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National University of Singapore (NUS)
Singapore, SG
| National University of Singapore (NUS) Patent applications | ||
| Patent application number | Title | Published |
|---|---|---|
| 20090050982 | Method for Modulating the Effective Work Function - A new MOSFET device is described comprising a metal gate electrode, a gate dielectric and an interfacial layer. The interfacial layer comprises a lanthanum hafnium oxide material for modulating the effective work function of the metal gate. The gate dielectric material in contact with the interfacial layer is different that the interfacial layer material. A method for its manufacture is also provided and its applications. | 02-26-2009 |