| NIPPON MINING AND METALS CO., LTD. Patent applications |
| Patent application number | Title | Published |
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| 20100320084 | Sputtering Target of Nonmagnetic-Particle-Dispersed Ferromagnetic Material - Provided is a sputtering target of nonmagnetic-particle-dispersed ferromagnetic material comprising a phase (A) such that nonmagnetic particles are dispersed in a ferromagnetic material formed from a Co—Cr alloy containing 5 at % or more and 20 at % or less of Cr and Co as the remainder thereof, and schistose textures (B) with a short side of 30 to 100 μm and a long side of 50 to 300 μm formed from a Co—Cr alloy phase in the phase (A); wherein each of the foregoing nonmagnetic particles has such a shape and size that the particle is smaller than all hypothetical circles with a radius of 1 μm around an arbitrary point within the nonmagnetic particle, or a shape and size with at least two contact points or intersection points between the respective hypothetical circles and the interface of the ferromagnetic material and the nonmagnetic material. Consequently, obtained is a high-density sputtering target of nonmagnetic-particle-dispersed ferromagnetic material whose crystal grains are fine, which realizes improvement of PTF (pass through flux) of the target, high-speed deposition with a magnetron DC sputtering system, reduction in the particles (dust) and nodules generated during the sputtering process, minimal variation in quality, and improvement of mass productivity. | 12-23-2010 |
| 20100279069 | Method of Producing Two-Layered Copper-Clad Laminate, and Two-Layered Copper-Clad Laminate - Provided is a method of producing a two-layered copper-clad laminate with improved folding endurance, wherein the two-layered copper-clad laminate retains folding endurance of 150 times or more measured with a folding endurance test based on JIS C6471 by subjecting the laminate in which a copper layer is formed on a polyimide film through sputtering and plate processing to heat treatment at a temperature of 100° C. or more but not exceeding 175° C. Specifically, provided are a method of producing a two-layered copper-clad laminate (two-layered CCL material) in which a copper layer is formed on a polyimide film through sputtering and plate processing, wherein the rupture of the outer lead part of a circuit can be prevented due to the improvement in folding endurance; and a two-layered copper-clad laminate obtained from the foregoing method. | 11-04-2010 |
| 20100276276 | Thin Film Mainly Comprising Titanium Oxide, Sintered Sputtering Target Suitable for Producing Thin Film Mainly Comprising Titanium Oxide, and Method of Producing Thin Film Mainly Comprising Titanium Oxide - Provided is a thin film mainly comprising titanium oxide, wherein the thin film comprises components of Ti, Ag and O and contains 29.6 at % or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof, and O/(2Ti+0.5Ag) as a ratio of oxygen to metals is 0.97 or more. This invention aims to provide a thin film mainly comprising titanium oxide having a high refractive index and a low extinction coefficient, a sintered sputtering target mainly comprising titanium oxide suitable for producing the thin film, and a method of producing a thin film mainly comprising titanium oxide. This invention also aims to provide a thin film that has superior transmittance, minimally deteriorates in reflectance, and is useful as an interference film or a protective film for an optical information recording medium. It is also possible to apply this film to a glass substrate; that is, which can be used as a heat reflective film, an antireflective film, and an interference filter. | 11-04-2010 |
| 20100272596 | High-Purity Lanthanum, Sputtering Target Comprising High-Purity Lanthanum, and Metal Gate Film Mainly Comprising High-Purity Lanthanum - Provided are high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, and amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less; as well as high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less, oxygen content is 1500 wtppm or less, elements of alkali metals and alkali earth metals are respectively 1 wtppm or less, elements of transition metals and high-melting-point metals other than those above are respectively 10 wtppm or less, and radioactive elements are respectively 10 wtppb or less. The invention aims to provide technology capable of efficiently and stably providing high-purity lanthanum, a sputtering target comprising high-purity lanthanum, and a thin film for metal gate mainly comprising high-purity lanthanum. | 10-28-2010 |
| 20100261033 | Copper Foil for Printed Circuit Board and Copper Clad Laminate for Printed Circuit Board - Provided is a copper foil for a printed circuit board comprising a layer including nickel, zinc, a compound of nickel and that of zinc (hereinafter referred to a “nickel zinc layer”) on a roughened surface of a copper foil, and a chromate film layer on the nickel zinc layer, wherein the zinc add-on weight per unit area of the nickel zinc layer is 180 μg/dm | 10-14-2010 |
| 20100260640 | High Purity Ytterbium, Sputtering Target Made Thereof, Thin Film Containing the Same, and Method of Producing the Same - Provided is a method of producing high purity ytterbium, wherein the high purity ytterbium is obtained by reducing crude ytterbium oxide in a vacuum with reducing metals composed of metals having a low vapor pressure, and selectively distilling ytterbium. Additionally provided are methods of achieving the high purification of ytterbium which has a high vapor pressure and is hard to refine in a molten state, and high purity ytterbium obtained thereby. Further provided is technology for efficiently and stably obtaining a sputtering target made of high purity material ytterbium, and a thin film for metal gates containing high purity material ytterbium. | 10-14-2010 |
| 20100242674 | High-Purity Ni-V Alloy, Target therefrom, High-Purity Ni-V Alloy Thin Film and Process for Producing High-Purity Ni-V Alloy - A high purity Ni—V alloy, high purity Ni—V alloy target and high purity Ni—V alloy thin film wherein the purity of the Ni—V alloy excluding Ni, V and gas components is 99.9 wt % or higher, and the V content variation among ingots, targets or thin films is within 0.4%. With these high purity Ni—V alloy, high purity Ni—V alloy target and high purity Ni—V alloy thin film having a purity of 99.9 wt % or higher, the variation among ingots, targets or thin films is small, the etching property is improved, and isotopic elements such as U and Th that emit alpha particles having an adverse effect on microcircuits in a semiconductor device are reduced rigorously. Further provided is a method of manufacturing such high purity Ni—V alloys capable of effectively reducing the foregoing impurities. | 09-30-2010 |
| 20100221563 | Metal Covered Polyimide Composite, Process for Producing the Composite, and Process for Producing Electronic Circuit Board - Provided is a metal covered polyimide composite comprising a tie-coat layer and a metal seed layer formed on a surface of a polyimide film by electroless plating or a drying method, and a copper layer or a copper alloy layer formed thereon by electroplating, wherein the copper plated layer or copper alloy plated layer comprises three layers to one layer of the copper layer or copper alloy layer, and there is a concentrated portion of impurities at the boundary of the copper layer or copper alloy layer when the copper layer or copper alloy layer is three layers to two layers, and there is no concentrated portion of impurities when the copper layer or copper alloy layer is a single layer. The provided metal covered polyimide composite can effectively prevent peeling in a non-adhesive flexible laminate (especially a two-layer flexible laminate), particularly can effectively inhibit peeling from the interface of a copper layer and tin plating. Additionally provided are a method of producing the composite and a method of producing an electronic circuit board. | 09-02-2010 |
| 20100215982 | Metal Covered Polyimide Composite, Process for Producing the Composite, and Apparatus for Producing the Composite - Provided is a metal covered polyimide composite comprising a tie-coat layer and a metal seed layer formed on a surface of a polyimide film by electroless plating or a drying method, and a copper layer or a copper alloy layer formed thereon by electroplating, wherein the copper plated layer or copper alloy plated layer includes three layers to one layer of the copper layer or copper alloy layer. The provided metal covered polyimide composite can effectively prevent peeling in a non-adhesive flexible laminate (especially a two-layer flexible laminate), particularly can effectively inhibit peeling from the interface of a copper layer and tin plating. Additionally provided are a method of producing the composite and an apparatus for producing the composite. | 08-26-2010 |
| 20100212941 | Copper Foil for Printed Circuit and Copper-Clad Laminate - Provided is a copper foil for printed circuit comprising a roughened layer on a surface of a copper foil by way of copper-cobalt-nickel alloy plating, a cobalt-nickel alloy plated layer formed on the roughened layer, and a zinc-nickel alloy plated layer formed on the cobalt-nickel alloy plated layer, wherein the total amount of the zinc-nickel alloy plated layer is 150 to 500 μg/dm | 08-26-2010 |
| 20100206724 | Method of Producing Sintered Compact, Sintered Compact, Sputtering Target Formed from the same, and Sputtering Target-Backing Plate Assembly - Provided is a method of producing a sintered compact including the steps of mixing raw material powders respectively composed of a chalcogenide element and a Vb group element or raw material powders of an alloy of two or more elements including a chalcogenide element and a Vb group element, and hot pressing the mixed powder under conditions that satisfy the following formula: P(pressure)≦{Pf/(Tf−T | 08-19-2010 |
