NEC Corporaton Patent applications |
Patent application number | Title | Published |
20100188997 | THROUGHPUT ESTIMATION METHOD AND SYSTEM - In a throughput estimation method for estimating throughput of a first channel in a cellular system in which the first channel and a second channel that are used for an uplink wireless communication service in a cell, noise rise of the second channel is calculated from the traffic volume of the second channel, the noise rise and a target RTWP that is the target total reception power of the base station that is set in the base station are used to calculate a ratio of resources used for the wireless communication service that can be allocated to the first channel, and the resource ratio is then used to calculate the throughput of the first channel. | 07-29-2010 |
20100131760 | CONTENT USING SYSTEM AND CONTENT USING METHOD - For an audio-visual terminal that reproduces content, anonymity of a user is ensured while enabling reproduction of the content. A content using system of the present invention includes a communication terminal, an audio-visual terminal and a license server. The communication terminal generates an electronic ticket by providing a group sign to license information obtained from the license server. The audio-visual terminal, after verifying the group sign of the electronic ticket obtained from the communication terminal, transmits the electronic ticket to the license server. The license server judges whether or not the electronic ticket is usable, which is transmitted from the audio-visual terminal and assigns a license of the content to the audio-visual terminal when the electronic ticket is judged to be usable. The audio-visual terminal decrypts the content which is encrypted, by using a decryption key obtained based on the license, and reproduces the content. | 05-27-2010 |
20090250771 | Mosfet and production method of semiconductor device - To provide a MOSFET which is increased in substrate bias effect γ without increasing parasitic capacitance and junction leak current, the MOSFET includes: a gate electrode ( | 10-08-2009 |