Nippon Mining & Metals Co., Ltd. Patent applications |
Patent application number | Title | Published |
20120009374 | Hybrid Silicon Wafer and Method of Producing the Same - Provided is a hybrid silicon wafer in which molten state polycrystalline silicon and solid state single-crystal silicon are mutually integrated, comprising fine crystals having an average crystal grain size of 8 mm or less at a polycrystalline portion within 10 mm from a boundary with a single-crystal portion. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein a columnar single-crystal silicon ingot is sent in a mold in advance, molten silicon is cast around and integrated with the single-crystal ingot to prepare an ingot complex of single-crystal silicon and polycrystalline silicon, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer. | 01-12-2012 |
20120009373 | Hybrid Silicon Wafer and Method of Producing the Same - Provided is a hybrid silicon wafer made of a wafer comprised primarily of two or more types of concentric single-crystal silicon or polycrystalline silicon prepared by mutually integrating one in a molten state and another in a solid state, and having specific resistances that differ by two orders of magnitude or more. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein high specific resistance silicon or an ingot comprised primarily of silicon is disposed at a central portion or a decentered position in a crucible, a nugget or powdered silicon having a specific resistance that is lower by two orders of magnitude or more than the ingot is filled in a void part around the ingot in the crucible, the nugget or powdered silicon is selectively melted and integrated with the ingot to form a complex, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer, or two or more polycrystalline silicon wafers having different functions. | 01-12-2012 |
20110306165 | METHOD FOR PRODUCING a-IGZO OXIDE THIN FILM - There is provided a method for producing an a-IGZO oxide thin film by sputtering, which can control the carrier density of the film to a given value with high reproducibility. The method is an amorphous In—Ga—Zn—O based oxide thin film production method including: providing a sintered oxide material consisting essentially of indium (In), gallium (Ga), zinc (Zn), and oxygen (O) as constituent elements, wherein the ratio [In]/([In]+[Ga]) of the number of indium atoms to the total number of indium and gallium atoms is from 20% to 80%, the ratio [Zn]/([In]+[Ga]+[Zn]) of the number of zinc atoms to the total number of indium, gallium and zinc atoms is from 10% to 50%, and the sintered oxide material has a specific resistance of 1.0×10 | 12-15-2011 |
20110003169 | Non-Adhesive Flexible Laminate - Provided is a non-adhesive flexible laminate comprising a polyimide film at least one surface of which has been plasma-treated, a tie-coat layer formed on the plasma-treated surface, a metal seed layer formed on the tie-coat layer, and a metal conductor layer formed on the metal seed layer, wherein a ratio ρ | 01-06-2011 |
20110002825 | PREPARATION METHOD OF LITHIUM CARBONATE FROM LITHIUM-ION SECONDARY BATTERY RECOVERED MATERIAL - A preparation method of lithium carbonate, in recovering valuable resources of a lithium-ion battery, reducing impurities from lithium carbonate, having a pretreatment process, comprising:
| 01-06-2011 |
20100330325 | Sintered Silicon Wafer - Provided is a sintered silicon wafer in which the maximum crystal grain size is 20μm or less and the average crystal grain size is 1μm or more but not more than 10μm; specifically, provides is a sintered silicon wafer having the following mechanical properties measured by collecting a plurality of test samples from the sintered silicon wafer having a diameter of 400mm or more, namely, the average deflecting strength based on a three-point bending test of 20kgf/mm | 12-30-2010 |
20100323215 | Non-Adhesive-Type Flexible Laminate and Method for Production Thereof - The present invention relates to a non-adhesive-type flexible laminate including a polyimide film with at least one surface thereof being plasma-treated, a tie-coat layer formed on the plasma-treated surface, and a metal conductor layer formed on the tie-coat layer, wherein a proportion (T/Rz) of the tie-coat layer thickness (T) to 10-point mean roughness (Rz) of the plasma-treated polyimide film surface is 2 or more. An object of the invention is not only to improve initial adhesion which is an indicator of adhesion strength of the non-adhesive-type flexible laminate (in particular, a two-layered, flexible laminate), but also to increase adhesion of the laminate after heat aging (after being allowed to stand for 168 hours at 150° C. for 168 hours in the atmosphere). | 12-23-2010 |
20100320085 | Sputtering Target for Producing Metallic Glass Membrane and Manufacturing Method Thereof - A sputtering target for producing a metallic glass membrane characterized in comprising a structure obtained by sintering atomized powder having a composition of a ternary compound system or greater with at least one or more metal elements selected from Pd, Zr, Fe, Co, Cu and Ni as its main component (component of greatest atomic %), and being an average grain size of 50 μm or less. The prepared metallic glass membrane can be used as a substitute for conventional high-cost bulk metallic glass obtained by quenching of molten metal. This sputtering target for producing the metallic glass membrane is also free from problems such as defects in the metallic glass membrane and unevenness of composition, has a uniform structure, can be produced efficiently and at low cost, and does not generate many nodules or particles. Further provided is a method for manufacturing such a sputtering target for forming the metallic glass membrane. | 12-23-2010 |
20100316544 | Method for Collection of Valuable Metal from ITO Scrap - Proposed is a method for collecting valuable metal from an ITO scrap including the steps of subjecting the ITO scrap to electrolysis in pH-adjusted electrolyte, and collecting indium or tin as oxides. Additionally proposed is a method for collecting valuable metal from an ITO scrap including the steps of subjecting the ITO scrap to electrolysis in an electrolytic bath partitioned with a diaphragm or an ion-exchange membrane to precipitate hydroxide of tin, thereafter extracting anolyte temporarily, and precipitating and collecting indium contained in the anolyte as hydroxide. With the methods for collecting valuable metal from an ITO scrap described above, indium or tin may be collected as oxides by roasting the precipitate containing indium or tin. Consequently, provided is a method for efficiently collecting indium from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arisen during the manufacture of such ITO sputtering target. | 12-16-2010 |
20100307923 | Electrolytic Copper Plating Method, Pure Copper Anode for Electrolytic Copper Plating, and Semiconductor Wafer having Low Particle Adhesion Plated with said Method and Anode - The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 μm or less or 60 μm or more. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion. | 12-09-2010 |
20100300878 | Sintered Oxide Compact Target for Sputtering and Process for Producing the same - Provided is a sintered oxide compact target for sputtering comprising indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the composition ratio of the respective elements satisfies the Formula of In | 12-02-2010 |
20100294082 | Method for Collection of Valuable Metal from ITO Scrap - Proposed is a method for collecting valuable metal from an ITO scrap including a step of collecting tin by subjecting the ITO scrap to electrolysis. Further proposed is a method for collecting valuable metal from an ITO scrap including the steps of providing an ITO electrolytic bath and a tin collecting bath, dissolving the ITO scrap in the electrolytic bath, and thereafter collecting tin in the tin collecting bath. Additionally proposed is a method for collecting valuable metal from an ITO scrap including the steps of dissolving the ITO scrap by subjecting it to electrolysis as an anode in electrolyte, precipitating only tin contained in the solution as tin itself or a substance containing tin, extracting the precipitate, placing it in a collecting bath, re-dissolving this to obtain a solution of tin hydroxide, and performing electrolysis or neutralization thereto in order to collect tin. Consequently, provided is a method for efficiently collecting tin from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arising during the manufacture of such ITO sputtering target. | 11-25-2010 |
20100288646 | Method of Recovering Valuable Metals from IZO Scrap - Provided are a method of recovering valuable metals from IZO scrap, wherein indium and zinc are recovered as hydroxides by using an IZO scrap as both an anode and a cathode, and performing electrolysis while periodically reversing polarity; and a method of recovering valuable metals from IZO scrap, wherein the hydroxides of indium and zinc obtained by the electrolysis are roasted and indium and zinc are recovered as oxides. Specifically, provided is a method which enables the efficient recovery of indium and zinc from IZO scrap such as a spent indium-zinc oxide (IZO) sputtering target and IZO mill ends arising during the manufacture of such a sputtering target. | 11-18-2010 |
20100288645 | Method of Recovering Valuable Metals from IZO Scrap - Provided is a method of recovering valuable metals from IZO scrap in which valuable metals are recovered as indium and zinc metals or suboxides by performing electrolysis using an insoluble electrode as an anode and an IZO scrap as a cathode. Specifically, this method enables the efficient recovery of indium and zinc from IZO scrap such as an indium-zinc oxide (IZO) sputtering target or IZO mill ends that arise during the manufacture of such a sputtering target. | 11-18-2010 |
20100282615 | Method of Recovering Valuable Metals from IZO Scrap - Provided are a method of recovering valuable metals from IZO scrap, wherein valuable metals are recovered as hydroxides of indium and zinc by using an insoluble electrode as an anode or a cathode and an IZO scrap as the other cathode or anode as the opposite electrode, and performing electrolysis while periodically reversing polarity; and a method of recovering valuable metals from IZO scrap, wherein the hydroxides of indium and zinc obtained by the electrolysis are roasted and valuable metals are recovered as oxides of indium and zinc. Specifically, provided is a method which enables the efficient recovery of indium and zinc from IZO scrap such as a spent indium-zinc oxide (IZO) sputtering target and IZO mill ends arising during the manufacture of such a sputtering target. | 11-11-2010 |
20100276037 | High strength titanium copper alloy, manufacturing method therefor, and terminal connector using the same - A high strength titanium copper alloy consists of Ti at 2.0% by mass or more to 3.5% by mass or less; the balance of copper and inevitable impurities; an average grain size of 20 μm or less; and a 0.2% proof stress expressed by “b” of 800 N/mm | 11-04-2010 |
20100266863 | Sn-PLATED MATERIALS FOR ELECTRONIC COMPONENTS - There is provided a Sn-plated material comprising a base plated layer made of Ni or a Ni alloy having a thickness of 0.2 to 1.5 μm, an intermediate plated layer made of a Cu—Sn alloy having a thickness of 0.1 to 1.5 μm, and a surface plated layer made of Sn or a Sn alloy having a thickness of 0.1 to 1.5 μm in this order on the surface of copper or a copper alloy, and the mean crystal particle size of the Cu—Sn alloy forming the intermediate plated layer is 0.05 μm or larger but is smaller than 0.5 μm when a cross section of the intermediate plated layer is observed. | 10-21-2010 |
20100240521 | Sputtering Target, Thin Film for Optical Information Recording Medium and Process for Producing the Same - A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying A | 09-23-2010 |
20100221170 | Iron Silicide Powder and Method for Production Thereof - Provided is iron silicide powder in which the content of oxygen as the gas component is 1500 pppm or less, and a method of manufacturing such iron silicide powder including the steps of reducing iron oxide with hydrogen to prepare iron powder, heating the iron powder and Si powder in a non-oxidizing atmosphere to prepare synthetic powder containing FeSi as its primary component, and adding and mixing Si powder once again thereto and heating this in a non-oxidizing atmosphere to prepare iron silicide powder containing FeSi | 09-02-2010 |
20100219070 | Copper Alloy Sputtering Target, Process for Producing the Same and Semiconductor Element Wiring - A copper alloy sputtering target is provided and contains 0.01 to (less than) 0.5 wt % of at least one element selected from Al or Sn, and containing Mn or Si in a total amount of 0.25 wtppm or less. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics. A semiconductor element wiring formed with this target is also provided. | 09-02-2010 |
20100215970 | METHOD FOR SUPPORTING METAL NANOPARTICLES AND METAL NANOPARTICLES-CARRYING SUBSTRATE - A metal nano particle can be supported and immobilized on a substrate uniformly. Thus, disclosed is a method for supporting a nano metal particle, which comprises applying a silane coupling agent having at least one functional group capable of capturing a metal (e.g., an imidazole group, an amino group, a diamino group, a mercapto group, and a vinyl group) in its molecule on a substrate, and then contacting the silane coupling agent with a nano particle of a metal (e.g., gold, platinum, silver, copper, palladium, nickel, cobalt), wherein the silane coupling agent may be produced by the reaction between an azole compound with an epoxysilane compound, and wherein the metal nano particle to be contacted with the silane coupling agent is preferably coated with an ionic fluid. Also disclosed is a substrate having a metal nano particle supported thereon, which is produced by the method. | 08-26-2010 |
20100193372 | Method for Collection of Valuable Metal from ITO Scrap - Proposed is a method for collecting valuable metal from an ITO scrap including the steps of subjecting the ITO scrap to electrolysis and collecting the result as indium-tin alloy. Additionally provided is a method for collecting valuable metal from an ITO scrap including the steps of providing an ITO electrolytic bath and an indium-tin alloy collecting bath, dissolving the ITO in the electrolytic bath, and thereafter collecting indium-tin alloy in the indium-tin alloy collecting bath. These methods enable the efficient collection of indium-tin alloy from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arisen during the manufacture of such ITO sputtering target. | 08-05-2010 |
20100192728 | Spherical Copper Fine Powder and Process for Producing the Same - Provided is spherical copper fine powder in which the average grain size of copper fine powder is 0.05 μm or more and 0.25 μm or less. Additionally provided is a method of producing spherical copper fine powder including the steps of preparing a slurry by adding cuprous oxide to an aqueous medium containing an additive of natural resin, polysaccharide or a derivative thereof, adding 5 to 50% of an acid aqueous solution to the slurry at a time within 15 minutes, and thereby performing disproportionation. The process enables speedy, efficient and stable production of metallic copper particles controlled in particle shape or particle size, particularly copper fine powder having small particles in size. | 08-05-2010 |
20100189636 | Amorphous Film of Composite Oxide, Crystalline Film of Composite Oxide, Method of Producing said Films and Sintered Compact of Composite Oxide - Provided is an amorphous film comprised substantially of indium, tin, magnesium and oxygen, and containing tin at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Mg) and magnesium at a ratio of 0.1 to 2.0% based on an atomicity ratio of Mg/(In+Sn+Mg) with remnant being indium and oxygen, and having a film resistivity of | 07-29-2010 |
20100187661 | Sintered Silicon Wafer - Provided is a sintered silicon wafer, wherein the ratio [I(220)/I(111) . . . (1)] of intensity of a (220) plane and intensity of a (111) plane measured by X-ray diffraction is 0.5 or more and 0.8 or less, and the ratio [I(311)/I(111) . . . (2)] of intensity of a (311) plane and intensity of a (111) plane is 0.3 or more and 0.5 or less. The provided sintered silicon wafer has a smooth surface in which its surface roughness is equivalent to a single crystal silicon. | 07-29-2010 |
20100167407 | Nickel Crucible for Melting Analytical Sample, Method of Preparing Analytical Sample and Method of Analysis - A nickel crucible used for melting an analytical sample in the pretreatment of the analytical sample, characterized in that the purity of the nickel crucible is 99.9999 wt % or higher. Also provided is a method of analysis, comprising melting a sample by the use of the nickel crucible for melting having a purity of 99.9999 wt % or higher, and analyzing the melt to thereby obtain an analytical result in which the respective lower limits of determination of Mn, Al, Si, Mg, Pb, Fe, Co, Ti, Cu, Cr, Zr, Mo, and W are Mn: 5 wtppm, Al: 10 wtppm, Si: 10 wtppm, Mg: 5 wtppm, Pb: 5 wtppm, Fe: 5 wtppm, Co: 5 wtppm, Ti: 20 wtppm, Cu: 20 wtppm, Cr: 10 wtppm, Zr: 5 wtppm, Mo: 2 wtppm, and W:10 wtppm. In light of the recent analytical technology demanded of fast and accurate measurement of high purity materials, high purity analysis is attained through inhibition of mixing of impurities from the crucible. | 07-01-2010 |
20100167000 | Sputtering Target, Thin Film for Optical Information Recording Medium and Process for Producing the Same - A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying A | 07-01-2010 |
20100163425 | Ultrahigh-Purity Copper and Process for Producing the Same - Ultrahigh purity copper having a residual resistance ratio of 38,000 or greater and a purity of 8N or higher (excluding gas components of O, C, N, H, Sand P), and in particular ultrahigh purity copper wherein the respective elements of O, C, N, H, S and P as gas components are 1 ppm or less is provided. A manufacturing method of ultrahigh purity copper is also provided wherein, upon subjecting copper to high purification with the electrolytic method, an anode and a cathode are partitioned with an anion exchange membrane, an anolyte is intermittently or continuously extracted and introduced into an active carbon treatment vessel, a chlorine-containing material is added to the active carbon treatment vessel so as to precipitate impurities as chloride, active carbon is subsequently poured in and agitated so as to adsorb the precipitated impurities, the adsorbed impurities are removed by filtration, and the obtained high purity copper electrolytic solution is intermittently or continuously introduced into the cathode side and electrolyzed. This technology enables the efficient manufacture of ultrahigh purity copper having a purity of 8N (99.999999 wt %) or higher from a copper raw material containing large amounts of impurities by performing electrolysis with a copper-containing solution, and the provision of ultrahigh purity copper obtained thereby. | 07-01-2010 |
20100140570 | Sintered Compact of Composite Oxide, Amorphous Film of Composite Oxide, Process for Producing said Film, Crystalline Film of Composite Oxide and Process for Producing said Film - Provided is an amorphous film substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen. The film can be further crystallized by annealing at a temperature of 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. An ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film is characterized in that it will crystallize by annealing at a temperature of 260° C. or less, which is not such a high temperature, and have low resistivity after being crystallized. Thus, the present invention aims to provide a method of producing such a film and a sintered compact for producing such a film. | 06-10-2010 |
20100136434 | Electrolytic Copper Foil for Lithium Rechargeable Battery and Process for Producing the Copper Foil - An electrolytic copper foil for a lithium rechargeable (secondary) battery, wherein the 0.2% proof stress is 18 to 25 kgf/mm | 06-03-2010 |
20100116093 | METHOD OF RECOVERING SILVER USING ANION-EXCHANGE RESIN - The present invention provides a method of recovering silver safely and efficiently from a chloride or bromide bath containing various metals. Specifically, a method of recovering silver from a hydrochloric acid solution containing alkali and/or alkali earth metal chloride, silver; copper and iron ions, comprising the steps of: (1) bringing the solution into contact with a strong-base anion-exchange resin to adsorb silver; copper, and iron on the anion-exchange resin; (2) then washing the anion-exchange resin with water to remove the adsorbed copper and iron; and (3) then bringing the ion-exchange resin into contact with a hydrochloric acid solution to elute the adsorbed silver, is provided. | 05-13-2010 |
20100101964 | Method of Recovering Valuable Metal from Scrap Containing Conductive Oxide - Proposed is a method of recovering valuable metal from scrap containing conductive oxide including the steps of using an insoluble electrode as either an anode or a cathode, using a scrap containing conductive oxide as the counter cathode or anode, performing electrolysis while periodically inverting the polarity, and recovering the scrap as hydroxide. With the foregoing method of recovering valuable metal from scrap containing conductive oxide, oxide system scrap is conductive oxide and a substance that can be reduced to metal or suboxide with hydrogen. This method enables the efficient recovery of valuable metal from sputtering target scrap containing conductive oxide or scrap such as mill ends of conductive oxide that arise during the production of such a sputtering target. | 04-29-2010 |
20100101963 | Method of Recovering Valuable Metal from Scrap Conductive Oxide - Proposed is a method of recovering valuable metal from scrap containing conductive oxide including the steps of using scrap containing conductive oxide and performing electrolysis while periodically inverting the polarity, and recovering the scrap as hydroxide. With the foregoing method of recovering valuable metal from scrap containing conductive oxide, oxide system scrap is conductive oxide and a substance that can be reduced to metal or suboxide with hydrogen. This method enables to efficiently recover valuable metal from sputtering target scrap containing conductive oxide or scrap such as mill ends of conductive oxide that arise during the production of such a sputtering target. | 04-29-2010 |
20100101687 | High strength copper alloy for electronic parts and electronic parts - A copper base alloy for electronic parts containing 2.0 to 4.0 mass % of Ti and 0.05 to 0.50 mass % of one or more of Fe, Co, Ni, Si, Cr, V, Nb, Zr, B and P, wherein the content of other impurity elements is 0.010 mass % or less in total, and the content of each of C and O is 0.010 mass % or less. This copper base alloy can be used without heat treatment after its press working into a part of a connector or the like; or can be also used in a state in which the alloy is subjected to a specific heat treatment so as to be improved in spring characteristics after its press working. | 04-29-2010 |
20100096271 | Copper Anode or Phosphorous-Containing Copper Anode, Method of Electroplating Copper on Semiconductor Wafer, and Semiconductor Wafer with Low Particle Adhesion - Provided is a copper anode or a phosphorous-containing copper anode for use in performing electroplating copper on a semiconductor wafer, wherein purity of the copper anode or the phosphorous-containing copper anode excluding phosphorous is 99.99 wt % or higher, and silicon as an impurity is 10 wtppm or less. Additionally provided is an electroplating copper method capable of effectively preventing the adhesion of particles on a plating object, particularly onto a semiconductor wafer during electroplating copper, a phosphorous-containing copper anode for use in such electroplating copper, and a semiconductor wafer comprising a copper layer with low particle adhesion formed by the foregoing copper electroplating. | 04-22-2010 |
20100089622 | Barrier Film for Flexible Copper Substrate and Sputtering Target for Forming Barrier Film - A barrier film for a flexible copper substrate comprising a Co—Cr alloy film containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co is provided. The barrier film has a thickness of 3 to 150 nm and a film thickness uniformity of 10% or less at 1σ. A sputtering target for forming a barrier film comprising a Co—Cr alloy containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co is also provided. The relative magnetic permeability in the in-plane direction of the sputtered face of the target is 100 or less. The barrier film for a flexible copper substrate and the sputtering target for forming such barrier film have a film thickness that is thin enough to prevent film peeling and inhibiting the diffusion of copper to a resin film such as polyimide, is capable of obtaining a sufficient barrier effect even in a minute wiring pitch and has barrier characteristics that will not change even when the temperature rises due to heat treatment or the like. | 04-15-2010 |
20100086435 | Cu-Ni-Si SYSTEM ALLOY FOR ELECTRONIC MATERIALS - An object of the present invention is to provide a Corson alloy having significantly improved characteristics, i.e. high strength and high electrical conductivity, by enhancing the effect of addition of Cr to a Cu—Ni—Si system alloy. There is provided a copper alloy for electronic materials comprising 1.0-4.5% by mass Ni, 0.50-1.2% by mass Si, 0.003-0.3% by mass Cr wherein the weight ratio of Ni to Si satisfies the expression: 3≦Ni/Si≦5.5, and the balance being Cu and incidental impurities, wherein particles of Cr—Si compounds having a size of 0.1 μm to 5 μm are dispersed in the alloy and the dispersed particles having an atomic concentration ratio of Cr to Si of 1 to 5 and a dispersion density of no more than 1×10 | 04-08-2010 |
20100084281 | Method for Collection of Valuable Metal from ITO Scrap - Proposed is a method for collecting valuable metal from an ITO scrap by subjecting the ITO scrap to electrolysis and collecting the result as metallic indium. Specifically, the present invention proposes a method for selectively collecting metallic indium including the steps of subjecting the ITO scrap to electrolysis in an electrolytic bath partitioned with a diaphragm or an ion-exchange membrane, subsequently extracting anolyte temporarily, eliminating tin contained in the anolyte by a neutralization method, a replacement method or other methods, placing a solution from which the tin was eliminated in a cathode side again and performing electrolysis thereto; or a method for collecting valuable metal from an ITO scrap including the steps of obtaining a solution of In or Sn in an ITO electrolytic bath, eliminating the Sn in the solution, and collecting In in the collecting bath. These methods enable the efficient collection of metallic indium from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arisen during the manufacture of such ITO sputtering target. | 04-08-2010 |
20100084279 | Method for Collection of Valuable Metal from ITO Scrap - Proposed is a method for collecting valuable metal from an ITO scrap in which a mixture of indium hydroxide and tin hydroxide or metastannic acid is collected by subjecting the ITO scrap to electrolysis in pH-adjusted electrolyte, and roasting this mixture as needed to collect the result as a mixture of indium oxide and tin oxide. This method enables the efficient collection of indium hydroxide and tin hydroxide or metastannic acid, or indium oxide and tin oxide from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arisen during the manufacture of such ITO sputtering target. | 04-08-2010 |
20100072075 | Method of Recovering Valuable Metal from Scrap Containing Conductive Oxide - Provided is a method of recovering valuable metal from oxide system scrap including the steps of performing electrolysis using an insoluble electrode as an anode and an oxide system scrap as a cathode, and recovering the scrap of the cathode as metal or suboxide. Specifically, this method enables the efficient recovery of valuable metal from oxide system scrap of an indium-tin oxide (ITO) sputtering target or oxide system scrap such as mill ends that arise during the production of such a sputtering target. | 03-25-2010 |
20100058827 | Sputtering Target and Manufacturing Method Thereof - A sputtering target manufactured by die forging is provided. It is characterized in that an average crystal grain size D at a portion where an average crystal grain size is the largest and an average crystal grain size d at a portion where an average crystal grain size is the smallest are related as 1.003-11-2010 | |
20100051451 | Roll Unit Dipped in Surface Treatment Liquid - Provided is a roll unit to be dipped in a surface treatment liquid of a copper foil, wherein a bearing box for housing a roil shaft is configured from two bearing boxes that are divisible, one of the bearing boxes is configured from a roll-side bearing box arranged on a roll main body-side and the other bearing box is configured from a shaft end-side bearing box arranged on the shaft end-side of the roll, a shaft sleeve covering an outer periphery of the roll shaft is provided in the roll-side bearing box and an oil seal is provided along an outer periphery of the shaft sleeve, and a bearing for rotatably supporting the shaft is disposed in the shaft end-side bearing box. Specifically, the present invention provides a roll unit to be used in electrochemical surface treatments such as roughening treatment, rust prevention treatment, and oxidized surface treatment (blackening treatment) to be continuously performed on a surface of a rolled copper foil or an electrolytic copper foil, and which is capable of inhibiting the abrasion and corrosion of the roll shaft of such roll unit by controlling the corrosion caused by the infiltration of the treatment liquid, and which enables the simple replacement of the bearing box, bearing, and other components. | 03-04-2010 |
20100044223 | Ytterbium Sputtering Target and Method of Producing said Target - Provided is a method of producing an ytterbium sputtering target, wherein an ytterbium target material having Vickers hardness (Hv) of the material surface of 15 or more and 40 or less is prepared in advance, and a surface of the ytterbium target material having the foregoing surface hardness is subject to final finish processing by way of machining. With the ytterbium sputtering target, present invention aims to remarkably reduce the irregularities (gouges) on the target surface after the final finish processing of the target material, and to inhibit the generation of particles during sputtering. | 02-25-2010 |
20100040873 | Two-Layered Copper-Clad Laminate - A two-layered copper-clad laminate having a copper layer formed on a polyimide film by sputtering and plating, characterized in that the two-layered copper-clad laminate shows a behavior of shrinkage in MD of the copper-clad laminate and expansion in TD of the copper-clad laminate, and a warpage of the materials for the laminate is 20 mm or less, wherein the warpage represents an extent of lift of the two-layered copper-clad laminate of 100 mm square after maintaining 50% humidity at a temperature of 23° C. for 72 hours. With respect to the two-layered CCL having a copper layer provided on a polyimide film by sputtering and plating, there is provided a two-layered CCL material exhibiting a reduced warpage of the laminate and provides a method for manufacturing the same. | 02-18-2010 |
20100031779 | PROCESS FOR RECOVERY OF COPPER FROM COPPER-CONTAINING CHLORIDE MEDIA - A process for recovering copper from an acid aqueous solution containing cupric chlorides and alkali metal and/or alkali earth metal chlorides by a solvent extraction with a cation-exchange extractant, comprising the step of processing a solvent extraction in the presence of sulfate ions. | 02-11-2010 |
20100025236 | Sb-Te Alloy Sintered Compact Target and Manufacturing Method Thereof - Provided is an Sb—Te alloy sintered compact target using atomized powder consisting of substantially spherical particles of an Sb—Te alloy, wherein the spherical atomized powder consists of particles that were crushed and flattened, and the flattened particles exhibiting a ratio (flatness ratio) of short axis and long axis of 0.6 or less occupy 50% or more of the overall particles. With this Sb—Te alloy sintered compact target, particles exhibiting a long axis orientation aligned within ±45° in a direction that is parallel to the target surface occupy 60% or more of the overall particles. In addition, the oxygen concentration in this Sb—Te alloy sintered compact target is 1500 wtppm or less. Thus, the Sb—Te alloy sputtering target structure can be uniformalized and refined, generation of cracks in the sintered target can be inhibited, and generation of arcing during sputtering can be inhibited. Further, surface ruggedness caused by sputter erosion can be reduced in order to obtain a high quality Sb—Te alloy sputtering target. | 02-04-2010 |
20100018273 | Roll Unit for use in Surface Treatment of Copper Foil - Provided is a roll unit for use in a surface treatment of a copper foil, wherein shaft sleeves are fitted to a roll shaft of a roll so that the roll shaft is rotatably supported by a bearing via the shaft sleeves. Additionally provided is a roll unit wherein the shaft sleeves consist of two sleeves, namely a roll-side sleeve arranged on a roll main body side and a tapered sleeve arranged on a shaft end side, an oil seal is arranged between the roll-side sleeve and a bearing box, and the tapered sleeve is supported by a bearing disposed in the bearing box. Thus, this invention relates to a roll unit to be used in electrochemical surface treatments, such as roughening treatment, rust prevention treatment and surface oxidation treatment, to be continuously performed on a surface of a rolled copper foil or an electrolytic copper foil, and in particular relates to a roll unit capable of inhibiting the abrasion and corrosion of the roll shaft of such roll unit and capable of simple replacement of the bearing box, bearing and other components. | 01-28-2010 |
20100016144 | Sintered Silicon Wafer - Provided is a sintered silicon wafer, wherein the volume ratio of silicon oxide contained in the wafer is 0.01% or more and 0.2% or less, the volume ratio of silicon carbide is 0.01% or more and 0.15% or less, and the volume ratio of metal silicide is 0.006% or less. Additionally provided is a sintered silicon wafer having a diameter of 400 mm or more and having the following mechanical properties (1) to (3) measured by collecting a plurality of test samples from the sintered silicon wafers: (1) average value of the deflecting strength based on a three-point bending test is 20 kgf/mm | 01-21-2010 |
20100013096 | Cu-Mn Alloy Sputtering Target and Semiconductor Wiring - Proposed is a Cu—Mn alloy sputtering target, wherein the Mn content is 0.05 to 20 wt %, the total amount of Be, B, Mg, Al, Si, Ca, Ba, La, and Ce is 500 wtppm or less, and the remainder is Cu and unavoidable impurities. Specifically, provided are a copper alloy wiring for semiconductor application, a sputtering target for forming this wiring, and a manufacturing method of a copper alloy wiring for semiconductor application. The copper alloy wiring itself for semiconductor application is equipped with a self-diffusion suppression function for effectively preventing the contamination around the wiring caused by the diffusion of active Cu, improving electromigration (EM) resistance, corrosion resistance and the like, enabling and facilitating the arbitrary formation of a barrier layer, and simplifying the deposition process of the copper alloy wiring for semiconductor application. | 01-21-2010 |
20100000871 | Electrolytic Copper Plating Method, Pure Copper Anode for Electrolytic Copper Plating, and Semiconductor Wafer having Low Particle Adhesion Plated with said Method and Anode - The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 μm or less or 60 μm or more. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion. | 01-07-2010 |
20100000637 | Cu-ni-si system alloy - The present invention provides Cu—Ni—Si system alloys for electronic material that with the addition of other alloy elements minimized, simultaneously exhibits enhanced electric conductivity, strength, bendability and stress relaxation performance. There are provided Cu—Ni—Si system alloys comprising 1.2 to 3.5 mass % Ni, Si in a concentration (mass %) of ⅙ to ¼ of Ni concentration (mass %) and the balance Cu and impurities whose total amount is 0.05 mass % or less, the Cu—Ni—Si system alloys having its configuration of crystal grains and width of a precipitate-free zone regulated so as to fall within appropriate ranges by controlling solution treatment conditions, aging treatment conditions and degree of a reduction ratio. Thus, there can be provided copper alloys strip of 55 to 62% IACS electric conductivity and 550 to 700 MPa tensile strength, being free from cracking at 180° bending test of 0 radius and exhibiting a stress relaxation ratio, as measured on heating at 150° C. for 1000 hr, of 30% or less. | 01-07-2010 |
20090301872 | Sb-Te Base Alloy Sinter Sputtering Target - Provided is an Sb—Te base alloy sinter sputtering target having Sb and Te as its primary component and comprising a structure in which Sb—Te base alloy particles are surrounded by fine carbon or boron particles; wherein, if the mean diameter of the Sb—Te base alloy particles is X and the particle size of carbon or boron is Y, Y/X is within the range of 1/10 to 1/10000. The present invention seeks to improve the Sb—Te base alloy sputtering target structure, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing during the sputtering process. | 12-10-2009 |
20090301614 | CU-NI-SI-CO COPPER ALLOY FOR ELECTRONIC MATERIALS AND METHOD FOR MANUFACTURING SAME - The invention provides Cu—Ni—Si—Co alloys having excellent strength, electrical conductivity, and press-punching properties. In one aspect, the invention is a copper alloy for electronic materials, containing 1.0 to 2.5 mass % of Ni, 0.5 to 2.5 mass % of Co, and 0.30 to 1.2 mass % of Si, the balance being Cu and unavoidable impurities, wherein the copper alloy for electronic material has a [Ni+Co+Si] content in which the median value ρ (mass %) satisfies the formula 20 (mass %)≦ρ≦60 (mass %), the standard deviation σ (Ni+Co+Si) satisfies the formula σ (Ni+Co+Si)≦30 (mass %), and the surface area ratio S (%) satisfies the formula 1%≦S≦10%, in relation to the compositional variation and the surface area ratio of second-phase particles size of 0.1 μm or greater and 1 μm or less when observed in a cross section parallel to a rolling direction. | 12-10-2009 |
20090289218 | LITHIUM-MANGANESE COMPOSITE OXIDES FOR LITHIUM ION BATTERY AND PROCESS FOR PREPARING SAME - A lithium-manganese composite oxide for a lithium ion battery having a good cycle property at high-temperature and battery property of high capacity is provided. | 11-26-2009 |
20090280025 | High-Purity Ru Alloy Target, Process for Producing the Same, and Sputtered Film - An object of the present invention is to provide a high-purity Ru alloy target for sputtering and its manufacturing method, which are capable of reducing harmful substances as much as possible, refining the crystal grains as much as possible so as to make the film thickness distribution during deposition to be uniform, and preventing deterioration in adhesiveness with an Si substrate, and which are suitable in forming a capacitor electrode material of a semiconductor memory, as well as a high-purity Ru alloy sputtered film obtained by sputtering this Ru alloy target. | 11-12-2009 |
20090277788 | Sputtering Target/Backing Plate Bonded Body - Provided is a sputtering target/backing plate assembly having a structure such that pure copper is embedded in a backing plate position at the central portion of the target, within sputtering target/copper-zinc alloy backing plate bonded bodies. Consequently, provided is a simple structure of sputtering target/backing plate capable of sufficiently accommodating further high-power sputtering without deteriorating the characteristics of a copper-zinc alloy backing plate that is inexpensive and excels in strength and anti-eddy current characteristics. | 11-12-2009 |
20090272466 | Ultrahigh-Purity Copper and Process for Producing the Same, and Bonding Wire Comprising Ultrahigh-Purity Copper - Provided is ultrahigh purity copper having a hardness of 40 Hv or less, and a purity of 8N or higher (provided that this excludes the gas components of O, C, N, H, S and P). With this ultrahigh purity copper, the respective elements of O, S and P as gas components are 1 wtppm or less. Also provided is a manufacturing method of ultrahigh purity copper based on two-step electrolysis using an electrolytic solution comprised of copper nitrate solution, including the procedures of adding hydrochloric acid in an electrolytic solution comprised of copper nitrate solution; circulating the electrolytic solution; and performing two-step electrolysis while eliminating impurities with a filter upon temporarily setting the circulating electrolytic solution to a temperature of 10° C. or less. The present invention provides a copper material that is compatible with the thinning (wire drawing) of the above, and is capable of efficiently manufacturing ultrahigh purity copper having a purity of 8N (99.999999 wt %) or higher, providing the obtained ultrahigh purity copper, and providing a bonding wire for use in a semiconductor element that can be thinned. | 11-05-2009 |
20090250669 | Gallium Oxide/Zinc Oxide Sputtering Target, Method of Forming Transparent Conductive Film and Transparent Conductive Film - Provided is a high-density gallium oxide/zinc oxide sintered sputtering target containing 20 massppm or greater of each zirconium oxide and aluminum oxide, wherein the total content thereof is less than 250 ppm. This gallium oxide (Ga | 10-08-2009 |
20090242393 | Nonmagnetic Material Particle Dispersed Ferromagnetic Material Sputtering Target - Provided is a nonmagnetic material particle dispersed ferromagnetic material sputtering target comprising a material including nonmagnetic material particles dispersed in a ferromagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is characterized in that all particles of the nonmagnetic material with a structure observed on the material in its polished face have a shape and size that are smaller than all imaginary circles having a radius of 2 μm formed around an arbitrary point within the nonmagnetic material particles, or that have at least two contact points or intersection points between the imaginary circles and the interface of the ferromagnetic material and the nonmagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is advantageous in that, in the formation of a film by sputtering, the influence of heating or the like on a substrate can be reduced, high-speed deposition by DC sputtering is possible, the film thickness can be regulated to be thin, the generation of particles (dust) or nodules can be reduced during sputtering, the variation in quality can be reduced to improve the mass productivity, fine crystal grains and high density can be realized, and the nonmagnetic material particle dispersed ferromagnetic material sputtering target is particularly best suited for use as a magnetic recording layer. | 10-01-2009 |
20090241736 | Method for recovering metal from ore - The copper sulfide ore is leached in the halide bath without using a special oxidant but with the use of only air. The copper and gold in the copper sulfide ore can be leached at high leaching ratio. | 10-01-2009 |
20090239094 | Cu-Zn Alloy Strip Superior in Thermal Peel Resistance of Sn Plating and Sn Plating Strip Thereof - A Cu—Zn alloy strip and Sn plating strip thereof having improved thermal peel resistance of Sn Plating is provided. In a Cu—Zn alloy strip comprising 15 to 40% by mass of Zn and a balance of Cu and unavoidable impurities, the total concentration of P, As, Sb and Bi is regulated to 100 ppm by mass or less, the total concentration of Ca and Mg is regulated to 100 ppm by mass or less, and the concentrations of O and S are each regulated to 30 ppm by mass or less. | 09-24-2009 |
20090229975 | Target formed of Sintering-Resistant Material of High-Melting Point Metal Alloy, High-Melting Point Metal Silicide, High-Melting Point Metal Carbide, High-Melting Point Metal Nitride, or High-Melting Point Metal Boride, Process for Producing the Target, Assembly of the Sputtering Target-Backing Plate, and Process for Producing the Same - Provided is a target formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride comprising a structure in which a target material formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride and a high-melting point metal plate other than the target material are bonded. Additionally provided is a production method of such a target capable of producing, with relative ease, a target formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride, which has poor machinability, can relatively easily produced. Further the generation of cracks during the target production and high power sputtering, and the reaction of the target raw material with the die during hot pressing can be inhibited effectively, and the warpage of the target can be reduced. | 09-17-2009 |
20090208762 | Copper Foil for Printed Wiring Board - Provided is a copper foil for a printed circuit board comprising a heatproof treatment layer formed on an non-roughened surface of the copper foil to become a joining surface with resin, a chromate coated layer formed on the heatproof treatment layer, and a silane coupling agent layer formed on the chromate coated layer, wherein the Zn amount of the outermost copper foil surface after forming the silane coupling agent layer is 1.5 Atomic % or less, and the Cr amount is 3.0 to 12.0 Atomic %. This copper foil for a printed circuit board is superior in chemical resistance, adhesiveness, and high frequency characteristics. | 08-20-2009 |
20090206303 | Gallium Oxide-Zinc Oxide Sputtering Target, Method for Forming Transparent Conductive Film, and Transparent Conductive Film - Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 2000 mass ppm of zirconium oxide. In a gallium oxide (Ga | 08-20-2009 |
20090200525 | Zinc Oxide Based Transparent Electric Conductor, Sputtering Target for Forming of the Conductor and Process for Producing the Target - Provided is a zinc oxide transparent electric conductor having zinc oxide (ZnO) as its principal component, containing an element to become an n-type dopant to zinc oxide, containing metal M in which P(P=(G+H mix)/RT, wherein G is the Gibbs free energy at temperature T of the metal, H mix is the mixing enthalpy at temperature T of zinc oxide and the metal, R is the gas constant, and T is the temperature) as a parameter showing the wettability with zinc oxide is 6 or less and in which its resistivity is smaller than the resistivity of zinc oxide added with the n-type dopant, and wherein concentration of metal M in relation to the total atomicity of zinc and the n-type dopant and metal M, which are all metal atoms configuring the zinc oxide transparent electric conductor, is 0.05 to 2.0 at %. In the development of a transparent electric conductor that does not contain raw material In which is expensive and with concern of resource depletion, provided is a low resistivity transparent electric conductor by exceeding the limits of the conventional development technique of the single dopant method, presenting guidelines for selecting a secondary additive material effective in achieving low resistivity, and indicating types of specific materials and the appropriate concentration range. | 08-13-2009 |
20090200508 | Lithium Nickel Manganese Cobalt Composite Oxide and Lithium Rechargeable Battery - This invention provides a lithium nickel manganese cobalt composite oxide having a composition of LiaNixMnyCozO | 08-13-2009 |
20090194898 | Hafnium Silicide Target for Forming Gate Oxide Film, and Method for Preparation Thereof - A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi | 08-06-2009 |
20090176125 | Sn-Plated Cu-Ni-Si Alloy Strip - In a Sn-plated strip in which a copper base alloy contains 1.0 to 4.5 mass % of Ni, 0.2 to 1.0 mass % of Si and a balance of Cu and unavoidable impurities, an S concentration and a C concentration in a boundary between a plating layer and the base alloy are adjusted to 0.05 mass % or less, respectively. The base alloy may further contain 0.005 to 3.0 mass % in total of at least one selected from the group consisting of Sn, Zn, Mg, Fe, Mn, Co, Ti, Cr, Zr, Al and Ag. There is provided a Cu—Ni—Si base alloy Sn-plated strip in which the resistance to thermal peel of Sn plating has been improved. | 07-09-2009 |
20090173627 | Sintered Sputtering Target Made of Refractory Metals - Proposed is a sintered sputtering target containing two or more types of refractory metals. In particular, proposed is a sintered sputtering target of refractory metals that is able to improve the target structure to prevent the dropout of metal particles other than the matrix-forming major component, improve the deposition quality as well as the workability of the target by reducing impurities such as gas components, enhancing the density and eliminating the generation of arcing and particles in sputtering. This sintered sputtering target of refractory metals is composed of one or more types of minor components selected from W, Ta and Hf at less than 50 at % as well as at least one or more major components selected from Ru, Rh and Ir and inevitable impurities as the remainder. The metal structure of the major component comprises a granular minor component metal phase, or an alloy phase or a compound phase of the major and the minor component having an average grain size of 100 μm to 500 μm. | 07-09-2009 |
20090166187 | Lithium-Containing Transition Metal Oxide Target, Process for Producing the same and Lithium Ion Thin Film Secondary Battery - Proposed are a lithium-containing transition metal oxide target formed from a sintered compact of lithium-containing transition metal oxides showing a hexagonal crystalline system in which the sintered compact has a relative density of 90% or higher and an average grain size of 1 μm or greater and 50 μm or less, and a lithium-containing transition metal oxide target formed from a sintered compact of lithium-containing transition metal oxides showing a hexagonal crystalline system in which the intensity ratio of the (003) face, (101) face and (104) face based on X-ray diffraction using CuKα ray satisfies the following conditions: (1) Peak intensity ratio of the (101) face in relation to the (003) face is 0.4 or higher and 1.1 or lower; and (2) Peak ratio of the (101) face in relation to the (104) face is 1.0 or higher. In addition to this lithium-containing transition metal oxide target optimal for forming a thin film positive electrode for use in a thin film battery such as a three-dimensional battery and a solid state battery, also proposed are its production method and a lithium ion thin film secondary battery. In particular, the present invention aims to propose a positive electrode target capable of obtaining a thin film with superior homogeneity. | 07-02-2009 |
20090162685 | Rolled Copper or Copper Alloy Foil with Roughened Surface and Method of Roughening Rolled Copper or Copper Alloy Foil - Provided is a rolled copper or copper alloy foil having a roughened surface formed of fine copper particles, obtained by subjecting a rolled copper or copper alloy foil to roughening plating with a plating bath containing copper sulfate (Cu equivalent of 1 to 50 g/L), 1 to 150 g/L of sulfuric acid, and one or more additives selected among sodium octyl sulfate, sodium decyl sulfate, and sodium dodecyl sulfate under the conditions of a temperature of 20 to 50° C. and a current density of 10 to 100 A/dm | 06-25-2009 |
20090140430 | Copper Alloy Sputtering Target and Semiconductor Element Wiring - A first copper alloy sputtering target comprising 0.5 to 4.0 wt % of Al and 0.5 wtppm or less of Si and a second copper alloy sputtering target comprising 0.5 to 4.0 wt % of Sn and 0.5 wtppm or less of Mn are disclosed. The first and/or the second alloy sputtering target can further comprise one or more elements selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less. A semiconductor element wiring formed by the use of the above targets is also disclosed. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics. | 06-04-2009 |
20090139863 | Copper Alloy Sputtering Target and Semiconductor Element Wiring - A first copper alloy sputtering target comprising 0.5 to 4.0 wt % of Al and 0.5 wtppm or less of Si and a second copper alloy sputtering target comprising 0.5 to 4.0 wt % of Sn and 0.5 wtppm or less of Mn are disclosed. The first and/or the second alloy sputtering target can further comprise one or more elements selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less. A semiconductor element wiring formed by the use of the above targets is also disclosed. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics. | 06-04-2009 |
20090139859 | Chromic Oxide Powder for Sputtering Target, and Sputtering Target Manufactured from such Chromic Oxide Powder - Provided is chromic oxide powder for a sputtering target comprised of chromic oxide wherein sulfur is 100 wtppm or less. This sputtering target contains chromic oxide of 5 molar % or higher or chromic oxide, wherein the sulfur content in the sputtering target is 100 wtppm or less, and the purity excluding gas components of moisture, carbon, nitrogen and sulfur is 99.95 wt % or higher. The chromic oxide powder for a sputtering target is able to increase the purity of the chromic oxide itself as well as increase the sintered density upon manufacturing a sputtering target. As a result of manufacturing a sputtering target using this chromic oxide powder, the crystal grains are refined, and provided is a uniform and dense sputtering target that does not generate cracks. | 06-04-2009 |
20090139858 | Sputtering Target for Producing Metallic Glass Membrane and Manufacturing Method Thereof - A sputtering target for producing a metallic glass membrane characterized in comprising a structure obtained by sintering atomized powder having a composition of a ternary compound system or greater with at least one or more metal elements selected from Pd, Zr, Fe, Co, Cu and Ni as its main component (component of greatest atomic %), and being an average grain size of 50 μm or less. The prepared metallic glass membrane can be used as a substitute for conventional high-cost bulk metallic glass obtained by quenching of molten metal. This sputtering target for producing the metallic glass membrane is also free from problems such as defects in the metallic glass membrane and unevenness of composition, has a uniform structure, can be produced efficiently and at low cost, and does not generate many nodules or particles. Further provided is a method for manufacturing such a sputtering target for forming the metallic glass membrane. | 06-04-2009 |
20090134021 | Sputtering Target - Provided is a tantalum or a tantalum alloy target capable of shortening the burn-in time and minimizing the fluctuation in the deposition speed throughout the target life, whereby the production efficiency of semiconductors in the sputtering process can be improved and stabilized, and the production cost can be significantly reduced. With tantalum or tantalum-based alloy sputtering target, provided is a sputtering target, wherein FWHM (full width of half maximum) of a {200} crystal plane measured by X-ray diffraction of the sputtered outermost surface is 0.1 to 0.6, or a sputtering target according to claim | 05-28-2009 |
20090130480 | Sn-Plated Copper Alloy Strip Having Improved Fatigue Characteristics - The object of the invention is to provide a reflow Sn-plated copper alloy strip having improved fatigue characteristics by preventing the degradation of fatigue characteristics caused by reflow Sn plating. The invention provides a copper alloy strip having an Sn or Sn alloy plating film formed thereon by electroplating and reflowing treatment, wherein average hydrogen concentration in the strip being about 2 mass ppm or less. | 05-21-2009 |
20090126529 | Highly Pure Hafnium Material, Target and Thin Film Comprising the Same and Method for Producing Highly Pure Hafnium - A method of manufacturing high purity hafnium is provided and includes the steps of making aqueous solution of chloride of hafnium, thereafter removing zirconium therefrom via solvent extraction, performing neutralization treatment to obtain hafnium oxide, further performing chlorination to obtain hafnium chloride, obtaining hafnium sponge via reducing said hafnium chloride, and performing electron beam melting to the hafnium sponge in order to obtain a hafnium ingot, as well as a high purity hafnium material obtained thereby and a target and thin film formed from such material. The present invention relates to a high purity hafnium material with reduced zirconium content contained in the hafnium, a target and thin film formed from such material, and the manufacturing method thereof, and provides efficient and stable manufacturing technology, a high purity hafnium material obtained according to such manufacturing technology, and a target and high purity hafnium thin film formed from such material. | 05-21-2009 |
20090121198 | Cathode Material for Lithium Secondary Battery and Manufacturing Method Thereof - Provided is a cathode material for a lithium secondary battery composed of an aggregate of Li-A-O composite oxide particles (wherein A represents one or more metal elements selected from Mn, Fe, Co and Ni), wherein the lithium composite oxide contains 20 to 100 ppm (by mass) of P, and the total content of impurity elements excluding essential components is 2000 ppm or less. Also provided is a manufacturing method of such a cathode material for a lithium secondary battery including the steps of suspending lithium carbonate in water and thereafter introducing a metallic salt solution of one or more metal elements selected from Mn, Fe, Co and Ni in the lithium carbonate suspension, adding a small amount of phosphoric acid so that the P content in the Li-A-O composite oxide particles will be 20 to 100 ppm (by mass), and forming an aggregate of Li-A-O composite oxide particles containing 20 to 100 ppm (by mass) of P by filtering, cleansing, drying and thereafter oxidizing the obtained carbonate. This cathode material for a lithium secondary battery and its manufacturing method realize improved sinterability and battery characteristics. | 05-14-2009 |
20090120786 | Gallium Oxide-Zinc Oxide Sputtering Target, Method of Forming Transparent Conductive Film, and Transparent Conductive Film - Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 500 mass ppm of aluminum oxide, In a gallium oxide (Ga | 05-14-2009 |
20090114535 | Ruthenium-Alloy Sputtering Target - Provided is a ruthenium alloy sputtering target as a ruthenium alloy sintered compact target obtained by sintering mixed powder of ruthenium powder and metal powder capable of creating oxides easier than ruthenium, wherein purity of the target excluding gas components is 99.95 wt % or higher, said target contains 5 at % to 60 at % of metal capable of creating oxides easier than ruthenium, relative density is 99% or higher, and oxygen content as impurities is 1000 ppm or less. This ruthenium alloy sputtering target is capable of reducing its oxygen content, reducing the generation of arcing and particles during sputtering, increasing the target strength by improving the sintered density, and improving the deposition quality by strictly restricting the amount of B and P impurities in the target in order to prevent the compositional variability of B and P added in minute amounts to the Si semiconductor. | 05-07-2009 |
20090104107 | Methods of making and washing scorodite - A method of making scorodite includes the following steps: (1) an acidic aqueous solution containing pentavalent As and trivalent Fe is heated at a temperature for a time, the temperature and the time being effective for synthesis of crystalline scorodite; (2) the synthesized scorodite is separated from the post-reaction solution by solid-liquid separation; and (3) the scorodite is washed with water and is separated from the washing solution by solid-liquid separation. Step (3) is repeated until the concentration of at least one component of the post-reaction solution contained in the washing solution used for washing the scorodite decreases to a predetermined level. | 04-23-2009 |
20090104082 | Zirconium Crucible for Melting Analytical Sample, Method of Preparing Analytical Sample and Method of Analysis - Proposed is a zirconium crucible used for melting an analytical sample in the pretreatment of the analytical sample, wherein the purity of the zirconium crucible is 99.99 wt % or higher. in light of the recent analytical technology demanded of fast and accurate measurement of high purity materials, the present invention provides a zirconium crucible for melting an analytical sample, a method of preparing such analytical sample, and a method of analysis that enables the analysis of high purity materials by inhibiting the inclusion of impurities from the crucible regardless of difference in the analysts and their skill. | 04-23-2009 |
20090098012 | High-Purity Tin or Tin Alloy and Process for Producing High-Purity Tin - Provided is high purity tin or tin alloy wherein the respective contents of U and Th are 5 ppb or less, the respective contents of Pb and Bi are 1 ppm or less, and the purity is 5N or higher (provided that this excludes the gas components of O, C, N, H, S and P). This high purity tin or tin alloy is characterized in that the α ray count of high purity tin having a cast structure is 0.001 cph/cm | 04-16-2009 |
20090092851 | Heat-Resistant Sn-Plated Cu-Zn Alloy Strip with Suppressed Whiskering - In an Sn-plated strip in which a copper alloy containing 15 to 40 mass % of Zn in terms of an average concentration is used as an alloy strip and the layers of an Sn phase, an Sn—Cu alloy phase and an Ni phase constitute a plating film from the surface to the alloy strip, the Zn concentration of the surface of the Sn phase is adjusted to a range of 0.1 to 5.0 mass %. The alloy may further contain 0.005 to 3.0 mass % in total of an arbitrary constituent selected from Sn, Ag, Pb, Fe, Ni, Mn, Si, Al and Ti. Moreover, the alloy may be a copper base alloy containing 15 to 40 mass % of Zn, 8 to 20 mass % of Ni, 0 to 0.5 mass % of Mn and a balance of Cu and unavoidable impurities, and may further contain 0.005 to 10 mass % in total of the above arbitrary constituent. There is provided a Cu/Ni double layer base reflowed Sn-plated Cu—Zn alloy strip in which generation of whiskers is suppressed. | 04-09-2009 |
20090090621 | Erbium Sputtering Target and Manufacturing Method - Technology for efficiently and stably providing an erbium sputtering target with low generation of particles during sputtering and capable of achieving favorable uniformity of the sputtered film, as well as a method for manufacturing such an erbium sputtering target is provided. More specifically, an erbium sputtering target is manufactured by forging and heat treatment, wherein the target purity is 3N5 or higher, and the average grain size of crystals observed in the target structure is 1 to 20 mm. The method of manufacturing an erbium sputtering target includes the steps of subjecting a vacuum-cast ingot having a purity of 3N5 or higher to constant temperature forging within a temperature range of 1100 to 1200° C., subsequently subjecting the forged target material to heat treatment at a temperature of 800 to 1200° C., adjusting the target purity to be 3N5 or higher and the average grain size of the target structure to be 1 to 20 mm, and cutting this out to obtain a target. | 04-09-2009 |
20090085014 | Zinc Oxide-Based Transparent Conductor and Sputtering Target for forming the Transparent Conductor - Proposed is a zinc oxide-based transparent conductor characterized in having zinc oxide as its primary component, containing an element at 1 to 10 atomic % which has a smaller ion radius than zinc in the zinc oxide and serves as an n-type dopant for the zinc oxide, and containing nitrogen in which the atomicity ratio of nitrogen in relation to the n-type dopant (nitrogen/n-type dopant) is 0.3 to 0.6. In the development of a transparent conductor that does not contain In, which is an expensive raw material with concern of resource depletion, the limit of the conventional development technique known as the single-dopant method is exceeded, a guide to dopant selection as a specific means for realizing the co-doping theory is indicated, and a transparent conductor having low resistivity is provided. | 04-02-2009 |
20090078584 | Process for producing scorodite and recycling the post-scorodite-synthesis solution - The present invention is to provide a process for producing a scorodite that can shorten the time required for synthesizing the scorodite, and further can improve the yield of arsenic and iron into the scorodite. Accordingly, a process for producing a crystalline scorodite from an acidic aqueous solution containing pentavalent As and trivalent Fe, wherein the synthesis of the crystalline scorodite is performed after the molar ratio of trivalent Fe to pentavalent As contained in the acidic aqueous solution is adjusted to be equal to or more than 0.9 and equal to or less than 1.1 is provided. | 03-26-2009 |
20090071821 | Sb-Te Alloy Powder for Sintering, Sintered Compact Sputtering Target Obtained by Sintering said Powder, and Manufacturing Method of Sb-Te Alloy Powder for Sintering - Provided is Sb—Te alloy powder for sintering in which the maximum grain size of the powder obtained by subjecting gas atomized powder of an Sb—Te alloy to mechanical pulverization is 90μm or less, and a sintered compact sputtering target obtained by sintering this powder. Further provided is a manufacturing method of Sb—Te alloy powder for a sintered compact sputtering target including the steps of dissolving an Sb—Te alloy, thereafter subjecting this to gas atomization to obtain atomized powder, and further subjecting this to mechanical pulverization in an inert atmosphere without any atmospheric exposure so as to manufacture powder having a maximum grain size of 90 μm or less and reduced oxygen content. Thus, the Sb—Te alloy sputtering target structure can be uniformalized and refined, generation of cracks in the sintered target can be inhibited, and generation of arcing during sputtering can be inhibited. Further, surface ruggedness caused by sputter erosion can be reduced in order to obtain a high quality Sb—Te alloy sputtering target. | 03-19-2009 |
20090064861 | Hydrogen Separation Membrane, Sputtering Target for forming said Hydrogen Separation Membrane, and Manufacturing Method Thereof - Provided is a hydrogen separation membrane characterized by comprising a structure obtained by sintering atomized powder having a composition of Ni | 03-12-2009 |
20090057142 | Hafnium Alloy Target and Process for Producing the Same - A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf; wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof. | 03-05-2009 |
20090057139 | Pot-Shaped Copper Sputtering Target and Manufacturing Method Thereof - Provided is a pot-shaped copper sputtering target manufactured with die forging, wherein the Vickers hardness Hv at all locations of the inner surface of the pot-shaped target is 70 or greater. With this pot-shaped copper sputtering target, the average crystal grain size in the target structure is 65 μm or less. Further, the inner surface of the pot-shaped target comprises crystalline orientations of (220), (111), (200), (311) obtained by X-ray diffraction, and the crystalline orientation of the face subject to erosion of the pot-shaped target is of a (220) primary orientation. An object of the present invention is to obtain a manufacturing method of a high quality sputtering target by improving and devising the forging process and heat treatment process to make the crystal grain size refined and uniform, and to obtain a high-quality sputtering target. | 03-05-2009 |
20090055009 | Method for Determining Machining Plane of Planar Material, Machining Method and Device for Determining Machining Plane and Flat Surface Machining Device - Provided is a surface machining method for performing machining such as cutting, grinding, electrical discharging or the like to obtain a planar material of a uniform thickness. This method includes the steps of mounting a planar material on a surface plate, setting the coordinate axis in the plane direction of the planar material to X, Y, and setting the coordinate axis in the height direction of the planar material to Z, virtualizing an XY plane including an origin of the Z direction measured as a distance (height) Z | 02-26-2009 |
20090053112 | Zirconium Crucible - In light of the recent analytical technology demanded of fast and accurate measurement of high purity materials, a zirconium crucible is provided for melting an analytical sample and is capable of inhibiting the inclusion of impurities from the crucible by using a high-purity crucible, improving the durability of high-purity zirconium as an expensive crucible material, and increasing the number of times that the zirconium crucible can be used. With this zirconium crucible used for melting an analytical sample in the pretreatment of the analytical sample, the purity excluding gas components is 3N or higher, and the content of carbon as a gas component is 100 mass ppm or less. | 02-26-2009 |
20090050475 | Hafnium Alloy Target and Process for Producing the Same - A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm−10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof. | 02-26-2009 |
20090042021 | Metal-Coated Lipid Bilayer Vesicles and Process for Producing Same - A metal-coated material comprising a metal-coated lipid bilayer vesicle and a preparation method thereof are provided. A metal-coated material comprising a metal-coated lipid bilayer vesicle having a network of siloxane bonding (Si—O—Si) on its surface. a method for preparing the metal-coated lipid bilayer vesicle comprising the following steps:
| 02-12-2009 |
20090035174 | Copper Alloy for Electronic Materials - The invention provides Cu—Ni—Si alloys containing Co, and having excellent strength and conductivity. A copper alloy for electronic materials in accordance with the invention contains about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si ([Ni+Co]/Si ratio) satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co (Ni/Co ratio) satisfies the formula: about 0.5≦Ni/Co≦about 2. | 02-05-2009 |
20090032392 | Sputtering Target - Provided is a sputtering target in which the ratio of X-ray intensity of (110) measured with X-ray diffraction is 0.4 or less, and even 0.2 or less in a Ta or Ta alloy target. Further provided is a sputtering target in which the ratio of X-ray intensity of (110) on a Ta or Ta alloy target surface measured with X-ray diffraction is 0.8 or less, and the ratio of the foregoing X-ray intensity at a depth of 100 μm or deeper is 0.4 or less. This Ta or Ta alloy target is capable of minimizing the fluctuation of the deposition speed for each target throughout the target life of a sputtering target, and thereby improving and stabilizing the production efficiency of semiconductors during the sputtering process, and contributing to the reduction of production costs. | 02-05-2009 |
20090025840 | Cu-Ni-Si-Co-Cr Copper Alloy for Electronic Materials and Method for Manufacturing Same - The invention provides Cu—Ni—Si—Co—Cr copper alloys for electronic materials having excellent characteristics such as dramatically improved strength and electrical conductivity. In one aspect, the invention is a Cu—Ni—Si—Co—Cr copper alloy for electronic materials, containing about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and about 0.09-about 0.5% by weight of Cr, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si in the alloy composition satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co in the alloy composition satisfies the formula: about 0.5≦Ni/Co≦about 2, and wherein Pc is equal to or less than about 15/1000 μm | 01-29-2009 |
20090022993 | Copper alloy - Copper alloys having excellent strength while suppressing irregularity of wavelengths, etc., of the fluctuations and having excellent bendability are obtained while suppressing growth of crystal grains. The copper-based alloy contains 2.0 to 4.0 mass % of Ti, and the total content of unavoidable impurity elements Pb, Sn, Zn, Mn, Fe, Co, Ni, S, Si, Al, P, As, Se, Te, Sb, Bi, Au, and Ag is not more than 0.1 mass %, and contents of each element thereof is not more than 0.01 mass %, and not less than 80% of quality of a second-phase particles having an area of not less than 0.01 μm | 01-22-2009 |
20090008245 | Method for Connecting Magnetic Substance Target to Backing Plate, and Magnetic Substance Target - A method for connecting a magnetic substance target to a backing plate with less variation in plate thickness, characterized in having the steps of connecting the magnetic substance target to an aluminum plate beforehand while maintaining the flatness, connecting the magnetic substance target connected to the aluminum plate to the backing plate while maintaining the flatness, and grinding out the aluminum plate, whereby the flatness of the magnetic substance target can be maintained until the magnetic substance target is connected to the backing plate by a relatively simple operation. | 01-08-2009 |
20090004498 | Manufacturing Method of High Purity Nickel, High Purity Nickel, Sputtering Target formed from said High Purity Nickel, and Thin Film formed with said Sputtering Target - Upon performing electrolysis with a solution containing nickel as the electrolytic solution, anolyte is adjusted to pH 2 to 5; impurities such as iron, cobalt and copper contained in the anolyte are eliminated by combining any one or two or more of the methods among adding an oxidizing agent and precipitating and eliminating the impurities as hydroxide, eliminating the impurities through preliminary electrolysis, or adding Ni foil and eliminating the impurities through displacement reaction; impurities are thereafter further eliminated with a filter; and the impurity-free solution is employed as catholyte to perform the electrolysis. The present invention relates to a simple method of performing electrolytic refining employing a solution containing nickel from nickel raw material containing a substantial amount of impurities, and provides technology on efficiently manufacturing high purity nickel having a purity of 5N (99.999 wt %) or more. | 01-01-2009 |
20090000704 | Hafnium Alloy Target and Process for Producing the Same - A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof. | 01-01-2009 |
20080299415 | Sputtering Target, Thin Film for Optical Information Recording Medium and Process for Producing the Same - A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying A | 12-04-2008 |
20080277032 | COPPER, COPPER ALLOY, AND MANUFACTURING METHOD THEREFOR - Copper and copper alloy comprises: a structure having fine crystal grains with grain size of 1 μm or less after a final cold rolling with a reduction η, wherein η is expressed in the following formula and satisfying η≧3; and an elongation of 2% or more in a tensile test. | 11-13-2008 |
20080247935 | Compound Semiconductor Substrate - It is to provide a substrate for epitaxial growth, which is capable of improving a surface state of an epitaxial layer at microroughness level. In a substrate for epitaxial growth, when haze is defined as a value calculated by dividing intensity of scattered light obtained when light is incident from a predetermined light source onto a surface of a substrate, by intensity of the incident light from the light source, the haze is not more than 2 ppm all over an effectively used area of the substrate and an off-angle with respect to a plane direction is 0.05 to 0.10°. | 10-09-2008 |
20080230690 | Method for analyzing minute amounts of Pd, Rh and Ru, and high-frequency plasma mass spectroscope used for same - The invention provides a method for analyzing minute amounts of Pd, Rh and Ru with high accuracy by a high-frequency plasma mass spectroscope. The method comprises (1) a step of pretreating a sample by an alkali fusion method using a sodium compound; and (2) a step of analyzing the pretreated sample using a high-frequency plasma mass spectroscope; wherein, in step (2), the distance between a sampling cone and a skimmer cone is adjusted such that the concentration of | 09-25-2008 |
20080223728 | Ultrahigh-Purity Copper and Process for Producing the Same - Ultrahigh purity copper having a residual resistance ratio of 38,000 or greater and a purity of 8N or higher (excluding gas components of O, C, N, H, S and P), and in particular ultrahigh purity copper wherein the respective elements of O, C, N, H, S and P as gas components are 1 ppm or less. Further provided is a manufacturing method of ultrahigh purity copper wherein, upon subjecting copper to high purification with the electrolytic method, an anode and a cathode are partitioned with an anion exchange membrane, an anolyte is intermittently or continuously extracted and introduced into an active carbon treatment vessel, a chlorine-containing material is added to the active carbon treatment vessel so as to precipitate impurities as chloride, active carbon is subsequently poured in and agitated so as to adsorb the precipitated impurities, the adsorbed impurities are removed by filtration, and the obtained high purity copper electrolytic solution is intermittently or continuously introduced into the cathode side and electrolyzed. This technology enables the efficient manufacture of ultrahigh purity copper having a purity of 8N (99.999999 wt %) or higher from a copper raw material containing large amounts of impurities by performing electrolysis with a copper-containing solution, and the provision of ultrahigh purity copper obtained thereby. | 09-18-2008 |
20080210568 | Electrolytic Copper Plating Method, Phosphorous Copper Anode for Electrolytic Copper Plating, and Semiconductor Wafer having Low Particle Adhesion Plated with said Method and Anode - An electrolytic copper plating method characterized in employing a phosphorous copper anode having a crystal grain size of 1,500 μm (or more) to 20,000 μm in an electrolytic copper plating method employing a phosphorous copper anode. Upon performing electrolytic copper plating, an object is to provide an electrolytic copper plating method of a semiconductor wafer for preventing the adhesion of particles, which arise at the anode side in the plating bath, to the plating object such as a semiconductor wafer, a phosphorous copper anode for electrolytic copper plating, and a semiconductor wafer having low particle adhesion plated with such method and anode. | 09-04-2008 |
20080210353 | High-strength copper alloys with excellent bending workability and terminal connectors using the same - The invention aims at providing high-strength copper alloy, especially phosphor bronze, with excellent bending workability. The excellently bendable high-strength copper alloy is obtained through grain size control whereby a finally cold rolled copper alloy with a tensile strength and 0.2% yield strength different by not more than 80 MPa is allowed to have characteristics such that its mean grain size (mGS) after annealing at 425° C. for 10,000 seconds is not more than 5 μm and the standard deviation of the mean grain size (σGS) is not more than ⅓×mGS. Improvements in characteristics presumably attributable to the synergistic effect of grain-boundary strengthening and dislocation strengthening are stably achieved by the adjustments of cold rolling and annealing conditions and by the study of the correlation between pertinent characteristic values after the final rolling. The method of processing the alloy comprises cold rolling to a reduction percentage of at least 45%, final annealing to the extent that the mean grain size (mGS) is not more than 3 μm and the standard deviation of the mean grain size (σGS) is not more than 2 μm, and final cold rolling to a reduction percentage of 10-45%. | 09-04-2008 |
20080199386 | Method for producing ammonium hexachlororuthenate and ruthenium powder, as well as ammonium hexachlororuthenate - Ammonium hexachlororuthenate is produced by adding ammonium chloride to a hydrochloric acid solution containing ruthenium. The ammonium hexachlororuthenate is baked to obtain the ruthenium powder. When the moisture content of the ammonium hexachlororuthenate is high, the baked product is so hard sintered product that its pulverization is not easy. In accordance with the present invention, the following steps are carried out. Hydrochloric acid solution containing ruthenium is held at a temperature of 80 to 95° C. for three hours or longer. The ammonium chloride is then added to the hydrochloric acid solution which is stirred by a stirring mill at the rotation of 200 revolutions per minute or more. The hydrochloric acid solution is held at a temperature of from 85 to 95° C. for 1 hour while being stirred at 200 rpm. The resultant precipitate of ammonium hexachlororuthenate is filtered. The inventive crystals of precipitated ammonium hexachlororuthenate has 10 mass % or less of moisture content. | 08-21-2008 |