NIPPON STEEL MATERIALS CO., LTD. Patent applications |
Patent application number | Title | Published |
20140173860 | STAINLESS STEEL FOIL FOR FLEXIBLE DISPLAY USE - The present invention provides stainless steel foil for flexible display use which enables fabrication of a TFT substrate for display use which is superior in shape recovery after being rolled up or bent and which is high in surface flatness and is characterized by having a thickness of 20 μm to 200 μm, a surface roughness Ra of 50 nm or less, and a shape recovery of a distortion angle of 10° or less after being wound around a 30 mm diameter cylinder. | 06-26-2014 |
20120223430 | SOLDER BALL FOR SEMICONDUCTOR PACKAGING AND ELECTRONIC MEMBER USING THE SAME - The present invention relates to a solder ball for semiconductor packaging and an electronic member having such solder ball. Specifically there are provided: a solder ball capable of ensuring a sufficient thermal fatigue property even when a diameter thereof is not larger than 250 μm as observed in recent years; and an electronic member having such solder ball. More specifically, there are provided: a solder ball for semiconductor packaging that is made of a solder alloy containing Sn as a main element, 0.1-2.5% Ag by mass, 0.1-1.5% Cu by mass and at least one of Mg, Al and Zn in a total amount of 0.0001-0.005% by mass, such solder ball having a surface including a noncrystalline phase that has a thickness of 1-50 nm and contains at least one of Mg, Al and Zn, O and Sn, and an electronic member having such solder ball. | 09-06-2012 |
20120118610 | BONDING WIRE FOR SEMICONDUCTOR - There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80 nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume. | 05-17-2012 |
20120104613 | BONDING WIRE FOR SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness. | 05-03-2012 |
20120094121 | COPPER ALLOY BONDING WIRE FOR SEMICONDUCTOR - The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities. | 04-19-2012 |
20120038042 | LEAD-FREE SOLDER ALLOY, SOLDER BALL, AND ELECTRONIC MEMBER COMPRISING SOLDER BUMP - A lead-free solder alloy, a solder ball and an electronic member comprising a solder bump which enable the prevention of the occurrence of yellow discoloration on the surface of a solder after soldering, the surface of a solder bump after the formation of the bump in a BGA, and the surface of a solder bump after a burn-in test of a BGA. Specifically disclosed are: a lead-free solder alloy; a solder ball; and an electronic member comprising a solder bump, containing at least one additive element selected from Li, Na, K, Ca, Be, Mg, Sc, Y, lanthanoid series elements, Ti, Zr, Hf, Nb, Ta, Mo, Zn, Al, Ga, In, Si and Mn in the total amount of 1 ppm by mass to 0.1% by mass inclusive, with the remainder being 40% by mass or more of Sn. | 02-16-2012 |
20110308371 | SAW WIRE AND METHOD OF MANUFACTURING SAW WIRE - There are provided a fixed-abrasive grain saw wire with a superior cutting performance and a manufacturing method thereof. Particularly, there are provided a fixed-abrasive grain saw wire with abrasive grains adhered to a metal wire via a Zn-based or Sn-based low-melting-point metal and a high-melting-point metal having a melting point higher than that of the low-melting-point metal, and a manufacturing method thereof. | 12-22-2011 |
20110256051 | METHOD FOR PRODUCING SPHERICAL ALUMINA POWDER - A production method comprising the steps of: spraying an aluminum hydroxide powder having a specific surface area measured by a nitrogen adsorption method of 0.3 m | 10-20-2011 |
20110120594 | BONDING WIRE FOR SEMICONDUCTOR - It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %. | 05-26-2011 |
20110104510 | BONDING STRUCTURE OF BONDING WIRE - The invention is aimed at providing a bonding structure of a copper-based bonding wire, realizing low material cost, high productivity in a continuous bonding in reverse bonding for wedge bonding on bumps, as well as excellent reliability in high-temperature heating, thermal cycle test, reflow test, HAST test or the like. The bonding structure is for connecting the bonding wire onto a ball bump formed on an electrode of a semiconductor device, the bonding wire and the ball bump respectively containing copper as a major component thereof. The bonding structure comprises a concentrated layer A provided at an interface of a bonding part of the ball bump and the bonding wire, wherein the concentration of a metal R other than copper in the concentrated layer A is not less than ten times the average concentration of the metal R in the ball bump; and a concentrated layer B provided at an interface of a bonding part of the ball bump and the electrode, wherein the concentration of the metal R in the concentrated layer B is not less than ten times the average concentration of the metal R in the ball bump. | 05-05-2011 |
20110011619 | BONDING WIRE FOR SEMICONDUCTOR DEVICES - It is an object of the present invention to provide a highly-functional bonding wire which can reduce damages at a neck part, has good linearity of loops, stability of loop heights, and stability of bonded shape of a bonding wire, and can cope with semiconductor packaging techniques, such as low looping, thinning, achievement of a fine pitch, and three-dimensional packaging. A semiconductor-device bonding wire comprises a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. The percentage of <100> orientations in crystalline orientations in the lengthwise direction in the surface of the skin layer is greater than or equal to 50%. | 01-20-2011 |
20110011618 | COPPER ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE - The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm. | 01-20-2011 |
20100327450 | SEMICONDUCTOR DEVICE BONDING WIRE AND WIRE BONDING METHOD - It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness. | 12-30-2010 |
20100294532 | BONDING WIRE FOR SEMICONDUCTOR DEVICES - It is an object of the present invention to provide a highly-functional bonding wire which has good wire-surface nature, loop linearity, stability of loop heights, and stability of a wire bonding shape, and which can cope with semiconductor packaging technologies, such as thinning, achievement of a fine pitch, achievement of a long span, and three-dimensional packaging. A semiconductor-device bonding wire comprises a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. The percentage of <100> orientations in crystalline orientations in the lengthwise direction in the surface of the skin layer is greater than or equal to 50%. | 11-25-2010 |
20100291844 | DRESSER FOR ABRASIVE CLOTH - The invention provides a dresser for an abrasive cloth, which has a smaller abrasive grain diameter than the conventional dresser and has an abrasive grain spacing regulated in a predetermined range depending upon the abrasive grain diameter to simultaneously meet a high level of pad grinding power and a pad flatness and, at the same time, is less likely to cause dropout of abrasive grains. The dresser comprises a plurality of abrasive grains fixed as a single layer on a surface of a metallic support material. The dresser is characterized in that the metallic support material on its surface on which the abrasive grains are fixed has a convex shape, the difference in height between the end part and the central port on the surface is not less than 3 μm and not more than 40 μm, and the center-to-center spacing between at least one set of adjacent grains is d≦L<2d wherein d represents the diameter of the abrasive grains; L represents the center-to-center spacing between adjacent abrasive grains. The diameter (d) of the abrasive grains is preferably 3 μm≦d<100 μm. | 11-18-2010 |
20100282495 | BONDING WIRE FOR SEMICONDUCTOR DEVICE - An object of the present invention is to provide a high-performance bonding wire that is suitable for semiconductor mounting technology, such as stacked chip bonding, thinning, and fine pitch mounting, where wire lean (leaning) at an upright position of a ball and spring failure can be suppressed and loop linearity and loop height stability are excellent. This bonding wire for a semiconductor device includes a core material made of a conductive metal, and a skin layer formed on the core material and containing a metal different from the core material as a main component; wherein a relationship between an average size (a) of crystal grains in the skin layer on a wire surface along a wire circumferential direction and an average size (b) of crystal grains in the core material on a normal cross section, the normal cross section being a cross section normal to a wire axis, satisfies an inequality of a/b≦0.7. | 11-11-2010 |
20100213619 | BONDING STRUCTURE OF BONDING WIRE AND METHOD FOR FORMING SAME - Provided is a bonding structure of a bonding wire and a method for forming the same which can solve problems of conventional technologies in practical application of a multilayer copper wire, improve the formability and bonding characteristic of a ball portion, improve the bonding strength of wedge connection, and have a superior industrial productivity. A bonding wire mainly composed of copper, and a concentrated layer where the concentration of a conductive metal other than copper is high is formed at a ball bonded portion. The concentrated layer is formed in the vicinity of the ball bonded portion or at the interface thereof. An area where the concentration of the conductive metal is 0.05 to 20 mol % has a thickness greater than or equal to 0.1 μm, and it is preferable that the concentration of the conductive metal in the concentrated layer should be five times as much as the average concentration of the conductive metal at the ball bonded portion other than the concentrated layer. | 08-26-2010 |
20100143743 | STAINLESS STEEL SUBSTRATE WITH CONDUCTIVE METAL LAYER, HARD DISK SUSPENSION MATERIAL AND HARD DISK SUSPENSION MANUFACTURED BY USING THE MATERIAL - A stainless steel substrate with one or more conductive metal layers, a method for manufacturing the same, and a hard disk drive suspension material using the same that are excellent in etching accuracy and does not involve the use of any substances casing environmental burdens, while ensuring stable adhesion between the conductive metal layers on the stainless steel substrate and the polyimide-based resin layer. The conductive metal layers are formed to have a total thickness ranging from 0.1 to 10 ?m, a centerline average surface roughness Ra from 0.05 to 1 ?m, and a ten-point average surface roughness Rz from 1 to 5 ?m, respectively. | 06-10-2010 |
20090304545 | LEAD-FREE SOLDER ALLOY, SOLDER BALL AND ELECTRONIC MEMBER, AND LEAD-FREE SOLDER ALLOY, SOLDER BALL AND ELECTRONIC MEMBER FOR AUTOMOBILE-MOUNTED ELECTRONIC MEMBER - A lead-free solder alloy exhibiting good performance in impact resistance and vibration resistance. Also provided are a solder ball using such a lead-free solder alloy, and an electronic member having a solder bump using such a lead-free alloy. Specifically, the lead-free solder alloy consists of 1.0 to 2.0% by mass of Ag, 0.3 to 1.0% by mass of Cu, 0.005 to 0.1% by mass of Ni and the balance including Sn and unavoidable impurities. In an Sn—Ag—Cu based solder joint portion on a Cu electrode, a Cu | 12-10-2009 |
20090196789 | SOLDER ALLOY, SOLDER BALL AND ELECTRONIC MEMBER HAVING SOLDER BUMP - To provide a solder alloy, a solder ball and an electronic member having a solder bump, used for connection with a mother board or the like, having a melting temperature of less than 250° C. for the solder alloy, achieving high drop impact resistance required in mobile devices or the like. A solder alloy is used which consists of not less than 0.1 mass ppm of boron and not greater than 200 mass ppm of boron and a remainder comprising substantially not less than 40% by mass of Sn, in which its melting temperature is less than 250° C. | 08-06-2009 |
20090115059 | GOLD WIRE FOR SEMICONDUCTOR ELEMENT CONNECTION - A gold wire for semiconductor element connection having high strength and bondability. The connection has a limited amount of at least one element selected from calcium and rare earth elements, and a limited amount of at least one element selected from a group consisting of titanium, vanadium, chromium, hafnium, niobium, tungsten, and zirconium. The incorporation of a suitable amount of palladium or beryllium is preferred. The incorporation of calcium and rare earth element can improve the strength and young's modulus of a gold wire, and the incorporation of titanium and the like can reduce a deterioration in the roundness of press-bonded shape of press-bonded balls in the first bonding caused by the incorporation of calcium and rare earth elements. The bonding wire can simultaneously realize mechanical properties and bondability capable of meeting a demand for a size reduction in semiconductor and a reduction in electrode pad pitch. | 05-07-2009 |
20090072399 | SEMICONDUCTOR MOUNTING BONDING WIRE - There is provided a bonding wire which does not cause a leaning failure or the like. A semiconductor mounting bonding wire has a breaking elongation of 7 to 20%, and stress at 1% elongation is greater than or equal to 90% of a tensile strength and is less than or equal to 100% thereof. | 03-19-2009 |
20080311020 | Method for Producing High Purity Silicon - An object of the invention is to provide a method for producing a large amount of inexpensive and high purity silicon useful in a solar battery. The method includes steps of preparing molten silicon, preparing a slag, bringing the molten silicon and the slag into contact with each other, and exposing at least the slag to vacuum pressure. | 12-18-2008 |
20080274031 | Method for Producing High Purity Silicon - The invention relates to a method for producing a great deal of inexpensive high purity silicon useful in a solar battery. Disclosed is a method for producing high purity silicon by removing boron from silicon by oxidization including commencing an oxidization reaction between an oxidizing agent and molten silicon, and cooling at least part of the oxidizing agent during the reaction. | 11-06-2008 |
20080247936 | Method For Producing High Purity Silicon - An object of the present invention is to provide a method for producing a great deal of inexpensive high purity silicon useful in a solar battery. Disclosed is a method for producing the high purity silicon by migrating impurities in molten silicon to slag including the step of feeding an oxidizing agent to the molten silicon together with slag, wherein the oxidizing agent is a material comprising as a primary component at least one of the following materials: alkali metal carbonate, hydrate of alkali metal carbonate, alkali metal hydroxide, alkaline-earth metal carbonate, hydrate of alkaline-earth metal carbonate or alkaline-earth metal hydroxide. | 10-09-2008 |
20080241045 | Method for Producing High Purity Silicon - An object of the invention is to provide a method for producing a large amount of inexpensive high purity silicon useful for a solar battery. Disclosed is a method for producing high purity silicon by migrating impurities in silicon to slag including performing a first slag purification of a first silicon, separating the slag from the first silicon after finishing the first slag purification, and feeding the separated slag to a second molten silicon in a second purification of the second silicon, wherein purity of said second silicon prior to purification is lower than purity of the first silicon after purification. | 10-02-2008 |