NORTHERN LIGHTS SEMICONDUCTOR CORP. Patent applications |
Patent application number | Title | Published |
20140042987 | LIGHTNING ENERGY STORAGE SYSTEM - Embodiments of the present invention relate to an apparatus and method for collecting and/or storing electrical energy in lightning. A specific embodiment provides a lightning energy storage system that includes a lightning rod, a wire, a lightning energy harvester, and a ground rod. The lightning rod is configured to attract lightning and transfer electrical energy. The lightning energy harvester incorporates at least one magnetic capacitor and a switch. The ground rod is connected to the wire. A control signal controls the switch to direct the electrical energy to ground through the ground rod or to direct the electrical energy to charge the magnetic capacitor, in response to a charging state of the magnetic capacitor. | 02-13-2014 |
20140042270 | STORAGE SYSTEM FOR STORING STATIC ELECTRICAL ENERGY IN ATMOSPHERE - Embodiments of the invention relate to a system and method for collecting and storing static electrical energy in the atmosphere. An embodiment of the system comprises a control station, an airborne energy harvester with a fuselage, a collecting unit, and a storage module. The control station wireless communicates with the airborne energy harvester to control the movement of the airborne energy harvester. The collecting unit is mounted on a surface of the fuselage to collect the static electrical energy in the atmosphere. The storage module is located inside of the fuselage and includes at least one magnetic capacitor. The static electrical energy collected by the collecting unit is transferred and stored in the at least one magnetic capacitor. | 02-13-2014 |
20100320551 | Magnetoresistive Random Access Memory with Improved Layout Design and Process Thereof - A MRAM memory and process thereof is described. A GMR magnetic layer is patterned to form a memory bit layer and an intermediate conductive layer. The intermediate conductive layer is disposed between two conductive layers such that shallow metal plugs can be utilized to interconnect the intermediate conductive layer and the conductive layers. Thus, a conventional deep tungsten plug process, interconnecting two conductive layers, is eliminated. | 12-23-2010 |
20100193906 | Integrated Circuit Package for Magnetic Capacitor - An integrated circuit package for magnetic capacitor including a substrate, an integrated circuit and a magnetic capacitor unit is disclosed. The substrate has a first surface and an opposite second surface. The integrated circuit is connected to the second surface of the substrate. The magnetic capacitor unit has a positive terminal and a negative terminal connected to the substrate. | 08-05-2010 |
20090295517 | Expandable Energy Storage for Portable Electronic Devices - An expandable energy storage for portable electronic devices is disclosed. The expandable energy storage includes magnetic-capacitor (MCAP) energy storage sticks and a controller. The MCAP energy storage sticks are arranged in parallel and provide electrical power to a portable electronic device. Each MCAP energy storage stick has a positive terminal, a negative terminal, and a controlling terminal for coupling with the portable electronic device. The controller couples the controlling terminals of the MCAP energy storage sticks to a system data terminal. | 12-03-2009 |
20090289289 | DRAM CELL WITH MAGNETIC CAPACITOR - A DRAM cell includes a substrate, a transistor, and a magnetic capacitor. The substrate is composed of semiconductor material with a main surface, the transistor is formed at the main surface, and the magnetic capacitor is formed in a metal layer. The magnetic capacitor includes a first magnetic layer, a dielectric layer formed on the surface of the first magnetic layer, and a second magnetic layer formed on the surface of the dielectric layer. The dielectric layer is a non-conductive material and the first magnetic layer and the second magnetic layer are formed by an alloy of CoNiFe. | 11-26-2009 |
20090278498 | Energy Storage System - An energy storage system includes a battery charger and energy storage devices. The battery charger is connected to a DC/AC current source. The energy storage devices are coupled between the battery charger and subsystems respectively. Each of the energy storage devices includes a magnetic capacitor (MCAP) and an over current protection device (OCPD). MCAPs are charged by the battery charger and supply the electric power to subsystems connected the energy storage devices. OCPDs detect current from MCAPs to subsystems and protect subsystems from excessive currents of voltages. | 11-12-2009 |
20090257168 | Apparatus for Storing Electrical Energy - An apparatus for storing electrical energy includes a first magnetic layer, a second magnetic layer, and a dielectric layer. The first magnetic layer includes a first magnetic section and a second magnetic section. The first magnetic section has magnetic dipoles with horizontal directions. The second magnetic section has magnetic dipoles with vertical directions. The second magnetic layer includes a third magnetic section and a fourth magnetic section. The third magnetic section has magnetic dipoles with horizontal directions. The fourth magnetic section has magnetic dipoles with vertical directions. The dielectric layer is configured between the first magnetic layer and the second magnetic layer. The dielectric layer is arranged to store electrical energy. The first magnetic layer and the second magnetic layer are arranged to prevent electrical energy leakage. The vertical magnetic dipoles in the second magnetic section and the fourth magnetic section are designed to increase the capacitance of the apparatus. | 10-15-2009 |
20090257150 | Apparatus for Storing Electrical Energy - An apparatus for storing electrical energy is provided. The apparatus includes a first magnetic layer, a second magnetic layer, and a dielectric layer. The first magnetic layer has a first surface with saw tooth roughness; the second magnetic layer has a second surface with saw tooth roughness; and the dielectric layer is configured between the first magnetic layer and the second magnetic layer. The dielectric layer is arranged to store electrical energy; the first magnetic layer and the second magnetic layer are arranged to prevent electrical energy leakage; and the saw tooth roughness on the first surface and the second surface is designed to increase the capacitance of the apparatus. | 10-15-2009 |
20090233381 | Interconnect For a GMR Memory Cells And An Underlying Conductive Layer - A conductive plug located in a planar dielectric layer, under GMR memory cells, are used to directly connect the lower ferromagnetic layer of one of the GMR memory cell and a conductive layer under the planar dielectric layer. | 09-17-2009 |
20090051386 | Integrate Circuit Chip with Magnetic Devices - A logic gate array is provided. The logic gate comprises a silicon substrate, a first logic gate layer on top of the silicon substrate, a second logic gate layer on top of the first logic gate layer, and a routing layer between the first and second logic gate layers for routing magnetic gates in the first and second logic gate layers, wherein the first logic gate layer, the second logic gate layer, and the routing layer are electrically connected by vias. | 02-26-2009 |
20090046502 | Metal Magnetic Memory Cell - A magnetic memory cell is provided. The memory cell includes a metal device, a first word line, and a second word line. The metal device includes a first magnetic layer having a first dipole; a second magnetic layer having a second dipole; and an conductive layer located between the first and second magnetic layers. The first word line is positioned near the first magnetic layer to change the direction of the first dipole. The second word line is positioned near the second magnetic layer to change the direction of the second dipole. A method of reading/writing a bit in the magnetic memory cell is also provided. | 02-19-2009 |