| NORTH CHINA UNIVERSITY OF TECHNOLOGY Patent applications |
| Patent application number | Title | Published |
|---|
| 20130015553 | High Voltage Isolation Trench, Its Fabrication Method and MOS DeviceAANM Jiang; YanfengAACI BeijingAACO CNAAGP Jiang; Yanfeng Beijing CN - A type of high voltage isolation trench, its fabrication method and an MOS device are disclosed. The isolation trench includes a trench extending to a buried oxide layer of a wafer, with high concentration N | 01-17-2013 |
| 20120181651 | Temperature Sensor Based on Magnetic Tunneling Junction Device - A temperature sensor, based on magnetic tunneling junction (MTJ) device, includes an MTJ device, a PMOS device and an analog switch. Source electrode of the PMOS device is connected to a power supply; drain electrode of the PMOS device is connected to an input terminal of the MTJ device and is connected to the voltage output terminal of the temperature sensor; an output terminal of the MTJ device is connected to a ground or a circuit via the analog switch; drain electrode of the PMOS device is short circuited with gate electrode of the PMOS device. A negative input terminal of an operational amplifier is connected to the voltage output terminal and a positive input terminal of the operational amplifier is connected to a reference voltage. The sensor is compatible with CMOS process and able to simultaneously perform functions such as temperature detection, over-temperature protection and over-current protection. | 07-19-2012 |
| 20120175704 | Monolithically-Integrated New Dual Surge Protective Device and Its Fabrication Method - A monolithically-integrated dual surge protective device and its fabrication method are disclosed. The exemplary dual surge protective device includes a LDMOS device and a diode assembly which is consisted. of multiple diodes series-wound on back-to-back basis and whose one end is connected to drain electrode of the LDMOS device and the other-end is connected to gate electrode of the LDMOS device. The diode assembly can be fabricated directly in the gate electrode area of the LDMOS device after fabrication of the LDMOS device is completed. The protective device is equivalent to combination of diodes and LDMOS in respect to operating principles and structures, with the advantage of enhanced effect of surge prevention and cost reduction of surge device as it can be integrated into a chip. | 07-12-2012 |
