| NEXPOWER TECHNOLOGY CORP. Patent applications |
| Patent application number | Title | Published |
|---|
| 20110180136 | THIN FILM SOLAR CELL STRUCTURE AND METHOD OF PATTERNING ELECTRODE OF THE SAME - A thin film solar cell structure comprises a substrate, a front electrode layer, an absorber layer, and a back electrode layer stacked on one another sequentially. A first isolation groove goes through the back electrode layer and the absorber layer, and a second isolation groove is disposed concavely in the front electrode layer and filled with an insulative material. A conductive groove is disposed concavely in the absorber layer and filled with a conductive material. Therefore, the front electrode layer is electrically conducted to the back electrode layer via the conductive material. By means of a method of patterning the first isolation groove, second isolation groove and conductive groove, a succinct design of the thin film solar cell structure can be achieved. | 07-28-2011 |
| 20110005585 | Laser-Scribing Method to Make a Bifacial Thin Film Solar Cell and the Structure Thereof - The present invention discloses a laser-scribing method to make a bifacial thin film solar cell and the structure thereof. The laser-scribing method is to form scribing patterns that penetrate different structural layers during the process of forming various structural layers. After the laser-scribing, the top solar cell unit is attached with the bottom solar cell unit by various combining steps to form a solar cell assembly. The solar cell assembly can receive light from both sides via the absorber layers of both of the top solar cell unit and the bottom solar cell unit. The solar cell assembly has an increased output efficiency and a greater power density and the cost of the manufacturing is therefore reduced. | 01-13-2011 |
| 20090272432 | SOLAR CELL - A solar cell includes a first electrode, a second electrode and a stacked semiconductor layer. The stacked semiconductor layer is disposed between the first electrode and the second electrode. The stacked semiconductor layer includes a first semiconductor layer, a second semiconductor layer and an intrinsic semiconductor layer. The first semiconductor layer has a first energy gap. The second semiconductor layer has a second energy gap. The intrinsic semiconductor layer is disposed between the first semiconductor layer and the second semiconductor layer, wherein the intrinsic semiconductor layer is a chalcopyrite layer and has a third energy gap. The third energy gap is less than the first energy gap and the second energy gap. | 11-05-2009 |
