OERLIKON SOLAR AG, TRUEBBACH Patent applications |
Patent application number | Title | Published |
20130052369 | PLASMA REACTOR - A plasma reactor with a recipient ( | 02-28-2013 |
20120325284 | THIN-FILM SILICON TANDEM SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - The photovoltaic cell comprises, deposited on a transparent substrate in the following order: a first conductive oxide layer; a first p-i-n junction; a second p-i-n junction; a second conductive oxide layer, wherein said first conductive oxide layer is substantially transparent and comprises a low-pressure chemical vapor deposited ZnO layer; and said second conductive oxide layer comprises an at least partially transparent low-pressure chemical vapor deposited ZnO layer; and wherein said first p-i-n junction comprises in the following order: a layer of p-doped a-Si:H deposited using PECVD and having at its end region facing toward said second p-i-n junction a higher band gap than at its end region facing toward said first conductive oxide layer; a buffer layer of a-Si:H deposited using PECVD without voluntary addition of a dopant; a layer of substantially intrinsic a-Si:H deposited using PECVD; a first layer of n-doped a-Si:H deposited using PECVD; and a layer of n-doped μc-Si:H deposited using PECVD; and wherein said second p-i-n junction comprises in the following order a layer of p-doped μc-Si:H deposited using PECVD; a layer of substantially intrinsic μc-Si:H deposited using PECVD; and a second layer of n-doped a-Si:H deposited using PECVD. The photovoltaic converter panel comprises at least one such photovoltaic cell. | 12-27-2012 |
20120270362 | NEW INTRINSIC ABSORBER LAYER FOR PHOTOVOLTAIC CELLS - So as to manufacture an intrinsic absorber layer of amorphous hydrogenated silicon within a p-i-n configuration a solar cell by PeCvD deposition upon a base structure, thereby improving throughput an simultaneously maintaining quality of the absorber layer, a specific processing regime is proposed, wherein in the reactor for depositing the addressed absorber layer a pressure of between 1 mbar and 1.8 mbar is established and a flow of silane and of hydrogen with a dilution of silane to hydrogen of 1:4 up to 1:10 and generating an RF plasma with a generator power of between 600W and 1200W per 1.4 m | 10-25-2012 |
20120255613 | PHOTOVOLTAIC CELL AND METHODS FOR PRODUCING A PHOTOVOLTAIC CELL - A photovoltaic cell ( | 10-11-2012 |
20120227799 | HIGH EFFICIENCY MICROMORPH TANDEM CELLS - A method for manufacturing a micromorph tandem cell is disclosed. The micromorph tandem cell comprises a μc-Si:H bottom cell and an a-Si:H top cell, an LPCVD ZnO front contact layer and a ZnO back contact in combination with a white reflector. The method comprises the steps of
| 09-13-2012 |
20120031482 | PHOTOVOLTAIC CELL AND METHODS FOR PRODUCING A PHOTOVOLTAIC CELL - A photovoltaic device is provided that includes a substrate, a first transparent conductive layer positioned on the substrate, a plurality of transparent conductive rods positioned on the first transparent conductive layer and having a growth direction, the growth direction extending in a direction away from the substrate, a photovoltaically active layer covering the plurality of transparent conductive rods rods and a conductive layer positioned on the photovoltaically active layer. | 02-09-2012 |
20110259410 | THIN-FILM SILICON TANDEM CELL - A thin-film tandem photovoltaic cell comprises on a glass substrate a front TCO ( | 10-27-2011 |
20110253207 | SOLAR CELL DEVICE AND METHOD FOR MANUFACTURING SAME - It is an object of the present invention to enlarge flexibility with, respect to material selection for transparent conductive oxide layers within a solar cell device especially in view of the respective, material-specific vacuum deposition processes. This object is resolved by a solar cell device which comprises at least one thin film solar cell and an electrically conductive, transparent oxide layer wherein the addressed electrically conductive, transparent oxide layer is of doped TiOx. | 10-20-2011 |
20110232689 | METHOD FOR CLEANING A VACUUM PUMP - A method for cleaning a vacuum pump ( | 09-29-2011 |
20110217806 | RADIOFREQUENCY PLASMA REACTOR AND METHOD FOR MANUFACTURING VACUUM PROCESS TREATED SUBSTRATES - An electrode ( | 09-08-2011 |
20110180142 | ELECTRICAL AND OPTICAL PROPERTIES OF SILICON SOLAR CELLS - The method for manufacturing a photovoltaic cell or a photovoltaic converter panel comprises depositing a layer of p-doped amorphous silicon using a gas mixture comprising silane, methane, hydrogen and trimethylboron in a ratio of 1:2:2:1.25. In particular, plasma-enhanced chemical vapor deposition is used for the deposition. The corresponding photovoltaic cells and photovoltaic converter panels are also described. | 07-28-2011 |
20110180124 | PHOTOVOLTAIC CELL AND METHOD OF MANUFACTURING A PHOTOVOLTAIC CELL - A photovoltaic cell comprises an electrode layer ( | 07-28-2011 |
20110129954 | METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL STRUCTURE - In the frame of photovoltaic cell manufacturing a silicon compound layer is deposited upon a carrier structure. Manufacturing flexibility is increased on one hand by incorporating ambient air exposure of such silicon compound layer and on the other preventing deterioration of reproducibility by such ambient air exposure by enriching the surface of the addressed silicon compound layer which is to be exposed to ambient air to an oxygen enrichment. | 06-02-2011 |
20110057276 | METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL STRUCTURE - In the frame of manufacturing a photovoltaic cell a layer ( | 03-10-2011 |