| NITEK, INC Patent applications |
| Patent application number | Title | Published |
|---|
| 20120034718 | VERTICAL DEEP ULTRAVIOLET LIGHT EMITTING DIODES - A vertical geometry light emitting diode with a strain relieved superlattice layer on a substrate comprising doped Al | 02-09-2012 |
| 20110127571 | MIXED SOURCE GROWTH APPARATUS AND METHOD OF FABRICATING III-NITRIDE ULTRAVIOLET EMITTERS - A device for forming a Group III-V semiconductor on a substrate. The device has a primary chamber comprising a substrate and a heat source for heating the substrate to a first temperature. A secondary chamber comprises a metal source and a second heat source for heating the secondary chamber to a second temperature. A first source is provided which is capable of providing HCl to the secondary chamber wherein the HCl and the metal form metal chloride. A metal-organic source is provided. A metal chloride source is provided which comprises a metal chloride. At least one of the metal chloride, the metal-organic and the second metal chloride react with the nitrogen containing compound to form a Group III-V semiconductor on the substrate. | 06-02-2011 |
| 20110017976 | ULTRAVIOLET LIGHT EMITTING DIODE/LASER DIODE WITH NESTED SUPERLATTICE - A light emitting device with a template comprising a substrate and a nested superlattice. The superlattice has Al | 01-27-2011 |
