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National Instituteof Advanced Industrial Science and Technology
| National Instituteof Advanced Industrial Science and Technology Patent applications | ||
| Patent application number | Title | Published |
|---|---|---|
| 20110001166 | PHOTO-FIELD EFFECT TRANSISTOR AND ITS PRODUCTION METHOD - This invention provides a photo-FET, in which a FET part and photodiode part are stacked, and the FET part and photodiode part are optimized independently in design and operational bias conditions. The semiconductor layer serving as a photo-absorption layer ( | 01-06-2011 |