| NuFlare Technology, Inc. Patent applications |
| Patent application number | Title | Published |
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| 20130099139 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a unit to calculate a gradient of a convolution amount that is calculated from a convolution operation between an area density and a distribution function, a unit to calculate a small influence radius phenomenon dose correction coefficient that corrects for dimension variation due to a phenomenon whose influence radius is on an order of microns or less, by using the convolution amount and the gradient, a unit to calculate a proximity effect dose correction coefficient that corrects for dimension variation due to a proximity effect, by using a first function depending on the small influence radius phenomenon dose correction coefficient, a unit to calculate a dose by using the proximity effect dose correction coefficient and the small influence radius phenomenon dose correction coefficient, and a unit to write a figure pattern concerned on a target object, based on the dose. | 04-25-2013 |
| 20130094752 | DEFECT ESTIMATION DEVICE AND METHOD AND INSPECTION SYSTEM AND METHOD - Acquired mask data of a defect portion is sent to a simulated repair circuit | 04-18-2013 |
| 20130093878 | DEFECT ESTIMATION DEVICE AND METHOD AND INSPECTION SYSTEM AND METHOD - Acquired mask data of a defect portion is sent to a simulated repair circuit | 04-18-2013 |
| 20130084690 | MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE - A semiconductor device manufacturing apparatus includes a chamber in which a wafer is loaded; a first gas supply unit for supplying a process gas into the chamber; a gas exhaust unit for exhausting a gas from the chamber; a wafer support member on which the wafer is placed; a ring on which the wafer support member is placed; a rotation drive control unit connected to the ring to rotate the wafer; a heater disposed in the ring and comprising a heater element for heating the wafer to a predetermined temperature and including an SiC layer on at least a surface, and a heater electrode portion molded integrally with a heater element and including an SiC layer on at least a surface; and a second gas supply unit for supplying an SiC source gas into the ring. | 04-04-2013 |
| 20130083318 | PATTERN INSPECTION APPARATUS AND PATTERN INSPECTION METHOD - A pattern inspection apparatus in accordance with one aspect of the present invention includes a laser light source configured to emit a laser light, an integrator lens configured to input the laser light, and form a light source group by dividing the laser light inputted, a scattering plate, arranged at a front side of an incident surface of the integrator lens, configured to scatter the laser light which is to enter the integrator lens, and an inspection unit configured to inspect a defect of a pattern on an inspection target object where a plurality of figure patterns are formed, by using the laser light having passed through the integrator lens as an illumination light. | 04-04-2013 |
| 20130082193 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus according to one aspect of the present invention includes a substrate cover attachment/detachment unit to attach or detach a substrate cover that covers a whole periphery of a substrate being a writing target from an upper part, to/from the substrate, a writing unit to write a pattern on the substrate, in a state where the substrate cover is attached to the substrate, by a charged particle beam, a position measurement unit, before and after writing by the writing unit, to measure a position of the substrate cover in a state attached to the substrate, at a predetermined measurement position, and a correction unit, with respect to a position of the substrate to which the substrate cover is attached, to correct a positional deviation amount between a position of the substrate cover measured after writing and a position of the substrate cover measured before writing. | 04-04-2013 |
| 20130082187 | MULTI CHARGED PARTICLE BEAM WRITING APPARATUS AND MULTI CHARGED PARTICLE BEAM WRITING METHOD - A multi charged particle beam writing apparatus according to one aspect of the present invention includes a first aperture member to form multiple beams, a blanker array provided with a plurality of blankers which respectively perform blanking deflection of a corresponding beam in the multiple beams, a first electromagnetic lens and a second electromagnetic lens arranged between the first aperture member and the blanker array, a second aperture member arranged between the first electromagnetic lens and the second electromagnetic lens and at a position of a convergence point of the multiple beams and configured to restrict passage of charged particles deviated from the convergence point, and a third aperture member to block each beam which was deflected to be in a beam off state by the plurality of blankers. | 04-04-2013 |
| 20130065184 | CHARGED PARTICLE BEAM DRAWING METHOD AND CHARGED PARTICLE BEAM DRAWING APPARATUS - A charged particle beam drawing method according to an embodiment is a method including forming a first measurement pattern in a first measurement pattern area; in succession with processing of forming the first measurement pattern, forming a second measurement pattern in a second measurement pattern area located farthest from the first measurement pattern area in the same column as the first measurement pattern area; and in moving a charged particle beam from the second measurement pattern area to a third measurement pattern area located adjacent to the first measurement pattern area in the same column as the first and second measurement patterns to form a third measurement pattern, moving the charged particle beam to the third measurement pattern area while taking tiny shots approximately equivalent to a data resolution at the adjacent measurement pattern areas to be drawn in the same column one after another from the second measurement pattern. | 03-14-2013 |
| 20130056647 | MULTI CHARGED PARTICLE BEAM WRITING APPARATUS AND MULTI CHARGED PARTICLE BEAM WRITING METHOD - In accordance with one aspect of this invention, a multi charged particle beam writing apparatus includes an aperture member, in which a plurality of openings are formed, configured to form multi-beams by making portions of the charged particle beam pass through the plurality of openings; a plurality of blankers configured to perform blanking-deflect regarding beams corresponding to the multi-beams; a writing processing control unit configured to control writing processing with a plurality of beams having passed through different openings among the plurality of openings being irradiated on the target object at a predetermined control grid interval; and a dose controlling unit configured to variably control a dose of a beam associated with deviation according to a deviation amount when an interval between the plurality of beams irradiated is deviated from the control grid interval. | 03-07-2013 |
| 20130056645 | MULTI CHARGED PARTICLE BEAM WRITING APPARATUS AND MULTI CHARGED PARTICLE BEAM WRITING METHOD - In accordance with one aspect of this invention, a multi charged particle beam writing apparatus includes an aperture member, in which a plurality of openings are formed, configured to form multi-beams by making portions of the charged particle beam pass through the plurality of openings; a writing processing control unit configured to control writing processing so that a plurality of beams having passed through different openings among the plurality of openings are arranged to align on the target object; and a shot interval adjusting unit configured to adjust shot intervals among beams so that a maximum shot interval among beams being a control grid interval defined by a predetermined quantization size or a size which is prescribed within a predetermined range from the predetermined quantization size, or less when the shot intervals among beams which are arranged to align on the target object are different depending on a place. | 03-07-2013 |
| 20130044205 | PATTERN INSPECTION APPARATUS AND PATTERN INSPECTION METHOD - A pattern inspection method according to one aspect of the present invention includes generating a first positional deviation amount map by using data acquired by a pre-scan, generating a second positional deviation amount map by using data acquired by a full scan, generating a first positional deviation difference map by calculating a difference between the first positional deviation amount map and the second positional deviation amount map, generating a third positional deviation amount map from the first positional deviation difference map and the second positional deviation amount map, and judging existence of a value exceeding an allowable value, in values defined by the third positional deviation amount map. | 02-21-2013 |
| 20130037724 | CHARGED PARTICLE BEAM DRAWING APPARATUS AND CHARGED PARTICLE BEAM DRAWING METHOD - A charged particle beam drawing apparatus of an embodiment includes: a drawing unit to perform drawing on a workpiece on a stage by using a charged particle beam; multiple marks located on the stage and having different heights; an irradiation position detector to, when any of the marks is irradiated with the charged particle beam, detect an irradiation position of the charged particle beam on a mark surface of the mark; a drift-amount calculation unit to calculate a drift amount of the charged particle beam on the mark surface by using the irradiation position; a drift-amount processing unit to obtain a drift amount on a workpiece surface by using the drift amounts on at least two of the mark surfaces; and a drawing controller to correct an is irradiation position of the charged particle beam by using the drift amount on the workpiece surface. | 02-14-2013 |
| 20130010291 | APPARATUS AND METHOD FOR PATTERN INSPECTION - A pattern inspection apparatus includes a light source, a stage configured to mount thereon a substrate with a pattern formed thereon, a first laser measuring unit configured to measure a position of the stage by using a laser beam, a sensor configured to capture a pattern image obtained from the pattern, formed on the substrate, irradiated by light from the light source, an optical system configured to focus the pattern image on the sensor, a second laser measuring unit configured to measure a position of the optical system by using a laser beam, a correction unit configured to correct a captured pattern image by using a difference between the position of the stage and the position of the optical system, and an inspection unit configured to inspect whether there is a defect of the pattern by using a corrected pattern image. | 01-10-2013 |
| 20120307043 | INSPECTION APPARATUS AND METHOD - An inspection apparatus and method comprising a unit for acquiring an optical image of an object to be inspected by irradiating the object with light, wherein the unit includes a line sensor comprising a plurality of sensors linearly arranged in a row, a generating unit for generating a reference image from design data of the object to be inspected, a comparing unit for comparing the optical image with the reference image, a unit for storing data of three lines acquired by the line sensor, and calculating differences between a gradation value of a pixel on a center line and each gradation value of the eight pixels adjacent to the pixel determining if the pixel is a defect if all of the eight differences of the adjacent pixels are more than a predetermined threshold. | 12-06-2012 |
| 20120292537 | CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD OF SAME - A charged particle beam writing apparatus, includes a unit to input information about a stripe region height, and to judge, when a write region is divided into stripe regions in a thin rectangular shape by the stripe region height, whether a height of a last stripe region is narrower than the stripe region height; and a unit to divide the write region into stripe regions in the thin rectangular shape in such a way that the last stripe region and a stripe region prior to the last stripe region are combined to create one stripe region and stripe regions at least two stripe regions prior to the last stripe region are each created as stripe regions of the stripe region height if the height of the last stripe region is narrower than the stripe region height. | 11-22-2012 |
| 20120292536 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a unit to divide a chip region into first data processing blocks, a unit to, in each block, extract a cell whose reference position is located in the block concerned from cells each including at least one figure pattern, a unit to, for each block, generate a first frame that surrounds the block concerned and the cell extracted, a unit to, for each first frame, divide the inside of the first frame concerned into mesh regions and calculate an area density of a figure pattern in each mesh, a unit to combine area densities of mesh regions which are overlapped with each other and between different first frames, a unit to calculate a dose of beam by using the area density, and a unit to write a pattern on a target workpiece by irradiating the beam of the dose calculated. | 11-22-2012 |
| 20120286174 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A writing apparatus wherein, for each figure pattern representative of a chip, the figure patterns are divided into shot figures represented by shot division image information for discriminating a size of each of the shot figures and an arrangement position in each of the figure patterns of each of the shot figures. Using the shot division image information and information on alignment coordinates of each of the figure patterns, an allotting processing unit allots each of the shot figures to be arranged in each of mesh regions virtually divided by a predetermined size from a reference position different from an end portion of a figure pattern concerned in a chip region. For each of the mesh regions, there is calculated a number of shots of the beam used when writing inside of a mesh region concerned based on the number of allotted shot figures. | 11-15-2012 |
| 20120252215 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE, PATTERN WRITING APPARATUS, RECORDING MEDIUM RECORDING PROGRAM, AND PATTERN TRANSFER APPARATUS - A method for fabricating a semiconductor device, includes dividing a pattern region of a desired pattern that is to be formed on a semiconductor substrate into a plurality of sub-regions; calculating combination condition including a shape of illumination light for transferring and a mask pattern obtained by correcting a partial pattern in the sub-region of the desired pattern formed on a mask used during transferring for each of the plurality of sub-regions, to make a dimension error of the partial pattern of each of the plurality of sub-regions smaller when transferred to the semiconductor substrate; and forming the desired pattern by making multiple exposures on the semiconductor substrate in such a way that the partial patterns of the sub-regions divided are sequentially transferred by transferring a pattern to the semiconductor substrate using the combination conditions calculated for each of the sub-regions. | 10-04-2012 |
| 20120248340 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a division/distribution processing unit to divide and distribute processed data into data groups each having an approximately equal data amount respectively, transmitting units to transmit the processed data of the groups such that processed data is transmitted in descending order with respect to order of writing processing for each data group and the groups are transmitted in parallel, memories to store the processed data of the groups such that each of the memories stores processed data of each different one of the groups, a writing order data output unit to output them, regardless of data group and in order of writing processing, and a writing unit to write a pattern on a target workpiece with a charged particle beam, based on the processed data output in the order of writing processing. | 10-04-2012 |
| 20120244685 | Manufacturing Apparatus and Method for Semiconductor Device - A semiconductor manufacturing apparatus includes: a plurality of reaction chambers into which wafers are introduced and deposition process is performed; a material gas supply mechanism that includes a plurality of material gas supply lines that respectively supply a material gas to the plurality of reaction chambers and a flow rate control mechanism that controls a flow rate of the marital gas in the material gas supply lines; a carrier gas supply mechanism that includes a plurality of carrier gas supply lines that respectively supplies a carrier gas into the plurality of reaction chambers; and a material gas switching mechanism that intermittently opens and closes the plurality of material gas supply lines respectively so that at least one of the plurality of material gas supply lines comes to be in an opened state at a same time, and sequentially switches the reaction chamber to which the material gas is supplied. | 09-27-2012 |
| 20120211676 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes an unit to measure height positions of a substrate, an unit to input a position dependent height distribution obtained by converting each position error of a pattern generated depending on each corresponding writing position of the substrate into a value in a height direction, and to add the position dependent height distribution to a height distribution obtained based on the height positions in order to correct the height distribution of the substrate, an unit to calculate a deflection shift amount of a pattern to be written by using a corrected height distribution, an unit to calculate a deflection amount for deflecting a beam to a position where a calculated deflection shift amount has been corrected, and an unit to write a pattern on the substrate by deflecting the beam by a calculated deflection amount. | 08-23-2012 |
| 20120211674 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a storage unit to store each pattern data of plural figure patterns arranged in each of plural small regions made by virtually dividing a writing region of a target workpiece to be written on which resist being coated. The charged particle beam writing apparatus further including an assignment unit to assign each pattern data of each figure pattern to be arranged in each of the plural small regions concerned, and a writing unit to write, for each of plural groups, each figure pattern in each of the plural small regions concerned by using a charged particle beam. | 08-23-2012 |
| 20120193553 | CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD - A charged-particle beam writing apparatus used for writing a predetermined pattern on a sample placed on a stage with a charged-particle beam. The apparatus comprises a height measuring unit that measures a height of the sample by irradiating the sample with light and receiving light reflected from the sample, and a control unit that receives either of height data acquired from a height data map prepared based on values measured by the height measuring unit before writing and height data measured by the height measuring unit during writing, thereby adjust an irradiation position of the charged-particle beam on the sample. | 08-02-2012 |
| 20120189032 | ILLUMINATING APPARATUS, PATTERN INSPECTION APPARATUS, AND METHOD OF FORMING ILLUMINATING LIGHT - An illuminating apparatus includes a rotating phase plate having a height equal to or less than a wavelength of light from a light source and including a plurality of randomly arranged step regions so as to change a phase of light from the light source by allowing the light beam to pass therethrough; and a fly's eye lens including an array of a plurality of lenses configured to pass the light beam passed through the rotating phase plate, wherein a portion in which a product of a maximum size of the plurality of step regions and an optical magnification from the rotating phase plate to a plane of incidence of the fly's eye lens is equal to or less than an arrangement pitch of the plurality of lenses and a portion in which the product is larger than the arrangement pitch of the plurality of lenses are mixed. | 07-26-2012 |
| 20120187307 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a plurality of tracking calculation units to calculate a deflection amount of the charged particle beam in regard to a movable substrate, a switching unit for each of a plurality of virtual small regions of the substrate, to input an end signal indicating completion of charged particle beam emission to a respective small region, and to switch from output of one of the tracking calculation units to output of another of the tracking calculation units, and a deflector, while a substrate is moving, to deflect the charged particle beam to an n-th small region, based on an output from one of the tracking calculation units before switching and to deflect the charged particle beam to an (n+1)th small region based on an output from another of tracking calculation units after switching the plurality of tracking calculation units. | 07-26-2012 |
| 20120140060 | INSPECTION APPARATUS AND METHOD - An inspection apparatus and method, which can perform defect determination and estimate a defect on a mask and the resultant influence on a wafer. Each of the transfer images is reviewed in order of following (1) to (3):
| 06-07-2012 |
| 20120126145 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a storage unit configured to store writing data in which there are defined a plurality of figures and resizing information indicating, with respect to each of the plurality of figures, a resizing status whether or not to perform resizing and a resizing direction used when performing resizing, a judgment determination unit configured to input the writing data and judge, with respect to each of the plurality of figures, the resizing status whether or not to perform resizing and the resizing direction used when performing resizing, a resize processing unit configured to resize, with respect to each of the plurality of figures, a dimension of a figure concerned in a judged resizing direction when it is judged to perform resizing, and a writing unit configured to write a pattern onto a target workpiece with using a resized figure and a charged particle beam. | 05-24-2012 |
| 20120108063 | BEAM DOSE COMPUTING METHOD AND WRITING METHOD AND RECORD CARRIER BODY AND WRITING APPARATUS - A beam dose computing method includes dividing a surface area of a target object into include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions to create a map of base doses of the beam in respective of said second regions and to prepare a map of proximity effect correction coefficients in respective of said second regions, using the maps to determine second corrected doses of the beam for proximity effect correction in the third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object. | 05-03-2012 |
| 20120104286 | METHOD FOR RESIZING PATTERN TO BE WRITTEN BY LITHOGRAPHY TECHNIQUE, AND CHARGED PARTICLE BEAM WRITING METHOD - A method for resizing a pattern to be written by using lithography technique includes calculating a first dimension correction amount of a pattern for correcting a dimension error caused by a loading effect, for each small region made by virtually dividing a writing region of a target workpiece into meshes of a predetermined size, based on an area density of the each small region, calculating a second dimension correction amount in accordance with a line width dimension of the pattern to be written in the each small region, correcting the first dimension correction amount by using the second dimension correction amount, and resizing the line width dimension of the pattern by using a corrected first dimension correction amount, and outputting a result of the resizing. | 05-03-2012 |
| 20120085940 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a shot division unit configured to divide a figure defined in layout data into a plurality of shot figures each having a size which can be irradiated by one shot of a charged particle beam, a shot data generating unit configured to generate each shot data for each shot figure of the plurality of shot figures, where a number of times of generating the each shot data equals a number of times of multiple writing of the each shot figure of the plurality of shot figures, such that multiplicity of the multiple writing is variable per the each shot figure, and a writing unit configured to perform the multiple writing of the each shot figure onto a target workpiece, in accordance with the number of times of the each shot data generated for the each shot figure, using a charged particle beam. | 04-12-2012 |
| 20120081538 | PATTERN INSPECTION APPARATUS - This pattern inspection apparatus includes an inspection region information storage unit that stores an inspection region specified in a pattern region, a pattern surface height detection unit that detects a pattern surface height signal corresponding to a pattern surface height measurement position on the inspection sample, an autofocus mechanism that focuses on the inspection sample using the pattern surface height signal detected by the pattern surface height detection unit, a determination unit, and an autofocus mechanism control unit. When the determination unit determines that the pattern surface height measurement position is located within the inspection region, the autofocus mechanism control unit drives the autofocus mechanism, and the determination unit determines that the pattern surface height measurement position is not located within the inspection region, the autofocus mechanism control unit stops the autofocus mechanism. | 04-05-2012 |
| 20120068089 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a unit calculating a total charge amount of charged particle beams irradiating each minimum deflection region in deflection regions having different deflection sizes respectively deflected by deflectors of a plurality of levels for deflecting charged particle beams, a unit calculating a representative temperature of the each minimum deflection region based on heat transfer from other minimum deflection regions having been written before the each minimum deflection region is written, a unit inputting a first dose of a shot of each charged particle beam irradiating the each minimum deflection region, and modulating the first dose by using the representative temperature of the each minimum deflection region, and a unit including the deflectors of a plurality of levels and writing a pattern in the each minimum deflection region with a second dose, which has been modulated, by using the deflectors of a plurality of levels. | 03-22-2012 |
| 20120036486 | METHOD FOR RESIZING PATTERN TO BE WRITTEN BY LITHOGRAPHY TECHNIQUE, AND CHARGED PARTICLE BEAM WRITING METHOD - A method for resizing a pattern to be written by using lithography technique includes calculating a first dimension correction amount of a pattern for correcting a dimension error caused by a loading effect, for each small region made by virtually dividing a writing region of a target workpiece into meshes of a predetermined size, based on an area density of the each small region, calculating a second dimension correction amount in accordance with a line width dimension of the pattern to be written in the each small region, correcting the first dimension correction amount by using the second dimension correction amount, and resizing the line width dimension of the pattern by using a corrected first dimension correction amount, and outputting a result of the resizing. | 02-09-2012 |
| 20120007002 | CHARGED PARTICLE BEAM PATTERN FORMING APPARATUS AND CHARGED PARTICLE BEAM PATTERN FORMING METHOD - A charged particle beam pattern forming apparatus, includes a charge amount distribution calculation unit configured to calculate a charge amount distribution charged by vertical incidence of a charged particle beam on a pattern forming region of a target object; a position correction unit configured to calculate, using the charge amount distribution charged, a corrected position of each pattern forming position corrected for a misregistration amount including a misregistration amount dependent on a deflection position where the charged particle beam is deflected, the misregistration amount caused by an amount of charge; and a pattern generator configured to form a pattern in the corrected position by using the charged particle beam. | 01-12-2012 |
| 20120001097 | CHARGED PARTICLE BEAM DRAWING APPARATUS AND CONTROL METHOD THEREOF - A charged particle beam drawing apparatus applies a predetermined dose of a charged particle beam for drawing patterns corresponding to figures included in a drawing data, in a whole of a drawing area of a workpiece, before a result of calculation of a fogging effect correction dose is obtained, wherein a proximity effect correction dose is incorporated in the predetermined dose, and the fogging effect correction dose is not incorporated in the predetermined dose, then, the charged particle beam drawing apparatus applies a predetermined dose of the charged particle beam for drawing the patterns which overlap the patterns drawn before the result of calculation of the fogging effect correction dose is obtained, in the whole of the drawing area of the workpiece, after the calculation of the fogging effect correction dose, wherein the proximity effect correction dose and the fogging effect correction dose are incorporated in the predetermined dose. | 01-05-2012 |
| 20110291029 | CHARGED PARTICLE BEAM DRAWING APPARATUS AND CONTROL METHOD THEREOF - In a charged particle beam drawing apparatus, if at least one of calculating portions is free and at least one memory includes a free portion, a report that a next process can be additionally started by using at least one free calculating portion and the free portion of the memory, is transferred from a daemon to a writing control unit, and the next process is additionally started by the daemon on the basis of a start request transferred from the writing control unit to the daemon. If there is a possibility of a shortage of the calculating portions and the memory, and if a start request for starting a next process is transferred from the writing control unit to the daemon, the start request for starting the next process is refused by the daemon. | 12-01-2011 |
| 20110286319 | CHARGED PARTICLE BEAM WRITING APPARATUS, WRITE DATA CREATION METHOD AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus according to an embodiment, includes a storage device configured to store write data which is to be written by using a charged particle beam and in which a plurality of patterns with different writing precision is defined; a cutout unit configured to read data of each pattern from the storage device and to cut out a partial pattern, among a pattern, in the plurality of patterns, whose writing precision is on a low-precision side, positioned within a range of influence of a proximity effect from a region edge of a pattern, in the plurality of patterns, whose writing precision is on a high-precision side; a merge processing unit configured to perform merge processing of a cut-out partial pattern on the low-precision side and the pattern on the high-precision side; and a pattern writing unit configured to write a pattern obtained by the merge processing and a remaining partial pattern on the low-precision side remaining without being merged with the pattern on the high-precision side to a target object by using the charged particle beam under different writing conditions based on data of the pattern obtained by the merge processing and data of the remaining partial pattern. | 11-24-2011 |
| 20110255770 | INSPECTION SYSTEM AND METHOD FOR INSPECTING LINE WIDTH AND/OR POSITIONAL ERRORS OF A PATTERN - A method and system for imaging an object to be inspected and obtaining an optical image; creating a reference image from design pattern data; preparing an inspection recipe including one or more templates and parameter settings necessary for the inspection; checking the pattern and the template against each other, and selecting the reference image which corresponds to the template; detecting first and second edges in the selected reference image in accordance with the parameter setting using determined coordinates as a reference; detecting first and second edges in the optical image, this optical image corresponds to the selected reference image; and determining an inspection value by acquiring the difference between the line width of the optical image and the reference image using the first edge and second edge of the reference image and the first edge and second edges of the optical image. | 10-20-2011 |
| 20110255388 | PATTERN WRITING SYSTEM AND METHOD AND ABNORMALITY DIAGNOSING METHOD - Reflected and scattered electrons generated by emitting an electron beam onto a substrate are detected by a detecting unit. The product of the area (S | 10-20-2011 |
| 20110253912 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A beam writing apparatus according to an embodiment includes a selection unit configured to select a dose equation from a plurality of dose equations for calculating a dose of a beam, for each small region of a plurality of small regions made by virtually dividing a writing region of a target workpiece into mesh-like regions, a dose calculation unit configured to calculate a dose of a beam which is shot into a small region of the plurality of small regions, by using a selected dose equation, for the each small region, and a writing unit configured to write a desired pattern in the small region, by using a calculated dose, for the each small region. | 10-20-2011 |
| 20110231134 | CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD THEREFOR - A charged particle beam writing apparatus includes a reading unit to read an identifier (ID) from a substrate where an absorber film which absorbs extreme ultraviolet (EUV) light is formed and the identifier which can be optically read is formed, a storage unit to store defect position information indicating a position of a defect on the substrate based on reference marks, defect size information indicating a size of the defect, which are corresponding to the identifier, and pattern data for writing, an examination unit to input partial pattern data corresponding to a region including at least the defect in the pattern data, the defect position information based on reference marks, and the defect size information, and to examine whether a pattern layout is formed such that the defect is located in a region where the absorber film remains after patterning, and a writing unit to write a pattern on the substrate using a charged particle beam, based on the pattern data in which the pattern layout is formed such that the defect is located in the region where the absorber film remains after patterning. | 09-22-2011 |
| 20110188734 | DEFECT ESTIMATION DEVICE AND METHOD AND INSPECTION SYSTEM AND METHOD - Acquired mask data of a defect portion is sent to a simulated repair circuit | 08-04-2011 |
| 20110186744 | CHARGED PARTICLE BEAM APPARATUS AND METHOD - A first aperture | 08-04-2011 |
| 20110176719 | INSPECTION SYSTEM AND METHOD - Optical image data of a mask is acquired. Reference image data associated with the optical images is created from design pattern data. Regional image data that includes pixel values denoted by multi-valued resolution based on importance level information of the patterns is created from region data including at least one portion of the patterns defined in the design pattern data. Defect determination is conducted on a pixel-by-pixel basis by comparing the optical image data with the reference image data, by means of either a plurality of threshold values determined by each pixel value within the regional image data or a plurality of defect determination methods. Image data of a section whose Mask Error Enhancement Factor (MEEF) is equal to or greater than a predetermined value is created from the region data including at least one portion of the patterns defined in the design pattern data. | 07-21-2011 |
| 20110155930 | SUBSTRATE COVER AND CHARGED PARTICLE BEAM WRITING METHOD USING SAME - A substrate cover | 06-30-2011 |
| 20110121208 | CHARGED PARTICLE BEAM DRAWING APPARATUS AND ELECTRICAL CHARGING EFFECT CORRECTION METHOD THEREOF - A charged particle beam drawing apparatus calculates a pattern area density distribution by using a central processing unit, calculates a dose distribution by using the central processing unit, calculates an irradiation amount distribution by using the central processing unit, performs a convolution calculation of the irradiation amount distribution and a fogging charged particle distribution by using a high speed processing unit, a processing speed of the high speed processing unit being higher than a processing speed of the central processing unit, calculates an irradiation time by using the central processing unit, calculates an elapsed time by using the central processing unit, calculates an electrical charging amount distribution by using the central processing unit, and performs a convolution calculation of the electrical charging amount distribution and a position deviation response function by using the high speed processing unit. | 05-26-2011 |
| 20110091099 | REVIEW APPARATUS AND INSPECTION SYSTEM - A review apparatus comprises: means for acquiring a reference image and an optical image by associating the data of the reference image and the data of the optical image with the gradation values defined by a color palette selected from among a plurality of first color palettes; and means for acquiring a comparison image by associating comparison image data that can be acquired from the reference image data and the optical image data with the gradation values defined by a color palette selected from among a plurality of second color palettes. Gradation values for the comparison image data are represented by gradation values for the reference image data and gradation values for the optical image data. | 04-21-2011 |
| 20110089346 | METHOD AND SYSTEM FOR PATTERN WRITING WITH CHARGED-PARTICLE BEAM - Irradiation position errors of a first charged-particle-beam writing apparatus are calculated by scanning a charged-particle beam across a calibration substrate on which two films having different reflectances are formed, with the calibration substrate being placed inside the first writing apparatus, and by then detecting signals indicative of charged particles reflected from the calibration substrate. Irradiation position errors of a second charged-particle-beam writing apparatus are calculated in a similar manner. Then, the differences between the calculated irradiation position errors of the first writing apparatus and the calculated irradiation position errors of the second writing apparatus are calculated to correct the irradiation position errors of the second writing apparatus based on the calculated differences. | 04-21-2011 |
| 20110068281 | CHARGED PARTICLE BEAM DRAWING APPARATUS AND PROXIMITY EFFECT CORRECTION METHOD THEREOF - A charged particle beam drawing apparatus forms a map having meshes, forms representative figures, area of each representative figure in each mesh being equal to gross area of figures in each mesh, and calculates a proximity effect correction dose of the charged particle beam in each mesh on the basis of area of each representative figure in each mesh. If it is necessary to change the proximity effect correction dose of the charged particle beam for drawing at least one pattern corresponding to at least one figure, the charged particle beam drawing apparatus changes area of the at least one figure before the representative figures are formed by a representative figure forming portion, and changes the proximity effect correction dose of the charged particle beam for drawing the at least one pattern corresponding to the at least one figure, calculated by a proximity effect correction dose calculating portion. | 03-24-2011 |
| 20110066272 | CHARGED PARTICLE BEAM WRITING METHOD AND APPARATUS THEREFOR - A charged particle beam writing method includes inputting layout information of a plurality of chips on which pattern formation is to be achieved, setting, using the layout information, a plurality of writing groups each being composed of at least one of the plurality of chips and each having writing conditions differing from each other, setting, for each of the plurality of writing groups, a frame which encloses a whole of all chip regions in the each of the plurality of writing groups, virtually dividing the frame into a plurality of stripe regions in a predetermined direction, with respect to the each of the plurality of writing groups, setting, using the plurality of stripe regions of all the plurality of writing groups, an order of each of the plurality of stripe regions such that a reference position of the each of the plurality of stripe regions is located in order in the predetermined direction regardless of the plurality of writing groups, and writing a pattern in the each of the plurality of stripe regions onto a target workpiece according to the order which has been set, by using a charged particle beam. | 03-17-2011 |
| 20110066271 | CHARGED PARTICLE BEAM WRITING METHOD AND APPARATUS THEREFOR - A charged particle beam writing method includes inputting layout information of a plurality of chips on which pattern formation is to be achieved, setting, using the layout information, a plurality of writing groups each being composed of at least one of the plurality of chips and each having writing conditions differing from each other, setting a frame which encloses a whole of all chip regions in all the plurality of writing groups, virtually dividing the frame into a plurality of stripe regions in a predetermined direction while keeping chips of writing groups differing from each other intermingled, setting an order of each of the plurality of stripe regions such that a reference position of the each of the plurality of stripe regions is located in order in the predetermined direction, and writing a pattern in the each of the plurality of stripe regions onto a target workpiece according to the order which has been set, by using a charged particle beam. | 03-17-2011 |
| 20110046762 | CHARGED PARTICLE BEAM WRITING APPARATUS, CHARGED PARTICLE BEAM WRITING METHOD AND APPARATUS OF PROCESSING DATA FOR CHARGED PARTICLE BEAM WRITING - There is provided a charged particle beam writing apparatus in which data processing is optimized by automatically dividing process regions on which parallel distributed processing is performed. A charged particle beam writing apparatus includes: a data storage unit to which layout data defining a plurality of figure patterns in a chip region is input and which stores the layout data; a dividing unit configured to divide the chip region into a plurality of process regions; a shot data generating unit configured to perform distributed processing on pattern data in the process regions using a plurality of computing processors so as to convert the pattern data to shot data for shooting a charged particle beam onto a target object; a determining and instructing unit configured to compare an amount of output data from each of the computing processors with a predetermined threshold, and when the amount of the output data is larger than the threshold, instruct corresponding one of the computing processors to divide corresponding one of the process regions and continue the data processing; and a writing unit configured to write on the target object using the shot data. | 02-24-2011 |
| 20110044529 | INSPECTION SYSTEM AND INSPECTION METHOD - A control computer | 02-24-2011 |
| 20110044528 | INSPECTION SYSTEM - The entire surface of a photomask | 02-24-2011 |
| 20110033788 | CHARGED PARTICLE BEAM DRAWING APPARATUS AND METHOD - A charged particle beam drawing apparatus has a drawing chamber including a movable stage which supports a mask, the mask being formed by applying a resist to an upper surface of a mask substrate, an optical column for applying a charged particle beam to draw patterns in the resist, a charged particle beam dose correction portion for correcting a dose of the charged particle beam applied from the optical column to the resist on the basis of proximity effect and fogging effect, and a conversion coefficient changing portion for changing a conversion coefficient on the basis of pattern density in the resist and a position in the resist, wherein the conversion coefficient is a ratio of an accumulation energy of the charged particle beam accumulated in the resist, to an accumulation dose of the charged particle beam accumulated in the resist. | 02-10-2011 |
| 20110031387 | CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD THEREOF - A charged particle beam writing apparatus includes a charge amount distribution calculation unit configured to calculate a charge amount distribution which is charged by irradiation of a charged particle beam onto a writing region of a target workpiece, by using a charge decay amount and a charge decay time constant both of which depend on a pattern area density, a position displacement amount distribution calculation unit configured to calculate a position displacement amount of each writing position due to charge amounts of the charge amount distribution by performing convolution of each charge amount of the charge amount distribution with a response function, and a writing unit configured to write a pattern on the each writing position where the position displacement amount has been corrected, using a charged particle beam. | 02-10-2011 |
| 20110012031 | CHARGED PARTICLE BEAM DRAWING METHOD AND APPARATUS - A charged particle beam drawing apparatus for drawing patterns corresponding to figures in a drawing data, has a portion for dividing a drawing area on the workpiece into block frames, a portion for combining at least a first block frame and a second block frame into a virtual block frame, and a portion for transferring a data of the virtual block frame from an input data dividing module to a common memory of a first converter and a second converter. The first converter converts a data of a first figure included in the first block frame into a first drawing apparatus internal format data. The second converter converts a data of a second figure included in the second block frame into a second drawing apparatus internal format data. The first figure and the second figure are included in a cell extending over the first block frame and the second block frame. | 01-20-2011 |
| 20100306721 | WRITE ERROR VERIFICATION METHOD OF WRITING APPARATUS AND CREATION APPARATUS OF WRITE ERROR VERIFICATION DATA FOR WRITING APPARATUS - A write error verification method of a writing apparatus verifying a write error after a write operation being started in the writing apparatus to which layout data containing a figure pattern to be formed is input and which forms the figure pattern on a target object based on the layout data input, the write error verification method includes: if a write error occurs in a process between input of the layout data into the writing apparatus and inspection of the target object on which the figure pattern is formed, selecting a part of the layout data necessary for operation of a function that has caused the write error; extracting parts of the layout data corresponding to a selected part of the layout data for all of a plurality of portions of the target object if a pattern indicated by the selected part of the layout data is arranged at the plurality of portions of the target object; creating verification data by deleting at least one parts extracted for at least one portions other than a portion that has caused the write error from extracted parts of the layout data and by using remaining data; and reproducing the operation of the function that has caused the write error using the verification data to output a result of the reproducing. | 12-02-2010 |
| 20100290023 | METHOD FOR DETECTING SUBSTRATE POSITION OF CHARGED PARTICLE BEAM PHOTOLITHOGRAPHY APPARATUS AND CHARGED PARTICLE BEAM PHOTOLITHOGRAPHY APPARATUS - One aspect of the invention provides a substrate position detecting method for charged particle beam photolithography apparatus in order to be able to measure accurately and simply a substrate position on a stage. The substrate position detecting method for charged particle beam photolithography apparatus includes placing a substrate on a stage that can be moved in an X-direction and a Y-direction; measuring a position in the X-direction of the stage while moving the stage in the X-direction, and illuminating obliquely an upper surface of the substrate with a laser beam to receive light reflected from the substrate with a position sensing device; computing a barycentric position of the reflected light when the stage is moved in the X-direction; measuring a position in the Y-direction of the stage while moving the stage in the Y-direction, and illuminating obliquely the upper surface of the substrate with the laser beam to receive light reflected from the substrate with the position sensing device; computing a barycentric position of the reflected light when the stage is moved in the Y-direction; and computing the positions of the substrate from the position measurement results of the stage and the computed barycentric position. | 11-18-2010 |
| 20100288939 | METHOD OF DETERMINING MAIN DEFLECTION SETTLING TIME FOR CHARGED PARTICLE BEAM WRITING, METHOD OF WRITING WITH CHARGED PARTICLE BEAM, AND APPARATUS FOR WRITING WITH CHARGED PARTICLE BEAM - An electron beam is moved a long distance along a straight line from a sub-deflection region | 11-18-2010 |
| 20100270475 | DRIFT MEASURING METHOD, CHARGED PARTICLE BEAM WRITING METHOD, AND CHARGED PARTICLE BEAM WRITING APPARATUS - A detector 32 measures the value of the current formed by reflected electrons generated as a result of irradiation of a reference mark on a substrate with an electron beam 54, where the reference mark is made of a material having a different reflectance than the substrate. The signal from the detector 32 is amplified by a detecting unit 33 and converted to a digital signal by an A/D conversion unit 34. A control computer 19 then performs averaging processing on the digital signal which is then used for drift compensation by a writing data correcting unit 31. | 10-28-2010 |
| 20100266194 | METHOD OF DETERMINING DEFECT SIZE OF PATTERN USED TO EVALUATE DEFECT DETECTION SENSITIVITY AND METHOD OF CREATING SENSITIVITY TABLE - A defect size determining method measures a dimension A | 10-21-2010 |
| 20100238420 | LITHOGRAPHY APPARATUS AND LITHOGRAPHY METHOD - A lithography apparatus includes a stage on which a target object is placed; a chamber in which the stage is arranged and which has one side surface in which an opening having a size which is enough to carry the stage in or out is formed, the opening being closed with an independent lid; an electro-optic lens barrel arranged on the chamber; and a rib portion formed to have a shape that is convex on an upper portion of the side surface of the chamber in which the opening is formed. | 09-23-2010 |
| 20100237261 | CHARGED PARTICLE BEAM WRITING APPARATUS - A blanking deflector | 09-23-2010 |
| 20100237256 | CHARGED PARTICLE BEAM WRITING METHOD, METHOD FOR DETECTING POSITION OF REFERENCE MARK FOR CHARGED PARTICLE BEAM WRITING, AND CHARGED PARTICLE BEAM WRITING APPARATUS - The reference mark has steps and is formed on a sample. A stage moves in X and Y directions. The sample M is placed on the stage. An optical lever type height position sensor emits light to detect the reference mark FM′ by the stage being scanned. The spot position of light reflected on the sample is detected in position sensitive detector. The X and Y coordinates of the position of the stage positioned when the spot position of the reflected light is changed is detected. The detected X and Y coordinates are regarded as the position C of the reference mark FM′. The position of a phase defect D located in the sample M is specified on the basis of the position C of the reference mark FM′. The position of a portion on which writing is to be performed is determined on the basis of a relationship with the specified position of the phase defect D. | 09-23-2010 |
| 20100237253 | CHARGED PARTICLE BEAM DRAWING METHOD AND APPARATUS - A charged particle beam drawing apparatus includes a charged particle beam gun, a first forming aperture member having an opening, wherein a charged particle beam emitted from the charged particle beam gun is passed through the opening of the first forming aperture member, a second forming aperture member having an opening, wherein the charged particle beam passed through the first forming aperture member is passed through the opening of the second forming aperture member, a movable stage for supporting a workpiece, wherein patterns corresponding to figures in a drawing data are drawn on the workpiece by the charged particle beam passed through the second forming aperture member, and a drawing data correcting process portion for moving the figures in the drawing data on the basis of positions in the opening of the second forming aperture, where the charged particle beam for drawing the patterns is passed through. | 09-23-2010 |
| 20100224789 | CHARGED PARTICLE BEAM WRITING APPARATUS AND OPTICAL AXIS DEVIATION CORRECTING METHOD FOR CHARGED PARTICLE BEAM - A charged particle beam writing apparatus includes a stage on which a target object is placed; an emitting unit configured to emit a charged particle beam to the stage side; a blocking unit arranged between the emitting unit and the stage and configured to block the charged particle beam emitted; a deflector having electrodes through which a current flows by applying a voltage and configured to deflect the charged particle beam passing between the electrodes onto the blocking unit by applying a predetermined voltage across the electrodes; an optical axis adjusting unit configured to correct optical axis deviation of the charged particle beam generated by continuously repeating irradiation (beam-ON) of the charged particle beam on a target object and blocking (beam-OFF) of the beam by applying a two-step voltage to the deflector; and a control unit configured to control the optical axis adjusting unit such that an amount of the optical axis deviation is corrected. | 09-09-2010 |
| 20100207017 | CHARGED PARTICLE BEAM WRITING METHOD AND CHARGED PARTICLE BEAM WRITING APPARATUS - The height of selected points on the surface of a mask is measured, and if the number of measurement errors in this measurement is less than a predetermined value, an approximated curved surface for the mask surface is generated. The measurement data and height data obtained from the approximated curved surface are then compared, and if there is no point at which the difference between the measurement data and the data obtained from the approximated curved surface is greater than a predetermined threshold value, then it is determined that the reliability of the approximated curved surface is high and the height of the mask surface is corrected in accordance with this approximated curved surface. | 08-19-2010 |
| 20100200773 | APPARATUS AND METHOD FOR CHARGED-PARTICLE BEAM WRITING - An average write speed M is calculated by averaging write speeds for blocks of a tentative block size La, and write speed variation σ of the blocks with respect to the average write speed M is calculated (Step S | 08-12-2010 |
| 20100178611 | Lithography method of electron beam - A charged particle beam writing method on a chemical amplification type resist, comprising: coating said chemical amplification type resist which contains an acid diffusion inhibitor, on a surface of a mask substrate, exposing charged particle beams to said chemical amplification type resist layer on said surface of the mask substrate, baking said chemical amplification type resist layer which said charged particle beams were exposed, and developing said chemical amplification type resist after the baking, wherein an exposure current density of said electron beams exposing ranges of 50 | 07-15-2010 |
| 20100173235 | METHOD AND APPARATUS FOR WRITING - A writing method includes calculating a proximity effect-corrected dose for correcting a proximity effect in charged particle beam writing, for each first mesh region made by virtually dividing a writing region of a target object into a plurality of first mesh regions of a first mesh size, calculating a fogging effect-corrected dose by using the proximity effect-corrected dose calculated and an area density in the first mesh size with respect to a part of a calculation region for calculating the fogging effect-corrected dose for correcting a fogging effect in the charged particle beam writing, and by using an area density in a second mesh size larger than the first mesh size with respect to a remaining part of the calculation region, synthesizing the fogging effect-corrected dose and the proximity effect-corrected dose for the each first mesh region, and writing a pattern on the target object by using a charged particle beam based on a synthesized correction dose. | 07-08-2010 |
| 20100098322 | METHOD AND APPARATUS FOR REVIEWING DEFECTS ON MASK - A defect to be reviewed is selected from a plurality of defects obtained from inspection results. When the selected defect is a defect of a pattern written using an iteration expression in design data on the mask, another pattern written using the iteration expression in the design data is extracted. A defect present in another pattern is extracted. A peripheral pattern portion located at the periphery of the selected defect and a peripheral pattern portion located at the periphery of the extracted defect are extracted. It is determined whether the peripheral pattern portions extracted are similar to each other. When the peripheral pattern portions are similar to each other, the selected defect and the extracted defect are grouped. It is determined whether the selected defect is an actual defect or a pseudo defect. The determination result is applied to the other grouped defect. | 04-22-2010 |
| 20100074513 | MASK INSPECTION APPARATUS AND MASK INSPECTION METHOD - The present invention provides a mask inspection apparatus and method capable of eliminating distortion of each optical image, which is caused by distortions of mirrors and flexure of a mask, and performing a mask inspection with satisfactory accuracy. A stage with the mask held thereon is moved in X and Y directions and an optical image of each pattern written onto the mask is acquired while using the results of measurement by laser interferometers (Step S | 03-25-2010 |
| 20100074511 | MASK INSPECTION APPARATUS, AND EXPOSURE METHOD AND MASK INSPECTION METHOD USING THE SAME - The present invention provides a mask inspection apparatus and method capable of inspecting masks used in double patterning with satisfactory accuracy. | 03-25-2010 |
| 20100072403 | PATTERN FORMING APPARATUS AND PATTERN FORMING METHOD - A pattern forming apparatus using lithography technique includes a stage configured to allow a target object to be placed thereon; a plurality of columns configured to form patterns on the target object by using a charged particle beam while moving relatively to the stage; a pattern forming rule setting unit configured to set a pattern forming rule depending on a position of broken one of the plurality of columns; a region setting unit configured to set regions so that unbroken ones of the plurality of columns respectively form a pattern in one of the regions; a plurality of control circuits each configured to control any one of the plurality of columns different from others of the plurality of columns controlled by others of the plurality of control circuits; and a pattern forming data processing unit configured to perform a converting process on pattern forming data for the regions set to output a corresponding data generated by the converting process to the control circuit of a corresponding one of the unbroken ones of the plurality of columns respectively. | 03-25-2010 |
| 20100072390 | CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD - The present invention provides a charged particle beam writing apparatus and a charged particle beam writing method capable of shortening the time necessary to generate shot data and improving writing throughput. | 03-25-2010 |
| 20100067778 | APPARATUS AND METHOD FOR PATTERN INSPECTION - A pattern inspection apparatus includes a light source, a stage configured to mount thereon a substrate with a pattern formed thereon, a first laser measuring unit configured to measure a position of the stage by using a laser beam, a sensor configured to capture a pattern image obtained from the pattern, formed on the substrate, irradiated by light from the light source, an optical system configured to focus the pattern image on the sensor, a second laser measuring unit configured to measure a position of the optical system by using a laser beam, a correction unit configured to correct a captured pattern image by using a difference between the position of the stage and the position of the optical system, and an inspection unit configured to inspect whether there is a defect of the pattern by using a corrected pattern image. | 03-18-2010 |
| 20100060890 | APPARATUS AND METHOD FOR PATTERN INSPECTION - A pattern inspection apparatus includes a pulsed light source configured to emit pulsed light; a stage configured to mount thereon an inspection target object with a pattern formed thereon; a time delay integration (TDI) sensor configured to detect, a plurality of times with a time delay, each pixel value of an optical image of the inspection target object, wherein the optical image is acquired by emitting the pulsed light onto the inspection target object, and to integrate a detected each pixel value for each pixel of the optical image; a light quantity sensor configured to detect a light quantity of the pulsed light after emitting the pulsed light onto the inspection target object; a light quantity measurement circuit configured to input the light quantity detected by the light quantity sensor, and to measure a light quantity of each pulse while being synchronized with a period of the pulsed light; a correction unit configured to input the light quantity of each pulse and an integrated pixel value output from the TDI sensor, and to correct the integrated pixel value output from the TDI sensor, for each pixel of the optical image, using a total light quantity of the light quantity of corresponding each pulse; and an inspection unit configured to inspect whether there is a defect of the pattern, using the integrated pixel value corrected. | 03-11-2010 |
| 20100032588 | WRITING APPARATUS AND WRITING METHOD - A writing apparatus includes a writing unit configured to write a first pattern onto a first mask substrate and a second pattern being complementary to the first pattern onto a second mask substrate using a charged particle beam, and an addition unit configured to add a positional deviation amount of the first pattern having been written on the first mask substrate to a writing position of the second pattern, wherein the writing unit writes the second pattern at the writing position on the second mask substrate, where the positional deviation amount of the first pattern has been added. | 02-11-2010 |
| 20100030522 | CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD FOR DIAGNOSING DAC AMPLIFIER UNIT IN CHARGED PARTICLE BEAM WRITING APPARATUS - The charged particle beam writing apparatus includes a position deflection control circuit. First digital data that is to be used for circuit diagnosis is transmitted from the position deflection control circuit to the DAC amplifier unit at the same rate as a rate of writing on a product reticle and stored in a first maintenance memory. Second digital data is output from a digital section included in the DAC amplifier unit in response to the first digital data and stored in a second maintenance memory. A maintenance clock generator generates a clock signal and reads the first digital data stored in the first maintenance memory and the second digital data stored in the second maintenance memory. The first digital data thus read is compared with the second digital data thus read for each bit to diagnose the digital section. | 02-04-2010 |
| 20100015537 | BEAM DOSE COMPUTING METHOD AND WRITING METHOD AND RECORD CARRIER BODY AND WRITING APPARATUS - A beam dose computing method includes specifying a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions, using said corrected size values in said second regions to create a map of base doses of the beam in respective ones of said second regions, using said corrected size values to prepare a map of proximity effect correction coefficients in respective ones of said second regions, using the maps to determine second corrected doses of said beam for correction of proximity effects in said third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object. | 01-21-2010 |
| 20100001203 | METHOD OF ACQUIRING OFFSET DEFLECTION AMOUNT FOR SHAPED BEAM AND LITHOGRAPHY APPARATUS - A method of acquiring an offset deflection amount for a shaped beam, includes forming reference images of first and second figures which can be shaped by first and second aperture plates placed on a lithography apparatus; forming, using design data of a mark, a reference image of the mark; forming a first convolution reference image obtained by a convolution calculation of the reference image of the mark and the reference image of the first figure and a second convolution reference image obtained by a convolution calculation of the reference image of the mark and the reference image of the second figure; respectively scanning over the mark with charged particle beams having shaped into the first and second figures by using the first and second aperture plates to acquire optical images of the first and second figures; forming a first convolution synthesis image obtained by a convolution calculation of the first convolution reference image and the optical image of the first figure and a second convolution synthesis image obtained by a convolution calculation of the second convolution reference image and the optical image of the second figure; calculating center-of-gravity positions of the first and second convolution synthesis images; and calculating an offset deflection amount for the charged particle beam having shaped into the second figure to match reference positions of the first and second figures based on the center-of-gravity positions of the first and second convolution synthesis images to output a result calculated. | 01-07-2010 |
| 20090314950 | LITHOGRAPHY APPARATUS AND FOCUSING METHOD FOR CHARGED PARTICLE BEAM - A lithography apparatus includes a unit irradiating a charged particle beam; first and second aperture plate members configured to shape the beam; first and second coils configured to be arranged between the unit and the first aperture plate member, to temporarily deflect the beam, to change a direction of the beam after the temporarily deflecting, and to deflect the beam to a position where the beam passes through the first aperture plate member by the changing; a lens configured to be arranged between the first and second aperture plate members and to control a focal position of the beam having passed through the first aperture plate member; and a unit configured to calculate a difference between positions of the beam on the second aperture plate member obtained by different sets of amounts of deflection at a same focal position when a combination of one of focal positions of the beam controlled by the lens and one of sets of amounts of deflection of the beam obtained by the first and second coils is changed. | 12-24-2009 |
| 20090285494 | DATA VERIFICATION METHOD AND CHARGED PARTICLE BEAM WRITING APPARATUS - Data including information related to each area with a graphic disposed therein is inputted to the writing apparatus. The area is delimited with meshes each having a predetermined size. Next, an area value of a graphic lying within each of the meshes and its center-of-gravity position are determined. For every mesh, a check is made whether the area value is less than or equal to a predetermined value. When the area value is less than or equal to the predetermined value, a range allowable for an x coordinate of the center-of-gravity position is determined and a check is made whether an actual x coordinate falls within this range. Next, a range allowable for a y coordinate of the center-of-gravity position is determined and a check is made whether an actual y coordinate falls within this range. | 11-19-2009 |
| 20090284591 | RETICLE DEFECT INSPECTION APPARATUS AND RETICLE DEFECT INSPECTION METHOD - The present invention provides a reticle defect inspection method and a reticle defect inspection apparatus capable of calibrating the offset and gain of a sensor amplifier using a product reticle even though black and white regions each sufficiently wider than a TDI sensor imaging area do not exist in the product reticle. An output of each pixel of the TDI sensor is amplified by the sensor amplifier. A bottom value of the amplified amount-of-light signal of each pixel is stored by bottom value storing means of offset/gain calibrating means, and a peak value thereof is stored by peak value storing means. The offset of each pixel is calculated by offset calculating means based on the bottom value of each pixel. The gain of each pixel is calculated by gain calculating means based on the offset of each pixel and the peak value of each pixel. The calculated offset and gain of each pixel are stored in a register and thereby the offset and gain of the sensor amplifier are calibrated. | 11-19-2009 |
| 20090272911 | METHOD FOR INSPECTING SETTLING TIME OF DEFLECTION AMPLIFIER, AND METHOD FOR JUDGING FAILURE OF DEFLECTION AMPLIFIER - A method for inspecting a settling time of a deflection amplifier includes setting a settling time, performing shooting a plurality of times alternately to project two patterns of different types which are shaped by making a charged particle beam pass through a first and a second apertures while deflecting the charged particle beam by a deflector controlled by an output of a deflection amplifier which is driven based on the settling time having been set, measuring beam currents of the shooting, calculating an integral current of the beam currents measured, and calculating a difference between the integral current calculated and a reference integral current to output the difference. | 11-05-2009 |
| 20090259431 | ELECTRON BEAM WRITING APPARATUS AND POSITION DISPLACEMENT AMOUNT CORRECTING METHOD - The present invention provides an electron beam writing apparatus and an image placement error correcting method each capable of calculating a high-accuracy correction amount relative to an image placement error in consideration of a difference in required unit area of height distribution data between the shape of a back surface of an EUV mask and the shape of a surface of a pin chuck. Of back surface shape data of the EUV mask necessary to perform an image placement error correction of each pattern, the back surface shape data of a position brought into contact with each pin of the pin chuck is extracted. The image placement error is calculated only from the extracted back surface shape data. | 10-15-2009 |
| 20090258317 | WRITING APPARATUS AND WRITING METHOD - A writing apparatus includes a writing unit configured to a write a pattern onto a target workpiece, based on a writing data of the pattern to be written on the target workpiece, and a generation unit configured generate, after the pattern has been written, writing data of a figure code indicating a writing information of when the target workpiece is written, based on the writing information, wherein the writing unit further writes the figure code onto the target workpiece, based on the writing data of the figure code. | 10-15-2009 |
| 20090246655 | ELECTRON BEAM WRITING APPARATUS AND METHOD - A Z stage is placed on an XY stage in avoidance of an area to which a mark table is fixed. The mask M is placed on a holding mechanism provided on the Z stage. A middle value of the range adjustable by the focal adjustment mechanism is made coincident with the height of the mark table. The height of the mark table is measured and the heights of plural measurement points of the mask M are measured. The Z stage is moved in such a manner that the height of a middle value between highest and lowest values of the heights of these measurement points coincides with the height of the mark table. | 10-01-2009 |
| 20090244530 | MASK INSPECTION APPARATUS - A lightweight and inexpensive mask inspection apparatus having highly efficient environmental radiation resistance is provided. The mask inspection apparatus is a mask inspection apparatus for inspecting for mask defects and includes a light source, an illuminating optical system configured to irradiate a mask with an inspection light emitted from the light source, a magnifying optical system configured to cause the inspection light with which the mask is irradiated to form an image as an optical image, and image sensor configured to acquire the optical image. The image sensor has an environmental radiation shielding member of heavy metal having a specific gravity equal to or greater than that of tantalum (Ta) at least on a side opposite to a receiving surface of a sensor chip. | 10-01-2009 |
| 20090242807 | CORRECTING SUBSTRATE FOR CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS - A correcting substrate for a charged particle beam lithography apparatus includes a substrate body using a low thermal expansion material having a thermal expansion lower than that of a silicon oxide (SiO | 10-01-2009 |
| 20090242787 | CHARGED-PARTICLE BEAM WRITING METHOD AND CHARGED-PARTICLE BEAM WRITING APPARATUS - A pattern density distribution and a dose distribution calculated using the pattern density distribution are multiplied by each other to calculate an exposure distribution. A fogging electron amount distribution is calculated using the exposure distribution and a function descriptive of a fogging spread distribution. Charge amount distributions in irradiation and non-irradiation regions are calculated using the exposure distribution and the fogging electron amount distribution. A position displacement amount distribution is calculated using the charge amount distributions and a response function for converting a charge amount to a position displacement error. | 10-01-2009 |
| 20090237824 | PATTERN WRITING SYSTEM AND PARAMETERS MONITORING METHOD FOR PATTERN WRITING APPARATUS - A pattern writing system includes a plurality of control units configured to use different communication standards; a pattern writing unit configured to be controlled by the plurality of control units and write a pattern on a target object by using a charged particle beam; a storage unit configured to receive parameter information from an external slave computer and stores the parameter information; a first interface information circuit group configured to output a received parameter information to at least one of the plurality of control units in conformity with a communication standard on the at least one of plurality of control units; a main computer; and a second interface circuit group configured to receive a request from the main computer, input parameter information been setting in the plurality of control units without passing through the storage unit, convert communication standards of the parameter information input into a communication standard used by the main computer, and output the parameter information whose each communication standard is converted to the main computer. | 09-24-2009 |
| 20090216450 | APPARATUS AND METHOD FOR INSPECTING OVERLAPPING FIGURE, AND CHARGED PARTICLE BEAM WRITING APPARATUS - An apparatus for inspecting overlapping figures includes a chip overlap inspection unit configured to input a data file on each chip of a plurality of chips arranged in a writing pattern, and inspect an existence of an overlap between a plurality of chips, based on arrangement data on each region of the plurality of chips, a setting unit configured to set, with respect to the plurality of chips, a plurality of hierarchies and a plurality of cell regions of each of the plurality of hierarchies, an extraction unit configured to extract, with respect to a plurality of chips where the overlap occurs, a cell region where the overlap is located, from a higher hierarchy level to a lower hierarchy level in order, a figure overlap judging unit configured to judge an existence of an overlap between a figure in the cell region extracted and a figure in the other cell region extracted, and an output unit configured to output data on a plurality of figures overlapping. | 08-27-2009 |
| 20090200488 | CHARGED PARTICLE BEAM WRITING APPARATUS, AND APPARATUS AND METHOD FOR CORRECTING DIMENSION ERROR OF PATTERN - A charged particle beam writing apparatus includes a first area density calculation unit configured to calculate a first area density occupied by a pattern of a first dimension in a predetermined region, a first dimension error calculation unit configured to calculate a first dimension error caused by a loading effect, using the first area density, a first dimension calculation unit configured to calculate a second dimension of a pattern obtained by correcting the first dimension error of the first dimension, a second area density calculation unit configured to calculate a second area density occupied by the pattern of the second dimension in the predetermined region, a second dimension error calculation unit configured to calculate a second dimension error caused by the loading effect, using the second area density, a second dimension calculation unit configured to calculate a third dimension by adding the second dimension error to the second dimension, a judgment unit configured to judge whether a difference between the first dimension and the third dimension is within a predetermined range or not, and a writing unit configured to write the pattern of the second dimension in which the difference is within the predetermined range, onto a target workpiece by using a charged particle beam. | 08-13-2009 |
| 20090194710 | WRITING APPARATUS, WRITING DATA CONVERSION METHOD, AND COMPUTER-READABLE RECORDING MEDIUM STORING PROGRAM - A writing apparatus includes a storage unit configured to store writing data, an acquiring unit configured to acquire pattern information on a plurality of patterns defined in the writing data, based on the writing data, a first table generating unit configured to generate a first table in which each pattern information corresponds to a number of times of using the each pattern information, based on acquired pattern information, for each predetermined region, a Huffman tree generating unit configured to generate a Huffman tree, based on the first table, a second table generating unit configured to generate a second table in which the each pattern information corresponds to a variable length binary code generated by encoding the each pattern information in such a manner that the larger the number of times of using the each pattern information is, the smaller a value of the variable length binary code is, based on the Huffman tree, a converting unit configured to convert data, which is defined by the writing data, in the predetermined region into a predetermined format using the variable length binary code, based on the second table, and a writing unit configured to write the plurality of patterns defined, onto a target workpiece, based on converted data in the predetermined region. | 08-06-2009 |
| 20090168044 | LITHOGRAPHY APPARATUS AND LITHOGRAPHY METHOD - A lithography apparatus includes a generating unit configured, by receiving character information which specifies a shape of an identification figure representing identification information of a target object, to generate pattern writing data of the identification figure on the basis of the character information; a synthesizing unit configured, by receiving a pattern writing data of a pattern written on the target object, to synthesize the pattern writing data of the pattern and the pattern writing data of the identification figure; and a pattern writing unit configured to write the pattern and the identification figure on the target object on the basis of the synthesized pattern writing data. | 07-02-2009 |
| 20090134343 | TRACKING CONTROL METHOD AND ELECTRON BEAM WRITING SYSTEM - Control data for a main deflector is calculated based on position data that specifies the position of a region to be irradiated with the electron beam on the subfield, data on the number of all beam shots on the subfield, data on a time required for all the beam shots, and stage data that specifies the position of the stage. When the number of beam shots on one of the divided subfield sections reaches the obtained number of the beam shots on each of the divided subfield sections, a writing process proceed to a writing operation to be performed on another one of the divided subfield sections based on the direction of the movement of the stage. | 05-28-2009 |
| 20090129664 | PATTERN INSPECTION APPARATUS AND METHOD - A pattern inspection apparatus includes a stage configured to mount thereon a target workpiece to be inspected where patterns are formed, at least one sensor configured to move relatively to the stage and capture optical images of the target workpiece to be inspected, a first comparing unit configured to compare first pixel data of an optical image captured by one of the at least one sensor with first reference data at a position corresponding to a position of the first pixel data, and a second comparing unit configured to compare second pixel data of an optical image captured by one of the at least one sensor at a position shifted by a sub-pixel unit from the position where the optical image of the first pixel data is captured, with second reference data at a position corresponding to the position of the second pixel data. | 05-21-2009 |
| 20090087082 | PATTERN INSPECTION APPARATUS AND METHOD - A pattern inspection apparatus includes a stage configured to mount a target workpiece to be inspected thereon, a sensor configured to include a plurality of light receiving elements arrayed in a second direction orthogonal to a first direction which moves relatively to the stage, and to capture optical images of the target workpiece by using the plurality of light receiving elements, an accumulation unit configured to accumulate each pixel data of the optical images overlappingly captured by the sensor at positions shifted each other in the second direction by a pixel unit, for each pixel, and a comparison unit configured to compare the each pixel data accumulated for each pixel with predetermined reference data. | 04-02-2009 |
| 20090084990 | CHARGED-PARTICLE BEAM WRITING APPARATUS AND CHARGED-PARTICLE BEAM WRITING METHOD - A timing control circuit controls the timing for applying a voltage to a sub deflector when changing a position to be irradiated with the charged-particle beam. A control computer compares a target line width and a line width of a pattern written with the timing for applying voltage to the sub deflector changed, and determines appropriate timing for applying voltage to the sub deflector from a timing range corresponding to a predetermined allowable range of the difference between the target line width and the line width of the written pattern. The control computer then controls the timing control circuit based on the determined timing. | 04-02-2009 |
| 20090075185 | MASK BLANK AND METHOD OF MANUFACTURING MASK - A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen. | 03-19-2009 |
| 20090073430 | INSPECTION APPARATUS AND INSPECTION METHOD - An inspection apparatus includes: a first light source having a first plurality of surface emitting laser elements which emit fundamental waves, respectively; a first illumination optical system configured to illuminate a first plurality of fundamental waves emitted from the first plurality of surface emitting laser elements on an object to be inspected; and a stage on which the object to be inspected is placed. | 03-19-2009 |
| 20090057576 | CHARGED PARTICLE BEAM WRITING METHOD - A writing method includes emitting a first charged particle beam formed to be a first shape by passing through a first shaping aperture and a second shaping aperture, onto a target workpiece; and emitting a second charged particle beam formed to be a second shape by passing through the first shaping aperture and the second shaping aperture, wherein the second charged particle beam is superimposed onto a same position exposed by the first charged particle beam and is formed by using an opposite sides of respective first and second shaping apertures to those used for the first shape. | 03-05-2009 |
| 20090057575 | CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND CHARGED PARTICLE BEAM LITHOGRAPHY METHOD - A charged particle beam lithography apparatus includes a first block area divider configured to divide a pattern forming area into a plurality of first block areas in order to make a number of shots when forming a pattern substantially equal; an area density calculator configured to calculate, using a plurality of small areas obtained by virtually dividing the pattern forming area into mesh areas of a predetermined size smaller than all of the first block areas, a pattern area density of each small area positioned therein for each of the first block areas; a second block area divider configured to re-divide the pattern forming area divided into the plurality of first block areas into a plurality of second block areas of a uniform size, which is larger than the small area; a corrected dose calculator configured to calculate, using the pattern area density of each small area, a proximity effect-corrected dose in each corresponding small area positioned inside the second block area for each of the second block areas; a beam dose calculator configured to calculate, using the proximity effect-corrected dose of each small area, a beam dose of a charged particle beam in each corresponding small area; and a pattern generator configured to form a predetermined pattern on a target object by irradiating a charged particle beam of the beam dose calculated for each of the small areas. | 03-05-2009 |
| 20090057570 | WRITING DATA CREATION METHOD AND CHARGED PARTICLE BEAM WRITING APPARATUS - A method of creating writing data for writing a pattern on a target workpiece by using a writing apparatus provided with a plurality of columns that emit charged particle beams includes inputting information on distance between optical centers of the plurality of columns, inputting layout data and virtually dividing a writing region indicated by the layout data into a plurality of small regions, by a width of one integer-th of the distance indicated by the information on distance, converting, for each small region, the layout data to a format adaptable to the writing apparatus to create, for the each small region, the writing data whose writing region is divided into the small regions, and outputting the writing data. | 03-05-2009 |
| 20090040513 | PATTERN INSPECTION APPARATUS AND PATTERN INSPECTION METHOD - A pattern inspection apparatus includes a light source configured to emit a pulsed light, a stage on which an inspection target workpiece is placed, a sensor, including a plurality of light receiving elements two-dimensionally arrayed, configured to capture a pattern image in a two-dimensional region of the inspection target workpiece which is irradiated with the pulsed light, by using the plurality of light receiving elements, and a comparing unit configured to compare data of the pattern image with predetermined reference pattern image data, wherein the stage moves to be shifted by a number of pixels, being the number of natural number times one pixel, between pulses of the pulsed light. | 02-12-2009 |
| 20090032738 | CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD THEREOF - A charged particle beam writing apparatus includes a dividing unit configured to virtually divide a writing region of a target workpiece into a plurality of small regions along a writing direction, a calculating unit configured to calculate a writing speed of each of the plurality of small regions by using a linear programming and a writing unit configured to write a desired pattern in each of the plurality of small regions at the writing speed calculated for each of the plurality of small regions by using a charged particle beam. | 02-05-2009 |
| 20090014663 | CHARGED-PARTICLE BEAM WRITING METHOD - The present invention provides an electron beam writing method capable of suppressing a variation in position to be irradiated with an electron beam due to its drift and writing a predetermined pattern. | 01-15-2009 |
| 20090008568 | CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD THEREOF - A charged particle beam writing apparatus includes a unit emitting a charged particle beam, a stage on which a target workpiece to be written is placed, a unit correcting a reference position of a small region in a writing region, based on a pattern distortion obtained from positions of figures spread over substantially all writing region of a dummy target workpiece and written without correcting, a first deflector deflecting the beam, based on a corrected reference position obtained by correcting the reference position, a correction unit correcting a relative distance from the corrected reference position to an arbitrary position in the small region, based on a pattern distortion of the dummy, by using the reference position and a coefficient of a correction equation for correcting the reference position, and a second deflector further deflecting the beam from a position deflected by the first deflector, based on the relative distance corrected. | 01-08-2009 |
| 20090001293 | CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing method includes writing a pattern on a first target object by using a charged particle beam in a writing apparatus; and conveying a second target object after having written the pattern on the first target object, wherein even though the second target object is arranged on any one of conveying paths including a carry-out port and a carry-in port of the writing apparatus, a conveying operation for the second target object is not performed during writing the pattern on the first target object. | 01-01-2009 |
| 20080299490 | WRITING METHOD AND CHARGED PARTICLE BEAM WRITING APPARATUS - A charged particle beam writing apparatus includes a stage on which a first mask substrate and a second mask substrate are arranged side by side, and a writing unit to write a first pattern on the first mask substrate and a second pattern, which complements the first pattern, on the second mask substrate, by using charged particle beams. | 12-04-2008 |
| 20080296515 | CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD - A charged particle beam writing apparatus includes a stage on which a target object is placed and which moves in a predetermined direction, a first column configured to irradiate a first charged particle beam on a writing region of the target object, a second column which is located at the back of the first column in the predetermined direction and configured to irradiate a second charged particle beam on the writing region of the target object, and a sensor configured to measure a height level of the target object at any one of a position in front of a position where the first column irradiates the first charged particle beam in the predetermined direction and a position almost immediately under the position where the first charged particle beam is irradiated. | 12-04-2008 |
| 20080265174 | CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD - A charged particle beam writing apparatus includes an unit configured to irradiate a beam, a deflector configured to deflect the beam, a stage, on which a target is placed, configured to perform moving continuously, an lens configured to focus the beam onto the target, an unit configured to calculate a correction amount for correcting positional displacement of the beam on a surface of the target resulting from a first magnetic field caused by the lens and a second magnetic field caused by an eddy current generated by the first magnetic field and the moving of the stage, an unit configured to calculate a correction position where the positional displacement on the surface of the target has been corrected using the correction amount, and an unit configured to control the deflector so that the beam may be deflected onto the correction position. | 10-30-2008 |
| 20080263236 | DATA TRANSFER SYSTEM - A data transfer system is provided, in which divided data generated by data generation terminals are randomly transmitted to data transfer apparatuses by a host terminal, a parameter list controlling the order of transfer of divided data is generated by a parameter list generation part, and a transfer processing part transfers divided data transferred in a DMA mode to an electron beam drawing apparatus according to the parameter list through a general-purpose high-speed data transfer bus by bypassing a CPU. | 10-23-2008 |
| 20080237493 | ELECTRON BEAM LITHOGRAPHY SYSTEM - An electron beam lithography method is provided for sequentially irradiating an electron beam deflected by a deflector on a shot-by-shot basis to draw a pattern on a surface of a sample mounted on a stage. This method includes the step of irradiating the electron beam on the sample surface as a combination of shots each irradiated in one of rectangular or square regions having the same area and different shapes, in order to draw a correction pattern. This method also includes the steps of correcting the shape of the electron beam based on the drawn correction pattern, and drawing a pattern using the shape-corrected electron beam. | 10-02-2008 |
| 20080235535 | WRITING DATA PROCESSING CONTROL APPARATUS, WRITING METHOD, AND WRITING APPARATUS - A writing data processing control apparatus includes an assignment part configured to assign processing of a plurality of pieces of writing data of predetermined divided writing regions, stored in a storage device, one by one to one of a plurality of processing apparatuses in which processing is performed in parallel, and a separation part configured, when a processing error occurred as a result of processing of writing data read from the storage device by a first processing apparatus assigned, to separate the first processing apparatus in which the processing error occurred from assigning targets of subsequent writing data processing, wherein the assignment part reassigns the processing of the writing data in which the processing error occurred to a second processing apparatus being different from the first processing apparatus. | 09-25-2008 |
| 20080221816 | DATA VERIFICATION METHOD, CHARGED PARTICLE BEAM WRITING APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUM WITH PROGRAM - A charged particle beam writing apparatus includes an input unit configured to input writing data for writing a plurality of cell patterns including at least one cell pattern in which an identifier is added to each of data defining the at least one cell pattern extending over at least two small regions in a plurality of small regions obtained by virtually dividing a writing region, an extraction unit configured to extract the at least one cell pattern to which the identifier is added from the plurality of cell patterns, an output unit configured to output an error result when only one cell pattern is extracted, and a writing unit configured to write the plurality of cell patterns by irradiating a target workpiece with a charged particle beam, based on the writing data for which the error result is not output. | 09-11-2008 |
| 20080217554 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes an irradiation part configured to irradiate a charged particle beam; a first shaping aperture member having passing areas, that the charged particle beam passes through, on both sides of an area blocking the charged particle beam; a deflection part configured to deflect the charged particle beam that has passed through the first shaping aperture member; a second shaping aperture member having passing areas, that the charged particle beam passes through, on both sides of an area blocking the deflected charged particle beam; and a stage on which a target workpiece irradiated with the charged particle beam that has passed through the second shaping aperture member is placed. | 09-11-2008 |
| 20080217553 | FOCUSING METHOD OF CHARGED PARTICLE BEAM AND ASTIGMATISM ADJUSTING METHOD OF CHARGED PARTICLE - A focusing method of a charged particle beam includes measuring a first set value to focus a beam on a position of a reference plane by using a lens coil, acquiring a first factor to change a set value of an electrostatic lens depending on a distance and a second factor to change a set value of the coil depending on a distance, measuring a level distribution of a target plane, correcting the first set value by using the second factor to correct a focal point position of the beam in the coil from the position of the reference plane to an intermediate level position of the level distribution of the target plane, and correcting a second set value of the lens depending on a level position of the target plane by using the first factor to correct a focal point position of the beam by the lens. | 09-11-2008 |
| 20080206654 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES, AND METHOD FOR FORMING A PATTERN ONTO AN EXPOSURE MASK - A method for manufacturing a semiconductor device includes calculating a correction amount for correcting a dimension error generated in a pattern, by using an area and a total length of sides of a perimeter of the pattern included in each grid region of a plurality of mesh-like grid regions made by virtually dividing a pattern creation region of an exposure mask, exposing the pattern whose dimension has been corrected by the correction amount onto a substrate on which a resist film is coated, developing the resist film after the exposing, and processing the substrate by using a resist pattern after the developing. | 08-28-2008 |
