| 20100102402 | METHOD OF FABRICATING A TRANSISTOR WITH SEMICONDUCTOR GATE COMBINED LOCALLY WITH A METAL - A method of forming a field effect transistor comprising a gate formed on an insulating layer, the gate having, in a zone in contact with the insulating layer, a semiconducting central zone and lateral zones in the length of the gate, the method comprising forming a gate comprising a portion of insulating layer, a portion of semiconducting layer formed over the insulating layer, and a portion of mask layer formed over the semiconducting layer; performing an etching of the portion of the mask layer such that only a portion in the centre of the gate remains; and reacting the semiconducting gate with a metal deposited over the gate. | 04-29-2010 |
