| NICHIA CORPORATION Patent applications |
| Patent application number | Title | Published |
|---|
| 20120120671 | LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING CIRCUIT BOARD - A light emitting device comprises a light emitting element and a package constituted by a molded article and a first lead and a second lead embedded in the molded article, and having a bottom face, a top face disposed opposite to the bottom face, and a light emission face connected to the bottom face and the top face. The first lead has a first terminal part exposed at the bottom face exposed at the top face. The exposed part is provided more toward the center of the package than the first terminal part. | 05-17-2012 |
| 20120112623 | METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - To make a light emitting device, a light emitting element is placed in a recess of a package, powders having a fluorescent material and coated with inorganic particles are provided, the fluorescent powders, fillers and a resin are mixed, the light emitting element placed in the recess of the package is sealed with the resin, and a centrifugal force is applied to the sealed package so that the fluorescent powders and the fillers sediment are pushed toward a bottom of the recess. | 05-10-2012 |
| 20120091500 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - A light emitting device uses a conductive bonding agent in bonding a package and a cap, and the light emitting device is a non-air tight and can be manufactured stably, with an improved yield. A method of manufacturing the light emitting device includes a step of bonding a cap having a frame portion to a package having a light emitting element mounted in a recess of the package to cover an opening of the recess. In the step of bonding, a metal bonding agent having greater wettability to the frame portion than to the package is partially disposed to the package or the frame portion, and extended along the frame portion so that ends of the metal bonding agent are joined to each other. With this, a space is defined at a joining portion where the ends of the metal bonding agent are joined, and the package and the frame portion are bonded. | 04-19-2012 |
| 20120058585 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LASER ELEMENT - A method for manufacturing a nitride semiconductor laser element has: (a) forming a nitride semiconductor layer on a substrate; (b) forming a ridge on a surface of the nitride semiconductor; (c) forming a first protective film on the nitride semiconductor layer including the ridge; (d) removing the first protective film from at least a top face of the ridge; (e) forming a conductive layer composed of a two or more of multilayer film with different compositions on the first protective film and the nitride semiconductor layer including the ridge, and introducing a gap at locations of at least at the uppermost conductive layer corresponding to the base portion from the ridge shoulders; and (f) removing part of the conductive layer through a gap to form a void defined the first protective film and the conductive layer at least on the ridge base portions. | 03-08-2012 |
| 20120037944 | LIGHT EMITTING DEVICE - A light emitting device, which has: a light emitting element; a package that comprises a concavity for holding the light emitting element, and that has on its side wall where the concavity is integrally formed a light reflector for reflecting light from the light emitting element and a light transmitter for transmitting light from the light emitting element to the outside. | 02-16-2012 |
| 20120033698 | NITRIDE SEMICONDUCTOR LASER ELEMENT AND METHOD FOR MANUFACTURING SAME - A nitride semiconductor laser element has: a nitride semiconductor layer having cavity planes at the ends of a waveguide region, an insulating film formed on an upper face of the nitride semiconductor layer so that the ends on the cavity plane side are isolated from cavity planes, and a first film formed from the cavity plane to the upper face of the nitride semiconductor layer, and covered part of the insulating film surface, the first film has a first region that is in contact with the nitride semiconductor and a second region that is in contact with the insulating film, and is formed from Al | 02-09-2012 |
| 20120032197 | LIGHT EMITTING DEVICE AND IMAGE DISPLAY UNIT - A light emitting device includes a package having a recess, a lead frame buried in the package so that one end of the lead frame is exposed at a bottom of the recess and another end protrudes to an exterior of the package, a light emitting element arranged on the lead frame exposed at the bottom of the recess, and an encapsulant filled in the recess. The package includes, at the side face where the lead frame protrudes, a first side face formed inwardly relative to a side face of the lead frame, and a second side face formed at a lower portion of the first side face and protruded so as to cover a top face of the lead frame. | 02-09-2012 |
| 20120018772 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE - A light emitting device includes a base body forming a recess defined by a bottom surface and a side wall thereof, a conductive member whose upper surface being exposed in the recess and whose lower surface forming an outer surface, a protruding portion disposed in the recess, a light emitting element mounted in the recess and electrically connected to the conductive member, and a sealing member disposed in the recess to cover the light emitting element. The base body has a bottom portion and a side wall portion integrally formed of a resin, an inner surface of the side wall portion is the side wall defining the recess and has a curved portion, and the protruding portion is disposed in close vicinity to the curved surface. With this arrangement, a thin and small-sized light emitting device excellent in light extraction efficiency and reliability can be obtained. | 01-26-2012 |
| 20120018766 | LIGHT EMITTING ELEMENT - A semiconductor light emitting element has a first electrode and a second electrode provided on a semiconductor layer; the first electrode has a first external connector and a first extended portion and second extended portion that extend from the first external connector, the second electrode has a second external connector, and a third extended portion, a fourth extended portion, and a fifth extended portion that extend from the second external connector, the third extended portion extends along the first extended portion and farther outside than the first extended portion, the fourth extended portion extends along the second extended portion and farther outside than the second extended portion, and the fifth extended portion extends an area between the third extended portion and the fourth extended portion to the first external connector side, and the fifth extended portion is either on a line that links a point on the first extended portion at the position closest to the second external connector and a point on the second extended portion at the position closest to the second external connector, or closer to the second external connector side than the line. | 01-26-2012 |
| 20120007112 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate, a light emitting element, an additional light emitting element, a light reflecting resin member, an electrically conductive wire, an additional electrically conductive wire, and a sealing member. The substrate is provided with a conductor wiring. The light emitting element is mounted on the substrate. The electrically conductive wire electrically connects the conductor wiring and the light emitting element with at least a part of the electrically conductive wire being embedded in the light reflecting resin member. The additional electrically conductive wire electrically connects the light emitting element and the additional light emitting element, with the additional electrically conductive wire not being in contact with the light reflecting resin member. The sealing member is disposed in a region surrounded by the light reflecting resin member to cover the light emitting element. | 01-12-2012 |
| 20110316126 | Semiconductor element and method of manufacturing the semiconductor element - A semiconductor element includes a semiconductor layer, an electrode, an adhesion layer, and an insulating layer. The electrode is disposed over the semiconductor layer and has a first upper surface and a second upper surface disposed further away from the semiconductor layer than the first upper surface. The adhesion layer is disposed on the first upper surface of the electrode so that the second upper surface of the electrode is disposed further away from the semiconductor layer than an upper surface of the adhesion layer. The insulating layer covers from the upper surface of the adhesion layer to the semiconductor layer. | 12-29-2011 |
| 20110298084 | METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT - A method for manufacturing a semiconductor element of the present invention, has: a laser irradiation step of focusing a pulsed laser beam inside of a substrate constituting a wafer, thereby forming a plurality of isolated processed portions along an intended dividing line inside of the substrate, and creating a fissure that runs from the processed portions at least to the surface of the substrate and links adjacent processed portions; and a wafer division step of dividing the wafer along the intended dividing line. | 12-08-2011 |
| 20110291154 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device, has a package constituted by the lamination of a first insulating layer having a pair of positive and negative conductive wires formed on its upper face, an inner-layer wire below the first insulating layer, and a second insulating layer below the inner-layer wire; a semiconductor light emitting element that has a pair of positive and negative electrodes on the same face side and that is disposed with these electrodes opposite the conductive wires; and a sealing member that covers the semiconductor light emitting element, wherein part of the conductive wires is formed extending in the outer edge direction of the sealing member from directly beneath the semiconductor light emitting element, on the upper face of the first insulating layer, and is connected to the inner-layer wire via a conductive wire disposed in the thickness direction of the package, and the inner-layer wire is disposed so as to be spaced apart from the outer periphery of the semiconductor light emitting element in a see-through view of the package from the upper face side of the first insulating layer. | 12-01-2011 |
| 20110248623 | LIGHT EMITTING DEVICE - A light emitting device includes a housing member having a recess open upward, a light emitting element arranged in the recess and having a light emitting layer of a semiconductor, and a wavelength converting member arranged in the recess and capable of absorbing a part of light emission from the light emitting element and emitting light of different wavelength. The light emitting device is capable of mixing the light emission from the light emitting element and the light emission from the wavelength converting member to emit light from the opening of the recess. A light scattering surface for scattering light emission from the light emitting element and wavelength converting member is formed on at least part of the side surface of the recess. The light emitting element and the wavelength converting member are spaced apart from the side and bottom surfaces of the recess, and the side surfaces of the light emitting element are exposed without being covered with the wavelength converting member. | 10-13-2011 |
| 20110248304 | LIGHT EMITTING DEVICE - The first wavelength converting member, the light emitting element, and the second wavelength converting member are disposed in this order toward the opening of the recess portion on the bottom surface of the housing member through a light transmissive supporting member, and spaced away from the side surface of the recess portion. The first wavelength converting member is a plate shape member made of a composite of an inorganic binder made of an inorganic material and a fluorescent material. A light scattering surface is formed on at least a portion of the side surface of the recess portion, which is irradiated with the light emitted from the side surfaces of the wavelength converting member in parallel with the principal surface of the first wavelength converting member. | 10-13-2011 |
| 20110235666 | SEMICONDUCTOR LASER ELEMENT AND METHOD OF MANUFACTURING THEREOF - A semiconductor laser element having; a substrate, a semiconductor layer laminated a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer in that order on the substrate, a stripe-like ridge formed on the upper face of the second conductivity type semiconductor layer, a conductive oxide layer formed on the upper face of the ridge, a dielectric layer, with a refractive index that is lower than the refractive index of the semiconductor layer, formed on the side faces of the ridge, and a metal layer formed so as to cover the conductive oxide layer and the dielectric layer, the surface of the conductive oxide layer is exposed from the dielectric layer, and the side faces of the conductive oxide layer are sloped with respect to the upper face of the ridge, and the inclination angle of the side faces of the conductive oxide layer with respect to the normal direction is greater than the inclination angle of the side faces of the ridge with respect to the normal direction. | 09-29-2011 |
| 20110222299 | LIGHT EMITTING DEVICE - A light emitting device, has: a light emitting element; a metal member having an element mounting portion on which the light emitting element is mounted, and a flat portion disposed around the periphery of the element mounting portion; and a translucent sealing member that seals the light emitting element and a part of the metal member, the sealing member has a main body portion that seals the light emitting element and the metal member, a convex portion disposed on the main body portion, and a flange portion disposed around the periphery of the main body portion, the flange portion is disposed outside the range illuminated by light emitted from the light emitting element, and the flat portion of the metal member is bent toward the bottom face side of the light emitting device at least within the flange portion. | 09-15-2011 |
| 20110199003 | LIGHT-EMITTING DIODE DRIVING APPARATUS AND LIGHT-EMITTING DIODE LIGHTING CONTROLLING METHOD - A LED driving apparatus includes a rectifying circuit | 08-18-2011 |
| 20110186340 | METHOD FOR PRODUCING CONDUCTIVE MATERIAL, CONDUCTIVE MATERIAL OBTAINED BY THE METHOD, ELECTRONIC DEVICE CONTAINING THE CONDUCTIVE MATERIAL, AND LIGHT-EMITTING DEVICE - The object of the present invention is to provide a method for producing a conductive material that has a low electric resistivity and that is obtained using an inexpensive and stable conductive material composition. A conductive material having a low electric resistivity can be obtained by a method including the step of heating a conductive material composition that contains at least one of a full-cured or semi-cured thermosetting resin and a thermoplastic resin, as well as silver particles. Such a conductive material is a conductive material that includes fused silver particles, and thermosetting resin fine particles that have an average particle diameter of 0.1 μm to 10 μm both inclusive and are dispersed in the fused silver particles. Further, in such a conductive material is a conductive material that includes fused silver particles, and a thermoplastic resin welded among the fused silver particles. | 08-04-2011 |
| 20110175127 | LIGHT EMITTING DEVICE - A light emitting device has a package having an opening provided with a side surface and a bottom surface, and a lead frame exposed to the bottom surface. The lead frame includes a reflection portion bent on the side surface, and a portion of an inner wall surface of the reflection portion is positioned in an inner portion of the package. A light emitting device has a package having a recessed portion on a front surface, a lead frame exposed to a bottom surface of the recessed portion, a light emitting element disposed on the lead frame, and a sealing resin filled into the recessed portion. The lead frame includes a bent portion bent towards the front surface of the package in the recessed portion, and a projecting portion bent to project from the package towards an outer portion, and disposed on a face opposed to the front surface. | 07-21-2011 |
| 20110156065 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a semiconductor light emitting element wherein generation of an open failure of the light emitting device can be eliminated by ensuring a current pathway when disconnection is generated in a transparent electrode layer. A semiconductor light emitting element ( | 06-30-2011 |
| 20110147778 | LIGHT EMITTING DEVICE - To provide a light emitting device capable of improving both color unevenness and an emission output power. | 06-23-2011 |
| 20110141721 | LIGHTING DEVICE - A lighting apparatus ( | 06-16-2011 |
| 20110115366 | Light source having phosphor including divalent, trivalent and tetravalent elements - A phosphor having an excitation band relative to lights in the wide range of wavelengths from ultraviolet to visible light, and having an emission spectrum in the red range and so on, with a wide half value width, and an LED and a light source using the phosphor and emitting white and other color lights with good color rendering properties are provided. Powdered raw materials of Ca | 05-19-2011 |
| 20110111082 | RESIN MOLDING DEVICE - A resin molding device includes a lead plate and a first resin molding member. The lead plate includes patterns. Each of the patterns includes a base, a plurality of lead pairs; and a lead connection portion. Each of the lead pairs includes a first lead and a second lead. The first resin molding member is integrally formed with the base and the lead pairs. The first resin molding member defines a recessed portion at a mounting side surface on the base where a light emitting device is to be mounted. The recessed portion is formed to open upwardly and to have a side surface. The lead pairs are partially exposed at a bottom surface area of the recessed portion. The first lead or the second lead is capable of mounting a protection device thereon such that the protection device is covered by the first resin molding member. | 05-12-2011 |
| 20110095265 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device is provided with a substrate, an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, an n-side pad electrode, a translucent electrode and a p-side pad electrode, wherein the translucent electrode is formed from an electrically conductive oxide, the n-side pad electrode adjoins the periphery of the translucent electrode and the p-side pad electrode is disposed so as to satisfy the following relationships: | 04-28-2011 |
| 20110075689 | TUNING METHOD OF EXTERNAL CAVITY LASER DIODE, VARIABLE WAVELENGTH LASER MODULE, AND PROGRAM OF EXTERNAL CAVITY LASER DIODE TUNING - A tuning methods of an External Cavity Laser Diode (ECLD), comprises steps of: (1) providing a laser light to a grating so as to tilt the grating to an optical axis of a collimated laser light, (2) adjusting the orientation of the grating relative to the collimated laser light, (3) monitoring singleness of longitudinal mode and optical power of a light emitted from the grating, (4) calculating an orientation of the grating to exhibit intended optical power at which the singleness of longitudinal mode shows at least predetermined value, (5) adjusting the grating orientation or the optical axis of the collimated laser light to the calculated grating orientation. | 03-31-2011 |
| 20110026554 | NITRIDE SEMICONDUCTOR LASER ELEMENT - A nitride semiconductor laser element includes a laminate. The laminate includes on a substrate a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer, and constitutes a cavity resonator. The laminate includes an element region, an exposed region and an island layer. The element region is a region in which the laser element is formed. The exposed region is a region in which at least the first conductivity type nitride semiconductor layer is exposed on both sides of the element region in the cavity direction, and which is provided continuously in a cavity resonating direction of the laser element. The island layer is separated from the element region by the exposed region, and that is disposed in a corner of the nitride semiconductor laser element. | 02-03-2011 |
| 20100314658 | LIGHT EMITTING DEVICE - A light emitting device includes a package equipped on a front face with a window for installing a light emitting element, and outer lead electrodes that protrude from a bottom face of the package. The package has, on the bottom face, two side face convex components provided on the side face sides and a center convex component provided at a center. The outer lead electrodes are housed in a concave components defined by the side face convex components and the center convex component. The side face convex component has groove provided on the side face. | 12-16-2010 |
| 20100308445 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor layer stacked on a substrate, a stripe-shaped ridge formed on a surface of the semiconductor layer, and electrode formed on an upper surface of the ridge and a protective film disposed on each side of the ridge. The electrode includes a flat portion having a flat surface substantially parallel to the upper surface of the ridge and sloped portions on both sides of the flat portion with each of the sloped portions having a sloped surface that is sloped with respect to the upper surface of the ridge. The protective film covers a region from a side surface of the ridge to the sloped surface of the sloped portion of the electrode. | 12-09-2010 |
| 20100301272 | Phosphor and manufacturing method for the same, and light source - To provide a phosphor having an emission characteristic such that a peak wavelength of light emission is in a range from 580 to 680 nm, and having a high emission intensity, and having a flat excitation band with high efficiency for excitation light in a broad wavelength range from ultraviolet to visible light (wavelength range from 250 nm to 550 nm). For example, Ca | 12-02-2010 |
| 20100296024 | Liquid crystal display device and color filter for liquid crystal display device - Disclosed a liquid crystal display device including a backlight device including a white-emitting LED device which emits a white light arising from a color mixture created through a combination of a blue-emitting LED, a red-emitting phosphor and a green-emitting phosphor, and a color filter equipping color pixels exhibiting plural colors including a red pixel and formed on a transparent substrate, wherein the white-emitting LED device is enabled to exhibit an emission spectrum having a first peak wavelength falling within a range of 440-470 nm, a second peak wavelength falling within a range of 510-550 nm and a third peak wavelength falling within a range of 630-670 nm, and a red display chromaticity of the liquid crystal display device is confined within a region bounded by lines connecting four points (0.620, 0.280), (0.620, 0.300), (0.680, 0.315) and (0.680, 0.280) based on an xy chromaticity coordinate system. | 11-25-2010 |
| 20100289404 | Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor - An oxynitride phosphor consisting of a crystal containing at least one or more of Group II elements selected from the group consisting of Be, Mg, Ca, Sr, Ba and Zn, at least one or more of Group IV elements selected from the group consisting of C, Si, Ge, Sn, Ti, Zr and Hf, and a rare earth element being an activator R, thereby providing a phosphor which is excited by an excitation light source at an ultraviolet to visible light region and which has a blue green to yellow luminescence color that is wavelength converted. | 11-18-2010 |
| 20100289403 | Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor - An oxynitride phosphor consisting of a crystal containing at least one or more of Group II elements selected from the group consisting of Be, Mg, Ca, Sr, Ba and Zn, at least one or more of Group IV elements selected from the group consisting of C, Si, Ge, Sn, Ti, Zr and Hf, and a rare earth element being an activator R, thereby providing a phosphor which is excited by an excitation light source at an ultraviolet to visible light region and which has a blue green to yellow luminescence color that is wavelength converted. | 11-18-2010 |
| 20100288973 | Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor - An oxynitride phosphor consisting of a crystal containing at least one or more of Group II elements selected from the group consisting of Be, Mg, Ca, Sr, Ba and Zn, at least one or more of Group IV elements selected from the group consisting of C, Si, Ge, Sn, Ti, Zr and Hf, and a rare earth element being an activator R, thereby providing a phosphor which is excited by an excitation light source at an ultraviolet to visible light region and which has a blue green to yellow luminescence color that is wavelength converted. | 11-18-2010 |
| 20100278207 | SEMICONDUCTOR LASER ELEMENT - A semiconductor laser element includes a laminate composed of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a second embedded layer that is in contact with the second conductivity type semiconductor layer, has a stripe-like groove parallel to the cavity direction, and is composed of an insulator, the groove is embedded with a first embedded layer composed of a dielectric on the cavity end face side, and with a conductive layer on the inside. | 11-04-2010 |
| 20100277054 | Light Emitting Device - A light emitting device having a wavelength converting member for absorbing light from a pumping light source and converting its wavelength. Assuming a wavelength where the light from the pumping light source has a maximum energy intensity is a first wavelength, a wavelength where the light from the wavelength converting member has a maximum energy intensity is a second wavelength, a wavelength between the first and second wavelengths where emission spectrum of the light emitting device has a minimum energy intensity is a third wavelength, and a wavelength of 650 nm is a fourth wavelength, the ratio of energy intensity between the first and third wavelengths is 100:15-150, and the ratio of energy intensity between the first and fourth wavelengths is 100:45-200. | 11-04-2010 |
| 20100276802 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - Provided is a semiconductor device and a method of manufacturing the semiconductor device, in which the semiconductor device has a semiconductor element having a plurality of wires bonded to the semiconductor element with sufficient bonding reliability and has a good heat dissipation property. A semiconductor device in which a first wire is ball bonded on an electrode, and a second wire is further bonded on the ball-bonded first wire, and the first wire or an end of the second wire defines a space between itself and the ball portion of the first wire. | 11-04-2010 |
| 20100271816 | Lighting Device, Lighting Unit, and Support - This aims to provide a support ( | 10-28-2010 |
| 20100267181 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 10-21-2010 |
| 20100266815 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 10-21-2010 |
| 20100264842 | DEVICE FOR EMITTING VARIOUS COLORS - A device for emitting various colors by mixing light from a first light emitting diode and light from a second light emitting diode comprises, according to one embodiment: the first light emitting diode including an LED chip comprising InGaN and being capable of emitting a blue color light, and a phosphor capable of absorbing a part of the blue color light and emitting a yellow color light, the blue color light and the yellow color light being mixed to make white-color light; the second light emitting diode being capable of emitting red, green or blue color light; and a drive circuit for separately driving each of the first and second light emitting diode. | 10-21-2010 |
| 20100264841 | DEVICE FOR EMITTING WHITE-COLOR LIGHT - A device for emitting white-color light comprises: a light emitting diode including: an LED chip comprising a gallium nitride compound semiconductor containing indium and being capable of emitting a blue color light, and a phosphor capable of absorbing a part of the blue color light and emitting a light having longer wavelength than the blue color light, the blue color light and the light from the phosphor being mixed to make the white-color; a control unit for converting an input to pulse signals; and a driver receiving the pulse signals from the control unit to drive the LED chip, wherein the brightness of the white-color light from the light emitting diode is controlled by a width of the pulse signals. | 10-21-2010 |
| 20100264449 | LIGHT EMITTING APPARATUS - A light emitting apparatus includes a light emitting device mounted on a base. First and second leads are electrically connected to the light emitting device. A first resin molding member formed of thermosetting resin covers at least partially the base and the first and second leads so that the first resin molding member is formed integrally with the base and the first and second leads. A second resin molding member formed of thermosetting resin is in contact with at least a part of the first resin molding member and covers the light emitting device. A recessed portion is formed in the first resin molding member on a light emitting device mount surface side of the base to open upward and to have a side surface. A protection device is mounted on the first lead or the second lead. The protection device is covered by the first resin molding member. | 10-21-2010 |
| 20100264447 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 10-21-2010 |
| 20100264446 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 10-21-2010 |
| 20100264445 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 10-21-2010 |
| 20100264443 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device having high reliability and excellent light distribution characteristics is provided. Specifically, a semiconductor light emitting device | 10-21-2010 |
| 20100258766 | Phosphor and manufacturing method for the same, and light source - To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2/3m+a+4/3b−2/3o), and further containing boron and/or fluorine. | 10-14-2010 |
| 20100254153 | LIGHT EMITTING DEVICE - A light emitting device includes an excitation light source that emits excitation light, a wavelength conversion member, a light guide, and a light guide distal end member. The wavelength conversion member absorbs the excitation light emitted from the excitation light source, converts its wavelength, and releases light of a predetermined wavelength band. The light guide in which the center part (core) of its cross section has a refractive index that is higher than the refractive index of the peripheral portion (cladding) guides the excitation light emitted from the excitation light source to the wavelength conversion member. The light guide distal end member supports a distal end of the light guide on the wavelength conversion member side. The light guide distal end member is formed from a material that reflects the excitation light and/or the light that has undergone wavelength conversion. | 10-07-2010 |
| 20100252811 | Nitride semiconductor device - In the nitride semiconductor device of the present invention, an active layer | 10-07-2010 |
| 20100248406 | NITRIDE SEMICONDUCTOR LASER ELEMENT - A method is for manufacturing a nitride semiconductor laser element including a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, an insulating protective film, and an electrode that is electrically connected with the nitride semiconductor layer. The method includes forming the ridge; forming a monocrystalline first film from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge; and forming a second film containing polycrystalline or an amorphous substance over the first film thereby forming the insulating protective film. | 09-30-2010 |
| 20100238660 | LIGHTING UNIT - A lighting unit comprises a slender substrate; a plurality of semiconductor light sources arranged in a row in the lengthwise direction on the substrate; and a light reflector disposed along one long side of the substrate, the light reflector has a multi-reflector in which a plurality of small pieces are combined. | 09-23-2010 |
| 20100225226 | LIGHT EMITTING DEVICE - A light emitting device that has excellent color rendering performance is provided. | 09-09-2010 |
| 20100224895 | LIGHT EMITTING DEVICE - A light emitting device that has excellent color rendering performance is provided. | 09-09-2010 |
| 20100220760 | NITRIDE SEMICONDUCTOR LASER DEVICE - The nitride semiconductor laser device includes a substrate, a nitride semiconductor layer having a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer stacked in this order on the substrate, and a ridge provided on a surface of the nitride semiconductor layer. The surface of the nitride semiconductor layer includes a generally flat part and first and second grooves which extend along the ridge in a resonator direction, the first groove being formed continuous to a first side surface of the ridge, the second groove being formed continuous to a second side surface of the ridge which is opposite to the first side surface | 09-02-2010 |
| 20100219746 | PHOSPHOR AND LIGHT EMITTING DEVICE - A light emitting device includes a light emitting element | 09-02-2010 |
| 20100213499 | LIGHT EMITTING DEVICE - To provide a light emitting device that is compact and has high efficiency of extracting light comprising a support body that incorporates a light emitting element. | 08-26-2010 |
| 20100201254 | LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE USING THE LIGHT EMITTING ELEMENT - The light emitting element includes a first electrode and a second electrode opposite each other and electrically connected respectively to a first conductive-type layer and a second conductive type layer constituting a semiconductor structure. The first electrode has a pair of electrode extending portions disposed opposite each other on an electrode forming surface over the first conductive-type layer which is positioned at the light extracting side. In the opposing direction of the pair of electrode extending portions, a half distance I | 08-12-2010 |
| 20100193822 | LIGHT EMITTING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - The light emitting device has a substrate, metallization including silver established on the surface of the substrate, a light emitting element mounted on the substrate, conducting wire that electrically connects the metallization and the light emitting element, light reflective resin provided on the substrate to reflect light from the light emitting element, and insulating material that covers at least part of the metallization surfaces. The insulating material is established to come in contact with the side of the light emitting element. This arrangement can suppress the leakage of light emitting element light from the substrate, and can achieve a light emitting device with high light extraction efficiency. | 08-05-2010 |
| 20100187542 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor light emitting element from a wafer in which a gallium nitride compound semiconductor has been laminated on a sapphire substrate having an orientation flat, comprises of: laminating a semiconductor layer on a first main face of the sapphire substrate having an off angle θ in a direction Xo parallel to the orientation flat; forming a first break groove that extends in a direction Y substantially perpendicular to the direction Xo, on the semiconductor layer side; forming a second break line that is shifted by a predetermined distance in the ±Xo direction from a predicted split line within the first break groove and parallel to the first break groove in the interior of the sapphire substrate and corresponding to the inclination of the off angle θ; and splitting the wafer along the first and/or second break line. | 07-29-2010 |
| 20100158066 | NITRIDE SEMICONDUCTOR LASER ELEMENT - A nitride semiconductor laser element includes a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order, a cavity end face formed by the nitride semiconductor layers, and a protective film formed on the cavity end face. The nitride semiconductor layers of the first and second conduction types have layers containing Al, and the active layer has layer containing In. The protective film has a region in which an axial orientation of crystals is the same as that of the cavity end face on the nitride semiconductor layers of the first and second conduction types, and has another region in which an axial orientation of crystals is different from that of the cavity end face on the active layer. | 06-24-2010 |
| 20100155771 | LIGHT EMITTING DEVICE - A light emitting device includes a first lead and a second lead. The first lead has a top surface which a light emitting element is mounted thereon and a bottom surface opposed to the top surface. The second lead has a lead peripheral region where a wire connected to an electrode of the light emitting element is bonded therewith. The first lead includes a lead middle region where the semiconductor light emitting element is mounted thereon to thermally conduct therewith. A bottom surface of the lead middle region is exposed from a package. The second lead has an outer lead region that is projected outwardly from the both side surfaces of the package. The bottom surface of the first lead middle region is substantially coplanar with a bottom surface of the outer lead region. | 06-24-2010 |
| 20100109042 | LIGHT EMITTING DEVICE - To provide a low-profile light emitting device which can be manufactured with good productivity without worsening mold releasability and which can prevent bending an end terminal of a lead electrode during handling of the light emitting device. A light emitting device comprising: a light emitting element; and a package having lead electrodes to be connected to the light emitting element and an opening in front thereof for emitting a light emitted from the light emitting element in which parts of the lead electrodes project out of the package and are bent so that end portions thereof are located on side surfaces of the package, wherein side surfaces have a first face adjacent to a rear surface of the package, on which the end portions are located, a second face having a plane direction different from the first face, and a third face adjacent to a front surface of the package, having a plane direction different from the second face. | 05-06-2010 |
| 20100098127 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - A method of manufacturing a nitride semiconductor light emitting element includes: forming a stacked layer body of a nitride semiconductor having a second conductive-type layer, a light emitting layer, and a first conductive-type layer stacked on a growth substrate in this order; forming a first Bragg reflector made of a dielectric multilayer film above the first conductive-type layer; forming a first electrode over the first Bragg reflector with the first electrode being electrically connected to the first conductive-type layer; bonding the stacked layer body to a supporting substrate via the first Bragg reflector and the first electrode; removing the growth substrate from the stacked layer body to expose the second conductive-type layer; and forming over the exposed second conductive-type layer a second electrode and a second Bragg reflector made of a dielectric multilayer film so that the second Bragg reflector faces the first Bragg reflector across the stacked layer body. | 04-22-2010 |
| 20100096650 | NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - Provided is a nitride semiconductor light emitting element capable of producing an emission spectrum having two peaks with stable ratio of emission peak intensity. The nitride semiconductor light emitting | 04-22-2010 |
| 20100072501 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device which includes at least one concave on a light extraction surface opposite to a surface on which a semiconductor stack comprising a light emitting layer between a n-type semiconductor layer and a p-type semiconductor layer is mounted. The concave has not less than two slopes each having a different slope angle in a direction that a diameter of the concave becomes narrower toward a bottom of the concave from an opening of the concave and a slope having a gentle slope angle is provided with irregularities and a slope having a steep slope angle is a flat surface. | 03-25-2010 |
| 20100059782 | OPTICAL-SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTRUING THE SAME - A method for manufacturing an optical-semiconductor device, including forming a plurality of first and second electrically conductive members that are disposed separately from each other on a support substrate; providing a base member formed from a light blocking resin between the first and second electrically conductive members; mounting an optical-semiconductor element on the first and/or second electrically conductive member; covering the optical-semiconductor element by a sealing member formed from a translucent resin; and obtaining individual optical-semiconductor devices after removing the support substrate. | 03-11-2010 |
| 20090315012 | LIGHT EMITTING DEVICE STRUCTURE HAVING NITRIDE BULK SINGLE CRYSTAL LAYER - The object of this invention is to provide a high-output type nitride light emitting device. | 12-24-2009 |
| 20090309485 | Nitride phosphor and production process thereof, and light emitting device - To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula L | 12-17-2009 |
| 20090289268 | LIGHT EMITTING APPARATUS AND SEMICONDUCTOR APPARATUS, AND METHOD FOR MANUFACTURING THE SAME - A semiconductor apparatus and a light emitting apparatus which are capable of efficiently dissipating the heat generated by a semiconductor device and have high reliability, and a method for manufacturing the same are provided. | 11-26-2009 |
| 20090284132 | Nitride phosphor and production process thereof, and light emitting device - To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula L | 11-19-2009 |
| 20090275159 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LASER ELEMENT - A method for manufacturing a nitride semiconductor laser element having a nitride semiconductor layer including at least an active layer provided on a substrate, a pair of cavity planes formed on the nitride semiconductor layer, and a protruding part where part of the substrate protrudes from said cavity plane, said method comprises: a step of forming the nitride semiconductor layer on the substrate; a first etching step of forming a first groove by etching at least the nitride semiconductor layer; and a second etching step of forming the cavity plane, in the second etching step, the inner wall of the first groove and part of the nitride semiconductor layer surface adjacent to the first groove are etched to form a second groove, and form the upper face of the protruding part. | 11-05-2009 |
| 20090261374 | HIGH OUTPUT POWER LIGHT EMITTING DEVICE AND PACKAGED USED THEREFOR - An object of the present invention is to provide a light emitting device that has high output power and long service life where a package is suppressed from discoloring due to heat generation. The light emitting device | 10-22-2009 |
| 20090246945 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE - A method for manufacturing a nitride semiconductor substrate includes the steps of growing a first nitride semiconductor on a substrate, patterning the first nitride semiconductor to obtain a pattern surrounded by a plane equivalent to the (11-20) plane and having at least two concave portions that are similar in their planar shape, and growing a second nitride semiconductor layer, using a plane equivalent to the (11-20) plane in the first nitride semiconductor pattern as a growth nucleus. | 10-01-2009 |
| 20090239388 | Semiconductor device and method for manufacturing the same - The present invention provides a semiconductor device having a coating film of a predetermined thickness provided along the circumference of a semiconductor light emitting element, and provide a method for easily manufacturing the semiconductor device. | 09-24-2009 |
| 20090230840 | Nitride phosphor and production process thereof, and light emitting device - To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula L | 09-17-2009 |
| 20090201667 | BACKLIGHT UNIT - To provide a backlight having a positioning member that can prevent from coming off from metal frame and damaging a display panel even when used in a harsh environment such as undergoing sharp temperature changes. | 08-13-2009 |
| 20090168126 | Light Emitting Unit, Lighting Apparatus and Image Reading Apparatus - There are provided a light emitting unit in which temperature increase due to heat generated in a light emitting element is suppressed to enhance light emission efficiency, a linear illumination device in which the light emitting unit is incorporated, and a contact-type image sensor and an image scanner in which the linear illumination device is incorporated. A lead frame | 07-02-2009 |
| 20090166657 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate provided with a conductor wiring, a light emitting element mounted on the substrate and a light reflecting resin member configured and arranged to reflect light emitted from the light emitting element. The light emitting device also includes at least one of an electrically conductive wire electrically connecting the conductor wiring and the light emitting element, an exposed region of the substrate on which the conductor wiring is not disposed, and a protective element mounted on the conductor wiring. At least a part of the electrically conductive wire, the exposed region or the protective element is buried in the light reflecting resin member. | 07-02-2009 |
| 20090146921 | DISPLAY DEVICES - A display device in which pixels constituted by light emitting elements arranged on a substrate are arranged in a matrix, the substrate comprises: a canopy disposed at the upper or lower end of the pixels; and at least two kinds of anti-reflective components that are formed at a peripheral edge of the light emitting element and with different reflection angles with respect to incident light. | 06-11-2009 |
| 20090137098 | Method of manufacturing semiconductor element - A step of forming a first auxiliary groove in a semiconductor element structure provided on a semiconductor substrate, a step of forming a second auxiliary groove in the semiconductor element structure, and a step of dividing the semiconductor substrate and the semiconductor element structure in a direction along the first auxiliary groove and the second auxiliary groove are provided, and in the dividing direction, a plurality of the second auxiliary grooves are arranged spaced apart from each other, and at least two first auxiliary grooves are arranged spaced apart from each other between at least a pair of adjacent second auxiliary grooves, and in the dividing step, a separation region interposed between the two first auxiliary grooves is divided, so as to improve such accuracy and suppress the problems such as a damage of the end surface due to cleavage of the substrate. | 05-28-2009 |
| 20090134411 | Light Emitting Device and Backlight Unit Using the Same - An object of the present invention is to provide a light emitting device that shows high adhesion between a sealing member and a package member. A light emitting device | 05-28-2009 |
| 20090129418 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A method for manufacturing a semiconductor laser device includes forming a laminate having a semiconductor layer of a first conductivity type, an active layer and a semiconductor layer of a second conductivity type. The waveguide region is formed to guide light perpendicular to the direction of width by restricting the light from spreading in the direction of width in the active layer, such that the semiconductor laser device has a first waveguide region and a second waveguide region. The first waveguide region is formed to confine light within the limited active layer by means of a difference in the refractive index between the active layer and the regions on both sides of the active layer by limiting the width of the active layer. In forming the second waveguide region, light is confined therein by providing effective difference in refractive index in the active layer. | 05-21-2009 |
| 20090114936 | LIGHT EMITTING DEVICE - To provide a light emitting device that makes it possible to form a surface light emitting apparatus of less unevenness in luminance. | 05-07-2009 |
| 20090109652 | Phosphor and manufacturing method for the same, and light source - To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2/3m+a+4/3b−2/3o), and further containing boron and/or fluorine. | 04-30-2009 |
| 20090096370 | FLUORESCENT MATERIAL AND LIGHT-EMITTING DEVICE - A lamp includes a light-emitting body that converts electric energy into light energy and a translucent glass covering the light-emitting body, wherein a phosphor layer is provided on at least inner or outer surface of the translucent glass. The phosphor layer includes a fluorescent material including a first phosphor that at least partially converts energy emitted by an excitation source, which emits ultraviolet having a wavelength of about 365 nm, to a first emission spectrum that is different from the energy, and a second phosphor that at least partially converts the first emission spectrum to a second emission spectrum. Peak wavelengths of the emission spectrum of the first and second phosphors have a relation of complementary colors so that when the light created due to the peak wavelengths of the first and second phosphors are mixed, the resulting light is in the white region. | 04-16-2009 |
| 20090095960 | HEAT DISSIPATION MEMBER, SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR LIGHT EMITTING APPARATUS - A heat dissipation member includes a first plate-shaped member and a second plate-shaped member. The first plate-shaped member has a first surface thermally connectable with a heat generating element and a second surface. The second plate-shaped member is thermally connected with the second surface of the first plate-shaped member. The first plate-shaped member and the second plate-shaped member form a laminated-plate-shaped member. The laminated-plate-shaped member defines an inlet for admission of a fluid and an outlet communicating with the inlet for ejection of the fluid. The second surface of the first plate-shaped member forms asperities thereon. | 04-16-2009 |
| 20090085458 | FLUORESCENT MATERIAL AND LIGHT-EMITTING DEVICE - A fluorescent material includes first and second phosphors. The first phosphor is a light-storing phosphor, which is represented by the general formula (M | 04-02-2009 |
| 20090085010 | Phosphor and manufacturing method for the same, and light source - To provide a phosphor having an emission characteristic such that a peak wavelength of light emission is in a range from 580 to 680 nm, and having a high emission intensity, and having a flat excitation band with high efficiency for excitation light in a broad wavelength range from ultraviolet to visible light (wavelength range from 250 nm to 550 nm). For example, Ca | 04-02-2009 |
| 20090072708 | Nitride phosphor and production process thereof, and light emitting device - To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula L | 03-19-2009 |
| 20090072700 | PHOSPHOR-CONTAINING MOLDED MEMBER, METHOD OF MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE HAVING THE SAME - In a method of manufacturing a phosphor-containing molded member, an inorganic powder in a mixture with a phosphor powder is melted by using Spark Plasma Sintering method, and then cooled. In a phosphor-containing molded member, a content of the phosphor therein is 5% by weight or more. | 03-19-2009 |
| 20090050925 | RESIN MOLDING, SURFACE MOUNTED LIGHT EMITTING APPARATUS AND METHODS FOR MANUFACTURING THE SAME - The present invention provides a surface mounted light emitting apparatus which has long service life and favorable property for mass production, and a molding used in the surface mounted light emitting apparatus. | 02-26-2009 |
| 20090042328 | SEMICONDUCTOR LIGHT EMITTING DEVICE - At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers. | 02-12-2009 |
| 20090034296 | Light Emitting Unit, Illumination Device Using Such Light Emitting Unit, and Image Scanner - A light emitting unit comprises a light emitting element, a light emitting element substrate for mounting the light emitting element, a light emitting element substrate frame member provided with a window for exposing the light emitting element, and an electrode for supplying electricity to the light emitting element, wherein the light emitting element substrate is a metal and the light emitting element is mounted directly on the light emitting element substrate. The light emitting unit is also characterized in that the light emitting element substrate is a metal, a metal oxide film is provided on the light emitting element substrate, and the light emitting element is mounted on the electrode formed on the metal oxide film. | 02-05-2009 |
| 20090026480 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a light emitting device with high extraction efficiency, in which absorption of light by a conductive wire is prevented effectively. The light emitting device includes a conductive wire electrically connecting an electrode of a light emitting element and an electrically conductive member. The surface of the bonding portion of the conductive wire between the conductive wire and at least one of the electrode of the light emitting element and the electrically conductive member is covered with a metal film. The reflectivity of the metal film is higher than that of the conductive wire at the emission peak wavelength of the light emitting element. | 01-29-2009 |
| 20090022191 | METHOD FOR MANUFACTURING A NITRIDE SEMICONDUCTOR LASER ELEMENT AND A NITRIDE SEMICONDUCTOR LASER ELEMENT - A method for manufacturing a nitride semiconductor laser element, which has over a substrate a laminate including an element region constituting a cavity, an island layer separated from the element region, an exposed region separating the element region from the island layer, and an auxiliary groove provided along an end face of the cavity, and with which the cavity end face is obtained by dividing the laminate and the substrate along the first auxiliary groove, the method comprises a step of: forming the laminate over the substrate; removing part of the laminate to separate the laminate into the element region and the island layer and to form the exposed region provided continuously in the cavity direction of the nitride semiconductor laser element; forming the first auxiliary groove so as to be adjacent to the island layer; and dividing so that the island layer is disposed in a corner of the nitride semiconductor laser element to obtain a nitride semiconductor laser element. | 01-22-2009 |
| 20090020778 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The light emitting device | 01-22-2009 |
| 20090020769 | Semiconductor light emitting element - A semiconductor light emitting element having a rectangular shape in plan view comprising at least a first side and a second side adjacent to the first side, the semiconductor light emitting element including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a plurality of first electrodes having a long shape along the first side and being arranged on the first conductivity-type semiconductor layer in a lattice form of x columns (x≧2) along the first side and y rows (y>x) along the second side, and a second electrode arranged on the second conductivity-type semiconductor layer. The first electrode and the second electrode are arranged on the same surface side. The first electrode is surrounded by the first conductivity-type semiconductor layer, the second conductivity-type semiconductor layer, and the second electrode is provided. | 01-22-2009 |
| 20090016201 | Optical Device - To provide an optical disc device | 01-15-2009 |
| 20090010294 | NITRIDE SEMICONDUCTOR LASER ELEMENT - A nitride semiconductor laser element, comprises; nitride semiconductor layers in which a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order; a cavity end face formed by the nitride semiconductor layers; and a protective film formed on the cavity end face, the protective film has a region in which an axial orientation of crystals is different in the direction of lamination of the nitride semiconductor layers. | 01-08-2009 |
| 20090010017 | LIGHT EMITTING DEVICE - A light emitting device comprises; a metal reflecting member, a light emitting element fixed to the metal reflecting member, a glass film that covers the metal reflecting member and has Si—N bonds, and a translucent resin that covers the glass film. The present invention provides a light emitting device with which, even when this device is used in a harsh environment, there will be no deterioration in the light reflecting performance of the metal reflecting member, and light can be emitted at high output over an extended period. | 01-08-2009 |
| 20090008668 | Semiconductor Light Emitting Device and Method for Fabricating the Same - A semiconductor light emitting device, which includes: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; a semiconductor light emitting portion having a light emitting layer which is disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer; and a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer, wherein the second conductivity-type semiconductor side electrode is disposed separated from an insulator film covering the semiconductor light emitting portion by a separation area. | 01-08-2009 |
| 20090003400 | Light-emitting device - In a semiconductor light-emitting device, light from a laser diode is output to the outside after the luminance of the light being enhanced. It includes a support body provided with lead terminals, one or more laser diodes mounted on the support body, a cylindrical reflector fixed to the support body to surround the laser diode(s) and provided with a light reflection surface formed on an inner surface thereof, and a cap placed to cover an opening distal end face of the reflector and held at an opening distal end part of the reflector, the cap being provided at a central part thereof with a solid fluorescent member including a fluorescent substance that is excited by the light from the laser diode and emits light different in colors from light emitted by the laser diode. | 01-01-2009 |
| 20080304530 | NITRIDE SEMICONDUCTOR LASER ELEMENT - A nitride semiconductor laser element comprises; a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and a first protective film that is in contact with at least one end face of the cavity, wherein the first protective film has a film structure in which bright and dark parts comprising a region in contact with the active layer and a region in contact with the first and second nitride semiconductor layers are observed under scanning transmission electron microscopy, or the first protective film has a film structure in which the crystallinity at a portion adjacent to the active layer is different from that at portions adjacent to the first and second nitride semiconductor layers. | 12-11-2008 |
| 20080303412 | Light source having phosphor including divalent, trivalent and tetravalent elements - A phosphor having an excitation band relative to lights in the wide range of wavelengths from ultraviolet to visible light, and having an emission spectrum in the red range and so on, with a wide half value width, and an LED and a light source using the phosphor and emitting white and other color lights with good color rendering properties are provided. Powdered raw materials of Ca | 12-11-2008 |
| 20080303043 | SEMICONDUCTOR LIGHT EMITTING DEVICE - At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers. | 12-11-2008 |
| 20080303042 | Method for manufacturing substrate for semiconductor light emitting element and semiconductor light emitting element using the same - A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting element | 12-11-2008 |
| 20080298063 | LIGHT EMITTING APPARATUS, RESIN MOLDING DEVICE COMPOSING LIGHT EMITTING DEVICE, METHOD FOR PRODUCING THE SAME - A light emitting apparatus includes a plurality of light emitting devices. A first lead and a second lead compose a lead pair. The first and second leads are electrically connected to the light emitting devices. A plurality of the light emitting devices is mounted on the base. The lead pairs are arranged generally symmetrically with respect to the base as the center line of the light emitting apparatus. The first and second leads are electrically insulated from each other. A first resin molding member covers at least parts of the base and the lead pairs. Thus, the first resin molding member, the base, and the lead pairs are integrally formed. A recessed portion is formed in the first resin molding member. The recessed portion is filled with a second resin molding member. The first and second resin molding members are formed of a thermosetting resin material. | 12-04-2008 |
| 20080296609 | Nitride Semiconductor Device Comprising Bonded Substrate and Fabrication Method of the Same - A substrate | 12-04-2008 |
| 20080259598 | LIGHT EMITTING DEVICE - The device includes a blue light emitting region having a first light emitting part and a yellow light emitting region having a second light emitting part and a wavelength converting member arranged to absorb light from the second light emitting part and to convert the wavelength thereof to emit yellow light. The second light emitting part has a higher output than that of the first light emitting part. With this arrangement, output of the yellow light can be increased, so that the device can be used in an image reading apparatus with a high sensitivity. | 10-23-2008 |
| 20080258158 | LIGHT EMISSION DEVICE - A light emission device includes a plurality of semiconductor light emitting elements and a supporting substrate on which the plurality of semiconductor light emitting elements are flip-chip mounted. Each of the plurality of semiconductor light emitting elements has a substantially rectangular shape which has a first side and a second side different from the first side. Light emitted from a first element end face on the first side is stronger than light emitted from a second element end face on the second side. Each first side of each of the plurality of semiconductor light emitting elements faces each other substantially in parallel. | 10-23-2008 |
| 20080239199 | BACKLIGHT UNIT - A backlight unit includes a light source, a light guide guiding light from the light source, an optical sheet disposed on the light guide, and an inner frame having an opening housing the optical sheet. A peripheral portion of the optical sheet includes a projection group respectively at each of the longitudinal sides that are among the constituent sides of an approximately rectangular external contour of the optical sheet. The projection group includes a first projection arranged in a projection insertion region provided in a side wall of the inner frame and a second projection arranged outside of the projection insertion region in the opening of the inner frame. | 10-02-2008 |
| 20080233678 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device having a substrate on which conductor wiring is disposed, electrodes provided to the conductor wiring, a semiconductor element connected to the electrodes, and a sealing member that covers the semiconductor element, comprises; mounting a plurality of semiconductor elements on the substrate in the X-axial direction and the Y-axial direction, forming marks in the X-axial direction, supplying the sealing material onto the substrate to continuously-covering the plurality of semiconductor elements arranged in the X-axial direction along the marks, dicing the sealing member and the substrate in the Y-axial direction to form cut planes of the sealing member and the substrate in substantially one plane and being a pair of cut planes opposite one another. | 09-25-2008 |
| 20080205477 | LIGHT EMITTING DEVICE - A light emitting device includes a first unit having a first excitation light source including a laser element emitting blue wavelength band excitation light, and a first wavelength converting member including at least one type of fluorescent material and which absorbs at least a portion of a first excitation light, converts the wavelength, and releases light with a wavelength longer than the first excitation light, and a second unit having a second excitation light source including a laser element which emits excitation light with a wavelength band shorter than the blue wavelength band excitation light, and a second wavelength converting member which includes at least one type of fluorescent material and which absorbs at least a portion of a second excitation light, converts the wavelength, and releases light with a wavelength longer than the second excitation light. The first unit and the second unit are combined using a bundle fiber. | 08-28-2008 |
| 20080205464 | NITRIDE SEMICONDUCTOR LASER ELEMENT - A nitride semiconductor laser element has a first nitride semiconductor layer, an active layer, a second nitride semiconductor layer, and a first protective film in contact with a cavity end face of the nitride semiconductor layer, wherein the first protective film in contact with at least the active layer of the cavity end face has a region thinner than the maximum thickness of the first protective film. | 08-28-2008 |
| 20080205059 | Lighting apparatus cable and lighting apparatus using the same - The present invention provides the lighting apparatus cable that allows it to easily attach the lighting module and enables it to improve the productivity. A flat cable used in a lighting apparatus having a plurality of lighting modules disposed in series, for connecting the lighting modules in such a manner that colors and/or luminous intensities of emitted lights of the lighting modules can be controlled, the flat cable comprising: at least four conductors disposed in parallel which include two signal conductors disposed at both sides of the cable and two power feeding conductors; a sheath member covering the at least four conductors to integrate; and notches formed on both sides of the cable so as to cut the signal conductors. | 08-28-2008 |
| 20080203418 | Semiconductor Device - A semiconductor device comprises an active layer having a quantum well structure, the active layer including a well layer and a barrier layer and being sandwiched by a first conductivity type layer and a second conductivity type layer, wherein a first barrier layer is provided on side of the first conductivity type layer in the active layer and a second barrier layer is provided on the side of the second conductivity type layer in the active layer, at least one well layer is sandwiched thereby, and the second barrier layer has a band gap energy lower than that of the first barrier layer in the form of asymmetric barrier layer structure, where the second conductivity type layer preferably includes a carrier confinement layer having a band gap energy higher than that of the first barrier layer, resulting in a reverse structure in each of conductivity type layer in respect to the asymmetric structure of the active layer to provide a waveguide structure having excellent crystallinity and device characteristics in the nitride semiconductor light emitting device operating at a wavelength of 380 nm or shorter. | 08-28-2008 |
| 20080198886 | NITRIDE SEMICONDUCTOR LASER ELEMENT - The present invention provides a nitride semiconductor laser element, comprising: a nitride semiconductor structure having a first nitride semiconductor layer, a second nitride semiconductor layer, and an active layer provided between the first and second nitride semiconductor layers; a cavity end face provided to the nitride semiconductor structure; and a protective film having a hexagonal crystal structure, and having a first region provided on a first crystal surface of the nitride semiconductor structure in the cavity end face and a second region provided on a second crystal surface in the surface of at least one of the first and second nitride semiconductor layer, the first and second regions of the protective film are oriented in the same axial direction as that of the respective first and second crystal surfaces. | 08-21-2008 |
