| NISSIN ION EQUIPMENT CO., LTD. Patent applications |
| Patent application number | Title | Published |
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| 20120104285 | ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS - An ion implantation method and the like by which a circular implantation region and a peripheral implantation region surrounding it and the dose amount of which is different from that of the circular implantation region can be formed within the surface of the substrate without the use of the step rotation of the substrate. The ion implantation method forms a circular implantation region and a peripheral implantation region surrounding it and a dose amount of which is different from that of the circular implantation region within a surface of the substrate by making variable a scanning speed of the ion beam | 05-03-2012 |
| 20120085918 | ION BEAM IRRADIATION DEVICE AND METHOD FOR SUPPRESSING ION BEAM DIVERGENCE - To improve an efficiency of utilizing electrons and efficiently suppress an ion beam spread by a space charge effect while eliminating a need for a special magnetic pole structure by effectively using a space in the vicinity of a magnet, there are provided an ion source, a collimating magnet and a plurality of electron sources, wherein the electron sources are arranged in a magnetic field gradient region formed on an ion beam upstream side or ion beam downstream side of the collimating magnet and arranged outside a region passed by the ion beam, and an irradiation direction of the electrons is directed to supply the electrons to the magnetic field gradient region. | 04-12-2012 |
| 20120077331 | MANUFACTURING METHOD OF THIN FILM SEMICONDUCTOR SUBSTRATE - A manufacturing method of a thin film semiconductor substrate includes implanting ions at a specified depth into a semiconductor substrate, forming a bubble layer in the semiconductor substrate by vaporizing the ions through heating, bonding an insulating substrate onto the semiconductor substrate, and cleaving the semiconductor substrate along the bubble layer to form a semiconductor thin film on a side of the insulating substrate. At the forming, the semiconductor substrate is heated at a temperature in a temperature range of approximately 1000° C. to 1200° C. for a duration in a range of approximately 10 μs to 100 ms. The heating of the semiconductor substrate is performed by using, for example, a light beam. | 03-29-2012 |
| 20110297843 | ION IMPLANTING APPARATUS AND DEFLECTING ELECTRODE - An ion implanting apparatus includes: an electrostatic accelerating tube for causing an ion beam extracted from an ion source to have a desirable energy, and deflecting the ion beam to be incident on a target, the electrostatic accelerating tube including deflecting electrodes provided to interpose the ion beam therebetween. The deflecting electrodes include a first deflecting electrode and a second deflecting electrode to which different electric potentials from each other are set. The second deflecting electrode is provided on a side where the ion beam is to be deflected and includes an upstream electrode provided on an upstream side of the ion beam and a downstream electrode provided apart from the upstream electrode toward a downstream side. An electric potential of the upstream electrode and an electric potential of the downstream electrode are independently set from each other. | 12-08-2011 |
| 20110248190 | WAFER HANDLING METHOD AND ION IMPLANTER - An ion implanter performs ion implantation by irradiating a wafer having a notch at its outer peripheral region by an ion beam. In ion implanter, a twist angle adjustment mechanism is configured to adjust a twist angle, an aligner is configured to adjust an alignment angle, a wafer transfer device is configured to transfer the wafer between the aligner and the twist angle adjustment mechanism, an image processing device is configured to detect the twist angle of the wafer on the twist angle adjustment mechanism, and a control device is configured to carry out a twist control in which the wafer is rotated by the twist angle adjustment mechanism by an angle obtained from a first difference between the detected twist angle and the alignment angle and a second difference between the alignment angle and a target twist angle given as one of ion implantation conditions. | 10-13-2011 |
| 20110220808 | ION IMPLANTER PROVIDED WITH BEAM DEFLECTOR AND ASYMMETRICAL EINZEL LENS - An ion implanter has a beam deflector having a pair of magnetic poles facing each other in a z direction, insulating members provided on the respective magnetic poles, at least one pair of electrodes provided on the insulating members so as to face each other across a space through which the ion beam passes in the z direction, and at least one power source configured to apply a voltage to the pair of electrodes. The beam deflector is configured to deflect, by a magnetic field, an overall shape of the ion beam so as to be substantially parallel to the x direction. The pair of electrodes have a dimension longer than the dimension of the ion beam in the y direction, and constitute an asymmetrical einzel lens in the direction of travel of the central orbit of the ion beam. | 09-15-2011 |
| 20110215263 | ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS - An ion implantation method and the like by which a circular implantation region and a peripheral implantation region surrounding it and the dose amount of which is different from that of the circular implantation region can be formed within the surface of the substrate without the use of the step rotation of the substrate. The ion implantation method is forms a circular implantation region and a peripheral implantation region surrounding it and a dose amount of which is different from that of the circular implantation region within a surface of the substrate by making variable a scanning speed of the ion beam | 09-08-2011 |
| 20110204250 | MAGNET FOR ION BEAM IRRADIATION APPARATUS EQUIPPED WITH PROTECTIVE MEMBER THAT COVERS PLURALITY OF MAGNETIC FIELD CONCENTRATING MEMBERS - A magnet used in an ion beam irradiation apparatus includes a pair of magnetic poles arranged facing each other on an inner side of the magnet across an ion beam; a plurality of magnetic field concentrating members that are arranged on each of the opposing surfaces of the magnetic poles and that perform a function of trapping electrons between the magnetic poles; and a protective member that covers opposing surfaces of the magnetic field concentrating members. | 08-25-2011 |
| 20110139613 | REPELLER STRUCTURE AND ION SOURCE - A repeller structure is provided in a plasma generating chamber of an ion source facing a cathode that emits electrons for ionizing a source gas in the plasma generating chamber to generate a plasma. The repeller structure reflects the ions toward the cathode. The repeller structure includes a sputtering target that is sputtered by the plasma to emit predetermined ions, the sputtering target including a through hole that connects a sputtering surface and a back surface of the sputtering target; and an electrode body that is inserted in the through hole, the electrode body including a repeller surface that is exposed to the sputtering surface side through the through hole. | 06-16-2011 |
| 20100314552 | ION IMPLANTER - An ion implanter includes an implantation chamber into which an ion beam is introduced, a holder for holding substrates on two columns of a first column and a second column in an X-direction, and a holder driving unit having a function of setting the holder in a horizontal state and then positioning the holder in a substrate exchange position and a function of setting the holder in a standing state and then driving reciprocally and linearly the holder along the X-direction in an irradiation area of the ion beam. Also, the ion implanter includes two load lock mechanisms, and two substrate carrying units equipped with arms, which carry the substrates between the load lock mechanisms and a substrate exchange position respectively, every two arms. | 12-16-2010 |
| 20100140494 | COLLIMATOR MAGNET FOR ION IMPLANTATION SYSTEM - A collimator magnet (CM) usable in an ion implantation system provides an exit ion beam with a large aperture, substantially parallel in one plane or orthogonal planes. The CM includes identical poles, defined by an incident edge receiving an ion beam, and an exit edge outputting the ion beam for implantation. Ion beam deflection takes place due to magnetic forces inside the CM and magnetic field fringe effects outside the CM. The CM incident and/or exit edge is shaped by solving a differential equation to compensate for magnetic field fringe effects and optionally, space charge effects and ion beam initial non-parallelism. The CM shape is obtained by imposing that the incidence or exit angle is substantially constant, or, incidence and exit angles have opposite sign but equal absolute values for each ray in the beam; or the sum of incidence and exit angles is a constant or a non-constant function. | 06-10-2010 |
| 20100129272 | PLASMA GENERATING APPARATUS - The plasma generating apparatus includes: an antenna chamber which is disposed adjacently to a plasma chamber that produces a plasma, and which is exhausted to vacuum; an antenna which is disposed in the antenna chamber, and which radiates a high-frequency wave; a partition plate which is made of an insulator, which separates the plasma chamber from the antenna chamber to block a gas from entering the antenna chamber, and which allows the high-frequency wave radiated from the antenna to pass through the partition plate; and a magnet device which is disposed outside the plasma chamber, and which generates a magnetic field for causing electron cyclotron resonance in the plasma chamber. | 05-27-2010 |
| 20100084584 | ION IMPLANTING APPARATUS - An illuminating device includes: a light source which is disposed outside a vacuum chamber; a light guide which guides the light emitted from the light source, into the vacuum chamber; a light projecting portion which is fixed in the vacuum chamber, and which emits the light guided by the light guide; a light receiving portion which is attached to a support table of a holder driving device, and which receives the light emitted from the light projecting portion in a state where a holder is positioned in a notch detecting position; a light guide which guides the light received by the light receiving portion; and a light emitting device which is attached to the support table, and which irradiates an outer circumferential portion of a substrate with the light guided by the light guide. | 04-08-2010 |
| 20100051825 | ION SOURCE - An ion source includes a plasma generating chamber into which an ionization gas containing fluorine is introduced, a hot cathode provided on one side in the plasma generating chamber, an opposing reflecting electrode which is provided on other side in the plasma generating chamber and reflects electrons when a negative voltage is applied from a bias power supply to the opposing reflecting electrode, and a magnet for generating a magnetic field along a line, which connects the hot cathode and the opposing reflecting electrode, in the plasma generating chamber. The opposing reflecting electrode is formed of an aluminum containing material. | 03-04-2010 |
| 20100038556 | HOT CATHODE AND ION SOURCE INCLUDING THE SAME - A hot cathode includes: a hollow external conductor; a hollow internal conductor which is placed coaxially inside the external conductor; and a connection conductor which electrically connects tip end portions of the conductors. A heating current is folded back through the connection conductor to flow in opposite directions in the external conductor and the internal conductor. | 02-18-2010 |
| 20100015878 | METHOD FOR ASSEMBLING INDIRECTLY-HEATED CATHODE ASSEMBLY - A width of a groove of a cathode holder and a thickness of a cathode conductor are determined so that a dimension which is obtained by subtracting the thickness from the width is equal to a gap length which has a predetermined length, and which is between a filament and a cathode. Then, the cathode holder is rearward pushed to cause a front end face of the groove | 01-21-2010 |
| 20090302214 | ION IMPLANTING APPARATUS AND METHOD OF CORRECTING BEAM ORBIT - An extraction electrode of an ion source is dividedly configured by a first extraction electrode and a second extraction electrode. DC power supplies which form a potential difference between the electrodes, a camera which takes an image of the ion beam to output image data of the ion beam, and a rear-stage beam instrument which measures the beam current of the ion beam that has passed through the analysis slit are disposed. A step of adjusting an analysis electromagnet current so that the beam current measured by the rear-stage beam instrument is maximum, that of processing the image data from the camera to obtain the deviation angle of the ion beam entering the analysis slit from the design beam orbit, and that of, if the deviation angle is not within an allowable range, adjusting the potential difference between the electrodes so that the ion beam is bent to a direction where the deviation angle becomes small, by the potential difference are performed one or more times until the deviation angle is within the allowable range. | 12-10-2009 |
| 20090289193 | ION IMPLANTING APPARATUS AND ION BEAM DEFLECTION ANGLE CORRECTING METHOD - To increase a transport efficiency of an ion beam by correcting Y-direction diffusion caused by the space charge effect of the ion beam between an ion beam deflector, which separates the ion beam and neutrons from each other, and a target. An ion implantation apparatus has a beam paralleling device that bends an ion beam scanned in an X direction by magnetic field to be parallel and draws a ribbon-shaped ion beam. The beam paralleling device serves also as an ion beam deflector that deflects the ion beam by magnetic field to separates neutrons from the ion beam. In the vicinity of an outlet of the beam paralleling device, there is provided an electric field lens having a plurality of electrodes opposed to each other in a Y direction with a space for passing the ion beam and narrowing the ion beam in the Y direction. | 11-26-2009 |
| 20090283703 | ION BEAM IRRADIATION APPARATUS AND ION BEAM MEASURING METHOD - A beam profile monitor is disposed on an orbit of an ion beam, and measures a beam intensity distribution of the ion beam. A pair of beam blocking members are opposed to each other across the ion beam in the x direction, and forms an opening through which the ion beam passes: At least one of the beam blocking members includes a plurality of movable blocking plates disposed without forming a gap in the y direction, and in an independently reciprocable manner in the x direction. A minute opening is formed between the beam blocking members opposed to each other by adjusting the positions of the beam blocking members. From a result of the intensity distribution measurement which is performed by said beam profile monitor on the ion beam passed through the minute opening, the emittance of the ion beam is calculated. | 11-19-2009 |
| 20090256082 | ION IMPLANTING APPARATUS - An ion implanting apparatus is provided. The ion implanting apparatus includes a beam scanner, a beam collimator and a unipotential lens which is disposed between said beam scanner and said beam collimator, and which includes first, second, third, and fourth electrodes arranged in an ion beam traveling direction while forming first, second, and third gaps, said first and fourth electrodes being electrically grounded, wherein positions of centers of curvature of said first and third gaps of said unipotential lens coincide with a position of a scan center of said beam scanner, and wherein a position of a center of curvature of said second gap of said unipotential lens is shifted from the position of the scan center of said beam scanner toward a downstream or upstream side in the ion beam traveling direction. | 10-15-2009 |
| 20090212232 | ION SOURCE AND ION IMPLANTATION APPARATUS - An ion source is to extract a ribbon-shaped ion beam longer in the Y direction in the Z direction and provided with a plasma generating chamber, a plasma electrode which is disposed near the end of the plasma generating chamber in the Z direction and has an ion extracting port extending in the Y direction, a plurality of cathodes for emitting electrons into the plasma generating chamber to generate a plasma and arranged in a plurality of stages along the Y direction, and a magnetic coil which generates magnetic fields along the Z direction in a domain containing the plurality of cathodes inside the plasma generating chamber. | 08-27-2009 |
| 20090203199 | ION BEAM IRRADIATING APPARATUS, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE - An ion beam irradiating apparatus has a field emission electron source | 08-13-2009 |
| 20090200492 | ION IMPLANTATION METHOD AND APPARATUS - Using a beam current of an ion beam, a dose amount to a substrate, and a reference scan speed, a scan number of the substrate is calculated as an integer value in which digits after a decimal point are truncated. If the scan number is smaller than 2, the process is aborted. If the scan number is equal to or larger than 2, it is determined whether the scan number is even or odd. If the scan number is even, the current scan number is set as a practical scan number. If the scan number is odd, an even scan number which is smaller by 1 than the odd scan number is obtained, and the obtained even scan number is set as a practical scan number. A practical scan speed of the substrate is calculated by using the practical scan number, the beam current, and the dose amount. | 08-13-2009 |
| 20090200491 | ION IMPLANTATION METHOD AND APPARATUS - Using a beam current of an ion beam, and a dose amount to a substrate, and an initial value of a scan number of the substrate set to 1, a scan speed of the substrate is calculated. If the scan speed is within the range, the current scan number and the current scan speed are set as a practical scan number and a practical scan speed, respectively. If the scan speed is higher than the upper limit of the range, the calculation process is aborted. If the scan speed is lower than the lower limit of the range, the scan number is incremented by one to calculate a corrected scan number. A corrected scan speed is calculated by using the corrected scan number, etc. The above steps are repeated until the corrected scan speed is within the allowable scan speed range. | 08-13-2009 |
| 20090078890 | ION SOURCE, ION IMPLANTATION APPARATUS, AND ION IMPLANTATION METHOD - This ion source generates a ribbon-like ion beam whose dimension in the Y direction is larger than the dimension in the X direction. This ion source includes a plasma generating vessel having an ion extraction port extending in the Y direction, a plurality of cathodes arranged in a plurality of stages along the Y direction on one side in the X direction in the plasma generating vessel, a reflecting electrode arranged on the other side in the X direction in the plasma generating vessel opposite to the cathodes, and electromagnets for generating magnetic fields along the X direction in regions including the plurality of cathodes in the plasma generating vessel. | 03-26-2009 |
| 20090001290 | Ion Source and Method For Operating Same - An ion source is provided that can generate an ion beam in which the width is wide, the beam current is large, and the uniformity of the beam current distribution in the width direction is high, and that can prolong the lifetime of a cathode. | 01-01-2009 |
| 20080285203 | SUBSTRATE HOLD APPARATUS AND METHOD FOR JUDGING SUBSTRATE PUSH-UP STATE - A substrate hold apparatus is provided an electrostatic chuck for electrostatically attracting and holding a substrate thereon, a push-up member contactable with a position of vicinity of an edge of the substrate on the electrostatic chuck from below for pushing up the substrate, a drive apparatus for driving at least one of the electrostatic chuck and push-up member to thereby allow the push-up member to push up the substrate, a force sensor for detecting a force applied to the push-up member in an pushing-up operation, and a control unit wherein the control unit is configured to measure the force from the force sensor as a first measurement, output a normal state signal when the measured force in the first measurement is equal to or larger than a lower limit value and is equal to or smaller than a upper limit value. | 11-20-2008 |
| 20080218086 | PLASMA GENERATING APPARATUS - A plasma generating apparatus is provided with a plasma generating apparatus for ionizing gas by high frequency discharge within a plasma generating container to thereby generate a plasma and for discharging the plasma to the outside through a plasma discharge hole, an antenna disposed within the plasma generating container for radiating a high frequency wave, an antenna cover made of an insulator and covering a whole of the antenna, a DC voltage measuring device for measuring a DC voltage between the antenna and the plasma generating container, and a comparator for comparing the DC voltage with a reference value, and outputting an alarm signal when an absolute value of the DC voltage value is larger than the absolute value of the reference value. | 09-11-2008 |
