| NOVELLUS SYSTEMS, INC. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120129277 | METHODS AND APPARATUSES FOR DETERMINING THICKNESS OF A CONDUCTIVE LAYER - Methods and apparatuses for calibrating eddy current sensors. A calibration curve is formed relating thickness of a conductive layer in a magnetic field to a value measured by the eddy current sensors or a value derived from such measurement, such as argument of impedance. The calibration curve may be an analytic function having infinite number terms, such as trigonometric, hyperbolic, and logarithmic, or a continuous plurality of functions, such as lines. High accuracy allows the omission of optical sensors, and use of eddy current sensors for endpoint detection, transition call detection, and closed loop control in which a process parameter is changed based on the measured magnetic flux density change in one or more processing zones. | 05-24-2012 |
| 20120123737 | FAULT DETECTION APPARATUSES AND METHODS FOR FAULT DETECTION OF SEMICONDUCTOR PROCESSING TOOLS - Fault detection apparatuses and methods for detecting a processing or hardware performance fault of a semiconductor production tool have been provided. In an exemplary embodiment, a method for detecting a fault of a semiconductor production tool includes sensing a signal associated with a test component of the production tool during operation of the production tool and converting the signal to an electronic test signal. A prerecorded signature signal corresponding to the test component is provided and the test signal and the prerecorded signature signal are compared. | 05-17-2012 |
| 20120097331 | GAS FLOW DISTRIBUTION RECEPTACLES, PLASMA GENERATOR SYSTEMS, AND METHODS FOR PERFORMING PLASMA STRIPPING PROCESSES - Systems, system components, and methods for plasma stripping are provided. In an embodiment, a gas flow distribution receptacle may have a rounded section that includes an inner surface defining a reception cavity, an outer surface forming an enclosed end, and a centerpoint on the outer surface having a longitudinal axis extending therethrough and through the reception cavity. First and second rings of openings provide flow communication with the plasma chamber. The second ring of openings are disposed between the first ring and the centerpoint, and each opening of the second ring of openings extends between the inner and outer surfaces at a second angle relative to the longitudinal axis that is less than the first angle and has a diameter that is substantially identical to a diameter of an adjacent opening and smaller than the diameters of an opening of the first ring of openings. | 04-26-2012 |
| 20110256724 | GAS AND LIQUID INJECTION METHODS AND APPARATUS - A liquid injection system for a processing chamber includes a liquid injector that receives a liquid from a liquid supply and that selectively pulses the liquid into a conduit. A control module selects a number of pulses and a pulse width of the liquid injector. A gas supply supplies gas into the conduit. A sensor senses at least one of a first temperature and a first pressure in the conduit and that generates at least one of a first temperature signal and a first pressure signal, respectively. The control module confirms that the selected number of pulses occur based on the at least one of the first temperature signal and the first pressure signal. | 10-20-2011 |
| 20110233056 | ELECTROPLATING CUP ASSEMBLY - Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup. | 09-29-2011 |
| 20110217465 | SHIELDS FOR SUBSTRATE PROCESSING SYSTEMS - A shielding system for a physical vapor deposition (PVD) chamber is disclosed. The PVD chamber includes a pedestal supporting a substrate. The shielding system includes a first annular portion and a second annular portion of a pedestal shield. The first annular portion is attached the pedestal at a first location. The first annular portion is located at or below a plane including the substrate. The second annular portion is attached to the pedestal at a second location that is below the first location. The first annular portion is spaced a predetermined distance from the second annular portion and is electrically isolated from the second annular portion. | 09-08-2011 |
| 20110181000 | RAPIDLY CLEANABLE ELECTROPLATING CUP SEAL - Embodiments of a closed-contact electroplating cup assembly that may be rapidly cleaned while an electroplating system is on-line are disclosed. One disclosed embodiment comprises a cup assembly and a cone assembly, wherein the cup assembly comprises a cup bottom comprising an opening, a seal surrounding the opening, an electrical contact structure comprising a plurality of electrical contacts disposed around the opening, and an interior cup side that is tapered inwardly in along an axial direction of the cup from a cup top toward the cup bottom. | 07-28-2011 |
| 20110111136 | PRECURSOR VAPOR GENERATION AND DELIVERY SYSTEM WITH FILTERS AND FILTER MONITORING SYSTEM - A vapor delivery system for supplying vapor to a chamber in a plasma-enhanced chemical vapor deposition (PECVD) system includes a vapor supply that supplies vapor by vaporizing at least one liquid precursor in a carrier gas. A first path includes a first filter that filters the vapor flowing from the vapor supply to the chamber. At least one second path is parallel to the first path and includes a second filter that filters vapor flowing from the vapor supply to the chamber. A plurality of valves are configured to switch delivery of the vapor to the chamber between the first path and the second path. | 05-12-2011 |
| 20110083965 | Electrolyte Concentration Control System for High Rate Electroplating - An electroplating apparatus for filling recessed features on a semiconductor substrate includes an electrolyte concentrator configured for concentrating an electrolyte having Cu | 04-14-2011 |
| 20110076390 | METHODS FOR MULTI-STEP COPPER PLATING ON A CONTINUOUS RUTHENIUM FILM IN RECESSED FEATURES - Methods are provided for multi-step Cu metal plating on a continuous Ru metal film in recessed features found in advanced integrated circuits. The use of a continuous Ru metal film prevents formation of undesirable micro-voids during Cu metal filling of high-aspect-ratio recessed features, such as trenches and vias, and enables formation of large Cu metal grains that include a continuous Cu metal layer plated onto the continuous Ru metal film. The large Cu grains lower the electrical resistivity of the Cu filled recessed features and increase the reliability of the integrated circuit. | 03-31-2011 |
| 20110059608 | METHOD FOR IMPROVING ADHESION OF LOW RESISTIVITY TUNGSTEN/TUNGSTEN NITRIDE LAYERS - Methods of improving the adhesion of low resistivity tungsten/tungsten nitride layers are provided. Low resistivity tungsten/tungsten nitride layers with good adhesion are formed by treating a tungsten or tungsten nitride layer before depositing low resistivity tungsten. Treatments include a plasma treatment and a temperature treatment. According to various embodiments, the treatment methods involve different gaseous atmospheres and plasma conditions. | 03-10-2011 |
| 20110048924 | PLASMA IGNITION PERFORMANCE FOR LOW PRESSURE PHYSICAL VAPOR DEPOSITION (PVD) PROCESSES - A plasma ignition system includes a first voltage supply that selectively supplies a plasma ignition voltage and a plasma maintenance voltage across an adapter ring and a cathode target of a physical vapor deposition (PVD) system. A second voltage supply selectively supplies a second voltage across the adapter ring and an anode ring of the PVD system. A plasma ignition control module ignites plasma using the plasma ignition voltage and the auxiliary plasma ignition voltage and, after the plasma ignites, supplies the plasma maintenance voltage and ceases supplying the plasma ignition voltage and the auxiliary plasma ignition voltage. | 03-03-2011 |
| 20110025338 | Monitoring of electroplating additives - The working electrode in the flow channel of a flow-through electrolytic detection cell is preconditioned by flowing a preconditioning electroplating solution with preconditioner species through the flow channel while applying a negative potential. Flow of liquid through the flow channel is rapidly switched from preconditioning solution to a target solution containing an organic target solute to be measured. The transient response of the system resulting from exposure of the working electrode to organic target solute is detected by measuring current density during an initial transient time period. An unknown concentration of target solute is determined by comparing the transient response with one or more transient responses characteristic of known concentrations. A preferred measuring system is operable to switch flow from preconditioning solution to target solution in about 200 milliseconds or less. | 02-03-2011 |
| 20110017139 | System for Depositing a Film by Modulated Ion-Induced Atomic Layer Deposition (MII-ALD) - The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method. | 01-27-2011 |
| 20100317198 | REMOTE PLASMA PROCESSING OF INTERFACE SURFACES - Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus comprises a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, and a remote plasma source configured to provide a remote plasma to the load lock. | 12-16-2010 |
| 20100317197 | Heat Shield for Heater in Semiconductor Processing Apparatus - A heat shield employed in semiconductor processing apparatus comprises a high performance insulation that has low thermal conductivity, such as, below the thermal conductivity of still air over a wide range of temperatures utilized in operation of the apparatus. As an example, the thermal conductivity of the insulation may be in the range of about 0.004 W/m·h to about 0.4 W/m·h over a temperature range of about 0° C. to about 600° C. or more. The deployment of the high performance heat shield reduces the power consumption necessary for the heater by as much as 20% to reach a desired processing temperature as compared to a case of heater power consumption required to reach the same desired temperature without the shield. Further, the heat shield significantly reduces the amount of undesired depositions from gas-entrained constituents on components in the chamber of the apparatus, particularly below or beyond the heat shield, by as much as 90% since the temperature drop is as much as ten orders of magnitude difference. | 12-16-2010 |
| 20100317178 | REMOTE PLASMA PROCESSING OF INTERFACE SURFACES - Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus comprises a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal. | 12-16-2010 |
| 20100278623 | MAGNETIC ROTATIONAL HARDSTOP FOR ROBOT - Rotational hardstop assemblies that provide greater than 360 degrees of non-continuous rotation for rotating mechanisms are provided. In certain embodiments, an assembly is used to provide 630 or more degrees of rotation for the shoulder axis of a robot, such as a wafer transfer robot. The rotational hardstop assemblies include opposing magnets as springs. According to various embodiments, the opposing magnets provide non-contact engagement and produce no contact noise nor have any wear over time. The rotational hardstop assemblies provide the ability to location from either direction of rotation of a robot cylindrical coordinate system. | 11-04-2010 |
| 20100273327 | METHOD FOR IMPROVING UNIFORMITY AND ADHESION OF LOW RESISTIVITY TUNGSTEN FILM - Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times. | 10-28-2010 |
| 20100224501 | PLATING METHODS FOR LOW ASPECT RATIO CAVITIES - The present invention relates to methods and apparatus for plating a conductive material on a workpiece surface in a highly desirable manner. Using a workpiece-surface-influencing device, such as a mask or sweeper, that preferentially contacts the top surface of the workpiece, relative movement between the workpiece and the workpiece-surface-influencing device is established so that an additive in the electrolyte solution disposed on the workpiece and which is adsorbed onto the top surface is removed or otherwise its amount or concentration changed with respect to the additive on the cavity surface of the workpiece. Plating of the conductive material can place prior to, during and after usage of the workpiece-surface-influencing device, particularly after the workpiece surface influencing device no longer contacts any portion of the top surface of the workpiece, to achieve desirable semiconductor structures. | 09-09-2010 |
| 20100219920 | MAGNETICALLY ACTUATED CHUCK FOR EDGE BEVEL REMOVAL - Provided are magnetically actuated wafer chucks that permit a wafer to be clamped or undamped at any time during a process and at any rotational speed, as desired. Such wafer chucks may include constraining members that are movable between open and closed positions. In a closed position, a constraining member aligns the wafer after wafer handoff and/or clamps the wafer during rotation to prevent it from flying off the chuck. In an open position, the constraining member moves away from the wafer to allow liquid etchant to flow from the wafer edge without obstruction. The constraining members may be, for example, cams, attached to arms or links of the chuck. The cams or other constraining members move between open and closed positions by self-balancing forces including a first force, such as a spring force, that acts to move a cam in a first direction, and a non-contact actuate-able force, such as a magnetic force, that acts to move the cam in the opposite direction. The resulting cam motion is smooth and continuous. | 09-02-2010 |
| 20100173074 | METHOD AND APPARATUS FOR MODULATION OF PRECURSOR EXPOSURE DURING A PULSED DEPOSITION PROCESS - A method of depositing material on a substrate comprises providing a reactor with a reaction chamber having a first volume, and contacting a surface of a substrate in the reaction chamber with a first precursor at the first chamber volume to react with and deposit a first layer on the substrate. The method further includes enlarging the reaction chamber to a second, larger volume and removing undeposited first precursor and any excess reaction product to end reaction of the first precursor with the substrate. | 07-08-2010 |
| 20100159694 | METHOD FOR DEPOSITING THIN TUNGSTEN FILM WITH LOW RESISTIVITY AND ROBUST MICRO-ADHESION CHARACTERISTICS - Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage. | 06-24-2010 |
| 20100151691 | METHOD FOR IMPROVED THICKNESS REPEATABILITY OF PECVD DEPOSITED CARBON FILMS - Provided herein are improved methods of depositing carbon-based films using acetylene as a precursor. The methods involve using a low-vapor pressure solvent, e.g., dimethylfluoride (DMF) to stabilize the acetylene and delivering the acetylene to a deposition chamber. The methods provide improved wafer-to-wafer thickness uniformity and increase the usable amount of acetylene in an acetylene source to over 95%. | 06-17-2010 |
| 20100147679 | Electroplating Apparatus with Vented Electrolyte Manifold - Embodiments related to increasing a uniformity of an electroplated film are disclosed. For example, one disclosed embodiment provides an electroplating apparatus comprising a plating chamber, a work piece holder, a cathode contact configured to electrically contact a work piece, and an anode contact configured to electrically contact an anode disposed in the plating chamber. A diffusing barrier is disposed between the cathode contact and the anode contact to provide a uniform electrolyte flow to the work piece, and electrolyte delivery and return paths are provided for delivering electrolyte to and away from the plating chamber. Additionally, a vented electrolyte manifold is disposed in the electrolyte delivery path immediately upstream of the plating chamber, the vented electrolyte manifold comprising one or more electrolyte delivery openings that open to the plating chamber and one or more vents that open to a location other than the plating chamber. | 06-17-2010 |
| 20100144140 | METHODS FOR DEPOSITING TUNGSTEN FILMS HAVING LOW RESISTIVITY FOR GAPFILL APPLICATIONS - Methods of filling gaps or recessed features on substrates are provided. According to various embodiments, the methods involve bulk deposition of tungsten to partially fill the feature followed by a removing a top portion of the deposited tungsten. In particular embodiments, the top portion is removed by exposing the substrate to activated fluorine species. By selectively removing sharp and protruding peaks of the deposited tungsten grains, the removal operation polishes the tungsten along the feature sidewall. Multiple deposition-removal cycles can be used to close the feature. The filled feature is less prone to coring during CMP. | 06-10-2010 |
| 20100120335 | Partial Contact Wafer Retaining Ring Apparatus - The partial contact wafer retaining ring apparatus is disclosed. For example, one disclosed embodiment provides a wafer retaining ring comprising a ring for retaining the wafer, the ring having an inner diameter surface configured to restrict lateral wafer motion, and at least one interface surface configured to interface with a polishing surface. The interface surface comprises a recessed section adjacent to the ring inner diameter, configured to preclude contact between the recessed section and the polishing surface. | 05-13-2010 |
| 20100116672 | METHOD AND APPARATUS FOR ELECTROPLATING - An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect. | 05-13-2010 |
| 20100099271 | METHOD FOR IMPROVING PROCESS CONTROL AND FILM CONFORMALITY OF PECVD FILM - A method for forming a silicon-based dielectric film on a substrate with a single deposition process operation using pulsed plasma enhanced chemical vapor deposition (PECVD) wherein the high frequency radio frequency power of the plasma is pulsed, allows enhanced control, efficiency and product quality of the PECVD process. Pulsing the high frequency RF power of the plasma reduces the deposited film thickness per unit time the high frequency RF power of the plasma is on. This yields silicon-based dielectric films that are both thin and conformal. | 04-22-2010 |
| 20100055904 | METHOD FOR REDUCING TUNGSTEN ROUGHNESS AND IMPROVING REFLECTIVITY - Methods of producing low resistivity tungsten bulk layers having lower roughness and higher reflectivity are provided. The smooth and highly reflective tungsten layers are easier to photopattern than conventional low resistivity tungsten films. The methods involve CVD deposition of tungsten in the presence of alternating nitrogen gas pulses, such that alternating portions of the film are deposited by CVD in the absence of nitrogen and in the presence of nitrogen. According to various embodiments, between 20-90% of the total film thickness is deposited by CVD in the presence of nitrogen. | 03-04-2010 |
| 20100055342 | MODULATED ION-INDUCED ATOMIC LAYER DEPOSITION (MII-ALD) - The present invention relates to a cyclic deposition process suitable for depositing an elemental film. The process employs an enhanced atomic layer deposition technique. | 03-04-2010 |
| 20100044236 | METHOD AND APPARATUS FOR ELECTROPLATING - An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect. | 02-25-2010 |
| 20100035427 | METHODS FOR GROWING LOW-RESISTIVITY TUNGSTEN FILM - Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and/or improving step coverage by exposing the substrate to pulse nucleation layer (PNL) cycles at low temperature. Also in some embodiments, the methods may improve resistivity by using a high temperature PNL cycle of a boron-containing species and a tungsten-containing precursor to finish forming the tungsten nucleation layer. | 02-11-2010 |
| 20100032304 | High Resistance Ionic Current Source - A substantially uniform layer of a metal is electroplated onto a work piece having a seed layer thereon. This is accomplished by employing a “high resistance ionic current source,” which solves the terminal problem by placing a highly resistive membrane (e.g., a microporous ceramic or fretted glass element) in close proximity to the wafer, thereby swamping the system's resistance. The membrane thereby approximates a constant current source. By keeping the wafer close to the membrane surface, the ionic resistance from the top of the membrane to the surface is much less than the ionic path resistance to the wafer edge, substantially compensating for the sheet resistance in the thin metal film and directing additional current over the center and middle of the wafer. | 02-11-2010 |
| 20100029088 | Modulated metal removal using localized wet etching - An apparatus for wet etching metal from a semiconductor wafer comprises a wafer holder for rotating a wafer and a plurality of nozzles for applying separate flow patterns of etching liquid to the surface of the wafer. The flow patterns impact the wafer in distinct band-like impact zones. The flow pattern of etching liquid from at least one nozzle is modulated during a total etching time control the cumulative etching rate in one local etch region relative to the cumulative etching rate in one or more other local etch regions. Some embodiments include a lower etch chamber and an upper rinse chamber separated by a horizontal splash shield. Some embodiments include a retractable vertical splash shield used to prevent splashing of etching liquid onto the inside walls of a treatment container. An etch-liquid delivery system includes a plurality of nozzle flow paths having corresponding nozzle flow resistances, and a plurality of drain flow paths having corresponding drain flow resistances. Nozzle flow resistances and drain flow resistances are matched so that switching the flow from a nozzle to a corresponding drain flow path does not change the flow rate of etching liquid through other nozzles. A non-wafer-contacting measuring device measures a metal thickness on a rotating semiconductor wafer during metal wet etching by immersing a plurality of electrodes in etching liquid in close proximity to the wafer surface of the rotating wafer and determining electrical resistance between a plurality of electrodes. | 02-04-2010 |
| 20100015805 | Wet Etching Methods for Copper Removal and Planarization in Semiconductor Processing - Exposed copper regions on a semiconductor substrate can be etched by a wet etching solution comprising (i) one or more complexing agents selected from the group consisting of bidentate, tridentate, and quadridentate complexing agents; and (ii) an oxidizer, at a pH of between about 5 and 12. In many embodiments, the etching is substantially isotropic and occurs without visible formation of insoluble species on the surface of copper. The etching is useful in a number of processes in semiconductor fabrication, including for partial or complete removal of copper overburden, for planarization of copper surfaces, and for forming recesses in copper-filled damascene features. Examples of suitable etching solutions include solutions comprising a diamine (e.g., ethylenediamine) and/or a triamine (e.g., diethylenetriamine) as bidentate and tridentate complexing agents respectively and hydrogen peroxide as an oxidizer. In some embodiments, the etching solutions further include pH adjustors, such as sulfuric acid, aminoacids, and carboxylic acids. | 01-21-2010 |
| 20100009533 | Conformal Films on Semiconductor Substrates - A layer of diffusion barrier or seed material is deposited on a semiconductor substrate having a recessed feature. The method may include a series of new deposition cycles, for example, a first net deposition cycle and a second net deposition cycle. The first net deposition cycle includes depositing a first deposited amount of the diffusion barrier or seed material and etching a first etched amount of the diffusion barrier or seed material. The second net deposition cycle including depositing a second deposited amount of the diffusion barrier or seed material and etching a second etched amount of the diffusion barrier or seed material. At least one of the process parameters of the first cycle differs from that of the second allows providing a graded deposition effects to reduce a risk of damaging any under layers and dielectric. A deposited layer of diffusion barrier or seed material is generally more conformal. | 01-14-2010 |
| 20100008016 | ELECTROSTATIC CHUCK ASSEMBLY WITH CAPACITIVE SENSE FEATURE, AND RELATED OPERATING METHOD - A semiconductor workpiece processing system for treating a workpiece, such as a semiconductor wafer, is provided. A related operating control method is also provided. The system includes an electrostatic chuck configured to receive a workpiece, and a clamping voltage power supply coupled to the electrostatic chuck. The electrostatic chuck has a clamping electrode assembly, and the clamping voltage power supply is coupled to the clamping electrode assembly. The clamping voltage power supply includes a direct current (DC) voltage generator configured to generate a DC clamping voltage for the clamping electrode assembly, an alternating current (AC) voltage generator configured to generate an AC excitation signal for the clamping electrode assembly, and a processing architecture coupled to the clamping electrode assembly. The processing architecture is configured to analyze attributes of a workpiece presence signal obtained in response to the AC excitation signal, and, based on the attributes, verify proper/improper positioning of the workpiece relative to the electrostatic chuck. | 01-14-2010 |
| 20090291207 | GAS-PURGED VACUUM VALVE - A vacuum valve assembly for use in a vacuum processing chamber includes a seat defining an opening in the vacuum valve, with the seat having a sealing face adjacent the opening and normal to the direction of the opening; and a gate having a sealing face adapted to mate with the seat sealing face, the gate being movable toward and away from the seat sealing face to seal and open the vacuum valve opening. A continuous elastomeric seal extends around the vacuum valve opening between the gate sealing face and the seat sealing face of sufficient size such that when the gate is positioned to seal the vacuum valve opening, there exists a gap between the gate sealing face and the seat sealing face. A purge gas port system, disposed in the seat or in the gate, has an inlet for a purge gas, an essentially continuous outlet extending around the vacuum valve opening and adjacent the elastomeric seal and gap, and a manifold system connecting the inlet and the outlet. When a purge gas is introduced through the inlet, the manifold distributes the gas to the outlet which evenly distributes the gas to the vicinity of the continuous elastomeric seal around the vacuum valve opening in the gap between the gate sealing face and the seat sealing face. | 11-26-2009 |
| 20090286381 | Protective Layer To Enable Damage Free Gap Fill - In-situ semiconductor process that can fill high aspect ratio (typically at least 6:1, for example 7:1 or higher), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps without damaging underlying features and little or no incidence of voids or weak spots is provided. A protective layer is deposited to protect underlying features in regions of the substrate having lower feature density so that unwanted material may be removed from regions of the substrate having higher feature density. This protective layer may deposits thicker on a low density feature than on a high density feature and may be deposited using a PECVD process or low sputter/deposition ratio HDP CVD process. This protective layer may also be a metallic oxide layer that is resistant to fluorine etching, such as zirconium oxide (ZrO | 11-19-2009 |
| 20090283037 | Edge Profiling For Process Chamber Shields - Process chamber shields having specially profiled edges exhibit increased lifetime in PVD and CVD deposition chambers. Edge profiling reduces flaking and delamination of materials deposited onto the shields, thereby prolonging shield life, and, consequently, reducing costs associated with deposition. In one embodiment, a shield having an edge portion terminating in a rounded tip, where the tip has high curvature and a small thickness, is provided. In another aspect, a shield having a concave portion connecting with an edge portion, where an upper (inner) surface of the edge portion forms a tangent plane to the upper (inner) concave surface of the concave surface, is provided. In yet another aspect, a shield with a tapered edge portion is provided. Shields, having profiled edges in accordance with these aspects and in accordance with combinations of these aspects, can better support deposited films, particularly films containing compressively stressed materials, such as metal nitrides. | 11-19-2009 |
| 20090280649 | Topography reduction and control by selective accelerator removal - Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity. | 11-12-2009 |
| 20090280243 | Photoresist-free metal deposition - Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed. | 11-12-2009 |
| 20090277867 | Topography reduction and control by selective accelerator removal - Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity. | 11-12-2009 |
| 20090277802 | Pad-assisted electropolishing - Pad-assisted electropolishing of the substrate is conducted by performing anodic dissolution of metal at a first portion of the substrate and simultaneously mechanically buffing a second portion of the substrate with a buffing pad. Anodic dissolution includes forming a thin liquid layer of electropolishing liquid between the anodic substrate and a cathodic electropolishing head. The location of electrical contacts between the substrate and power supply allow peripheral edge regions of the substrate to be mechanically buffed with the pad. Preferably, a substrate is further planararized using an isotropic material-removal technique. An apparatus includes an electropolishing head that is movable to a position proximate to a first portion of a substrate to form a thin gap, and a buffing pad that mechanically buffs a second portion of the substrate using minimal pressure. | 11-12-2009 |
| 20090277801 | Photoresist-free metal deposition - Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed. | 11-12-2009 |
| 20090277472 | Photoresist Stripping Method and Apparatus - The present invention pertains to methods for removing unwanted material from a work piece. More specifically, the invention pertains to stripping photoresist material from, e.g., a semiconductor wafer during semiconductor manufacturing. Methods involve implementing a pedestal for supporting a wafer, which pedestal has a low emissivity surface to reduce heat transfer by radiation. | 11-12-2009 |
| 20090266707 | Pad-assisted electropolishing - Pad-assisted electropolishing of the substrate is conducted by performing anodic dissolution of metal at a first portion of the substrate and simultaneously mechanically buffing a second portion of the substrate with a buffing pad. Anodic dissolution includes forming a thin liquid layer of electropolishing liquid between the anodic substrate and a cathodic electropolishing head. The location of electrical contacts between the substrate and power supply allow peripheral edge regions of the substrate to be mechanically buffed with the pad. Preferably, a substrate is further planararized using an isotropic material-removal technique. An apparatus includes an electropolishing head that is movable to a position proximate to a first portion of a substrate to form a thin gap, and a buffing pad that mechanically buffs a second portion of the substrate using minimal pressure. | 10-29-2009 |
| 20090263918 | METHODS AND APPARATUSES FOR DETERMINING THICKNESS OF A CONDUCTIVE LAYER - Methods and apparatuses are provided for calibrating eddy current sensors. A calibration curve is formed relating thickness of a conductive layer in a magnetic field to a value measured by the eddy current sensors or a value derived from such measurement, such as argument of impedance. The calibration curve may be an analytic function having infinite number terms, such as trigonometric, hyperbolic, and logarithmic, or a continuous plurality of functions, such as lines. Such curves can reduce the number of wafers used in the calibration of the sensors while providing higher accuracy over a larger thickness range. High accuracy allows the omission of optical sensors, and use of eddy current sensors for endpoint detection, transition call detection, and closed loop control in which a process parameter is changed based on the measured magnetic flux density change in one or more processing zones. | 10-22-2009 |
| 20090250334 | PLASMA GENERATOR SYSTEMS AND METHODS OF FORMING PLASMA - Systems and methods of forming plasma are provided. In an embodiment, a plasma generator system is provided including a container, a single coil disposed around the container, the single coil being a single member and having a first end, a second end, a first winding, and a second winding, wherein the first winding extends from the first end, and the second winding is integrally formed as part of the first winding and extends to the second end, an energy source electrically coupled directly to the first end of the single member, and a capacitor electrically coupled directly to the second end of the single member. | 10-08-2009 |
| 20090239390 | METHODS FOR PRODUCING LOW STRESS POROUS AND CDO LOW-K DIELECTRIC MATERIALS USING PRECURSORS WITH ORGANIC FUNCTIONAL GROUPS - Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules with at least one carbon-carbon triple bond, or carbon-carbon double bond, or a combination of these groups and depositing the carbon doped oxide dielectric layer under conditions in which the resulting dielectric layer has a dielectric constant of not greater than about 2.7. Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precursor has carbon-carbon double or triple bonds. In other cases, one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. In other cases, the structure former precursor has carbon-carbon double or triple bonds and one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. Once the precursor film is formed, the porogen is removed, leaving a porous low-k dielectric matrix with high mechanical strength. Different types of structure former precursors and porogen precursors are described. The resulting low stress low-k porous film may be used as a low-k dielectric film in integrated circuit manufacturing applications. | 09-24-2009 |
| 20090236313 | GAS FLOW DISTRIBUTION RECEPTACLES, PLASMA GENERATOR SYSTEMS, AND METHODS FOR PERFORMING PLASMA STRIPPING PROCESSES - Systems, system components, and methods for plasma stripping are provided. In an embodiment, a gas flow distribution receptacle may have a rounded section that includes an inner surface defining a reception cavity, an outer surface forming an enclosed end, and a centerpoint on the outer surface having a longitudinal axis extending therethrough and through the reception cavity. First and second rings of openings provide flow communication with the plasma chamber. The second ring of openings are disposed between the first ring and the centerpoint, and each opening of the second ring of openings extends between the inner and outer surfaces at a second angle relative to the longitudinal axis that is less than the first angle and has a diameter that is substantially identical to a diameter of an adjacent opening and smaller than the diameters of an opening of the first ring of openings. | 09-24-2009 |
| 20090211900 | Convenient Replacement of Anode in Semiconductor Electroplating Apparatus - The convenient replacement of an anode in a semiconductor electroplating apparatus is disclosed. For example, in one disclosed embodiment, an electroplating system comprises an electroplating cell having an anode chamber, a cathode chamber, a selective transport barrier separating the anode chamber and the cathode chamber, and an anode disposed within the anode chamber. The anode comprises a plurality of pieces of anode material disposed within a removable anode holder. | 08-27-2009 |
| 20090163025 | METHODS FOR FORMING ALL TUNGSTEN CONTACTS AND LINES - Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a halogen-free organometallic tungsten precursor. The mixed tungsten/tungsten carbide layer is a thin, low resistivity film with excellent adhesion and a good base for subsequent tungsten plug or line formation. | 06-25-2009 |
| 20090153144 | FAULT DETECTION APPARATUSES AND METHODS FOR FAULT DETECTION OF SEMICONDUCTOR PROCESSING TOOLS - Fault detection apparatuses and methods for detecting a processing or hardware performance fault of a semiconductor production tool have been provided. In an exemplary embodiment, a method for detecting a fault of a semiconductor production tool comprises sensing a signal associated with a test component of the production tool during operation of the production tool and converting the signal to an electronic test signal. A prerecorded signature signal corresponding to the test component is provided and the test signal and the prerecorded signature signal are compared. | 06-18-2009 |
| 20090149022 | METHOD FOR IMPROVING UNIFORMITY AND ADHESION OF LOW RESISTIVITY TUNGSTEN FILM - Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times. | 06-11-2009 |
| 20090132062 | APPARATUS AND METHODS FOR PRECOMPILING PROGRAM SEQUENCES FOR WAFER PROCESSING - Disclosed are apparatus and methods for embodiments for efficiently and flexibly controlling hardware devices in a semiconductor processing system are provided for use in a distributed control arrangement. In general, the distributed arrangement includes at least one upper-level controller that is configurable with a computer program sequence of instructions for controlling one or more hardware devices of a processing tool. The hardware devices are controlled through one or more lower-level controllers. Prior to execution of the program sequence of the upper-level controller, at least one instruction of this program is pre-compiled so as to translate the instruction for execution by a selected lower-level controller and to add an at least one interlock check to such pre-compiled instruction and make the translated instruction accessible to at least one lower-level controller. The interlock check specifies one or more condition(s) for the selected lower-level controller to execute the pre-compiled instruction. Any number of instructions of the upper-level controller may be translated for use by any number of selected lower-level controllers, where some of the translated instructions include one or more interlock checks. | 05-21-2009 |
| 20090118862 | METHOD AND APPARATUS FOR TEACHING A WORKPIECE TRANSFER ROBOT - A method is provided for teaching a transfer robot used in conjunction with a workpiece processing system including a pedestal assembly, a light sensor having an optical input fixedly coupled to the pedestal assembly, a transfer robot having an end effector, and a processing chamber containing the pedestal assembly and light sensor. The method includes the steps of producing light within the processing chamber, moving the end effector over the optical input such that amount of light reaching the light sensor varies in relation to the position of the end effector, and recording the signal gain as the end effector is moved over the optical input. The method also includes the step of establishing from the recorded signal gain a desired position of the end effector relative to the pedestal assembly. | 05-07-2009 |
| 20090107836 | Closed Contact Electroplating Cup Assembly - Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup. | 04-30-2009 |
| 20090107835 | Rapidly Cleanable Electroplating Cup Assembly - Embodiments of a closed-contact electroplating cup assembly that may be rapidly cleaned while an electroplating system is on-line are disclosed. One disclosed embodiment comprises a cup assembly and a cone assembly, wherein the cup assembly comprises a cup bottom comprising an opening, a seal surrounding the opening, an electrical contact structure comprising a plurality of electrical contacts disposed around the opening, and an interior cup side that is tapered inwardly in along an axial direction of the cup from a cup top toward the cup bottom. | 04-30-2009 |
| 20090095220 | TEMPERATURE CONTROLLED SHOWERHEAD - A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger. | 04-16-2009 |
| 20090081932 | CHEMICAL MECHANICAL POLISHING ASSEMBLY WITH ALTERED POLISHING PAD TOPOGRAPHICAL COMPONENTS - A chemical-mechanical polishing apparatus is provided that creates a uniform kinematical pattern on the surface of a wafer being polished. The apparatus may have a polishing pad comprising a polishing pad surface having a center point that lies within an axis of motion for the polishing pad and a plurality of grooves entrenched in the polishing pad surface and defining a pattern of shapes. The pattern has an axis of symmetry that is offset from the polishing pad surface center point. The apparatus may be operated in a manner such that the kinematics of the CMP process are uniform across the surface of the wafer. | 03-26-2009 |
| 20090053901 | HIGH DOSE IMPLANTATION STRIP (HDIS) IN H2 BASE CHEMISTRY - Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss. | 02-26-2009 |
| 20080318495 | CMP APPARATUSES WITH POLISHING ASSEMBLIES THAT PROVIDE FOR THE PASSIVE REMOVAL OF SLURRY - Chemical mechanical planarization apparatuses with polishing assemblies that provide for the passive removal of slurry are provided. In accordance with an embodiment, a work piece polishing assembly comprises a polishing pad comprising a polishing surface and an exhaust aperture that extends through the polishing pad from the polishing surface and is configured to receive a slurry from the polishing surface. An underlying member is disposed underlying the polishing pad and comprises a peripheral surface. The underlying member comprises a channel that is in fluid communication with the aperture and that opens at the peripheral surface of the underlying member. | 12-25-2008 |
| 20080305717 | PLATEN ASSEMBLY AND WORK PIECE CARRIER HEAD EMPLOYING FLEXIBLE CIRCUIT SENSOR - A platen assembly is provided for supporting a polish pad of the type utilized to planarize a wafer. The platen assembly comprises a sensor system and a polish platen having a first surface for supporting the polish pad. The sensor system comprises a flexible sensor and a flexible circuit operatively coupled to the sensor controller. The flexible circuit includes a first flexible sensor disposed proximate the first surface. | 12-11-2008 |
| 20080286918 | Methods for Fabricating Semiconductor Structures With Backside Stress Layers - Methods for fabricating semiconductor structures with backside stress layers are provided. In one exemplary embodiment, the method comprises the steps of providing a semiconductor device formed on and within a front surface of a semiconductor substrate. The semiconductor device comprises a channel region. A plurality of dielectric layers is formed overlying the semiconductor device. The plurality of dielectric layers comprises conductive connections that are in electrical communication with the semiconductor device. A backside stress layer is formed on a back surface of the semiconductor substrate. The backside stress layer is configured to apply to the channel region of the semiconductor device a uniaxial compressive or tensile stress that, with stresses applied by the plurality of dielectric layers, results in an overall stress exerted on the channel region to achieve a predetermined overall strain of the channel region. | 11-20-2008 |
| 20080264340 | MOVING INTERLEAVED SPUTTER CHAMBER SHIELDS - A shielding system for a physical vapor deposition chamber having a sputter target above the pedestal. The shielding system comprises a pedestal shield attachable to the pedestal and movable therewith. The pedestal shield surrounds and extends outward from the pedestal toward the chamber side or lower walls. The system also comprises a sidewall shield adapted to extend substantially around and within the chamber sidewalls, and downward from an upper portion thereof. The sidewall shield has a lower end extending inward and disposed adjacent the pedestal shield upper portion when the pedestal is in the raised position. The pedestal shield and sidewall shield cooperate, when the pedestal is in the raised position, to prevent line-of-sight deposition transmission from the sputter target to the side and lower walls of the deposition chamber. | 10-30-2008 |
| 20080254639 | METHOD FOR ETCHING ORGANIC HARDMASKS - A method of etching or removing an amorphous carbon organic hardmask overlying a low dielectric constant film in a lithographic process. The method includes providing a dielectric film having thereover an amorphous carbon organic hardmask to be removed, the dielectric film having a dielectric constant no greater than about 4.0, introducing over the amorphous carbon organic hardmask an ionizable gas comprising a mixture of hydrogen and an oxidizing gas, and applying energy to the mixture to create a plasma of the mixture. The method further includes contacting the amorphous carbon organic hardmask with the plasma, with the amorphous carbon organic hardmask being at a temperature in excess of 200° C., to remove the amorphous carbon organic hardmask without substantially harming the underlying substrate. | 10-16-2008 |
| 20080254623 | METHODS FOR GROWING LOW-RESISTIVITY TUNGSTEN FOR HIGH ASPECT RATIO AND SMALL FEATURES - The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained. | 10-16-2008 |
| 20080248656 | METHODS FOR STRIPPING PHOTORESIST AND/OR CLEANING METAL REGIONS - Methods are provided for cleaning metal regions overlying semiconductor substrates. A method for removing material from a metal region comprises heating the metal region, forming a plasma from a gas comprising hydrogen and carbon dioxide, and exposing the metal region to the plasma. | 10-09-2008 |
| 20080216958 | Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same - Plasma reaction apparatus having pre-seasoned showerheads and methods for pre-seasoning a showerhead of a plasma reaction apparatus are provided. In an embodiment, a method for seasoning a showerhead prior to installation in a plasma reaction apparatus comprises cleaning the showerhead, positioning the showerhead in a deposition chamber, and forming a continuous, substantially uniform protective layer on the showerhead. | 09-11-2008 |
| 20080216302 | METHODS UTILIZING ORGANOSILICON COMPOUNDS FOR MANUFACTURING PRE-SEASONED COMPONENTS AND PLASMA REACTION APPARATUSES HAVING PRE-SEASONED COMPONENTS - Methods for pre-seasoning a component of a plasma reaction apparatus and method for fabricating plasma reaction apparatuses are provided. In an embodiment, a method for seasoning a component of a plasma reaction apparatus comprises providing an organosilicon compound, applying the organosilicon compound to the component, removing carbon atoms from the organosilicon compound, and forming a continuous, substantially uniform protective layer on the component, wherein the protective layer comprises silicon from the organosilicon compound. | 09-11-2008 |
| 20080200099 | METHOD FOR MONITORING EDGE EXCLUSION DURING CHEMICAL MECHANICAL PLANARIZATION - A method is provided for measuring edge exclusion on a workpiece that includes a wafer having a film disposed thereon. The method is performed by a CMP system employing a platen and a thickness sensor coupled to the platen and positioned to repeatedly travel a path over the edge of the film during polishing. The method comprises measuring the thickness of the workpiece during selected iterations of the probe path, and establishing from the wafer thickness measurements the length of time the probe is over the film (t | 08-21-2008 |
