National Institute of Adv. Industrial Sci. & Tech. Patent applications |
Patent application number | Title | Published |
20110224417 | NOVEL MIXTURES FOR ASSAYING NUCLEIC ACID, NOVEL METHOD OF ASSAYING NUCLEIC ACID WITH THE USE OF THE SAME AND NUCLEIC ACID PROBE TO BE USED THEREFORE - [Problems] To provide a novel mixture for assaying a target nucleic acid, characterized by enabling a nucleic acid assay while: 1) requiring no step of diluting the target nucleic acid; 2) requiring no procedure of changing a probe concentration depending on a concentration of the target nucleic acid. | 09-15-2011 |
20100015719 | NOVEL MIXTURES FOR ASSAYING NUCLEIC ACID, NOVEL METHOD OF ASSAYING NUCLEIC ACID WITH THE USE OF THE SAME AND NUCLEIC ACID PROBE TO BE USED THEREFOR - [Problems] To provide a novel mixture for assaying a target nucleic acid, characterized by enabling a nucleic acid assay while: 1) requiring no step of diluting the target nucleic acid; 2) requiring no procedure of changing a probe concentration depending on a concentration of the target nucleic acid. | 01-21-2010 |
20090173949 | SILICON CARBIDE MOS FIELD EFFECT TRANSISTOR WITH BUILT-IN SCHOTTKY DIODE AND METHOD FOR MANUFACTURING SUCH TRANSISTOR - This invention has a cell incorporating a built-in Schottky diode region disposed in at least part of an elementary cell that constitutes an SiC vertical MOSFET provided in a low-density p-type deposit film with a channel region and a base region inverted to an n-type by ion implantation. This built-in Schottky diode region has built therein a Schottky diode of low on-resistance that is formed of a second deficient pan disposed in a high-density gate layer, a second n-type base layer penetrating a low-density p-type deposit layer formed thereon, reaching an n-type drift layer of the second deficient part and attaining its own formation in consequence of inversion of the p-type deposit layer into an n-type by the ion implantation of an n-type impurity from the surface, and a source electrode connected in the manner of forming a Schottky barrier to the surface-exposed part of the second n-type base layer. | 07-09-2009 |
20090057686 | SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONVERTER, DRIVE INVERTER, GENERAL-PURPOSE INVERTER AND SUPER-POWER HIGH-FREQUENCY COMMUNICATION EQUIPMENT USING THE SEMICONDUCTOR DEVICE - In a semiconductor device that uses a silicon carbide semiconductor substrate having p type, n type impurity semiconductor regions formed by ion implantation, the electrical characteristics of the end semiconductor device can be improved by decreasing the roughness of the silicon carbide semiconductor substrate surface. The semiconductor device of this invention is a Schottky barrier diode or a p-n type diode comprising at least one of a p type semiconductor region and n type semiconductor region selectively formed in a silicon carbide semiconductor region having an outermost surface layer surface that is a (000-1) surface or a surface inclined at an angle to the (000-1) surface, and a metal electrode formed on the outermost surface layer surface, that controls a direction in which electric current flows in a direction perpendicular to the outermost surface layer surface from application of a voltage to the metal electrode. | 03-05-2009 |