| Northrop Grumman Space and Mission Systems Corp. Patent applications |
| Patent application number | Title | Published |
|---|
| 20100184262 | High electron mobility transistor having self-aligned miniature field mitigating plate and protective dielectric layer and fabrication method thereof - A semiconductor device is fabricated to include source and drain contacts including an ohmic metal sunken into the barrier layer and a portion of the channel layer; a protective dielectric layer disposed between the source and drain contacts on the barrier layer; a metallization layer disposed in drain and source ohmic vias between the source contact and the protective dielectric layer and between the protective dielectric layer and the drain contact; and a metal T-gate disposed above the barrier layer including a field mitigating plate disposed on a side portion of a stem of the metal T-gate. | 07-22-2010 |
| 20100052818 | MULTI-CHANNEL SURFACE ACOUSTIC WAVE FILTER DEVICE WITH VOLTAGE CONTROLLED TUNABLE FREQUENCY RESPONSE - A multi-channel surface acoustic wave (SAW) filter includes a voltage controlled velocity tunable piezoelectric substrate, an input transducer fabricated on the substrate, and an output transducer fabricated on the substrate. The input transducer further includes multiple input sub-transducers that are electrically and physically connected in parallel. The output transducer further includes multiple output sub-transducers that are electrically and physically connected in parallel. Corresponding pairs of input sub-transducers and output sub-transducers form multiple parallel channels for SAW propagation. The input transducer produces a voltage controlled tunable COMB frequency response that is combined with a voltage controlled tunable COMB frequency response produced by the output transducer to produce a SAW filter voltage controlled tunable frequency response. Further embodiments include a multi-channel SAW resonator, a SAW filter device connecting two novel SAW filters in series, and a SAW filter device connecting two novel SAW resonators in series. | 03-04-2010 |
| 20090285076 | Diffractive optical element and method of designing the same - A transmissive or reflective diffractive optical element, comprising: a substrate having a top surface, the top surface being etched into a pattern, the pattern including a periodic surface pattern of grooves formed such that when an incoming light beam is shone onto the top surface, the incoming light beam will be split into a plurality of diffracted light beams, the plurality of diffracted light beams including a plurality of primary diffracted order beams and a plurality of secondary diffracted order beams, wherein the primary diffracted order beams have a primary aggregate efficiency above ninety percent, wherein the plurality of secondary diffracted order beams have a secondary aggregate efficiency of lower than ten percent, and wherein a maximum power of the primary diffracted order beams and a minimum power of the primary diffracted order beams differ by at least ten percent of an average power of the primary diffracted order beams. | 11-19-2009 |
| 20090153968 | SPECTRAL BEAM COMBINATION USING BROAD BANDWIDTH LASERS - The present invention provides systems and methods for spectral beam combination by applying a spatial chirp to each of a plurality of input beamlets using a respective plurality of dispersive elements and combining the spatially-chirped beamlets into a single collimated output beam using a dispersive element configured to remove the spatial chirp. In an embodiment, each dispersive element is a grating combined with a lens that is confocal to the grating and also confocal to a Fourier plane upon which a transverse distribution of beam spectral components is produced. A final lens-grating pair includes a lens and a grating, where the lens is confocal to the grating and also confocal to the Fourier plane. | 06-18-2009 |
| 20090108299 | High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof - A semiconductor device includes a T-gate disposed between drain and source regions and above a barrier layer to form a Schottky contact to the channel layer. A first inactive field mitigating plate is disposed above a portion of the T-gate and a second active field plate is disposed above the barrier layer and in a vicinity of the T-gate. | 04-30-2009 |
| 20090074013 | Thulium doped fiber configuration for enhanced high power operation - An optical fiber amplifier includes a laser pump source for generating laser pump light; a fiber including an inner cladding layer optically coupled to a laser pump source for receiving laser pump light; a large mode area (LMA) core surrounded by the inner cladding, the LMA core including a confined region having a predetermined doping concentration of rare-earth ions for undergoing excitation to generate laser light when pumped by the laser pump light; and an outer cladding layer surrounding the inner cladding layer for substantially confining the laser pump light to the inner cladding and the LMA core. In a method of forming the optical fiber amplifier, a ratio of an area of the confined region to an area of the LMA core, and the predetermined doping concentration of the rare earth ions are selected so as to achieve a quantum efficiency (QE) gain factor of approximately 2, but such that the heat dissipation per unit length can be controlled by adjusting the area of the confined region. | 03-19-2009 |
| 20080258242 | Low contact resistance ohmic contact for a high electron mobility transistor and fabrication method thereof - A semiconductor device ( | 10-23-2008 |
| 20080254759 | High linearity frequency conversion system and method - A frequency converter ( | 10-16-2008 |
| 20080219246 | System and method for switching using coordinated phase shifters - A switching circuit ( | 09-11-2008 |
