEMENTS - A color pixel array includes a plurality of micropixels. Each micropixel includes a photosensitive element and a color filter optically aligned with the photosensitive element to filter incident light prior to reaching the photosensitive element. The micropixels are organized into a repeating pattern of triangular macropixels each having a triangular shape within the color pixel array. | 10-06-2011 |
| 20110241090 | HIGH FULL-WELL CAPACITY PIXEL WITH GRADED PHOTODETECTOR IMPLANT - Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of the photodetector region, positioning the substrate at a plurality of twist angles, and at each of the plurality of twist angles, directing dopants at the photodetector area at a selected tilt angle. Embodiments of a CMOS pixel comprising a photodetector region formed in a substrate, the photodetector region comprising overlapping first and second dopant implants, wherein the overlap region has a different dopant concentration than the non-overlapping parts of the first and second implants, a floating diffusion formed in the substrate, and a transfer gate formed on the substrate between the photodetector and the transfer gate. Other embodiments are disclosed and claimed. | 10-06-2011 |
| 20110218457 | DISPOSABLE VIEWABLE UTERUS CAVITY SUCTION TUBE - A disposable viewable uterus cavity suction tube is used in conjunction with a negative pressure suction system and a display system. A suction opening is at the side wall of the uterus cavity suction tube. A separator is between the suction opening and the front end of the uterus cavity suction tube, which separates the uterus cavity suction tube into the suction cavity and the enclosed imaging cavity. An imaging head and an illumination device are in the imaging cavity. A see-through cover is at the tube wall above the imaging head and illumination device. The angle β between the central optical axis of the lens of the imaging head and the central normal of the suction opening is a sharp angle. The signal wire of the imaging head and illumination system are installed inside the tube wall. The characteristic of the disposable viewable uterus cavity suction tube is that the lens of the imaging head is a wide angle lens. By applying the aforementioned technical concept, the view angle of the disposable viewable uterus cavity suction tube can be larger than 80°, which allows the operator conveniently observing the whole image of the target. | 09-08-2011 |
| 20110217807 | Image sensor array with conformal color filters - An image sensor pixel includes a photo-sensor region, a microlens, a first color filter layer, and a second color filter layer. The photo-sensor region is disposed within a semiconductor die. The microlens is disposed on the semiconductor die in optical alignment with the photo-sensor region. The first color filter layer is disposed between the photo-sensor region and the microlens. The second color filter layer is disposed on an opposite side of the microlens as the first color filter layer. | 09-08-2011 |
| 20110199518 | IMAGE SENSOR WITH IMPROVED BLACK LEVEL CALIBRATION - An imaging system capable of black level calibration includes an imaging pixel array, at least one black reference pixel, and peripheral circuitry. The imaging pixel array includes a plurality of active pixels each coupled to capture image data. The black reference pixel is coupled to generate a black reference signal for calibrating the image data. Light transmitting layers are disposed on a first side of a pixel array die including the imaging system and cover at least the imaging pixel array and the black reference pixel. A light shielding layer is disposed on the first side of the pixel array die and covers a portion of the light transmitting layers and the black reference pixel without covering the imaging pixel array. | 08-18-2011 |
| 20110177650 | CMOS IMAGE SENSOR WITH SELF-ALIGNED PHOTODIODE IMPLANTS - An example method of forming a pinned photodiode includes applying a photoresist mask to a semiconductor layer at a location where a transfer gate will subsequently be formed. First dopant ions are then implanted at a first angle to form a first dopant region under an edge of the photoresist mask. Next, a photoresist mask is etched such that a thickness of the photoresist mask is reduced to form a trimmed photoresist mask. Second dopant ions are then implanted at a second angle to form a second dopant region, wherein the second dopant ions are shadowed by the trimmed photoresist mask to exclude the second dopant ions from a region partially above the first dopant region and adjacent to an edge of the trimmed photoresist mask. | 07-21-2011 |
| 20110169991 | IMAGE SENSOR WITH EPITAXIALLY SELF-ALIGNED PHOTO SENSORS - An image sensor pixel includes a substrate doped to have a first conductivity type. A first epitaxial layer is disposed over the substrate and doped to also have the first conductivity type. A transfer transistor gate is formed on the first epitaxial layer. An epitaxially grown photo-sensor region is disposed in the first epitaxial layer and has a second conductivity type. The epitaxially grown photo-sensor region includes an extension region that extends under a portion of the transfer transistor gate. | 07-14-2011 |
| 20110140221 | IMAGE SENSOR HAVING CURVED MICRO-MIRRORS OVER THE SENSING PHOTODIODE AND METHOD FOR FABRICATING - The invention involves the integration of curved micro-mirrors over a photodiode active area (collection area) in a CMOS image sensor (CIS) process. The curved micro-mirrors reflect light that has passed through the collection area back into the photo diode. The curved micro-mirrors are best implemented in a backside illuminated device (BSI). | 06-16-2011 |
| 20110115002 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH REINFORCED PAD STRUCTURE - A backside illuminated imaging sensor with reinforced pad structure includes a device layer, a metal stack, an opening and a frame. The device layer has an imaging array formed in a front side of the device layer and the imaging array is adapted to receive light from a back side of the device layer. The metal stack is coupled to the front side of the device layer where the metal stack includes at least one metal interconnect layer having a metal pad. The opening extends from the back side of the device layer to the metal pad to expose the metal pad for wire bonding. The frame is disposed within the opening to structurally reinforce the metal pad. | 05-19-2011 |
| 20110109752 | IMAGE SENSOR WITH SHAKING COMPENSATION - A camera includes a main pixel array, one or more shaking detection pixel groups, and logic circuitry. The main pixel array can generate image frames of an image at an image frame rate. The one or more shaking detection pixel groups can generate shaking detection data where one or more pixels of the first shaking detection pixel group are sampled at a rate that is faster than the image frame rate. The logic circuitry can evaluate the shaking detection data to select a frame of the generated image frames after receiving a picture taking signal. | 05-12-2011 |
| 20110108938 | IMAGE SENSOR HAVING WAVEGUIDES FORMED IN COLOR FILTERS - An image sensor having an array of pixels disposed in a substrate. Each pixel includes a photosensitive element, a color filter, and waveguide walls. The waveguide walls are disposed in the color filter and surround portions of the color filter to form waveguides through the color filter. The refractive index of the waveguide walls is less than the refractive index of the color filter. The image sensor may be back side illuminated (BSI) or front side illuminated (FSI). In some embodiments, metal walls may be coupled to the waveguide walls. | 05-12-2011 |
| 20110095188 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED INFRARED SENSITIVITY - A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer. | 04-28-2011 |
| 20110090968 | Low-Cost Video Encoder - A method for encoding a new unit of video data includes: (1) incrementally, in raster order, decoding blocks within a search window of a unit of encoded reference video data into a reference window buffer, and (2) encoding, in raster order, each block of the new unit of video data based upon a decoded block of the reference window buffer. A system for encoding a new unit of video data includes a reference window buffer, a decoding subsystem, and an encoding subsystem. The decoding subsystem is configured to incrementally decode, in raster order, blocks within a search window of a unit of encoded reference video data into the reference window buffer. The encoding subsystem is configured to encode, in raster order, each block of the new unit of video data based upon a decoded block of the reference window buffer. | 04-21-2011 |
| 20110089517 | CMOS IMAGE SENSOR WITH HEAT MANAGEMENT STRUCTURES - An image sensor includes a device wafer substrate of a device wafer, a device layer of the device wafer, and optionally a heat control structure and/or a heat sink. The device layer is disposed on a frontside of the device wafer substrate and includes a plurality of photosensitive elements disposed within a pixel array region and peripheral circuitry disposed within a peripheral circuits region. The photosensitive elements are sensitive to light incident on a backside of the device wafer substrate. The heat control structure is disposed within the device wafer substrate and thermally isolates the pixel array region from the peripheral circuits region to reduce heat transfer between the peripheral circuits region and the pixel array region. The heat sink conducts heat away from the device layer. | 04-21-2011 |
| 20110089311 | TRENCH TRANSFER GATE FOR INCREASED PIXEL FILL FACTOR - An image sensor provides high scalability and reduced image lag. The sensor includes a first imaging pixel that has a first photodiode region formed in a substrate of the image sensor. The sensor also includes a first vertical transfer transistor coupled to the first photodiode region. The first vertical transfer transistor can be used to establish an active channel. The active channel typically extends along the length of the first vertical transfer transistor and couples the first photodiode region to a floating diffusion. | 04-21-2011 |
| 20110085067 | MULTILAYER IMAGE SENSOR PIXEL STRUCTURE FOR REDUCING CROSSTALK - An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type. | 04-14-2011 |
| 20110085062 | SYSTEM AND METHOD FOR IMPROVED IMAGE PROCESSING - A system and method for improving image processing. In one aspect of the invention the method includes receiving data indicating an intensity of light incident on a first pixel of a pixel array and determining from the received data if the intensity of incident light on the first pixel satisfies a first condition. A processing operation is performed on data received from a second, third and fourth pixel of the pixel array but skipped on the data received from the first pixel if the first condition is satisfied. The first condition includes whether the first pixel is substantially saturated in response to an intensity of light incident on the first pixel. | 04-14-2011 |
| 20110068429 | IMAGE SENSOR WITH CONTACT DUMMY PIXELS - An image sensor array includes a substrate layer, a metal layer, an epitaxial layer, a plurality of imaging pixels, and a contact dummy pixel. The metal layer is disposed above the substrate layer. The epitaxial layer is disposed between the substrate layer and the metal layer. The imaging pixels are disposed within the epitaxial layer and each include a photosensitive element for collecting an image signal. The contact dummy pixel is dispose within the epitaxial layer and includes an electrical conducting path through the epitaxial layer. The electrical conducting path couples to the metal layer above the epitaxial layer. | 03-24-2011 |
| 20110032405 | IMAGE SENSOR WITH TRANSFER GATE HAVING MULTIPLE CHANNEL SUB-REGIONS - An image sensor pixel includes a photosensitive element, a floating diffusion region and a transfer transistor channel region. The transfer transistor channel region is disposed between the photosensitive region and the floating diffusion region. The transfer transistor channel region includes a first channel sub-region having a first doping concentration and a second channel sub-region having a second doping concentration that is different from the first doping concentration. | 02-10-2011 |
| 20100323470 | BACKSIDE ILLUMINATED IMAGE SENSOR HAVING DEEP LIGHT REFLECTIVE TRENCHES - An array of pixels is formed using a semiconductor layer having a frontside and a backside through which incident light is received. Each pixel typically includes a photosensitive region formed in the semiconductor layer and a trench formed adjacent to the photosensitive region. The trench causes the incident light to be directed away from the trench and towards the photosensitive region. | 12-23-2010 |
| 20100315053 | HYBRID ON-CHIP REGULATOR FOR LIMITED OUTPUT HIGH VOLTAGE - A driver circuit includes a pre-driver and an output driver. The pre-driver is coupled to receive an input signal and to generate first and second pre-driver output signals in response to the input signal. The output driver generates a driver output signal and includes first and second switches, a native mode transistor, and a driver output. The first switch has a first control terminal coupled to receive the first pre-driver output signal. The second switch has a second control terminal coupled to receive the second pre-driver output signal. The native mode transistor is coupled in series between the first switch and the second switch and has a third control terminal coupled to receive the voltage reference signal. The driver output is coupled between the native mode transistor and the second switch to output the driver output signal. | 12-16-2010 |
| 20100314667 | CMOS PIXEL WITH DUAL-ELEMENT TRANSFER GATE - Embodiments of a pixel that includes a photosensitive region, a floating diffusion region, and a transistor transfer gate disposed between the photosensitive region and the floating diffusion region. The transfer gate includes first and second transfer gate elements, the first transfer gate element having a different doping than the second transfer gate element. By controlling the doping of the first and second transfer gate elements a transfer gate can be provided with a greater threshold voltage near the photosensitive region and a lesser threshold voltage near the floating diffusion region. Other embodiments, including process embodiments, are disclosed and claimed. | 12-16-2010 |
| 20100289911 | IMAGE SENSOR AND PIXEL THAT HAS POSITIVE TRANSFER GATE VOLTAGE DURING INTEGRATION PERIOD - A pixel and image sensor formed in accordance with the present invention has two modes of operation: a normal mode and a low light mode. The present invention switches from a normal to a low light mode based upon the amount of illumination on the image sensor. Once the level of illumination is determined, a decision is made by comparing the level of illumination to a threshold whether to operate in normal mode or low light mode. In low light mode, the reset transistor (for a 3T pixel) or the transfer transistor (for a 4T pixel) is biased positive. | 11-18-2010 |
| 20100276574 | IMAGE SENSOR WITH GLOBAL SHUTTER - An image sensor includes a photodiode to accumulate an image charge and a storage transistor to store the image charge. A transfer transistor is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge to a readout node and a reset transistor is coupled to the readout node. A controller is configured to apply a negative voltage to a gate of the storage transistor before activating the gate of the storage transistor to store the image charge. | 11-04-2010 |
| 20100271524 | MULTILAYER IMAGE SENSOR PIXEL STRUCTURE FOR REDUCING CROSSTALK - An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type. | 10-28-2010 |
| 20100176276 | PENINSULA TRANSFER GATE IN A CMOS PIXEL - A pinned photodiode structure with peninsula-shaped transfer gate which decrease the occurrence of a potential barrier between the photodiode and the floating drain, prevents loss of full well capacity (FWC) and decreases occurrences of image lag. | 07-15-2010 |
| 20100164042 | BACKSIDE-ILLUMINATED (BSI) IMAGE SENSOR WITH BACKSIDE DIFFUSION DOPING - Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed. | 07-01-2010 |
| 20100159632 | TECHNIQUE FOR FABRICATION OF BACKSIDE ILLUMINATED IMAGE SENSOR - An array of backside illuminated image sensors is fabricated using a number of processes. These processes include fabricating front side components of the backside illuminated image sensors into or onto a first side of an epitaxial layer disposed over a substrate layer. Dopants are diffused from the substrate through a second side of the epitaxial layer to create a dopant gradient band in the epitaxial layer adjacent to the substrate layer. The backside of the array is then thinned to remove the substrate layer while retaining at least a portion of the dopant gradient band in the epitaxial layer. | 06-24-2010 |
| 20100149403 | AUTOMATIC WHITE BALANCING USING METER SENSORS - An image sensor system includes an image sensor that can be exposed with light from an illuminated scene to produce a secondary image, a meter sensor that can be exposed with light from the illuminated scene to produce a meter secondary image, and an image processor. The image processor can be configured to determine an average pixel color in the secondary image. The image processor can also be configured to determine a white balancing point in response to the secondary image average pixel color, the meter secondary image, meter calibration information for the meter sensor, and the image calibration information for the image sensor. | 06-17-2010 |
| 20100144081 | IMAGE SENSOR PIXEL HAVING PHOTODIODE WITH MULTI-DOPANT IMPLANTATION - An active pixel using a photodiode with multiple species of N type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N | 06-10-2010 |
| 20100140675 | CMOS IMAGE SENSOR WITH IMPROVED BACKSIDE SURFACE TREATMENT - An apparatus and method for fabricating an array of backside illuminated (“BSI”) image sensors is disclosed. Front side components of the BSI image sensors are formed into a front side of the array. A dopant layer is implanted into a backside of the array. The dopant layer establishes a dopant gradient to encourage photo-generated charge carriers to migrate towards the front side of the array. At least a portion of the dopant layer is annealed. A surface treatment is formed on the backside of the dopant layer to cure surface defects. | 06-10-2010 |
| 20100123174 | LIGHTLY-DOPED DRAINS (LDD) OF IMAGE SENSOR TRANSISTORS USING SELECTIVE EPITAXY - Embodiments of the present invention are directed to an image sensor having pixel transistors and peripheral transistors disposed in a silicon substrate. For some embodiments, a protective coating is disposed on the peripheral transistors and doped silicon is epitaxially grown on the substrate to form lightly-doped drain (LDD) areas for the pixel transistors. The protective oxide may be used to prevent epitaxial growth of silicon on the peripheral transistors during formation of the LDD areas of the pixel transistors. | 05-20-2010 |
| 20100123069 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED ANGULAR RESPONSE - A backside illuminated imaging pixel with improved angular response includes a semiconductor layer having a front and a back surface. The imaging pixel also includes a photodiode region formed in the semiconductor layer. The photodiode region includes a first and a second n-region. The first n-region has a centerline projecting between the front and back surfaces of the semiconductor layer. The second n-region is disposed between the first n-region and the back surface of the semiconductor layer such that the second n-region is offset from the centerline of the first n-region. | 05-20-2010 |
| 20100117123 | IMAGE SENSOR PIXEL HAVING A LATERAL DOPING PROFILE FORMED WITH INDIUM DOPING - An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant. | 05-13-2010 |
| 20100109060 | IMAGE SENSOR WITH BACKSIDE PHOTODIODE IMPLANT - An array of pixels is formed using a substrate. Each pixel can be formed on the substrate, which has a backside and a frontside that includes metalization layers. A photodiode is formed in the substrate and frontside P-wells are formed using frontside processing that are adjacent to the photosensitive region. A first N-type region is formed in the substrate below the photodiode. A second N-type region is formed in a region of the substrate below the first N-type region and is formed using backside processing. | 05-06-2010 |
| 20100103292 | SINGLE ROW BASED DEFECTIVE PIXEL CORRECTION - An image sensor uses a single row of an array of pixels elements to determine whether a pixel is defective and to recover the defective pixel. The image sensor includes a “maximum of minimum” filter to remove a “black” pixel from a raw image. The image sensor also includes a “minimum of maximum” filter to remove a “white” pixel from the raw image. | 04-29-2010 |
| 20100084692 | IMAGE SENSOR WITH LOW CROSSTALK AND HIGH RED SENSITIVITY - A color pixel array includes first, second, and third pluralities of color pixels each including a photosensitive region disposed within a first semiconductor layer. In one embodiment, a second semiconductor layer including deep dopant regions is disposed below the first semiconductor layer. The deep dopant regions each reside below a corresponding one of the first plurality of color pixels but substantially not below the second and third pluralities of color pixels. In one embodiment, buried wells are disposed beneath the second and third pluralities of color pixels but substantially not below the first plurality of color pixels. | 04-08-2010 |
| 20100060991 | Electrically-Controlled, Variable Focal Length Liquid-Based Optical Imaging Apparatus and Method - An optical imaging apparatus having a variable focal length is disclosed. The optical imaging apparatus includes a first double-liquid variable focal lens and a second double-liquid variable focal lens. The first and second double-liquid variable focal lenses are aligned on a common axis and operable to have opposite varying curvatures. | 03-11-2010 |
| 20100051785 | IMAGE SENSOR WITH PRISMATIC DE-MULTIPLEXING - An image sensor includes a first imaging pixel for a first color having a photosensitive region disposed within a substrate of the image sensor and a second imaging pixel for a second color that is different from the first color having a photosensitive region disposed within the substrate. A refraction element disposed adjacent to the substrate, so that the refraction element refracts light of the first color to the photosensitive region of the first imaging pixel and refracts light of the second color to the photosensitive region of the second imaging pixel. | 03-04-2010 |
| 20100042956 | System, and Method, And Computer Readable Medium For Designing A Scalable Clustered Storage Integrated Circuit For Multi-Media Processing - An integrated circuit includes a clustered memory storage subsystem. The integrated circuit utilizes a baseline design that supports a scalable number of memory clusters. The number of storage devices within an individual memory cluster may also be selected to adjust the memory capacity. A single baseline design of a clustered memory storage subsystem design is customized for a particular integrated circuit with the number of memory clusters and storage devices within memory clusters selected for the memory requirements of a particular application. The design and verification costs to fabricate different versions of the integrated circuit are thus reduced. | 02-18-2010 |
| 20100038523 | IMAGE SENSOR WITH BURIED SELF ALIGNED FOCUSING ELEMENT - An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and an embedded layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the front side of the semiconductor substrate above the optical sensor region. The embedded focusing layer is disposed on the backside of the semiconductor substrate in a Backside Illuminated (BSI) image sensor, supported by a support grid, or a support grid composed of the semiconductor substrate. | 02-18-2010 |
| 20100013039 | Backside-illuminated imaging sensor including backside passivation - The disclosure describes embodiments of a process comprising forming a pixel on a frontside of a substrate, the substrate having a frontside, a backside, and a thickness substantially equal to a distance between the frontside and the backside. The thickness of the substrate is reduced by removing material from the backside of the substrate to allow for backside illumination of the pixel, and the backside of the substrate is treated with a hydrogen plasma to passivate the backside. The disclosure also describes embodiments of an apparatus comprising a semiconductor wafer having a frontside, a backside, and a thickness substantially equal to a distance between the frontside and the backside, and a pixel formed on the frontside, wherein the thickness of the wafer is selected and adjusted to allow for illumination of the pixel through the backside of the wafer, and wherein the backside is treated with a hydrogen plasma to passivate the backside. | 01-21-2010 |
| 20090316030 | Partial row readout for image sensor - An image sensor includes a color filter array, sense amplifiers, multiplexing circuitry, and an output. The color filter array acquires image data using an array of M columns and N rows of pixels. The sense amplifiers are coupled to the color filter array for reading out image data from the color filter array. The multiplexing circuitry couples the sense amplifiers to the color filter array, wherein each sense amplifier is time shared across multiple columns and multiple rows. The output is coupled to receive the image data from the sense amplifiers and output the image data off-chip. | 12-24-2009 |
| 20090309995 | Automatic white balance using non-uniform averaging - The specification disclosed embodiments of an apparatus comprising an automatic white balance (AWB) circuit coupled to a pixel array to transform red, green, and blue color data obtained from each pixel into x and y chromaticity values for each pixel, determine a distance between the Planckian locus and the x and y chromaticity values for each pixel, determine a weight for each pixel based on the distance between its x and y chromaticity values and the Planckian locus, determine red, green, and blue adjustments for each pixel using its weight, and apply a white balance adjustment to the red, green and blue values obtained from each pixel. Other embodiments are also disclosed and claimed. | 12-17-2009 |
| 20090302411 | Apparatus And Method For Image Sensor With Carbon Nanotube Based Transparent Conductive Coating - A backside illuminated image sensor has a carbon nanotube transparent conductive coating formed on the backside of the image sensor. In one implementation the carbon nanotube transparent conductive coating acts as a wavelength selective filter to filter out infrared light. In one implementation the carbon nanotube transparent conductive coating has an optical transparency between 50% and 80% for blue and green color bands. | 12-10-2009 |
| 20090302409 | IMAGE SENSOR WITH MULTIPLE THICKNESS ANTI-RELFECTIVE COATING LAYERS - An image sensor includes a substrate having a surface at which incident light is received. A pixel array is formed over and within the substrate. The pixel array includes a first and a second pixel arranged to receive light of different colors. The first pixel includes a photosensitive region formed in the substrate and has a first anti-reflective coating (ARC) layer formed over the photosensitive region. The first ARC layer has a first thickness that produces destructive interference above the first ARC layer in response to the incident light. The second pixel includes a photosensitive region formed in the substrate, and a second ARC layer formed over the photosensitive region that produces destructive interference above the second ARC layer in response to the incident light. | 12-10-2009 |
| 20090302358 | CMOS image sensor with high full-well-capacity - An image sensor with a high full-well capacity includes a photosensitive region, a transfer gate, and sidewall spacers. The photosensitive region is formed to accumulate an image charge in response to light. The transfer gate disposed adjacent to the photosensitive region and coupled to selectively transfer the image charge from the photosensitive region to other pixel circuitry. First and second sidewall spacers are disposed on either side of the transfer gate. The first sidewall spacer closest to the photosensitive region is narrower than the second sidewall spacer. In some cases, the first sidewall spacer may be omitted. | 12-10-2009 |
| 20090296810 | VIDEO CODING APPARATUS AND METHOD FOR SUPPORTING ARBITRARY-SIZED REGIONS-OF-INTEREST - A computer readable storage medium has executable instructions to select a plurality of macroblocks in a video sequence to be coded as anchor macroblocks, the anchor macroblocks distributed across the video sequence and facilitating random access decoding of a portion of the video sequence. The video sequence is coded into a bit stream. Auxiliary information associated with the anchor macroblocks is generated. The auxiliary information associated with the anchor macroblocks is inserted in a supplementary section of the bit stream. | 12-03-2009 |
| 20090295953 | IMAGE SENSOR WITH FOCUSING INTERCONNECTION - An image sensor includes a photosensitive region formed in a substrate of an integrated circuit. The substrate has a first layer of metal formed over the surface of the substrate so the first layer of metal defines a first aperture that has a first aperture width through with the incident light passes before illuminating the photosensitive region. The first aperture width is equal to or less than the width of the photosensitive region below the first aperture. The substrate also has a second layer of metal formed over the first layer of metal. The second aperture has a second aperture width that is wider than the first aperture width. The first and second apertures focus the incident light onto the photosensitive region. | 12-03-2009 |
| 20090294858 | TRANSISTOR WITH CONTACT OVER GATE ACTIVE AREA - A transistor contact over a gate active area includes a transistor gate formed on a substrate of an integrated circuit. A gate insulator is formed beneath the transistor gate and helps define an active area for the transistor gate. An insulating layer is formed over the transistor gate. A metal contact plug is formed within a portion of the insulating layer that lies over the active area such that the metal contact plug forms an electrical contact with the transistor gate. | 12-03-2009 |
| 20090294811 | IMAGE SENSOR WITH BACKSIDE PASSIVATION AND METAL LAYER - An image sensor includes a semiconductor layer that low-pass filters light of different wavelengths. For example, the semiconductor layer proportionately absorbs photons of shorter wavelengths and proportionately passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed on a front surface of the semiconductor layer, where the photodiode is an N | 12-03-2009 |
| 20090294632 | GLOBALLY RESET IMAGE SENSOR PIXELS - An imaging circuit includes a pixel array that is arranged to concurrently reset pixels in a pixel array in response to a global reset signal. The pixels are arranged in rows, such that the rows can be individually selected by a row select line. A reset transistor concurrently resets the pixels by coupling a reset voltage to a floating diffusion of the pixel. A transfer gate transistor selectively couples the floating diffusion to a storage region. A storage gate transistor selectively couples the storage region to a photosensitive region so that the reset transistor, the transfer gate transistor, and the storage gate transistor for each of the pixels can be activated in response to the global reset signal. A double correlated sampler may be used to provide a correlated double sample using a first sampled voltage of a reset voltage and a second sampled voltage of a pixel voltage that is produced when a photodiode region is exposed to incident light. | 12-03-2009 |
| 20090289169 | IMAGE SENSOR WITH SIMULTANEOUS AUTO-FOCUS AND IMAGE PREVIEW - Embodiments of the present invention are directed to a plurality of light sensor cells disposed in a substrate in a shared pixel arrangement. Common readout circuitry is used to simultaneously read out image information from a group of light sensor cells. The image information from the group of light sensor cells is added together simultaneously and coupled to auto-focus circuitry and/or preview circuitry to provide for better lens adjustments and preview display. | 11-26-2009 |
| 20090274213 | APPARATUS AND METHOD FOR COMPUTATIONALLY EFFICIENT INTRA PREDICTION IN A VIDEO CODER - A computer readable storage medium has executable instructions to select a plurality of blocks in a video sequence to be coded as intra-coded blocks. Intra prediction modes are selected for all intra-coded blocks in a macroblock based on original pixels of neighboring blocks. The mode selection of all intra-coded blocks can be conducted in parallel. The intra-coded blocks in the macroblock are predicted with the selected intra prediction modes based on reconstructed pixels of neighboring blocks. | 11-05-2009 |
| 20090274211 | APPARATUS AND METHOD FOR HIGH QUALITY INTRA MODE PREDICTION IN A VIDEO CODER - A computer readable storage medium has executable instructions to select a plurality of blocks in a video sequence to be coded as intra-coded blocks. Aggregate intra prediction costs are computed for each intra-coded block relative to a corresponding previous intra-coded block. An intra prediction mode is selected for each intra-coded block based on the aggregate intra prediction costs. | 11-05-2009 |
| 20090272879 | High conversion gain image sensor - An image sensor includes a photosensitive element, a reset circuit, an amplifier transistor, and a current source. The photosensitive element is coupled to generate an image charge in response to incident light and transfer the image charge to a circuit node. The reset circuit is coupled to selectively reset a voltage at the circuit node. The amplifier transistor includes a gate terminal responsive to the voltage at the circuit node. A current source is coupled between a high level power rail and a second terminal of the amplifier transistor. | 11-05-2009 |
| 20090268053 | System and Method For Lens Shading Correction Of An Image Sensor Using Splines - An image sensing system provides for accurate lens shading correction even when there is significant lens shading asymmetry and non-uniformity. A two-dimensional B-spline technique is used to determine lens shading correction surfaces. The number of zones is selected to achieve accurate correction of center, edge, and corner regions of an image. Separate lens shading correction surfaces are calculated for a set of standard illuminants to permit lens shading correction to be adapted based on the illuminant used to capture the image. | 10-29-2009 |
| 20090267170 | Apparatus and Method For Using Spacer Paste to Package an Image Sensor - A packaged image sensor assembly utilizes a spacer paste to control the height of a transparent window above an image sensor die to provide safe wire bond clearance. A dam structure is used to control the height of the transparent window. The dam may be formed either entirely from spacer paste or by depositing the spacer paste on an underlying patterned mesa. An additional encapsulant is provided outside of the dam to encapsulate wirebonds and provide additional protection from moisture permeation. | 10-29-2009 |
| 20090267070 | Multilayer image sensor structure for reducing crosstalk - An image sensor pixel includes a substrate, an epitaxial layer, and a light collection region. The substrate is doped to have a first conductivity type. The epitaxial layer is disposed over the substrate and doped to have a second conductivity type opposite of the first conductivity type. The light collection region is disposed within the epitaxial layer for collecting photo-generated charge carriers. The light collection region is doped to have the first conductivity type as well. | 10-29-2009 |
| 20090263013 | APPARATUS, SYSTEM, AND METHOD FOR SKIN TONE DETECTION IN A CMOS IMAGE SENSOR - An image sensing system provide feature tone detection. A feature tone detection module receives illumination compensated pixel data. To perform feature tone identification the illumination compensated pixel data is transformed to a color space having hue and saturation and then compared against pre-selected ranges of hue and saturation. Noise filtering is performed using an erosion-dilation process. A bit code is used to identify pixels having a specified feature tone, such as a skin tone. | 10-22-2009 |
| 20090251561 | System and method for adaptive local white balance adjustment - The disclosure describes embodiments of an apparatus comprising an image sensor including a pixel array having a plurality of pixels and an automatic white balance (AWB) circuit coupled to the pixel array. The AWB circuit is used to determine a local white balance component for each pixel, determine a global white balance component for each pixel, and apply a white balance adjustment to each pixel, the applied white balance adjustment comprising a combination of the local white balance component and the global white balance component. The disclosure also describes embodiment of a process including receiving image data from each pixel in a pixel array, determining a local white balance component for the image data from each pixel, determining a global white balance component for the image data from each pixel, and applying a white balance adjustment to the image data from each pixel, the applied white balance adjustment comprising a combination of the local white balance component and the global white balance component. Other embodiments are also disclosed and claimed. | 10-08-2009 |
| 20090243668 | FREQUENCY DIVIDER SPEED BOOSTER - Embodiments of the present invention synthesize a core frequency divider by adding a switching feedback shell and using multiple clock edges to trigger the frequency divider. Feedback logic is used to determine which edge will be used. Embodiments allow multiple recursive use, which boosts the overall speed resulting frequency divider circuit 2 | 10-01-2009 |
| 20090236498 | VARIABLE TRANSFER GATE OXIDE THICKNESS FOR IMAGE SENSOR - A light sensor cell includes a photosensitive element, a floating diffusion region, and a gate oxide disposed between the photosensitive element and the floating diffusion region. The gate oxide has a non-uniform thickness, with a greater thickness near the photosensitive element and a lesser thickness near the floating diffusion region. A transfer gate is disposed on the gate oxide. The transfer gate has a non-uniform threshold voltage, with a greater threshold voltage near the photosensitive element and a lesser threshold voltage near the floating diffusion region. | 09-24-2009 |
| 20090231455 | IMAGE SENSOR APPARATUS AND METHOD FOR EMBEDDING RECOVERABLE DATA ON IMAGE SENSOR PIXEL ARRAYS - An image sensor apparatus is disclosed. The image sensor apparatus includes an image sensor for generating image data in a pixel array corresponding to an optical image. A processor alters the image data to embed a feature-dependent code associated with a feature of the image data in a feature-dependent location in the pixel array and generate a digital image from the altered image data. | 09-17-2009 |
| 20090230394 | Image sensor array with conformal color filters - An image sensor pixel includes a photo-sensor region, a microlens, a first color filter layer, and a second color filter layer. The photo-sensor region is disposed within a semiconductor die. The microlens is disposed on the semiconductor die in optical alignment with the photo-sensor region. The first color filter layer is disposed between the photo-sensor region and the microlens. The second color filter layer is disposed on an opposite side of the microlens as the first color filter layer. | 09-17-2009 |
| 20090201400 | Backside illuminated image sensor with global shutter and storage capacitor - A backside illuminated imaging sensor pixel includes a photodiode region, a pixel circuitry region, and a storage capacitor. The photodiode region is disposed within a semiconductor die for accumulating an image charge. The pixel circuitry region is disposed on the semiconductor die between a frontside of the semiconductor die and the photodiode region. The pixel circuitry region overlaps at least a portion of the photodiode region. The storage capacitor is included within the pixel circuitry region overlapping the photodiode region and is selectively coupled to the photodiode region to temporarily store image charges accumulated thereon. | 08-13-2009 |
| 20090201395 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH REDUCED LEAKAGE PHOTODIODE - A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that includes a photodiode region, an insulator, and a silicide reflective layer. The photodiode region is formed in the frontside of the semiconductor substrate. The insulation layer is formed on the backside of the semiconductor substrate. The transparent electrode formed on the backside of the insulation layer. The transparent electrode allows light to be transmitted through a back surface of the semiconductor substrate such that when the transparent electrode is biased, carriers are formed in a region in the backside of the semiconductor substrate to reduce leakage current. ARC layers can be used to increase sensitivity of the sensor to selected wavelengths of light. | 08-13-2009 |
| 20090201393 | Black reference pixel for backside illuminated image sensor - An imaging sensor pixel array includes a semiconductor substrate, a plurality of active pixels and at least one black reference pixel. The plurality of active pixels are disposed in the semiconductor substrate for capturing an image. Each of the active pixels includes a first region for receiving light including a p-n junction for accumulating an image charge and active pixel circuitry coupled to the first region to readout the image charge. The black reference pixel is also disposed within the semiconductor substrate for generating a black level reference value. The black reference pixel includes a second region for receiving light without a p-n junction and black pixel circuitry coupled to the photodiode region without the p-n junction to readout a black level reference signal. | 08-13-2009 |
| 20090200631 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH LIGHT ATTENUATING LAYER - A backside illuminated imaging sensor includes a semiconductor substrate, a metal interconnect layer and a light attenuating layer. The semiconductor substrate has a front surface, a back surface, and includes at least one imaging pixel formed on the front surface of the semiconductor substrate. The metal interconnect layer is electrically coupled to the imaging pixel and the light attenuating layer is coupled between the metal interconnect layer and the front surface of the semiconductor substrate. In operation, the imaging pixel receives light from the back surface of the semiconductor substrate, where a portion of the received light propagates through the imaging pixel to the light attenuating layer. The light attenuating layer is configured to substantially attenuate the portion of light received from the imaging pixel. | 08-13-2009 |
| 20090200626 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH VERTICAL PIXEL SENSOR - A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light. | 08-13-2009 |
| 20090200625 | BACKSIDE ILLUMINATED IMAGE SENSOR HAVING DEEP LIGHT REFLECTIVE TRENCHES - An array of pixels is formed using a substrate having a frontside and a backside that is for receiving incident light. Each pixel typically includes metallization layers included in the frontside of the substrate, a photosensitive region formed in the backside of the substrate, and a trench formed around the photosensitive region in the backside of the substrate. The trench causes the incident light to be directed away from the trench and towards the photosensitive region. | 08-13-2009 |
| 20090200624 | Circuit and photo sensor overlap for backside illumination image sensor - A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region. | 08-13-2009 |
| 20090200623 | IMAGE SENSOR WITH MICRO-LENSES OF VARYING FOCAL LENGTHS - An image sensor having a plurality of micro-lenses disposed on a semiconductor substrate. A first micro-lens has a different focal length, height, shape, curvature, thickness, etc., than a second micro-lens. The image sensor may be back side illuminated or front side illuminated. | 08-13-2009 |
| 20090200622 | SELF-ALIGNED FILTER FOR AN IMAGE SENSOR - An image sensor includes at least one photosensitive element disposed in a semiconductor substrate. Metal conductors may be disposed on the semiconductor substrate. A filter may be disposed between at least two individual metal conductors and a micro-lens may be disposed on the filter. There may be insulator material disposed between the metal conductors and the semiconductor substrate and/or between individual metal conductors. The insulator material may be removed so that the filter may be disposed on the semiconductor substrate. | 08-13-2009 |
| 20090200590 | IMAGE SENSOR WITH LOW ELECTRICAL CROSS-TALK - An array of pixels is formed using a substrate, where each pixel has a substrate having a backside and a frontside that includes metalization layers, a photodiode formed in the substrate, frontside P-wells formed using frontside processing that are adjacent to the photosensitive region, and an N-type region formed in the substrate below the photodiode. The N-type region is formed in a region of the substrate below the photodiode and is formed at least in part in a region of the substrate that is deeper than the depth of the frontside P-wells. | 08-13-2009 |
| 20090200589 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED INFRARED SENSITIVITY - A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer. | 08-13-2009 |
| 20090200588 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH LIGHT REFLECTING TRANSFER GATE - A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that can include a photodiode region, an insulation layer, and a reflective layer. The photodiode is typically formed in the frontside of the semiconductor substrate. A surface shield layer can be formed on the frontside of the photodiode region. A light reflecting layer can be formed using silicided polysilicon on the frontside of the sensor. The photodiode region receives light from the back surface of the semiconductor substrate. When a portion of the received light propagates through the photodiode region to the light reflecting layer, the light reflecting layer reflects the portion of light received from the photodiode region towards the photodiode region. The silicided polysilicon light reflecting layer also forms a gate of a transistor for establishing a conductive channel between the photodiode region and a floating drain. | 08-13-2009 |
| 20090200587 | Masked laser anneal during fabrication of backside illuminated image sensors - A technique for fabricating an array of imaging pixels includes fabricating front side components on a front side of the array. After fabricating the front side components, a dopant layer is implanted on a backside of the array. A mask is formed over the dopant layer to selectively expose portions of the dopant layer. Next, the exposed portions of the dopant layer are laser annealed. Alternatively, the mask may be disposed over the backside prior to the formation of the dopant layer and the dopants implanted through the exposed portions and subsequently laser annealed. | 08-13-2009 |
| 20090200586 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH SILICIDE LIGHT REFLECTING LAYER - A backside illuminated imaging sensor includes a semiconductor layer, a metal interconnect layer and a silicide light reflecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel that includes a photodiode region is formed within the semiconductor layer. The metal interconnect layer is electrically coupled to the photodiode region and the silicide light reflecting layer is coupled between the metal interconnect layer and the front surface of the semiconductor layer. In operation, the photodiode region receives light from the back surface of the semiconductor layer, where a portion of the received light propagates through the photodiode region to the silicide light reflecting layer. The silicide light reflecting layer is configured to reflect the portion of light received from the photodiode region. | 08-13-2009 |
| 20090200585 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH BACKSIDE P+ DOPED LAYER - A backside illuminated imaging sensor includes a semiconductor layer having a P-type region. A frontside and backside P | 08-13-2009 |
| 20090200580 | Image sensor and pixel including a deep photodetector - What is disclosed is an apparatus comprising a transfer gate formed on a substrate and a photodiode formed in the substrate next to the transfer gate. The photodiode comprises a shallow N-type collector formed in the substrate, a deep N-type collector formed in the substrate, wherein a lateral side of the deep N-type collector extends at least under the transfer gate, and a connecting N-type collector formed in the substrate between the deep N-type collector and the shallow N-type collector, wherein the connecting implant connects the deep N-type collector and the shallow N-type collector. Also disclosed is a process comprising forming a deep N-type collector in the substrate, forming a shallow N-type collector formed in the substrate, and forming a connecting N-type collector in the substrate between the deep N-type collector and the shallow N-type collector, wherein the connecting implant connects the deep N-type collector and the shallow N-type collector. A transfer gate is formed on the substrate next to the deep photodiode, wherein a lateral side of the deep N-type collector extends at least under the transfer gate. Other embodiments are disclosed and claimed. | 08-13-2009 |
| 20090200469 | ALTERNATING ROW INFRARED FILTER FOR AN IMAGE SENSOR - An image sensor includes near-infrared cut filters formed over an array of photosensitive elements in a predetermined pattern. The near-infrared cut filters may be formed over one half of a photosensitive element in a split pixel arrangement, over one half the photosensitive elements in the array, over every other photosensitive element in the array, and/or in a checkerboard pattern. | 08-13-2009 |
| 20090200452 | IMAGE SENSOR WITH BURIED SELF ALIGNED FOCUSING ELEMENT - An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and a buried focusing layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the semiconductor substrate above the optical sensor region. The metal layers include optical pass-throughs aligned to expose an optical path through the stack form a top dielectric layer through to the optical sensor region. The buried focusing layer is disposed over a conforming metal layer of the metal layers within the stack. The buried focusing layer includes a curved surface conformed by the optical pass-through of the conforming metal layer to focus light onto the optical sensor region. | 08-13-2009 |
| 20090194798 | BACKSIDE ILLUMINATED IMAGING SENSOR HAVING A CARRIER SUBSTRATE AND A REDISTRIBUTION LAYER - A backside illuminated imaging sensor includes a semiconductor substrate having a front surface and a back surface. The semiconductor substrate has at least one imaging array formed on the front surface. The imaging sensor also includes a carrier substrate to provide structural support to the semiconductor substrate, where the carrier substrate has a first surface coupled to the front surface of the semiconductor substrate. A redistribution layer is formed between the front surface of the semiconductor substrate and the second surface of the carrier substrate to route electrical signals between the imaging array and a second surface of the carrier substrate. | 08-06-2009 |
| 20090194671 | IMAGE SENSOR REFLECTOR - An array of pixels is formed using a substrate, where each pixel has a substrate having an incident side for receiving incident light, a photosensitive region formed in the substrate, and a reflector having a complex-shaped surface. The reflector is formed in a portion of the substrate that is opposed to the incident side such that light incident on the complex-shaped surface of the reflector is reflected towards the photosensitive region. | 08-06-2009 |
| 20090180570 | HYBRID ON-CHIP REGULATOR FOR LIMITED OUTPUT HIGH VOLTAGE - A driver circuit provides fast settling times, slew rate control, and power efficiency, while reducing the need for large external capacitors. A voltage reference circuit generates a voltage reference signal. A comparator compares the voltage reference signal and a driver output signal and generates an output high voltage control signal. An output driver includes a first and a second switch that are coupled together. The first and second switches are further coupled to generate the driver output signal in response to coupling the output high voltage control signal to the control terminal of the first switch and coupling an input signal to the control terminal of the second switch. | 07-16-2009 |
| 20090174918 | ELECTRICALLY-CONTROLLED, VARIABLE FOCAL LENGTH H-PDLC OPTICAL IMAGING APPARATUS AND METHOD - An optical imaging apparatus having a variable focal length is disclosed. A plurality of holographic polymer dispersed liquid crystal (“H-PDLC”) lenses are arranged in a stack, each lens having a unique focal length. A controller is configured to program a plurality of voltages applied to the plurality of H-PDLC lenses to achieve a plurality of focal lengths, the plurality of focal lengths higher than the plurality of H-PDLC lenses. | 07-09-2009 |
| 20090147098 | IMAGE SENSOR APPARATUS AND METHOD FOR COLOR CORRECTION WITH AN ILLUMINANT-DEPENDENT COLOR CORRECTION MATRIX - An image sensor apparatus is disclosed. The image sensor apparatus includes an image sensor for generating pixel data corresponding to a scene under a scene illuminant. The image sensor apparatus also includes a memory for storing color correction information corresponding to a subset of candidate illuminants. A color correction module in the image sensor apparatus derives an illuminant-dependent color correction matrix based on the color correction information corresponding to the subset of candidate illuminants and applies the illuminant-dependent color correction matrix to the pixel data to generate a color corrected digital image. | 06-11-2009 |
| 20090141975 | IMAGE SENSOR APPARATUS AND METHOD FOR SCENE ILLUMINANT ESTIMATION - An image sensor apparatus is disclosed. The image sensor apparatus includes an image sensor for generating pixel data corresponding to a scene under a scene illuminant and a processor. The processor includes an illuminant estimation module for receiving a subset of the pixel data associated with a subset of a color space and finding a chromaticity trend in the pixel data subset to estimate the scene illuminant. A white balance and color correction module in the processor applies white balance and color correction coefficients to the pixel data according to the estimated scene illuminant. | 06-04-2009 |
| 20090135414 | APPARATUS AND METHOD FOR TESTING IMAGE SENSOR WAFERS TO IDENTIFY PIXEL DEFECTS - An image sensor testing apparatus is disclosed. The image sensor testing apparatus includes an electronic test system having a light source for illuminating an image sensor wafer to generate pixel data and a host processor for receiving the pixel data. An interface card coupled to the electronic test system has a programmable processor for processing the pixel data to generate processed data, the processed data transmitted to and analyzed by the host processor together with the pixel data to detect pixel defects in the image sensor wafer. | 05-28-2009 |
| 20090128660 | LIGHT SOURCE FREQUENCY DETECTION CIRCUIT USING BIPOLAR TRANSISTOR - An apparatus for measuring the power frequency of a light source includes a photo-sensitive transistor, a modulators and a logic unit. The photo-sensitive transistor generates an electrical signal that is responsive to light incident thereon from the light source. The modulator generates a modulated signal based on the electrical signal that toggles at a rate substantially proportional to the power frequency of the light source. The logic unit is coupled to receive the modulated signal and determine its toggling frequency. | 05-21-2009 |
| 20090128232 | SWITCHED-CAPACITOR AMPLIFIER WITH IMPROVED RESET PHASE - A switch-capacitor (“SC”) amplifier includes a two-stage operational amplifier (“OP-AMP”), an input SC network, and a feedback SC network. The two-stage OP-AMP includes a first OP-AMP stage having an output coupled to an input of a second OP-AMP stage. The input SC network is coupled to an input of the first OP-AMP stage. The feedback SC network is configured to selectively couple the output of the first OP-AMP stage to the input of the first OP-AMP stage during a first phase of operation of the scamplifier and to couple an output of the second OP-AMP stage to the input of the first OP-AMP stage during a second phase of operation of the SC amplifier. | 05-21-2009 |
| 20090115971 | DUAL-MODE PROJECTION APPARATUS AND METHOD FOR LOCATING A LIGHT SPOT IN A PROJECTED IMAGE - A dual-mode projection apparatus has a projection module for projecting an image onto a projection surface. An image sensor module captures images of the projection surface and determines spatial and temporal characteristics of a visible light spot superimposed on the projection surface. A communications module transmits the spatial and temporal characteristics of the visible light spot to a remote device for remote control of the device based on the spatial and temporal characteristics of the visible light spot. | 05-07-2009 |
| 20090115722 | APPARATUS AND METHOD FOR TRACKING A LIGHT POINTER - A light pointer apparatus has a light source module for projecting a light beam onto a surface. The light pointer apparatus also has an image sensor module and a transmitter module. The image sensor module detects a position in the surface of a visible light spot generated by the projected light beam striking the surface. The transmitter module transmits the position of the visible light spot to a remote device for remote control of a device. | 05-07-2009 |
| 20090086074 | DUAL MODE CAMERA SOLUTION APPARATUS, SYSTEM, AND METHOD - A camera solution includes an image sensor and an image processing and control system. At least two different operating modes are supported, with one of the modes having a higher dynamic range. Control of the dynamic range is provided at the system level. The system supports statically or dynamically selecting an operating mode that determines the dynamic range of a camera. In one implementation, the system supports the use of either a conventional image sensor that does not natively support a high dynamic range or a dual-mode image sensor. | 04-02-2009 |
| 20090073274 | IMAGE SENSOR APPARATUS AND METHOD FOR IMPROVED DYNAMIC RANGE WITH MULTIPLE READOUT CIRCUIT PATHS - An image sensor apparatus comprises an image sensor for generating digital images having a high dynamic range. The image sensor apparatus includes an image sensor for generating a first and a second set of digital image samples at a first bit depth, with each set of digital image samples generated by a different column readout circuit path. A processor combines the first and second set of digital image samples to generate a digital image at a second bit depth, the second bit depth higher than the first bit depth. | 03-19-2009 |
| 20090066799 | IMAGE SENSOR APPARATUS AND METHOD FOR EMBEDDING IMAGE STABILIZATION DATA INTO IMAGE DATA - An image sensor apparatus comprises an image sensor for generating image data corresponding to an optical image. A movement sensor coupled to the image sensor generates movement data corresponding to movement of the image sensor apparatus. A processor coupled to the image sensor receives embedded image data from the image sensor, where the embedded image data includes the movement data embedded into the image data. The processor processes the embedded image data to generate a movement-compensated digital image. | 03-12-2009 |
| 20090059048 | IMAGE SENSOR WITH HIGH DYNAMIC RANGE IN DOWN-SAMPLING MODE - An image sensor has an array of photo-sensitive pixels and supports a line-by-line read out of rows. In a normal resolution each row has the same nominal gain and exposure time. In a down-sampling mode the exposure times of the rows are varied according to an alternating sequence having at least two different exposure times. During down-sampling, raw pixel data from rows with different exposure times is combined to simultaneously achieve down-sampling and a high dynamic range. | 03-05-2009 |
| 20080318358 | IMAGE SENSOR PIXEL HAVING PHOTODIODE WITH INDIUM PINNING LAYER - An active pixel using a pinned photodiode with a pinning layer formed from indium is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N | 12-25-2008 |
| 20080225160 | Mobile Devices Having An Image Sensor For Charging A Battery - Mobile devices and methods of operating mobile devices are disclosed herein. In one embodiment, a mobile device includes a rechargeable battery, a battery charger electrically coupled to the battery, and an image sensor operably coupled to the battery charger to selectively charge the battery. As such, the image sensor is configured to capture images and provide current to charge the battery. The image sensor can be a CMOS image sensor or a CCD image sensor. The mobile device may further include a housing, with the battery, battery charger, and image sensor contained within the housing. | 09-18-2008 |
